Description

Abstract
The development of computer aided design tools for devices and circuits has increased the interest for
accurate transistor modeling in microwave applications. In the increasingly expanding wireless
communication market, there is a huge demand for high performance RF power devices. The silicon
LD- MOSFET transistor is due to its high power performance is today widely used in systems such as
mobile base stations, private branch exchanges (PBX), and local area networks (LAN) utilizing the
bands between 0.9 to 2.5 GHz. In this research we simulated LD-MOSFET transistor characteristics of
the structure provided by Infineon technology at Kista, Stockholm. The maximum drain current
obtained in the simulation was 400 mA at a gate voltage of 8 V. This value is somewhat higher than the
measured one. This difference can be attributed to the parasitic effects since no parasitic effects were
included in the simulations in the beginning. The only parasitic effect studied was by placing the source
contact at the bottom of the substrate according to real commercial device. The matching between
simulated and measured results were improved and maximum drain current was reduced to 300
mA/mm which was 30% higher than the measured drain current The large signal RF simulations were
performed in time-domain in our novel technique developed at LiU. This technique utilizes a very
simple amplifier circuit without any passive components. Only DC bias and RF signals are applied to
the gate and drain terminals, with the same fundamental frequency but with 180o phase difference. The
RF signal at the drain acting as a short at higher harmonics. These signals thus also acted as an active
match to the transistor. Large signal RF simulations were performed at 1, 2 and 3 GHz respectively. The
maximum of drain current signal was observed at the maximum of drain voltage signal indicating the
normal behavior of the transistor. At 1 GHz the output power was 1.25 W/mm with 63% of drain
efficiency and 23.7 dB of gain. The out pout power was decreased to 1.15 W/mm and 1.1 W/mm at 2
and 3 GHz respectively at the same time the efficiency and gain was also decreased to 57% and 19 dB at
2 GHz and 51% and 15 dB at 3GHz respectively.