Philips Semiconductors Product specification
Triacs BT136 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedtriacsinaplastic
SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope,intendedforuseinapplicationsrequiringhigh
BT136- 500 600 800
bidirectionaltransientandblocking
BT136- 500F 600F 800F
voltagecapabilityandhighthermal
BT136- 500G 600G 800G
cyclingperformance.TypicalV
DRM
Repetitive peak off-state500600800Vapplicationsincludemotorcontrol,voltagesindustrialanddomesticlighting,I
T(RMS)
RMS on-state current444Aheatingandstaticswitching.I
TSM
Non-repetitive peak on-state252525Acurrent
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1main terminal 12main terminal 23gatetabmain terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT-500 -600 -800
V
DRM
Repetitive peak off-state-500
1
600
1
800VvoltagesI
T(RMS)
RMS on-state currentfull sine wave; T
mb
≤
107 ˚C-4AI
TSM
Non-repetitive peakfull sine wave; T
j
= 25 ˚C prior toon-state currentsurget = 20 ms-25At = 16.7 ms-27AI
2
tI
2
t for fusingt = 10 ms-3.1A
2
sdI
T
/dtRepetitive rate of rise ofI
TM
= 6 A; I
G
= 0.2 A;on-state current afterdI
G
/dt = 0.2 A/
µ
striggeringT2+ G+-50A/
µ
sT2+ G--50A/
µ
sT2- G--50A/
µ
sT2- G+-10A/
µ
sI
GM
Peak gate current-2AV
GM
Peak gate voltage-5VP
GM
Peak gate power-5WP
G(AV)
Average gate powerover any 20 ms period-0.5WT
stg
Storage temperature-40150˚CT
j
Operating junction-125˚Ctemperature
T1T2G
123tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 3 A/
µ
s.August 19971Rev 1.200
Philips SemiconductorsProduct specification
TriacsBT136 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistancefull cycle--3.0K/W junction to mounting basehalf cycle--3.7K/WR
th j-a
Thermal resistancein free air-60-K/W junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITBT136- ... ...F ...G
I
GT
Gate trigger currentV
D
= 12 V; I
T
= 0.1 AT2+ G+-5352550mAT2+ G--8352550mAT2- G--11352550mAT2- G+-307070100mAI
L
Latching currentV
D
= 12 V; I
GT
= 0.1 AT2+ G+-7202030mAT2+ G--16303045mAT2- G--5202030mAT2- G+-7303045mAI
H
Holding currentV
D
= 12 V; I
GT
= 0.1 A-5151530mAV
T
On-state voltageI
T
= 5 A-1.41.70VV
GT
Gate trigger voltageV
D
= 12 V; I
T
= 0.1 A-0.71.5VV
D
= 400 V; I
T
= 0.1 A;0.250.4-VT
j
= 125 ˚CI
D
Off-state leakage currentV
D
= V
DRM(max)
;-0.10.5mAT
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITBT136- ... ...F ...G
dV
D
/dtCritical rate of rise ofV
DM
= 67% V
DRM(max)
;10050200250-V/
µ
soff-state voltageT
j
= 125 ˚C; exponentialwaveform; gate opencircuitdV
com
/dtCritical rate of change ofV
DM
= 400 V; T
j
= 95 ˚C;--1050-V/
µ
scommutating voltageI
T(RMS)
= 4 A;dI
com
/dt = 1.8 A/ms; gateopen circuitt
gt
Gate controlled turn-onI
TM
= 6 A; V
D
= V
DRM(max)
;---2-
µ
stimeI
G
= 0.1 A; dI
G
/dt = 5 A/
µ
sAugust 19972Rev 1.200
Philips SemiconductorsProduct specification
TriacsBT136 series
Fig.1. Maximum on-state dissipation, P
tot
, versus rms on-state current, I
T(RMS)
, where
α
= conduction angle.Fig.2. Maximum permissible non-repetitive peak on-state current I
TSM
, versus pulse width t
p
, for sinusoidal currents, t
p
≤
20ms.Fig.3. Maximum permissible non-repetitive peak on-state current I
TSM
, versus number of cycles, for sinusoidal currents, f = 50 Hz.Fig.4. Maximum permissible rms current I
T(RMS)
,versus mounting base temperature T
mb
.Fig.5. Maximum permissible repetitive rms on-state current I
T(RMS)
, versus surge duration, for sinusoidal currents, f = 50 Hz; T
mb
≤
107˚C.Fig.6. Normalised gate trigger voltage V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
012345012345678= 180120906030BT136IT(RMS) / APtot / WTmb(max) / C125122119116113110107104101
1
-50050100150012345BT136Tmb / CIT(RMS) / A107 C
10us100us1ms10ms100ms101001000BT136T / sITSM / A
TITSMtimeITj initial = 25 C maxT
dI /dt limit
T
T2- G+ quadrant0.010.1110024681012BT136surge duration / sIT(RMS) / A
1101001000051015202530BT136Number of cycles at 50HzITSM / A
TITSMtimeITj initial = 25 C maxT
-500501001500.40.60.811.21.41.6BT136Tj / CVGT(Tj)VGT(25 C)
August 19973Rev 1.200
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