Avalanche Photodiode (APD)

Attributes: high speed and internal gain

Good for communications
A thin side layer is exposed through a window to achieve
illumination.
3 p type layers follow this and terminate at the electrode.
These p-type layers have different doping levels in order to modify the
field distribution across the diode.
1
st
p-type region is a thin layer
2
nd
p-type region is a thick, lightly dope layer. (almost intrinsic)
3
rd
p-type region is heavily doped layer.
+
n
t
+
p
APD
The diode operates in the reverse bias mode in order to
increase the field in the depletion regions.
Applying an adequate R.B. will force the depletion region
in the p-layer to reach-through to layer.
The field ultimately extends from -side depletion layer
to the - side depletion layer.
Absorption of photons and therefore photogeneration takes
place in the long layer.
It is a uniform field in the layer due to the small net
space charge density.
t
+
n
+
p
t
t
APD
The E-field is at a maximum at the - side and a
minimum at the - side.
Drifting electrons arriving at the p-layer experience
elevated fields and acquire enough kinetic energy (greater
than Eg) to impact-ionize some of the Si covalent bonds
and release EHPs.
These EHPs can be accelerated by high fields to high
kinetic energies to cause further impact ionization
releasing even more EHPs leading to an avalanche of
impact-ionization process.
+
n
+
p
+
p
APD
In summary a single elctron entering the p-layer can
generate a large number of EHPs which contribute to an
observed photocurrent.
APDs have an internal gain mechanism.
This avalanche multiplication corresponds to a quantum
efficiency greater than unity.
Why is photogeneration restricted to the region ?
Electrons as a carrier in Si have a higher impact ionization
efficiency than holes (less excess noise in avalanche
multiplied photocurrent).

t
APD
Factors determining speed:
1. Time it takes for photogenerated electron to cross the
absorption region ( layer) to the multiplication layer (p
layer).
2. Time it takes for the avalanche process to build-up in the
p-region and generate EHPs.
3. Time it takes for the last hole released in the avalanche
process to vacate the region.

t
t
Avalanche Multiplication Factor
pho
ph
I
I
tocurrent tipliedpho primarymul
M = =
nt Photocurre Multiplied
ture. on tempera dependant index stic characteri a is
voltage breakdown avalanche is : where
1
1
n
V
V
V
M
br
n
br
r
|
|
.
|

\
|

=
APD
Response time of APD is longer than PIN diode however it
offers gain.
APD does not require additional amplification which
introduces delay to PIN diode.
Drawback of APD: The peripheral edge of the p
junction reaches avalanche breakdown before the p
window of illumination area.
Uniform avalanche multiplication is required to promote
avalanching of primary photocurrent versus dark current
(generates random EHPs). Remedy: guard ring.
+
n
+
n
p
+
SiO
2 Electrode

net
x
x
E(x)
R
E
hu > E
g
p
I
ph
e

h
+
Absorption
region
Avalanche
region
(a)
(b)
(c)
(a) A schematic illustration of the structure of an avalanche photodiode (APD) biased
for avalanche gain. (b) The net space charge density across the photodiode. (c) The
field across the diode and the identification of absorption and multiplication regions.
Electrode
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
n
+
h
+
E

n
+
p
e

Avalanche region
e

h
+
E
c
E
v
(a)
(b)
E
(a) A pictorial view of impact ionization processes releasing EHPs and
the resulting avalanche multiplication. (b) Impact of an energetic
conduction electron with crystal vibrations transfers the electron's
kinetic energy to a valence electron and thereby excites it to the
conduction band.
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
SiO
2
Guard ring
Electrode
Ant ireflection coat ing
n
n
n
+
p
+

p
Subst rate
Electrode
n
+
p
+

p
Subst rate
Electrode
Avalanche breakdown
(a) (b)
(a) A Si APD structure without a guard ring. (b) A schematic illustration of the
structure of a more practical Si APD
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
E
N n
Electrode
x
E(x)
R
hu
I
ph
Absorption
region
Avalanche
region
InP InGaAs
h
+
e

E
InP
P
+
n
+
Simplified schematic diagram of a separate absorption and multiplication
(SAM) APD using a heterostructure based on InGaAs-InP. P and N refer to
p and n -type wider-bandgap semiconductor.
V
r
V
out
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
InP
InGaAs
h
+
e

E
E
c
E
v
E
c
E
v
InP
InGaAs
E
v
E
v
InGaAsP grading layer
h
+
AE
v
(a) Energy band diagram for a
SAM heterojunction APD where
there is a valence band step AE
v
from InGaAs to InP that slows
hole entry into the InP layer.
(b) An interposing grading layer
(InGaAsP) with an intermediate
bandgap breaks AE
v
and makes it
easier for the hole to pass to the InP
layer
(a)
(b)
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
P
+
InP Substrate
P
+
InP (2-3 m) Buffer epitaxial layer
NInP (2-3 m) Multiplication layer.
Photon
nIn
0. 53
Ga
0. 47
As (5-10m) Absorption layer
Graded nInGaAsP (<1 m)
Electrode
Electrode
Simplified schematic diagram of a more practical mesa-etched SAGM layered
APD.
1999 S.O. Kasap, Optoelectronics (Prentice Hall)
hu
h
+
e

n
+
E
c
E
v
1020 nm
p
+
E
E
g1
E
g2
AE
c
Energy band diagram of a staircase superlattice APD (a) No bias. (b) With
an applied bias.
(a) (b)
1999 S.O. Kasap, Optoelectronics (Prentice Hall)