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Cmos Funda Full Course

Cmos Funda Full Course

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Published by Kumar Bsnsp

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Published by: Kumar Bsnsp on Jun 19, 2012
Copyright:Attribution Non-commercial

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07/19/2013

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CADENCE CONFIDENTIAL1 CADENCE DESIGN SYSTEMS, INC.
SESSION 1: MOS THEORY
 
Review of PN Junction
MOS Structure
Accumulation, cutoff, Inversion
MOS transistor
Threshold Voltage
 
CADENCE CONFIDENTIAL2
Review of PN Junction
Drift current: electrons and holes move in an electric field
(+)holesE fieldelectrons
Diffusion current: electrons and holes move from highconcentration to low concentration
Si Si Si Si
e-conc.
(-)
 
CADENCE CONFIDENTIAL3
Review (cont)
PN junction built-in potential
E
C
E
Fn
E
Fp
E
V
qV
0
 
Fermi levels line up
Electrons traveling fromright to left have to crosspotential barrier of qV
0
E field
NP
- V
0
+
    
2
ln
i D A
n N  N qk
q E  E 
inip
0

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