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SiC Epitaxial Layers with Low Basal Plane Dislocation Concentrations

SiC Epitaxial Layers with Low Basal Plane Dislocation Concentrations

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The Naval Research Laboratory (NRL) has developed a process for manufacturing silicon carbide epiwafers with low basal plane dislocation (BPD) concentration that saves time and resources on the production line by relying on epitaxial growth interrupts. The reduction of BPDs relies on the conversion of BPDs to threading edge dislocations (TEDs) at each growth interrupt and the use of multiple interrupts to achieve a desired overall BPD reduction. The interrupted/modified epitaxial growth technique relies on straight forward in situ growth process that may be easy to implement with commercial epitaxial growth systems.

NRL Technology Transfer Office
http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE09

Naval Research Laboratory website
http://www.nrl.navy.mil
The Naval Research Laboratory (NRL) has developed a process for manufacturing silicon carbide epiwafers with low basal plane dislocation (BPD) concentration that saves time and resources on the production line by relying on epitaxial growth interrupts. The reduction of BPDs relies on the conversion of BPDs to threading edge dislocations (TEDs) at each growth interrupt and the use of multiple interrupts to achieve a desired overall BPD reduction. The interrupted/modified epitaxial growth technique relies on straight forward in situ growth process that may be easy to implement with commercial epitaxial growth systems.

NRL Technology Transfer Office
http://www.nrl.navy.mil/techtransfer/fs.php?fs_id=ELE09

Naval Research Laboratory website
http://www.nrl.navy.mil

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Categories:Types, Research, Science
Published by: U.S. Naval Research Laboratory on Jul 13, 2012
Copyright:Attribution Non-commercial

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12/31/2013

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