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PD- 94423

IRF3000
SMPS MOSFET
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
l High frequency DC-DC converters 300V 0.40W@VGS = 10V 1.6A

Benefits
A
A
l Low Gate to Drain Charge to Reduce 1 8
S D
Switching Losses 2 7
S D
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See S 3 6
D

App. Note AN1001) G


4 5
D
l Fully Characterized Avalanche Voltage
and Current Top View SO-8

Absolute Maximum Ratings


Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.3 A
IDM Pulsed Drain Current  13
PD @TA = 25°C Power Dissipation„ 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt † 8.9 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient „ ––– 50 °C/W

Notes  through † are on page 8


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IRF3000
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.38 ––– V/°C Reference to 25°C, ID = 1mA ƒ
RDS(on) Static Drain-to-Source On-Resistance ––– 0.34 0.40 Ω VGS = 10V, ID = 0.96A ƒ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 300V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)


Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.0 ––– ––– S VDS = 50V, ID = 0.96A
Qg Total Gate Charge ––– 22 33 ID = 0.96A
Qgs Gate-to-Source Charge ––– 4.7 7.1 nC VDS = 240V
Qgd Gate-to-Drain ("Miller") Charge ––– 11 17 VGS = 10V,
td(on) Turn-On Delay Time ––– 8.2 ––– VDD = 150V
tr Rise Time ––– 7.2 ––– ns ID = 0.96A
td(off) Turn-Off Delay Time ––– 23 ––– RG = 2.2Ω
tf Fall Time ––– 23 ––– VGS = 10V ƒ
Ciss Input Capacitance ––– 730 ––– VGS = 0V
Coss Output Capacitance ––– 100 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 20 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 39 ––– VGS = 0V, VDS = 240V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 87 ––– VGS = 0V, VDS = 0V to 240V …

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 47 mJ
IAR Avalanche Current ––– 1.9 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 1.6
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 13
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 0.96A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 86 130 ns TJ = 25°C, IF = 0.96A
Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs ƒ
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IRF3000

100 100
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)


8.0V 8.0V
10 7.0V 7.0V
6.5V 6.5V
6.0V 6.0V
BOTTOM 5.5V 10
BOTTOM 5.5V

1
5.5V
5.5V
1
0.1

20µs PULSE WIDTH 20µs PULSE WIDTH


Tj = 25°C Tj = 150°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100.0 2.5
I D = 1.6A
ID, Drain-to-Source Current ( A)

2.0
RDS(on) , Drain-to-Source On Resistance

10.0 T J = 150°C
(Normalized)

1.5

1.0
1.0 T J = 25°C

0.5
VDS = 50V
20µs PULSE WIDTH
0.1 V GS = 10V
0.0
5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature
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IRF3000

100000 20
VGS = 0V, f = 1 MHZ
C iss = C gs + Cgd , C ds
ID= 0.96A

VGS , Gate-to-Source Voltage (V)


SHORTED VDS= 240V
10000 16
Crss = Cgd VDS= 150V
Coss = Cds + Cgd VDS= 60V
C, Capacitance (pF)

1000 12
Ciss

8
100
Coss

Crss
4
10
FOR TEST CIRCUIT
SEE FIGURE 14
0
1
0 5 10 15 20 25 30
1 10 100 1000
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

100.0 100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

10.0 10
TJ = 150°C

100µsec
1.0 1

1msec
Tc = 25°C
T J = 25°C
Tj = 150°C
VGS = 0V Single Pulse 10msec
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 10000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
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IRF3000

2.0
RD
VDS

1.6 VGS
D.U.T.
RG
+
-V DD
I D , Drain Current (A)

1.2

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.8

Fig 10a. Switching Time Test Circuit


0.4
VDS
90%
0.0
25 50 75 100 125 150
TC , Case Temperature ( °C)

10%
Fig 9. Maximum Drain Current Vs.
VGS
Ambient Temperature
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50
(Z thJA)

10 0.20

0.10

0.05

0.02
Thermal Response

1
0.01
P DM

SINGLE PULSE
t1
(THERMAL RESPONSE)
0.1
t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJA +T A
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF3000

RDS(on) , Drain-to -Source On Resistance ( Ω)


0.50
RDS (on) , Drain-to-Source On Resistance ( Ω)

0.80

0.70
0.46

0.60

0.42
VGS = 10V 0.50

ID = 0.96A
0.38
0.40

0.34 0.30
0 2 4 6 8 10 12 14 6 8 10 12 14 16

ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD
+
V
100
D.U.T. - DS ID
VG
VGS TOP 0.9A
3mA Charge 1.5A
80 BOTTOM 1.9A
IG ID
EAS , Single Pulse Avalanche Energy (mJ)

Current Sampling Resistors

60
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
40

15V

20
V(BR)DSS
tp L DRIVER
VDS

RG D.U.T +
V 0
- DD
IAS A 25 50 75 100 125 150
20V
tp 0.01Ω Starting T , Junction
J Temperature ( °C)
I AS

Fig 15a&b. Unclamped Inductive Test circuit Fig 15c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
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IRF3000
SO-8 Package Details
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BAS IC 1.27 BASIC
e1 .025 BAS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOTES:
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBS TRATE.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking


EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
YWW
XXXX
INTERNAT IONAL F7101 LOT CODE
RECTIFIER
LOGO PART NUMBER

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IRF3000

SO-8 Tape and Reel


TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:
 Repetitive rating; pulse width limited by „ When mounted on 1 inch square copper board
max. junction temperature. … Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 26mH as Coss while VDS is rising from 0 to 80% VDSS
R G = 25Ω, IAS = 1.9A. † ISD ≤ 0.96A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. T J ≤ 150°C

Data and specifications subject to change without notice.


This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/02
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