Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET

Bhavana Jharia*, S. Sarkar and R. P. Agarwal, Sr. Member IEEE Department of Electronics and Computer Engineering Indian Institute of Technology Roorkee, Roorkee –247667(INDIA) {bhanudec, fermifec, rajanfec@iitr.ernet.in}

ABSTRACT
In this paper, the effect of impact ionization on the subthreshold operation of a single-gate submicron MOSFET is studied ,as the subthreshold current is of great importance for low-power design.when the device is scaled down to submicron level,the high electric field in the submicron channel has been found to be responsible for impact ionization. In linear and saturation region, the ionization rate in the high-field region near the drain are gate-length and oxide thickness dependent.The effect of impact ionization on Subthreshold current has been overlooked until recently.The double-gate MOSFETs are generally used for deep submicron technology, the conventional (single gate) MOSFETs find application over a wide range of gate-length.Fjeldly et al. model for submicron devices takes into consideration the short channel effect and subthreshold current.However, the effect of impact ionization was ignored. The model of Fjeldly et al. is improved by including the effect of impact ionization.If M is the current multiplication factor due to impact ionization in channel of a MOSFET, then the drain current I DS is multiplied by M.The increase in M with VGS shows that contribution from impact ionization is increased, if gate voltage increase.If oxide thickness is thinned,impact ionization increases due to increase in Em ,but small oxide thickness results in higher subthreshold current.So by choosing the proper value we may control the subthreshold current.These controls of drain, gate voltages and gate oxide thickness are through bias dependence of the maximum of longitudinal field.

Nirneya gupta 2012H123046G