2N2218-2N2219 2N2221-2N2222

HIGH-SPEED SWITCHES
DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request.
TO-39

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and at T c as e ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and Storage Temperature Junction Temperature 2 N22 19 2 N22 22 2 N22 19 2 N22 22 Value 60 30 5 0.8 0.8 0.5 3 1.8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/5

T st g Tj January 1989

cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 °C/W 187.6 1. Typ. 10 10 10 Unit nA µA nA V V V 60 30 5 0.3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Colllector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 50 V V CB = 50 V VE B = 3 V I C = 10 µA I C = 10 mA I E = 10 µA I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA T am b = 150 °C Min. duty cycle = 1 %.6 20 25 35 40 20 20 35 50 75 100 30 50 250 8 60 V (BR)CE O * V ( BR) V CE VB E EBO (s at )* V V V V (s at )* h F E* for 2N 221 8 and 2N 22 21 I C = 0. 2/5 . Max.5 °C/W 2N 222 1 2N 222 2 83.3 2.2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2 N22 18 2 N22 19 R t h j.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 20 mA f = 100 MHz IE = 0 f = 100 kHz I C = 20 mA f = 300 MHz V CE = 20 V V CB = 10 V V CE = 20 V 120 300 fT C CBO R e (h ie ) Transition Frequency Collector-base Capacitance Real Part of Input Impedance MHz pF Ω * Pulsed : pulse duration = 300 µs.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V for 2N 221 9 and 2N 22 22 I C = 0.4 1.

16 45o TYP.100 0.045 MAX.019 0.8 0. 0. MIN. A B D E F G H I L 45o 2.9 5.54 1. 12. MIN.2N2218-2N2219-2N2221-2N2222 TO-18 MECHANICAL DATA mm DIM.208 0. TYP.047 0. inch D G I H E F A L C B 0016043 3/5 .193 0.2 1.49 5.3 4.228 MAX.7 0.500 0.

MIN. 0. MAX.6 8.7 0.370 TYP.5 9.047 0.2N2218-2N2219-2N2221-2N2222 TO39 MECHANICAL DATA mm DIM.500 0.4 0.200 0.49 6.260 0.) 12.035 TYP. MIN.334 0. inch D G I H E F A L B P008B 4/5 .9 45o (typ. A B D E F G H I L 5.2 0. MAX.019 0.08 1.

Switzerland .Brazil . This publication supersedes and replaces all information previously supplied.Sweden .Germany . No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics .Japan .Malta .Taiwan .Hong Kong .The Netherlands Singapore . Specifications mentioned in this publication are subject to change without notice.Italy .Morocco .A 5/5 .S.Malaysia .All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia . SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.2N2218-2N2219-2N2221-2N2222 Information furnished is believed to be accurate and reliable.Thailand .Korea .United Kingdom .U.France .Spain . However. SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.

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