6MBI75S-120

IGBT MODULE ( S series) 1200V / 75A 6 in one-package

Features
Compact package P.C.board mount Low VCE(sat)

IGBT Modules

Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Industrial machines, such as welding machines

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES V GES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 100 75 200 150 75 150 520 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V Nm

Equivalent Circuit Schematic

21(P) 13(P)

1(Gu)

5(Gv)

9(Gw)

2(Eu) 19(U)

6(Ev) 17(V)

10(Ew) 15(W)

3(Gx)

7(Gy)

11(Gz)

4(Ex) 20(N)

8(Ey)

12(Ez) 14(N)

*1 : Recommendable value : 2.5 to 3.5 Nm (M5)

Electrical characteristics (Tj=25C unless otherwise specified)

Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 9000 1875 1650 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=75mA Tj=25C VGE=15V, IC=75A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=75A VGE=15V RG=16 Tj=25C Tj=125C IF=75A IF=75A, VGE=0V Unit mA A V V pF

Turn-off time Diode forward on voltage Reverse recovery time

V s

Thermal resistance characteristics

Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.24 0.50 IGBT FWD the base to cooling fin C/W C/W C/W Unit

Thermal resistance

*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound

6MBI75S-120
Characteristics
Collector current vs. Collector-Emitter voltage
200

IGBT Modules

Collector current vs. Collector-Emitter voltage

200

Tj= 25 C (typ.)

Tj= 125 C (typ.)

VGE= 20V 150 Collector current : Ic [ A ]

15V

12V 150 Collector current : Ic [ A ]

VGE= 20V

15V

12V

100 10V

100

10V

50

50

8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

200

Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage

10

Tj= 25 C (typ.)

Tj= 25 C 150 Collector current : Ic [ A ]

Tj= 125 C Collector - Emitter voltage : VCE [ V ]

100

4 Ic= 150A 2 Ic= 75A Ic= 37.5A

50

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C

20000 1000
o

Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25 C

25
o

10000 Cies Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Gate - Emitter voltage : VGE [ V ]

600

15

1000 Coes Cres

400

10

200

100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]

0 0 200 400 Gate charge : Qg [ nC ] 600

0 800

6MBI75S-120

IGBT Modules

Switching time vs. Collector current (typ.)

Switching time vs. Collector current (typ.)

Vcc=600V,VGE=15V, Rg=16,Tj=25oC
1000 1000

Vcc=600V,VGE=15V, Rg=16,Tj=125oC

toff 500 Switching time : ton, tr, toff, tf [ nsec ] toff ton tr Switching time : ton, tr, toff, tf [ nsec ] 500

ton tr

tf 100

100 tf

50 0 50 100 150 Collector current : Ic [ A ]

50 0 50 100 150 Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.)

Switching loss vs. Collector current (typ.)

Vcc=600V,Ic=75A,VGE=15V,Tj=25oC
5000 20

Vcc=600V,VGE=15V, Rg=16,Tj=125oC

ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15

Eon(125 C)

1000

Eon(25 C) 10 Eoff(125 C)
o

500

Eoff(25 C) 5 Err(125 C)
o

100

tf Err(25 C)
o

50 5 10 50 100 500 Gate resistance : Rg [ ]

0 0 50 100 150 Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.)

Reverse bias safe operating area

o +VGE=15V,-VGE< C = ,Tj<125 = =15V, Rg>16

Vcc=600V,Ic=75A,VGE=15V ,Tj=125oC
50 Eon 200

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

40 150 Collector current : Ic [ A ] Eoff 10 Err 0 5 10 50 100 500 Gate resistance : Rg [ ] 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]

30

100

20

50

6MBI75S-120

IGBT Modules

Forward current vs. Forward on voltage (typ.)

200 300

Reverse recovery characteristics (typ.)

Vcc=600V,VGE=15V, Rg=16 ,Tj=125oC

trr(125 C) Tj=125 C 150 Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 100 trr(25 C) Irr(125 C) Irr(25 C)
o o o o

Tj=25 C

100

50

0 0 1 2 Forward on voltage : VF [ V ] 3 4

10 0 50 100 150 Forward current : IF [ A ]

Transient thermal resistance

1

FWD

Thermal resistanse : Rth(j-c) [ C/W ]

IGBT

0.1

M626

0.01 0.001

0.01

0.1

Pulse width : Pw [ sec ]

Outline Drawings, mm
1221 8-R2.250.3 4-5.50.3 13.09 19.05
19

1100.3 94.50.3 19.05

18

19.05
17

19.05
16 15

11.5

+0.5 0

19.05 11.67

39.90.3

3.81 3.81

11.5

+0.5 0

20

14

57.50.3

500.3

58.42

2.50.1 1.5 2.10.1 Section A-A 0.4 Shows theory dimensions 0.80.2 6

621

99.60.3 3.81

21

11

12

4.06 3.50.5 1.50.3

15

15.24 15.24 15.24 15.24 15.24 118.11

13

1.150.2

20.51

2.50.3

171

6.50.5

10.2