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Molecular Beam Epitaxy:


1. Liquid Phase Epitaxy 2. Vapour Phase Epitaxy(for Silicon) 3. Molecular Beam Epitaxy
The dierence of MBE from other epitaxial methods is that it is simply a physical evaporation process .There is no chemical

Epitaxy is of 3 types

process involved in it.

Advantages of MBE compared to other epitaxial process:

1. Low temperature process so intermixing is minimized so less possibility of autodoping 2. Precise control of doping 3. Growth can also be precisely controlled 4. We can grow very thin layer by precise control 5. There is no boundary layer problem
Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals MBE is done under UltraHigh Vacuum conditions(108 to 1010 torr).Inorder to achieve UHV we have to evaporate the corre-

sponding species.Silicon is of hih melting point .So simple thermal heating cant evaporate the silicon.So we can evaporate using electron gun

Most of now MBE systems are multichambered systems Inorder to nd the composition we usually incorporate XPS ino MBE.

1.1 Explanation of gure:

1. 2 pumps: Because that UHV is impossible by using single pump.Because of its oil Vapour MBE do not use diffusion
cell

2. Si Source:It is placed near the e- gun.So that e- will evaporate the silicon into the conical shape 3. Eusion cell: To introduce the dopants into the substrate at relatively lower temperature.The dopants come out
through small opening in the effusion cell

4. Thermocouple:To measure the substrate temperature. 5. Mass Spectrometer: To monitor the gas composition 6. Ion Gauge:Instead of effusion cell.So that much more control over MBE system 7. RHEED(Reection High Energy Electron Diraction):To access the crystal quality of epitaxial layer as it is growing

1.2 Certain other terms:


1.2.1 Insitu cleaning:

Baking at high temp 1000-12000 c in vacuum


1.2.2 Sputter Clean:

Using Argon beam . Then Anneal at 800-9000 c inorder to clean the damages