Si6911DQ

New Product Vishay Siliconix

Dual P-Channel 12-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFETS
VDS (V) rDS(on) (W) ID (A) APPLICATIONS
0.026 @ VGS = -4.5 V -5.1 D Load Switch
D Battery Switch
-12 0.035 @ VGS = -2.5 V -4.5

0.046 @ VGS = -1.8 V -3.9

S1 S2

TSSOP-8

D1 1 8 D2 G1 G2
D
S1 2 7 S2
S1 3 6 S2
G1 4 5 G2

Top View

D1 D2
Ordering Information: Si6911DQ T-1

P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -12
V
Gate-Source Voltage VGS "8
TA = 25_C -5.1 -4.3
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C -4.1 -3.5
A
Pulsed Drain Current (10 ms Pulse Width) IDM -30
Continuous Source Current (Diode Conduction)a IS -1.0 -0.7
TA = 25_C 1.14 0.83
Maximum Power Dissipationa PD W
TA = 70_C 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 86 110
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 124 150 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 59 75

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72231 www.vishay.com

S-31064—Rev. A, 26-May-03 1
Si6911DQ
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -300 mA -0.4 -0.9 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA

VDS = -9.6 V, VGS = 0 V -1

Zero Gate Voltage Drain Current IDSS mA
VDS = -9.6 V, VGS = 0 V, TJ = 70_C -25
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -5.1 A 0.021 0.026
W
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -4.5 A 0.028 0.035

VGS = -1.8 V, ID = -3.9 A 0.037 0.046 W

Forward Transconductancea gfs VDS = -5 V, ID = -5.1 A 20 S

Diode Forward Voltagea VSD IS = -1.0 A, VGS = 0 V -0.65 -1.1 V

Dynamicb
Total Gate Charge Qg 16 24
Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -5.1 A 1.9 nC
Gate-Drain Charge Qgd 3.9
Turn-On Delay Time td(on) 35 55
Rise Time tr 62 100
VDD = -6 V, RL = 6 W
Turn-Off Delay Time td(off) ID ^ -1 A, VGEN = -4.5 V, RG = 6 W 120 180 ns
Fall Time tf 70 110
Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 A/ms 65 100

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

30 30
VGS = 5 thru 2.5 V TC = -55_C

25_C
24 24
2V
I D - Drain Current (A)

I D - Drain Current (A)

125_C
18 18

12 12

6 1.5 V 6

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72231

2 S-31064—Rev. A, 26-May-03
 Si6911DQ
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance

0.10 2500
r DS(on) - On-Resistance ( W )

0.08 2000

C - Capacitance (pF)
Ciss

0.06 1500
VGS = 1.8 V

0.04 VGS = 2.5 V 1000

Coss

0.02 500
VGS = 4.5 V Crss

0.00 0
0 6 12 18 24 30 0 2 4 6 8 10 12

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

6 1.6
VDS = 6 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)

ID = 5.1 A ID = 5.1 A
5
r DS(on) - On-Resistance ( W)

1.4
(Normalized)

4
1.2

1.0
2

0.8
1

0 0.6
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

40 0.10

TJ = 150_C
0.08
r DS(on) - On-Resistance ( W )

10
I S - Source Current (A)

0.06 ID = 5.1 A

TJ = 25_C
1 0.04

0.02

0.2 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Document Number: 72231 www.vishay.com

S-31064—Rev. A, 26-May-03 3
Si6911DQ
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 200

0.3 160
V GS(th) Variance (V)

0.2 ID = 300 mA

Power (W)
120

0.1
80
0.0

40
-0.1

-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)

Safe Operating Area, Junction-to-Case

100

Limited
by rDS(on) 1 ms
10
I D - Drain Current (A)

10 ms
1

100 ms

TC = 25_C
0.1 1s
Single Pulse
10 s
dc

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 124_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72231

4 S-31064—Rev. A, 26-May-03
 Si6911DQ
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10
Square Wave Pulse Duration (sec)

Document Number: 72231 www.vishay.com

S-31064—Rev. A, 26-May-03 5