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Models for Integrated-circuit Active Devices • Depletion of a pn junction: .I.It depends on the properties of reversebiased pn junctions which has important influence on the characteristics of the IC components. - .


Effect of Applied Voltage • The quasi-neutral N-type and P-type regions have low resistivity. (Think of a voltage divider circuit. • If VD > 0 (forward bias). when an external voltage VD is applied across the diode. whereas the depletion region has high resistivity. D + ID . almost all of this voltage is dropped across the depletion region. the potential barrier to carrier diffusion is increased by the applied voltage. – Thus.) • If VD < 0 (reverse bias). the potential barrier to carrier diffusion is reduced by the–V applied voltage.