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B.E. /B. Tech. DEGREE EXAMINATION, MAY/JUNE 2012. Second Semester Common to ECE, CSE, IT and Bio Medical Engineering, and Medical Electronics branches EC 2151/147201/EC 25/10144 EC 205/080290007/EE 1152 – ELECTRIC CIRCUITS AND ELECTRON DEVICES

(Regulation 2008) Time : Three hours Answer ALL questions. PART A – (10 x 2 = 20 marks) Maximum : 100 marks

1. 2. 3. 4. 5. 6. 7. 8. 9. 10.

Write the voltage division rule, for the two different resistors connected in series to a voltage source. State maximum power transfer theorem. A 2kΩ resistor in series with a 0.1 μ F capacitor is given an input of 10 V rms sine wave signal at 500 Hz. Determine the total impedance. Write the expression for the resonant frequency of a RLC series circuit. What is meant by PIV (Peak Inverse Voltage) of a Pn Junction diode? What is meant by zener effect? Define and explain the term ‘early effect’. Differentiate between enhancement – type and depletion – type MOSFETs. What is tunneling phenomenon? Name two applications of photoconductive cells.

ASK

PART B – (5 x 16 = 80 marks)

11.

(a)

(i)

For the circuit shown below Fig. Q 11(a) (i), calculate the current through the G Ω resistor, using loop analysis. (8)

(ii)

Calculate the effective resistance between points A and B in the circuit shown below Fig. Q. 11 (a) (ii). (8)

(b)

(i)

Find the value of R1. For transfer of maximum power from source to load, for the circuit shown below Fig. Q 11 (a) (i). find also corresponding maximum power. (6)

(ii)

ASK

For the resistive network shown below Fig. Q. 11 (b) (ii), find the current

in each resistor using the superposition principle.

(10)

12

(a)

In the RL, circuit shown below Fig. Q. 12 (a), the output is taken across the inductor. (16)

A pulse input voltage with a pulse width of tp is applied. Derive the response of the circuit and sketch the output curve. Or (b) Drive expressions for impedance, phase angle, voltages and current in a series RLC resonant circuit. Show their variations graphically with respect to frequency. State how will you find the maximum voltages across L and across C. (16) 13. (a) (i) With the help of energy band diagram of PN junction diode, drive the expression for the contact difference of potential. (6) Consider a germanium PN junction at 00 K with doping concentration NA 1. x 10² cm and D 2 x 10 cm in the p and n sides of the junction respectively. Assuming the intrinsic carrier concentration of germanium n 2. x 10 cm at 00º K, determine the contact potential across the junction. (12)

(ii)

(iii) The resistivities of the two sides of an abrupt germanium diode are 2Ω cm (p side) and 1Ω cm (n side) at 300ºK. The mobility of electrons and holes in germanium are μn = 3800 cm² / V sec and μp = 1800cm²/V sec respectively. Calculate the height E0 of the potential – energy barrier. Or

ASK

(b) What is meant by diffusion Capacitance of a PN junction diode? Derive an expression for the Diffusion Capacitance in terms of the current and the mean life time for holes. (16) 14. (a) (i) (ii) What is meant by “Transistor”? Explain the terms ‘Emitter’ ‘Collector’ and ‘Base’. (6) Explain the working of (1) NPN transistor (2) PNP transistor. (10) (4)

(iii) Sketch the symbols of transistor and mark the current directions. Or

(b)

(i)

Sketch and explain the construction of P – channel JFET. Give also its symbol. (4) Make a comparison of N – channel JFET and P – Channel JFET. Sketch the basic circuits for both (8) Sketch and explain the drain – characteristics and transfer – characteristics of P – channel JFET. (8) Explain the construction, operation and characteristics of UJT. (8)

(ii)

(ii)

15

(a)

(i) (ii)

Sketch the symbol of DIAC and explain its operation and characteristics. Or

15

(b)

(i)

Explain the construction, symbol and characteristics of (i) Dynamic Scattering LCD.

(4)

(ii)

(ii) Field Effect LCD. (8) What is the basic property of a Photoconductive cell? With the help of sketches, explain its construction, symbol and operation. (8)

ASK

ASK

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