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PN JUNCTION DIODE CHARACTERISTICS

AIM

: To obtain the V-I characteristics of PN junction diode (both Ge and Si ) in forward & reverse bias conditions and also determine the cutin Voltage, forward & reverse resistances.

APPARATUS :

S.No. 1. 2. 3. 4. 5.

Name of the Apparatus IN4007 & DR25 Power Supply Ammeter Voltmeter Resistor

Range 0-30V 0-50mA 0-5V 470

Quantity Each 1No. 1No. 1No. 1No. 1No.

CIRCUIT DIAGRAM

0-50mA

470

+
0 -3 0 V

A ( S i ) IN 4 0 0 7 (G e) D R 2 5 K

+
0-2V

Fig 1: Forward Bias

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0-50A

470

0 -3 0 V (G e ) D R 2 5

A K

0-10V

Fig 2: Reverse Bias

PROCEDURE:

1. Connect the circuit for forward bias as shown in fig.1. 2. Vary the supply voltage and note down the voltage drop across diode and current through the diode. 3. Connect the circuit for reverse bias as shown in fig. 2 and repeat the steps 2. 4. Draw the V-I characteristic and find cutin voltage from the graph . 5. From the graph also find

V I V b. ac Forward resistance using R f = I V c. the reverse resistance using Rr = I

a. dc Forward resistance using R f =

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Exp. No.
READINGS: a. Forward Bias Sl No. VF(V) IF(mA) Sl. No. b. Reverse Bias VR
(V)

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IR (A)

MODEL GRAPHS:

Forward Bias

Reverse Bias

VR
IF

IF

IF VF VF Cutin Voltage VF

IR (A)

RESULTS:

Si Diode Cutin Voltage Forward Resistance(Static) Forward Resistance(Dynamic) Reverse Resistance

Ge Diode

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