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PN JUNCTION DIODE CHARACTERISTICS

AIM

: To obtain the V-I characteristics of PN junction diode (both Ge and Si ) in forward & reverse bias conditions and also determine the cutin Voltage, forward & reverse resistances.

APPARATUS :

S.No. 1. 2. 3. 4. 5.

Name of the Apparatus IN4007 & DR25 Power Supply Ammeter Voltmeter Resistor

Range 0-30V 0-50mA 0-5V 470Ω

Quantity Each 1No. 1No. 1No. 1No. 1No.

CIRCUIT DIAGRAM

:

0-50mA

+

A

-

470Ω

+
0 -3 0 V

A ( S i ) – IN 4 0 0 7 (G e) – D R 2 5 K

+
0-2V

-

-

Fig 1: Forward Bias

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com Exp.jwjobs. ac Forward resistance using R f = ∆I V c. Draw the V-I characteristic and find cutin voltage from the graph . Date : www. Connect the circuit for reverse bias as shown in fig. 4. Connect the circuit for forward bias as shown in fig. 2 and repeat the steps 2.jntuworld. dc Forward resistance using R f = www.jntuworld. From the graph also find V I ∆V b.net 0-50µA - A + 470Ω 0 -3 0 V (G e ) – D R 2 5 A K 0-10V + + Fig 2: Reverse Bias PROCEDURE: 1. 2. No.com .www.1. 3. 5. Vary the supply voltage and note down the voltage drop across diode and current through the diode. the reverse resistance using Rr = I a.

www. No. No.jwjobs. READINGS: a.com .jntuworld. Reverse Bias VR (V) www. Forward Bias Sl No.jntuworld. VF(V) IF(mA) Sl.net Date : IR (µA) MODEL GRAPHS: Forward Bias Reverse Bias VR IF IF ∆IF ∆VF VF Cutin Voltage VF IR (µA) RESULTS: Si Diode Cutin Voltage Forward Resistance(Static) Forward Resistance(Dynamic) Reverse Resistance Ge Diode www. b.com Exp.