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mask
phase
shifter
electric
field at
mask
electric
field at
wafer
intensity
at wafer
Standing wave effects
• general properties of
polymers
• photoresist types
• photoresist characterization
(dissolution behavior,
sensitivity, contrast,
resolution, etching
resistance)
• resist materials
– general characteristics
– negative resists
– positive resists
• photoresist processing
Generic properties of polymers
• Polymers are long chain, usually organic (C,
O, H) molecules with high molecular weights
(1000 → >1,000,000)
• Thermoplastic polymers -- chains are free to
move past each other at high temperatures,
and become entangled at low temperatures
linear chains (LDPE) branched chains
(HDPE)
• Thermoset polymers -- chains are
crosslinked together to form a three-
dimensional network (example: epoxy resins)
• The properties of a polymer are determined
by its chemical constituents, its molecular
weight (and M.W. distribution) and the degree
Important polymers in photoresists
OH OH
CH2
m-cresol formaldehyde novolac
CH3
polymer
(novolac = “new lacquer
Important polymers in photoresists
H H CH3 H H H CH3 H
C C C C C C C C
H H H H
cis-isoprene poly (cis-isoprene)
H CH3 H CH3
C C C C
H C O H C O
O O
CH3 CH3
methyl methacrylate
poly(methyl methacrylate) (PMMA)
Mechanical properties of polymers
• The mechanical properties of polymers (which
are important to photoresist processing)
strongly depend on the long chain nature of
these materials and both intra- and inter-chain
reactions
• The glass transition temperature Tg is an
important parameter
– T < Tg -- only short-range motions of the
polymer chain are possible → elastic
behavior
– T > Tg -- long-range motions of the polymer
chain are possible → viscous behavior
• Both the chemical structure (crosslinking
Positive versus negative resists
mask
photoresist
substrate
development
1.0 1.0
0.5 0.5
D
D100
o
1
γ =
D100
log10
D0
2,6-bis(4-azidobenzylidene
cyclohexanone
N3 N3
(1) O O (2)
N2 •
•
hν , -N2
SO2R DQ SO2R carbene
O Wolff O
(4) rearrangement (3)
C OH C
H2 O
SOindenecarboxylic
2R SO2R ketene
acid (ICA)
Photoresist processing
Wafer preparation
This will be
Adhesion promoter These steps are
repeated 15 to
being
30 times during
Resist application performed on
the processing
highly value-
of a given wafer
Softbake added wafers --
-- all
any error will
lithography
Exposure negate (trash)
steps must be
all of the prior
aligned to each
Post-exposure bake work
other
Develop
Hardbake
Post-development treatments