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2n3904

2n3904

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Published by Dika Wahyu Suryadi

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Published by: Dika Wahyu Suryadi on Jun 18, 2013
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2N3904
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA

Ordering Code 2N3904 2N3904-AP
s

Marking 2N3904 2N3904

Package / Shipment TO-92 / Bulk TO-92 / Ammopack

s

s

SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 TO-92 Bulk TO-92 Ammopack

APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o

Value 60 40 6 200 625 -65 to 150 150

Unit V V V mA mW
o o

C C

February 2003

1/5

95 V V V V 300 fT C CBO C EBO NF td tr Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time I C = 10 mA V CE = 20 V f = 100 MHz IE = 0 IC = 0 V CB = 10 V V EB = 0. Typ.65 60 80 100 60 30 250 270 4 18 5 0. Max.2 0.85 0.5 V f = 1 MHz f = 1 MHz MHz pF pF dB 35 35 200 50 ns ns ns ns V CE = 5 V IC = 0. duty cycle ≤ 2 % 2/5 .2N3904 THERMAL DATA R thj-amb • R thj-case • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Max Max 200 83.1 mA f = 10 Hz to 15. 50 50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 µ A 60 V V (BR)EBO I E = 10 µ A 6 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 10 mA I C = 50 mA I C = 10 mA I C = 50 mA IC IC IC IC IC = = = = = 0.7 KHz R G = 1 KΩ I C = 10 mA V CC = 30 V I B = 1 mA I B1 = -I B2 = 1 mA ts Storage Time I C = 10 mA Fall Time V CC = 30 V tf ∗ Pulsed: Pulse duration = 300 µs.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min.2 0.1 mA 1 mA 10 mA 50 mA 100 mA I B = 1 mA I B = 5 mA I B = 1 mA I B = 5 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V 0.

70 2.41 4 degree TYP.022 6 degree DIM. A b D E e e1 L R S1 W V 4.059 0.32 0.41 1.085 0. 4.194 0.055 0.016 4 degree inch TYP.16 1. MAX.14 12.14 0.36 4.52 0.2N3904 TO-92 MECHANICAL DATA mm MIN.195 0. 3/5 .56 6 degree MIN.105 0.30 2.95 3.020 0.500 0.095 0.130 0. 0.045 0.045 0.41 1.175 0.094 0.51 4. 0.170 0.67 1.609 0.014 0.94 2. MAX.95 0.45 3.49 2.155 0.40 15.

00 9.118 -0.94 2.630 0. 0.00 4.00 0.80 12.F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P mm TYP.150 0.091 0.063 0.2N3904 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM.150 0.00 MIN.019 0.709 0.80 1.50 3.00 MAX.689 0.508 0.48 12.610 0. A1 T T1 T2 d P0 P2 F1.157 MAX.20 0.079 0.224 0.50 25.60 2.70 8.335 0.250 0.500 0.00 -1.00 19.364 0.165 0.65 2.020 0.278 0.35 2.50 5.50 16.50 5.00 6.54 18.039 4/5 .00 16.25 0.90 7. 0.100 0.807 0.05 2.984 0. 12.035 0.222 0.039 3.354 0.00 4.44 -2. 4.30 0.90 11.00 6.50 20.80 3.50 18.650 0.096 -0.433 0. MIN.728 0.236 0.70 6.50 15.492 0.116 0.00 1.00 17.248 0. inch TYP.079 0.189 0.30 9.748 0.

Morocco Singapore .Finland . This publication supersedes and replaces all information previously supplied. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia .United Kingdom . http://www.Italy . However.United States.2N3904 Information furnished is believed to be accurate and reliable.China . No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Germany .Canada .Hong Kong .France .com 5/5 .Spain .India .Sweden .Brazil . STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.st. STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.Japan .Switzerland .Malaysia . Specification mentioned in this publication are subject to change without notice.Israel .Malta .

This datasheet has been download from: www. .datasheetcatalog.com Datasheets for electronics components.

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