SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD388

www.datasheet4u.com

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 140 7 8 80 150 -55~150 UNIT V V V A W

1 0. IC=0 IC=1A .IB=0 IE=10mA .SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.6A IC=6A. IE=0 VEB=7V. IB=0. VCE=5V IC=1A .0 2.com 2SD388 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. IB=0.1 V V mA mA MHz 2 .IC=0 IC=6A.5 0.datasheet4u. MAX UNIT V V 2. VCE=5V IC=5A .6A VCB=150V. VCE=10V 50 20 9 MIN 140 7 www.2A .

1mm) 3 .com 2SD388 Fig.SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.2 outline dimensions (unindicated tolerance:±0.

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