BC546/547/548/549/550

BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

1

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 30 65 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C

VCEO

Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA

hFE Classification
Classification hFE
©2002 Fairchild Semiconductor Corporation

A 110 ~ 220

B 200 ~ 450

C 420 ~ 800

Rev. A2, August 2002

1 1 10 100 1000 1 0.2 VCE[V].0 1.1 0.1 1 10 100 V CB[V]. COLLECTOR-EMITTER VOLTAGE VBE[V]. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. SATURATION VOLTAGE 10000 VCE = 5V 1000 IC = 10 IB hFE. COLLECTOR CURRENT IC[mA]. BASE-EMITTER VOLTAGE Figure 1. COLLECTOR CURRENT Figure 3. VCE(sat)[mV]. CAPACITANCE f=1MHz IE = 0 10 VCE = 5V 100 1 10 0.2 0.8 1.0 0. COLLECTOR CURRENT IB = 400µA VCE = 5V 10 60 40 IB = 150µA IB = 100µA 1 20 IB = 50µA 0 0 2 4 6 8 10 12 14 16 18 20 0. August 2002 . Static Characteristic Figure 2.4 0.BC546/547/548/549/550 Typical Characteristics 100 100 80 IB = 350µA IB = 300µA IB = 250µA IB = 200µA IC[mA]. CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF]. COLLECTOR CURRENT IC[A]. COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. A2. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 fT.6 0. Transfer Characteristic VBE(sat). DC CURRENT GAIN 1000 V BE(sat) 100 100 10 V CE(sat) 1 1 10 100 1000 10 1 10 100 1000 IC[mA]. COLLECTOR-BASE VOLTAGE IC[mA].

46 14.27 ±0.02 ±0.BC546/547/548/549/550 Package Dimensions TO-92 4.05 +0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev.20 1.27TYP [1.05 +0.20] 3.58 –0.10 4.38 –0.40 ±0.20 1.27TYP [1.38 –0.58 ±0.47 ±0.20] 0.27 ±0.86MAX 1.10 (R2.10 0.15 +0. August 2002 .10 3. A2.25 0.60 ±0.29) (0.

NOR THE RIGHTS OF OTHERS. I1 . This datasheet contains preliminary data. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 2. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. Specifications may change in any manner without notice. or to affect its safety or effectiveness.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY. Around the world. This datasheet contains final specifications. (a) are intended for surgical implant into the body. Life support devices or systems are devices or systems which. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. can be reasonably expected to result in significant injury to the user. FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. or (b) support or sustain life. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. The datasheet is printed for reference information only. or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling. As used herein: 1. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. and supplementary data will be published at a later date.

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