9/3/13

NASA ADS: Quantum effects in MOSFETs

The Smithsonian/NASA Astrophysics Data System
Home Help Sitemap quantum effects in mosfets Search Fulltext Article Find Similar Articles Full record info

Quantum effects in MOSFETs
Ontalus, Viorel Catalin ProQuest Dissertations And Theses; Thesis (Ph.D.)--Lehigh University, 2000.; Publication Number: AAI9995563; ISBN: 9780493038322; Source: Dissertation Abstracts International, Volume: 61-11, Section: B, page: 5929.; 137 p. The focus of our research was to understand the electron-electron interaction in silicon devices. One consequence of this interaction is that the "effective g-factor," g*, (which determines the electron's energy in a magnetic field) is larger in silicon than in vacuum (where g* = 2). It was predicted that the gate oxide thickness modulates the interaction strength through the effect of the image charge in the metal gate. Our technique is based on measurements on MOSFET transistors at low temperatures in magnetic fields. We developed an original method to extract g* using magneto-conductivity versus gate voltage plots and computer simulations based on electron density of states in a magnetic field. The simulation method relies on quantum mechanical results on density of states and broadening. For the first time, simulations based on all the broadening forms proposed in the literature were carried out, allowing a comparison of magneto-conductivity curves derived from the all the proposed models. We obtained MOSFETs from various sources and determined their device characteristics. The devices had gate oxide thickness values of 50 A, 39 A, 35 A and 30 A making this the first study of its kind in this thickness range. Measurements were made over a wide range of temperatures, at various magnetic fields. The data revealed the differences in transistor behavior with the change in temperature. Device geometry proved to be a decisive factor in MOSFET characteristics. The combination of several types of measurements made possible the testing of quantum theory predictions and indicated directions where new theory developments are needed in order to better describe the experimental data.

The ADS is Operated by the Smithsonian Astrophysical Observatory under NASA Grant NNX09AB39G

adsabs.harvard.edu/abs/2000PhDT........70O

1/1

Sign up to vote on this title
UsefulNot useful