Selector Guide Plastic-Encapsulated Transistors GreenLine™ Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs

Small-Signal Tuning and Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index

1 2 3 4 5 6 7 8 9 10 11

Motorola Small-Signal Transistors, FETs and Diodes Device Data

TMOS® is a registered trademark of Motorola Inc. HDTMOS and GreenLine are trademarks of Motorola Inc. Thermal Clad is a trademark of the Bergquist Company.

Motorola Small-Signal Transistors, FETs and Diodes Device Data

SMALL–SIGNAL TRANSISTORS, FETs AND DIODES
This publication presents technical information for the several product families that comprise the Motorola small–signal semiconductor line. The families include bipolar transistors, field–effect transistors, and diodes. These are available in a variety of through hole and surface mount packages. Complete device specifications and typical performance curves are given on individual data sheets, which are grouped by the various families. A quick comparison of performance characteristics is presented in the easy–to–use selector guide in the first section. The tables will assist in the selection of the proper device for a specific application. Seperate sections are included to describe package outline drawings and footprints and product reliability and quality considerations. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor devices any license under the patent rights to the manufacturer. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

© Motorola, Inc. 1997 Previous Edition © 1994 Printed in U.S.A. ”All Rights Reserved”

Motorola Small–Signal Transistors, FETs and Diodes Device Data

i

About This Revision
To accomodate the increasing requirements for surface mount components, this publication adds a variety of device types in several choices of surface mount packages. • An expanded MOSFET portfolio to include new lower RDS(on) HDTMOS devices in the TSOP–6 package. • Dual transistors and diodes in the SC–70 multi–lead package. • A Family of transistors and diodes in the smaller SC–90 package. It should be noted that Metal Can Transistors previously listed in this data book have been removed for this revision. Replacement devices for these parts can be found in Chapter 10.

ii

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola Device Classifications
In an effort to provide current information to the customer regarding the status of any given device, Motorola has classified all devices into three categories: Preferred devices, Current product and Not Recommended for New Design products. A Preferred device is a device which is recommended as a first choice for future use. These devices are ”preferred” by virtue of their performance, price functionality, or combination of attributes which offer the overall ”best” value to the customer. This category contains both advanced and mature devices which will remain available for the foreseeable future (generally 3 to 5 years). Device types identified as ”current” are not a first choice product for new designs, but will continue to be available because of the popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a ”preferred device” is a ”current” device.

Products designated as ”Not Recommended for New Design” may become obsolete as dictated by poor market acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do not represent a good selection for new device designs or long term usage.
All ”Not Recommended for New Design” devices have been removed from the data book. In the event the device you need is no longer found within an appropriate section of the data book, refer to the Replacement Devices index at the back of the book to see if there is a Replacement Part for the device in question.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

iii

Table of Contents
Selector Guide . . . . . . . . . . . . . . . . . . . . . 1–1
Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–2 Plastic–Encapsulated Transistors . . . . . . . . . . . . . . . . 1–2 Plastic–Encapsulated Multiple Transistors . . . . . . . . . 1–8 Plastic–Encapsulated Surface Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–10 Field–Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 1–18 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–18 TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–20 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 1–21 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 1–23 Tuning Diodes  Abrupt Junction . . . . . . . . . . . . . . . 1–23 Tuning Diodes  Hyper–Abrupt Junction . . . . . . . . 1–26 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–29 Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–31 Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 1–35 GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–36 Small Signal Multi–Integrated Devices . . . . . . . . . . . 1–38

Small–Signal Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . 5–1
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–2 5–2 5–2 5–3

Tape and Reel Specifications and Packaging Specifications . . . . . . . . . . . . 6–1
Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 6–2 Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 6–5

Surface Mount Information . . . . . . . . . 7–1
Information for Using Surface Mount Packages . . . . . . . 7–2 Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . 7–4

Package Outline Dimensions . . . . . . . 8–1
Package Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . 8–2

Plastic–Encapsulated Transistors . . . 2–1
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–2 2–2 2–2 2–3

Reliability and Quality Assurance . . . 9–1
Outgoing Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . . . 9–2 9–2 9–4 9–4 9–4 9–5 9–7

GreenLine™ Portfolio . . . . . . . . . . . . . . . 3–1
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–2

Small–Signal Field–Effect Transistors and MOSFETs . . . . . . . . . . . . 4–1
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–2 4–2 4–2 4–3

Replacement Devices . . . . . . . . . . . . . 10–1 Alphanumeric Index . . . . . . . . . . . . . . . 11–1

iv

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Section 1
Selector Guide

In Brief . . .
This selector guide highlights semiconductors that are the most popular and have a history of high usage for the most applications. A large selection of encapsulated plastic transistors, FETs and diodes are available for surface mount and insertion assembly technology. Plastic packages include TO-92 (TO–226AA), 1-Watt TO-92 (TO–226AE), SOT-23, SC-70/SOT-323, SC–90/SOT–416, SC-59, SOD-123, SOT–223, SOT–363, and TSOP–6. Plastic multiples are available in 14–pin and 16–pin dual–in–line packages for insertion applications: SO–14 and SO–16 for surface mount applications.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–1

Bipolar Transistors
CASE 29–05 TO–226AE 1–WATT (TO–92)

Plastic–Encapsulated Transistors
Motorola’s Small Signal TO–226 plastic transistors encompass hundreds of devices with a wide variety of characteristics for general–purpose, amplifier and switching applications. The popular high–volume package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems. All devices are laser marked for ease of identification and shipped in antistatic containers, as part of Motorola’s ongoing practice of maintaining the highest standards of quality and reliability.

1

23

1

23

CASE 29–04 TO–226AA (TO–92)

Table 1. Plastic–Encapsulated General–Purpose Transistors These general–purpose transistors are designed for small–signal amplification from dc to low ratio frequencies. They are also useful as oscillators and general–purpose switches. Complementary devices shown where available (Tables 1–4).
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA NF dB Max

NPN

PNP

Style

Case 29–04 — TO–226AA (TO–92)
MPS8099 MPSA06 2N4410 BC546 BC546B MPSA05 — BC182 BC237B BC337 BC547 BC547A BC547B BC547C MPSA20 MPS2222A 2N4401 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338
(1) Typical

MPS8599 MPSA56 — BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 — 2N4403 2N4402 MPS6652 2N3905 2N3906 — — BC558B — 2N4125 — BC328

80 80 80 65 65 60 60 50 45 45 45 45 45 45 40 40 40 40 40 40 40 30 30 30 30 30 25 25

150 100 60 150 150 100 200 200(1) 150 210(1) 150 150 150 150 125 300 200 150 100 200 250 300(1) 300(1) 300(1) 300 200 250 210(1)

10 10 10 10 10 10 50 10 10 10 10 10 10 10 5.0 20 20 20 50 10 10 10 10 10 10 10 10 10

500 500 250 100 100 500 600 100 100 800 100 100 100 100 100 600 600 600 1000 200 200 100 100 100 100 200 200 800

100 100 60 120 180 100 100 120 200 100 120 120 180 380 40 100 100 50 50 50 100 110 120 200 420 50 120 100

300 — 400 450 450 — 300 500 460 630 800 220 450 800 400 300 300 150 — 150 300 800 220 450 800 150 360 630

1.0 100 10 2.0 2.0 100 150 2.0 2.0 100 2.0 2.0 2.0 2.0 5.0 150 150 150 500 10 10 2.0 2.0 2.0 2.0 2.0 2.0 100

— — — 10 10 — — 10 10 — 10 10 10 10 — — — — — 6.0 5.0 10 10 10 10 6.0 4.0 —

1 1 1 17 17 1 1 14 17 17 17 17 17 17 1 1 1 1 1 1 1 17 17 17 17 1 1 17

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Transistors (continued)
Table 1. Plastic–Encapsulated General–Purpose Transistors (continued)
V(BR)CEO Volts Min fT @ IC MHz Min mA IC A Max hFE @ IC Min Max mA VCE(sat) @ IC @ IB Volts Max mA mA Style

NPN

PNP

Case 29–05 — TO–226AE (1–WATT TO–92)
BDC01D BDB01C MPS6717 MPSW06 — BDB02C — MPSW56 100 80 80 80 50 50 50 50 200 200 200 200 0.5 0.5 0.5 0.5 40 40 80 80 400 400 — — 100 100 50 50 0.7 0.7 0.5 0.4 1000 1000 250 250 100 100 10 10 14 1 1 1

Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity These devices are designed to use on applications where good hFE linearity and low–noise characteristics are required: Instrumentation, hi–fi preamplifier.
hFE @ IC V(BR)CEO Volts Min Max mA VT(4) mV Typ NF(5) dB Max fT MHz Typ

NPN

PNP

Style

Case 29–04 — TO–226AA (TO–92)
— MPS6428 BC239 BC550B BC550C MPSA18 MPS3904 — BC549B BC549C 2N5088 2N5089(6)

MPS6521
(1) (2) (4) (5) (7) (8)

2N5087 — — — BC560C — MPS3906 MPS4250 BC559B BC559C — — MPS6523

50 50 45 45 45 45 40 40 30 30 30 25 25

250 250 120 180 380 500 100 250 200 380 350 450 300

800 650 800 450 800 — 300 — 450 800 — — 600

0.1 0.1 2.0 2.0 2.0 1.0 10 10 2.0 2.0 1.0 1.0 2.0

— 7.0(7) 9.5 — — 6.5(1) — — — — — — —

2.0 3.5(8) 2.0(1) 2.5 2.5 — 5.0 2.0 2.5 2.5 3.0 2.0 3.0

40(2) 100(2) 280 250 250 160 200(2) — 250 250 50 50 —

1 1 17 17 17 1 1 1 17 17 1 1 1

Typical Min VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 kΩ , IC = 200 µA, VCE = 5.0 Volts. NF: Noise Figure at RS = 2.0 kΩ, IC = 200 µA, VCE = 5.0 Volts. f = 30 Hz to 15 kHz. RS = 10 kΩ , BW = 1.0 Hz, f = 100 MHz RS = 500 Ω , BW = 1.0 Hz, f = 10 MHz

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–3

Plastic–Encapsulated Transistors (continued)
Table 3. Plastic–Encapsulated Darlington Transistors Darlington amplifiers are cascade transistors used in applications requiring very high–gain and input impedance. These devices have monolithic construction.
hFE @ IC NPN PNP V(BR)CEO Volts IC Max Min Max mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC Min mA Style

Case 29–05 — TO–226AE (1–WATT TO–92)
MPSW45A — — MPSW64
50 30 1000 1000 25K 20K 150K — 200 100 1.5 1.5 1000 100 2.0 0.1 100 125 200 10 1 1

Case 29–04 — TO–226AA (TO–92)
MPSA29 BC373 MPSA27 BC618 — 2N6427 2N6426 MPSA14 MPSA13 BC517
— — MPSA77 — MPSA75 — — MPSA64 MPSA63 — 100 80 60 55 40 40 40 30 30 30 500 1000 500 1000 500 500 500 500 500 1000 10K 10K 10K 10K 10K 20K 30K 20K 10K 30K — 160K — 50K — 200K 300K — — — 100 100 100 200 100 100 100 100 100 20 1.5 1.1 1.5 1.1 1.5 1.5 1.5 1.5 1.5 1.0 100 250 100 200 100 500 500 100 100 100 0.1 0.25 0.1 0.2 0.1 0.5 0.5 0.1 0.1 0.1 125 100 — 150 — — 125 125 125 200(1) 10 100 — 500 — — 10 10 10 10 1 1 1 17 1 1 1 1 1 17

Table 4. Plastic–Encapsulated High–Current Transistors The following table is a listing of devices that are capable of handling a higher current range for small–signal transistors.
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA VCE(sat) @ IC & IB Volts Max mA mA Style

NPN

PNP

Case 29–05 — TO–226AE (1–WATT TO–92)
MPS6715 MPSW01A MPS6727 MPSW51A 40 40 — 50 — 50 1000 1000 50 50 — — 1000 1000 0.5 0.5/0.7 1000 1000 100 100 1 1

Case 29–04 — TO–226AA (TO–92)
BC489 BC639 MPS651 MPS650 BC368
(1) Typical

BC490 BC640 MPS751 MPS750 BC369

80 80 60 40 20

200/150(1) 60 75 75 65

50 10 50 50 10

1000 500 2000 2000 1000

60 40 75 75 60

400 160 — — —

100 150 1000 1000 1000

0.3/0.5 0.5 0.5 0.5 0.5

1000 500 2000 2000 1000

100 50 200 200 100

17 14 1 1 1

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Transistors (continued)
Table 5. Plastic–Encapsulated High–Voltage Amplifier Transistors These high–voltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for other applications requiring high–voltage capability at relatively low collector current. These devices are listed in order of decreasing breakdown voltage (V(BR)CEO).
Device Type V(BR)CEO Volts Min IC Amp Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA MHz Min f T @ IC mA Style

Case 29–05 — TO–226AE (1–WATT TO–92) — NPN
MPSW42
300 0.5 40 30 0.5 20 2.0 50 10 1

Case 29–05 — TO–226AE (1–WATT TO–92) — PNP
MPSW92
300 0.5 25 30 0.5 20 2.0 50 10 1

Case 29–04 — TO–226AA (TO–92) — NPN
BF844 MPSA44 2N6517 BF393 MPSA42 2N5551 400 400 350 300 300 160 0.3 0.3 0.5 0.5 0.5 0.6 50 40 30 40 40 80 10 100 30 10 10 10 0.5 0.75 0.3 0.2 0.5 0.15 10 50 10 20 20 10 1.0 5.0 1.0 2.0 2.0 1.0 — — 40 50 50 100 — — 10 10 10 10 1 1 1 1 1 1

Case 29–04 — TO–226AA (TO–92) — PNP
BF493S 2N6520 MPSA92 2N6519 2N5401 350 350 300 300 150 0.5 0.5 0.5 0.5 0.6 40 30 40 45 60 10 30 10 30 10 20 0.3 0.5 0.3 0.2 20 10 20 10 10 2.0 1.0 2.0 1.0 1.0 50 40 50 40 100 10 10 10 10 10 1 1 1 1 1

Case 29–04 — TO–226AA (TO–92)
V(BR)CEO Volts Min 300 250 IC Amp Cont 0.5 0.5 hFE @ IC Min 50 50 mA 25 25 VCE(sat) @ IC & IB Volts Max 2.0 2.0 mA 20 20 mA 2.0 2.0 f T @ IC MHz Min 60 60 mA 10 10 Style 14 14

NPN BF420 BF422

PNP BF421 BF423

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–5

Plastic–Encapsulated Transistors (continued)
Table 6. Plastic–Encapsulated RF Transistors The RF transistors are designed for small–signal amplification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges.
V(BR)CEO Volts Min IC mA Max hFE @ IC Min mA VCE V fT MHz Typ CRE/CRB pF Max NF dB Typ

Device Type

f MHz

Style

Case 29–04 — TO–226AA (TO–92) — NPN
BF224 MPSH11 MPSH10 BF199 BF959 MPSH17 MPS918 MPS5179 MPS3563 30 25 25 25 20 15 15 12 12 50 — — 100 100 — 50 50 50 30 60 60 40 40 25 20 25 20 7.0 4.0 4.0 7.0 20 5.0 8.0 3.0 8.0 10 10 10 10 10 10 10 1.0 10 600 650(2) 650(2) 750 600(2) 800(2) 600(2) 2000(3) 800 0.28 0.9 0.65 0.35 0.65 0.9 1.7 — 1.7 2.5 — — 2.5 3.0 6.0(3) 6.0(3) 5.0(3) 6.0(3) 100 — — 35 200 200 60 200 60 21 2 2 21 21 2 1 1 1

Case 29–04 — TO–266AA (TO–92) — PNP
MPSH81
20 50 60 5.0 10 600(2) 0.85 — — 2

Table 7. Plastic–Encapsulated High–Speed Saturated Switching Transistors
ton & toff @ IC Device Type ns Max ns Max mA V(BR)CEO Volts Min hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA fT @ IC MHz Min mA Style

Case 29–04 — TO–226AA (TO–92) — NPN
2N4264 MPS3646 MPS2369A
(2) Min (3) Max (9) AGC Capable

25 18 12

35 28 18

10 300 10

15 15 15

40 30 40

10 30 10

0.22 0.2 0.2

10 30 10

1.0 3.0 1.0

300 350 —

10 30 —

1 1 1

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Transistors (continued)
Table 8. Plastic–Encapsulated Choppers Devices are listed in decreasing V(BR)EBO.
Device Type V(BR)EBO Volts Min IC Amp(1) Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC MHz Min mA Style

Case 29–04 — TO–226AA (TO–92) — NPN
MPSA17
15 100 200 5.0 0.25 10 1.0 80 5.0 1

Case 29–04 — TO–266AA (TO–92) — PNP
MPS404A
–25 –150 30 –12 –0.2 –24 1.0 — — 1

Table 9. Plastic–Encapsulated Telecom Transistors These devices are special product ranges intended for use in telecom applications.
PD mW 25°C Amb IC mA Cont hFE @ IC @ VCE Min Max mA Volts fT MHz Min Style

Device Type

V(BR)CEO Volts

Case 29–04 — TO–226AA (TO–92) — NPN
P2N2222A 40 625 600 75 — 10 10 300 17

Case 29–04 — TO–226AA (TO–92) — PNP
P2N2907A
(1) Typical

60

625

600

100

10

10

200

17

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–7

Plastic–Encapsulated Multiple Transistors
The manufacturing trend has been toward printed circuit board design with requirements for smaller packages with more functions. In the case of discrete components the use of the multiple device package helps to reduce board space requirements and assembly costs. Many of the most popular devices are offered in the standard plastic DIP and surface mount IC packages. This includes small–signal NPN and PNP bipolar transistors, N–channel and P–channel FETs, as well as diode arrays.
14 1 CASE 646–06 (TO–116) STYLE 1

16 1 CASE 751B–05 SO–16 STYLE 4

Specification Tables The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification. This applies to Table 10 and 11 of this section only.

KEY
Ref. Point Subscript Unit

hFE1 hFE2 VCE Volts IC Amp Max hFE @ IC Min
Common–emitter DC Current Gain. Units for test Current: A — ampere m — mA u — µA

TYPE NO.
Alphanumeric listing type numbers Identification Code

ID

PD Watts One Die Only

∆VBE mV Max

Gp dB Min

NF @ dB Max

f

fT MHz Min

Cob pF Max

ton ns Max

toff ns Max

VCE @ (sat) Volts Max

IC IB

& IC Unit

First Letter: Polarity C — both types in multiple device N — NPN P — PNP Second Letter: Use A — General Purpose Amplifier E — Low Noise Audio Amplifier F — Low Noise RF Amplifier G — General Purpose Amplifier and Switch H — Tuned RF/IF Amplifier M — Differential Amplifier S — High Speed Switch D — Darlington

Gp — Power Gain NF — Noise Figure f — Test Frequency AUD — 10–15 kHz Frequency Units: H — Hertz M — MHz K — kHz G — GHz VCE(sat) — Collector–Emitter Saturation Voltage IC — Test Current Current Units: u — µA m — mA A — Amp hFE1/hFE2 — Current Gain Ratio VBE — Differential Base Voltage |VBE1 — VBE2|. Differential Amplifiers ton — turn–on time toff — turn–off time

Current–Gain–Bandwidth Product

Continuous (DC) Collector Current

Power Dissipation specified at 25°C. Single die rating. Ref. Point: A — Ambient Temperature C — Case Temperature

Rated Minimum Collector–Emitter Voltage Subscript letter identifies base termination listed below in order of preference. SUBSCRIPT: 0 — VCEO, open

Output Capacitance, common–base. Shown without distinction: Ccb — Collector–Base Capacitance Cre — Common–Emitter Reverse Transfer Capacitance

Selector Guide 1–8

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Multiple Transistors (continued)
Table 10. Plastic–Encapsulated Multiple Transistors — Quad The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE1 PD Watts One Die Only hFE2 VCEO Volts IC Amp Max hFE @ IC Min fT MHz Min Cob pF Max ∆VBE mV Max toff ns Max Gp dB Min VCE (sat) Volts Max NF @ dB Max Typ(1) f

Device

ID

ton ns Max

@

IC IB IC

Case 646–06 — TO–116
MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907A MPQ3467 MPQ3725 MPQ3762 MPQ3798 MPQ3799 MPQ3904 MPQ3906 MPQ6001 MPQ6002 MPQ6100A MPQ6426 MPQ6502 MPQ6600A1 MPQ6700 MPQ6842 MPQ7043 MPQ7042 MPQ7051 MPQ7093
NA NS NA NA PA PS NS PS PA PA NG PG CG CG CA ND CG CA CA CA NA NA CG PA 0.65 0.5 0.625 0.625 0.65 0.75 1.0 0.75 0.625 0.625 0.5 0.5 0.65 0.65 0.5 0.5 0.65 0.5 0.5 0.75 0.75 0.75 0.75 0.75 40 15 40 40 60 40 40 40 40 60 40 40 30 30 45 30 30 45 40 40 250 200 150 250 0.5 0.5 0.05 0.05 0.6 1.0 1.0 1.5 0.05 0.05 0.2 0.2 0.5 0.5 0.05 0.5 0.5 0.05 0.2 0.5 0.5 0.5 0.5 0.5 100 40 150 300 100 20 25 35 150 300 75 75 40 100 150 10K 100 150 70 70 25 25 25 25 150 m 10 m 1.0 m 1.0 m 150 m 500 m 500 m 150 m 0.1 m 0.1 m 10 m 10 m 150 m 150 m 1.0 m 100 m 150 m 1.0 m 10 m 10 m 1.0 m 1.0 m 1.0 m 1.0 m 200 450 50 50 200 125 250 150 60 60 250 200 200 200 50 125 200 50 200 300 50 50 50 50 8.0 4.0 35(1) 9.0(1) 285(1) 15(1) 0.3 0.25 10 10 3.0(1) 2.0(1) 10 10 10 10 3.0(1) 2.0(1) 10 10 10 10 4.0(1) 10 10 10 10 10 10 10 10 10 150 m 10 m AUD AUD 150 m 500 m 500 m 500 m AUD AUD 10 m 10 m 150 m 150 m AUD 100 m 150 m 1.0 m 1.0 m 0.5 m 20 m 20 m 20 m 20 m

8.0 25 10 15 4.0 4.0 4.0 4.5 8.0 8.0 4.0 8.0 8.0 4.0 4.5 4.5 5.0 5.0 6.0 5.0

45(1) 40 35 50

180(1) 90 60 120

0.4 0.5 0.45 0.55

37(1) 43(1) 30(1) 30(1) — 30(1) 0.8 45

136(1) 155(1) 225(1) 225(1) — 225(1) 20 150

0.2 0.25 0.4 0.4 1.5 0.4 0.25 0.25 0.15 0.5 0.5 0.7 0.5

Table 11. Plastic–Encapsulated Multiple Transistors — Quad Surface Mount The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package. These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC Device V(BR)CEO V(BR)CBO Min mA MHz Min fT @ IC mA

Case 751B–05 — SO–16
MMPQ2222A MMPQ2369 MMPQ2907A MMPQ3467 MMPQ3725 MMPQ3904 MMPQ3906 MMPQ6700 (12)
40 15 50 40 40 40 40 40 75 40 60 40 60 60 40 40 40 20 50 20 25 75 75 70 500 100 500 500 500 10 10 10 200 450 200 125 250 250 200 200 20 10 50 50 50 10 10 10

(1) Typical (12) NPN/PNP NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–9

Plastic–Encapsulated Surface Mount Transistors
1

3

3 1 1 2 CASE 318D–04 SC–59 2 3

4

This section of the selector guide lists the small–signal plastic devices that are available for surface mount applications. These devices are encapsulated with the latest state–of–the–art mold compounds that enhance reliability and exhibit excellent performance in high temperature and high humidity environments. This package offers higher power dissipation capability for small–signal applications.

2

CASE 318–08 TO–236AB SOT–23

CASE 318E–04 SOT–223

3 1 2 CASE 419–02 SC–70/SOT–323 1

6

5

3 4 1 2

3 CASE 419B–01 SOT–363

2

CASE 463–01 SOT–416/SC–90

Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors The following tables are a listing of small–signal general–purpose transistors in the SOT–23, SC–59, SOT–223, SC–70, SC–90, and SOT–363 surface mount packages. These devices are intended for small–signal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and general–purpose, low voltage switches. Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN
BC846ALT1 BC846BLT1 BC817–16LT1 BC817–25LT1 BC817–40LT1 BC847ALT1 BC847BLT1 BC847CLT1 MMBT2222ALT1 MMBT3904LT1 MMBT4401LT1 BC848ALT1 BC848BLT1 BC848CLT1
1A 1B 6A 6B 6C 1E 1F 1G 1P 1AM 2X 1J 1K 1L 65 65 45 45 45 45 45 45 40 40 40 30 30 30 110 200 100 160 250 110 200 420 100 100 100 110 200 420 220 450 250 400 600 220 450 800 300 300 300 220 450 800 2.0 2.0 100 100 100 2.0 2.0 2.0 150 10 150 2.0 2.0 2.0 100 100 200 200 200 100 100 100 200 300 250 100 100 100

Case 318–08 — TO–236AB (SOT–23) — PNP
BC856ALT1 BC856BLT1 MMBT2907ALT1 BC807–16LT1 BC807–25LT1 BC807–40LT1 BC857ALT1 BC857BLT1 MMBT3906LT1 MMBT4403LT1 BC858ALT1 BC858BLT1 BC858CLT1
3A 3B 2F 5A 5B 5C 3E 3F 2A 2T 3J 3K 3L 65 65 60 45 45 45 45 45 40 40 30 30 30 125 220 100 100 160 250 125 220 100 100 125 220 420 250 475 300 250 400 600 250 475 300 300 250 475 800 2.0 2.0 150 100 100 100 2.0 2.0 10 150 2.0 2.0 2.0 100 100 200 200 200 200 100 100 250 200 100 100 100

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–10

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued) Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 318D–04 — SC–59 — NPN
MSD601–RT1 MSD601–ST1 MSD602–RT1 MSD1328–RT1
YR YS WR 1DR 25 25 25 20 210 290 120 200 340 460 240 350 2.0 2.0 150 500 150(1) 150(1) 200(1) 200(1)

Case 318D–04 — SC–59 — PNP
MSB709–RT1 MSB710–RT1
AR CR 25 25 210 120 340 240 2.0 150 100(1) 200(1)

Case 419–02 — SC–70/SOT–323 —NPN
BC818WT1 BC818–25WT1 BC818–40WT1 BC846AWT1 BC846BWT1 BC847AWT1 BC847BWT1 BC847CWT1 BC848AWT1 BC848BWT1 BC848CWT1 MMBT2222AWT1 MMBT3904WT1 MSC3930–BT1 MSD1819A–RT1
6I 6F 6G 1A 1B 1E 1F 1G 1J 1K 1L 1P AM VB ZR 45 45 45 65 65 45 45 45 30 30 30 40 40 20 50 100 160 250 110 200 110 200 420 110 200 420 100 100 70 210 600 400 600 220 450 220 450 800 220 450 800 300 300 140 340 100 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 1.0 2.0 — — — 100 100 100 100 100 100 100 100 300 300 150 —

Case 419–02 — SC–70/SOT–323 —PNP
BC808–25WT1 BC808–40WT1 BC856AWT1 BC856BWT1 BC857AWT1 BC857BWT1 BC858AWT1 BC858BWT1 BC858CWT1 MMBT2907AWT1 MMBT3906WT1 MSB1218A–RT1
5F 6F 3A 3B 3E 3F 3J 3K 3L 20 2A BR 45 45 65 65 45 45 30 30 30 60 40 45 160 250 125 220 125 220 110 200 420 100 100 210 400 600 250 475 250 475 220 450 800 300 300 340 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 2.0 — — 100 100 100 100 100 100 100 200 250 —

Case 419B–01 — SOT–363 — Dual NPN
MBT3904DW1T1 MBT3904DW9T1
MA MB 40 40 100 100 300 300 10 10 300 300

Case 419B–01 — SOT–363 — Dual PNP
MBT3906DW1T1 MBT3906DW9T1
(1) Typical

A2 A3

– 40 – 40

100 100

300 300

10 10

250 250

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–11

C (OUT)

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued) Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max

B (IN)

R1 R2 E (GND)

mA

fT MHz Min

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP
MBT3946DW1T1
46 40 100 300 10 250

Case 463–01 — SOT–416/SC–90 — NPN
2SC4617
B9 50 120 560 1.0 180

Case 463–01 — SOT–416/SC–90 — PNP
2SA1774
F9 50 120 560 1.0 140

Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors Table 13. for General Purpose Applications Pinout: 1–Base, 2–Emitter, 3–Collector These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm

Case 318D–04 — SC–59
MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1
8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K

Case 318–08 — TO–236AB (SOT–23)
MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1
A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–12

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors for General Purpose Applications (continued) Pinout: 1–Base, 2–Emitter, 3–Collector
Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm

Case 419–02 — SC–70/SOT–323
MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1
8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 50 50 50 50 50 50 50 50 50 50 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K

Case 419B–01 — SOT–363 Duals
MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 50 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 80 hFE @ IC Device Marking V(BR)CEO Min mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K

R1 Ohm

R2 Ohm

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP
MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1
Device NPN PNP NPN 11 12 13 14 15 16 3X 31 32 33 34 35 50 50 50 50 50 50 50 50 50 50 50 50 Marking PNP 35 60 80 80 160 160 3.0 8.0 15 80 80 80 V(BR)CEO Volts (Min) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 hFE@ IC Min mA 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K

R1 Ohm

R2 Ohm

Case 463–01 — SOT–416/SC–90
DTC114TE DTC114YE —
— DTA114YE DTA143EE 94 69 — — 59 43 50 50 50 100 80 15 1.0 5.0 5.0 100 100 100 10K 10K 4.7K ∞ 47K 4.7K

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–13

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 14. Plastic–Encapsulated Surface Mount Switching Transistors The following tables are a listing of devices intended for high–speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance. Pinout: 1–Base, 2–Emitter, 3–Collector
Switching Time (ns) Device Marking ton toff V(BR)CEO Min hFE@ IC Max mA fT MHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT2369LT1 MMBT2369ALT1 BSV52LT1
M1J 1JA B2 12 12 12 18 18 18 15 15 12 20 20 40 — — 120 100 100 10 — — 400

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT3640LT1
2J 25 35 12 20 — 50 500

Table 15. Plastic–Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators The following table is a listing of devices intended for small–signal RF amplifier applications to VHF/UHF frequencies. These devices may also be used as VHF/UHF oscillators and mixers. Pinout: 1–Base, 2–Emitter, 3–Collector
Device Marking V(BR)CEO (13) ) Ccb( pF Max f T @ IC GHz Min mA

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTH10LT1 MMBT918LT1 MMBTH24LT1
3EM M3B M3A 25 15 30 0.7 1.7(14) 0.45 0.65 0.6 0.4 4.0 4.0 8.0

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTH81LT1 MMBTH69LT1
3D M3J 20 15 0.85 0.35(13) 0.6 2.0 5.0 10

Pinout: 1–Emitter, 2–Base, 3–Collector Case 318D–04 — SC–59 — NPN
MSC2295–BT1 MSC2295–CT1 MSC3130T1
VB VC 1S 20 20 10 1.5(13) 1.5(13) — 2.0(13) 0.15 0.15 1.4 1.0 1.0 5.0

Case 318D–04 — SC–59 — PNP
MSA1022–CT1
(13) C re (14) C ob

EC

20

0.15

1.0

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–14

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 16. Plastic–Encapsulated Surface Mount Choppers The following table is a listing of small–signal devices intended for chopper applications where a higher than normal V(BR)CEO is required in the circuit application. Pinout: 1–Base, 2–Emitter, 3–Collector
hFE @ IC Device Marking V(BR)CEO V(BR)EBO Min Max mA

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT404ALT1
2N 35 25 30 400 12

Table 17. Plastic–Encapsulated Surface Mount Darlingtons The following table is a listing of small–signal devices that have very high hFE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of descending hFE.
VCE(sat) Volts Max hFE @ IC Min Max mA

Device

Marking

V(BR)CES

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA14LT1 MMBTA13LT1
1N 1M 30 30 1.5 1.5 20K 10K — — 100 100

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTA64LT1
2V 30 1.5 20K — 100

Table 18. Plastic–Encapsulated Surface Mount Low–Noise Transistors The following table is a listing of small–signal devices intended for low noise applications in the audio range. These devices exhibit good linearity and are candidates for hi–fi and instrumentation equipment. Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of ascending NF.
NF dB Typ hFE@ IC V(BR)CEO Min Max mA fT MHz Min

Device

Marking

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT5089LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1
1R 1U 1KM 1L 2.0(15) 3.0(15) 3.0 3.0 25 60 50 45 400 — 250 500 — 800 — — 10 10 10 10 50 — 100 100

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT5087LT1
(15) Max

2Q

2.0(15)

50

250

10

40

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–15

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 19. Plastic–Encapsulated Surface Mount High–Voltage Transistors The following table is a listing of small–signal high–voltage devices designed for direct line operation requiring high voltage breakdown and relatively low current capability. Pinout: 1–Base, 2–Emitter, 3–Collector Devices are listed in order of descending breakdown voltage.
hFE@ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT6517LT1 MMBTA42LT1 MMBT5551LT1
1Z 1D G1 350 300 160 15 40 30 — — — 100 30 50 40 50 100

Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT6520LT1 MMBTA92LT1 MMBT5401LT1
2Z 2D 2L 350 300 150 15 25 50 — — — 100 30 50 40 50 100

Table 20. Plastic–Encapsulated Surface Mount Drivers The following is a listing of small–signal devices intended for medium voltage driver applications at fairly high current levels. Pinout: 1–Base, 2–Emitter, 3–Collector
hFE@ IC Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA

Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA06LT1 BSS64LT1
1GM AM 80 80 0.25 0.15 — — 100 20 — — 100 10

Case 318–08 — TO–236AB (SOT–23) — PNP
BSS63LT1 MMBTA56LT1 T1 2GM 100 80 – 0.25 – 0.25 – 0.90 — 30 100 — — 25 100

The following devices are designed to conserve energy. They offer ultra–low collector saturation voltage. Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT1010LT1
GLP 15 0.1 1.1 300 600 100

Case 318–03 — SC–59 — PNP
MSD1010T1
GLP 15 0.1 1.1 300 600 100

Table 21. Plastic–Encapsulated Surface Mount General Purpose Amplifiers Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE@ IC Device Marking V(BR)CEO Min Max mA

Case 318E–04 — SOT–223 — NPN
BCP56T1
BH 80 40 250 150

Case 318E–04 — SOT–223 — PNP Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
BCP53T1
AH 80 40 25 150

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–16

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Plastic–Encapsulated Surface Mount Transistors (continued)
Table 22. Plastic–Encapsulated Surface Mount Switching Transistors Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE Device Marking ton toff V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

Case 318E–04 — SOT–223 — NPN
PZT2222AT1
P1F 35 285 40 100 300 20 300

Case 318E–04 — SOT–223 — PNP
PZT2907AT1
P2F 45 100 60 100 300 50 200

Table 23. Plastic–Encapsulated Surface Mount Darlingtons Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
VCE(sat) Max (V) hFE Min Max @ IC (mA)

Device

Marking

V(BR)CER

Case 318E–04 — SOT–223 — NPN
BSP52T1 PZTA14T1
AS3 P1N 80 30 1.3 1.5 2000 20k — — 500 100

Case 318E–04 — SOT–223 — PNP
BSP62T1 PZTA64T1
BS3 P2V 90 30 1.3 1.5 2000 20k — — 500 100

Table 24. Plastic–Encapsulated Surface Mount High–Voltage Transistors Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE Device Marking V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

Case 318E–04 — SOT–223 — NPN
BSP19AT1 PZTA42T1 BF720T1
SP19A P1D BF720 350 300 250 40 40 50 — — — 20 10 10 70 50 60

Case 318E–04 — SOT–223 — PNP
PZTA96T1 PZTA92T1 BSP16T1 BF721T1
ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30 50 150 — 150 — 10 10 10 10 50 50 15 60

Table 25. Plastic–Encapsulated Surface Mount High Current Transistors Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
Device Marking V(BR)CEO VCE(sat) Volts hFE@ IC Min Max mA

Case 318E–04 — SOT–223 — NPN
PZT651T1 BCP68T1
651 CA 60 20 0.5 0.5 75 60 — — 1000 1000

Case 318E–04 — SOT–223 — PNP
PZT751T1 BCP69T1
ZT751 CE 60 20 0.5 0.5 75 60 — — 1000 1000

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–17

Field–Effect Transistors
JFETs
JFETs operate in the depletion mode. They are available in both P– and N–channel and are offered in both Through–hole and Surface Mount packages. Applications include general– purpose amplifiers, switches and choppers, and RF amplifiers and mixers. These devices are economical and very rugged. The drain and source are interchangeable on many typical FETs.
1 CASE 29–04 TO–226AA (TO–92)

23

Table 26. JFET Low–Frequency/Low–Noise The following table is a listing of small–signal JFETs intended for low–noise applications in the audio range. These devices exhibit good linearity and are candidates for hi–fi and instrumentation equipment.
Re Yfs
ť ť

@f

Re Yos @ f
ť ť

Device

mmho Min

kHz

µmho Max

kHz

Ciss pF Max

Crss pF Max

V(BR)GSS V(BR)GDO Volts Min

VGS(off) Volts Min Max Min

IDSS mA Max Style

Case 29–04 — TO–226AA (TO–92) — N–Channel
J202 2N5457 2N5458 — 1.0 1.5 — 1.0 1.0 — 50 50 — 1.0 1.0 — 7.0 7.0 — 3.0 3.0 40 25 25 0.8 0.5 1.0 4.0 6.0 7.0 0.9 1.0 2.0 4.5 5.0 9.0 5 5 5

Case 29–04 — TO–226AA (TO–92) — P–Channel
2N5460 2N5461 2N5462
1.0 1.5 2.0 1.0 1.0 1.0 75 75 75 1.0 1.0 1.0 7.0 7.0 7.0 2.0 2.0 2.0 40 40 40 0.75 1.0 1.8 6.0 7.5 9.0 1.0 2.0 4.0 5.0 9.0 16 7 7 7

Table 27. JFET High–Frequency Amplifiers The following is a listing of small–signal JFETs that are intended for hi–frequency applications. These are candidates for VHF/UHF oscillators, mixers and front–end amplifiers.
Re Yfs @ f
ť ť

Re Yos @ f
ť ť

Device

mmho Min

MHz

µmho Max

MHz

Ciss pF Max

Crss pF Max

NF @ RG = 1K dB Max f MHz

V(BR)GSS V(BR)GDO Volts Min

VGS(off) Volts Min Max

IDSS mA Min Max Style

Case 29–04 — TO–226AA (TO–92) — N–Channel
MPF102 2N5484 2N5485 2N5486 J308 J309 J310
(1) Typical

1.6 2.5 3.0 3.5 12(1) 12(1) 12(1)

100 100 400 400 100 100 100

200 75 100 100 250(1) 250(1) 250(1)

100 100 400 400 100 100 100

7.0 5.0 5.0 5.0 7.5 7.5 7.5

3.0 1.0 1.0 1.0 2.5 2.5 2.5

— 3.0 4.0 4.0 1.5(1) 1.5(1) 1.5(1)

— 100 400 400 100 100 100

25 25 25 25 25 25 25

— 0.3 0.5 2.0 1.0 1.0 2.0

8.0 3.0 4.0 6.0 6.5 4.0 6.5

2.0 1.0 4.0 8.0 12 12 24

20 5.0 10 20 60 30 60

5 5 5 5 5 5 5

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–18

Motorola Small–Signal Transistors, FETs and Diodes Device Data

JFETs (continued)
Table 28. JFET Switches and Choppers The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID Device Ω Max mA VGS(off) Volts Min Max Min IDSS mA Max V(BR)GSS V(BR)GDO Volts Min

Ciss pF Max

Crss pF Max

ton ns Max

toff ns Max

Style

Case 29–04 — TO–226AA (TO–92) — N–Channel
J112 MPF4392 2N5639 MPF4393 2N5640 2N5555 J110
(1) Typical (16) V GS(f)

50 60 60 100 100 150 18

— — 1.0 — 1.0 — —

1.0 — — — — — 0.5

5.0 — (8.0)(1) (12)(1) (6.0)(1) 1.0(16) 4.0

5.0 25 25 5.0 5.0 15 10

— 75 — 30 — — —

35 30 30 30 30 25 25

28 10 10 10 10 5.0 —

5.0 3.5 4.0 3.5 4.0 1.2 —

— 15 — 15 18 10 —

— 35 — 55 45 25 —

5 5 5 5 5 5 5

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–19

®

TMOS FETs
1 2 3

CASE 29–05 TO–226AE 1–WATT (TO–92) D CASE 29–04 TO–226AA (TO–92)

1

2 3

G S

Table 29. TMOS Switches and Choppers The following is a listing of small–signal TMOS devices that are intended for switching and chopper applications. These devices offer low RDS(on) characteristics.
RDS(on) @ ID Device Ω Max A VGS(th) Volts Min Max

V(BR)DSS Volts Min

Ciss pF Max

Crss pF Max

ton ns Max

toff ns Max

Style

Case 29–05 — TO–226AE (1–WATT TO–92) — N–Channel
MPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM
1.4 1.7 1.8 2.0 3.0 4.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 1.0 1.0 0.8 1.0 0.8 0.8 0.3 0.8 3.5 3.5 2.0 3.5 2.0 2.0 2.5 2.5 35 60 35 90 60 90 60 60 70(1) 70(1) 30(1) 70(1) 30(1) 30(1) — 60 20(1) 20(1) 4(1) 20(1) 4(1) 4(1) — 5.0 15 15 5.0 15 5.0 5.0 — 10 15 15 5.0 15 5.0 5.0 — 10 22 22 22 22 22 22 22 22

Case 29–04 — TO–226AA (TO–92) — N–Channel
VN0300L 2N7000 BS170 VN0610LL VN2406L BS107A 2N7008 VN2222LL VN2410L BS107
(1) Typical

1.2 5.0 5.0 5.0 6.0 6.4 7.5 7.5 10 14

1.0 0.5 0.2 0.5 0.5 0.25 0.5 0.5 0.5 0.2

0.8 0.8 0.8 0.8 0.8 1.0 1.0 0.6 0.8 1.0

2.5 3.0 3.0 2.5 2.0 3.0 2.5 2.5 2.0 3.0

60 60 60 60 240 200 60 60 240 200

100 60 25(1) 60 125 60(1) 50 60 125 60(1)

25 5.0 3.0(1) 5.0 20 6.0(1) 5.0 5.0 20 6.0(1)

30 10 10 10 8.0 15 20 10 8.0 15

30 10 10 10 23 15 20 10 23 15

22 22 30 22 22 30 22 22 22 30

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–20

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Surface Mount FETs
This section contains the FET plastic packages available for surface mount applications. Most of these devices are the most popular metal–can and insertion type parts carried over to the new surface mount packages.
1 2

3

CASE 318–08 TO–236AB SOT–23 6 5

CASE 419–02 SC–70/SOT–323 4

4

1

3 CASE 419B–01 SOT–363

2

1 CASE 318E–04 SOT–223 2 3

Table 30. Surface Mount RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1–Drain, 2–Source, 3–Gate
NF Device Marking dB Typ f MHz mmhos Min Yfs @ VDS mmhos Max Volts V(BR)GSS Style

Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1
6U 6T M6C M6A M6B 1.5 1.5 1.5 2(3) 2.0 450 450 450 100 100 10 8.0 10 4.5 3.0 20 18 18 7.5 6.0 10 10 10 15 15 25 25 25 30 25 10 10 10 10 10

Case 419B–01 — SOT–363— Dual N–Channel
MBF4416DW1T1
(3) Max

M6

2.0

100

4.5

7.5

15

30

7

Table 31. Surface Mount General–Purpose JFETs The following table is a listing of surface mount small–signal general purpose FETs. These devices are intended for small–signal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and general–purpose, low–voltage switches. Pinout: 1–Drain, 2–Source, 3–Gate
Yfs @ VDS Device Marking V(BR)GSS mmhos Min mmhos Max Volts mA Min IDSS mA Max Style

Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF5457LT1
6D 25 1.0 5.0 15 1.0 5.0 10

Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBF5460LT1
M6E 40 1.0 4.0 15 1.0 5.0 10

Case 419B–01 — SOT–363 — Dual N–Channel
MBF5457DW1T1
(3) Max

6D

25

1.0

5.0

15

1.0

5.0

7

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–21

Surface Mount FETs (continued)
Table 32. Surface Mount Choppers/Switches JFETs The following is a listing of small–signal surface mount JFET devices intended for switching and chopper applications. Pinout: 1–Drain, 2–Source, 3–Gate
RDS(on) Ohms Max toff ns Max VGS(off) V(BR)GSS 30 30 30 Volts Min Volts Max mA Min IDSS mA Max Style

Device

Marking

Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
6J 6K 6G 30 60 100 20 35 50 –4.0 –2.0 –0.5 –10 –5.0 –3.0 50 25 5.0 150 75 30 10 10 10

Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBFJ175LT1 MMBFJ177LT1
6W 6Y 125 300 — — 30 30 3.0 0.8 6.0 2.5 7.0 1.5 60 20 10 10

Table 33. TMOS FETs The following is a listing of small–signal surface mount TMOS FETs which exhibit low RDS(on) characteristics. Pinout: 1–Gate, 2–Source, 3–Drain
RDS(on) @ ID Device Marking Ohm mA VDSS 60 100 50 60 20 20 30 VGS(th) Volts Min Volts Max Switching Time ton ns 10 20 20 20 2.5 2.5 2.5 toff ns 10 40 20 20 15 16 16 Style

Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF170LT1 BSS123LT1 BSS138LT1 2N7002LT1 MMBF0201NLT1 MGSF1N02LT1 MGSF1N03LT1 6Z SA J1 702 N1 N2 N3 5.0 6.0 3.5 7.5 1.0 0.085 0.09 200 100 200 500 300 1200 1200 0.8 0.8 0.5 1.0 1.0 1.0 1.0 3.0 2.8 1.5 2.5 2.4 2.4 2.4 21 21 21 21 21 21 21

Case 318–08 — TO–236 (SOT–23) — P–Channel
BSS84LT1 MMBF0202PLT1 MGSF1P02LT1 MGSF1P02ELT1
PD P3 PC PE 6.0 1.4 0.35 0.16 100 200 1500 1500 50 20 20 20 1.0 1.0 1.0 0.7 2.4 2.0 2.4 1.2 2.5 2.5 2.5 2.5 16 16 16 15 21 21 21 21

Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
RDS(on) Device Marking Ohm mA VDSS 60 90 240 200 VGS(th) Volts Min Volts Max Switching Time ton ns 15 5.0 — 15 toff ns 15 5.0 — 15 Style

Case 318E–04— SOT–223 — N–Channel
MMFT960T1 MMFT6661T1 MMFT2406T1 MMFT107T1
FT960 T6661 T2406 FT107 1.7 4.0 10 14 1000 1000 200 200 1.0 0.8 0.8 1.0 3.5 2.0 2.0 3.0 3 3 3 3

Case 419–02 — SC–70/SOT–323 — N–Channel
MMBF2201NT1
N1 1.0 300 20 1.0 2.4 2.5 15 8

Case 419–02 — SC–70/SOT–323 — P–Channel
MMBF2202PT1
P3 2.2 200 20 1.0 2.4 2.5 16 8

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–22

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Tuning and Switching Diodes
Tuning Diodes — Abrupt Junction
Motorola supplies voltage–variable capacitance diodes serving the entire range of frequencies from HF through UHF. Used in RF receivers and transmitters, they have a variety of applications, including: • Phase–locked loop tuning systems • Local oscillator tuning • Tuned RF preselectors • RF filters • RF phase shifters • RF amplifiers • Automatic frequency control • Video filters and delay lines • Harmonic generators • FM modulators Two families of devices are available: Abrupt Junction and Hyper Abrupt Junction. The Abrupt Junction family includes devices suitable for virtually all tuned–circuit and narrow–range tuning applications throughout the spectrum.
CASE 29–04 TO–226AA (TO–92) 1 23 2 CASE 51–02 DO–204AA (DO–7) 1 STYLE 1 1 2 STYLE 15 2 3

1

CASE 182–02 TO–226AC (TO–92) 1 2
3

2 Cathode STYLE 1

1 Anode

1 2

CASE 318–08 TO–236AB SOT–23

3 Cathode STYLE 8

1 Anode

3 1 1 CASE 463–01 SOT–416/SC–90 2 3 2 STYLE 9

Typical Characteristics
Diode Capacitance versus Reverse Voltage
100 70 C T , DIODE CAPACITANCE (pF) 50 30 20 10 7 5 3 2 0.6 1 2 4 6 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 1 0.1 TA = 25°C f = 1 MHz C T , DIODE CAPACITANCE (pF) 1N5148 1000

MV1638 100

1N5456A MV1650

(See Tables 34 Thru 36) 10 MV1628

1 10 VR, REVERSE VOLTAGE (VOLTS)

100

1000 C T , DIODE CAPACITANCE (pF) MV2115 C T , DIODE CAPACITANCE (pF) MV2109 MMBV2109LT1 100

100 70

40

MMBV432LT1 MV104

10 MV2101 MMBV2101LT1 1 0.1 MV2105 MMBV2105LT1 100

20

TA = 25°C f = 1 MHz EACH DIODE 0.5 1 2 3 5 10 VR, REVERSE VOLTAGE (VOLTS) 20 30

1 10 VR, REVERSE VOLTAGE (VOLTS)

10 0.3

(See Tables 37 and 38)

(See Table 39)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–23

Tuning Diodes — Abrupt Junction (continued)
Table 34. General–Purpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 4.0 Volts/60 Volts The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device(19) pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C4/C60 Min Q 4.0 V, 50 MHz Min

Case 51–02 — DO–204AA (DO–7)
1N5148 42.3 47 51.7 60 3.2 200

Table 35. General–Purpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit very high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device(20) pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Min

Case 51–02 — DO–204AA (DO–7)
1N5446ARL 1N5448ARL 1N5456A
(19)Suffix A = 10.0% (20)Suffix B = 5.0%

16.2 19.8 90

18 22 100

19.8 24.2 110

30 30 30

2.6 2.6 2.7

350 350 175

Table 36. General–Purpose Glass Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/20 Volts The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C2/C20 Min Q 4.0 V, 50 MHz Typ

Case 51–02 — DO–204AA (DO–7)
MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 10.8 13.5 16.2 19.8 29.7 73.8 90 12 15 18 22 33 82 100 13.2 16.5 19.8 24.2 36.3 90.2 110 20 20 20 20 20 20 20 2.0 2.0 2.0 2.0 2.0 2.0 2.0 300 250 250 250 200 150 150

Table 37. General–Purpose Plastic Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of plastic package, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C4/C30 Min Q 4.0 V, 50 MHz Typ

Case 182–02 — TO–226AC (TO–92) — 2–Lead
MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
6.1 10.8 13.5 24.3 29.7 42.3 90 6.8 12 15 27 33 47 100 7.5 13.2 16.5 29.7 36.3 51.7 110 30 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 2.6 400 350 350 250 200 150 100

Selector Guide 1–24

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Tuning Diodes — Abrupt Junction (continued)
Table 38. Surface Mount Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of surface mount abrupt junction tuning diodes intended for general–purpose variable capacitance circuit applications.
CT @ VR = 4.0 V, 1.0 MHz pF Device Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Typ

Case 318–08 — DO–236AB (SOT–23)
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
6.1 9.0 13.5 19.8 24.3 29.7 6.8 10 15 22 27 33 7.5 11 16.5 24.2 29.7 36.3 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 400 350 350 300 250 200

Table 39. Abrupt Tuning Diodes for FM Radio — Dual The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22) Device pF Min pF Max Volts Cap Ratio C3/C30 Min Q 3.0 V, 50 MHz Min

V(BR)R Volts

Device Marking

Style

Case 29–04 — TO–226AA (TO–92)
MV104
37 42 3.0 2.5 100 32 — 15

Case 318–08 — TO–236AB (SOT–23)
MMBV432LT1
(21)C2/C8 (22)Each Diode

43

48.1

2.0

1.5(21)

100

14

M4B

9

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–25

Tuning Diodes — Hyper–Abrupt Junction
The Hyper–Abrupt family exhibits higher capacitance, and a much larger capacitance ratio. It is particularly well suited for wider–range applications such as AM/FM radio and TV tuning.
1

2 CASE 51–02 DO–204AA (DO–7) 1 Cathode STYLE 1 2 Anode

1 2

CASE 182–02 TO–226AC (TO–92)

2 Anode STYLE 1

1 Cathode

3 1 2

CASE 318–08 TO–236AB SOT–23

3 Cathode STYLE 8

1 Anode

4 1 2 3 CASE 318E–04 SOT–223 1 STYLE 2 2, 4

Typical Characteristics
Diode Capacitance versus Reverse Voltage
20 18 C T , DIODE CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 TA = 25°C f = 1 MHz MMBV105GLT1 C T , CAPACITANCE (pF) 40 36 32 28 24 20 16 12 8 4 0.3 0.5 1 2 3 5 10 20 30 0 1 3 10 30 100 MMBV109LT1 MV209

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Diode Capacitance

Figure 2. Diode Capacitance

Selector Guide 1–26

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Tuning Diodes — Hyper–Abrupt Junction (continued)
40 C T , DIODE CAPACITANCE (pF) 32 24 16 8 0 1 3 10 20 VR, REVERSE VOLTAGE (VOLTS) MMBV409LT1 MV409 C T , DIODE CAPACITANCE (pF) 10 9 8 7 6 5 4 3 2 1 0 MMBV809LT1

0.5 1

2

3 4 5 8 10 15 VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Diode Capacitance

Figure 4. Diode Capacitance

40 C T , DIODE CAPACITANCE (pF) C T , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 8 4 0 0.3 TA = 25°C f = 1 MHz MMBV3102LT1

50 40 f = 1 MHz 30 20 10 MMBV609LT1

0.5

1

2

3

5

10

20

30

0

1

2

3

5

7

10

20

30

40

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Diode Capacitance

Figure 6. Diode Capacitance Each Die

MV7005T1
1000 C T , DIODE CAPACITANCE (pF) 500 C T , CAPACITANCE (pF) 500 300 200 100 50 30 20 10 1 MV1405 MV1403 MV1404 2 MV7404T1 3 4 5 6 7 8 9 10 TA = 25°C f = 1 MHz

100 50

10

1

3

5

7

9

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance versus Reverse Voltage

Figure 8. Diode Capacitance versus Reverse Voltage

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–27

Tuning Diodes — Hyper–Abrupt Junction (continued)
Table 40. Hyper–Abrupt Tuning Diodes for Telecommunications — Single The following is a listing of hyper–abrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig

Case 182–02 — TO–226AC (TO–92)
MV209 MV409
26 26 32 32 3.0 3.0 5.0 1.5 6.5 2.0 3/25 3/8 200 200 — — 30 20 — — 1 1 2 3

Case 318–08 — TO–236AB (SOT–23)
MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 MMBV3102LT1
1.5 26 26 4.5 20 2.8 32 32 6.1 25 25 3.0 3.0 2.0 3.0 4.0 5.0 1.5 1.8 4.5 6.5 6.5 1.9 2.6 — 3/25 3/25 3/8 2/8 3/25 200 200 200 300 200 — — — — — 30 30 20 20 30 M4E M4A X5 5K M4C 8 8 8 8 8 1 2 3 4 5

Case 419–02 — SC–70/SOT–323
MBV109T1
26 32 3.0 5.0 6.5 3/25 200 — 30 M4A 8 —

Table 41. Hyper–Abrupt Tuning Diodes for Communications — Dual
CT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig

Case 318–08 — TO–236AB (SOT–23)
MMBV609LT1
26 32 3.0 1.8 2.4 3/8 250 — 20 5L 9 6

Table 42. Hyper–Abrupt High Capacitance Voltage Variable Diode — Surface Mount The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring large tuning capacitance.
CT @ f = 1.0 MHz Device V(BR)R Volts IR nA Min pF Max pF Cap Ratio Min Q Min Style CV Curve Figure

Case 318E–04— SOT–223 Pinout: 1–Anode, 2, 4–Cathode, 3–NC
MV7005T1 MV7404T1
15 12 100 100 400 96 520 144 12(26) 10(27) 150(28) 200(29) 2 2 8 11

Table 43. Hyper–Abrupt High Capacitance Tuning Diodes — Axial Lead Glass Package
CT @ VR Device pF Min pF Max Volts Cap Ratio C2/C10 Min Q 2.0 V, 1.0 MHz Min V(BR)R Volts CV Curve Figure

Style

Case 51–02 — DO–204AA (DO–7)
MV1404 MV1403 MV1405
(26) V = 1.0 V/V = 9.0 V R R (27) V = 2.0 V/V = 10 V R R (28) V = 1.0 V, f = 1.0 MHz R (29) V = 2.0 V, f = 1.0 MHz R

96 140 200

144 210 300

2.0 2.0 2.0

10 10 10

200 200 200

12 12 12

1 1 1

11 11 11

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–28

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Schottky Diodes
Schottky diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency applications. They provide stable electrical characteristics by eliminating the point–contact diode presently used in many applications.
1 2

CASE 182–02 TO–226AC (TO–92) STYLE 1 2 Cathode 1 Anode 1 Cathode

CASE 425–04 SOD–123 STYLE 1 2 Anode

CASE 419–02 SC–70/SOT–323 1 Single
3 1 2

6

5

4

CASE 419B–01, STYLE 6 SOT–363

3

1

2

3

CASE 318–08 TO–236AB SOT–23 STYLE 9 STYLE 11 21 Series 2 3

STYLE 8 1 Single 3 1

3 Common Cathode STYLE 12 Anode 3 Cathode 1 2 Cathode 1

STYLE 19 2 Series 3

Typical Characteristics
Capacitance versus Reverse Voltage
1 MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* TA = 25°C C T , CAPACITANCE (pF) 2.8 2.4 2 1.6 1.2 0.8 0.4 0.6 0 0 1 2 3 * EACH DIODE 4 0 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) MBD701, MMBD701LT1 MBD301, MMBD301LT1 TA = 25°C

C T , CAPACITANCE (pF)

0.9

0.8

0.7

(See Table 44)

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–29

Schottky Diodes (continued)
Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
V(BR)R Volts CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking

Device

Style

Case 182–02 — TO–226AC (TO–92)
MBD701 MBD301 MBD101 BAS40LT1 BAS40–04LT1 BAS70LT1 BAT54ALT1 BAT54LT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 BAS40–06LT1 BAS70–04LT1(23) MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD452LT1
70 30 7.0 40 40 70 30 30 30 70 30 7.0 40 70 7.0 7.0 7.0 7.0 30 30 70 30 4 30 30 70 30 7.0 20 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 5.0 @ 1.0 V 2.0 @ 0 V 10 @ 1.0 V 10 @ 1.0 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 2.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.5 @ 1.5 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 10 @ 1.0 V 1.5 @ 15 V 1.0 @ 20 V 10 @ 1.0 V 1.0 @ 0 V 2.5 @ 1.0 V 1.0 0.6 0.6 0.5 @ 30 mA 0.5 @ 30 mA 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.5 @ 30 mA 0.75 0.6 0.6 0.6 0.6 0.6 0.4 1.2 0.6 0.6 0.4 0.6 1.0 0.4 0.6 0.37 @ 1 mA 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 1000 @ 25 V 100 @ 50 V 2000 @ 25 V 2000 @ 25 V 2000 @ 25 V 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 100 @ 50 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 200 @ 25 V 2000 @ 25 V 0.2 @ 35 V 0.2 @ 25 V 0.25 @ 3 V 2000 @ 25 V 0.2 @ 25 V 0.2 @ 35 V 2000 @ 25 V 250 @ 3.0 V 0.2 @ 10 V 15 15 — — — — — — — 15 15 15 — — 15 15 15 15 15 — 15 15 15 — — — — — — — — — B1 — BE — LV3 LD3 5H 4T 4M — — M5G M4F M6H MJ1 5N — 5H 4T 4M — 4T 5H — M5 B3 1 1 1 8 12 8 12 8 11 8 8 8 11 12 11 19 9 12 11 1 1 1 1 2 2 2 9 9 2

Case 318–08 — TO–236AB (SOT–23) – Single

Case 318–08 — TO–236AB (SOT–23) – Dual

Case 425–04 — (SOD–123)
BAT54T1 MMSD701T1 MMSD301T1 MMSD101T1 BAT54WT1 MMBD330T1 MMBD770T1 BAT54SWT1 MMBD352WT1 MMBD717LT1(23)
(23) Common Anode

Case 419–02 — (SC–70/SOT–323) – Single

Case 419–02 — (SC–70/SOT–323) – Dual

Case 419B–01 — SOT–363 – Duals
V(BR)R Device Marking BL M4 T4 H5 Min Volts 30 7.0 30 70 @ IBR (µA) 10 10 10 10 Max (µA) 2.0 200 200 200 IR @ VR Volts 25 25 25 25 Min Volts — — — — VF Max Volts 0.32 0.6 0.4 0.5 @ IF (mA) 1.0 1.0 1.0 1.0 ) (30) CT( Max (pF) 1.0 1.0 1.5 1.0 trr Max (ns) 5.0 — — — Case Style 6 6 6 6

MBD54DWT1 MBD110DWT1 MBD330DWT1 MBD770DWT1
(30) V = 0 V, f = 1.0 MHz R

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–30

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Diodes
Small–signal switching diodes are intended for low current switching and steering applications. Hot–Carrier, PIN and general–purpose diodes allow a wide selection for specific application requirements.
1 CASE 29–04 TO–226AA (TO–92) 2 3 STYLE 3 1 2 CASE 182–02 TO–226AC (TO–92)

Typical Characteristics
Capacitance versus Reverse Voltage
10 C T , DIODE CAPACITANCE (pF)

1 3 TA = 25°C f = 1 MHz STYLE 4 1 3

2 STYLE 1 2 Cathode 2 1 Anode

2

MPN3404 1
1

3

0.5 0.3 0.2 0 0

MMBV3401LT1 20 V MAX VR 12 18 24 30 36

MPN3700 MMBV3700LT1 42 48 54 1

2

CASE 318–08 TO–236AB SOT–23 STYLE 12 3 1 3 COMMON ANODE 2

STYLE 8

VR, REVERSE VOLTAGE (VOLTS)

SINGLE

(See Table 45)
STYLE 1 1 Cathode CASE 425–04 SOD–123 2 Anode 1 3 COMMON CATHODE STYLE 11 3 ANODE 3 2 CATHODE 3 1 3 SERIES 2 1 STYLE 9 2

STYLE 18 2 SINGLE 3

STYLE 19 2 3 SERIES

1

CASE 463–01 SOT–416/SC–90 1 CATHODE STYLE 4 2 1 ANODE STYLE 5 2 CASE 318D–04 SC–59

3 2 1 STYLE 2 STYLE 4 3 SINGLE 2 STYLE 4 2 1 3 COMMON ANODE 2 1 3 COMMON CATHODE STYLE 3 2 1 3 COMMON ANODE STYLE 5 2 2 SINGLE 3

STYLE 2 1 SINGLE STYLE 5 1 3 COMMON CATHODE 3

3 CASE 419–02 SC–70/SOT–323 1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–31

Switching Diodes (continued)
Table 45. PIN Switching Diodes The following PIN diodes are designed for VHF band switching and general–purpose low current switching applications.
V(BR)R Volts Min CT @ VR @ 1.0 MHz pF Max Volts IR @ VR µA Max Series Resistance Ohm Max

Device

Device Marking

Style

Case 182–02 — TO–226AC (TO–92)
MPN3700 MPN3404 200 20 1.0 2.0 20 15 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.85 @ 10 mA — — 1 1

Case 318–08 — TO–236AB (SOT–23)
MMBV3700LT1 MMBV3401LT1 200 35 1.0 1.0 20 20 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.7 @ 10 mA 4R 4D 8 8

Table 46. General–Purpose Signal and Switching Diodes — Single The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.
V(BR)R Device Marking Min Volts @ IBR (µA) Max (µA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 318–08 — TO–236AB (SOT–23)
BAS21LT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1
JS 5D A6 5A JF 250 100 75 70 70 100 100 100 100 100 0.1 5.0 1.0 0.1 2.5 200 75 75 50 70 — — — 0.85 — 1.0 1.0 1.0 1.1 1.0 100 10 50 100 50 5.0 4.0 2.0 2.5 1.5 50 4.0 6.0 4.0 6.0 8 8 8 8 18

Case 318D–04 — SC–59
M1MA151AT1 M1MA151KT1
MA MH 40 40 100 100 0.1 0.1 35 35 — — 1.2 1.2 100 100 2.0 2.0 3.0 3.0 4 2

Case 419–02 — SC–70/SOT–323
BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1
A6 MH MI J6 75 40 80 100 1.0 100 100 100 0.02 0.1 0.1 5.0 20 35 75 75 — — — — 1.25 1.2 1.2 1.0 150 100 100 10 2.0 2.0 2.0 4.0 6.0 3.0 3.0 4.0 2 2 2 2

Case 425–04— SOD–123
MMSD914T1 MMSD71RKT1
5D 6S 100 — 100 — 5.0 0.5 75 80 — — 1.0 1.2 10 100 4.0 2.0 4.0 4.0 1 1

(30) V = 0 V, f = 1.0 MHz R

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–32

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Diodes (continued)
Table 47. General–Purpose Signal and Switching Diodes — Dual The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.
V(BR)R Device Marking Min Volts @ IBR (µA) Max (µA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 318–08 — TO–236AB (SOT–23)
MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1
M5C A2 A6 A4 A7 A1 5BM JA A3 A5 100 75 75 70 70 70 70 50 35 35 100 100 100 100 100 100 100 5.0 100 100 1.0 0.1 0.1 5.0 2.5 2.5 0.1 0.1 0.1 0.1 50 50 50 70 70 70 50 50 30 30 0.75 — — — — — 0.85 — — — 1.1 1.0 1.0 1.0 1.0 1.0 1.1 1.0 1.0 1.0 100 10 10 50 50 50 100 100 10 10 1.5 4.0 4.0 1.5 1.5 2.0 2.5 2.0 4.0 4.0 4.0 4.0 4.0 6.0 4.0 6.0 4.0 4.0 4.0 4.0 11 12 9 9 11 12 9 9 12 9

Case 318D–04 — SC–59
M1MA151WAT1 M1MA151WKT1
MN MT 40 40 100 100 0.1 0.1 35 35 — — 1.2 1.2 100 100 15 2.0 10 3.0 5 3

Case 419–02 — SC–70/SOT–323
M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1
MU MO A1 A4 A7 F7 MT MN 80 80 70 70 70 70 40 40 100 100 100 100 100 100 100 100 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 75 75 70 70 70 70 35 35 — — — — — — — — 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 100 100 50 50 50 50 100 100 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.0 10 6.0 6.0 6.0 6.0 3.0 10 5 4 4 5 9 10 5 4

Case 463–01 — SOT–416/SC–90 (Common Anode)
DAP222
P9 80 100 100 70 — 1.2 100 3.5 4.0 4

Case 463–01 — SOT–416/SC–90 (Common Cathode)
DAN222
N9 80 100 100 70 — 1.2 100 3.5 4.0 5

Table 48. Low–Leakage Medium Speed Switching Diodes — Single
V(BR)R Device Marking Min Volts @ IBR (µA) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 318–08 — TO–236AB (SOT–23)
BAS116LT1 MMBD1000LT1
JV AY 75 30 100 100 5.0 0.5 75 30 — — 1.0 0.95 10 10 2.0 2.0 3000 3000 8 6

Case 419–02 — (SOT–323)/(SC–70)
MMBD2000T1
DH 30 100 0.5 30 — 0.95 10 2.0 3000 2

Case 318D–04 — (SC–59)
MMBD3000T1
XP 30 100 0.5 30 — 0.95 10 2.0 3000 2

Case 425–04 — (SOD–123)
MMSD1000T1
4K 30 100 0.5 30 — 0.95 10 2.0 3000 1

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–33

Switching Diodes (continued)
Table 49. Low–Leakage Medium Speed Switching Diodes — Dual
V(BR)R Device Marking Min Volts @ IBR (µA) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

Case 318–08 — TO–236AB (SOT–23)
BAV170LT1 BAV199LT1 BAW156LT1 MMBD1005LT1 MMBD1010LT1
JX JY JZ A3 A5 70 70 70 30 30 100 100 100 100 100 5.0 5.0 5.0 0.5 0.5 70 70 70 30 30 — — — — — 1.0 1.0 1.0 0.95 0.95 10 10 10 10 10 2.0 2.0 2.0 2.0 2.0 3000 3000 3000 3000 3000 9 11 12 12 9

Case 419–02 — (SOT–323)/(SC–70) — DUAL
MMBD2005T1 MMBD2010T1
DI DP 30 30 100 100 0.5 0.5 30 30 — — 0.95 0.95 10 10 2.0 2.0 3000 3000 4 5

Case 318D–04 — (SC–59) — DUAL
MMBD3005T1 MMBD3010T1
(30) V = 0 V, f = 1.0 MHz R

XQ XS

30 30

100 100

0.5 0.5

30 30

— —

0.95 0.95

10 10

2.0 2.0

3000 3000

5 3

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–34

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Multiple Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost, higher reliability and space savings.

14 1

16 1

CASE 751A–03 SO–14 PLASTIC

CASE 751B–05 SO–16 PLASTIC

Diode Array Diagrams 1
11 3 8 12 9 10 13 14 1 4 5 6 7 2

4
8 Diode Array (Common Anode)
14 2 3 5 7 8 9 11 12 7 6 5

7
4 3 2 1

Dual 10 Diode Array

NC Pin 1, 4, 6, 10, 13

Isolated 7 Diode Array

8

9

10 11 12 13 14

2
1 1 2 14 3 5 7 8 9 11 12

5
8 2 14 3 11 12 4 5 9 10 7

16 Diode Array

Dual 8 Diode Array

NC Pin 4,6,10,13

NC Pin 6, 13

3
8 Diode Array (Common Cathode)
14 2 3 5 7 8 9 11 12 1 2 3 4

6
5 6 7 8

NC Pin 1, 4, 6, 10, 13

Isolated 8 Diode Array

16 15 14 13 12 11 12

9

Table 50. Diode Arrays Case 751A–03— SO–14
MMAD130 MMAD1103 MMAD1105 MMAD1106 MMAD1107 MMAD1109
Dual 10 Diode Array 16 Diode Array 8 Diode Common Cathode Array 8 Diode Common Anode Array Dual 8 Diode Array 7 Isolated Diode Array 1 2 3 4 5 7

Case 751B–05 — SO–16
MMAD1108
8 Isolated Diode Array 6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–35


1 2

3 2 1

3 1 2

4

3

CASE 318–08 TO–236AB SOT–23

CASE 318D–04 SC–59

CASE 318E–04 SOT–223

Plastic–Encapsulated Surface Mount Devices
Energy. It’s something Motorola is putting a lot of energy into helping save. That’s why we’re introducing our GreenLine™ portfolio of devices, featuring energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the power demands of your products. Wide Range of Applications Currently, our portfolio consists of three families. • Low–Leakage Switching Diodes: With reverse leakage specifications guaranteed to 500 pA, they help extend battery life, making them ideal for small battery–operated systems in which standby power is essential. Applications include ESD protection, reverse voltage protection, and steering logic. • Bipolar Output Driver Transistors: Offering ultra–low collector saturation voltage, they deliver more energy to the intended load with less power wasted through dissipation loss. They are especially effective in today’s lower voltage battery–powered applications, and prolong battery life in portable and hand–held communications and personal digital equipment.

6 1

5

3
4 2

2

3

1 2 CASE 419–02 SC–70/SOT–323
1

CASE 318G–02 TSOP–6

CASE 425–04 SOD–123

• Small Signal HDTMOS™: These devices provide our lowest ever drain–source resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss, making them especially effective for low–current applications where energy conservation is crucial, such as low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This makes them ideal for portable computer–type products or any system where the combination of power management and energy conservation is key. Save Energy — Save Money In an increasingly power–hungry world, Motorola’s GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products — ones that can help save energy, dollars — and the environment.

Table 51. Bipolar Driver Transistor — PNP These offer ultra–low collector saturation voltage. Pinout: 1–Base, 2–Emitter, 3–Collector
hFE@ IC Device Type Marking GLP GLP Case SOT–23 SC–59 V(BR)CEO 15 15 VCE(sat) 0.1 0.1 VBE(sat) 1.1 1.1 Min 300 300 Max 600 600 mA 100 100

MMBT1010LT1 MSD1010T1

Selector Guide 1–36

Motorola Small–Signal Transistors, FETs and Diodes Device Data

GreenLine (continued)
Table 52. Low Leakage Switching Diodes These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
V(BR)R Device Type Marking AY A3 A5 DH DI DP XP XQ XS 4K Case SOT–23 SOT–23 SOT–23 SC–70 SC–70 SC–70 SC–59 SC–59 SC–59 SOD–123 Style Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Min Volts 30 30 30 30 30 30 30 30 30 30 @ IBR (µA) 100 100 100 100 100 100 100 100 100 100 Max (nA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR @ VR Volts 30 30 30 30 30 30 30 30 30 30

MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1 MMBD3000T1 MMBD3005T1 MMBD3010T1 MMSD1000T1

Table 53. Small Signal HDTMOS™ MOSFETs These provide the lowest drain–source resistance versus package size.
RDS(on) Ω Max Device Type Marking Channel @Vgs1 (10 V) @Vgs2 (4.5 V) @Vgs3 (2.5 V) VDSS VGS(th) Volts Min Volts Max Switching Time t(on) ns t(off) ns Style

Case 318–08 — TO–236AB (SOT–23) — P–Channel and N–Channel
2N7002LT1 BSS84LT1 BSS123LT1 BSS138LT1 MMBF0201NLT1 MMBF0202PLT1 MGSF1N02LT1 MGSF1N03LT1 MGSF1P02LT1 MGSF1P02ELT1
702 PD SA J1 N1 P3 — — — — N P N N N P N N P P 7.5 — 6.0 — 1.0 1.4 0.085 0.10 3.5 0.16 — 10 — 3.5 1.4 3.5 0.125 0.145 0.5 0.21 — — — — — — — — — — 60 50 100 50 20 20 20 30 20 20 1.0 0.8 0.8 0.5 1.0 1.0 1.0 1.0 1.0 0.7 2.5 2.0 2.8 1.5 2.4 2.4 2.4 2.4 2.4 1.2 — 2.5 20 20 2.5 2.5 2.5 2.5 2.5 2.5 — 16 40 20 15 16 16 16 16 15 21 21 21 21 21 21 21 21 21 21

Case 318G–02 — TSOP–6 — P–Channel and N–Channel
MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1
— — — — — — — — P P N N N N P P — — — — 0.065 0.065 0.10 0.10 0.10 0.10 0.07 0.07 0.095 0.095 0.19 0.19 0.135 0.135 0.095 0.095 — — — — 20 20 20 20 30 30 30 30 0.45 0.45 0.6 0.6 1.0 1.0 1.0 1.0 — — — — — — — — 27 27 8.0 8.0 10 10 10 10 52 52 36 36 20 20 20 20 1 1 1 1 1 1 1 1

Case 419–02 — SC–70/SOT–323
MMBF2202PT1 MMBF2201NT1
P3 N1 P N 2.2 1.0 3.5 1.4 — — 20 20 1.0 1.0 2.4 2.4 2.5 2.5 16 15 7 7

Devices listed in bold, italic are Motorola preferred devices.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Selector Guide 1–37

Small Signal Multi–integrated Devices
1 2

6

5

3

4
1 2

3 CASE 419B–01 SOT–363 VCC (4) Vin 1.0 k Q1 R2

CASE 318–08 SOT–23 Vout (3)

R1

6.8 V (1) 33 k GND (2)

R3 Q2 VENBL (5) R5 R4 Q4 R6

Vref (6) Iout (1)

MDC3105LT1

GND (2) and (3) MDC5001T1

INTERNAL CIRCUIT DIAGRAMS Table 54. Low Voltage Bias Stabilizer A silicon SMALLBLOCK™ integrated circuit which maintains stable bias current in various discrete bipolar junction and field effect transistors.
VCC (Volts) Device Type Marking Min Max ICC µA Vref Volts ∆Vref Volts

Case 419B–01 — SOT–363
MDC5001T1
E6 1.8 10 200 2.1 ± 50

Table 55. Integrated Relay/Solenoid Driver Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts) Device Type Min Max Min Vin (Volts) Max Vsat (Volts) Iin (mA) IC(on) (mA)

Case 318–08 — SOT–23
MDC3105LT1
2.0 5.5 2.0 5.5 0.4 2.5 250

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide 1–38

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Section 2
Plastic-Encapsulated Transistors

In Brief . . .
Motorola’s plastic transistors and diodes encompass hundreds of devices spanning the gamut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for the most demanding applications. The popular TO-92, 1-Watt TO-92 and TO-116 combine proven reliability performance and economy for through-the-hole manufacturing, while the SOT-23, SC-59, SC-70/SOT-323, SC–90/SOT–416, SOT-223, and SO-16 offer the same solutions for surface mount manufacturing. As an additional service to our customers Motorola will, upon request, supply many of these devices in tape and reel for automatic insertion. Contact your Motorola representative for ordering information. This section contains both single and multiple plasticencapsulated transistors. NOTE: All SOT-23 package devices have had a “T1” suffix NOTE: added to the device title.

1

2

3

CASE 29-04 (TO-226AA) TO-92

1

2

3

CASE 29-05 (TO-226AE) 1 WATT TO-92

3 3 1 2 2 1 1 2 4

3

CASE 318-08 (TO-236AB) SOT-23

CASE 318D-04 SC-59

CASE 318E-04 (TO-261AA) SOT-223

3

3 2

1 2

1

CASE 419-02 SC-70/SOT-323

CASE 463-01 SC-90/SOT-416

16 14 1 1

CASE 646-06 (TO-116)

CASE 751B-05 SO-16
Not to Scale

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–1

EMBOSSED TAPE AND REEL
SOT-23, SC-59, SC-70/SOT-323, SC–90/SOT–416, SOT-223 and SO-16 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59, SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information). SOT-23: available in 8 mm Tape and Reel Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel. Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel. Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel. Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the “T1” suffix) to order the 7 inch/1000 unit reel. Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/4000 unit reel. available in 16 mm Tape and Reel Add an “R1” suffix to the device title to order the 7 inch/500 unit reel. Add an “R2” suffix to the device title to order the 13 inch/2500 unit reel.

SC-59:

SC-70/ SOT-323:

SOT-223:

SO-16:

RADIAL TAPE IN FAN FOLD BOX OR REEL
TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in printed circuit boards. TO-92: available in Fan Fold Box Add an “RLR” suffix and the appropriate Style code* to the device title to order the Fan Fold box. available in 365 mm Radial Tape Reel Add an “RLR” suffix and the appropriate Style code* to the device title to order the Radial Tape Reel. *Refer to Section 6 on Packaging for Style code characters and additional information on ordering *requirements.

DEVICE MARKINGS/DATE CODE CHARACTERS
SOT-23, SC-59, SC-70/SOT-323, and the SC–90/SOT–416 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.

ABC D
The “D” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.

2–2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon

2N3903 2N3904*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–3

2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) — — VBE(sat) 0.65 — 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 — — — — 150 300 — — — — Vdc —

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF — — 6.0 5.0 50 100 1.0 200 400 40 0.1 0.5 5.0 8.0 — fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10– 4 250 300 — — — — 4.0 8.0 pF pF kΩ MHz

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = 0.5 Vdc, ( IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf — — — — — 35 35 175 200 50 ns ns ns ns

v 300 ms; Duty Cycle v 2.0%.

2–4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V′ < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–5

2N3903 2N3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time
500 300 200 ts ′ , STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

t′s = ts – 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA

SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA

IC = 0.5 mA IC = 50 mA

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9.

Figure 10.

2–6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50

h fe , CURRENT GAIN

200

20 10 5

100 70 50

2 1

30

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain
20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

2.0 1.0 0.5

h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 5.0 10

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1.0 V

h FE, DC CURRENT GAIN (NORMALIZED)

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–7

2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C)

1.0 0.5 +25°C TO +125°C

qVC FOR VCE(sat)
0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

0

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

Figure 18. Temperature Coefficients

2–8

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N3905 2N3906*
*Motorola Preferred Device

1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 250 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW Watts mW/°C °C

2

3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 40 5.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–9

2N3905 2N3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) — — VBE(sat) 0.65 — 0.85 0.95 0.25 0.4 Vdc 30 60 40 80 50 100 30 60 15 30 — — — — 150 300 — — — — Vdc —

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 hoe 2N3905 2N3906 NF 2N3905 2N3906 — — 5.0 4.0 1.0 3.0 40 60 dB 50 100 200 400 0.1 0.1 5.0 10 — fT 2N3905 2N3906 Cobo Cibo hie 0.5 2.0 8.0 12 X 10– 4 200 250 — — — — 4.5 10.0 pF pF kΩ MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time 3 0 Vdc, Vdc IC = 10 mAdc (VCC = 3.0 mAdc, IB1 = IB2 = 1.0 mAd (VCC = 3.0 Vdc, VBE = 0.5 Vdc, ( IC = 10 mAdc, IB1 = 1.0 mAdc) 2N3905 2N3906 2N3905 2N3906 td tr ts tf — — — — — — 35 35 200 225 60 75 ns ns ns

Fall Time

ns

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

2–10

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3905 2N3906
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 CS < 4 pF* 10 k < 1 ns 275 3V

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10

QT QA

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)

20 30 40

1.0

2.0 3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200

Figure 4. Charge Data

VCC = 40 V IB1 = IB2 IC/IB = 20

t f , FALL TIME (ns)

100 70 50 30 20 10 7 5 IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time

Figure 6. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–11

2N3905 2N3906
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA

NF, NOISE FIGURE (dB)

4.0

3.0

2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100

1.0

0 0.1

0.1

0.2

0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS)

40

100

Figure 7.

Figure 8.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20

h fe , DC CURRENT GAIN

200

100 70 50

10 7

30

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

5

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0

Figure 10. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

2–12

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3905 2N3906
TYPICAL STATIC CHARACTERISTICS
2.0

h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C +25°C – 55°C

VCE = 1.0 V

1.0 0.7 0.5 0.3 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 14. Collector Saturation Region
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 – 0.5 +25°C TO +125°C – 1.0 – 1.5 – 2.0 – 55°C TO +25°C

q V , TEMPERATURE COEFFICIENTS (mV/ °C)

qVC FOR VCE(sat)

+25°C TO +125°C – 55°C TO +25°C

0.6

0.4 VCE(sat) @ IC/IB = 10

0.2

qVB FOR VBE(sat)

0

1.0

2.0

50 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100

200

0

20

40

60 80 100 120 140 IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 15. “ON” Voltages

Figure 16. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–13

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N4123 2N4124

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 30 40 5.0 200 625 5.0 1.5 12 – 55 to +150 2N4124 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 — — — — — 50 50 Vdc nAdc nAdc 30 25 — — Vdc Vdc

2–14

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4123 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 50 120 25 60 — — 150 360 — — 0.3 0.95 Vdc Vdc —

(IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector–Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) Current Gain — High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 — — 6.0 5.0 2.5 3.0 50 120 — — 200 480 dB fT 2N4123 2N4124 Cibo Ccb hfe 50 120 200 480 — 250 300 — — — — 8.0 4.0 pF pF — MHz

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns)

200 100 70 50 30 20 tf tr td ts

3.0 2.0

Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS)

20 30 40

5.0

Figure 1. Capacitance

Figure 2. Switching Times

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–15

2N4123 2N4124
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 kΩ IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA IC = 50 mA IC = 100 mA

SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100

0.2

0.4

1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ)

40

100

Figure 3. Frequency Variations

Figure 4. Source Resistance

h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5

hfe , CURRENT GAIN

200

100 70 50

2 1

30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 5. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 hie , INPUT IMPEDANCE (kΩ ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0

Figure 6. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 7. Input Impedance

Figure 8. Voltage Feedback Ratio

2–16

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4123 2N4124
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1 V

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 9. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 10. Collector Saturation Region

TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.2

1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 55°C to +25°C +25°C to +125°C +25°C to +125°C

qVC for VCE(sat)
– 55°C to +25°C

qVB for VBE(sat)

0

20

40

60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)

180 200

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–17

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N4125

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 30 4.0 200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

REV 2

2–18

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 25 VCE(sat) — VBE(sat) — 0.95 0.4 Vdc 150 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Current Gain — High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. fT 200 Cibo — Ccb — hfe 50 |hfe| 2.0 NF — 5.0 — dB 200 — 4.5 — 10 pF — pF MHz

10 7.0

200 100 ts td tr tf

CAPACITANCE (pF)

5.0

Cobo Cibo TIME (ns)

70 50 30 20

3.0 2.0

10.0 7.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 REVERSE BIAS (VOLTS) 10 20 30 50 5.0 1.0

VCC = 3.0 V IC/IB = 10 VBE(off) = 0.5 V 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200

Figure 1. Capacitance

Figure 2. Switching Times

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–19

2N4125
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = – 5.0 Vdc, TA = 25°C Bandwidth = 1.0 Hz
5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = –1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = – 0.5 mA SOURCE RESISTANCE = 2 kΩ IC = – 50 mA 12 f = 1 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 0 0.1 IC = 50 mA IC = 100 mA IC = 1 mA

3.0

2.0 SOURCE RESISTANCE = 2 kΩ IC = –100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100

1.0

0 0.1

0.2

0.4

1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ)

40

100

Figure 3. Frequency Variations

Figure 4. Source Resistance

h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25°C
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 70 50 30 20

200 hfe , CURRENT GAIN

100 70 50

10 7.0 5.0 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10

30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 h ie , INPUT IMPEDANCE (k Ω ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0

Figure 6. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 7. Input Impedance

Figure 8. Voltage Feedback Ratio

2–20

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4125
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C +25°C – 55°C

VCE = 1 V

1.0 0.7 0.5 0.3 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 9. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 10. Collector Saturation Region

TJ = 25°C 0.8 V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.0

1.0 0.5 0 –0.5 +25°C to +125°C –1.0 –1.5 –2.0

qVC for VCE(sat)

+25°C to +125°C – 55°C to +25°C

0.6

0.4

qVS for VBE(sat)

0.2

– 55°C to +25°C

VCE(sat) @ IC/IB = 10

0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200

0

20

40

60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)

180 200

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–21

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N4264

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 15 30 6.0 200 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) (VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C) Collector Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) V(BR)CEO 15 V(BR)CBO 30 V(BR)EBO 6.0 IBEV — — ICEX — 100 0.1 10 nAdc — µAdc — Vdc — Vdc Vdc

REV 2

2–22

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4264
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C) (IC = 30 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)(1) (IC = 200 mAdc, VCE = 1.0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) hFE 25 40 20 40 30 20 VCE(sat) — — VBE(sat) 0.65 0.75 0.8 0.95 0.22 0.35 Vdc — 160 — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0) fT Cibo Cobo 300 — — — 8.0 4.0 MHz pF pF

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn–On Time Turn–Off Time Storage Time Total Control Charge ( CC = 10 Vdc, VEB(off) = 2.0 Vdc, (V IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C) VCC = 10 Vdc, (IC = 10 mAdc, for ts) (IC = 100 mA for tf) (IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C) (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A) (VCC = 10 Vdc, IC = 10 mA, IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B) (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc) (Fig. 3, Test Condition A) td tr ts tf ton toff ts QT — — — — — — — — 8.0 15 20 15 25 35 20 80 ns ns ns ns ns ns ns pC

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Figure 1. Switching Time Equivalent Test Circuit
Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS Ω RC CS(max) VBE(off) Ω pF 4 4 12 V –1.5 — –2.0 V1 V — V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns

3300 270 560 960 560 96

10.55 –4.15 10.70 –4.65 6.55 6.35 –4.65 6.55

V3 0 V2

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–23

2N4264
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C –15°C – 55°C 20 2N4264 VCE = 1 V

30

10 1.0

2.0

3.0

5.0

7.0

10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

Figure 2. Minimum Current Gain

270 Ω t1 +10 V ∆V 0 PULSE WIDTH (t1) = 5 µs 3V 8 pF CS < 4 pF <1 ns 9.2 kΩ DUTY CYCLE = 2% C COPT TIME C < COPT C=0

Figure 3. QT Test Circuit NOTE 1
When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or “stored” in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector–base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor “on” to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE

Figure 4. Turn–Off Waveform

If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn–off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn–off waveform. Given QT from Figure 13, the external C for worst–case turn–off in any circuit is: C = QT/∆V, where ∆V is defined in Figure 3.

2–24

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4264
“ON” CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) 2N4264 TJ = 25°C IC = 10 mA 0.6 50 mA 100 mA 200 mA

0.8

0.4

0.2

0

0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 IB, BASE CURRENT (mA)

5.0

7.0

10

20

30

50

Figure 5. Collector Saturation Region

Vsat , SATURATION VOLTAGE (VOLTS)

1.0 0.8 0.6 0.4 0.2 0

IC/IB = 10 TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.2 MAX VBE(sat) MIN VBE(sat)

1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 (25°C to 125°C)

qVC for VCE(sat)

(25°C to 125°C) (– 55°C to 25°C)

MAX VCE(sat)

qVB for VBE

(– 55°C to 25°C)

1.0

2.0 3.0

50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

200

0

40

80 120 160 IC, COLLECTOR CURRENT (mA)

200

Figure 6. Saturation Voltage Limits

Figure 7. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–25

2N4264
DYNAMIC CHARACTERISTICS
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25°C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25°C TJ = 125°C

2V

Figure 8. Delay Time

Figure 9. Rise Time

50 TJ = 25°C TJ = 125°C t f , FALL TIME (ns) IC/IB = 10

200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25°C TJ = 125°C

t s , STORAGE TIME (ns)

30 20

IC/IB = 20

10 7.0 5.0 ts′

^ ts – 1/8 tf
IB1 = IB2

Figure 10. Storage Time

Figure 11. Fall Time

10 MAX TYP 7.0 CAPACITANCE (pF) Cibo Q, CHARGE (pC)

1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25°C TJ = 125°C

5.0

3.0

Cobo

2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10

20

Figure 12. Junction Capacitance

Figure 13. Maximum Charge Data

2–26

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon

2N4400 2N4401*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 — — — — — 0.1 0.1 Vdc Vdc Vdc µAdc µAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–27

2N4400 2N4401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 20 20 40 40 80 50 100 20 40 — — 0.75 — — — — — — 150 300 — — 0.4 0.75 0.95 1.2 Vdc Vdc —

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 2N4401 hoe 2N4400 2N4401 hre hfe 20 40 1.0 250 500 30 µmhos fT 2N4400 2N4401 Ccb Ceb hie 0.5 1.0 0.1 7.5 15 8.0 X 10–4 — 200 250 — — — — 6.5 30 pF pF k ohms MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( CC = 30 Vdc, VBE = 2.0 Vdc, (V IC = 150 mAdc, IB1 = 15 mAdc) ( CC = 30 Vdc, IC = 150 mAdc, (V IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 15 20 225 30 ns ns ns ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ < 2.0 ns 200 Ω +16 V 0 CS* < 10 pF –14 V < 20 ns 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ + 30 V 200 Ω

CS* < 10 pF

– 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

2–28

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4400 2N4401
TRANSIENT CHARACTERISTICS
25°C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT

VCC = 30 V IC/IB = 10

QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10

100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Rise and Fall Times

300 200 t s′, STORAGE TIME (ns) ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)

100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2

100 70 50

10 7.0

30

5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–29

2N4400 2N4401
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA

8.0 NF, NOISE FIGURE (dB)

6.0

6.0

4.0

4.0

2.0 0 0.01 0.02 0.05 0.1 0.2

2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

Figure 10. Source Resistance Effects

h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from both the 2N4400 and 2N4401 lines, and the hfe and other “h” parameters for this series of transistors. To same units were used to develop the correspondingly numobtain these curves, a high–gain and a low–gain unit were bered curves on each graph.
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

20 k 10 k 5.0 k

100 70 50 30 20 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

2.0 k 1.0 k 500

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain
10 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50

Figure 12. Input Impedance

2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

20 10 5.0 2.0 1.0 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio 2–30

Figure 14. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4400 2N4401
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C 25°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 15. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C

0.8

0.6

IC = 1.0 mA

10 mA

100 mA

500 mA

0.4

0.2

0 0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0 7.0

10

20

30

50

Figure 16. Collector Saturation Region

1.0 TJ = 25°C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C)

+ 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE @ VCE = 10 V

0.4

0.2

VCE(sat) @ IC/IB = 10

qVB for VBE
0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

Figure 17. “On” Voltages

Figure 18. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–31

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon

2N4402 2N4403*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 — — — — — 0.1 0.1 Vdc Vdc Vdc µAdc µAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

2–32

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4402 2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) — — VBE(sat) 0.75 — 0.95 1.3 0.4 0.75 Vdc 30 30 60 50 100 50 100 20 — — — — — 150 300 — Vdc —

(IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 2N4403 hoe 2N4402 2N4403 hre hfe 30 60 1.0 250 500 100 µmhos fT 2N4402 2N4403 Ccb Ceb hie 750 1.5 k 0.1 7.5 k 15 k 8.0 X 10–4 — 150 200 — — — — 8.5 30 pF pF ohms MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( CC = 30 Vdc, VBE = + 2.0 Vdc, (V IC = 150 mAdc, IB1 = 15 mAdc) ( CC = 30 Vdc, IC = 150 mAdc, (V IB1 = 15 mA, IB2 = 15 mA) td tr ts tf — — — — 15 20 225 30 ns ns ns ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V < 2 ns +2 V 0 – 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 –16 V < 20 ns 1.0 kΩ 1.0 to 100 µs, DUTY CYCLE = 2% – 30 V 200 Ω

CS* < 10 pF

+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. Turn–Off Time 2–33

2N4402 2N4403
TRANSIENT CHARACTERISTICS
25°C 30 20 CAPACITANCE (pF) 100°C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb

VCC = 30 V IC/IB = 10

QT QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10

100 70 50 30 20 VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Rise Time

200 IC/IB = 10 t s′, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 IC/IB = 20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

2–34

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4402 2N4403
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ NF, NOISE FIGURE (dB) 8

6

6

4

4

IC = 50 µA 100 µA 500 µA 1.0 mA

2

RS = OPTIMUM SOURCE RESISTANCE

2

0 0.01 0.02 0.05 0.1 0.2

0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

Figure 9. Source Resistance Effects

h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from both the 2N4402 and 2N4403 lines, and the hfe and other “h” parameters for this series of transistors. To same units were used to develop the correspondingly– obtain these curves, a high–gain and a low–gain unit were numbered curves on each graph.
1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2

100 70 50

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500

Figure 11. Input Impedance

100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 13. Output Admittance 2–35

2N4402 2N4403
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 14. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.8

0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA

0.2

0 0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region

1.0 0.8 VOLTAGE (VOLTS)

TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C)

0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE(sat) @ VCE = 10 V

0.4

0.2

qVS for VBE
0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

Figure 16. “On” Voltages

Figure 17. Temperature Coefficients

2–36

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N4410

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO — — IEBO — 0.01 1.0 0.1 µAdc 80 120 120 5.0 — — — — Vdc Vdc Vdc Vdc µAdc

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–37

2N4410
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 60 60 VCE(sat) VBE(sat) VBE(on) — — — — 400 0.2 0.8 0.8 Vdc Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) 2. fT = |hfe| • ftest. 500 300 200 h FE, DC CURRENT GAIN 100 – 55°C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V fT Ccb Ceb 60 — — 300 12 50 MHz pF pF

0.2

0.3

0.5

0.7

1.0

3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)

10

20

30

50

70

100

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA

Figure 2. Collector Saturation Region

2–38

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N4410
101 VCE = 30 V IC, COLLECTOR CURRENT ( µA) 100 10–1 10–2 10–3 10–4 10–5 0.4 TJ = 125°C 75°C REVERSE 25°C FORWARD

IC = ICES

0.3

0.2 0 0.1 0.2 0.3 0.4 0.1 VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.5

0.6

Figure 3. Collector Cut–Off Region

1.0

θV, TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C

2.5 2.0 1.5 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = – 55°C to +135°C

0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6

qVC for VCE(sat)

0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100

qVB for VBE(sat)

Figure 4. “On” Voltages

Figure 5. Temperature Coefficients

100 70 50 10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF C, CAPACITANCE (pF) VBB – 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo

TJ = 25°C

Cobo

Values Shown are for IC @ 10 mA

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–39

2N4410
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25°C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25°C

1.0

20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

50

100

200

20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

100

200

Figure 8. Turn–On Time

Figure 9. Turn–Off Time

2–40

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N5087
Motorola Preferred Device

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO 50 50 — — — — 50 50 Vdc Vdc nAdc nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces 2N5086/D)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–41

2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 VCE(sat) VBE(on) — — 800 — — 0.3 0.85 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. fT Ccb hfe 250 NF — — 2.0 2.0 900 dB 40 — — 4.0 MHz pF —

2–42

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

2 2 1ń2 S ) In RS + 20 log10 en2 ) 4KTR 4KTRS

ƪ

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–43

2N5087
TYPICAL STATIC CHARACTERISTICS
400 TJ = 125°C 25°C

h FE, DC CURRENT GAIN

200

– 55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 6. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TA = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

2–44

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 11. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 12. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Current–Gain — Bandwidth Product

Figure 14. Capacitance

20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hoe, OUTPUT ADMITTANCE (m mhos) VCE = –10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C

Figure 15. Input Impedance

Figure 16. Output Admittance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–45

2N5087
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 17. Thermal Response

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25°C TA = 25°C dc TJ = 150°C

1.0 ms 100 µs dc

10 µs

1.0 s

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 18. Active–Region Safe Operating Area

104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 – 40 – 20 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19. Typical Collector Leakage Current

2–46

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N5088 2N5089

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5088 30 35 3.0 50 625 5.0 1.5 12 – 55 to +150 2N5089 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. RθJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO — — 50 100 — — 50 50 nAdc 35 30 — — nAdc 30 25 — — Vdc Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–47

2N5088 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 — — 900 1200 — — — — 0.5 0.8 Vdc Vdc —

(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(2) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2N5088 2N5089 NF 2N5088 2N5089 — — 3.0 2.0 fT Ccb Ceb hfe 350 450 1400 1800 dB 50 — — — 4.0 10 MHz pF pF —

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–48

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz

10 7.0 5.0

300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

100 kHz 5.0 10

Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB)

Figure 3. Effects of Collector Current

BANDWIDTH = 1.0 Hz IC = 10 mA

BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA

8.0

500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB)

Figure 5. Wideband Noise Figure

IC = 10 mA

3.0 mA 1.0 mA 300 µA

12

8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–49

2N5088 2N5089
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C

0.02

0.03

0.05

0.1

0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA)

1.0

2.0

3.0

5.0

10

Figure 8. DC Current Gain

1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C

– 0.4 – 0.8

0.6

VBE @ VCE = 5.0 V

– 1.2 TJ = 25°C to 125°C

0.4

– 1.6

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

– 2.0

– 55°C to 25°C

– 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50 100

Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 10. Temperature Coefficients

8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C

500

300 200

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C

1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

Figure 11. Capacitance

Figure 12. Current–Gain — Bandwidth Product

2–50

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N5209 2N5210

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 4.0 50 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 — — — — 50 50 Vdc Vdc nAdc nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–51

2N5209 2N5210
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 — — 300 600 — — — — 0.7 0.85 Vdc Vdc —

(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, f = 1.0 kHz) (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5209 2N5210 NF 2N5209 2N5210 2N5209 2N5210 — — — — 3.0 2.0 4.0 3.0 fT Ccb hfe 150 250 600 900 dB 30 — — 4.0 MHz pF —

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–52

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5209 2N5210
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz

10 7.0 5.0

300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

100 kHz 5.0 10

Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB)

Figure 3. Effects of Collector Current

BANDWIDTH = 1.0 Hz IC = 10 mA

BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA

8.0

500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB)

Figure 5. Wideband Noise Figure

IC = 10 mA

3.0 mA 1.0 mA 300 µA

12

8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–53

2N5209 2N5210
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C

0.02

0.03

0.05

0.1

0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA)

1.0

2.0

3.0

5.0

10

Figure 8. DC Current Gain

1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C

– 0.4 – 0.8

0.6

VBE @ VCE = 5.0 V

– 1.2 TJ = 25°C to 125°C

0.4

– 1.6

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

– 2.0

– 55°C to 25°C

– 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50 100

Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 10. Temperature Coefficients

8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C

500

300 200

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C

1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

Figure 11. Capacitance

Figure 12. Current–Gain — Bandwidth Product

2–54

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
PNP Silicon

2N5400 2N5401*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER
1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 120 130 5.0 600 625 5.0 1.5 12 – 55 to +150 2N5401 150 160 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO 2N5400 2N5401 2N5400 2N5401 IEBO — — — — — 100 50 100 50 50 130 160 5.0 — — — 120 150 — —

Vdc

Vdc

Vdc

nAdc µAdc nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–55

2N5400 2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 VCE(sat) — — VBE(sat) — — 1.0 1.0 0.2 0.5 Vdc 30 50 40 60 40 50 — — 180 240 — — Vdc —

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5400 2N5401 NF fT 2N5400 2N5401 Cobo hfe 30 40 — 200 200 8.0 dB 100 100 — 400 300 6.0 pF — MHz

2–56

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5400 2N5401
200 150 TJ = 125°C h FE, CURRENT GAIN 100 70 50 – 55°C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = – 1.0 V VCE = – 5.0 V 25°C

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA

Figure 2. Collector Saturation Region

103 IC, COLLECTOR CURRENT ( µA) 102 101 TJ = 125°C 100 10–1 10–2 10–3 0.3 75°C REVERSE 25°C FORWARD VCE = 30 V IC = ICES

0.2

0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.6

0.7

Figure 3. Collector Cut–Off Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–57

2N5400 2N5401
θV, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 θVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 θVC for VCE(sat) TJ = – 55°C to 135°C

Figure 4. “On” Voltages

Figure 5. Temperature Coefficients

10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout

C, CAPACITANCE (pF)

VBB + 8.8 V

VCC –30 V

100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo

TJ = 25°C

Cobo

Values Shown are for IC @ 10 mA

0.3

2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)

10

20

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20

2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V

td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50

10 0.2 0.3 0.5

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–On Time

Figure 9. Turn–Off Time

2–58

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N5550 2N5551*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 – 55 to +150 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO 2N5550 2N5551 2N5550 2N5551 IEBO — — — — — 100 50 100 50 50 160 180 6.0 — — — 140 160 — —

Vdc

Vdc

Vdc

nAdc µAdc nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–59

2N5550 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 — — — 1.0 1.2 1.0 — — — 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 — — 250 250 — — Vdc —

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5550 2N5551 2N5550 2N5551 hfe NF — — 10 8.0 fT Cobo Cibo — — 50 30 20 200 — dB 100 — 300 6.0 MHz pF pF

2–60

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5550 2N5551
500 300 200 h FE, DC CURRENT GAIN 100 – 55°C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V

0.2

0.3

0.5

0.7

1.0

3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)

10

20

30

50

70

100

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA

Figure 2. Collector Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–61

2N5550 2N5551
101 VCE = 30 V IC, COLLECTOR CURRENT ( µA) 100 10–1 10–2 10–3 10–4 10–5 0.4 TJ = 125°C 75°C REVERSE 25°C FORWARD

IC = ICES

0.3

0.2 0 0.1 0.2 0.3 0.4 0.1 VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.5

0.6

Figure 3. Collector Cut–Off Region

1.0

θV, TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C

2.5 2.0 1.5 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = – 55°C to +135°C

0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6

qVC for VCE(sat)

0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100

qVB for VBE(sat)

Figure 4. “On” Voltages

Figure 5. Temperature Coefficients

100 70 50 10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF C, CAPACITANCE (pF) VBB – 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo

TJ = 25°C

Cobo

Values Shown are for IC @ 10 mA

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

2–62

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5550 2N5551
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25°C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25°C

1.0

20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

50

100

200

20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

100

200

Figure 8. Turn–On Time

Figure 9. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–63

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2

2N6426* 2N6427
*Motorola Preferred Device

EMITTER 1

1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 12 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

2

3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 — — — — — — — — — — — — 1.0 50 50 Vdc Vdc Vdc

mAdc
nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–64

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N6426 2N6427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE 2N6426 2N6427 2N6426 2N6427 2N6426 2N6427 VCE(sat) — — VBE(sat) VBE(on) — — 0.71 0.9 1.52 1.24 1.2 1.5 2.0 1.75 Vdc Vdc 20,000 10,000 30,000 20,000 20,000 14,000 — — — — — — 200,000 100,000 300,000 200,000 200,000 140,000 Vdc —

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 500 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base – Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Current – Gain — High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Admittance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width 2N6426 2N6427 hfe 2N6426 2N6427 |hfe| 2N6426 2N6427 hoe NF 1.5 1.3 — — 2.4 2.4 — 3.0 — — 1000 10 20,000 10,000 — — — — — Cobo Cibo hie 100 50 — — 2000 1000 — — — 5.4 10 7.0 15 pF pF kΩ

mmhos
dB

v 300 ms; Duty Cycle v 2.0%.
RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–65

2N6426 2N6427
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA

IC = 1.0 mA

Figure 2. Noise Voltage

Figure 3. Noise Current

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

200

14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)

100 70 50 30 20

BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA

100 µA

1.0 mA 10

1.0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

2–66

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N6426 2N6427
SMALL–SIGNALCHARACTERISTICS
20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4

3.0

2.0 0.04

0.1

0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

0.2 0.5

1.0

2.0

0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 125°C

3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA

hFE, DC CURRENT GAIN

25°C

1.5

– 55°C VCE = 5.0 V

1.0

2.0 k 5.0 7.0

10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

0.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA)

500 1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0

– 1.0

*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)

25°C TO 125°C

– 2.0

– 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0

qVB FOR VBE
– 5.0 – 55°C TO 25°C

0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

– 6.0 5.0 7.0 10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–67

2N6426 2N6427
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 12. Thermal Response

IC, COLLECTOR CURRENT (mA)

1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C

1.0 ms 100 µs

FIGURE A tP PP PP

1.0 s

t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP

PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

2–68

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3

NPN 2N6515 2N6517 PNP 2N6519 2N6520
Voltage and current are negative for PNP transistors

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 – 55 to +150 mAdc mAdc mW mW/°C Watts mW/°C °C
1 2 3

2N6515 250 250

2N6519 300 300

2N6517 2N6520 350 350

Unit Vdc Vdc Vdc

PD

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

TJ, Tstg

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 — — 250 300 350 — — — Vdc 250 300 350 — — — Vdc Vdc

Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 )

Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–69

NPN 2N6515 2N6517 PNP 2N6519 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (Continued)
Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 — — 50 50 — — — 50 50 50 nAdc nAdc

ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) — — — — VBE(sat) — — — VBE(on) — 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 — — — — — — 300 270 200 220 200 200 — — — Vdc —

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base–Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb — — 80 100 40 — 200 6.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn–Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ton toff — — 200 3.5 µs µs

2–70

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN 2N6515
200 VCE = 10 V TJ = 125°C hFE, DC CURRENT GAIN 200 VCE = –10 V

PNP 2N6519
TJ = 125°C 25°C – 55°C

hFE, DC CURRENT GAIN

100 70

25°C

100 70 50

– 55°C 50

30 20 1.0

30 20 –1.0

2.0

3.0

5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 1. DC Current Gain

2N6517
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 30 20 – 55°C TJ = 125°C hFE , DC CURRENT GAIN 200 VCE = –10 V 100 70 50 30 20

2N6520
TJ = 125°C 25°C – 55°C

25°C

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50 70 100

10 –1.0

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 2. DC Current Gain

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

2N6515, 2N6517
100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

2N6519, 2N6520
100 70 50 TJ = 25°C VCE = – 20 V f = 20 MHz

30 20

30 20

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50 70

100

10 –1.0

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 3. Current–Gain — Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–71

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN 2N6515, 2N6517
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 VCE(sat) @ IC/IB = 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25°C –1.4 –1.2 V, VOLTAGE (VOLTS) –1.0 –0.8 –0.6 –0.4 –0.2 0 –1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V TJ = 25°C

PNP 2N6519, 2N6520

Figure 4. “On” Voltages

2N6515, 2N6517
RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 1.5 1.0 0.5 0 RθVC for VCE(sat) – 55°C to 25°C – 55°C to 125°C RθVB for VBE IC IB

2N6519, 2N6520
RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5 2.0 1.5 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 –1.0 RθVC for VCE(sat) – 55°C to 125°C – 50 – 70 –100 RθVB for VBE IC IB

2.5

+ 10
25°C to 125°C

+ 10
25°C to 125°C – 55°C to 25°C

– 0.5 – 1.0 – 1.5 – 2.0 – 2.5 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

2N6515, 2N6517
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb C, CAPACITANCE (pF) TJ = 25°C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 – 0.2

2N6519, 2N6520
Ceb TJ = 25°C

Ccb

Ccb

0.5

1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50 100 200

– 0.5 – 1.0 – 2.0 – 5.0 – 10 – 20 – 50 – 100 – 200 VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

2–72

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN 2N6515, 2N6517
1.0 k 700 500 300 200 tr 100 70 50 30 20 10 1.0 t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C 1.0 k 700 500 300 200 100 70 50 30 20 10 –1.0 tr

PNP 2N6519, 2N6520
td @ VBE(off) = 2.0 V VCE(off) = –100 V IC/IB = 5.0 TJ = 25°C

td @ VBE(off) = 2.0 V

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 7. Turn–On Time

2N6515, 2N6517
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 2.0 k ts ts 1.0 k 700 500 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 –1.0 tf

2N6519, 2N6520

VCE(off) = –100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 8. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–73

NPN 2N6515 2N6517 PNP 2N6519 2N6520
+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 –9.2 V PULSE WIDTH ≈ 100 µs tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k

+10.8 V

20 k

50 Ω SAMPLING SCOPE

APPROXIMATELY –1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

Figure 9. Switching Time Test Circuit

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 SINGLE PULSE

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

0.05

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 10. Thermal Response

500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 500 TA = 25°C TC = 25°C 100 ms 100 µs 10 µs 1.0 ms

FIGURE A tP PP PP

t1 1/f DUTY CYCLE 1 + t1 f + ttP

2.0 5.0 10 20 50 100 200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

PEAK PULSE POWER = PP

Figure 11. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

2–74

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon General Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 – 460 (typical) • Low VCE(sat), < 0.5 V • Available in 8 mm, 7–inch/3000 Unit Tape and Reel

2SA1774
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

3

MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value –60 –50 –6.0 –100 Unit Vdc Vdc Vdc mAdc
1

2

CASE 463–01, STYLE 1 SOT–416/SC–90

DEVICE MARKING
2SA1774 = F9

COLLECTOR 3

THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C 1 BASE 2 EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Base Breakdown Voltage (IC = –50 µAdc, IE = 0) Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IE = –50 µAdc, IE = 0) Collector–Base Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter–Base Cutoff Current (VEB = –5.0 Vdc, IB = 0) Collector–Emitter Saturation Voltage(2) (IC = –50 mAdc, IB = –5.0 mAdc) DC Current Gain(2) (VCE = –6.0 Vdc, IC = –1.0 mAdc) Transition Frequency (VCE = –12 Vdc, IC = –2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1 MHz) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) — hFE 120 fT — COB — 140 3.5 — — pF — 560 MHz — –0.5 — Min –60 –50 –6.0 — — Typ — — — — — Max — — — –0.5 –0.5 Unit Vdc Vdc Vdc nA µA Vdc

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–75

2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000 TA = 25°C IC, COLLECTOR CURRENT (mA) 120 DC CURRENT GAIN TA = 75°C 300 µA 250 200 150 30 0 100 IB = 50 µA 0 3 6 9 12 15 10 0.1 1 10 100 TA = – 25°C 100 TA = 25°C VCE = 10 V

90

60

VCE, COLLECTOR VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

Figure 1. IC – VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1

Figure 2. DC Current Gain

1

0.5

TA = 25°C VCE = 5 V

5

10

20

40

60

80

100

150 200

IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region
13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10

Figure 4. On Voltage

20 VCB (V)

30

40

Figure 5. Capacitance

Figure 6. Capacitance

2–76

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Information

NPN Silicon General Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High hFE, 210 – 460 (typical) • Low VCE(sat), < 0.5 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc

2SC4617
NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

3 2 1

CASE 463–01, STYLE 1 SOT–416/SC–90

DEVICE MARKING
2SC4617 = B9

COLLECTOR 3

THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 125 150 – 55 ~ + 150 Unit mW °C °C 1 BASE 2 EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector-Base Breakdown Voltage (IC = 50 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 50 µAdc, IE = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage(2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain(2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) — hFE 120 fT COB — — — 180 2.0 560 — — MHz pF — 0.4 — Min 50 50 5.0 — — Typ — — — — — Max — — — 0.5 0.5 Unit Vdc Vdc Vdc µA µA Vdc

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–77

2SC4617
TYPICAL ELECTRICAL CHARACTERISTICS
60 TA = 25°C IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 160 µA 140 µA DC CURRENT GAIN 120 µA 100 µA 80 µA 60 µA 40 µA IB = 20 µA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 8 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = 75°C TA = – 25°C 100 1000 TA = 25°C VCE = 10 V

Figure 1. IC – VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1

Figure 2. DC Current Gain

1

0.5

TA = 25°C VCE = 5 V

5

10

20

40

60

80

100

150 200

IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region
20 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 1

Figure 4. On Voltage

Cib, INPUT CAPACITANCE (pF)

18

16

14

12

10

0

1

2 VEB (V)

3

4

0

10

20 VCB (V)

30

40

Figure 5. Capacitance

Figure 6. Capacitance

2–78

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC182,A,B BC183 BC184

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC182 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.0 – 55 to +150 BC184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO — — — — 0.2 0.2 0.2 — 15 15 15 15 nA 60 45 45 6.0 — — — — — — — — V nA 50 30 30 — — — — — — V V

Collector – Base Breakdown Voltage (IC = 10 mA, IE = 0)

Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) Emitter–Base Leakage Current (VEB = 4.0 V, IC = 0)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–79

BC182,A,B BC183 BC184

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 VCE(sat) — — VBE(sat) VBE(on) — 0.55 — 0.5 0.62 0.83 — 0.7 — — 0.07 0.2 — 0.25 0.6 1.2 V V 40 40 100 120 120 250 80 80 130 — — — — — — — — — — — — 500 800 800 — — — V —

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

Collector – Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) Base–Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC182 BC183 BC184 BC182 BC183 BC184 Cob Cib hfe BC182 BC183 BC184 BC182A BC182B NF 125 125 240 125 240 — — — — — 500 900 900 260 500 dB — — — 150 150 150 — — 100 120 140 200 240 280 — 8.0 — — — — — — 5.0 — pF pF — MHz

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)

BC184 BC182 BC183 BC184

— — — —

2.0 2.0 2.0 2.0

4.0 10 10 4.0

1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

2–80

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC182,A,B BC183 BC184

2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF)

10 7.0 5.0 Cib TA = 25°C

100 80 60 40 30 20 0.5 0.7 1.0

VCE = 10 V TA = 25°C

3.0 Cob 2.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

1.0 0.4

0.6 0.8 1.0

2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

r b, BASE SPREADING RESISTANCE (OHMS)

170 160

150 VCE = 10 V f = 1.0 kHz TA = 25°C

140

130

120 0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)

5.0

10

Figure 5. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–81

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BC212,B BC213 BC214

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC212 –50 –60 BC213 –30 –45 –5.0 –100 350 2.8 1.0 8.0 – 55 to +150 BC214 –30 –45 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector–Emitter Leakage Current (VCB = –30 V) Emitter–Base Leakage Current (VEB = –4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min –50 –30 –30 –60 –45 –45 –5 –5 –5 — — — — — — Typ — — — — — — — — — — — — — — — Max — — — — — — — — — –15 –15 –15 –15 –15 –15 Unit Vdc

V(BR)CBO

Vdc

V(BR)EBO

Vdc

ICBO

nAdc

IEBO

nAdc

2–82

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC212,B BC213 BC214

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE BC212 BC213 BC214 BC212 BC213 BC214 BC212, BC214 BC213 VCE(sat) — — VBE(sat) VBE(on) — –0.6 –0.10 –0.25 –1.0 –0.62 — –0.6 –1.4 –0.72 Vdc Vdc 40 40 100 60 80 140 — — — — — — — — 120 140 — — — — — 600 — — Vdc —

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

(IC = –100 mAdc, VCE = –5.0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc)(1) Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC212 BC214 BC213 Cob NF BC214 BC212, BC213 hfe BC212 BC213 BC214 BC212B 60 80 140 200 — — — — — — — 400 — — — — 2 10 — — — — — 280 320 360 — — — — 6.0 pF dB MHz

Common–Base Output Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ , f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)

1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–83

BC212,B BC213 BC214

2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS)

–1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V

0.3 0.2 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc)

0 –0.1 –0.2

Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) –50 VCE = –10 V TA = 25°C

10 Cib 7.0 5.0 TA = 25°C

3.0 Cob 2.0

1.0 –0.4 –0.6

–1.0

–2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS)

–20 –30 –40

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

0.5 0.3

VCE = –10 V f = 1.0 kHz TA = 25°C

r b′, BASE SPREADING RESISTANCE (OHMS)

1.0 hob, OUTPUT ADMITTANCE (OHMS)

150 140

130

VCE = –10 V f = 1.0 kHz TA = 25°C

0.1 0.05 0.03

120

110

0.01 –0.1

–0.2

–0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc)

–5.0

–10

100 –0.1

–0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc)

–5.0

–10

Figure 5. Output Admittance

Figure 6. Base Spreading Resistance

2–84

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC237,A,B,C BC238B,C BC239,C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 — — — — — — 15 15 15 4.0 4.0 4.0 µA V

V(BR)EBO

V

ICES nA

(VCE = 50 V, VBE = 0) (VCE = 30 V, VBE = 0) TA = 125°C (VCE = 50 V, VBE = 0) TA = 125°C

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–85

BC237,A,B,C BC238B,C BC239,C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC237A BC237B/238B BC237C/238C/239C BC237 BC239 BC237A BC237B/238B BC237C/238C/239C BC237A BC237B/238B BC237C/238C/239C VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 VBE(sat) — — VBE(on) — 0.55 — 0.5 0.62 0.83 — 0.7 — 0.6 — 0.83 1.05 V — — 0.07 0.2 0.2 0.6 0.8 V — — — 120 120 120 200 380 — — — 90 150 270 — — 170 290 500 120 180 300 — — — 800 800 220 460 800 — — — V —

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

Collector – Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base–Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC237 BC238 BC239 BC237 BC238 BC239 Cobo Cibo NF BC239 — (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, ∆f = 200 Hz) BC237 BC238 BC239 — — — 2.0 2.0 2.0 2.0 4.0 10 10 4.0 — — — 150 150 150 — — 100 120 140 200 240 280 — 8.0 — — — — — — 4.5 — pF pF dB MHz

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Collector–Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz)

2–86

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC237,A,B,C BC238B,C BC239,C

2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF)

10 7.0 5.0 Cib TA = 25°C

100 80 60 40 30 20 0.5 0.7 1.0

VCE = 10 V TA = 25°C

3.0 Cob 2.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

1.0 0.4

0.6 0.8 1.0

2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

r b, BASE SPREADING RESISTANCE (OHMS)

170 160

150 VCE = 10 V f = 1.0 kHz TA = 25°C

140

130

120 0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)

5.0

10

Figure 5. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–87

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC307 BC307B BC307C BC308C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC307, B, C –45 –50 –5.0 –100 350 2.8 1.0 8.0 – 55 to +150 BC308C –25 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C (VCES = –30 V, VBE = 0) TA = 125°C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C V(BR)CEO V(BR)EBO ICES — — — — –0.2 –0.2 –0.2 –0.2 –15 –15 –4.0 –4.0 nAdc µA –45 –25 –5.0 –5.0 — — — — — — — — Vdc Vdc

REV 1

2–88

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC307 BC307B BC307C BC308C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE BC307B BC307C/308C BC307 BC307B/308B BC307C/308C BC307B BC307C/308C VCE(sat) — — — VBE(sat) — — VBE(on) –0.55 –0.7 –1.0 –0.62 — — –0.7 Vdc –0.10 –0.30 –0.25 –0.3 –0.6 — Vdc — — 120 200 420 — — 150 270 — 290 500 180 300 — — 800 460 800 — — Vdc —

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

(IC = –100 mAdc, VCE = –5.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Common Base Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) fT BC307,B,C BC308C Ccbo NF BC307,B,C — 2.0 10 — — — 280 320 — — — 6.0 pF dB MHz

BC308C

2.0

10

1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–89

BC307 BC307B BC307C BC308C
TYPICAL CHARACTERISTICS
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V

0.3

Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) –50 VCE = –10 V TA = 25°C

10 Cib 7.0 5.0 TA = 25°C

3.0 Cob 2.0

1.0 –0.4 –0.6

–1.0

–2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS)

–20 –30 –40

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

0.5 0.3

VCE = –10 V f = 1.0 kHz TA = 25°C

r b′, BASE SPREADING RESISTANCE (OHMS)

1.0 hob, OUTPUT ADMITTANCE (OHMS)

150 140

130

VCE = –10 V f = 1.0 kHz TA = 25°C

0.1 0.05 0.03

120

110

0.01 –0.1

–0.2

–0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc)

–5.0

–10

100 –0.1

–0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc)

–5.0

–10

Figure 5. Output Admittance

Figure 6. Base Spreading Resistance

2–90

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC327,-16,-25 BC328,-16,-25

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC327 –45 –50 –5.0 –800 625 5.0 1.5 12 – 55 to +150 BC328 –25 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA, IB = 0) Collector – Emitter Breakdown Voltage (IC = –100 µA, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mA, IC = 0) Collector Cutoff Current (VCB = –30 V, IE = 0) (VCB = –20 V, IE = 0) Collector Cutoff Current (VCE = –45 V, VBE = 0) (VCE = –25 V, VBE = 0) Emitter Cutoff Current (VEB = –4.0 V, IC = 0) BC327 BC328 ICES BC327 BC328 IEBO — — — — — — –100 –100 –100 nAdc V(BR)CEO BC327 BC328 V(BR)CES BC327 BC328 V(BR)EBO ICBO — — — — –100 –100 nAdc –50 –30 –5.0 — — — — — — Vdc nAdc –45 –25 — — — — Vdc Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–91

BC327,-16,-25 BC328,-16,-25

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –100 mA, VCE = –1.0 V) hFE BC327/BC328 BC327–16/BC328–16 BC327–25/BC328–25 VBE(on) VCE(sat) 100 100 160 40 — — — — — — — — 630 250 400 — –1.2 –0.7 Vdc Vdc —

(IC = –300 mA, VCE = –1.0 V) Base–Emitter On Voltage (IC = –300 mA, VCE = –1.0 V) Collector – Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA)

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) Cob fT — — 11 260 — — pF MHz

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001

D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 10 20 50 100

0.002

0.005

0.01

Figure 1. Thermal Response

–1000 IC, COLLECTOR CURRENT (mA)

1.0 s

1.0 ms

TJ = 135°C hFE, DC CURRENT GAIN 100 µs

1000 VCE = –1.0 V TA = 25°C

dc TC = 25°C –100 dc TA = 25°C

100

–10 –1.0

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) –3.0 –10 –30 VCE, COLLECTOR–EMITTER VOLTAGE

–100

10 –0.1

–1.0 –10 –100 IC, COLLECTOR CURRENT (mA)

–1000

Figure 2. Active Region — Safe Operating Area

Figure 3. DC Current Gain

2–92

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC327,-16,-25 BC328,-16,-25

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 IC = –500 mA V, VOLTAGE (VOLTS)

–1.0 TA = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –1.0 V –0.6

–0.6

–0.4 IC = –300 mA –0.2 0 –0.01 IC = –10 mA –0.1 –1.0 –10 IB, BASE CURRENT (mA) –100 IC = –100 mA

–0.4

–0.2 VCE(sat) @ IC/IB = 10 0 –1.0 –10 –100 IC, COLLECTOR CURRENT (mA) –1000

Figure 4. Saturation Region

Figure 5. “On” Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+1.0 θVC for VCE(sat) 0

100

C, CAPACITANCE (pF)

Cib 10

–1.0

–2.0

θVB for VBE

Cob

–1.0

–10 –100 IC, COLLECTOR CURRENT

–1000

1.0 –0.1

–1.0 –10 VR, REVERSE VOLTAGE (VOLTS)

–100

Figure 6. Temperature Coefficients

Figure 7. Capacitances

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–93

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC337,-16,-25,-40 BC338,-16,-25,-40

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC337 45 50 5.0 800 625 5.0 1.5 12 – 55 to +150 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 µA, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC337 BC338 ICES BC337 BC338 IEBO — — — — — — 100 100 100 nAdc V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 V(BR)EBO ICBO — — — — 100 100 nAdc 50 30 5.0 — — — — — — Vdc nAdc 45 25 — — — — Vdc Vdc

2–94

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC337,-16,-25,-40 BC338,-16,-25,-40

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337/BC338 BC337–16/BC338–16 BC337–25/BC338–25 BC337–40/BC338–40 VBE(on) VCE(sat) 100 100 160 250 60 — — — — — — — — — 630 250 400 630 — 1.2 0.7 Vdc Vdc —

(IC = 300 mA, VCE = 1.0 V) Base–Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector – Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT — — 15 210 — — pF MHz

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001

D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 10 20 50 100

0.002

0.005

0.01

Figure 1. Thermal Response

1000 IC, COLLECTOR CURRENT (mA)

1.0 s

1.0 ms

TJ = 135°C 100 µs

1000 VCE = 1 V TJ = 25°C

dc TC = 25°C 100 dc TA = 25°C

hFE, DC CURRENT GAIN 100

100

10 1.0

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR–EMITTER VOLTAGE

10 0.1

1.0 10 100 IC, COLLECTOR CURRENT (AMP)

1000

Figure 2. Active Region — Safe Operating Area

Figure 3. DC Current Gain

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–95

BC337,-16,-25,-40 BC338,-16,-25,-40

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS)

1.0 TA = 25°C 0.8 VBE(on) @ VCE = 1 V 0.6 VBE(sat) @ IC/IB = 10

0.6 IC = 10 mA 100 mA 300 mA 500 mA

0.4

0.4

0.2 0 0.01

0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000

Figure 4. Saturation Region

Figure 5. “On” Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+1 θVC for VCE(sat) 0 C, CAPACITANCE (pF)

100

Cib 10

–1

–2

θVB for VBE

Cob

1

10 100 IC, COLLECTOR CURRENT (mA)

1000

1 0.1

1 10 VR, REVERSE VOLTAGE (VOLTS)

100

Figure 6. Temperature Coefficients

Figure 7. Capacitances

2–96

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE

COLLECTOR 2

PNP 1 EMITTER

NPN BC368 PNP BC369
Voltage and current are negative for PNP transistors

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg Value 20 25 5.0 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 14 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µA, IE = 0 ) Emitter – Base Breakdown Voltage (IE = 100 µA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — IEBO — — — — 10 1.0 10 20 25 5.0 — — — — — — Vdc Vdc Vdc

µAdc mAdc µAdc

ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) hFE 50 85 60 fT VCE(sat) VBE(on) 65 — — — — — — — — — 375 — — 0.5 1.0 MHz V V —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–97

NPN BC368 PNP BC369
200 VCE , COLLECTOR VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8

hFE, CURRENT GAIN

100 70 50 VCE = 1.0 V TJ = 25°C

0.6 50 mA 0.4 100 mA 1000 mA 0.2 500 mA 250 mA 20 50 100

20 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 1000

IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 VBE(sat) @ IC/IB = 10 θ VB , TEMPERATURE COEFFICIENT (mV/ °C)

–0.8

–1.2

–1.6 θVB for VBE

0.4

–2.0

0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)

–2.4

–2.8 1.0 2.0

5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 4. Temperature Coefficient

300 200 C, CAPACITANCE (pF)

160

TJ = 25°C

120

100 70 50 VCE = 10 V TJ = 25°C f = 20 MHz 10 20 50 100 200 500 1000

80 Cibo 40 Cobo 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0

30

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Current–Gain — Bandwidth Product

Figure 6. Capacitance

2–98

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2

BC372 BC373

1 2

EMITTER 1

3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 1.0 625 5.0 1.5 12 –55 to +150 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO — — — — — — 100 100 100 nAdc 100 80 12 — — — — — — Vdc nAdc 100 80 — — — — Vdc Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–99

BC372 BC373
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) Base – Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) hFE 8.0 10 VCE(sat) VBE(sat) — — — — 1.0 1.4 — 160 1.1 2.0 Vdc Vdc K

DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob NF 100 — — 200 10 2.0 — 25 — MHz pF dB

100 K VCE = 5 V TA = 125°C hFE, DC CURRENT GAIN 25°C 10 K –55°C

1.6 VBE(sat) @ IC/IB = 100 1.4 1.2 VOLTAGE (V) 1 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 100 VBE(on) @ VCE = 5 V

1K 1 10 100 IC, COLLECTOR CURRENT (mA) 1000

0 5 10 100 IC, COLLECTOR CURRENT (mA) 500

Figure 1. DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

1000 VCE = 5 V TJ = 25°C C, CAPACITANCE (pF)

100

Cib Cob

100

10

10 0.6 1

10 100 IC, COLLECTOR CURRENT (mA)

600

1 0.1

10 VR, REVERSE VOLTAGE (VOLTS)

100

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

2–100

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
High Current Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC489,A,B

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 0.5 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc

ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B 40 60 100 160 15 — — 160 260 — — 400 250 400 — —

(IC = 1.0 Adc, VCE = 5.0 Vdc)* 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–101

BC489,A,B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS* (Continued)
Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VCE(sat) — — VBE(sat) — — 0.85 0.9 1.2 — 0.2 0.3 0.5 — Vdc Vdc

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob Cib — — — 200 7.0 50 — — — MHz pF pF

TURN–ON TIME 5.0 µs +10 V 0 tr = 3.0 ns Vin 5.0 µF –1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin

TURN–OFF TIME +VBB 100 RB 5.0 µF 5.0 µs tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT

*CS < 6.0 pF

*CS < 6.0 pF

Figure 1. Switching Time Test Circuits

2–102

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC489,A,B

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

300 200 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF)

80 60 40 Cibo

TJ = 25°C

100 70 50

20

10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

30 2.0

3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

4.0 0.1

Figure 2. Current–Gain — Bandwidth Product

Figure 3. Capacitance

1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10

ts

tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

10 5.0 7.0

Figure 4. Switching Time

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0

D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE

P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k

2.0

5.0

10

Figure 5. Thermal Response

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–103

BC489,A,B

IC, COLLECTOR CURRENT (mA)

1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C 1.0 s TC = 25°C

100 µs 1.0 ms

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 70 100

Figure 6. Active Region — Safe Operating Area

400 TJ =125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500

VCE = 1.0 V

Figure 7. DC Current Gain

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 50 IC = 10 mA mA 100 mA 250 mA 500 mA

0.6

0.4

0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500

0.2

0 0.05

0.1

0.2

0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA)

20

50

Figure 8. “On” Voltages

Figure 9. Collector Saturation Region

2–104

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC489,A,B

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

–0.8 –1.2 V, VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.4

–1.6 RθVB for VBE

–2.0

–2.4

–0.2 VCE(sat) @ IC/IB = 10

–2.8 0.5

1.0

2.0

5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)

200

500

0 –0.5

–1.0

–2.0

–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)

–500

Figure 10. Base–Emitter Temperature Coefficient

Figure 11. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 25°C –0.8

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

–1.0

–0.8

–1.2

–0.6

–1.6 RθVB for VBE

–0.4 IC = –10 mA –0.2 –50 mA –100 mA –250 mA –500 mA

–2.0

–2.4

0 –0.05 –0.1 –0.2

–0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA)

–10

–20

–50

–2.8 –0.5

–1.0

–2.0

–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)

–500

Figure 12. Collector Saturation Region

Figure 13. Base–Emitter Temperature Coefficient

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–105

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
High Current Transistors

PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC490,A

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –80 –80 –4.0 –0.5 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO –80 –80 –4.0 — — — — — — — — –100 Vdc Vdc Vdc nAdc

ON CHARACTERISTICS*
DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, VCE = –5.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. hFE BC490 BC490A 40 60 100 15 — — 140 — — 400 250 — —

2–106

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC490,A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Min Max Unit

ON CHARACTERISTICS(1) (Continued)
Collector – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) Base – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) — — VBE(sat) — — –0.9 –1.0 –1.2 — –0.25 –0.5 –0.5 — Vdc Vdc

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib — — — 150 9.0 110 — — — MHz pF pF

TURN–ON TIME 5.0 µs +10 V 0 tr = 3.0 ns Vin 5.0 µF –1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin

TURN–OFF TIME +VBB 100 RB 5.0 µF 5.0 µs tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT

*CS < 6.0 pF

*CS < 6.0 pF

Figure 1. Switching Time Test Circuits

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–107

BC490,A

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

200 VCE = –2.0 V TJ = 25°C 100 70 50 C, CAPACITANCE (pF)

100 70 50 30 20 Cibo TJ = 25°C

10 30 7.0 20 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) –200 5.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

Cobo

–50 –100

Figure 2. Current–Gain — Bandwidth Product

Figure 3. Capacitance

1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts

td @ VBE(off) = –0.5 V VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C

tf

tr 10 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 IC, COLLECTOR CURRENT (mA)

–500

Figure 4. Switching Time

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0

D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE

P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k

2.0

5.0

10

Figure 5. Thermal Response

2–108

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC490,A

–1.0 k –700 IC, COLLECTOR CURRENT (mA) –500 –300 –200 TA = 25°C –100 –70 –50 –30 –20 –10 –1.0 TC = 25°C

100 µs

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V

1.0 s 1.0 ms

0.4

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500

Figure 6. Active Region, Safe Operating Area

Figure 7. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

1.0

–0.8 –1.2

0.6

–1.6

0.4

–2.0 RθVB for VBE –2.4

0.2

0 0.05

0.1

0.2

1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA)

20

50

–2.8 0.5

1.0

2.0

5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)

200

500

Figure 8. Collector Saturation Region

Figure 9. Base–Emitter Temperature Coefficient

400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.5

VCE = –1.0 V

–0.7

–1.0

–2.0

–3.0

–5.0

–7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA)

–50

–70

–100

–200

–300

–500

Figure 10. DC Current Gain

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–109

BC490,A

–1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8

–0.6 IC = –10 mA –0.4

–50 mA

–100 mA

–250 mA

–500 mA

–0.4

–0.2 VCE(sat) @ IC/IB = 10 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500

–0.2

0 –0.05 –0.1

–0.2

–0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA)

–10

–20

–50

Figure 11. “On” Voltages

Figure 12. Collector Saturation Region

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

–0.8 –1.2

–1.6 RθVB for VBE

–2.0

–2.4

–2.8 –0.5

–1.0

–2.0

–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)

–500

Figure 13. Base–Emitter Temperature Coefficient

2–110

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2

BC517

EMITTER 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 nAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO ICES ICBO IEBO 30 40 10 — — — — — — — — — — — — 500 100 100 Vdc Vdc Vdc nAdc nAdc nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–111

BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) 30,000 — — — — — — 1.0 1.4 — Vdc Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| • ftest fT — 200 — MHz

v 2.0%.

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–112

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA

IC = 1.0 mA

Figure 2. Noise Voltage

Figure 3. Noise Current

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

200

14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)

100 70 50 30 20

BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA

100 µA

1.0 mA 10

1.0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–113

BC517
SMALL–SIGNAL CHARACTERISTICS
20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4

3.0

2.0 0.04

0.1

0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

0.2 0.5

1.0

2.0

0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 125°C

3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA

hFE, DC CURRENT GAIN

25°C

1.5

– 55°C VCE = 5.0 V

1.0

2.0 k 5.0 7.0

10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

0.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA)

500 1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0

– 1.0

*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)

25°C TO 125°C

– 2.0

– 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0

qVB FOR VBE
– 5.0 – 55°C TO 25°C

0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

– 6.0 5.0 7.0 10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

2–114

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC517
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 12. Thermal Response

IC, COLLECTOR CURRENT (mA)

1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C

1.0 ms 100 µs

FIGURE A tP PP PP

1.0 s

t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP

PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–115

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC546 65 80 BC547 45 50 6.0 100 625 5.0 1.5 12 – 55 to +150 BC548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc) Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 — — — — — — — — — — — — — 0.2 0.2 0.2 — — — — — — — — — — 15 15 15 4.0 V

V(BR)CBO

V

V(BR)EBO

V

ICES nA

µA

REV 1

2–116

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC546, B BC547, A, B, C BC548, A, B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) — — — VBE(sat) VBE(on) 0.55 — — — 0.7 0.77 — 0.09 0.2 0.3 0.7 0.25 0.6 0.6 — V V — — — 110 110 110 110 200 420 — — — 90 150 270 — — — 180 290 520 120 180 300 — — — 450 800 800 220 450 800 — — — V —

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 — — — 2.0 2.0 2.0 10 10 10 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 dB 150 150 150 — — 300 300 300 1.7 10 — — — 4.5 — pF pF — MHz

Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, ∆f = 200 Hz)

Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–117

BC546, B BC547, A, B, C BC548, A, B, C

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10

Figure 1. Normalized DC Current Gain
2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0

Figure 2. “Saturation” and “On” Voltages

–55°C to +125°C 1.2 1.6 2.0 2.4 2.8

0.4

0

0.02

0.1 1.0 IB, BASE CURRENT (mA)

10

20

0.2

10 1.0 IC, COLLECTOR CURRENT (mA)

100

Figure 3. Collector Saturation Region

Figure 4. Base–Emitter Temperature Coefficient

BC547/BC548
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 400 300 200

3.0 Cob 2.0

100 80 60 40 30 20 0.5 0.7

VCE = 10 V TA = 25°C

1.0

0.4 0.6 0.8 1.0

2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

1.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

2–118

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC546, B BC547, A, B, C BC548, A, B, C

BC547/BC548
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.4

–1.8 θVB for VBE –2.2 –55°C to 125°C

0.8

0.4

–2.6

0

–3.0 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200

0.02

0.05

0.1

0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

5.0

10

20

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

BC546
f T, CURRENT–GAIN – BANDWIDTH PRODUCT 40 TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob

500

VCE = 5 V TA = 25°C

200 100 50

20

2.0

0.1

0.2

1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS)

50

100

1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–119

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistors

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC549B,C BC550B,C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 – 55 to +150 BC550 45 50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO — — IEBO — — — — 15 5.0 15 nAdc µAdc nAdc 30 50 5.0 — — — — — — Vdc 30 45 — — — — Vdc Vdc

2–120

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) Base–Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) Base–Emitter On Voltage (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C VCE(sat) — — — VBE(sat) VBE(on) — — 0.55 0.52 0.55 0.62 — — 0.7 — 0.075 0.3 0.25 1.1 0.25 0.6 0.6 — Vdc Vdc 100 100 200 420 150 270 290 500 — — 450 800 Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 — — 330 600 0.6 — 500 900 dB 2.5 10 — — 250 2.5 — — MHz pF —

Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%.

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–121

BC549B,C BC550B,C

2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

Figure 2. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 3. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF)

10 7.0 5.0 Cib TA = 25°C

100 80 60 40 30 20

VCE = 10 V TA = 25°C

3.0 Cob 2.0

0.5 0.7

1.0

2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

50

1.0 0.4

0.6

1.0

2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

Figure 4. Current–Gain — Bandwidth Product

Figure 5. Capacitance

r b, BASE SPREADING RESISTANCE (OHMS)

170 160

150 VCE = 10 V f = 1.0 kHz TA = 25°C

140

130

120 0.1

0.2

0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc)

5.0

10

Figure 6. Base Spreading Resistance

2–122

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC556,B BC557,A,B,C BC558B

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC556 –65 –80 BC557 –45 –50 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC558 –30 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 — — — — — — –2.0 –2.0 –2.0 — — — –100 –100 –100 –4.0 –4.0 –4.0 nA –5.0 –5.0 –5.0 — — — — — — –80 –50 –30 — — — — — — V –65 –45 –30 — — — — — — V V

Collector – Base Breakdown Voltage (IC = –100 µAdc)

Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)

Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C)

µA

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–123

BC556,B BC557,A,B,C BC558B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) — — — VBE(sat) — — VBE(on) –0.55 — –0.62 –0.7 –0.7 –0.82 –0.7 –1.0 — — V –0.075 –0.3 –0.25 –0.3 –0.6 –0.65 V — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — V —

(IC = –2.0 mAdc, VCE = –5.0 V)

(IC = –100 mAdc, VCE = –5.0 V)

Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 — — — 2.0 2.0 2.0 10 10 10 — — — — — 280 320 360 3.0 — — — 6.0 pF dB MHz

Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 V, RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz)

Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

2–124

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC556,B BC557,A,B,C BC558B

BC557/BC558

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS)

–1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10

0.3 0.2 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc)

–100 –200

0 –0.1 –0.2

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

–2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C –1.6

1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8

–1.2 IC = –10 mA IC = –50 mA IC = –20 mA IC = –200 mA IC = –100 mA

–0.8

–0.4

0

–0.02

–0.1 –1.0 IB, BASE CURRENT (mA)

–10 –20

–0.2

–10 –1.0 IC, COLLECTOR CURRENT (mA)

–100

Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

Figure 4. Base–Emitter Temperature Coefficient

10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C

400 300 200 150 100 80 60 40 30 20 –0.5 VCE = –10 V TA = 25°C

3.0 2.0

1.0 –0.4 –0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–1.0

–2.0 –3.0

–5.0

–10

–20

–30

–50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–125

BC556,B BC557,A,B,C BC558B

BC556
–1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = –5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4

–0.2 0.2 0 –0.2 VCE(sat) @ IC/IB = 10 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) –0.5 –50 –100 –200 –5.0 –10 –20 –1.0 –2.0 IC, COLLECTOR CURRENT (mA)

–0.1 –0.2

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.6 IC = –10 mA –20 mA –50 mA –100 mA –200 mA

–1.4

–1.2

–1.8

θVB for VBE

–55°C to 125°C

–0.8

–2.2

–0.4 TJ = 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA) –5.0 –10 –20

–2.6

–3.0 –0.2

–0.5 –1.0

–50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–100 –200

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib

500

VCE = –5.0 V

200 100 50

10 8.0 6.0 4.0 2.0 –0.1 –0.2 Cob

20

–0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

–50 –100

–100 –1.0 –10 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

2–126

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC556,B BC557,A,B,C BC558B

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZθJC(t) = (t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 500 1.0 k 2.0 k 5.0 k 10 k

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

SINGLE PULSE

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

Figure 13. Thermal Response

–200 1s IC, COLLECTOR CURRENT (mA) –100 –50 TA = 25°C TJ = 25°C 3 ms The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

–10 –5.0

BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V)

–2.0 –1.0

Figure 14. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–127

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low Noise Transistors
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC559B BC559C BC560C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC559x –30 –30 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC560C –45 –50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) V(BR)CEO BC559B, C BC560C V(BR)CBO BC559B, C BC560C V(BR)EBO ICBO — — IEBO — — — — –15 –5.0 –15 nAdc µAdc nAdc –30 –50 –5.0 — — — — — — Vdc –30 –45 — — — — Vdc Vdc

replaces BC559/D

2–128

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC559B BC559C BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see note 1) (IC = –100 mAdc, IB = –5.0 mAdc, see note 2) Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C VCE(sat) — — — VBE(sat) VBE(on) — — –0.55 –0.52 –0.55 –0.62 — — –0.7 — –0.075 –0.3 –0.25 –1.1 –0.25 –0.6 — — Vdc Vdc 100 100 180 380 150 270 290 500 — — 460 800 Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B BC559C/BC560C NF1 NF2 fT Ccbo hfe 240 450 — — 330 600 0.5 — 500 900 dB 2.0 10 — — 250 2.5 — — MHz pF —

Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) NOTES: 1. IB is value for which IC = –11 mA at VCE = –1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–129

BC559B BC559C BC560C
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 –0.2 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V

Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. “Saturation” and “On” Voltages

400 300 200 C, CAPACITANCE (pF)

10 7.0 5.0 Cib TA = 25°C

100 80 60 40 30 20

VCE = –10 V TA = 25°C

3.0 Cob 2.0

–0.5 –0.7 –1.0

–2.0 –5.0 –7.0 –10 –20 IC, COLLECTOR CURRENT (mAdc)

–50

1.0 –0.4 –0.6

–1.0

–2.0 –4.0 –10 VR, REVERSE VOLTAGE (VOLTS)

–20

–40

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitance

r b, BASE SPREADING RESISTANCE (OHMS)

170 160

150 VCE = –10 V f = 1.0 kHz TA = 25°C

140

130

120 –0.1

–0.2

–0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc)

–5.0

–10

Figure 5. Base Spreading Resistance

2–130

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2

BC618

EMITTER 3
1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 55 80 12 — — — — — — — — — — — — 50 50 50 Vdc Vdc Vdc nAdc nAdc nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–131

BC618
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
Collector – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) Base – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) DC Current Gain (IC = 100 µA, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) VCE(sat) VBE(sat) hFE 2000 4000 10000 4000 — — — — — — 50000 — — — — — 1.1 1.6 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) fT Cob Cib 150 — — — 4.5 5.0 — 7.0 9.0 MHz pF pF

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–132

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC618
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA

IC = 1.0 mA

Figure 2. Noise Voltage

Figure 3. Noise Current

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

200

14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)

100 70 50 30 20

BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA

100 µA

1.0 mA 10

1.0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–133

BC618
SMALL–SIGNAL CHARACTERISTICS
20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4

3.0

2.0 0.04

0.1

0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

0.2 0.5

1.0

2.0

0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 125°C

3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA

hFE, DC CURRENT GAIN

25°C

1.5

– 55°C VCE = 5.0 V

1.0

2.0 k 5.0 7.0

10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

0.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA)

500 1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0

– 1.0

*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)

25°C TO 125°C

– 2.0

– 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0

qVB FOR VBE
– 5.0 – 55°C TO 25°C

0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

– 6.0 5.0 7.0 10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

2–134

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC618
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 12. Thermal Response

IC, COLLECTOR CURRENT (mA)

1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C

1.0 ms 100 µs

FIGURE A tP PP PP

1.0 s

t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP

PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–135

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Current Transistors
NPN Silicon
COLLECTOR 2 3 BASE 1 EMITTER

BC635 BC637 BC639

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 – 55 to +150 BC639 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 14 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO — — — — 100 10 nAdc µAdc 45 60 80 5.0 — — — — — — — — Vdc 45 60 80 — — — — — — Vdc Vdc

Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0)

Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

2–136

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC635 BC637 BC639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 VCE(sat) VBE(on) 25 40 40 40 25 — — — — — — — — — — 250 160 160 — 0.5 1.0 Vdc Vdc —

(IC = 500 mA, VCE = 2.0 V) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. fT Cob Cib — — — 200 7.0 50 — — — MHz pF pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–137

BC635 BC637 BC639
1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25°C PD TC 25°C BC635 BC637 BC639 100 PD TC 25°C PD TA 25°C SOA = 1S hFE, DC CURRENT GAIN 200 500 VCE = 2 V

100

50

2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20

1

3

5

10 30 50 100 IC, COLLECTOR CURRENT (mA)

300 500

1000

Figure 1. Active Region Safe Operating Area
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. DC Current Gain

500 300 V, VOLTAGE (VOLTS)

1

0.8

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V

100

VCE = 2 V

0.6

0.4

50

0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000

Figure 3. Current–Gain — Bandwidth Product

Figure 4. “Saturation” and “On” Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

–0.2

–1.0 VCE = 2 VOLTS ∆T = 0°C to +100°C –1.6 θV for VBE –2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000

Figure 5. Temperature Coefficients

2–138

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Current Transistors
PNP Silicon
COLLECTOR 2 3 BASE 1 EMITTER

BC636 BC638 BC640

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC636 –45 –45 BC638 –60 –60 –5.0 –0.5 625 5.0 1.5 12 – 55 to +150 BC640 –80 –80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C

CASE 29–04, STYLE 14 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage* (IC = –10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc

Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0)

Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–139

BC636 BC638 BC640
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc) hFE BC636 BC638 BC640 VCE(sat) VBE(on) 25 40 40 40 25 — — — — — — — — –0.25 –0.5 — — 250 160 160 — –0.5 — –1.0 Vdc Vdc —

(IC = –500 mA, VCE = –2.0 V) Collector – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) Base–Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. fT Cob Cib — — — 150 9.0 110 — — — MHz pF pF

2–140

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC636 BC638 BC640
–1000 –500 IC, COLLECTOR CURRENT (mA) –200 –100 –50 –20 –10 –5 –2 –1 –1 PD TA 25°C PD TC 25°C BC636 BC638 BC640 PD TC 25°C PD TA 25°C SOA = 1S hFE, DC CURRENT GAIN 200 –A 100 –L 500 VCE = –2 V –B

50

–2 –3 –4 –5 –7 –10 –20 –30–40 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20

–1

–3

–5

–10 –30 –50 –100 IC, COLLECTOR CURRENT (mA)

–300 –500 –1000

Figure 1. Active Region Safe Operating Area
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. DC Current Gain

500 300 V, VOLTAGE (VOLTS)

–1

–0.8

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –2 V

100

VCE = –2 V

–0.6

–0.4

50

–0.2 VCE(sat) @ IC/IB = 10 20 –1 –10 –100 IC, COLLECTOR CURRENT (mA) –1000 0 –1 –100 –10 IC, COLLECTOR CURRENT (mA) –1000

Figure 3. Current Gain Bandwidth Product

Figure 4. “Saturation” and “On” Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

–0.2

–1.0 VCE = –2 VOLTS ∆T = 0°C to +100°C –1.6 θV for VBE –2.2 –1 –3 –5 –10 –30 –50 –100 IC, COLLECTOR CURRENT (mA) –300 –500 –1000

Figure 5. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–141

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
2 BASE 1 EMITTER COLLECTOR 3

BC807-16LT1 BC807-25LT1 BC807-40LT1

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit

DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, TJ = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — –100 –5.0 nA µA –45 –50 –5.0 — — — — — — V V V

REV 1

2–142

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC807-16LT1 BC807-25LT1 BC807-40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –100 mA, VCE = –1.0 V) hFE BC807–16 BC807–25 BC807–40 VCE(sat) VBE(on) 100 160 250 40 — — — — — — — — 250 400 600 — –0.7 –1.2 V V —

(IC = –500 mA, VCE = –1.0 V) Collector – Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) Base – Emitter On Voltage (IC = –500 mA, IB = –1.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) fT Cobo 100 — — 10 — — MHz pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–143

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
1 BASE 2 EMITTER COLLECTOR 3

BC817-16LT1 BC817-25LT1 BC817-40LT1

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit

DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — 100 5.0 nA µA 45 50 5.0 — — — — — — V V V

REV 2

2–144

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC817-16LT1 BC817-25LT1 BC817-40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC817–16 BC817–25 BC817–40 VCE(sat) VBE(on) 100 160 250 40 — — — — — — — — 250 400 600 — 0.7 1.2 V V —

(IC = 500 mA, VCE = 1.0 V) Collector – Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base – Emitter On Voltage (IC = 500 mA, VCE = 1.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) fT Cobo 100 — — 10 — — MHz pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–145

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors

NPN Silicon
1 BASE

COLLECTOR 3

BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

2 EMITTER

BC846, BC847 and BC848 are Motorola Preferred Devices

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
1 2 3

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature

DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C BC848A,B,C, BC849B,C, BC850B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V

V(BR)CES

V

V(BR)CBO

V

V(BR)EBO

V

Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.

ICBO

nA µA

REV 1

2–146

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV —

(IC = 2.0 mA, VCE = 5.0 V)

Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC849B,C, BC850B,C 1.0 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3

Figure 1. Normalized DC Current Gain
2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0

Figure 2. “Saturation” and “On” Voltages

–55°C to +125°C 1.2 1.6 2.0 2.4 2.8

0.4

0

0.02

0.1 1.0 IB, BASE CURRENT (mA)

10

20

0.2

10 1.0 IC, COLLECTOR CURRENT (mA)

100

Figure 3. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Base–Emitter Temperature Coefficient 2–147

BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

BC847/BC848
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C 400 300 200

3.0 Cob 2.0

100 80 60 40 30 20 0.5 0.7

VCE = 10 V TA = 25°C

1.0

0.4 0.6 0.8 1.0

4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS)

20

40

1.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.4

–1.8 θVB for VBE –2.2 –55°C to 125°C

0.8

0.4

–2.6

0

–3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

0.02

0.05

0.1

0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

5.0

10

20

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

2–148

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

BC846
40 TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

500

VCE = 5 V TA = 25°C

200 100 50

20

2.0

0.1

0.2

0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–149

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
COLLECTOR 3 1 BASE 2 EMITTER

BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc
1 2 3

CASE 419–02, STYLE 3 SOT–323/SC–70

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD RqJA PD TJ, Tstg Max 150 833 2.4 – 55 to +150 Unit mW °C/W mW/°C °C

DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA) Collector – Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V

V(BR)CES

V

V(BR)CBO

V

V(BR)EBO

V

ICBO

nA µA

2–150

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV —

(IC = 2.0 mA, VCE = 5.0 V)

Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10

Figure 1. Normalized DC Current Gain
2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0

Figure 2. “Saturation” and “On” Voltages

–55°C to +125°C 1.2 1.6 2.0 2.4 2.8

0.4

0

0.02

0.1 1.0 IB, BASE CURRENT (mA)

10

20

0.2

10 1.0 IC, COLLECTOR CURRENT (mA)

100

Figure 3. Collector Saturation Region

Figure 4. Base–Emitter Temperature Coefficient

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–151

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

BC847/BC848
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C 400 300 200

3.0 Cob 2.0

100 80 60 40 30 20 0.5 0.7

VCE = 10 V TA = 25°C

1.0

0.4 0.6 0.8 1.0

4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS)

20

40

1.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.4

–1.8 θVB for VBE –2.2 –55°C to 125°C

0.8

0.4

–2.6

0

–3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

0.02

0.05

0.1

0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

5.0

10

20

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

2–152

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

BC846
40 TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

500

VCE = 5 V TA = 25°C

200 100 50

20

2.0

0.1

0.2

0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–153

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors

PNP Silicon
1 BASE

BC856ALT1,BLT1
COLLECTOR 3

BC857ALT1,BLT1 BC858ALT1,BLT1, CLT1

Motorola Preferred Devices

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100

2 EMITTER Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
1 2 3

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature

DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO –65 –45 –30 –80 –50 –30 –80 –50 –30 –5.0 –5.0 –5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — –15 –4.0 V

V(BR)CES

V

V(BR)CBO

V

V(BR)EBO

V

Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.

ICBO

nA µA

REV 1

2–154

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) — — VBE(sat) — — VBE(on) –0.6 — — — –0.75 –0.82 –0.7 –0.9 — — V — — –0.3 –0.65 V hFE — — — 125 220 420 90 150 270 180 290 520 — — — 250 475 800 V —

(IC = –2.0 mA, VCE = –5.0 V)

Collector – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 — — — — — — 4.5 10 MHz pF dB

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–155

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

BC857/BC858

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS)

–1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10

0.3 0.2 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc)

–100 –200

0 –0.1 –0.2

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

–2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C –1.6

1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8

–1.2 IC = –10 mA IC = –50 mA IC = –20 mA IC = –200 mA IC = –100 mA

–0.8

–0.4

0

–0.02

–0.1 –1.0 IB, BASE CURRENT (mA)

–10 –20

–0.2

–10 –1.0 IC, COLLECTOR CURRENT (mA)

–100

Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

Figure 4. Base–Emitter Temperature Coefficient

10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C

400 300 200 150 100 80 60 40 30 20 –0.5 VCE = –10 V TA = 25°C

3.0 2.0

1.0 –0.4 –0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–1.0

–2.0 –3.0

–5.0

–10

–20

–30

–50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

2–156

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

BC856
–1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = –5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4

–0.2 0.2 0 –0.2 VCE(sat) @ IC/IB = 10 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) –0.5 –50 –100 –200 –5.0 –10 –20 –1.0 –2.0 IC, COLLECTOR CURRENT (mA)

–0.1 –0.2

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.6 IC = –10 mA –20 mA –50 mA –100 mA –200 mA

–1.4

–1.2

–1.8

θVB for VBE

–55°C to 125°C

–0.8

–2.2

–0.4 TJ = 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA) –5.0 –10 –20

–2.6

–3.0 –0.2

–0.5 –1.0

–50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–100 –200

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib

500

VCE = –5.0 V

200 100 50

10 8.0 6.0 4.0 2.0 –0.1 –0.2 Cob

20

–0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

–50 –100

–100 –1.0 –10 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–157

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZθJC(t) = r(t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 500 1.0 k 2.0 k 5.0 k 10 k

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

SINGLE PULSE

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

Figure 13. Thermal Response

–200 1s IC, COLLECTOR CURRENT (mA) –100 –50 TA = 25°C TJ = 25°C 3 ms The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.

–10 –5.0

BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V)

–2.0 –1.0

Figure 14. Active Region Safe Operating Area

2–158

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
COLLECTOR 3 1 BASE 2 EMITTER

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1
Motorola Preferred Devices

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc

1 2

CASE 419–02, STYLE 3 SOT–323/SC–70

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO –65 –45 –30 –80 –50 –30 –80 –50 –30 –5.0 –5.0 –5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — –15 –4.0 V

V(BR)CES

V

V(BR)CBO

V

V(BR)EBO

V

Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in
Preferred devices are Motorola recommended choices for future use and best overall value.

ICBO

nA µA

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–159

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) — — VBE(sat) — — VBE(on) –0.6 — — — –0.75 –0.82 –0.7 –0.9 — — V — — –0.3 –0.65 V hFE — — — 125 220 420 90 150 270 180 290 520 — — — 250 475 800 V —

(IC = –2.0 mA, VCE = –5.0 V)

Collector – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base – Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 — — — — — — 4.5 10 MHz pF dB

2–160

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

BC857/BC858

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS)

–1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 VBE(on) @ VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10

0.3 0.2 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc)

–100 –200

0 –0.1 –0.2

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

–2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C –1.6

1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8

–1.2 IC = –10 mA IC = –50 mA IC = –20 mA IC = –200 mA IC = –100 mA

–0.8

–0.4

0

–0.02

–0.1 –1.0 IB, BASE CURRENT (mA)

–10 –20

–0.2

–10 –1.0 IC, COLLECTOR CURRENT (mA)

–100

Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

Figure 4. Base–Emitter Temperature Coefficient

10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C

400 300 200 150 100 80 60 40 30 20 –0.5 VCE = –10 V TA = 25°C

3.0 2.0

1.0 –0.4 –0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–1.0

–2.0 –3.0

–5.0

–10

–20

–30

–50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–161

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

BC856
–1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = –5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4

–0.2 0.2 0 –0.2 VCE(sat) @ IC/IB = 10 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) –0.5 –50 –100 –200 –5.0 –10 –20 –1.0 –2.0 IC, COLLECTOR CURRENT (mA)

–0.1 –0.2

Figure 7. DC Current Gain

Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C)

–1.0

–1.6 IC = –10 mA –20 mA –50 mA –100 mA –200 mA

–1.4

–1.2

–1.8

θVB for VBE

–55°C to 125°C

–0.8

–2.2

–0.4 TJ = 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA) –5.0 –10 –20

–2.6

–3.0 –0.2

–0.5 –1.0

–50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–100 –200

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib

500

VCE = –5.0 V

200 100 50

10 8.0 6.0 4.0 2.0 –0.1 –0.2 Cob

20

–0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

–50 –100

–100 –1.0 –10 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

2–162

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZθJC(t) = r(t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 500 1.0 k 2.0 k 5.0 k 10 k

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

SINGLE PULSE

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

Figure 13. Thermal Response

–200 1s IC, COLLECTOR CURRENT (mA) –100 –50 TA = 25°C TJ = 25°C 3 ms The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.

–10 –5.0

BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V)

–2.0 –1.0

Figure 14. Active Region Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–163

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Current: 1.5 Amps • NPN Complement is BCP56 • The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4

BCP53T1
Motorola Preferred Device

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

4

1

BASE 1 EMITTER 3

2 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value – 80 –100 – 5.0 1.5 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C

DEVICE MARKING
AH

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–164

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCP53T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = – 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICBO IEBO –100 – 80 –100 – 5.0 — — — — — — — — — — — — –100 –10 Vdc Vdc Vdc Vdc nAdc µAdc

ON CHARACTERISTICS
DC Current Gain (IC = – 5.0 mAdc, VCE = – 2.0 Vdc) (IC = –150 mAdc, VCE = – 2.0 Vdc) (IC = – 500 mAdc, VCE = – 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = – 500 mAdc, IB = – 50 mAdc) Base-Emitter On Voltage (IC = – 500 mAdc, VCE = – 2.0 Vdc) hFE 25 40 25 VCE(sat) VBE(on) — — — — — — — — 250 — – 0.5 –1.0 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 5.0 Vdc, f = 35 MHz) fT — 50 — MHz

TYPICAL ELECTRICAL CHARACTERISTICS
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 2 V hFE , DC CURRENT GAIN 500 300

200

VCE = 2 V 100 50

100

50

20

1

3

5

10 30 50 100 IC, COLLECTOR CURRENT (mA)

300 500

1000

20

1

10 100 IC, COLLECTOR CURRENT (mA)

1000

Figure 1. DC Current Gain
1 120 110 100 90 80 70 60 50 40 30 20 10 0 0

Figure 2. Current Gain Bandwidth Product

0.8 V, VOLTAGE (VOLTS)

0.6

V(BE)on @ VCE = 2 V

C, CAPACITANCE (pF)

V(BE)sat @ IC/IB = 10

Cib

0.4

0.2 V(CE)sat @ IC/IB = 10 0 1 10 100 1000

Cob 2 4 6 8 10 12 14 16 18 20

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

Figure 3. Saturation and “ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Capacitances 2–165

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel • PNP Complement is BCP53T1
BASE 1 EMITTER 3

BCP56T1 SERIES
Motorola Preferred Device

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

4

COLLECTOR 2,4
1 2 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 80 100 5 1 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C

DEVICE MARKING
BCP56T1 = BH BCP56-10T1 = BK BCP56-16T1 = BL

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–166

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCP56T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 100 80 5.0 — — — — — — — — — — 100 10 Vdc Vdc Vdc nAdc µAdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP56-16T1 All Types VCE(sat) VBE(on) 25 40 63 100 25 — — — — — — — — — — 250 160 250 — 0.5 1.0 Vdc Vdc —

(IC = 500 mA, VCE = 2.0 V) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% fT — 130 — MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–167

BCP56T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
1000

hFE, DC CURRENT GAIN

TJ = 125°C TJ = 25°C 100 TJ = – 55°C

10

1

10 IC, COLLECTOR CURRENT (mA)

100

1000

Figure 1. DC Current Gain
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

1000

80 60 C, CAPACITANCE (pF) 40 Cibo TJ = 25°C

100

20

10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

10 1.0

10 100 IC, COLLECTOR CURRENT (mA)

1000

4.0 0.1

Figure 2. Current-Gain — Bandwidth Product

Figure 3. Capacitance

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA

0.6

0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 500

0.2 0 0.05

0.1

0.2

0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50

Figure 4. “On” Voltages

Figure 5. Collector Saturation Region

2–168

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: IC = 1.0 Amp • The SOT-223 Package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP68T1 to order the 7 inch/1000 unit reel. Use BCP68T3 to order the 13 inch/4000 unit reel. • The PNP Complement is BCP69T1
COLLECTOR 2,4

BCP68T1
Motorola Preferred Device

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

4

1

2 3

BASE 1 EMITTER 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 25 20 5 1 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C

DEVICE MARKING
CA

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–169

BCP68T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO 25 20 5.0 — — — — — — — — — — 10 10 Vdc Vdc Vdc µAdc µAdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) — — — — — — — — 375 — 0.5 1.0 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% fT — 60 — MHz

TYPICAL ELECTRICAL CHARACTERISTICS
f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 300 200

hFE, DC CURRENT GAIN

300 200 100

TJ = 125°C = 25°C = – 55°C

100 70 50 VCE = 10 V TJ = 25°C f = 30 MHz

VCE = 1.0 V 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000

30

10

100 200 IC, COLLECTOR CURRENT (mA)

1000

Figure 1. DC Current Gain

Figure 2. Current-Gain-Bandwidth Product

2–170

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCP68T1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 Cib, CAPACITANCE (pF) 80 TJ = 25°C 70

0.8 V, VOLTAGE (VOLTS)

0.6

VBE(on) @ VCE = 1.0 V

60

0.4

50

0.2

VCE(sat) @ IC/IB = 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)

40

0

30

0

1.0

2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS)

5.0

Figure 3. “On” Voltage

Figure 4. Capacitance

TJ = 25°C Cob, CAPACITANCE (pF) 20

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

25

– 0.8

–1.2

–1.6 RθVB for VBE – 2.0

15

10

– 2.4

5.0

0

5.0 10 15 VR, REVERSE VOLTAGE (VOLTS)

20

– 2.8 1.0

10 100 IC, COLLECTOR CURRENT (mA)

1000

Figure 5. Capacitance

Figure 6. Base-Emitter Temperature Coefficient

1.0 VCE , COLLECTOR VOLTAGE (V)

TJ = 25°C

0.8

0.6

= 1000 mA I C = 10 mA = 100 mA

0.4

= 50 mA

0.2

= 500 mA

0 0.01

0.1

1.0 10 IB, BASE CURRENT (mA)

100

Figure 7. Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–171

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: IC = –1.0 Amp • The SOT-223 Package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. • NPN Complement is BCP68
COLLECTOR 2,4

BCP69T1
Motorola Preferred Device

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

4

1

2 3

BASE 1 EMITTER 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value – 25 – 20 – 5.0 –1.0 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C

DEVICE MARKING
CE

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–172

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCP69T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = – 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO – 25 – 20 – 5.0 — — — — — — — — — — –10 –10 Vdc Vdc Vdc µAdc µAdc

ON CHARACTERISTICS
DC Current Gain (IC = – 5.0 mAdc, VCE = –10 Vdc) (IC = – 500 mAdc, VCE = –1.0 Vdc) (IC = –1.0 Adc, VCE = –1.0 Vdc) Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) — — — — — — — — 375 — – 0.5 –1.0 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 5.0 Vdc) fT — 60 — MHz

TYPICAL ELECTRICAL CHARACTERISTICS
200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200

hFE , CURRENT GAIN

100 70 50 VCE = –1.0 V TJ = 25°C

100 70 50 VCE = –10 V TJ = 25°C f = 30 MHz

20 –10

–100 IC, COLLECTOR CURRENT (mA)

–1000

30 –10

–100 IC, COLLECTOR CURRENT (mA)

–1000

Figure 1. DC Current Gain
–1.0 – 0.8 V, VOLTAGE (VOLTS) TJ = 25°C V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) 160

Figure 2. Current Gain Bandwidth Product

TJ = 25°C 120

– 0.6

V(BE)on @ VCE = –1.0 V

80 Cib 40 Cob 0 Cob Cib – 5.0 –1.0 –1.0 – 2.0 –1.5 – 3.0 – 2.0 – 4.0 – 2.5 – 5.0

– 0.4

– 0.2

V(CE)sat @ IC/IB = 10 –10 –100 –1000 IC, COLLECTOR CURRENT (mA)

0 –1.0

Figure 3. Saturation and “ON” Voltages

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–173

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER

BCW29LT1 BCW30LT1
3 1

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IE = 0) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IC = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –32 Vdc, IE = 0) (VCB = –32 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO — — –100 –10 nAdc µAdc –32 –32 –32 –5.0 — — — — Vdc Vdc Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–174

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW29LT1 BCW30LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BCW29 BCW30 VCE(sat) — VBE(on) –0.6 –0.75 –0.3 Vdc 120 215 260 500 — — Vdc

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = –10 Vdc, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo — NF — 10 7.0 dB pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–175

BCW29LT1 BCW30LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband 2–176 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW29LT1 BCW30LT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C 25°C

h FE, DC CURRENT GAIN

200

– 55°C 100 80 60 40 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 6. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

IC, COLLECTOR CURRENT (mA)

TA = 25°C BCW29LT1

100

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–177

BCW29LT1 BCW30LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 11. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 12. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Current–Gain — Bandwidth Product

Figure 14. Capacitance

20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 BCW29LT1 hfe ≈ 200 @ IC = –1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = –10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C BCW29LT1 hfe ≈ 200 @ IC = 1.0 mA

Figure 15. Input Impedance

Figure 16. Output Admittance

2–178

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW29LT1 BCW30LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 17. Thermal Response

104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 18. Typical Collector Leakage Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–179

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER

BCW33LT1
3 1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW33LT1 = D3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — 100 10 nAdc µAdc 32 32 5.0 — — — Vdc Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–180

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW33LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 420 VCE(sat) — VBE(on) 0.55 0.70 0.25 Vdc 800 Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo NF — — 4.0 10 pF dB

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–181

BCW33LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

Ǔ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband 2–182 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW33LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) BCW33LT1 TJ = 25°C 100

0.8 IC = 1.0 mA 10 mA 50 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

100 mA

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 8. Collector Saturation Region

Figure 9. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–183

BCW33LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 12. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 13. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Current–Gain — Bandwidth Product
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200

Figure 15. Capacitance

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D = 0.5

0.2

FIGURE 19A

DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 16. Thermal Response

2–184

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW33LT1
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 16 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 16A.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–185

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
COLLECTOR 3 1 BASE

BCW60ALT1 BCW60BLT1 BCW60DLT1
3

2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc µAdc nAdc 32 5.0 — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–186

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW60ALT1 BCW60BLT1 BCW60DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) hFE BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D hfe BCW60A BCW60B BCW60D VCE(sat) — — VBE(sat) 0.7 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.35 Vdc 125 175 350 250 350 700 Vdc 20 30 100 120 175 380 60 70 100 — — — 220 310 630 — — — — —

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

AC Current Gain (VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)

Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT 125 Cobo — NF — 6.0 4.5 dB — pF MHz

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω) ton — toff — 800 150 ns ns

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–187

BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

Ǔ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband 2–188 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C

h FE, DC CURRENT GAIN

200

25°C

– 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TJ = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 9. Collector Saturation Region

Figure 10. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–189

BCW60ALT1 BCW60BLT1 BCW60DLT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 14. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product

Figure 16. Capacitance

20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe ≈ 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA

Figure 17. Input Impedance

Figure 18. Output Admittance

2–190

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW60ALT1 BCW60BLT1 BCW60DLT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 19. Thermal Response

104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19A.

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C dc TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

100 µs 10 µs 1.0 s

dc

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

Figure 20.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–191

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
COLLECTOR 3 1 BASE

BCW61BLT1 BCW61CLT1 BCW61DLT1
3

2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = –32 Vdc) (VCE = –32 Vdc, TA = 150°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — –20 –20 nAdc µAdc –32 –5.0 — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–192

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D hfe BCW61B BCW61C BCW61D VCE(sat) — — VBE(sat) –0.68 –0.6 VBE(on) –0.6 –0.75 –1.05 –0.85 Vdc –0.55 –0.25 Vdc 175 250 350 350 500 700 Vdc 30 40 100 140 250 380 80 100 100 — — — 310 460 630 — — — — —

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

AC Current Gain (VCE = –5.0 Vdc, IC = –2.0 mAdc, f = 1.0 kHz)

Collector – Emitter Saturation Voltage (IC = –50 mAdc, IB = –1.25 mAdc) (IC = –10 mAdc, IB = –0.25 mAdc) Base – Emitter Saturation Voltage (IC = –50 mAdc, IB = –1.25 mAdc) (IC = –10 mAdc, IB = –0.25 mAdc) Base – Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCE = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = –5.0 Vdc, IC = –0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo — NF — 6.0 6.0 dB pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = –10 mAdc, IB1 = –1.0 mAdc) Turn–Off Time (IB2 = –1.0 mAdc, VBB = –3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω) ton — toff — 800 150 ns ns

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–193

BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband 2–194 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 100 IC, COLLECTOR CURRENT (mA)

TA = 25°C BCW61

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 6. Collector Saturation Region

Figure 7. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 8. “On” Voltages

Figure 9. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–195

BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 10. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 11. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current–Gain — Bandwidth Product
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200

Figure 13. Capacitance

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D = 0.5

0.2

FIGURE 19

DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 14. Thermal Response

2–196

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW61BLT1 BCW61CLT1 BCW61DLT1
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 15. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 14 by the steady state value RθJA. Example: The MPS3905 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–197

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE

BCW65ALT1
3 1

2 EMITTER

2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 32 60 5.0 800 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW65ALT1 = EA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)EBO ICES — — IEBO — — — — 20 20 20 nAdc µAdc nAdc 32 60 5.0 — — — — — — Vdc Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–198

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW65ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 75 100 35 VCE(sat) — — VBE(sat) — — 2.0 0.7 0.3 — — Vdc — — — — — 220 250 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 100 — — — — — — — — 12 80 10 MHz pF pF dB

SWITCHING CHARACTERISTICS
Turn–On Time (IB1 = IB2 = 15 mAdc) Turn–Off Time (IC = 150 mAdc, RL = 150 Ω) ton toff — — — — 100 400 ns ns

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–199

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER

BCW68GLT1
3 1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –45 –60 –5.0 –800 Unit Vdc Vdc Vdc mAdc

DEVICE MARKING
BCW68GLT1 = DH

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCE= –45 Vdc, IE = 0) (VCE= –45 Vdc, IB = 0, TA = 150°C) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICES — — IEBO — — — — –20 –10 –20 nAdc µAdc nAdc –45 –60 –5.0 — — — — — — Vdc Vdc Vdc

2–200

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW68GLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) (IC = –300 mAdc, VCE = –1.0 Vdc) Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc) Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) hFE 120 160 60 VCE(sat) VBE(sat) — — — — — — — 400 — — –1.5 –2.0 Vdc Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB= –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC= –0.2 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 100 — — — — — — — — 18 105 10 MHz pF pF dB

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–201

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
COLLECTOR 3 1 BASE

BCW69LT1 BCW70LT1
3 1

2 EMITTER

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –45 –5.0 –100 Unit Vdc Vdc mAdc

DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –20 Vdc, IE = 0) (VCB = –20 Vdc, IE = 0, TA = 100°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICBO — — –100 –10 nAdc µAdc –45 –50 –5.0 — — — Vdc Vdc Vdc

2–202

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BCW69 BCW70 VCE(sat) VBE(on) 120 215 — –0.6 260 500 –0.3 –0.75 Vdc Vdc —

Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = –10 Vdc, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo NF — — 7.0 10 pF dB

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–203

BCW69LT1 BCW70LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband 2–204 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW69LT1 BCW70LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 100 IC, COLLECTOR CURRENT (mA)

TA = 25°C

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 6. Collector Saturation Region

Figure 7. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 8. “On” Voltages

Figure 9. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–205

BCW69LT1 BCW70LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 10. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 11. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current–Gain — Bandwidth Product

Figure 13. Capacitance

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02

D = 0.5

0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 14. Thermal Response

2–206

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW69LT1 BCW70LT1
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 14 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–207

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER

BCW72LT1
3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 100 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCW72LT1 = K2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO — — — — 100 10 nAdc mAdc 45 45 50 5.0 — — — — — — — — Vdc Vdc Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–208

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW72LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) Base – Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 200 VCE(sat) — — VBE(sat) — VBE(on) 0.6 — 0.75 0.85 — Vdc — 0.21 0.25 — Vdc — 450 Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Input Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF — — — — 300 — 9.0 — — 4.0 — 10 MHz pF pF dB

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Noise Current 2–209

BCW72LT1
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

Ǔ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband

2–210

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW72LT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C

h FE, DC CURRENT GAIN

200

25°C

– 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TJ = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 9. Collector Saturation Region

Figure 10. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–211

BCW72LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 14. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product

Figure 16. Capacitance

20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe ≈ 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA

Figure 17. Input Impedance

Figure 18. Output Admittance

2–212

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCW72LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 19. Thermal Response

104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19A.

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C dc TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

100 µs 10 µs 1.0 s

dc

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

Figure 20.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–213

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

COLLECTOR 3 1 BASE 2 EMITTER

COLLECTOR 3 1 BASE 2 EMITTER

PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1
Voltage and current are negative for PNP transistors
3 1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Value Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BCX17LT1 BCX19LT1 45 50 5.0 500 BCX18LT1 BCX20LT1 25 30 Unit Vdc Vdc Vdc mAdc

DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

2–214

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO BCX17, 19 BCX18, 20 V(BR)CES BCX17, 19 BCX18, 20 ICBO — — IEBO — — — — 100 5.0 10 nAdc µAdc µAdc 50 30 — — — — 45 25 — — — — Vdc Vdc

ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 100 70 40 VCE(sat) VBE(on) — — — — — — — 600 — — 0.62 1.2 Vdc Vdc —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–215

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER

BCX70GLT1 BCX70JLT1 BCX70KLT1
3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

2–216

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCX70GLT1 BCX70JLT1 BCX70KLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) — — VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc — 40 100 120 250 380 60 90 100 — — — 220 460 630 — — — Vdc —

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Small – Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) BCX70G BCX70J BCX70K NF fT Cobo hfe 125 250 350 — 250 500 700 6.0 dB 125 — — 4.5 MHz pF —

Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990Ω) ton toff — — 150 800 ns ns

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–217

BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

Ǔ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband 2–218 Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C

h FE, DC CURRENT GAIN

200

25°C

– 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TJ = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 9. Collector Saturation Region

Figure 10. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–219

BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 14. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product

Figure 16. Capacitance

20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe ≈ 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA

Figure 17. Input Impedance

Figure 18. Output Admittance

2–220

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BCX70GLT1 BCX70JLT1 BCX70KLT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 19. Thermal Response

104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19A.

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C dc TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

100 µs 10 µs 1.0 s

dc

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

Figure 20.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–221

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

One Watt Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE

BDB01C

1

2

1 EMITTER

3

CASE 29–05, STYLE 1 TO–92 (TO–226AE)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 80 80 5.0 0.5 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C

PD

TJ, Tstg

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO 80 ICBO — IEBO — 100 0.01 nAdc — Vdc

mAdc

REV 1

2–222

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BDB01C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector – Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector – Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) — — 400 — 0.7 1.2 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 — — 30 MHz pF

v 300 ms, Duty Cycle 2.0%.

400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500

VCE = 1.0 V

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V

0.6

0.4

0.4

0.2

0.2 VCE(sat) @ IC/IB = 10

0 0.05

0.1

0.2

1.0 0.5 2.0 5.0 IB, BASE CURRENT (mA)

10

20

50

0 0.5

1.0

2.0

20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

200

500

Figure 2. Collector Saturation Region

Figure 3. On Voltages

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–223

BDB01C
θ VB, TEMPERATURE COEFFICIENT (mV/°C) –0.8 –1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C

–1.6 θVB for VBE

20

–2.0

–2.4

10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

–2.8 0.5

1.0

2.0

5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)

200

500

4.0 0.1

Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 5. Capacitance

300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25°C DUTY CYCLE ≤ 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25°C TC = 25°C 1.0 s 1.0 ms 100 µs

100 70 50

dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN BDB01C LIMIT 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Current–Gain — Bandwidth Product

Figure 7. Active Region–Safe Operating Area

2–224

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

One Watt Amplifier Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BDB02C

1

2

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value –80 –80 –5.0 –0.5 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C CASE 29–05, STYLE 1 TO–92 (TO–226AE)

PD

TJ, Tstg

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Voltage (IC = –10 mA, IB = 0) Collector Cutoff Current (VCB = –80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = –5.0 V) V(BR)CEO –80 ICBO — IEBO — –0.1 –100 nAdc — Vdc

mAdc

ON CHARACTERISTICS
DC Current Gain (IC = –100 mA, VCE = –1.0 V) (IC = –500 mA, VCE = –2.0 V) Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA) Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.0 V) hFE 40 25 VCE(sat) VBE(on) — — 400 — –0.7 –1.2 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz) Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width REV 1 fT Cob 50 — — 30 MHz pF

v 300 ms, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–225

BDB02C
400 TJ = 125°C hFE, DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.5 –0.7

VCE = –1.0 V

–1.0

–2.0

–3.0

–5.0

–7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA)

–50

–70

–100

–200

–300

–500

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V

–0.6 IC = –10 mA –0.4

–50 mA

–100 mA

–250 mA

–500 mA

–0.4

–0.2

–0.2 VCE(sat) @ IC/IB = 10

0 –0.05 –0.1

–0.2

–0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA)

–10

–20

–50

0 –0.5 –1.0

–2.0

–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)

–500

Figure 2. Collector Saturation Region

Figure 3. On Voltages

θ VB, TEMPERATURE COEFFICIENT (mV/°C)

–0.8 –1.2 C, CAPACITANCE (pF)

100 70 50 30 20 Cibo TJ = 25°C

–1.6 θVB for VBE

–2.0

–2.4

10 7.0

Cobo

–2.8 –0.5

–1.0

–2.0

–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)

–500

5.0 –0.1

–0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

–50 –100

Figure 4. Base–Emitter Temperature Coefficient

Figure 5. Capacitance

2–226

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BDB02C
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz 300 IC, COLLECTOR CURRENT (mA) 200 VCE = –2.0 V TJ = 25°C DUTY CYCLE ≤ 10% –2 k –1 k –500 –200 –100 –50 –20 30 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) –200 –10 –1.0 BDB02C –2.0 –5.0 –10 –20 –45 –60 –80 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) TA = 25°C TC = 25°C 10 s dc 1.0 ms 100 µs

100 70 50

dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

Figure 6. Current–Gain — Bandwidth Product

Figure 7. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–227

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

One Watt Amplifier Transistor
NPN Silicon
COLLECTOR 2 3 BASE

BDC01D

1

2

1 EMITTER

3

CASE 29–05, STYLE 14 TO–92 (TO–226AE)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BDC01D 100 100 5.0 0.5 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO ICBO IEBO 100 — — — 0.1 100 Vdc

mAdc
nAdc

2–228

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector – Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector – Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) — — 400 — 0.7 1.2 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 — — 30 MHz pF

v 300 ms; Duty Cycle 2.0%.

400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500

VCE = 1.0 V

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V

0.6

0.4

0.4

0.2

0.2 VCE(sat) @ IC/IB = 10

0 0.05

0.1

0.2

0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA)

10

20

50

0 0.5

1.0

2.0

20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

200

500

Figure 2. Collector Saturation Region

Figure 3. “On” Voltages

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–229

BDC01D
θ VB, TEMPERATURE COEFFICIENT (mV/°C) –0.8 –1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C

–1.6 θVB for VBE

20

–2.0

–2.4

10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

–2.8 0.5

1.0

2.0

5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)

200

500

4.0 0.1

Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 5. Capacitance

300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25°C DUTY CYCLE ≤ 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25°C TC = 25°C 1.0 s 1.0 ms 100 µs

100 70 50

dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 10 20 60 80 100 2.0 5.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Current–Gain — Bandwidth Product

Figure 7. Active Region — Safe Operating Area

2–230

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

RF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER

BF199

1 2 3

CASE 29–04, STYLE 21 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 25 40 4.0 100 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO 25 V(BR)CBO 40 V(BR)EBO 4.0 ICBO — — 100 — — nAdc — — Vdc — — Vdc Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–231

BF199
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) Base–Emitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) hFE 40 VBE(on) — 770 900 85 — mVdc —

SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 35 MHz) fT 400 Cre — Nf — 2.5 — 0.25 0.35 dB 750 — pF MHz

2–232

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF199
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25°C BF199 10

C, CAPACITANCE (pF)

2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob

20 10

Cre @ IE = 0

0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA)

100

0.1

0.2

0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Current–Gain — Bandwidth Product

Figure 2. Capacitances

100 VCE = 10 V TA = 25°C hFE, DC CURRENT GAIN VCE = 10 V 50 100 MHz

200 100 70 50 30 20 10 0.1 mmhos BF199

20 10 5

45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2 1

0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA)

2

3

Figure 3. DC Current Gain

Figure 4. b11e

–100 VCE = 10 V –50 45 MHz 100 MHz

2000 1000 VCE = 10 V 500 µmhos 45 MHz 100 MHz

mmhos

–20 –10 –5

10.7 MHz

200 100 50

10.7 MHz

–2 –1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2

3

20

470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7

Figure 5. b21e

Figure 6. b22e (boe)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–233

BF199
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz

20 10 5

0.2 0.1

2

3

4 5 6 IC, COLLECTOR CURRENT (mA)

7

8

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 7. g11e (gie)

Figure 8. g21e (Yfe)

200 VCE = 10 V 100 50 µmhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 9. g22e (goe)

2–234

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

RF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER

BF224

1 2 3

CASE 29–04, STYLE 21 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 45 4.0 50 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 45 V(BR)EBO 4.0 ICBO — IEBO — — 100 — 100 nAdc — — nAdc — — Vdc — — Vdc Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–235

BF224
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) Base–Emitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 VBE(on) — VCE(sat) — — 0.15 0.77 0.9 Vdc — — mVdc —

SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCE = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 100 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 200 MHz) fT 300 — Cre — Nf — — 2.5 3.5 — — 0.28 — dB 600 850 — — pF MHz

2–236

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF224
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25°C BF224 10

C, CAPACITANCE (pF)

2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob

20 10

Cre @ IE = 0

0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA)

100

0.1

0.2

0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Current–Gain — Bandwidth Product

Figure 2. Capacitances

100 VCE = 10 V TA = 25°C hFE, DC CURRENT GAIN VCE = 10 V 50 100 MHz

200 100 70 50 30 20 10 0.1 mmhos BF224

20 10 5

45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2 1

0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA)

2

3

Figure 3. DC Current Gain

Figure 4. b11e

–100 VCE = 10 V –50 45 MHz 100 MHz

2000 1000 VCE = 10 V 500 µmhos 45 MHz 100 MHz

mmhos

–20 –10 –5

10.7 MHz

200 100 50

10.7 MHz

–2 –1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2

3

20

470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7

Figure 5. b21e

Figure 6. b22e (boe)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–237

BF224
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz

20 10 5

0.2 0.1

2

3

4 5 6 IC, COLLECTOR CURRENT (mA)

7

8

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 7. g11e (gie)

Figure 8. g21e (Yfe)

200 VCE = 10 V 100 50 µmhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 9. g22e (goe)

2–238

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
AM/FM Transistor

NPN Silicon
COLLECTOR 1 3 BASE

BF240

1

2

2 EMITTER

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 4.0 25 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

CASE 29–04, STYLE 21 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 40 40 4.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) hFE VBE(on) 65 0.65 — 0.7 220 0.74 — Vdc

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cre — — 600 0.28 — 0.34 MHz pF

v 300 ms, Duty Cycle v 2.0%.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–239

BF240
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25°C BF240 10

C, CAPACITANCE (pF)

2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob

20 10

Cre @ IE = 0

0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA)

100

0.1

0.2

0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Current–Gain — Bandwidth Product

Figure 2. Capacitances

100 VCE = 10 V TA = 25°C hFE, DC CURRENT GAIN VCE = 10 V 50 100 MHz

200 100 70 50 30 20 10 0.1 mmhos BF240

20 10 5

45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2 1

0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA)

2

3

Figure 3. DC Current Gain

Figure 4. b11e

–100 VCE = 10 V –50 45 MHz 100 MHz

2000 1000 VCE = 10 V 500 µmhos 45 MHz 100 MHz

mmhos

–20 –10 –5

10.7 MHz

200 100 50

10.7 MHz

–2 –1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2

3

20

470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7

Figure 5. b21e

Figure 6. b22e (boe)

2–240

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF240
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz

20 10 5

0.2 0.1

2

3

4 5 6 IC, COLLECTOR CURRENT (mA)

7

8

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 7. g11e (gie)

Figure 8. g21e (Yfe)

200 VCE = 10 V 100 50 µmhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz

2

1

2

3 4 5 IC, COLLECTOR CURRENT (mA)

6

7

Figure 9. g22e (goe)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–241

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BF393

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO 300 V(BR)CBO 300 V(BR)EBO 6.0 ICBO — IEBO — 0.1 0.1 µAdc — µAdc — Vdc — Vdc Vdc

v 300 ms; Duty Cycle v 2.0%.

(Replaces BF392/D)

2–242

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF393
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 VCE(sat) — VBE(sat) — 2.0 2.0 Vdc — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 60 Vdc, IE = 0, f = 1.0 MHz) fT 50 Cre — 2.0 — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–243

BF393
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125°C

100

25°C 50 –55°C

30 20 1.0

2.0

3.0

5.0

7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

Figure 1. DC Current Gain

100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

30 20

2.0 1.0 0.2

100

200

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25°C

500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25°C TC = 25°C 100 ms 100 µs 10 µs 1.0 ms

200

500

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages

Figure 5. Maximum Forward Bias Safe Operating Area

2–244

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
NPN Silicon
COLLECTOR 2 3 BASE 1 EMITTER

BF420 BF422

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BF420 300 300 5.0 500 625 5.0 1.5 12 – 55 to +150 BF422 250 250 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 14 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF420 BF422 V(BR)CBO BF420 BF422 V(BR)EBO BF420 BF422 ICBO BF420 BF422 IEBO BF420 BF422 — — 100 — — — 0.01 — nAdc 5.0 5.0 — — µAdc 300 250 — — Vdc 300 250 — — Vdc Vdc

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–245

BF420 BF422
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE BF420 BF422 VCE(sat) — VBE(sat) — 2.0 0.5 Vdc 50 50 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) fT 60 Cre — 1.6 — pF MHz

2–246

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF420 BF422
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125°C

100

25°C 50 –55°C

30 20 1.0

2.0

3.0

5.0

7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

Figure 1. DC Current Gain

100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

30 20

2.0 1.0 0.2

100

200

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25°C

500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25°C TC = 25°C 100 ms 100 µs 10 µs 1.0 ms

200

500

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages

Figure 5. Maximum Forward Bias Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–247

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
PNP Silicon
COLLECTOR 2 3 BASE 1 EMITTER

BF421 BF423

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD BF421 –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 BF423 –250 –250 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

CASE 29–04, STYLE 14 TO–92 (TO–226AA)

PD

TJ, Tstg

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF421 BF423 V(BR)CBO BF421 BF423 V(BR)EBO BF421 BF423 ICBO BF421 BF423 IEBO BF421 BF423 — — –100 — — — –0.01 — nAdc –5.0 –5.0 — — –300 –250 — — Vdc –300 –250 — — Vdc Vdc

mAdc

v 300 ms; Duty Cycle v 2.0%.

2–248

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF421 BF423
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –25 mA, VCE = –20 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base – Emitter Saturation Voltage (IC = –20 mA, IB = –2.0 mA) hFE BF421 BF423 VCE(sat) VBE(sat) 50 50 — — — — –0.5 –2.0 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = –30 Vdc, IE = 0, f = 1.0 MHz) fT Cre 60 — — 2.8 MHz pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–249

BF421 BF423
150 100 hFE, DC CURRENT GAIN +25°C 70 50 –55°C TJ = +125°C VCE = –10 Vdc

30 20 15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100 50 Cib C, CAPACITANCE (pF) 20 10 5.0

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 80 60 40 30 20

TJ = 25°C VCE = –20 Vdc

2.0 Ccb 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 VR, REVERSE VOLTAGE (VOLTS)

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

–1.0 IC, COLLECTOR CURRENT (mA)

–500 1.0 ms 1.0 s

100 µs

–0.8 V, VOLTAGE (VOLTS) VBE @ VCE = –10 V –0.6

–200 –100

BF423 –50
1.5 WATT THERMAL LIMITATION @ TC = 25°C 625 mW THERMAL LIMITATION @ TA = 25°C

–0.4

BF421

–20 –10

–0.2

VCE(sat) @ IC/IB = 10 mA

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

–5.0 –3.0

BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150°C –100 –200 –300 –5.0 –10 –20 –30 –50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages

Figure 5. Active Region — Safe Operating Area

2–250

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BF493S

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –350 –350 –6.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –250 Vdc) Emitter Cutoff Current (VEB = –6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = –250 Vdc, IE = 0, TA = 25°C) (VCB = –250 Vdc, IE = 0, TA = 100°C) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO — — –0.005 –1.0 –350 –350 –6.0 — — — — — –10 0.1 Vdc Vdc Vdc nAdc

mAdc mAdc

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–251

BF493S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base – Emitter On Voltage (IC = –20 mA, IB = –2.0 mA) hFE 25 40 VCE(sat) VBE(sat) — — — — –2.0 –2.0 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz) Common–Emitter Feedback Capacitance (VCB = –100 Vdc, IE = 0, f = 1.0 MHz) fT Cre 50 — — 1.6 MHz pF

2–252

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF493S
150 100 hFE, DC CURRENT GAIN +25°C 70 50 –55°C TJ = +125°C VCE = –10 Vdc

30 20 15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100 50 Cib C, CAPACITANCE (pF) 20 10 5.0

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 80 60 40 30 20

TJ = 25°C VCE = –20 Vdc

2.0 Ccb 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 VR, REVERSE VOLTAGE (VOLTS)

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

–1.0 IC, COLLECTOR CURRENT (mA)

–500 1.0 ms 1.0 s

100 µs

–0.8 V, VOLTAGE (VOLTS) VBE @ VCE = –10 V –0.6

–200 –100

MPSA93 –50
1.5 WATT THERMAL LIMITATION @ TC = 25°C 625 mW THERMAL LIMITATION @ TA = 25°C

–0.4

MPSA92

–20 –10

–0.2

VCE(sat) @ IC/IB = 10 mA

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

–5.0 –3.0

BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150°C –100 –200 –300 –5.0 –10 –20 –30 –50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages

Figure 5. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–253

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon Transistor
COLLECTOR 2,4 BASE 1 EMITTER 3

BF720T1
Motorola Preferred Device

NPN SILICON TRANSISTOR SURFACE MOUNT

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts °C °C
1 2 3

4

CASE 318E-04, STYLE 1 SOT–223 (TO-261AA)

DEVICE MARKING
DC

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction-to-Ambient(1) Symbol RθJA Max 83.3 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 µAdc, RBE = 2.7 kΩ) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 kΩ) (VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER — — 50 10 nAdc µAdc 300 300 300 5.0 — — — — — 10 Vdc Vdc Vdc Vdc nAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–254

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF720T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE VCE(sat) 50 — — 0.6 — Vdc

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 — — 1.6 MHz pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–255

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon Transistor
COLLECTOR 2,4 BASE 1 EMITTER 3

BF721T1
Motorola Preferred Device

PNP SILICON TRANSISTOR SURFACE MOUNT

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value – 300 –300 – 300 – 5.0 –100 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts °C °C
1 2 3

4

CASE 318E-04, STYLE 1 SOT–223 (TO-261AA)

DEVICE MARKING
DF

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 2.7 kΩ) Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = – 250 Vdc, RBE = 2.7 kΩ) (VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER — — –50 –10 nAdc µAdc – 300 –300 –300 – 5.0 — — — — — –10 Vdc Vdc Vdc Vdc nAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

2–256

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF721T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (VCE = –25 mAdc, VCE = –20 Vdc) Collector-Emitter Saturation Voltage (IC = – 30 mAdc, IB = – 5.0 mAdc) hFE 50 — —

VCE(sat)

– 0.8

Vdc

DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (VCE = – 10 Vdc, IC = –10 mAdc, f = 35 MHz) Feedback Capacitance (VCE = – 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 — — 1.6 MHz pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–257

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BF844

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 450 450 6.0 — — — — — — — 0.1 500 0.1 Vdc Vdc Vdc Vdc µAdc nAdc µAdc

v 300 ms, Duty Cycle v 2.0%.

2–258

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF844
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 20 VCE(sat) — — — VBE(sat) — 0.4 0.5 0.75 0.75 Vdc — 200 — — Vdc —

DYNAMIC CHARACTERISTICS
High Frequency Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Turn–On Time (VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc) Turn–Off Time (VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc) 1. Pulse Test: Pulse Width |hfe| Cob Cib ton toff 1.0 — — — — — 6.0 110 0.6 10 pF pF µs µs

v 300 ms, Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–259

BF844
160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 20 1.0 2.0 25°C TA = 125°C VCE = 10 V VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.5

0.4

IC = 1.0 mA

IC = 10 mA

IC = 50 mA

0.3 TA = 25°C 0.2

0.1

–55°C 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300

0 10

30

100

300 1.0 k 3.0 k IB, BASE CURRENT (µA)

10 k

50 k

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

1.0 TA = 25°C VBE(sat) @ IC/IB = 10

1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25°C TC = 25°C 100 µs

0.8 V, VOLTAGE (VOLTS)

1.0 s

0.6

VBE(on) @ VCE = 10 V

0.4

20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE ≤ 10% 2.0 20 50 10 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500

0.2

VCE(sat) @ IC/IB = 10

2.0 0 0.1 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0

Figure 3. On Voltages

Figure 4. Active Region Safe Operating Area

100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25°C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALL–SIGNAL CURRENT GAIN Cib

10

3.0 2.0 1.5 1.0 0.1

VCE = 10 V f = 10 MHz TA = 25°C

0.2 0.3

1.0 3.0 10 IC, COLLECTOR CURRENT (mA)

30

100

Figure 5. Capacitance

Figure 6. High Frequency Current Gain

2–260

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF844
10 5.0 +9.7 V PW = 50 µs DUTY CYCLE = 2.0% Vin

t, TIME ( µs)

2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25°C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 –4.0 V VCC RL Vout

0.2 0.1 1.0

3.0 10 30 IC, COLLECTOR CURRENT (mA)

CS ≤ 4.0 pF*

Figure 7. Turn–On Switching Times and Test Circuit

10 5.0 ts t, TIME ( µs) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25°C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf –11.4 V +10.7 V

Vin

PW = 50 µs DUTY CYCLE = 2.0%

0.2 0.1 1.0

VCC RL 100 Vin RB CS ≤ 4.0 pF* Vout

Figure 8. Turn–Off Switching Times and Test Circuit
* Total Shunt Capacitance or Test Jig and Connectors.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–261

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

VHF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER

BF959

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 100 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C
1 2 3

CASE 29–04, STYLE 21 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 20 30 3.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) hFE 35 40 VCE(sat) VBE(sat) — — — — — — — — 1.0 1.0 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) fT 700 600 Cre Nf — — — — 0.65 3.0 — — — — pF dB MHz

2–262

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF959
1000 500 hFE , DC CURRENT GAIN 200 200 100 100 50 40 30 20 10 mV 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 500

2

3

4 5

10

20

30

50

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 1. hFE at 10 V
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (GHz)

Figure 2. VCE(sat) at IC/IB = 10

2.0 1.8 C, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 1 2 3 4 5 10 20 2V 10 V 5V

1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 30 40 50 100 1 2 3 4 5 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Cre Cib Cob

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

10 5 4 3 2 Y11e (ms) 1 0.5 0.4 0.3 0.2 0.1 b11e Y22e ( µs) g11e VCE = 10 V

500 b22e 300 200 VCE = 10 V 100 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) g22e

Figure 5. Input Impedance at 30 MHz

Figure 6. Output Impedance at 30 MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–263

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

SOT-223 Package High Voltage Transistor
PNP Silicon
COLLECTOR 2,4 BASE 1 EMITTER 3

BSP16T1
Motorola Preferred Device

SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

4

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation, TA = 25°C (1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC IB PD Tstg TJ Value –300 –350 –6.0 –1000 –500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc mAdc Watts °C °C

1

2 3

CASE 318E-04, STYLE 1 TO-261AA

DEVICE MARKING
BT2

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83.3 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –50 mAdc, IB = 0, L = 25 mH) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Collector–Emitter Cutoff Current (VCE = –250 Vdc, IB = 0) Collector–Base Cutoff Current (VCB = –280 Vdc, IE = 0) Emitter–Base Cutoff Current (VEB = –6.0 Vdc, IC = 0) V(BR)CEO –300 V(BR)CBO –300 ICES — ICBO — IEBO — –20 –1.0 µAdc –50 µAdc — µAdc — Vdc Vdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–264

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BSP16T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (VCE = – 10 Vdc, IC = –50 mAdc) Collector-Emitter Saturation Voltage (IC = – 50 mAdc, IB = – 5.0 mAdc) hFE 30 VCE(sat) — – 2.0 120 Vdc —

DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product (VCE = – 10 Vdc, IC = –10 mAdc, f = 30 MHz) Collector–Base Capacitance (VCB = – 10 Vdc, IE = 0, f = 1.0 MHz) fT 15 Cobo — 15 — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–265

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon Epitaxial Transistor
This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Voltage: V(BR)CEO of 250 and 350 Volts. • The SOT-223 package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel T1 Configuration – 7 inch/1000 unit reel T3 Configuration – 13 inch/4000 unit reel • PNP Complement is BSP16T1
COLLECTOR 2,4

BSP19AT1
Motorola Preferred Device

SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

4

BASE 1 EMITTER 3

1

2 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 350 400 5.0 1000 0.8 6.4 – 65 to 150 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C

DEVICE MARKING
SP19A

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 156 260 10 Unit °C/W °C Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–266

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BSP19AT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO 350 ICBO — IEBO — 10 20 µAdc — nAdc Vdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0% hFE 40 fT 70 VCE(sat) — VBE(sat) — 1.3 0.5 Vdc — Vdc — MHz —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–267

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Small-Signal Darlington Transistor
This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 inch/1000 unit reel Use BSP52T3 to order the 13 inch/4000 unit reel • PNP Complement is BSP62T1
COLLECTOR 2,4 BASE 1

BSP52T1
Motorola Preferred Device

MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

4

1

2 3

EMITTER 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 0.8 6.4 – 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C

DEVICE MARKING
AS3

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance – Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 156 260 10 Unit °C/W °C Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–268

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BSP52T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICES — IEBO — 10 10 µAdc — µAdc — Vdc Vdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% hFE 1000 2000 VCE(sat) — VBE(on) — 1.9 1.3 Vdc — — Vdc —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–269

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PNP Small-Signal Darlington Transistor
This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BSP62T1 to order the 7 inch/1000 unit reel. Use BSP62T3 to order the 13 inch/4000 unit reel. • NPN Complement is BSP52T1
COLLECTOR 2,4 BASE 1

BSP62T1
Motorola Preferred Device

MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

4

1

2 3

EMITTER 3

CASE 318E-04, STYLE 1 TO-261AA

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 1.5 12 – 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C

DEVICE MARKING
BS3

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RθJA TL Max 83.3 260 10 Unit °C/W °C Sec

1. Device mounted on a FR–4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–270

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BSP62T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICBO — IEBO — 10 10 µAdc — µAdc — Vdc Vdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% hFE 1000 2000 VCE(sat) — VBE(on) — 1.9 1.3 Vdc — — Vdc —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–271

BSP62T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 25°C 10 V VCE = 2.0 V 5.0 V TA = 125°C

–55°C

Figure 1. DC Current Gain

10 |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = 5.0 V f = 100 MHz TA = 25°C

2.0 TA = 25°C

2.0 1.0

V, VOLTAGE (VOLTS)

4.0 3.0

1.6

VBE(sat) @ IC/IB = 100

1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4

0.4 0.2 0.1 1.0

2.0

5.0

10

20

50

100

200

500

1K

0 0.3 0.5

1.0

2.0 3.0 5.0

10

20 30

50

100

200 300

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 2. High Frequency Current Gain

Figure 3. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 1.8 1.6 IC = 10 mA 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K IB, BASE CURRENT (µA) 50 mA 100 mA 175 mA 300 mA TA = 25°C

Figure 4. Collector Saturation Region

2–272

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
PNP Silicon
1 BASE

COLLECTOR 3

BSS63LT1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage RBE = 10 kΩ Collector Current — Continuous Symbol VCEO VCER –110 IC –100 Value –100

2 EMITTER
1

3

Unit Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BSS63LT1 = T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc) Collector – Emitter Breakdown Voltage (IC = –10 µAdc, IE = 0, RBE = 10 kΩ) Collector – Base Breakdown Voltage (IE = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc) Collector Cutoff Current (VCB = –90 Vdc, IE = 0) Collector Cutoff Current (VCE = –110 Vdc, RBE = 10 kΩ) Emitter Cutoff Current (VEB = –6.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO –100 V(BR)CER –110 V(BR)CBO –110 V(BR)EBO –6.0 ICBO — ICER — IEBO — — –200 — –10 nAdc — –100 µAdc — — nAdc — — Vdc — — Vdc — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

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BSS63LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –25 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –25 mAdc, IB = –2.5 mAdc) Base – Emitter Saturation Voltage (IC = –25 mAdc, IB = –2.5 mAdc) hFE 30 30 VCE(sat) — VBE(sat) — — –900 — –250 mVdc — — — — mVdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –25 mAdc, VCE = –5.0 Vdc, f = 20 MHz) Case Capacitance (IE = IC = 0, VCB = –10 Vdc, f = 1.0 MHz) fT 50 CC — — 20 95 — pF MHz

2–274

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Driver Transistor
NPN Silicon
1 BASE

COLLECTOR 3

BSS64LT1

2 EMITTER

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 80 120 5.0 100 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BSS64LT1 = AM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 4.0 mAdc) Collector – Base Breakdown Voltage (IC = 100 mAdc) Emitter – Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCE = 90 Vdc) (TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 80 V(BR)CBO 120 V(BR)EBO 5.0 ICBO — — IEBO — 200 0.1 500 nAdc — µAdc — Vdc — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–275

BSS64LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) Collector – Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 µAdc) (IC = 50 mAdc, IB = 15 mAdc) Forward Base – Emitter Voltage HFE 20 VCE(sat) — — VBE(sat) — 0.15 0.2 — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) fT 60 Cob — 20 — pF MHz

2–276

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
NPN Silicon
1 BASE

COLLECTOR 3

BSV52LT1

2 EMITTER
1 2

3

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
BSV52LT1 = B2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 10 Vdc, IE = 0, TA = 125°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 12 ICBO — — 100 5.0 nAdc µAdc — Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–277

BSV52LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 300 µAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 25 40 25 VCE(sat) — — — VBE(sat) 700 — 850 1200 300 250 400 mVdc — 120 — mVdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) fT 400 Cobo — Cibo — 4.5 4.0 pF — pF MHz

SWITCHING CHARACTERISTICS
Storage Time (IC = IB1 = IB2 = 10 mAdc) Turn–On Time (VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc) Turn–Off Time (IC = 10 mAdc, IB = 3.0 mAdc) ts — ton — toff — 18 12 ns 13 ns ns

2–278

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Data Sheet

Bias Resistor Transistor

DTA114YE
3 2 1

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e SOT–416/SC–90 package which is ideal for low–power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2

CASE 463–01, STYLE 1 SOT–416/SC–90

OUT (3)

GND (2)

R1 = 10 kΩ R2 = 47 kΩ

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value – 50 –40 –100 Unit Vdc Vdc mAdc

DEVICE MARKING
DTA114YE = 59

THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) Input On Voltage (VO = –0.3 Vdc, IO = –1.0 mAdc) Output On Voltage (IO = –5.0 mAdc, II = –0.25 mAdc) Input Current (VI = –5.0 Vdc) Output Cutoff Current (VO = – 50 Vdc) DC Current Gain (VO = –5.0 Vdc, IO = –5.0 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min — –1.4 — — — 68 7.0 0.17 Typ — — — — — — 10 0.21 Max –0.3 — –0.3 –0.88 –500 — 13 0.25 Unit Vdc Vdc Vdc mAdc nAdc — kOhms

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–279

DTA114YE
TYPICAL ELECTRICAL CHARACTERISTICS

1 G I , DC CURRENT GAIN (NORMALIZED) IO/II = 10 VO(on), OUTPUT VOLTAGE (V) TA = –25°C 25°C 75°C

180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IO, OUTPUT CURRENT (mA) 80 90 100 VO(on) = 10 V TA = 75°C 25°C –25°C

0.1

0.01

0.001

0

20

40 60 IO, OUTPUT CURRENT (mA)

80

Figure 1. VO(on) versus IO

Figure 2. GI, DC Current Gain

100 TA = 75°C IO, OUTPUT CURRENT (mA) 25°C V I , INPUT VOLTAGE (VOLTS)

10 VO = 0.2 V 25°C TA = –25°C

–25°C 10

75°C 1

VO = 5 V 1 0 2 4 6 VI, INPUT VOLTAGE (V) 8 10 0.1 0 10 20 30 IO, OUTPUT CURRENT (mA) 40 50

Figure 3. Output Current versus Input Voltage

Figure 4. Input Voltage versus Output Current

4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C

+12 V

Typical Application for PNP BRTs

LOAD

Figure 5. Output Capacitance

Figure 6. Inexpensive, Unregulated Current Source

2–280

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Data Sheet

Bias Resistor Transistor

DTA143EE
3 2 1

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 1 4 3 E E i s h o u s e d i n t h e SOT–416/SC–90 package which is ideal for low–power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2

CASE 463–01, STYLE 1 SOT–416/SC–90

OUT (3)

GND (2)

R1 = 4.7 kΩ R2 = 4.7 kΩ

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value – 50 –30 –100 Unit Vdc Vdc mAdc

DEVICE MARKING
DTA143EE = 43

THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) Input On Voltage (VO = –0.3 Vdc, IO = –20 mAdc) Output On Voltage (IO = –10 mAdc, II = –0.5 mAdc) Input Current (VI = –5.0 Vdc) Output Cutoff Current (VO = – 50 Vdc) DC Current Gain (VO = –5.0 Vdc, IO = –10 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min — –3.0 — — — 20 3.3 0.8 Typ — — — — — — 4.7 1.0 Max –0.5 — –0.3 –1.8 –500 — 6.1 1.2 Unit Vdc Vdc Vdc mAdc nAdc — kOhms

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–281

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Data Sheet

Bias Resistor Transistor

DTC114TE
3 2 1

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114TE is housed in the SOT–416/SC–90 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1

CASE 463–01, STYLE 1 SOT–416/SC–90

OUT (3)

R1 = 10 kΩ

GND (2)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc

DEVICE MARKING
DTC114TE = 94

THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Base Breakdown Voltage (IC = 50 µAdc) Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc) Emitter–Base Breakdown Voltage (IE = 50 µAdc) Collector–Base Cutoff Current (VCB = 50 Vdc) Emitter–Base Cutoff Current (VEB = 4.0 Vdc) DC Current Gain (IC = 1.0 mAdc, VCE = 5 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Input Resistance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) R1 Min 50 50 5.0 — — 100 — 7.0 Typ — — — — — 300 — 10 Max — — — 500 500 600 0.3 13 Unit Vdc Vdc Vdc nAdc nAdc — Vdc kOhms

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

2–282

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Preliminary Data Sheet

Bias Resistor Transistor

DTC114YE
3 2 1

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114YE is housed in the SOT–416/SC–90 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2

CASE 463–01, STYLE 1 SOT–416/SC–90

OUT (3)

R1 = 10 kΩ R2 = 47 kΩ

GND (2)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value 50 40 100 Unit Vdc Vdc mAdc

DEVICE MARKING
DTC114YE = 69

THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc) Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc) Input Current (VI = 5.0 Vdc) Output Cutoff Current (VO = 50 Vdc) DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min — 1.4 — — — 68 7.0 0.17 Typ — — — — — — 10 0.21 Max 0.3 — 0.3 0.88 500 — 13 0.25 Unit Vdc Vdc Vdc mAdc nAdc — kOhms

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–283

DTC114YE
TYPICAL ELECTRICAL CHARACTERISTICS
1 VO(on), OUTPUT VOLTAGE (V) IO/II = 10 TA = –25°C 25°C 0.1 75°C G I , DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 VO(on) = 10 TA = 75°C 25°C –25°C

0.01

0.001

0

20

40 60 IO, OUTPUT CURRENT (mA)

80

1

2

4

6

8 10 15 20 40 50 60 70 80 IO, OUTPUT CURRENT (mA)

90 100

Figure 1. VO(on) versus IO

Figure 2. GI, DC Current Gain

100 TA = 75°C IO, OUTPUT CURRENT (mA) 25°C V I , INPUT VOLTAGE (VOLTS)

10 VO = 0.2 V TA = –25°C 25°C 75°C

–25°C 10

1

VO = 5 V 1 0 2 4 6 VI, INPUT VOLTAGE (V) 8 10

0.1

0

10

20 30 IO, OUTPUT CURRENT (mA)

40

50

Figure 3. Output Current versus Input Voltage

Figure 4. Input Voltage versus Output Current

4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C

Figure 5. Output Capacitance

2–284

Motorola Small–Signal Transistors, FETs and Diodes Device Data

DTC114YE
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V

ISOLATED LOAD

FROM µP OR OTHER LOGIC

Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

+12 V

VCC

OUT IN LOAD

Figure 7. Open Collector Inverter: Inverts the Input Signal

Figure 8. Inexpensive, Unregulated Current Source

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–285

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
6 5 4

1

2

3

CASE 419B–01, STYLE 1

MBT3904DW1T1
(3) (2) (1)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol VCEO VCBO VEBO IC 200 –200 Value 40 –40 60 –40 6.0 –5.0 Unit Vdc Vdc Vdc
(3) (4) (5) (6) Q1 Q2

MBT3906DW1T1
(2) (1)

Collector Current — Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP)

mAdc
Q1 Q2

THERMAL CHARACTERISTICS
Characteristic Total Package Dissipation(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW MBT3946DW1T1* °C/W °C
Q1 Q2 (3) (2) (1) (4) (5) (6)

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint.

DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46 MBT3906DW1T1 = A2

(4)

(5)

(6)

*Q1 same as MBT3906DW1T1 Q2 same as MBT3904DW1T1

2–286

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IBL MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) — — 50 –50 — — 50 –50 nAdc 6.0 –5.0 — — nAdc 60 –40 — — Vdc 40 –40 — — Vdc Vdc

ON CHARACTERISTICS (2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE MBT3904DW1T1 (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) MBT3904DW1T1 (NPN) — — — — VBE(sat) MBT3904DW1T1 (NPN) 0.65 — –0.65 — 0.85 0.95 –0.85 –0.95 0.2 0.3 –0.25 –0.4 Vdc — — 300 — — — — 300 — — Vdc —

MBT3906DW1T1 (PNP)

MBT3906DW1T1 (PNP)

MBT3906DW1T1 (PNP)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%. fT MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cobo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cibo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) — — 8.0 10.0 — — 4.0 4.5 pF 300 250 — — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–287

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hre MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hfe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hoe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) NF — — 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 — Symbol hie 1.0 2.0 10 12 X 10– 4 Min Max Unit kΩ

mmhos

Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3904DW1T1 (NPN) (VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3906DW1T1 (PNP)

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = – 0.5 Vdc) (VCC = –3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = –1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf — — — — — — — — 35 35 ns 35 35 200 225 ns 50 75

2–288

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)

DUTY CYCLE = 2% 300 ns

+3 V +10.9 V 10 k 275

10 < t1 < 500 ms DUTY CYCLE = 2%

t1

+3 V +10.9 V 275 10 k

0 – 0.5 V < 1 ns Cs < 4 pF* – 9.1 V′ < 1 ns 1N916 Cs < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo MBT3904DW1T1 (NPN) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MBT3904DW1T1 (NPN)

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–289

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
500 300 200 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 V 15 V 10 2.0 V 50 70 100 200 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time
500 300 200 ts ′ , STORAGE TIME (ns) 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

t′s = ts – 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 MBT3904DW1T1 (NPN) 10 20 40 100 IC = 100 mA IC = 1.0 mA

IC = 0.5 mA IC = 50 mA

MBT3904DW1T1 (NPN) 10 20 40 100

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Noise Figure 2–290

Figure 10. Noise Figure Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN) h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 MBT3904DW1T1 (NPN) h fe , CURRENT GAIN 200 hoe, OUTPUT ADMITTANCE (m mhos) 100 50 MBT3904DW1T1 (NPN)

20 10 5

100 70 50

2 1

30

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain
20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MBT3904DW1T1 (NPN) hre , VOLTAGE FEEDBACK RATIO (x 10 –4) 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

MBT3904DW1T1 (NPN)

2.0 1.0 0.5

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–291

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C MBT3904DW1T1 (NPN) VCE = 1.0 V

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3904DW1T1 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25°C

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0 V, VOLTAGE (VOLTS) 0.8

TJ = 25°C

1.0 MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C) 0.5 MBT3904DW1T1 (NPN) +25°C TO +125°C

qVC FOR VCE(sat)
0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C

VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

0

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

Figure 18. Temperature Coefficients

2–292

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP)

3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns

3V 275

Cs < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 19. Delay and Rise Time Equivalent Test Circuit

Figure 20. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MBT3906DW1T1 (PNP) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 MBT3906DW1T1 (PNP)

QT QA

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)

20 30 40

1.0

2.0 3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

Figure 21. Capacitance
500 300 200 100 70 50 30 20 10 7 5 MBT3906DW1T1 (PNP) IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5

Figure 22. Charge Data
MBT3906DW1T1 (PNP) IC/IB = 20 VCC = 40 V IB1 = IB2

TIME (ns)

tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 23. Turn – On Time

Figure 24. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–293

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 MBT3906DW1T1 (PNP) 20 40 100 0 0.1 0.2 IC = 50 mA IC = 100 mA MBT3906DW1T1 (PNP) 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 IC = 1.0 mA

NF, NOISE FIGURE (dB)

4.0

3.0

2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4

1.0

0 0.1

1.0 2.0 4.0 10 f, FREQUENCY (kHz)

Figure 25.

Figure 26.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) MBT3906DW1T1 (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 MBT3906DW1T1 (PNP)

100 70 50

10 7

30

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

5

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 27. Current Gain
hre , VOLTAGE FEEDBACK RATIO (x 10 –4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 MBT3906DW1T1 (PNP) 10 7.0 5.0 3.0 2.0

Figure 28. Output Admittance

MBT3906DW1T1 (PNP)

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 29. Input Impedance 2–294

Figure 30. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C +25°C – 55°C VCE = 1.0 V

1.0 0.7 0.5 0.3 MBT3906DW1T1 (PNP) 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 31. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3906DW1T1 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA TJ = 25°C 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 32. Collector Saturation Region
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 MBT3906DW1T1 (PNP) +25°C TO +125°C – 55°C TO +25°C

qVC FOR VCE(sat)

+25°C TO +125°C – 55°C TO +25°C

0.6 MBT3906DW1T1 (PNP) 0.4 VCE(sat) @ IC/IB = 10

0.2

qVB FOR VBE(sat)

0

1.0

2.0

50 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100

200

0

20

40

60 80 100 120 140 IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 33. “ON” Voltages

Figure 34. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–295

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Chopper Transistor
PNP Silicon
COLLECTOR 3 1 BASE

MMBT404ALT1
Motorola Preferred Device

3

2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –35 –40 –25 –150 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBT404ALT1 = 2N

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,** TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature * FR–5 = 1.0 x 0.75 x 0.062 in. ** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO

–35 –40 –25 — —

— — — — —

— — — –100 –100

Vdc Vdc Vdc nAdc nAdc

2–296

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT404ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –12 mAdc, VCE = –0.15 Vdc) Collector–Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) Base–Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) hFE VCE(sat) — — VBE(sat) — — — — –0.85 –1.0 — — –0.15 –0.2 Vdc 100 — 400 — Vdc

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — — 20 pF

SWITCHING CHARACTERISTICS
Delay time (VCC = –10 Vdc, IC = –10 mAdc) (Figure 1) Rise Time (IB1 = –1.0 mAdc, VBE(off) = –14 Vdc) Storage Time (VCC = –10 Vdc, IC = –10 mAdc) Fall Time (IB1 = IB2 = –1.0 mAdc) (Figure 1) td tr ts tf — — — — 43 180 675 160 — — — — ns ns ns ns

VBB RBB 1.0 k 0.1 µF Vin 51 RB 10 k

VCC = –10 V

1.0 k TO SCOPE

Vin (Volts) ton, td, tr toff, ts and tf –12 +20.6

VBB (Volts) +1.4 –11.6

Voltages and resistor values shown are for IC = 10 mA, IC/IB = 10 and IB1 = IB2

Figure 1. Switching Time Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–297

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

VHF/UHF Transistor

NPN Silicon
1 BASE

MMBT918LT1
COLLECTOR 3

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50

2 EMITTER Unit Vdc Vdc Vdc mAdc

1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT918LT1 = M3B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 — — — — 50 Vdc Vdc Vdc nAdc

2–298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT918LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 20 — — — 0.4 1.0 — Vdc Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 Ω, f = 60 MHz) (Figure 1) Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Common–Emitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) fT Cobo — — Cibo NF Pout Gpe — — 30 11 3.0 1.7 2.0 6.0 — — pF dB mW dB 600 — MHz pF

VBB EXTERNAL 100 k

VCC

1000 pF BYPASS

0.018 µF 0.018 µF 3 0.018 µF NF TEST CONDITIONS IC = 1.0 mA VCE = 6.0 VOLTS RS = 50 Ω f = 60 MHz Gpe TEST CONDITIONS IC = 6.0 mA VCE = 12 VOLTS f = 200 MHz C G 0.018 µF 50 Ω

RF VM

Figure 1. NF, Gpe Measurement Circuit 20–200

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–299

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low Saturation Voltage PNP Silicon Driver Transistors
Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. • Low VCE(sat), < 0.1 V at 50 mA Applications • LCD Backlight Driver • Annunciator Driver • General Output Device Driver MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 Unit Vdc Vdc Vdc mAdc

MMBT1010LT1 MSD1010T1
Motorola Preferred Devices

PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT

3 1 2

CASE 318–08, STYLE 6 SOT-23

3 2 1

DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP

CASE 318D–04, STYLE 1 SC-59

THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 250 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C BASE EMITTER COLLECTOR

ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 µA, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Min 15 5.0 — — 300 — — — Max — — 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc µA µA — Vdc

Base-Emitter Saturation Voltage

VBE(sat)(2)

Vdc

(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–300

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Preliminary Information

General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. COLLECTOR
3

MMBT2222AWT1
Motorola Preferred Device

3

1 BASE 2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc

CASE 419 – 02, STYLE 3 SOT– 323/SC – 70

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

DEVICE MARKING
MMBT2222AWT1 = 1P

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 — — — — — 20 10 Vdc Vdc Vdc nAdc nAdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–301

MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 35 50 75 100 40 VCE(sat) — — VBE(sat) 0.6 — 1.2 2.0 0.3 1.0 Vdc — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 — — 0.25 — 75 25 — — 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k ohms X 10– 4 —

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = – 0.5 Vdc, ( IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, ( IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 10 ns 25 225 ns 60

v 300 ms, Duty Cycle v 2.0%.

2–302

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT2222LT1 MMBT2222ALT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0

2 EMITTER
1

3

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 40 60 75 5.0 6.0 — — — — — — — — — — — — — 10 0.01 0.01 10 10 100 20 Vdc Vdc Vdc nAdc µAdc

IEBO IBL

nAdc nAdc 

Preferred devices are Motorola recommended choices for future use and best overall value. 

0.062 in.   0.024 in. 99.5% alumina.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–303

MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A — 0.6 — — 1.3 1.2 2.6 2.0 — — — — 0.4 0.3 1.6 1.0 Vdc — — — — 300 — — — Vdc —

MMBT2222A only

MMBT2222 MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222 MMBT2222A hie MMBT2222A MMBT2222A hre MMBT2222A MMBT2222A hfe MMBT2222A MMBT2222A hoe MMBT2222A MMBT2222A rb, Cc MMBT2222A NF MMBT2222A — 4.0 — 150 dB 5.0 25 35 200 ps 50 75 300 375 — — 8.0 4.0 — 2.0 0.25 8.0 1.25 X 10– 4 fT MMBT2222 MMBT2222A Cobo — Cibo — — 30 25 kΩ 8.0 pF 250 300 — — pF MHz

mmhos

SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = – 0.5 Vdc, ( IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, ( IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 10 ns 25 225 ns 60

3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity.

v

v

2–304

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2222LT1 MMBT2222ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 –2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% + 30 V 200

–4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70

100

200

300

500 700 1.0 k

Figure 3. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.8

0.6

0.4

0.2

0 0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3 0.5 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

10

20

30

50

Figure 4. Collector Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–305

MMBT2222LT1 MMBT2222ALT1
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

Figure 5. Turn – On Time

Figure 6. Turn – Off Time

10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE

10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA 100 µA 500 µA 1.0 mA

6.0

6.0

4.0

4.0

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50 100

0 50

100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 8. Source Resistance Effects

30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1

500 VCE = 20 V TJ = 25°C

300 200

100 70 50 1.0

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)

20 30

50

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 9. Capacitances

Figure 10. Current–Gain Bandwidth Product

2–306

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2222LT1 MMBT2222ALT1
1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5

0.2

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–307

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT2369LT1 MMBT2369ALT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200

2 EMITTER Unit Vdc Vdc Vdc Vdc mAdc
1 2

3

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3) (IC = 10 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO 15 V(BR)CES 40 V(BR)CBO 40 V(BR)EBO 4.5 ICBO — — ICES MMBT2369A — — 0.4 — — 0.4 30 — — — — — — — —

Vdc Vdc Vdc Vdc µAdc

µAdc  

 

2–308

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A VCE(sat) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A VBE(sat) MMBT2369A MMBT2369A MMBT2369A MMBT2369A 0.7 — — — — — — — 0.85 1.02 1.15 1.60 — — — — — — — — — — 0.25 0.20 0.30 0.25 0.50 Vdc 40 — 40 20 30 20 20 — — — — — — — 120 120 — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo — hfe 5.0 — — — 4.0 — pF

SWITCHING CHARACTERISTICS
Storage Time (IB1 = IB2 = IC = 10 mAdc) Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 3. Pulse Test: Pulse Width ts — ton — toff — 10 18 8.0 12 ns 5.0 13 ns ns

v 300 ms, Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–309

MMBT2369LT1 MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
+10.6 V 0 –1.5 V t1 3V 270 Ω +10.75 V 0 –9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270 Ω

< 1 ns

3.3 k

Cs* < 4 pF

3.3 k

Cs* < 4 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

Figure 1. ton Circuit — 10 mA

Figure 3. toff Circuit — 10 mA

+10.8 V –2 V 0

t1

10 V

95 Ω +11.4 V 0 –8.6 V

t1

10 V

95 Ω

< 1 ns

1k

Cs* < 12 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

< 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 µs DUTY CYCLE = 2%

1k 1N916

Cs* < 12 pF

Figure 2. ton Circuit — 100 mA

Figure 4. toff Circuit — 100 mA

* Total shunt capacitance of test jig and connectors. TURN–ON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 kΩ 3.3 k 0.0023 µF 0.005 µF VBB + – 0.1 µF 50 Ω 0.0023 µF 0.005 µF 0.1 µF +V =3V – CC 220 Ω 0.1 µF Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 Ω RISE TIME = 1 ns TURN–OFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = –15 V

PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 Ω PW ≥ 300 ns DUTY CYCLE < 2%

50 Ω

Figure 5. Turn–On and Turn–Off Time Test Circuit

6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25°C LIMIT TYPICAL SWITCHING TIMES (nsec)

100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V βF = 10 VCC = 10 V VOB = 2 V

20

2

td

1 0.1

2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100

Figure 6. Junction Capacitance Variations

Figure 7. Typical Switching Times

2–310

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2369LT1 MMBT2369ALT1
500 VCC = 10 V 25°C 100°C QT, βF = 10 QT, βF = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V ∆V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST

200 CHARGE (pC)

t1

3V 10 pF MAX

Cs* < 4 pF

PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2%

Figure 9. QT Test Circuit

Figure 8. Maximum Charge Data

C < COPT C COPT TIME

C=0

+6 V 0 –4 V

t1

10 V

980

< 1 ns

500

Cs* < 3 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

Figure 10. Turn–Off Waveform
VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 11. Storage Time Equivalent Test Circuit

1.0 TJ = 25°C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA

0.8

0.4

0.2 0.02

0.05

0.1

0.2

0.5 1 IB, BASE CURRENT (mA)

2

5

10

20

Figure 12. Maximum Collector Saturation Voltage Characteristics

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–311

MMBT2369LT1 MMBT2369ALT1
200 hFE , MINIMUM DC CURRENT GAIN TJ = 125°C 100 75°C 25°C –15°C 50 –55°C VCE = 1 V

TJ = 25°C and 75°C

20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100

Figure 13. Minimum Current Gain Characteristics

1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 βF = 10 TJ = 25°C COEFFICIENT (mV/ °C) MAX VBE(sat)

1.0 0.5 0 –0.5 –1.0 –1.5 θVB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 –2.0 –2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100
θVC θVB

θVC for VCE(sat)
APPROXIMATE DEVIATION FROM NOMINAL –55°C to +25°C ±0.15 mV/°C ±0.4 mV/°C 25°C to 125°C ±0.15 mV/°C ±0.3 mV/°C

(25°C to 125°C) (–55°C to +25°C)

MIN VBE(sat)

(–55°C to +25°C) (25°C to 125°C)

Figure 14. Saturation Voltage Limits

Figure 15. Typical Temperature Coefficients

2–312

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low Noise Transistor
NPN Silicon
1 BASE

COLLECTOR 3

MMBT2484LT1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 60 60 6.0 50

2 EMITTER
1

3

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT2484LT1 = 1U

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.0 ICBO — — IEBO — 10 10 10 nAdc µAdc nAdc — — Vdc — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–313

MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) hFE 250 — VCE(sat) — VBE(on) — 0.95 0.35 Vdc — 800 Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo — Cibo — NF — 3.0 6.0 dB 6.0 pF pF

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–314

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2484LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz

10 7.0 5.0

300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

100 kHz 5.0 10

Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB)

Figure 3. Effects of Collector Current

BANDWIDTH = 1.0 Hz IC = 10 mA

BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA

8.0

500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB)

Figure 5. Wideband Noise Figure

IC = 10 mA

3.0 mA 1.0 mA 300 µA

12

8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–315

MMBT2484LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C

0.02

0.03

0.05

0.1

0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA)

1.0

2.0

3.0

5.0

10

Figure 8. DC Current Gain

1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C

– 0.4 – 0.8

0.6

VBE @ VCE = 5.0 V

– 1.2 TJ = 25°C to 125°C

0.4

– 1.6

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

– 2.0

– 55°C to 25°C

– 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50 100

Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 10. Temperature Coefficients

8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C

500

300 200

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C

1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

Figure 11. Capacitance

Figure 12. Current–Gain — Bandwidth Product

2–316

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Preliminary Information

General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.
COLLECTOR 3

MMBT2907AWT1
Motorola Preferred Device

3

1 BASE 2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –60 –60 –5.0 –600 Unit Vdc Vdc Vdc mAdc

CASE 419 – 02, STYLE 3 SOT– 323/SC – 70

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

DEVICE MARKING
MMBT2907AWT1 = 2F

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX –60 –60 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc

v

v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–317

MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (1) (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (IC = –500 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) HFE 75 100 100 100 50 VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — — 8.0 30 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Storage Time Fall Time Turn–Off Time 1. Pulse Test: Pulse Width (VCC = –6.0 6 0 Vd Vdc, IC = –150 150 mAdc, Ad IB1 = IB2 = 15 mAdc) (VCC = –30 30 Vd Vdc, IC = –150 150 mAdc, IB1 = –15 15 mAdc) ton td tr ts tf toff — — — — — — 45 10 40 ns 80 30 100

v 300 ms, Duty Cycle v 2.0%.

2–318

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
1 BASE

COLLECTOR 3

MMBT2907LT1 MMBT2907ALT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600

2 EMITTER
1

3

2907A –60

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO — — — — — –0.020 –0.010 –20 –10 –50 nAdc –40 –60 –60 –5.0 — — — — — –50 Vdc Vdc nAdc µAdc Vdc  

 

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–319

MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc 35 75 50 100 75 100 — 100 30 50 — — — — — — — 300 — — Vdc —

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –150 mAdc, VCE = –10 Vdc) (3)

(IC = –500 mAdc, VCE = –10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo — Cibo — 30 8.0 pF — pF MHz

SWITCHING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 6 0 Vd Vdc, IC = –150 150 mAdc, Ad IB1 = IB2 = –15 15 mAdc) (VCC = –30 30 Vdc, Vd IC = –150 150 mAdc, Ad IB1 = –15 15 mAdc) ton td tr toff ts tf — — — — — — 45 10 40 100 80 30 ns ns

3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –16 V 200 ns 50 1.0 k INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –30 V 200 ns

v

v

–30 V 200

+15 V

–6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

1.0 k 1.0 k 50

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

1N916

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

2–320

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT2907LT1 MMBT2907ALT1
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C

–0.2 –0.3

–0.5 –0.7 –1.0

–2.0

–3.0

–5.0 –7.0

–10

–20

–30

–50 –70 –100

–200 –300

–500

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0

–0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA

–0.4

–0.2

0 –0.005

–0.01

–0.02 –0.03 –0.05 –0.07 –0.1

–0.2

–0.3 –0.5 –0.7 –1.0 IB, BASE CURRENT (mA)

–2.0

–3.0

–5.0 –7.0 –10

–20 –30

–50

Figure 4. Collector Saturation Region

300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT tr

500 VCC = –30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

–20 –30 –50 –70 –100 –200 –300 –500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–321

MMBT2907LT1 MMBT2907ALT1
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0

6.0

6.0

4.0

4.0

IC = –50 µA –100 µA –500 µA –1.0 mA

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50

100

0

50

100

200

500 1.0 k 2.0 k

5.0 k 10 k

20 k

50 k

f, FREQUENCY (kHz)

Rs, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 8. Source Resistance Effects

30 20 C, CAPACITANCE (pF) Ceb

400 300 200

10 7.0 5.0 3.0 2.0 –0.1 Ccb

100 80 60 40 30 20 –1.0 –2.0

VCE = –20 V TJ = 25°C

–0.2 –0.3 –0.5

–1.0

–2.0 –3.0 –5.0

–10

–20 –30

–5.0

–10

–20

–50

–100 –200

–500 –1000

REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances

Figure 10. Current–Gain — Bandwidth Product

–1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) VBE(on) @ VCE = –10 V

+0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE

–0.6

–0.4

–0.2

0 –0.1 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20

–50 –100 –200

–500

–5.0 –10 –20

–50 –100 –200 –500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage

Figure 12. Temperature Coefficients

2–322

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBT3640LT1
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –12 –12 –4.0 –80

2 EMITTER
1

3

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT3640LT1 = 2J

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –6.0 Vdc, VBE = 0, TA = 65°C) Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IB — –0.01 –1.0 –10 nAdc –12 –12 –12 –4.0 — — — — Vdc Vdc Vdc Vdc µAdc  

0.062 in.   0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–323

MMBT3640LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = –10 mAdc, VCE = –0.3 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE 30 20 VCE(sat) — — — VBE(sat) –0.75 –0.8 — –0.95 –1.0 –1.5 –0.2 –0.6 –0.25 Vdc 120 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT 500 Cobo — Cibo — 3.5 3.5 pF — pF MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = –6.0 Vdc, IC = –50 mAdc, ( VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc) (VCC = –6.0 Vdc, IC = –50 mAdc, ( IB1 = IB2 = –5.0 mAdc) td tr ts tf ton — — toff — — 35 75 25 60 ns — — — — 10 ns 30 20 ns 12 ns

Turn–On Time (VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc) Turn–Off Time (VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = IB2 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc) 3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

VBB = +1.9 V VCC = –6.0 V 1.0 k 0 0.1 µF 680 110 Vout 5.0 V

VBB = –6.0 V 5.0 k 0.1 µF 5.0 k

VCC = 1.5 V 130 Vout

Vin –6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 5.0 mA.

Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 0.5 mA.

Figure 1.

Figure 2.

2–324

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3640LT1
200 VCE = –1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 –0.2 10 –0.1 –0.2 –5.0 –10 –20 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mA) –50 –100 0 –0.1 –0.2 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 TJ = 125°C V, VOLTAGE (VOLTS) 25°C –55°C –1.4 –1.2 –1.0 –0.8 VBE(on) @ VCE = –1.0 V –0.6 –0.4 TJ = 25°C VBE(sat) @ IC/IB = 10

Figure 3. DC Current Gain

Figure 4. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 IC = –1.0 mA –0.6 –5.0 mA –20 mA –80 mA θV, TEMPERATURE COEFFICIENT (mV/ °C)

+0.5

*APPLIES FOR IC/IB ≤ hFE/4 RθVC for VCE(sat)

25°C to 125°C –55°C to 25°C

0

–0.5

–0.4

–1.0 25°C to 125°C RθVB for VBE –2.0 –0.1 –0.2 –55°C to 25°C –50 –100

–0.2

–1.5

0 –0.01 –0.02

–0.05 –0.1 –0.2 –0.5 –1.0 IB, BASE CURRENT (mA)

–2.0

–5.0

–10

–0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

Figure 5. Collector Saturation Region
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 6. Temperature Coefficients

2000 TJ = 25°C f = 100 MHz 1000 800 600 400 –1.0 V VCE = –10 V C, CAPACITANCE (pF)

5.0 TJ = 25°C 3.0 2.0 Cobo Cibo 1.0 0.7

200 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

0.5 –0.2 –0.3

–0.5 –0.7 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Current–Gain — Bandwidth Product

Figure 8. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–325

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE

MMBT3904LT1
Motorola Preferred Device

3

2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT3904LT1 = 1AM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc  

 

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–326

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3904LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 40 70 100 60 30 VCE(sat) — — VBE(sat) 0.65 — 0.85 0.95 0.2 0.3 Vdc — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 — — 1.0 0.5 100 1.0 — — 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10– 4 —

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = – 0.5 Vdc, ( IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, ( IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf — — — — 35 ns 35 200 ns 50

v 300 ms, Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–327

MMBT3904LT1
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V′ < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

2–328

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3904LT1
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time
500 300 200 ts ′ , STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

t′s = ts – 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA

SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA

IC = 0.5 mA IC = 50 mA

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9.

Figure 10.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–329

MMBT3904LT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50

h fe , CURRENT GAIN

200

20 10 5

100 70 50

2 1

30

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain
20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

2.0 1.0 0.5

h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 5.0 10

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1.0 V

h FE, DC CURRENT GAIN (NORMALIZED)

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

2–330

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3904LT1
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C)

1.0 0.5 +25°C TO +125°C

qVC FOR VCE(sat)
0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

0

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

Figure 18. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–331

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

NPN MMBT3904WT1 PNP MMBT3906WT1
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 –40 60 –40 6.0 –5.0 200 –200 Unit Vdc Vdc Vdc
3

Collector Current — Continuous MMBT3904WT1 MMBT3906WT1

mAdc
1 2

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

CASE 419–02, STYLE 3 SOT–323/SC–70

DEVICE MARKING
MMBT3904WT1 = AM MMBT3906WT1 = 2A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) V(BR)CEO MMBT3904WT1 MMBT3906WT1 V(BR)CBO MMBT3904WT1 MMBT3906WT1 V(BR)EBO MMBT3904WT1 MMBT3906WT1 IBL MMBT3904WT1 MMBT3906WT1 ICEX MMBT3904WT1 MMBT3906WT1 — — 50 –50 — — 50 –50 nAdc 6.0 –5.0 — — nAdc 60 –40 — — Vdc 40 –40 — — Vdc Vdc

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

2–332

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN MMBT3904WT1 PNP MMBT3906WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE MMBT3904WT1 40 70 100 60 30 60 80 100 60 30 VCE(sat) MMBT3904WT1 MMBT3906WT1 VBE(sat) MMBT3904WT1 MMBT3906WT1 0.65 — –0.65 — 0.85 0.95 –0.85 –0.95 — — — — 0.2 0.3 –0.25 –0.4 Vdc — — 300 — — — — 300 — — Vdc —

MMBT3906WT1

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) fT MMBT3904WT1 MMBT3906WT1 Cobo MMBT3904WT1 MMBT3906WT1 Cibo MMBT3904WT1 MMBT3906WT1 hie MMBT3904WT1 MMBT3906WT1 hre MMBT3904WT1 MMBT3906WT1 hfe MMBT3904WT1 MMBT3906WT1 hoe MMBT3904WT1 MMBT3906WT1 NF MMBT3904WT1 MMBT3906WT1 — — 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 — 1.0 2.0 10 12 X 10– 4 — — 8.0 10.0 kΩ — — 4.0 4.5 pF 300 250 — — pF MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = – 0.5 Vdc) (VCC = –3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = –1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 td tr ts tf — — — — — — — — 35 35 35 35 200 225 50 75 ns

ns

v 300 ms, Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–333

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1

DUTY CYCLE = 2% 300 ns

+3 V +10.9 V 10 k 275

10 < t1 < 500 ms DUTY CYCLE = 2%

t1

+3 V +10.9 V 275 10 k

0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V < 1 ns 1N916 CS < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 MMBT3904WT1 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MMBT3904WT1

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

2–334

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1
500 300 200 100 70 50 30 20 10 7 5 MMBT3904WT1 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 200 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

40 V 15 V 2.0 V 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time
500 300 200 ts ′ , STORAGE TIME (ns) 100 70 50 30 20 10 7 5 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

t′s = ts – 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

IC/IB = 20 IC/IB = 10

100 70 50 30 20 10 7 5 1.0 IC/IB = 10

MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 MMBT3904WT1 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 MMBT3904WT1 20 40 100 IC = 1.0 mA

SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA

IC = 0.5 mA IC = 50 mA IC = 100 mA

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Noise Figure

Figure 10. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–335

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1 h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) MMBT3904WT1 200 h fe , CURRENT GAIN 100 50 MMBT3904WT1

20 10 5

100 70 50

2 1

30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MMBT3904WT1 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

MMBT3904WT1

2.0 1.0 0.5

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

2–336

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1 TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C MMBT3904WT1 VCE = 1.0 V

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25°C

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MMBT3904WT1 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C)

1.0 MMBT3904WT1 0.5 +25°C TO +125°C

qVC FOR VCE(sat)
0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

0

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

Figure 18. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–337

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1
3V + 9.1 V 275 < 1 ns 10 k CS < 4 pF* +10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 0 10 k 1N916 CS < 4 pF* < 1 ns 275 3V

* Total shunt capacitance of test jig and connectors

Figure 19. Delay and Rise Time Equivalent Test Circuit

Figure 20. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MMBT3906WT1 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 QA 100 1.0 0.1 70 50 VCC = 40 V IC/IB = 10 QT MMBT3906WT1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 21. Capacitance

Figure 22. Charge Data

500 300 200 100 TIME (ns) 70 50 30 20 10 7 5 tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) MMBT3906WT1 IC/IB = 10

500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 MMBT3906WT1 IC/IB = 20 VCC = 40 V IB1 = IB2

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 23. Turn – On Time 2–338

Figure 24. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1 TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 12 f = 1.0 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 MMBT3906WT1 20 40 100 0 0.1 0.2 0.4 IC = 50 mA IC = 100 mA MMBT3906WT1 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ) 40 100 IC = 1.0 mA

3.0

1.0

SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz)

0 0.1

Figure 25.

Figure 26.

h PARAMETERS
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
300 MMBT3906WT1 200 hfe , CURRENT GAIN hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 MMBT3906WT1

100 70 50

10 7.0 5.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

Figure 27. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0

Figure 28. Output Admittance

MMBT3906WT1

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0

10

Figure 29. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 30. Voltage Feedback Ratio 2–339

NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1 STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C +25°C – 55°C VCE = 1.0 V

1.0 0.7 0.5 0.3 MMBT3906WT1 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 31. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0 MMBT3906WT1 0.8 IC = 1.0 mA 0.6 10 mA 30 mA 100 mA TJ = 25°C

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 32. Collector Saturation Region

TJ = 25°C 0.8 V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.0

1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 MMBT3906WT1 +25°C TO +125°C

qVC FOR VCE(sat)

+25°C TO +125°C – 55°C TO +25°C

0.6 MMBT3906WT1 0.4

qVS FOR VBE(sat)

0.2

– 55°C TO +25°C

VCE(sat) @ IC/IB = 10

0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200

0

20

40

60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)

180 200

Figure 33. “ON” Voltages

Figure 34. Temperature Coefficients

2–340

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBT3906LT1
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –200

2 EMITTER
1

3

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT3906LT1 = 2A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBL — ICEX — –50 –50 — — —

Vdc Vdc Vdc nAdc nAdc  

 

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–341

MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) HFE 60 80 100 60 30 VCE(sat) — — VBE(sat) –0.65 — –0.85 –0.95 –0.25 –0.4 Vdc — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT 250 Cobo — Cibo — hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF — 4.0 60 dB 400 10 — 12 X 10– 4 10 kΩ 4.5 pF — pF MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, ( IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc, ( IB1 = IB2 = –1.0 mAdc) td tr ts tf — — — — 35 ns 35 225 ns 75

v 300 ms, Duty Cycle v 2.0%.
3V

3V +9.1 V 275 < 1 ns 275 10 k 0 CS < 4 pF* 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V CS < 4 pF*

< 1 ns +0.5 V 10 k

10.6 V

300 ns DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

2–342

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10

QT QA

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)

20 30 40

1.0

2.0 3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200

Figure 4. Charge Data
VCC = 40 V IB1 = IB2 IC/IB = 20 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time

Figure 6. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–343

MMBT3906LT1
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA

NF, NOISE FIGURE (dB)

4.0

3.0

2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100

1.0

0 0.1

0.1

0.2

0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS)

40

100

Figure 7.

Figure 8.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20

h fe , DC CURRENT GAIN

200

100 70 50

10 7

30

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

5

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0

Figure 10. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

2–344

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
2.0

h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C +25°C – 55°C

VCE = 1.0 V

1.0 0.7 0.5 0.3 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 14. Collector Saturation Region
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 – 0.5 +25°C TO +125°C – 1.0 – 1.5 – 2.0 – 55°C TO +25°C

qVC FOR VCE(sat)

+25°C TO +125°C – 55°C TO +25°C

0.6

0.4 VCE(sat) @ IC/IB = 10

0.2

qVB FOR VBE(sat)

0

1.0

2.0

50 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100

200

0

20

40

60 80 100 120 140 IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 15. “ON” Voltages

Figure 16. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–345

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
NPN Silicon
COLLECTOR 3 1 BASE

MMBT4401LT1
Motorola Preferred Device

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600

2 EMITTER Unit Vdc Vdc Vdc mAdc

1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT4401LT1 = 2X

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV — ICEX — 0.1 0.1 µAdc — µAdc — Vdc — Vdc Vdc  

 

Preferred devices are Motorola recommended choices for future use and best overall value.

2–346

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT4401LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 20 40 80 100 40 VCE(sat) — — VBE(sat) 0.75 — 0.95 1.2 0.4 0.75 Vdc — — — 300 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 250 Ccb — Ceb — hie 1.0 hre 0.1 hfe 40 hoe 1.0 30 500 8.0 — 15 X 10– 4 30 kΩ 6.5 pF — pF MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = 30 Vdc, VEB = 2.0 Vdc, ( IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, ( IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30

v 300 ms, Duty Cycle v 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ < 2.0 ns 200 Ω +16 V 0 CS* < 10 pF –14 V < 20 ns 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ + 30 V 200 Ω

CS* < 10 pF

– 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–347

MMBT4401LT1
TRANSIENT CHARACTERISTICS
25°C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT

VCC = 30 V IC/IB = 10

QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10

100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Rise and Fall Times

300 200 t s′, STORAGE TIME (ns) ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)

100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2

100 70 50

10 7.0

30

5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

2–348

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT4401LT1
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA

8.0 NF, NOISE FIGURE (dB)

6.0

6.0

4.0

4.0

2.0 0 0.01 0.02 0.05 0.1 0.2

2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

Figure 10. Source Resistance Effects

h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C selected from the MMBT4401LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly numbered curves hfe and other “h” parameters for this series of transistors. To on each graph. obtain these curves, a high–gain and a low–gain unit were
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

20 k 10 k 5.0 k

100 70 50 30 20 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

2.0 k 1.0 k 500

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain
10 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50

Figure 12. Input Impedance

MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

20 10 5.0 2.0 1.0 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 14. Output Admittance 2–349

MMBT4401LT1
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C 25°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 15. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C

0.8

0.6

IC = 1.0 mA

10 mA

100 mA

500 mA

0.4

0.2

0 0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0 7.0

10

20

30

50

Figure 16. Collector Saturation Region

1.0 TJ = 25°C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C)

+ 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE @ VCE = 10 V

0.4

0.2

VCE(sat) @ IC/IB = 10

qVB for VBE
0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

Figure 17. “On” Voltages

Figure 18. Temperature Coefficients

2–350

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBT4403LT1
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –600

2 EMITTER
1

3

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT4403LT1 = 2T

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) Base Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) Collector Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBEV — ICEX — –0.1 –0.1 µAdc — µAdc — Vdc — Vdc Vdc  

 

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–351

MMBT4403LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc)(3) (IC = –500 mAdc, VCE = –2.0 Vdc)(3) Collector – Emitter Saturation Voltage(3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE 30 60 100 100 20 VCE(sat) — — VBE(sat) –0.75 — –0.95 –1.3 –0.4 –0.75 Vdc — — — 300 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) fT 200 Ccb — Ceb — hie 1.5 hre 0.1 hfe 60 hoe 1.0 100 500 8.0 — 15 X 10– 4 30 kΩ 8.5 pF — pF MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –30 Vdc, VEB = –2.0 Vdc, ( IC = –150 mAdc, IB1 = –15 mAdc) (VCC = –30 Vdc, IC = –150 mAdc, ( IB1 = IB2 = –15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30

v 300 ms, Duty Cycle v 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V < 2 ns +2 V 0 – 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 –16 V < 20 ns 1.0 kΩ – 30 V 200 Ω

CS* < 10 pF

1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

2–352

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT4403LT1
TRANSIENT CHARACTERISTICS
25°C 30 20 CAPACITANCE (pF) 100°C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb

VCC = 30 V IC/IB = 10

QT QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10

100 70 50 30 20 VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Rise Time

200 IC/IB = 10 t s′, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 IC/IB = 20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–353

MMBT4403LT1
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ NF, NOISE FIGURE (dB) 8

6

6

4

4

IC = 50 µA 100 µA 500 µA 1.0 mA

2

RS = OPTIMUM SOURCE RESISTANCE

2

0 0.01 0.02 0.05 0.1 0.2

0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

Figure 9. Source Resistance Effects

h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from the MMBT4403LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly–numbered curves hfe and other “h” parameters for this series of transistors. To on each graph. obtain these curves, a high–gain and a low–gain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

100 70 50

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500

Figure 11. Input Impedance

100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio 2–354

Figure 13. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT4403LT1
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 14. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.8

0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA

0.2

0 0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region

1.0 0.8 VOLTAGE (VOLTS)

TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C)

0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE(sat) @ VCE = 10 V

0.4

0.2

qVS for VBE
0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

Figure 16. “On” Voltages

Figure 17. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–355

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low Noise Transistor
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER

MMBT5087LT1
Motorola Preferred Device

3 1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –50 –50 –3.0 –50 Unit Vdc Vdc Vdc mAdc

DEVICE MARKING
MMBT5087LT1 = 2Q

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) (VCB = –35 Vdc, IE = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO ICBO — — –10 –50 –50 –50 — — Vdc Vdc nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

2–356

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5087LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –1.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE 250 250 250 VCE(sat) VBE(sat) — — 800 — — –0.3 0.85 Vdc Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) (IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) fT Cobo hfe NF — — 2.0 2.0 40 — 250 — 4.0 900 MHz pF — dB

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–357

MMBT5087LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband 2–358 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5087LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 100 IC, COLLECTOR CURRENT (mA)

TA = 25°C

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 6. Collector Saturation Region

Figure 7. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 8. “On” Voltages

Figure 9. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–359

MMBT5087LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 10. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 11. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current–Gain — Bandwidth Product

Figure 13. Capacitance

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02

D = 0.5

0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 14. Thermal Response

2–360

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5087LT1
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 14 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–361

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low Noise Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT5088LT1 MMBT5089LT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50

2 EMITTER
1

3

5089LT1 25 30

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 — — 50 100 — — 50 50 nAdc 35 30 — — nAdc 30 25 — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–362

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCE(sat) — VBE(sat) — 0.8 0.5 Vdc 300 400 350 450 300 400 900 1200 — — — — Vdc —

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) MMBT5088 MMBT5089 NF MMBT5088 MMBT5089 — — 3.0 2.0 fT 50 Ccb — Ceb — hfe 350 450 1400 1800 dB 10 — 4.0 pF — pF MHz

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–363

MMBT5088LT1 MMBT5089LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz

10 7.0 5.0

300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

100 kHz 5.0 10

Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB)

Figure 3. Effects of Collector Current

BANDWIDTH = 1.0 Hz IC = 10 mA

BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA

8.0

500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB)

Figure 5. Wideband Noise Figure

IC = 10 mA

3.0 mA 1.0 mA 300 µA

12

8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

2–364

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5088LT1 MMBT5089LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C

0.02

0.03

0.05

0.1

0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA)

1.0

2.0

3.0

5.0

10

Figure 8. DC Current Gain

1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C

– 0.4 – 0.8

0.6

VBE @ VCE = 5.0 V

– 1.2 TJ = 25°C to 125°C

0.4

– 1.6

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

– 2.0

– 55°C to 25°C

– 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50 100

Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 10. Temperature Coefficients

8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C

500

300 200

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C

1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

Figure 11. Capacitance

Figure 12. Current–Gain — Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–365

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBT5401LT1
Motorola Preferred Device

2 EMITTER
1 2

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –150 –160 –5.0 –500 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT5401LT1 = 2L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO –150 V(BR)CBO –160 V(BR)EBO –5.0 ICES — — –50 –50 nAdc µAdc — — Vdc — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–366

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –1.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –50 mAdc, VCE = –5.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE 50 60 50 VCE(sat) — — VBE(sat) — — –1.0 –1.0 –0.2 –0.5 Vdc — 240 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz) fT 100 Cobo — hfe 40 NF — 8.0 200 dB 6.0 — 300 pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–367

MMBT5401LT1
200 150 TJ = 125°C h FE, CURRENT GAIN 100 70 50 – 55°C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = – 1.0 V VCE = – 5.0 V 25°C

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA

Figure 2. Collector Saturation Region

103 IC, COLLECTOR CURRENT ( µA) 102 101 TJ = 125°C 100 10–1 10–2 10–3 0.3 75°C REVERSE 25°C FORWARD VCE = 30 V IC = ICES

0.2

0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.6

0.7

Figure 3. Collector Cut–Off Region

2–368

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5401LT1
0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 θV, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 θVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 θVC for VCE(sat) TJ = – 55°C to 135°C

Figure 4. “On” Voltages

Figure 5. Temperature Coefficients

10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout

C, CAPACITANCE (pF)

VBB + 8.8 V

VCC –30 V

100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo

TJ = 25°C

Cobo

Values Shown are for IC @ 10 mA

0.3

2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)

10

20

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20

2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V

td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50

10 0.2 0.3 0.5

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–On Time

Figure 9. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–369

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600

2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2

3

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO MMBT5550 MMBT5551 V(BR)CBO MMBT5550 MMBT5551 V(BR)EBO 6.0 ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 IEBO — 50 — — — — 100 50 100 50 — 160 180 — — 140 160 — —

Vdc

Vdc

Vdc

nAdc µAdc nAdc  

 

2–370

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VCE(sat) Both Types MMBT5550 MMBT5551 VBE(sat) Both Types MMBT5550 MMBT5551 — — — 1.0 1.2 1.0 — — — 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 — — 250 250 — — Vdc —

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–371

MMBT5550LT1 MMBT5551LT1
500 300 200 h FE, DC CURRENT GAIN 100 – 55°C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V

0.2

0.3

0.5

0.7

1.0

3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)

10

20

30

50

70

100

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA

Figure 2. Collector Saturation Region

101 VCE = 30 V IC, COLLECTOR CURRENT ( µA) 100 10–1 10–2 10–3 10–4 10–5 0.4 TJ = 125°C 75°C REVERSE 25°C FORWARD V, VOLTAGE (VOLTS)

1.0

TJ = 25°C

0.8 IC = ICES VBE(sat) @ IC/IB = 10 0.6

0.4

0.2 VCE(sat) @ IC/IB = 10 0

0.3

0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.5

0.6

0.1

0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

100

Figure 3. Collector Cut–Off Region

Figure 4. “On” Voltages

2–372

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT5550LT1 MMBT5551LT1
2.5 θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.0 1.5 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF VBB – 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout TJ = – 55°C to +135°C

qVC for VCE(sat)

qVB for VBE(sat)

Values Shown are for IC @ 10 mA

Figure 5. Temperature Coefficients

Figure 6. Switching Time Test Circuit

100 70 50 30 C, CAPACITANCE (pF)

1000 TJ = 25°C 500 300 t, TIME (ns) 200 100 50 Cobo 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25°C tr @ VCC = 120 V

20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

1.0

VR, REVERSE VOLTAGE (VOLTS)

20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

50

100

200

Figure 7. Capacitances

Figure 8. Turn–On Time

5000 3000 2000 tf @ VCC = 30 V 1000 t, TIME (ns) 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25°C

20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)

100

200

Figure 9. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–373

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 1

MMBT6427LT1
Motorola Preferred Device

EMITTER 2

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT6427LT1 = 1V

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 12 ICES — ICBO — IEBO — 50 50 nAdc 1.0 nAdc — µAdc — Vdc — Vdc Vdc 

Preferred devices are Motorola recommended choices for future use and best overall value. 

0.062 in.   0.024 in. 99.5% alumina.

2–374

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base – Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 14,000 VCE(sat)(3) — — VBE(sat) — VBE(on) — 1.75 2.0 Vdc 1.2 1.5 Vdc 100,000 200,000 140,000 Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Current Gain — High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Cobo — Cibo — |hfe| 1.3 NF — 10 — dB 15 Vdc 7.0 pF pF

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–375

MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA

IC = 1.0 mA

Figure 2. Noise Voltage

Figure 3. Noise Current

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

200

14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)

100 70 50 30 20

BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA

100 µA

1.0 mA 10

1.0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

2–376

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6427LT1
SMALL–SIGNAL CHARACTERISTICS
20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4

3.0

2.0 0.04

0.1

0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

0.2 0.5

1.0

2.0

0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ = 125°C

3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA

hFE, DC CURRENT GAIN

25°C

1.5

– 55°C VCE = 5.0 V

1.0

2.0 k 5.0 7.0

10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

0.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA)

500 1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0

– 1.0

*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)

25°C TO 125°C

– 2.0

– 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0

qVB FOR VBE
– 5.0 – 55°C TO 25°C

0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

– 6.0 5.0 7.0 10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–377

MMBT6427LT1
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 12. Thermal Response

FIGURE A tP PP PP

t1 1/f DUTY CYCLE 1 + t1 f + ttP

PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

2–378

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT6428LT1 MMBT6429LT1

2 EMITTER
1 2

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES — ICBO — IEBO — 0.01 0.01 µAdc 0.1 µAdc 60 55 — — µAdc 50 45 — — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–379

MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) — — VBE(on) 0.56 0.66 0.2 0.6 Vdc 250 500 250 500 250 500 250 500 — — 650 1250 — — — — Vdc —

(IC = 0.1 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Cobo — Cibo — 8.0 3.0 pF 700 pF MHz

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–380

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6428LT1 MMBT6429LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz

10 7.0 5.0

300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

100 kHz 5.0 10

Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB)

Figure 3. Effects of Collector Current

BANDWIDTH = 1.0 Hz IC = 10 mA

BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA

8.0

500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB)

Figure 5. Wideband Noise Figure

IC = 10 mA

3.0 mA 1.0 mA 300 µA

12

8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–381

MMBT6428LT1 MMBT6429LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C

0.02

0.03

0.05

0.1

0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA)

1.0

2.0

3.0

5.0

10

Figure 8. DC Current Gain

1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C

– 0.4 – 0.8

0.6

VBE @ VCE = 5.0 V

– 1.2 TJ = 25°C to 125°C

0.4

– 1.6

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

– 2.0

– 55°C to 25°C

– 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)

20

50 100

Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 10. Temperature Coefficients

8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C

500

300 200

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C

1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100

Figure 11. Capacitance

Figure 12. Current–Gain — Bandwidth Product

2–382

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
NPN Silicon
COLLECTOR 3 1 BASE

MMBT6517LT1
Motorola Preferred Device

3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collector Current — Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500

2 EMITTER Unit Vdc Vdc Vdc mAdc mAdc

1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT6517LT1 = 1Z

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector – Base Breakdown Voltage (IC = 100 mAdc) Emitter – Base Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 250 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 350 V(BR)CBO 350 V(BR)EBO 6.0 ICBO — IEBO — 50 50 nAdc — nAdc — Vdc — Vdc Vdc  

0.062 in.   0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–383

MMBT6517LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base – Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 30 30 20 15 VCE(sat) — — — — VBE(sat) — — — VBE(on) — 2.0 0.75 0.85 0.90 Vdc 0.30 0.35 0.50 1.0 Vdc — — 200 200 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT 40 Ccb — Ceb — 80 6.0 pF 200 pF MHz

2–384

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6517LT1
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 30 20 – 55°C f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TJ = 125°C 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

25°C

30 20

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50 70 100

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 1. DC Current Gain

Figure 2. Current–Gain — Bandwidth Product

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0

TJ = 25°C

2.5 2.0 1.5 1.0 0.5 0 RθVC for VCE(sat) IC IB

+ 10
25°C to 125°C

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

– 0.5 – 1.0 – 1.5 – 2.0 – 2.5 1.0 RθVB for VBE

– 55°C to 25°C – 55°C to 125°C

VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70

100

Figure 3. “On” Voltages

Figure 4. Temperature Coefficients

100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb

TJ = 25°C

Ccb

0.5

1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50 100 200

Figure 5. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–385

MMBT6517LT1
1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C t, TIME (ns) 10 k 7.0 k 5.0 k 3.0 k 2.0 k 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C ts

td @ VBE(off) = 2.0 V

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

2.0 3.0

5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 6. Turn–On Time

Figure 7. Turn–Off Time

+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 –9.2 V PULSE WIDTH ≈ 100 µs tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k

+10.8 V

20 k

50 Ω SAMPLING SCOPE

APPROXIMATELY –1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

Figure 8. Switching Time Test Circuit

RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 SINGLE PULSE

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

0.05

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 9. Thermal Response

2–386

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6517LT1
FIGURE A tP PP PP

t1 1/f DUTY CYCLE 1 + t1 f + ttP

PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–387

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistor
PNP Silicon
COLLECTOR 3 1 BASE

MMBT6520LT1
Motorola Preferred Device

3

2 EMITTER

1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol VCEO VCBO VEBO IB IC Value –350 –350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc

DEVICE MARKING
MMBT6520LT1 = 2Z

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mA) Collector–Base Breakdown Voltage (IC = –100 µA) Emitter–Base Breakdown Voltage (IE = –10 µA) Collector Cutoff Current (VCB = –250 V) Emitter Cutoff Current (VEB = –4.0 V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –350 –350 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nA nA

Preferred devices are Motorola recommended choices for future use and best overall value.

2–388

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6520LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –1.0 mA, VCE = –10 V) (IC = –10 mA, VCE = –10 V) (IC = –30 mA, VCE = –10 V) (IC = –50 mA, VCE = –10 V) (IC = –100 mA, VCE = –10 V) Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –1.0 mA) (IC = –20 mA, IB = –2.0 mA) (IC = –30 mA, IB = –3.0 mA) (IC = –50 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –1.0 mA) (IC = –20 mA, IB = –2.0 mA) (IC = –30 mA, IB = –3.0 mA) Base–Emitter On Voltage (IC = –100 mA, VCE = –10 V) hFE 20 30 30 20 15 VCE(sat) — — — — VBE(sat) — — — VBE(on) — –0.75 –0.85 –0.90 –2.0 Vdc –0.30 –0.35 –0.50 –1.0 Vdc — — 200 200 — Vdc —

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –20 V, f = 20 MHz) Collector–Base Capacitance (VCB= –20 V, f = 1.0 MHz) Emitter–Base Capacitance (VEB= –0.5 V, f = 1.0 MHz) fT Ccb Ceb 40 — — 200 6.0 100 MHz pF pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–389

MMBT6520LT1
200 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) VCE = 10 V TJ = 125°C 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

hFE, DC CURRENT GAIN

100 70

25°C

– 55°C 50

30 20

30 20 1.0

2.0

3.0

5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 1. DC Current Gain

Figure 2. Current–Gain — Bandwidth Product

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0

TJ = 25°C

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

2.5 2.0 1.5 1.0 0.5 0 RθVC for VCE(sat) IC IB

+ 10
25°C to 125°C

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

– 0.5 – 1.0 – 1.5 – 2.0 – 2.5 1.0 RθVB for VBE

– 55°C to 25°C – 55°C to 125°C

VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70

100

Figure 3. “On” Voltages

Figure 4. Temperature Coefficients

100 70 50 C, CAPACITANCE (pF) 30 20 Ceb

TJ = 25°C

1.0 k 700 500 300 200 t, TIME (ns)

td @ VBE(off) = 2.0 V

VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C

tr 100 70 50 30 20 10 1.0

10 7.0 5.0 3.0 2.0 1.0 0.2

Ccb

0.5

1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50 100 200

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 5. Capacitance

Figure 6. Turn–On Time

2–390

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT6520LT1
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C ts

2.0 3.0

5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 7. Turn–Off Time

+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 –9.2 V PULSE WIDTH ≈ 100 µs tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k

+10.8 V

20 k

50 Ω SAMPLING SCOPE

APPROXIMATELY –1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

Figure 8. Switching Time Test Circuit

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 SINGLE PULSE

0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1

0.05

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 9. Thermal Response

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–391

MMBT6520LT1
FIGURE A tP PP PP

t1 1/f DUTY CYCLE 1 + t1 f + ttP

PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

2–392

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Driver Transistors
NPN Silicon
COLLECTOR 3 1 BASE

MMBTA05LT1 MMBTA06LT1*
*Motorola Preferred Device

3

2 EMITTER

1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA05 60 60 4.0 500 MMBTA06 80 80 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MMBTA05 MMBTA06 V(BR)CEO MMBTA05 MMBTA06 V(BR)EBO ICES ICBO — — 0.1 0.1 60 80 4.0 — — — — 0.1 Vdc Vdc

mAdc mAdc  

 

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–393

MMBTA05LT1 MMBTA06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) — — — — 0.25 1.2 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 4. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 100 — MHz

2–394

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3 BASE 1

MMBTA13LT1 MMBTA14LT1*
*Motorola Preferred Device

3 1 2

EMITTER 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES ICBO IEBO 30 — — — 100 100 Vdc nAdc nAdc  

0.062 in.   0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–395

MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) VBE 5000 10,000 10,000 20,000 — — — — — — 1.5 2.0 Vdc Vdc —

(IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 4. fT = |hfe| • ftest. fT 125 — MHz

v 300 ms, Duty Cycle v 2.0%.

RS

in en

IDEAL TRANSISTOR

Figure 1. Transistor Noise Model

2–396

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA13LT1 MMBTA14LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA)

2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA

IC = 1.0 mA

Figure 2. Noise Voltage

Figure 3. Noise Current

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

200

14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)

100 70 50 30 20

BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA

100 µA

1.0 mA 10

1.0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

2.0

5.0

10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)

500

100 0

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–397

MMBTA13LT1 MMBTA14LT1
SMALL–SIGNAL CHARACTERISTICS

20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL–SIGNAL CURRENT GAIN

4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4

3.0

2.0 0.04

0.1

0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

0.2 0.5

1.0

2.0

0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k

TJ = 125°C

3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA

hFE, DC CURRENT GAIN

25°C

1.5

– 55°C VCE = 5.0 V

1.0

2.0 k 5.0 7.0

10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

0.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA)

500 1000

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

RθV, TEMPERATURE COEFFICIENTS (mV/°C)

1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0

– 1.0

*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)

25°C TO 125°C

– 2.0

– 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0

qVB FOR VBE
– 5.0 – 55°C TO 25°C

0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500

– 6.0 5.0 7.0 10

20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

500

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

2–398

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA13LT1 MMBTA14LT1
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.2

0.5

1.0

2.0

5.0

10

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 12. Thermal Response

IC, COLLECTOR CURRENT (mA)

1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C

1.0 ms 100 µs

FIGURE A tP PP PP

1.0 s

t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP

PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–399

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Amplifier
NPN Silicon
COLLECTOR 3 1 BASE

MMBTA20LT1
3 1

2 EMITTER

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBTA20LT1 = 1C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICBO 40 4.0 — — — 100 Vdc Vdc nAdc  

0.062 in.   0.024 in. 99.5% alumina.

2–400

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 — 400 0.25 — Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 125 — — 4.0 MHz pF

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–401

MMBTA20LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

Ǔ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband 2–402 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA20LT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C

h FE, DC CURRENT GAIN

200

25°C

– 55°C 100 80 60 40 0.004 0.006 0.01 MPS390 VCE 4 = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 IC, COLLECTOR CURRENT (mA) MPS3904 TJ = 25°C

100

0.8 IC = 1.0 mA 10 mA 50 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

100 mA

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 9. Collector Saturation Region

Figure 10. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–403

MMBTA20LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 14. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product

Figure 16. Capacitance

20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe ≈ 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS3904 hfe ≈ 200 @ IC = 1.0 mA

Figure 17. Input Impedance

Figure 18. Output Admittance

2–404

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA20LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 19. Thermal Response

104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19A.

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C dc TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

100 µs 10 µs 1.0 s

dc

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

Figure 20.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–405

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc

* MMBTA42LT1 MMBTA43LT1
*Motorola Preferred Device

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO MMBTA42 MMBTA43 V(BR)CBO MMBTA42 MMBTA43 V(BR)EBO ICBO MMBTA42 MMBTA43 IEBO MMBTA42 MMBTA43 — — 0.1 0.1 — — 0.1 0.1 300 200 6.0 — — — 300 200 — —

Vdc

Vdc

Vdc µAdc

µAdc

2–406

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA42LT1 MMBTA43LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MMBTA42 MMBTA43 VCE(sat) MMBTA42 MMBTA43 VBE(sat) — — — 0.5 0.5 0.9 Vdc 25 40 40 40 — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA42 MMBTA43 fT Ccb — — 3.0 4.0 50 — MHz pF

v 300 ms, Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–407

MMBTA42LT1 MMBTA43LT1
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125°C

100

25°C 50 –55°C

30 20 1.0

2.0

3.0

5.0

7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

Figure 1. DC Current Gain

100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz

30 20

2.0 1.0 0.2

100

200

10 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25°C

Figure 4. “On” Voltages

2–408

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Driver Transistors
PNP Silicon
1 BASE

COLLECTOR 3

MMBTA55LT1 * MMBTA56LT1
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA55 –60 –60 –4.0 –500 –80 –80

2 EMITTER MMBTA56 Unit Vdc Vdc Vdc mAdc
1 2

3

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Symbol 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) Collector Cutoff Current (VCB = –80 Vdc, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES ICBO –60 –80 –4.0 — — — — — — –0.1 –0.1 –0.1 Vdc Vdc µAdc µAdc

ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) DC Current Gain (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc) hFE VCE(sat) VBE(on) fT 100 100 — — — — –0.25 –1.2 — Vdc Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4) (IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz) 1. 2. 3. 4. FR–5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity. 50 — MHz

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–409

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 1

MMBTA63LT1 MMBTA64LT1 *
*Motorola Preferred Device

EMITTER 2
3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc
1 2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Characteristic Symbol 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc) Collector Cutoff Current (VCB = –30 Vdc) Emitter Cutoff Current (VEB = –10 Vdc) V(BR)CEO ICBO IEBO hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) VBE(on) fT 5,000 10,000 10,000 20,000 — — — — — — –1.5 –2.0 Vdc Vdc –30 — — — –100 –100 Vdc nAdc nAdc

ON CHARACTERISTICS
DC Current Gain(3) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) —

Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc) Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

125

MHz

2–410

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA63LT1 MMBTA64LT1
200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 –0.3 25°C VCE = –2.0 V –5.0 V –10 V TA = 125°C

–55°C

–0.5

–0.7

–1.0

–2.0

–3.0

–5.0

–7.0

–10

–20

–30

–50

–70

–100

–200

–300

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

–2.0 TA = 25°C –1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 100

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2.0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.1–0.2 –0.5 –1 –2 IC = –10 mA –50 mA –100 mA –175 mA

TA = 25°C

–1.2 VBE(on) @ VCE = –5.0 V –0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 –0.4

–300 mA

0 –0.3 –0.5

–1.0

–2 –3 –5 –10 –20 –30 –50 IC, COLLECTOR CURRENT (mA)

–100 –200 –300

–5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K IB, BASE CURRENT (µA)

Figure 2. “On” Voltage

Figure 3. Collector Saturation Region

10 |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = –5.0 V f = 100 MHz TA = 25°C

4.0 3.0 2.0 1.0 0.4 0.2

0.1 –1.0 –2.0

–5.0

–10

–20

–50

–100 –200

–500

–1K

IC, COLLECTOR CURRENT (mA)

Figure 4. High Frequency Current Gain

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–411

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBTA70LT1

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –40 –4.0 –100

2 EMITTER
1

3

Unit Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA70LT1 = M2C

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg Symbol 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO –40 –4.0 — — — –100 Vdc Vdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE VCE(sat) 40 — 400 –0.25 — Vdc

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. fT Cobo 125 — — 4.0 MHz pF

2–412

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA70LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–413

MMBTA70LT1
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C 25°C

h FE, DC CURRENT GAIN

200

– 55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 6. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TA = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

2–414

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA70LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 11. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 12. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Current–Gain — Bandwidth Product

Figure 14. Capacitance

20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe ≈ 200 @ IC = –1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = –10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA

Figure 15. Input Impedance

Figure 16. Output Admittance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–415

MMBTA70LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 17. Thermal Response

104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 18. Typical Collector Leakage Current

2–416

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Transistors
PNP Silicon
1 BASE

COLLECTOR 3

* MMBTA92LT1 MMBTA93LT1
*Motorola Preferred Device

2 EMITTER

3 1 2

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA92 –300 –300 –5.0 –500 MMBTA93 –200 –200 –5.0 Unit Vdc Vdc Vdc mAdc

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.

V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO — — — –0.25 –0.25 –0.1 –300 –200 –5.0 — — — –300 –200 — —

Vdc

Vdc

Vdc µAdc

µAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–417

MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(3)
DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 VBE(sat) — — — –0.5 –0.5 –0.9 Vdc 25 40 25 25 — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA92 MMBTA93 fT Ccb — — 6.0 8.0 50 — MHz pF

v 300 ms, Duty Cycle v 2.0%.

2–418

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTA92LT1 MMBTA93LT1
150 100 hFE, DC CURRENT GAIN +25°C 70 50 –55°C TJ = +125°C VCE = –10 Vdc

30 20 15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100 50 Cib C, CAPACITANCE (pF) 20 10 5.0

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 80 60 40 30 20

TJ = 25°C VCE = –20 Vdc

2.0 Ccb 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 VR, REVERSE VOLTAGE (VOLTS)

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

–1.0

–0.8 V, VOLTAGE (VOLTS) VBE @ VCE = –10 V –0.6

–0.4

–0.2

VCE(sat) @ IC/IB = 10 mA

0 –1.0

–2.0

–5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–50

–100

Figure 4. “On” Voltages

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–419

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

VHF/UHF Transistor

MMBTH10LT1
COLLECTOR 3 1 BASE
3
Motorola Preferred Device

NPN Silicon

2 EMITTER

1 2

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc

DEVICE MARKING
MMBTH10LT1 = 3EM

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit

Preferred devices are Motorola recommended choices for future use and best overall value.

2–420

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTH10LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Common–Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT Ccb Crb rb′Cc 650 — — — — — — — — 0.7 0.65 9.0 MHz pF pF ps hFE VCE(sat) VBE 60 — — — — — — 0.5 0.95 — Vdc Vdc Symbol Min Typ Max Unit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–421

MMBTH10LT1
TYPICAL CHARACTERISTICS

COMMON–BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE
80 y ib , INPUT ADMITTANCE (mmhos) 70 60 – bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 – 50 – 60 – 20 1000 MHz – 30 – 40 700 400 200 100 gib 0 – 10

0

10

20

30

40 50 gib (mmhos)

60

70

80

Figure 1. Rectangular Form

Figure 2. Polar Form

yfb, FORWARD TRANSFER ADMITTANCE
y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 – 10 – 20 – 30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 60 50 40 10 30 20 gfb (mmhos) 0 – 10 – 20 – 30 20 jb fb (mmhos) – gfb 40 bfb 50 100 60 200 400 600 700

30 1000 MHz

Figure 3. Rectangular Form

Figure 4. Polar Form

2–422

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTH10LT1
TYPICAL CHARACTERISTICS

COMMON–BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 0 100 4.0 MPS H11 3.0 –brb 2.0 MPS H10 – 4.0 –grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 – 5.0 –2.0 –1.8 –1.2 –0.8 1000 MHz –0.4 0 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 –brb – 1.0 jb rb (mmhos) 200

– 2.0

400

– 3.0 700

1.0

Figure 5. Rectangular Form yob, OUTPUT ADMITTANCE
10 yob, OUTPUT ADMITTANCE (mmhos) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 gob 0 0 2.0 2.0 100 bob jb ob(mmhos) 6.0 8.0 700 10

Figure 6. Polar Form

1000 MHz

4.0

400 200

4.0 6.0 gob (mmhos)

8.0

10

Figure 7. Rectangular Form

Figure 8. Polar Form

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–423

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

VHF Mixer Transistor
NPN Silicon
• Designed for • fT = 400 MHz Min @ 8 mA
1 BASE COLLECTOR 3

MMBTH24LT1
Motorola Preferred Device

3

2 EMITTER

1 2

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value 30 40 4.0 50 Unit Vdc Vdc Vdc mAdc

DEVICE MARKING
MMBTH24LT1 = M3A

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO 30 40 4.0 — — — — — — — — 50 Vdc Vdc Vdc nAdc Symbol Min Typ Max Unit

Preferred devices are Motorola recommended choices for future use and best overall value.

2–424

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBTH24LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product(3) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Conversion Gain (213 MHz to 45 MHz) (IC= 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) (60 MHz to 45 MHz) (IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. fT Ccb — 400 — — 19 CG 24 20 — 620 0.25 — 24 — 0.45 — — MHz pF dB hFE 30 — — — Symbol Min Typ Max Unit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–425

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

UHF/VHF Transistor

PNP Silicon
• Designed for UHF/VHF Amplifier Applications • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA
1 BASE

COLLECTOR 3

MMBTH69LT1
Motorola Preferred Device

2 EMITTER

3 1 2

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value –15 –15 –4.0 Unit Vdc Vdc Vdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTH69LT1 = M3J

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO –15 –15 –4.0 — — — — — — — — –100 Vdc Vdc Vdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc) hFE 30 — 300 —

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCE = –10 Vdc, IE = 0, f = 1.0 MHz) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.

fT Crb

2000 —

— —

— 0.35

MHz pF

2–426

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

UHF/VHF Transistor

PNP Silicon
1 BASE

COLLECTOR 3

MMBTH81LT1
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value –20 –20 –3.0

2 EMITTER
1

3

Unit Vdc Vdc Vdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTH81LT1 = 3D

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg Symbol Min 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –20 –20 –3.0 — — — — — — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc) Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc) hFE VCE(sat) VBE(on) 60 — — — — — — –0.5 –0.9 — Vdc Vdc

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.

fT Ccb Cce

600 — —

— — —

— 0.85 0.65

MHz pF pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–427

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad General Purpose Transistors
NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ2222 * MMPQ2222A
*Motorola Preferred Device

16

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.52 4.2 PD 0.8 6.4 TJ, Tstg 2.4 19.2 –55 to +150 1.0 8.0 MMPQ2222 30 60 5.0 500 Four Transistors Equal Power Watts mW/°C Watts mW/°C °C MMPQ2222A 40 75 Unit Vdc Vdc Vdc mAdc

1

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2222 MMPQ2222A IEBO MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — — — 50 10 100 nAdc 30 40 60 75 5.0 — — — — — — — — — — — — — Vdc Vdc Vdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–428

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ2222 MMPQ2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 300 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2222A MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222A VCE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A VBE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A — — — — — — — — 1.3 1.2 2.6 2.0 — — — — — — — — 0.4 0.3 1.6 1.0 Vdc 35 50 75 75 100 100 30 40 50 — — — — — — — — — — — — — — 300 — — — Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 — — 350 4.5 17 — — — MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) Turn–Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton — 25 — ns

toff

250

ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–429

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Switching Transistor
NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ2369
Motorola Preferred Device

16 1

CASE 751B–05, STYLE 4 SO–16

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 –55 to +150 0.72 6.4 Value 15 40 4.5 500 Four Transistors Equal Power Watts mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 — — — — — — — — 0.4 Vdc Vdc Vdc

mAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–430

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ2369
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) — — — — — — — — 0.25 0.9 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 450 — — 550 2.5 3.0 — 4.0 5.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton — 9.0 — ns

toff

15

ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–431

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad General Purpose Transistors
PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ2907 MMPQ2907A

16 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 0.8 6.4 MMPQ2907 –40 –60 –5.0 –600 Four Transistors Equal Power 1.0 8.0 2.4 19.2 –55 to +150 Watts mW/°C Watts mW/°C °C MMPQ2907A –60 Unit Vdc Vdc Vdc mAdc

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2907 MMPQ2907A IEBO MMPQ2907 MMPQ2907A V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — — — –50 –10 –50 nAdc –40 –60 –60 –5.0 — — — — — — — — Vdc Vdc Vdc nAdc

v 300 ms, Duty Cycle = 2.0%.

REV 1

2–432

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ2907 MMPQ2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = –100 µAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (IC = –300 mAdc, VCE = –10 Vdc) (IC = –500 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –300 mAdc, IB = –30 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –300 mAdc, IB = –30 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE MMPQ2907A MMPQ2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A VCE(sat) MMPQ2907 MMPQ2907 MMPQ2907 VBE(sat) MMPQ2907 MMPQ2907 MMPQ2907A — — — — — — –1.3 –2.6 –2.6 — — — — — — –0.4 –1.6 –1.6 Vdc 75 100 75/100 100 30/50 50 — — — — — — — — — 300 — — Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 — — 350 6.0 20 — — — MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) Turn–Off Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) 1. Pulse Test: Pulse Width ton toff — — 30 100 — — ns ns

v 300 ms, Duty Cycle = 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–433

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Memory Driver Transistor
PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ3467
Motorola Preferred Device

16 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25°C Derate above 25°C Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 1.0 8.0 Value –40 –40 –5.0 –1.0 Four Transistors Equal Power 1.2 9.6 2.5 20 –55 to +150 Watts mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc Adc

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –40 –40 –5.0 — — — — — — — — — — –200 –200 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

2–434

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ3467
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = –500 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(1) (IC = –500 mAdc, IB = –50 mAdc) hFE VCE(sat) VBE(sat) 20 — — — –0.23 –0.9 — –0.5 –1.2 — Vdc Vdc

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib — — — 190 10 55 — — — MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = –500 mAdc, IB1 = –50 mAdc) Turn–Off Time (IC = –500 mAdc, IB1 = IB2 = –50 mAdc) 1. Pulse Test: Pulse Width ton toff — — 20 60 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–435

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Core Driver Transistor
NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ3725
Motorola Preferred Device

16 1

CASE 751B–05, STYLE 4 SO–16

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Operating and Storage Junction Temperature Range Symbol VCEO VCES VEB IC TJ, Tstg Value 40 60 5.0 1.0 –55 to +150 Four Transistors Equal Power 1.4 11.2 2.5 2.0 –55 to +150 Watts mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc Adc °C

Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.6 4.8 1.0 8.0

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 — — — — — — — — 0.5 Vdc Vdc Vdc

mAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–436

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ3725
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) — 0.8 75 45 0.32 0.9 200 — 0.45 1.1 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib — — — 275 5.1 62 — — — MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = –3.8 Vdc) Turn–Off Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 1. Pulse Test: Pulse Width ton toff — — 20 50 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–437

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch Transistor

NPN Silicon

MMPQ3904
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

Motorola Preferred Device

16 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 –55 to +150 800 6.4 mW mW/°C Watts mW/°C °C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 — — — — — — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–438

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) — — 90 160 200 0.1 0.65 — — — 0.2 0.85 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 250 — — 300 2.0 4.0 — 4.0 8.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 10 Vdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc) Turn–Off Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff — — 37 136 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–439

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch Transistor MMPQ3906
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

PNP Silicon

Motorola Preferred Device

16 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25°C Derate above 25°C Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value –40 –40 –5.0 –200 Four Transistors Equal Power 800 6.4 1.92 15.4 –55 to +150 mW mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –40 –40 –5.0 — — — — — — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

2–440

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMPQ3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE 40 60 75 VCE(sat) VBE(sat) — — 160 180 200 –0.1 –0.65 — — — –0.25 –0.85 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 — — 250 3.3 4.8 — 4.5 10 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = –10 mAdc, VBE(off) = 0.5 Vdc, IB1 = –1.0 mAdc) Turn–Off Time (IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) 1. Pulse Test: Pulse Width ton toff — — 43 155 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–441

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistor
PNP/NPN Silicon

1 2 3 4 5 6 7 8

16 15 14 13 12 11 10 9

MMPQ6700
Voltage and current are negative for PNP transistors

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value 40 40 5.0 200 Four Transistors Equal Power 0.72 6.4 1.92 15.4 –55 to +150 Watts mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc
1 16

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 35 50 70 VCE(sat) VBE(sat) — — — — — 0.25 0.9 Vdc Vdc —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width PNP NPN fT Cob Cib — — 10 8.0 200 — — 4.5 MHz pF pF

v 300 ms, Duty Cycle v 2.0%.

2–442

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad MPU Clock Buffer Transistor
NPN/PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

MMPQ6842
Voltage and current are negative for PNP transistors

16 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 –55 to +150 0.72 6.4 Value 30 30 4.0 200 Four Transistors Equal Power Watts mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc

CASE 751B–05, STYLE 4 SO–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 — — — — — — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–443

MMPQ6842
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0°C Base – Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 — — — 0.05 0.65 — — — 0.15 0.9 Vdc Vdc —

v T v 70°C)

VCE(sat) VBE(sat)

— —

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP NPN fT Cob Cib — — 5.0 4.0 10 8.0 200 — 350 3.0 — 4.5 MHz pF pF

SWITCHING CHARACTERISTICS (TA = 25°C, VCC = 5.0 Vdc)
Propagation Delay Time (50% Points TP1 to TP3) (50% Points TP2 to TP4) Rise Time (0.3 V to 4.7 V, TP3 or TP4) Fall Time (4.7 V to 0.3 V, TP3 or TP4) 1. Pulse Test: Pulse Width ns tPLH tPHL tr tf — — 5.0 5.0 15 6.0 25 10 25 15 35 20 ns ns

v 300 ms; Duty Cycle v 2.0%.

2–444

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of PIN 1 damage to the die. BASE • Available in 8 mm embossed tape and reel. Use the (INPUT) Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD R1 R2 PIN 3 COLLECTOR (OUTPUT)

MMUN2111LT1 SERIES
Motorola Preferred Devices

PNP SILICON BIAS RESISTOR TRANSISTOR

3 1 2

PIN 2 EMITTER (GROUND)

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

Value 50 50 100 *200 1.6

Unit Vdc Vdc mAdc mW mW/°C

THERMAL CHARACTERISTICS
Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL Value 625 – 65 to +150 260 10 Unit °C/W °C °C Sec

DEVICE MARKING AND RESISTOR VALUES
Device MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1(2) Marking A6A A6B A6C A6D A6E R1 (K) 10 22 47 10 10 R2 (K) 10 22 47 47 ∞

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2111T1/D)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–445

MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device MMUN2116LT1(2) MMUN2130LT1(2) MMUN2131LT1(2) MMUN2132LT1(2) MMUN2133LT1(2) MMUN2134LT1(2) Marking A6F A6G A6H A6J A6K A6L R1 (K) 4.7 1.0 2.2 4.7 4.7 22 R2 (K) ∞ 1.0 2.2 4.7 47 47

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)

V(BR)CBO V(BR)CEO

Vdc Vdc

ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — 60 100 140 140 250 250 5.0 15 27 140 130 — — — — — — — — — — — — 0.25 Vdc

Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1

VCE(sat)

VOL — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

Vdc

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

2–446

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2111LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc

R1

7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055

10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1

13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185

kΩ

Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1

R1/R2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–447

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

1 IC/IB = 10 TA = –25°C 75°C 0.1 25°C

200

150

100 RθJA = 625°C/W

50

0 –50

0

50

100

150

0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA)

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

Figure 2. VCE(sat) versus IC
4 VCE = 10 V 3 f = 1 MHz lE = 0 V TA = 25°C

1000 h FE, DC CURRENT GAIN (NORMALIZED)

100

TA = 75°C 25°C –25°C

Cob , CAPACITANCE (pF) 100

2

1

10

1

10 IC, COLLECTOR CURRENT (mA)

0

0

10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)

50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

100

75°C

25°C TA = –25°C

100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)

IC , COLLECTOR CURRENT (mA)

10

1

10

TA = –25°C 25°C 75°C

0.1

1

0.01 0.001 0 1 2

VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50

Figure 5. Output Current versus Input Voltage

Figure 6. Input Voltage versus Output Current

2–448

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = –25°C 25°C 1 75°C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V

TA = 75°C 100

25°C

–25°C

0.1

0.01

10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100

Figure 7. VCE(sat) versus IC

Figure 8. DC Current Gain

4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C

100

75°C

25°C TA = –25°C

Cob , CAPACITANCE (pF)

3

10

1

2

0.1 VO = 5 V

1

0.01 0 1 2 3 4 5 6 7

0

0

10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)

50

0.001

8

9

10

Vin, INPUT VOLTAGE (VOLTS)

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C

1

0.1

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 11. Input Voltage versus Output Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–449

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 75°C 0.1 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75°C 25°C –25°C 100

25°C

0.01

0

10 20 30 IC, COLLECTOR CURRENT (mA)

40

10

1

10 IC, COLLECTOR CURRENT (mA)

100

Figure 12. VCE(sat) versus IC

Figure 13. DC Current Gain

1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C

100

TA = 75°C

25°C –25°C

0.8 Cob , CAPACITANCE (pF)

10 1

0.6

0.4

0.1

0.2

0.01 VO = 5 V

0

0

10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)

50

0.001

0

1

2

3

4

5

6

7

8

9

10

Vin, INPUT VOLTAGE (VOLTS)

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100 VO = 2 V Vin , INPUT VOLTAGE (VOLTS) TA = –25°C 10 25°C 75°C

1

0.1

0

10

20 30 IC, COLLECTOR CURRENT (mA)

40

50

Figure 16. Input Voltage versus Output Current

2–450

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = –25°C 25°C 0.1 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V TA = 75°C 25°C –25°C

0.01

0.001

0

20 40 60 IC, COLLECTOR CURRENT (mA)

80

Figure 17. VCE(sat) versus IC

Figure 18. DC Current Gain

4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C

100 TA = 75°C IC, COLLECTOR CURRENT (mA) –25°C 25°C

10

VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)

+12 V TA = –25°C 25°C 75°C

Typical Application for PNP BRTs

1

LOAD 0.1

0

10

20 30 IC, COLLECTOR CURRENT (mA)

40

50

Figure 21. Input Voltage versus Output Current

Figure 22. Inexpensive, Unregulated Current Source

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–451

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD R1 PIN 3 COLLECTOR (OUTPUT)

MMUN2211LT1 SERIES
Motorola Preferred Devices

NPN SILICON BIAS RESISTOR TRANSISTOR

3 1

PIN 1 R2 BASE (INPUT) PIN 2 EMITTER (GROUND)

2

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

Value 50 50 100 *200 1.6

Unit Vdc Vdc mAdc mW mW/°C

THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TJ, Tstg TL 625 – 65 to +150 260 10 °C/W °C °C Sec

DEVICE MARKING AND RESISTOR VALUES
Device MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1(2) MMUN2216LT1(2) MMUN2230LT1(2) MMUN2231LT1(2) MMUN2232LT1(2) MMUN2233LT1(2) MMUN2234LT1(2) Marking A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L R1 (K) 10 22 47 10 10 4.7 1 22 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1 22 2.2 4.7 47 47

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

2–452

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)

V(BR)CBO V(BR)CEO

Vdc Vdc

ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — 60 100 140 140 350 350 5.0 15 30 200 150 — — — — — — — — — — — — 0.25 Vdc

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2213LT1

VCE(sat)

VOL — — — — — — — — — — — VOH 4.9 — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 —

Vdc

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω)

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Vdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–453

MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(3)
Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 0.56 kΩ

Resistor Ratio

R1/R2

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

2–454

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C 75°C

200

0.1

150

100 RθJA = 625°C/W

0.01

50

0

–50

0 50 100 TA, AMBIENT TEMPERATURE (°C)

150

0.001

0

20 40 60 IC, COLLECTOR CURRENT (mA)

80

Figure 1. Derating Curve

Figure 2. VCE(sat) versus IC

1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V Cob , CAPACITANCE (pF) TA = 75°C 25°C –25°C 100

4 f = 1 MHz lE = 0 V TA = 25°C

3

2

1

10

1

10 IC, COLLECTOR CURRENT (mA)

100

0

0

10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)

50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

100 75°C IC , COLLECTOR CURRENT (mA) 10

25°C TA = –25°C

10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = –25°C 25°C 75°C 1

1

0.1

0.01 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10

0.001

0.1

0

10

20 30 40 IC, COLLECTOR CURRENT (mA)

50

Figure 5. VCE(sat) versus IC

Figure 6. VCE(sat) versus IC

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–455

MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C 75°C h FE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C –25°C 100

0.1

0.01

0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80

10 1 10 IC, COLLECTOR CURRENT (mA) 100

Figure 7. VCE(sat) versus IC

Figure 8. DC Current Gain

4 f = 1 MHz lE = 0 V TA = 25°C

100

75°C

25°C TA = –25°C

Cob , CAPACITANCE (pF)

3

IC , COLLECTOR CURRENT (mA)

10

1

2

0.1

1

0.01 VO = 5 V 0 2 4 6 8 10

0

0

10

20

30

40

50

0.001

VR, REVERSE BIAS VOLTAGE (VOLTS)

Vin, INPUT VOLTAGE (VOLTS)

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100 VO = 0.2 V Vin , INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C

1

0.1

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 11. Input Voltage versus Output Current

2–456

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C –25°C 100

TA = –25°C 25°C 75°C

1

0.1

0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80

10

1

10 IC, COLLECTOR CURRENT (mA)

100

Figure 12. VCE(sat) versus IC

Figure 13. DC Current Gain

1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C

100 75°C 10

25°C TA = –25°C

0.8 Cob , CAPACITANCE (pF)

0.6

1

0.4

0.1

0.2

0.01 VO = 5 V

0

0

10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)

50

0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100 VO = 0.2 V TA = –25°C V in , INPUT VOLTAGE (VOLTS) 10 25°C 75°C

1

0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50

Figure 16. Input Voltage versus Output Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–457

MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = –25°C 25°C 0.1 75°C 300 250 200 150 100 50 0 VCE = 10 TA = 75°C 25°C –25°C

0.01

0.001

0

20 40 60 IC, COLLECTOR CURRENT (mA)

80

1

2

4

6

8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA)

80 90 100

Figure 17. VCE(sat) versus IC

Figure 18. DC Current Gain

4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C

100 75°C IC, COLLECTOR CURRENT (mA) 25°C

TA = –25°C 10

VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)

TA = –25°C

25°C 75°C 1

0.1

0

10

20 30 IC, COLLECTOR CURRENT (mA)

40

50

Figure 21. Input Voltage versus Output Current

2–458

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs

+12 V

ISOLATED LOAD

FROM µP OR OTHER LOGIC

Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

+12 V

VCC

OUT IN LOAD

Figure 23. Open Collector Inverter: Inverts the Input Signal

Figure 24. Inexpensive, Unregulated Current Source

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–459

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad General Purpose Transistors
NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7

MPQ2222 MPQ2222A*
*Motorola Preferred Device

14 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 5.2 MPQ2222 30 60 5.0 500 Total Device 1.9 15.2 Watts mW/°C °C MPQ2222A 40 Unit Vdc Vdc Vdc mAdc

CASE 646–06, STYLE 1 TO–116

–55 to +150

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 66 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPQ2222 MPQ2222A V(BR)CBO MPQ2222 MPQ2222A V(BR)EBO MPQ2222 MPQ2222A ICBO MPQ2222 MPQ2222A IEBO — — — 50 10 100 nAdc 5.0 6.0 — — nAdc 60 75 — — Vdc 40 40 — — Vdc Vdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MPQ2221/D)

2–460

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ2222 MPQ2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) hFE MPQ2222A MPQ2222A MPQ2222,A MPQ2222,A MPQ2222 MPQ2222A VCE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A VBE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A — 0.6 — — 1.3 1.2 2.6 2.0 — — — — 0.4 0.3 1.6 1.0 Vdc 35 50 75 100 30 40 — — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — — 8.0 30 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) Turn–Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2222A toff MPQ2222A — 285 ns — 35 ns

v 300 ms, Duty Cycle v 2.0%.

GENERATOR RISE TIME ≤ 2.0 ns PW ≤ 200 ns DUTY CYCLE = 2.0%

DUTY CYCLE = 2.0% +30 V ≈ 100 ms < 5.0 ns +16.2 V +30 V

200

200

9.9 V

619 0

1.0 k

0

1N916 0.5 V SCOPE Rin > 100 k ohms Cin ≤ 12 pF RISE TIME ≤ 5.0 ns ≈ 500 ms –13.8 V –3.0 V SCOPE Rin > 100 k ohms Cin ≤ 12 pF RISE TIME ≤ 5.0 ns

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage Time and Fall Time Equivalent Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–461

MPQ2222 MPQ2222A
4.0 h FE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 25°C 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) –55°C TJ = 175°C VCE = 1.0 V VCE = 10 V

Figure 3. Normalized DC Current Gain
1.4 TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V +1.6

qV , TEMPERATURE COEFFICIENT (mV/° C)

+0.8

25°C TO 175°C

qVC FOR VCE(sat)
0 –55°C TO 25°C

–0.8

–1.6

qVB FOR VBE
0.5 1.0 2.0 5.0 10 20 50 100 200 500

–2.4 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. “ON” Voltages

Figure 5. Temperature Coefficients

(VCE = 10 Vdc, TA = 25°C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 NF, NOISE FIGURE (dB) 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA 6.0

NOISE FIGURE

4.0

2.0

0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 6. Frequency Effects

Figure 7. Source Resistance Effects

2–462

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ2222 MPQ2222A
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 500 300 200 100 70 50 30 20 10 VCE = 20 V TJ = 25°C f = 100 MHz 30 TJ = 25°C 20 C, CAPACITANCE (pF)

Cib 10 7.0 5.0 Cob

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20 30

3.0 0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

IC, COLLECTOR CURRENT (mAdc)

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Current–Gain — Bandwidth Product

Figure 9. Capacitances

SWITCHING TIME CHARACTERISTICS
200 tr 100 CHARGE (pC) t, TIME (ns) VCC = 30 V UNLESS NOTED 50 30 td @ VEB(off) = 0 20 tr @ 5 V td @ VEB(off) = 2 V 5.0 10 20 30 50 100 200 300 TJ = 25°C IC/IB = 10 10 k 5k 2k 1k 500 200 100 50 20 3.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) VCC = 30 V QA, ACTIVE REGION CHARGE TJ = 25°C IC/IB = 10 VCC = 5 V UNLESS NOTED

QT, TOTAL CONTROL CHARGE HIGH GAIN TYPES LOW GAIN TYPES ALL TYPES

10 3.0

IC, COLLECTOR CURRENT (mA)

Figure 10. Turn–On Time

Figure 11. Charge Data

300 t s ,t f , STORAGE AND FALL TIME (ns) ts IC/IB = 10 100 70 50 IC/IB = 10 30 20 LOW GAIN TYPES TJ = 25°C 10 20 30 50 70 100 200 300 tf IC/IB = 20 t s ,t f , STORAGE AND FALL TIME (ns) 200

300 200 ts IC/IB = 10 100 70 50 30 20 HIGH GAIN TYPES TJ = 25°C IC/IB = 10 tf IC/IB = 20

10 IC, COLLECTOR CURRENT (mA)

10 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)

Figure 12. Turn–Off Behavior

Figure 13. Turn–Off Behavior

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–463

MPQ2222 MPQ2222A
GENERATOR RISE TIME ≤ 2.0 ns PW ≤ 200 ns +30 V DUTY CYCLE = 2.0% 200 SCOPE Rin > 100 k ohms Cin ≤ 12 pF RISE TIME ≤ 5.0 ns +16.2 V 1.0 k 0 > 200 ns 0 1N916 RISE TIME ≤ 3.0% DUTY CYCLE = 2.0% +30 V

200 SCOPE Rin > 100 k ohms Cin ≤ 12 pF RISE TIME ≤ 5.0 ns

9.9 V

619

–13.8 V

–3.0 V

Figure 14. Delay and Rise Time Equivalent Test Circuit

Figure 15. Storage Time and Fall Time Equivalent Test Circuit

2–464

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Switching Transistor
NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7

MPQ2369
Motorola Preferred Device

14 1

CASE 646–06, STYLE 1 TO–116

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.5 5.0 Value 15 40 4.5 500 Total Device 1.5 15 Watts mW/°C °C Unit Vdc Vdc Vdc mAdc

–55 to +125

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 — — — — — — — — 0.4 Vdc Vdc Vdc

mAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–465

MPQ2369
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) — — — — — — — — 0.25 0.9 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 450 — — 550 2.5 3.0 — 4.0 5.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 3.0 Vdc, VBE = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton toff — — 9.0 15 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

2–466

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ2369
+10 V 980 SCOPE +6.0 V 0 –4.0 V PULSE WIDTH = 300 ns tf ≤ 1.0 ns DUTY CYCLE ≤ 2.0% 500 CS ≤ 3.0 pF

Figure 1. Storage Time Test Circuit

200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 td @ VBE(off) = 1.5 V 20 30 50 70 100 tr @ VCC = 3.0 V tr @ VCC = 10 V t, TIME (ns) IC/IB = 10 TJ = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) tf VCC = 10 V IC/IB = 10 TJ = 25°C

ts

IC, COLLECTOR CURRENT (mA)

Figure 2. Turn–On Time

Figure 3. Turn–Off Time

VCC = 3.0 V

VCC = 3.0 V

270 +10.75 V 3.3 k 0 –1.5 V PULSE WIDTH = 300 ns tr < 1.0 ns DUTY CYCLE ≤ 2.0% CS < 4.0 pF 0 –4.15 V PULSE WIDTH = 300 ns tf ≤ 1.0 ns DUTY CYCLE ≤ 2.0% SCOPE +10.75 V 3.3 k

270 SCOPE

CS < 4.0 pF

Figure 4. Turn–On Test Circuit

Figure 5. Turn–Off Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–467

MPQ2369
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 5.0 TJ = 25°C Cib 2.0 k VCE = 10 V f = 100 MHz 1.0 k 700 500

3.0 C, CAPACITANCE (pF) 2.0

Cob

1.0 0.7 0.5 0.05

300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Figure 7. Current–Gain — Bandwidth Product

500 300 200 h FE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 V, VOLTAGE (VOLTS) 25°C –55°C TJ = 150°C

1.4 TJ = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.2 0.5 1.0 VCE(SAT) @ IC/IB = 10 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = 1.0 V

2.0

5.0

10

20

50

100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

Figure 9. “ON” Voltages

V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

+2.0

q V , TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C 0.8 30 mA 0.6 100 mA 200 mA

*APPLIES FOR IC/IB ≤ hFE/3.0 +1.0 *qVC FOR VCE(SAT) 0 25°C TO 150°C –55°C TO 25°C 25°C TO 150°C

0.4

–1.0

qVB FOR VBE
–2.0 –55°C TO 25°C –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

0.2

IC = 10 mA 0.1 0.2 0.5 5.0 10 20 50

0 0.05

1.0

2.0

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 10. Collector Saturation Region

Figure 11. Temperature Coefficients

2–468

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Transistors
NPN Silicon
14 13 12 11 10 9 8 NPN

MPQ2483 MPQ2484*
*Motorola Preferred Device

1

2

3

4

5

6

7

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg 2.4 19.2 Watts mW/°C °C 900 7.2 mW mW/°C Value 40 60 6.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 646–06, STYLE 1 TO–116
14 1

–55 to +150

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 134 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 — — — — — — — — — — 20 20 Vdc Vdc Vdc nAdc nAdc

1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–469

MPQ2483 MPQ2484
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(2) (IC = 0.1 mAdc, VCE = 5.0 Vdc) hFE MPQ2483 MPQ2484 MPQ2483 MPQ2484 MPQ2483 MPQ2484 VCE(sat) — — VBE(sat) — — 0.58 0.70 0.7 0.8 0.13 0.15 0.35 0.5 Vdc 100 200 150 300 150 300 — — — — — — — — — — — — Vdc —

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage(2) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k ohms, f = 1.0 kHz, BW = 10 kHz) 2. Pulse Test: Pulse Width MPQ2483 MPQ2484 fT Cibo Ccb NF — — 3.0 2.0 — — 50 — — 100 4.0 1.8 — 8.0 6.0 MHz pF pF dB

v 300 ms; Duty Cycle v 2.0%.

2–470

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistors
NPN/PNP Silicon
14 13 12 11 10 9 8 1 2 3 4 5 6 7

MPQ6100A MPQ6600A1*
Voltage and Current are negative for PNP Transistors
*Motorola Preferred Device

MPQ6100A TYPE A
14 13 12 11 10 9 8

COMPLEMENTARY

1

2

3

4

5

6

7

MPQ6600A1 TYPE B
14 1

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg –55 to +150 2.4 19.2 Watts mW/°C °C 900 7.2 mW mW/°C MPQ6100A MPQ6600A1 45 60 5.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

1. RθJA is measured with the device soldered into a typical printed circuit board.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–471

MPQ6100A MPQ6600A1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CEO MPQ6100A, 6600A1 V(BR)CBO 60 V(BR)EBO 5.0 ICBO — — 10 — — nAdc — — Vdc 45 — — Vdc Vdc

ON CHARACTERISTICS(2)
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 µAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 µAdc) Base – Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 µAdc) hFE MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 VCE(sat) — VBE(sat) — — 0.8 — 0.25 Vdc 100 150 150 125 — — — — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 10 kHz) PNP NPN Cibo PNP NPN NF — — — — — 4.0 8.0 8.0 — dB fT Cobo — — 1.2 1.8 4.0 4.0 pF 50 — — MHz pF

MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)
DC Current Gain Ratio (IC = 100 µAdc, VCE = 5.0 Vdc) Base–Emitter Voltage Differential (IC = 100 µAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width hFE1/hFE2 |VBE1–VBE2| 0.8 — — — 1.0 20 — mVdc

v 300 ms; Duty Cycle v 2.0%.

2–472

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6100A MPQ6600A1
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)

12 NOISE FIGURE (dB) –1 mA NOISE FIGURE (dB) 10 8 6 4 2 0 –100 µA –10 µA 1.0 k 10 k Rs, SOURCE RESISTANCE (OHMS) 100 k

12 10 8 6 4 2 0 –10 µA –1 mA –100 µA

1.0 k 10 k Rs, SOURCE RESISTANCE (OHMS)

100 k

Figure 1. Source Resistance Effects, f = 1.0 kHz
Rs SOURCE RESISTANCE 12 NOISE FIGURE (dB) 10 8 6 4 2 0 1.0 k 10 k f, FREQUENCY (Hz) 100 k 0

Figure 2. Source Resistance Effects, f = 10 Hz

IC = –100 µA, RS = 30 kΩ hFE, DC CURRENT GAIN IC = –10 µA, RS = 100 kΩ IC = –1.0 mA, RS = 1.0 kΩ IC = –10 µA, RS = 10 kΩ IC = –100 µA, RS = 3.0 kΩ 800

VCE = – 5.0 Vdc TA = 125°C 600 TA = 25°C 400 TA = – 55°C 200

– 0.01 – 0.1 – 1.0 IC, COLLECTOR CURRENT (mAdc)

– 10

Figure 3. Frequency Effects

Figure 4. Typical Current Gain Characteristics

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–473

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad General Purpose Transistors
PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7

MPQ2906 MPQ2907 MPQ2907A*
*Motorola Preferred Device

14

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MPQ2906 MPQ2907 –40 –60 –5.0 –600 Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 6.5 Total Device 1.9 19 Watts mW/°C °C MPQ2907A –60 Unit Vdc Vdc Vdc mAdc

1

CASE 646–06, STYLE 1 TO–116

–55 to +125

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 66 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IE = 0) 1. Pulse Test: Pulse Width MPQ2906, MPQ2907 MPQ2907A IEBO MPQ2906,7 Only — –50 nAdc V(BR)CEO MPQ2906, MPQ2907 MPQ2907A V(BR)CBO V(BR)EBO ICBO –40 –60 –60 –5.0 — — — — — –50 Vdc Vdc nAdc Vdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

2–474

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ2906 MPQ2907 MPQ2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = –100 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (IC = –300 mAdc, VCE = –10 Vdc) (IC = –500 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –300 mAdc, IB = –30 mAdc) (IC = –500 mA, IB = –500 mA) Base – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –300 mAdc, IB = –30 mAdc) (IC = –500 mA, IB = –50 mA) hFE MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2906 MPQ2907 MPQ2907A VCE(sat) MPQ2906, MPQ2907 MPQ2907A VBE(sat) MPQ2906, MPQ2907 MPQ2906, MPQ2907 MPQ2907A — — — –1.3 –2.6 –2.6 — — — –0.4 –1.6 –1.6 Vdc 75 100 35 75 100 100 40 100 20 30 50 — — — — — 300 — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — — 8.0 30 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = –30 Vdc, IC = –150 mAdc, IB1 = 15 mAdc) Turn–Off Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2907A Only toff MPQ2907A Only — 180 ns — 45 ns

v 300 ms, Duty Cycle v 2.0%.

–30 INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns 1.0 k 0 –16 V 200 ns 50 INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ms 1.0 k 0 –30 V 200 ns 50

+15 V

–6.0

200

1.0 k

37

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–475

MPQ2906 MPQ2907 MPQ2907A
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +175°C +25°C

1.0 0.7 0.5

–55°C 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) VCE = 10 V VCE = 1.0 V

Figure 3. DC Current Gain
2.0 TJ = 25°C 1.6 “ON” VOLTAGE (VOLTS) COEFFICIENT (mV/° C) VBE(sat) @ IC/IB = 10 +1.0 +2.0

qVC FOR VCE(sat)
–55°C TO +25°C

1.2

0

+25°C TO +175°C

0.8 VBE @ VCE = 1.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.5

–1.0

qVB FOR VBE
+25°C TO +175°C

–2.0 –55°C TO +25°C –3.0 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. “ON” Voltages

Figure 5. Temperature Coefficients

(VCE = 10 V, TA = 25°C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 VCE = 10 Vdc TA = 25°C NF, NOISE FIGURE (dB) IC = 10 mA RS = 4.7 kW IC = 1.0 mA RS = 0.7 kW IC = 100 mA RS = 1.2 kW 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 10 IC = 10 mA 100 mA f = 1.0 kHz

NOISE FIGURE

8.0

6.0

4.0

2.0

1.0 mA

VCE = 10 Vdc TA = 25°C 0.5 1.0 2.0 5.0 10 20 50 100

0 0.1 0.2 RS, SOURCE RESISTANCE (k OHMS)

Figure 6. Frequency Effects

Figure 7. Source Resistance Effects

2–476

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ2906 MPQ2907 MPQ2907A
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 600 400 VCE = 20 Vdc f = 100 MHz TJ = 25°C C, CAPACITANCE (pF) 30 20 Cib Cob TJ = 25°C f = 100 kHz

200

10 7.0 5.0

100 80 60

3.0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Current–Gain — Bandwidth Product

Figure 9. Capacitance

500 300 200 100 70 50 30 20 10 5.0 7.0 td Q, CHARGE (pC) t, TIME (ns) tr IC/IB = 10 TJ = 25°C VCC = 30 V, VBE(off) = 2.0 V VCC = 10 V, VBE(off) = 0 V

5000 3000 2000 1000 700 500 300 200 QA, ACTIVE REGION CHARGE VCC = 30 V TJ = 25°C QT, TOTAL CONTROL CHARGE

10

20

30

50

70 100

200 300

500

100 5.0 7.0

10

20

30

50

70 100

200 300

500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 10. Turn–On Time

Figure 11. Charge Data

500 300 t s , STORAGE TIME (ns) 200 100 70 50 30 20 IC/IB = 20 IC/IB = 10 t′s – ts – 1/8 tf t f , FALL TIME (ns)

500 300 200 IC/IB = 20 100 70 50 30 20 10 5.0 7.0 IC/IB = 10 VCC = 30 V IB1 = IB2 TJ = 25°C

IB1 = IB2 TJ = 25°C

10 5.0 7.0

10

20

30

50

70 100

200 300

500

10

20

30

50

70 100

200 300

500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 12. Storage Time

Figure 13. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–477

MPQ2906 MPQ2907 MPQ2907A

P.W. 200 ns tr ≤ 2.0 ns DUTY CYCLE ≤ 2.0%

u

–30 V

200 SCOPE

P.W. ≈ 1.0 ms tr ≤ 2.0 ns DUTY CYCLE ≤ 2.0% +13.8 V

–30 V

200 SCOPE

1.0 k 0 –16 V

1.0 k 0 –16.2 V 1N916

–3.0 V

Figure 14. Delay and Rise Time Test Circuit

Figure 15. Storage and Fall Time Test Circuit

2–478

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Memory Driver Transistor
PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7

MPQ3467
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 650 5.2 PD 1.25 10 TJ, Tstg –55 to +150 3.2 25.6 Watts mW/°C °C 1500 12 mW mW/°C Value –40 –40 –5.0 –1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc CASE 646–06, STYLE 1 TO–116
14 1

THERMAL CHARACTERISTICS
RqJC Junction to Case 100 39 45 5.0 RqJA Junction to Ambient 193 83.2 55 10

Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4

Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –40 –40 –5.0 — — — — — — — — — — –200 –200 Vdc Vdc Vdc nAdc nAdc

1. Second Breakdown occurs at power levels greater than 2 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–479

MPQ3467
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(2) (IC = –500 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage(2) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(2) (IC = –500 mAdc, IB = –50 mAdc) hFE VCE(sat) VBE(sat) –20 — — — –0.23 –0.90 — –0.5 –1.2 — Vdc Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 125 — — 190 10 55 — 25 80 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = –500 mAdc, IB1 = –50 mAdc) Turn–Off Time (IC = –500 mAdc, IB1 = IB2 = –50 mAdc) 2. Pulse Test: Pulse Width ton toff — — — — 40 90 ns ns

v 300 ms; Duty Cycle v 2.0%.

2–480

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3467
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = – 30 V TJ = 25°C TJ = 125°C βF = 10, 20 βF = 10 βF = 20 t′s ≈ ts – 1/8 tf 20 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) – 1.6 – 1.4 – 1.2 – 1.0 VBE(sat) – 0.8 – 0.6 – 0.4 – 0.2 0 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN βF = 10 TJ = 25°C MAX

t ′sv, STORAGE TIME (ns)

100 70 50

30

Figure 1. Storage Time Variation with Temperature

Figure 2. Limits of Saturation Voltage

70 hFE , MINIMUM CURRENT GAIN 50

TJ = 125°C TJ = 25°C

VCE = – 1.0 V VCE = – 2.0 V

30

TJ = – 55°C

20

10 – 50

– 70

– 100

– 200 – 300 IC, COLLECTOR CURRENT (mA)

– 500

– 700

– 1000

Figure 3. Minimum Current Gain Characteristics

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–481

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Core Driver Transistor
NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7

MPQ3725
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCES VEBO IC One Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 1.0 8.0 TJ, Tstg –55 to +150 2.5 20 Watts mW/°C °C Value 40 60 5.0 1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc

14 1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Symbol Max One Transistor Thermal Resistance, Junction to Ambient(1) RqJA 125 Effective For Four Transistors 50 °C/W Unit

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 — — — — — — — — 0.5 Vdc Vdc Vdc

mAdc

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

2–482

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3725
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) — 0.8 75 45 0.32 0.9 200 — 0.45 1.1 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 250 — — 275 5.1 62 — 10 80 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 500 mAdc, IB1 = 50 mAdc VBE(off) = –3.8 Vdc) Turn–Off Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 2. Pulse Test: Pulse Width ton — 20 35 ns

toff

50

60

ns

v 300 ms; Duty Cycle v 2.0%.
–3.8 V +30 V 15 1.0 k 43 +9.7 V 0 PULSE GENERATOR tr, tf ≤ 1.0 ns PW ≈ 1.0 ms Zin = 50 W DUTY CYCLE ≤ 2.0% 62 1.0 mF 100 1.0 mF TO SAMPLING OSCILLOSCOPE Zin ≥ 100 kW tr < 1.0 ns

Figure 1. Switching Times Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–483

MPQ3725
2.0 IC , COLLECTOR CURRENT (AMP) 1.0 0.5 0.3 0.2 TJ = 200°C 0.1 0.05 0.03 0.02 3.0 SECOND BREAKDOWN LIMITED THERMAL LIMITATION @ TC = 25°C PULSE DUTY CYCLE ≤ 10% APPLICABLE TO RATED BVCEO 4.0 6.0 8.0 10 20 30 40 60 dc

10 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. Active–Region Safe Operating Area

TYPICAL DC CHARACTERISTICS
400 TJ = 125°C h FE , DC CURRENT GAIN 200 25°C 100 80 60 40 –55°C V, VOLTAGE (VOLTS) VCE = 1.0 V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 20 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) 0 10 VCE(sat) @ IC/IB = 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 TJ = 25°C

Figure 3. DC Current Gain

Figure 4. “ON” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8

+2.5

qV, TEMPERATURE COEFFICIENT (mV/ °C)

+2.0 +1.5 +1.0 +0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 10 20 30 50 *qVC FOR VCE(sat)

*APPLIES FOR IC/IB < hFE/2

0.6

1000 mA 800 mA 500 mA IC = 100 mA 1.0 2.0 5.0 10 20 300 mA

0.4

0.2

qVB FOR VBE

0 0.5

50

100

200

500

100

200 300

500

1000

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Collector Saturation Region

Figure 6. Temperature Coefficients

2–484

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3725
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 500 VCE = 10 Vdc f = 100 MHz TJ = 25°C 100 70 50 C, CAPACITANCE (pF) 30 20 Cob Cib TJ = 25°C

300 200

100 70 50 4.0

10 7.0 5.0

6.0

10

20

40

60

100

200

400

3.0 0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Current–Gain — Bandwidth Product

Figure 8. Capacitance

200 100 50 t, TIME (ns) 30 20 10 5.0 3.0 2.0 10 20 30 td @ VBE(off) = 0 V VBE(off) = –3.8 Vdc VCC = 30 Vdc 50 100 200 300 500 1000 IC /IB = 10 TJ = 25°C

200 tf @ IC/IB = 10 100 tr @ VCC = 10 Vdc tr @ VCC = 30 Vdc t, TIME (ns) 70 50 30 20 tf @ IC/IB = 20 ts @ IC/IB = 20 ts @ IC/IB = 10 VCC = 10 Vdc TJ = 25°C

10 10 20 30 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 9. Turn–On Time

Figure 10. Turn–Off Time

I CES , COLLECTOR CUTOFF CURRENT ( m A)

1000

100 VCE = 60 VCE = 30 VCE = 10

10

1.0

0.1

0.01 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Collector Cutoff Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–485

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Memory Driver Transistor
PNP Silicon

14

13

12

11

10

9

8

MPQ3762

PNP

1

2

3

4

5

6

7

14

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg –55 to +150 3.2 25.6 Watts mW/°C °C 1700 13.6 mW mW/°C Value –40 –40 –5.0 –1.5 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc

1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –40 –40 –5.0 — — — — — — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc

v

v

2–486

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3762
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = –150 mAdc, VCE = –1.0 Vdc) (IC = –500 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, VCE = –2.0 Vdc) Collector – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) Base – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) hFE 35 30 20 VCE(sat) — — VBE(sat) — — –0.9 –1.0 –1.25 –1.4 –0.3 –0.6 –0.55 –0.9 Vdc 70 65 35 — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 150 — — 275 9.0 55 — 15 80 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = –30 Vdc, IC = –1.0 Adc, IB1 = –100 mAdc, VBE(off) = 2.0 Vdc) Turn–Off Time (VCC = –30 Vdc, IC = –1.0 Adc, IB1 = IB2 = –100 mAdc) 2. Pulse Test: Pulse Width ton toff — — — — 50 120 ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–487

MPQ3762
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = – 30 V TJ = 25°C TJ = 125°C βF = 10, 20 βF = 10 βF = 20 t′s ≈ ts – 1/8 tf 20 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) – 1.6 – 1.4 – 1.2 – 1.0 VBE(sat) – 0.8 – 0.6 – 0.4 – 0.2 0 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN βF = 10 TJ = 25°C MAX

t ′sv, STORAGE TIME (ns)

100 70 50

30

Figure 1. Storage Time Variation with Temperature

Figure 2. Limits of Saturation Voltage

70 hFE , MINIMUM CURRENT GAIN 50

TJ = 125°C TJ = 25°C

VCE = – 1.0 V VCE = – 2.0 V

30

TJ = – 55°C

20

10 – 50

– 70

– 100

– 200 – 300 IC, COLLECTOR CURRENT (mA)

– 500

– 700

– 1000

Figure 3. Minimum Current Gain Characteristics

2–488

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Transistors
PNP Silicon
14 13 12 11 10 9 8 PNP

MPQ3798 MPQ3799*
*Motorola Preferred Device

1

2

3

4

5

6

7

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.5 4.0 PD 0.825 6.7 TJ, Tstg –55 to +150 2.4 19.2 Watts m/°C °C 0.9 7.2 Watts mW/°C MPQ3798 –40 –60 –5.0 –50 Four Transistors Equal Power MPQ3799 –60 Unit Vdc Vdc Vdc mAdc CASE 646–06, STYLE 1 TO–116
14 1

THERMAL CHARACTERISTICS
RqJC Junction to Case 151 52 34 2.0 RqJA Junction to Ambient 250 139 70 26

Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4

Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) V(BR)CEO MPQ3798 MPQ3799 V(BR)CBO V(BR)EBO ICBO IEBO –40 –60 –60 –5.0 — — — — — — — — — — — — –10 –20 Vdc Vdc nAdc nAdc Vdc

1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–489

MPQ3798 MPQ3799
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) (IC = –500 mAdc, VCE = –5.0 Vdc) hFE MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 VCE(sat) — — VBE(sat) — — –0.62 –0.68 –0.7 –0.8 –0.12 –0.07 –0.2 –0.25 Vdc 100 225 150 300 150 300 125 250 — — — — — — — — — — — — — — — — Vdc —

(IC = –10 mAdc, VCE = –5.0 Vdc) Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) (IC = –1.0 mAdc, IB = –100 mAdc) Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) (IC = –1.0 mAdc, IB = –100 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –100 mAdc, VCE = –10 Vdc, RS = 3.0 k ohms, f = 1.0 kHz) MPQ3798 MPQ3799 fT Cobo Cibo NF — — 2.5 1.5 — — 60 — — 250 2.1 5.5 — 4.0 8.0 MHz pF pF dB

2–490

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3798 MPQ3799
1000 500 h FE , CURRENT GAIN h FE , CURRENT GAIN 0.1 1000 500

200 100

200 100

10 0.01 1.0 10 100 IC, COLLECTOR CURRENT (mA)

10 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain versus Collector Current

Figure 2. DC Current Gain versus Collector Current

1.0

1.0

0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 V, VOLTAGE (VOLTS)

0.8 VBE(sat) @ IC/IB = 10 0.6

0.4

0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1.0 10 100

0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1.0 10 100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. “ON” Voltages

Figure 4. “ON” Voltages

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–491

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Switching Transistor
NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7

MPQ3904
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2.4 19.2 –55 to +150 Watts mW/°C °C 900 7.2 mW mW/°C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc

14 1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 40 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 — — — — — — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–492

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) — — 90 160 200 0.1 0.65 — — — 0.2 0.85 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 250 — — 300 2.0 4.0 — 4.0 8.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = 10 mAdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc) Turn–Off Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff — — 37 136 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–493

MPQ3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V′ < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

2–494

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time
500 300 200 ts ′ , STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

t′s = ts – 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA

SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA

IC = 0.5 mA IC = 50 mA

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9.

Figure 10.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–495

MPQ3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50

h fe , CURRENT GAIN

200

20 10 5

100 70 50

2 1

30

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain
20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

2.0 1.0 0.5

h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 5.0 10

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1.0 V

h FE, DC CURRENT GAIN (NORMALIZED)

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

2–496

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C)

1.0 0.5 +25°C TO +125°C

qVC FOR VCE(sat)
0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

0

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

Figure 18. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–497

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Switching Transistor
PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7

MPQ3906
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg –55 to +150 2.4 19.2 Watts mW/°C °C 900 7.2 mW mW/°C Value –40 –40 –5.0 –200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc

14 1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –40 –40 –5.0 — — — — — — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

2–498

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE 40 60 75 VCE(sat) VBE(sat) — — 160 180 200 –0.1 –0.65 — — — –0.25 –0.85 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — 250 3.3 4.8 — 4.5 10 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time (IC = –10 mAdc, VBE(off) = 0.5 Vdc, IB1 = –1.0 mAdc) Turn–Off Time (IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) 1. Pulse Test: Pulse Width ton toff — — 43 155 — — ns ns

v 300 ms; Duty Cycle v 2.0%.

3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns

3V 275

CS < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–499

MPQ3906
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10

QT QA

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)

20 30 40

1.0

2.0 3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200

Figure 4. Charge Data

VCC = 40 V IB1 = IB2 IC/IB = 20

t f , FALL TIME (ns)

100 70 50 30 20 10 7 5 IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time

Figure 6. Fall Time

2–500

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ3906
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA

NF, NOISE FIGURE (dB)

4.0

3.0

2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100

1.0

0 0.1

0.1

0.2

0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS)

40

100

Figure 7.

Figure 8.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20

h fe , DC CURRENT GAIN

200

100 70 50

10 7

30

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

5

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0

Figure 10. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–501

MPQ3906
TYPICAL STATIC CHARACTERISTICS
2.0

h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C +25°C – 55°C

VCE = 1.0 V

1.0 0.7 0.5 0.3 0.2

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 14. Collector Saturation Region
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 – 0.5 +25°C TO +125°C – 1.0 – 1.5 – 2.0 – 55°C TO +25°C

q V , TEMPERATURE COEFFICIENTS (mV/ °C)

qVC FOR VCE(sat)

+25°C TO +125°C – 55°C TO +25°C

0.6

0.4 VCE(sat) @ IC/IB = 10

0.2

qVB FOR VBE(sat)

0

1.0

2.0

50 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100

200

0

20

40

60 80 100 120 140 IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 15. “ON” Voltages

Figure 16. Temperature Coefficients

2–502

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistors
NPN/PNP Silicon

14

13

12

11

10

9

8

1

2

3

4

5

6

7

MPQ6001 MPQ6002 MPQ6502
Voltage and current are negative for PNP transistors

MPQ6001, MPQ6002 TYPE A
14 13 12 11 10 9 8

COMPLEMENTARY

1

2

3

4

5

6

7

MPQ6502 TYPE B

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) MPQ6001, MPQ6002, MPQ6502 Derate above 25°C MPQ6001, MPQ6002, MPQ6502 Total Device Dissipation @ TC = 25°C MPQ6001, MPQ6002, MPQ6502 Derate above 25°C MPQ6001, MPQ6002, MPQ6502 Operating and Storage Junction Temperature Range PD Watts 0.65 1.25 mW/°C 5.18 PD Watts 1.0 3.0 mW/°C 8.0 TJ, Tstg –55 to +150 24 °C 10 Value 30 60 5.0 500 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Each Die Effective, 4 Die Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 Junction to Case 125 41.6 30 20 Junction to Ambient 193 100 % 60 24 Unit °C/W

1. Voltage and Current are negative for PNP devices.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–503

MPQ6001 MPQ6002 MPQ6502
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 60 5.0 — — — — — — — — — — 30 30 Vdc Vdc Vdc nAdc nAdc

ON CHARACTERISTICS
DC Current Gain(2) (IC = 1.0 mAdc, VCE = 10 Vdc) hFE MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 VCE(sat) — — VBE(sat) — — — — 1.3 2.0 — — 0.4 1.4 Vdc 25 50 35 75 40 100 20 30 — — — — — — — — — — — — — — — — Vdc —

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 300 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) Base – Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) PNP NPN Cibo PNP NPN — — 20 17 30 30 fT Cobo — — 6.0 4.5 8.0 8.0 pF 200 350 — MHz pF

SWITCHING CHARACTERISTICS
Turn–On Time (VCC = 30 Vdc, VEB = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc, Figure 1) Turn–Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 2. Pulse Test: Pulse Width ton — 30 — ns

toff

225

ns

v 300 ms; Duty Cycle v 2.0%.

2–504

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6001 MPQ6002 MPQ6502
NPN DATA
4.0 h FE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 +25°C 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) –55°C TJ = 150°C VCE = 1.0 V VCE = 10 V

Figure 1. Normalized DC Current Gain
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 2.0 VCE(sat) @ IC/IB = 10 5.0 10 20 50 100 200 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V +1.6

q V , TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C

+0.8

+25°C TO +150°C

qVC FOR VCE(sat)
0 –55°C TO +25°C

–0.8

–1.6

qVB FOR VBE
0.5 1.0 2.0 5.0 10 20 50 100 200 500

–2.4 IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 2. “ON” Voltages

Figure 3. Temperature Coefficients

(VCE = 10 Vdc, TA = 25°C)
6.0 5.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA

NOISE FIGURE

6.0

4.0

2.0

0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 4. Frequency Effects

Figure 5. Source Resistance Effects

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–505

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Darlington Transistor
NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7

MPQ6426

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 30 40 12 500 Four Die Equal Power 900 7.2 2400 19.2 mW mW/°C mW mW/°C °C Unit Vdc Vdc Vdc mAdc

14 1

CASE 646–06, STYLE 1 TO–116

Each Die Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 500 4.0 825 6.7

–55 to +150

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 40 V(BR)EBO 12 ICBO — IEBO — 100 100 nAdc — nAdc — Vdc — Vdc Vdc

1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

2–506

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6426
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 5000 10,000 VCE(sat) — VBE(on) — 2.0 1.5 Vdc — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width fT 125 Cobo — Cibo — 15 8.0 pF — pF MHz

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–507

MPQ6426
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n , NOISE CURRENT (pA) 10 mA 100 mA 20 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) IC = 1.0 mA BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 100 mA 10 mA

500

200 e n , NOISE VOLTAGE (nV) 100 50

IC = 1.0 mA

Figure 1. Noise Voltage

Figure 2. Noise Current

V T , TOTAL WIDEBAND NOISE VOLTAGE (nV)

200 BANDWIDTH = 10 Hz TO 15.7 kHz 70 50 30 20 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 100 mA IC = 10 mA NF, NOISE FIGURE (dB) 100

14 12 10 8.0 6.0 4.0 2.0 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW) IC = 1.0 mA 100 mA BANDWIDTH = 10 Hz TO 15.7 kHz 10 mA

Figure 3. Total Wideband Noise Voltage

Figure 4. Wideband Noise Figure

DYNAMIC CHARACTERISTICS
20 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 Cib Cob h fe , SMALL–SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C

2.0

1.0 0.8 0.6 0.4 0.2

3.0 2.0 0.04

0.1

0.2

0.4

1.0

2.0

4.0

10

20

40

0.5

1.0

2.0

5.0

10

20

50

100

200

500

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitance

Figure 6. High Frequency Current Gain

2–508

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistor
NPN/PNP Silicon

MPQ6700
14 13 12 11 10 9 8

MPQ6502
For Specifications, See MPQ6001 Data

COMPLEMENTARY

1

2

3

4 TYPE B

5

6

7

MPQ6600A1
For Specifications, See MPQ6100A Data

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2400 19.2 –55 to +150 mW mW/°C °C CASE 646–06, STYLE 1 TO–116 TYPE B 900 7.2 mW mW/°C
14 1

Value 40 40 5.0 200 Four Transistors Equal Power

Unit Vdc Vdc Vdc mAdc

Voltage and current are negative for PNP transistors

Motorola Preferred Device

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 ICBO — IEBO — 50 50 nAdc — nAdc — Vdc — Vdc Vdc

1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–509

MPQ6700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 70 VCE(sat) — VBE(sat) — 0.9 0.25 Vdc — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width PNP NPN fT 200 Cobo — Cibo — — 10 8.0 4.5 pF — pF MHz

v 300 ms; Duty Cycle v 2.0%.

2–510

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6700
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125°C 25°C –55°C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 –0.2 VCE = –1.0 V VCE = –5.0 V –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 TJ = 125°C

25°C

–55°C

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10

1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –1.0 V

0.6

0.4

0.4

0.2

VCE(sat) @ IC/IB = 10

0.2 VCE(sat) @ IC/IB = 10 100 200 0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

0 0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. “ON” Voltage

Figure 4. “ON” Voltage

+2.0

+2.0 * APPLIES FOR IC/IB ≤ hFE/2.0

q V , TEMPERATURE COEFFICIENT (mV/°C)

q V , TEMPERATURE COEFFICIENT (mV/°C)

* APPLIES FOR IC/IB ≤ hFE/2.0 +1.0 25°C TO 125°C

+1.0

*qVC FOR VCE(sat)
0

25°C TO 125°C –55°C TO 25°C 25°C TO 125°C

*qVC FOR VCE(sat)
0 –55°C TO 25°C 25°C TO 125°C

–1.0

–1.0

qVB FOR VBE
–2.0

–55°C TO 25°C

–2.0

qVB FOR VBE

–55°C TO 25°C

–3.0 0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

–3.0 –0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50 –100 –200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

Figure 6. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–511

MPQ6700
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA –1.0 TJ = 25°C –0.8 IC = –1.0 mA –10 mA –50 mA –100 mA

0.6

–0.6

0.4

–0.4

0.2

–0.2 0 –0.005 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 IB, BASE CURRENT (mA)

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0

10 20

50 100

–50

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

Figure 8. Collector Saturation Region

500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 2.0 V VBE(off) = 0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 TJ = 25°C

500 300 200 100 70 50 30 20 Tr @ VCC = –3.0 V 10 7.0 5.0 –2.0 –3.0 –5.0 –7.0 –10 –2.0 V td @ VBE(off) = 0 –20 –30 –50 –70 –100 –200 tr @ VCC = –40 V IC/IB = 10 TJ = 25°C

t, TIME (ns)

tr @ VCC = 3.0 V 40 V

IC, COLLECTOR CURRENT (mA)

t, TIME (ns)

IC, COLLECTOR CURRENT (mA)

Figure 9. Turn–On Time

Figure 10. Turn–On Time

500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 tf @ IC/IB = 10

t′s = ts = 1/8 tf VCC = 3.0 V IB1 = IB2 TJ = 25°C 20 t, TIME (ns) IC/IB = 10 IC/IB = 20

500 300 200 100 70 50 30 20 10 7.0 5.0 –2.0 –3.0 tf @ IC/IB = 10 IC/IB = 20 t′s = ts – 1/8 tf VCC = –40 V IB1 = IB2 IC/IB = 10 IC/IB = 20

t, TIME (ns)

5.0 7.0 10

20

30

50 70 100

200

–5.0 –7.0 –10

–20

–30

–50 –70 –100

–200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. Turn–Off Time

Figure 12. Turn–Off Time

2–512

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6700
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 500 TJ = 25°C VCE = 20 V f = 100 MHz 700 500 TJ = 25°C VCE = –20 V f = 100 MHz

300 200 150 100 70 50 0.3

300 200

100 70 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30

0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 13. Current–Gain — Bandwidth Product

Figure 14. Current–Gain — Bandwidth Product

7.0 5.0 C, CAPACITANCE (pF) TJ = 25°C C, CAPACITANCE (pF)

10 7.0 5.0 Cib 3.0 2.0 Cob TJ = 25°C

3.0 2.0 1.5 1.0 0.7 0.06 0.1 0.2 0.4 0.6 1.0 2.0

Cib

Cob 1.0 –0.04

4.0 6.0 10

20

40 60

–0.1 –0.2 –0.4

–1.0 –2.0

–4.0

–10

–20

–40

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Capacitance

Figure 16. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–513

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistor
NPN/PNP Silicon

MPQ6842
14 13 12 11 10 9 8 COMPLEMENTARY

Voltage and current are negative for PNP transistors
6 7

1

2

3

4 TYPE B

5

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25°C(1) Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg –55 to +150 2400 19.2 mW mW/°C °C 900 7.2 mW mW/°C Value 30 30 4.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 646–06, STYLE 1 TO–116 TYPE B
14 1

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IE = 0) V(BR)CEO 30 V(BR)CBO 30 V(BR)EBO 4.0 ICBO — IEBO — — 50 — 50 nAdc — — nAdc — — Vdc — — Vdc Vdc

1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

v

v

2–514

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6842
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0°C ≤ T ≤ 70°C) Base – Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 VCE(sat) — VBE(sat) — 0.65 0.9 0.05 0.15 Vdc — — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP NPN fT 200 Cobo — Cibo — — 5.0 4.0 10 8.0 3.0 4.5 pF 350 — pF MHz

SWITCHING CHARACTERISTICS (TA = 25°C, VCC = 5.0 Vdc)
Propagation Delay Time (50% Points TP1 to TP3) (50% Points TP2 to TP4) Rise Time (0.3 V to 4.7 V, TP3 or TP4) Fall Time (4.7 V to 0.3 V, TP3 or TP4) 2. Pulse Test: Pulse Width ns tPLH tPHL tr 5.0 tf 5.0 10 20 25 35 ns — — 15 6.0 25 15 ns

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–515

MPQ6842
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125°C 25°C –55°C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 –0.2 VCE = –1.0 V VCE = –5.0 V –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 TJ = 125°C

25°C

–55°C

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10

–1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V

–0.6

0.4

–0.4

0.2

VCE(sat) @ IC/IB = 10

–0.2 VCE(sat) @ IC/IB = 10 100 200 0 –0.2 –0.5 –1.0 –2.0 –4.0 –10 –20 –40 –100

0 0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. “ON” Voltage

Figure 4. “ON” Voltage

+2.0

+2.0 * APPLIES FOR IC/IB ≤ hFE/2.0

q V , TEMPERATURE COEFFICIENT (mV/°C)

q V , TEMPERATURE COEFFICIENT (mV/°C)

* APPLIES FOR IC/IB ≤ hFE/2.0 +1.0 25°C TO 125°C

+1.0

*qVC FOR VCE(sat)
0

25°C TO 125°C –55°C TO 25°C 25°C TO 125°C

*qVC FOR VCE(sat)
0 –55°C TO 25°C 25°C TO 125°C

–1.0

–1.0

qVB FOR VBE
–2.0

–55°C TO 25°C

–2.0

qVB FOR VBE

–55°C TO 25°C

–3.0 0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

–3.0 –0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50 –100 –200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

Figure 6. Temperature Coefficients

2–516

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ6842
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA –1.0 TJ = 25°C –0.8 IC = –1.0 mA –10 mA –50 mA –100 mA

0.6

–0.6

0.4

–0.4

0.2

–0.2 0 –0.005 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 IB, BASE CURRENT (mA)

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0

10 20

50 100

–50

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

Figure 8. Collector Saturation Region

33 pF 1k 6 4.7 k 1/4 MC3001 (74H08)

VCC +5 V 5 7 22 TP3
NOTES: 1. Unless otherwise noted, all resistors carbon composition 1/ W ±5%, all capacitors dipped mica ±2%. 4 2. Use short interconnect wiring with good power and ground buses. 3. TP1 thru TP4 are coaxial connectors to accept scope probe tip and provide a good ground. 4. Device under test is MPQ6842. 5. 160 pF load does not include stray or scope probe capacitance. 6. Scope probe resistance > 5 kW. Scope probe capacitance < 10 pF.

0.1 mF CERAMIC

68 pF TP1 2 PULSE GENERATOR 0 TO 5 V 51 tr, tf ≤ 2 ns PW ≈ 200 ns PERIOD ≈ 1000 ns 10 k 33 pF

10 160 pF 1 3 VCC +5 V 1 k 10 9 0.1 mF CERAMIC 8

4.7 k 1/4 MC3000 (74H00)

TP1 OR TP2 22 TP4 68 pF TP2 10 14 13 10 k 12 160 pF 4.7 V TP3 OR TP4 tf tPHL

50% tPLH

50% 0.3 V tr

Figure 9. Switching Times Test Circuit and Waveforms

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–517

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Transistors
NPN Silicon
14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7

MPQ7041 MPQ7042 MPQ7043*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current—Continuous Symbol VCEO VCBO VEBO IC Each Die Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg 3.2 25.6 –55 to +150 Watts mW/°C °C 1700 13.6 mW mW/°C MPQ7041 150 150 MPQ7042 200 200 5.0 500 Four Die Equal Power MPQ7043 250 250 Unit Vdc
14

Vdc Vdc mAdc

1

CASE 646–06, STYLE 1 TO–116

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPQ7041 MPQ7042 MPQ7043 V(BR)CBO MPQ7041 MPQ7042 MPQ7043 V(BR)EBO 5.0 ICBO MPQ7041 MPQ7042 MPQ7043 — — — — — — 100 100 100 — — nAdc 150 200 250 — — — — — — Vdc 150 200 250 — — — — — — Vdc Vdc

Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0)

Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) (VCB = 180 Vdc, IE = 0)

Preferred devices are Motorola recommended choices for future use and best overall value.

2–518

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ7041 MPQ7042 MPQ7043
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 40 VCE(sat) — VBE(sat) — 0.7 0.9 0.3 0.5 Vdc 45 60 80 — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 20 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) fT 50 Cobo — Cibo — 40 50 2.5 5.0 pF 80 — pF MHz

DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125°C 1.4 TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 100 70 –55°C 50 25°C 1.0 0.8 0.6 0.4 0.2 0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V

30 20 1.0

5.0

Figure 1. DC Current Gain
2.5

Figure 2. “ON” Voltages

q V , TEMPERATURE COEFFICIENT (mV/°C)

2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 1.0 2.0 3.0

IC/IB = 10

qVC FOR VCE(sat)

25°C TO 125°C –55°C TO 25°C –55°C TO 125°C

qVB FOR VBE

5.0 7.0

10

20

30

50

70

100

IC, COLLECTOR CURRENT (mA)

Figure 3. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–519

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Complementary Pair Transistor
NPN/PNP Silicon

14

13

12

11

10

9

8

MPQ7051
Voltage and current are negative for PNP transistors

COMPLEMENTARY

1

2

3

4 TYPE B

5

6

7

Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 150 150 5.0 500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/°C Watts mW/°C °C Unit Vdc Vdc Vdc mAdc CASE 646–06, STYLE 1 TO–116 TYPE B
14 1

Each Die Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 750 5.98 1.25 10

–55 to +150

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 150 V(BR)CBO 150 V(BR)EBO 5.0 ICBO — IEBO — 100 250 nAdc — nAdc — Vdc — Vdc Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

2–520

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPQ7051
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base – Emitter Saturation Voltage IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 35 25 VCE(sat) — VBE(sat) — 0.9 0.7 Vdc — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 20 Vdc, IC = 0, f =1.0 MHz) Input Capacitance (VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) NPN PNP fT 50 Cobo — Cibo — — 50 75 6.0 pF — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–521

MPQ7051
DC CHARACTERISTICS

200 VCE = 10 V h FE, DC CURRENT GAIN

TJ = 125°C h FE, DC CURRENT GAIN

200 VCE = –10 V

TJ = 125°C 25°C –55°C

100 70

25°C

100 70 50

–55°C 50

30 20 1.0

30 20 –1.0

2.0

3.0

5.0 7.0 10

20

30

50 70 100

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0

TJ = 25°C

–1.4 TJ = 25°C –1.2 V, VOLTAGE (VOLTS) –1.0 –0.8 –0.6 –0.4 –0.2 5.0 30 50 70 100 0 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V

VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V

VCE(sat) @ IC/IB = 10 5.0 7.0 10 20

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. “ON” Voltages

Figure 4. “ON” Voltages

2.5

2.5 IC/IB = 10

q V , TEMPERATURE COEFFICIENT (mV/°C)

q V , TEMPERATURE COEFFICIENT (mV/°C)

2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 1.0 2.0 3.0

2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 –1.0 –2.0 –3.0

IC/IB = 10 25°C TO 125°C

qVC FOR VCE(sat)

25°C TO 125°C –55°C TO 25°C –55°C TO 125°C

qVC FOR VCE(sat)

–55°C TO 25°C

qVB FOR VBE

qVB FOR VBE

–55°C TO 125°C

5.0 7.0

10

20

30

50

70

100

–5.0 –7.0 –10

–20 –30

–50 –70 –100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

Figure 6. Temperature Coefficients

2–522

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Amplifier Transistors
PNP Silicon
14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7

MPQ7091 MPQ7093*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MPQ7091 –150 –150 –5.0 –500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/°C Watts mW/°C °C MPQ7093 –250 –250 Unit Vdc Vdc Vdc mAdc
14 1

CASE 646–06, STYLE 1 TO–116

Each Die Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg

–55 to +150

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit °C/W °C/W % %

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) MPQ7091 MPQ7093 IEBO — — –100 V(BR)CEO MPQ7091 MPQ7093 V(BR)CBO MPQ7091 MPQ7093 V(BR)EBO –5.0 ICBO — — — — –250 –250 nAdc — — nAdc –150 –250 — — — — Vdc –150 –250 — — — — Vdc Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–523

MPQ7091 MPQ7093
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) hFE 25 35 25 VCE(sat) — VBE(sat) — –0.7 –0.9 –0.3 –0.5 Vdc 40 55 50 — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –20 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz) fT 50 Cobo — Cibo — 60 75 3.0 5.0 pF 70 — pF MHz

DC CHARACTERISTICS
200 VCE = –10 V h FE, DC CURRENT GAIN TJ = 125°C 25°C –55°C –1.4 TJ = 25°C –1.2 V, VOLTAGE (VOLTS) 100 70 50 –1.0 –0.8 –0.6 –0.4 –0.2 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 0 –1.0 –2.0 –3.0 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V

30 20 –1.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain
2.5

Figure 2. “ON” Voltages

q V , TEMPERATURE COEFFICIENT (mV/°C)

2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 –1.0 –2.0 –3.0

IC/IB = 10 25°C TO 125°C

qVC FOR VCE(sat)

–55°C TO 25°C

qVB FOR VBE

–55°C TO 125°C

–5.0 –7.0 –10

–20 –30

–50 –70 –100

IC, COLLECTOR CURRENT (mA)

Figure 3. Temperature Coefficients

2–524

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Chopper Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS404A
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –35 –40 –25 –150 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current (VBE = –10 Vdc, IC = 0) 2. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –35 –40 –25 — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–525

MPS404A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –12 mAdc, VCE = –0.15 Vdc) Collector – Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) Base – Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) hFE VCE(sat) — — VBE(sat) — — –0.85 –1.0 –0.15 –0.2 Vdc 30 400 — Vdc

SMALL– SIGNAL CHARACTERISTICS
Common–Base Cutoff Frequency (IC = –1.0 mAdc, VCB = 6.0 Vdc) Output Capacitance (VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz) fob Cobo 4.0 — — 20 MHz pF

VEC , EMITTER–COLLECTOR VOLTAGE (mV) VCE , COLLECTOR–EMITTER VOLTAGE (mV)

NORMAL MODE INVERTED MODE TJ = 25°C

VBC, BASE–COLLECTOR VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS)

–100

–0.9 NORMAL MODE INVERTED MODE –0.82 VBE(sat) @ IC/IB = 2 VBC(sat) @ IE/IB = 2 TJ = 25°C

–80

–60 VCE(sat) @ IC/IB = 10

–0.74

–40 IC/IB = 2.0 VEC(sat) @ IE/IB = 2.0

–0.66

VBE(on) @ VCE = –1.0 V

–20

–0.58

0 –1.0

–2.0 –3.0

–5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)

–50 –70 –100

–0.50 –1.0

–2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)

–50 –70 –100

Figure 1. Collector–Emitter Voltage

Figure 2. Base “On” Voltage

2–526

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS404A
NORMAL MODE
200 10 7.0 hFE , DC CURRENT GAIN 5.0 TJ = 125°C –55°C 25°C

INVERTED MODE

hFE , DC CURRENT GAIN

100 80 60 40 30 20

25°C

–55°C

3.0 2.0 1.5

10 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

1.0 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

IC, COLLECTOR CURRENT (mA)

IE, EMITTER CURRENT (mA)

Figure 3. DC Current Gain @ VCE = –0.15 Vdc
600 400 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 300 200 TJ = 125°C 25°C –55°C 10 7.0 5.0

Figure 4. DC Current Gain @ VEC = –0.15 Vdc

TJ = 125°C 25°C

3.0 2.0

–55°C

100 80 60 40 30 –1.0 –2.0 –3.0

–5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA)

–50 –70 –100

1.0 –1.0

–2.0 –3.0

–5.0 –7.0 –10 –20 –30 IE, EMITTER CURRENT (mA)

–50 –70 –100

Figure 5. DC Current Gain @ VCE = –1.0 Vdc
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VEC , EMITTER–COLLECTOR VOLTAGE (VOLTS)

Figure 6. DC Current Gain @ VEC = –1.0 Vdc

–0.5 TJ = 25°C –0.4 IC = –2.0 mA –10 mA –50 mA

–0.5

TJ = 25°C

–0.4 IE = –0.5 mA –2.0 mA –10 mA –50 mA

–0.3

–0.3

–0.2

–0.2

–0.1

–0.1

0 –0.005 –0.01 –0.02

–0.05 –0.1 –0.2 –0.5 IB, BASE CURRENT (mA)

–1.0

–2.0

–5.0

0 –0.05 –0.1

–0.2

–0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA)

–10

–20

–50

Figure 7. Collector Saturation Region

Figure 8. Emitter Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–527

MPS404A
100 rec(on), EMITTER–COLLECTOR “ON” RESISTANCE (OHMS) 70 50 30 20 20
NOTE: The dynamic resistance between the emitter and NOTE: collector is measured with the device operated in NOTE: the Inverted Mode.

TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 Cib 3.0 Cob

Ie = 100 µA RMS f = 1.0 kHz TJ = 25°C IE = 0

10 7.0 5.0 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 2.0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0

–5.0

–10

–20

–50

IB, BASE CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Emitter–Collector “On” Resistance

Figure 10. Capacitance

2.0 k 1.0 k 700 500 t, TIME (ns) 300 200 100 70 50 30 20 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 tr VCC = –10 V IC/IB = 0 TJ = 25°C t, TIME (ns)

1.0 k 700 ts 500 VCC = –10 V IC/IB = 0 IB1 = IB2 TJ = 25°C

300 200

tf

td @ VBE(off) = –1.4 V 100 –1.0

–2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA)

–50 –70 –100

Figure 11. Turn–On Time

Figure 12. Turn–Off Time

VBB RBB 1.0 k 0.1 µF Vin 51 RB 10 k

VCC = –10 V RC (560 Ω) C1 (0–250 pF) INPUT Vin RB* (5.6 kΩ) OUTPUT

1.0 k TO SCOPE

VCC (–6.0 V)

Vin (Volts) ton, td and tr toff, ts and tf –12 +20.6

VBB (Volts) +1.4 –11.6

Voltages and resistor values shown are for IC = 10 mA. IC/IB = 10 and IB1 = IB2. Resistor values changed to obtain curves in Figures 11 and 12.

MEASUREMENT PROCEDURE C1 is increased until the toff time of the output waveform is decreased to 0.2 µs, QS is then calculated by QS = C1 Vin. QS3 or QS7 by B–Line Electronics or equivalent may also be used.

VOLTAGE WAVEFORMS 0 6.0 V Vout 6.0 V >5.0 µs Vin tr, tf < 15 ns 10% toff

Figure 13. Switching Time Test Circuit

Figure 14. Stored Base Charge Test Circuit

2–528

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3

NPN MPS650 MPS651 * PNP MPS750 MPS751 *
Voltage and current are negative for PNP transistors
*Motorola Preferred Devices

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 – 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C
1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter – Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. MPS650, MPS750 MPS651, MPS751 IEBO V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 V(BR)EBO ICBO — — — 0.1 0.1 0.1 µAdc 60 80 5.0 — — — Vdc µAdc 40 60 — — Vdc Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–529

NPN MPS650 MPS651 PNP MPS750 MPS751
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector – Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) hFE 75 75 75 40 VCE(sat) — — VBE(on) VBE(sat) — — 0.5 0.3 1.0 1.2 Vdc Vdc — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 75 — MHz

NPN
300 270 240 hFE, DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) – 55°C 25°C TJ = 125°C VCE = 2.0 V hFE, DC CURRENT GAIN 250 225 200 175 150 125 100 75 50 25 0 –10 – 20 – 55°C 25°C TJ = 125°C

PNP
VCE = –2.0 V

– 50 –10 – 200 – 500 –1.0 A –2.0 A –4.0 A 0 IC, COLLECTOR CURRENT (mA)

Figure 1. MPS650, MPS651 Typical DC Current Gain NPN
2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) –2.0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 –50

Figure 2. MPS750, MPS751 Typical DC Current Gain PNP

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10 –10 –20 –50 –1.0 A 0 IC, COLLECTOR 0 0 CURRENT (mA) –2.0 A –4.0 A

Figure 3. MPS650, MPS651 On Voltages

Figure 4. MPS750, MPS751 On Voltages

2–530

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN MPS650 MPS651 PNP MPS750 MPS751
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

NPN
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25°C

PNP
–1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 IC = –10 mA IC = –100 mA –50 –100 –200 –500 IC = –500 mA IC = –2.0 A TJ = 25°C

0 –0.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 5 IB, BASE CURRENT (mA)

Figure 5. MPS650, MPS651 Collector Saturation Region NPN
10 4.0 IC, COLLECTOR CURRENT 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 TA = 25°C 1.0 ms MPS65 0 MPS65 1 TC = 25°C 100 µs –10 –4.0 –2.0 –1.0 –0.5 –0.2 –0.1 –0.05 –0.02 100 –0.01 –1.0

Figure 6. MPS750, MPS751 Collector Saturation Region PNP

100 µs 1.0 ms MPS75 0 MPS75 1

TA = 25°C

TC = 25°C

WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –5.0 –10 –20 –50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) –100

Figure 7. MPS650, MPS651 SOA, Safe Operating Area

Figure 8. MPS750, MPS751 SOA, Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–531

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS918* MPS3563
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS918 15 30 3.0 50 350 2.8 0.85 6.8 – 55 to +150 MPS3563 12 30 2.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 357 147 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO MPS918 MPS3563 V(BR)CBO MPS918 MPS3563 V(BR)EBO MPS918 MPS3563 ICBO MPS918 MPS3563 — — 10 50 3.0 2.0 — — nAdc 30 30 — — Vdc 15 12 — — Vdc Vdc

1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 1.0%.

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

2–532

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS918 MPS3563
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(2) (IC = 3.0 mAdc, VCE = 1.0 Vdc) (IC = 8.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE MPS918 MPS3563 VCE(sat) MPS918 VBE(sat) MPS918 — 1.0 Vdc 20 20 — — 200 0.4 Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kΩ, f = 60 MHz) fT MPS918 MPS3563 Cobo MPS918 MPS918 MPS3563 Cibo MPS918 hfe MPS3563 NF MPS918 — 6.0 dB 20 250 — — — — — 3.0 1.7 1.7 2.0 pF 600 600 — 1500 pF MHz

FUNCTIONAL TEST
Common–Emitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) (Gfd + Gre –20 dB) Gpe MPS918 MPS3563 Pout MPS918 η MPS918 25 — % 15 14 30 — — — mW dB

t

Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Oscillator Collector Efficiency (IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) 2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 1.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–533

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS2222 MPS2222A*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS2222 30 60 5.0 600 625 5.0 1.5 12 – 55 to +150 MPS2222A 40 75 6.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)
1 2 3

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 50 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222 MPS2222A MPS2222 MPS2222A MPS2222 MPS2222A MPS2222A ICBO MPS2222 MPS2222A MPS2222 MPS2222A IEBO MPS2222A IBL MPS2222A — 20 nAdc — — — — — 0.01 0.01 10 10 100 nAdc µAdc V(BR)CEO V(BR)CBO V(BR)EBO ICEX 30 40 60 75 5.0 6.0 — — — — — — — 10 Vdc Vdc Vdc nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

2–534

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS2222 MPS2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MPS2222 MPS2222A MPS2222 MPS2222A VBE(sat) MPS2222 MPS2222A MPS2222 MPS2222A — 0.6 — — 1.3 1.2 2.6 2.0 — — — — 0.4 0.3 1.6 1.0 Vdc — — — — 300 — — — Vdc —

MPS2222A only

MPS2222 MPS2222A

(IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MPS2222 MPS2222A hie MPS2222A MPS2222A hre MPS2222A MPS2222A hfe MPS2222A MPS2222A hoe MPS2222A MPS2222A rb′Cc MPS2222A NF MPS2222A — 4.0 dB 5.0 25 — 35 200 150 ps 50 75 300 375 — — 8.0 4.0 — 2.0 0.25 8.0 1.25 X 10– 4 fT MPS2222 MPS2222A Cobo Cibo — — 30 25 kΩ 250 300 — — — 8.0 pF pF MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time

MPS2222A only
td tr ts tf — — — — 10 25 225 60 ns ns ns ns

( CC = 30 Vdc, VBE(off) = –0.5 Vdc, (V IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) ( CC = 30 Vdc, IC = 150 mAdc, (V IB1 = IB2 = 15 mAdc) (Figure 2)

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

v

v

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–535

MPS2222 MPS2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 –2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% + 30 V 200

–4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

1000 700 500 hFE , DC CURRENT GAIN 300 200

TJ = 125°C

25°C 100 70 50 30 20 10 0.1 –55°C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k

Figure 3. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 TJ = 25°C 0.8

0.6

IC = 1.0 mA

10 mA

150 mA

500 mA

0.4

0.2

0 0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3 0.5 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

10

20

30

50

Figure 4. Collector Saturation Region

2–536

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS2222 MPS2222A
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

Figure 5. Turn – On Time

Figure 6. Turn – Off Time

10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE

10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA 100 µA 500 µA 1.0 mA

6.0

6.0

4.0

4.0

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50 100

0 50

100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 8. Source Resistance Effects

30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1

500 VCE = 20 V TJ = 25°C

300 200

100 70 50 1.0

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)

20 30

50

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 9. Capacitances

Figure 10. Current–Gain Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–537

MPS2222 MPS2222A
1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5

0.2

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

2–538

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS2369 MPS2369A*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Value 15 40 40 4.5 200 625 5.0 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPS2369A V(BR)CES MPS2369,A V(BR)CBO MPS2369,A V(BR)EBO MPS2369,A ICBO MPS2369,A ICES MPS2369,A — — — — — — 0.4 30 0.4 µAdc µAdc 4.5 — — Vdc 40 — — Vdc 40 — — Vdc 15 — — Vdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–539

MPS2369 MPS2369A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A VCE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A VBE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A 0.7 0.5 — — — — — — — — 0.85 — 1.02 1.15 1.60 — — — — — — — — — — 0.25 0.20 0.30 0.25 0.50 Vdc — 20 40 40 20 30 20 20 — — — — — — — — 120 — 120 — — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo MPS2369,A hfe MPS2369,A 5.0 — — — — — 4.0 pF

SWITCHING CHARACTERISTICS
Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) 1. Pulse Test: Pulse Width ts MPS2369,A ton MPS2369,A toff MPS2369,A — 10 18 ns — 8.0 12 ns — 5.0 13 ns

v 300 ms, Duty Cycle v 2.0%.

2–540

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS2369 MPS2369A
+10.6 V 0 –1.5 V t1 3.0 V 270

< 1.0 ns

3.3 k

CS* < 4.0 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%

Figure 1. ton Circuit

+10.75 V 0 –4.15 V

t1

3.0 V 270 < 1.0 ns

3.3 k

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%

CS* < 4.0 pF

Figure 2. toff Circuit

+6.0 V 0 –4.0 V

t1

10 V 980

< 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%

500

CS* < 3.0 pF

Figure 3. Storage Test Circuit

* Total shunt capacitance of test jig and connectors.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–541

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS2907 MPS2907A*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg – 500 to +150 Watts mW/°C °C mW mW/°C MPS2907 –40 –60 –5.0 –600 MPS2907A –60 Unit Vdc Vdc Vdc mAdc

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. Pulse Test: Pulse Width MPS2907 MPS2907A MPS2907 MPS2907A IB MPS2907 MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO — — — — — –0.02 –0.01 –20 –10 –50 nAdc –40 –60 –60 –5.0 — — — — — –50 Vdc Vdc Vdc nAdc µAdc

v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data

Preferred devices are Motorola recommended choices for future use and best overall value.

2–542

MPS2907 MPS2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –500 mAdc, VCE = –10 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907, MPS2907A MPS2907 MPS2907A VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc 35 75 50 100 75 100 100 30 50 — — — — — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1), (2) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — — 8.0 30 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 Vdc, IC = –150 mAdc, Ad ) (Fi IB1 = IB2 = 15 mAdc) (Figure 2) (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 15 mAdc) Ad ) (Figures (Fi 1 and d 5) ton td tr toff ts tf — — — — — — 45 10 40 100 80 30 ns ns ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

v

v

INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –16 V 200 ns 50 1.0 k

–30 V 200

INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –30 V 200 ns

+15 V

–6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

1.0 k 1.0 k 50

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

1N916

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–543

MPS2907 MPS2907A
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C

–0.2 –0.3

–0.5 –0.7 –1.0

–2.0

–3.0

–5.0 –7.0

–10

–20

–30

–50 –70 –100

–200 –300

–500

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0

–0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA

–0.4

–0.2

0 –0.005

–0.01

–0.02 –0.03 –0.05 –0.07 –0.1

–0.2

–0.3 –0.5 –0.7 –1.0 IB, BASE CURRENT (mA)

–2.0

–3.0

–5.0 –7.0 –10

–20 –30

–50

Figure 4. Collector Saturation Region

300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT tr

500 VCC = –30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

–20 –30 –50 –70 –100 –200 –300 –500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Turn–Off Time

2–544

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS2907 MPS2907A
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0

6.0

6.0

4.0

4.0

IC = –50 µA –100 µA –500 µA –1.0 mA

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50

100

0

50

100

200

500 1.0 k 2.0 k

5.0 k 10 k

20 k

50 k

f, FREQUENCY (kHz)

Rs, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 8. Source Resistance Effects

30 20 C, CAPACITANCE (pF) Ceb

400 300 200

10 7.0 5.0 3.0 2.0 –0.1 Ccb

100 80 60 40 30 20 –1.0 –2.0

VCE = –20 V TJ = 25°C

–0.2 –0.3 –0.5

–1.0

–2.0 –3.0 –5.0

–10

–20 –30

–5.0

–10

–20

–50

–100 –200

–500 –1000

REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances

Figure 10. Current–Gain — Bandwidth Product

–1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) VBE(on) @ VCE = –10 V

+0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE

–0.6

–0.4

–0.2

0 –0.1 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20

–50 –100 –200

–500

–5.0 –10 –20

–50 –100 –200 –500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–545

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS3638A

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value –25 –25 –25 –4.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –15 Vdc, VBE = 0) (VCE = –15 Vdc, VBE = 0, TA = –65°C) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) Base Current (VCE = –15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IEBO IB — — –0.035 –2.0 –35 –0.035 nA –25 –25 –25 –4.0 — — — — Vdc Vdc Vdc Vdc

mAdc

mAdc

v

v

(Replaces MPS3638/D)

2–546

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3638A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(2)
DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –300 mAdc, VCE = –2.0 Vdc) Collector – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) Base – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) hFE 80 100 100 20 VCE(sat) — — VBE(sat) — –0.80 –1.1 –2.0 –0.25 –1.0 Vdc — — — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) fT 150 Cobo — Cibo — hie — hre — hfe 100 hoe — 1.2 — mmhos 15 — 2000 X 10– 4 25 kΩ 10 pF — pF MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn–On Time Turn–Off Time (VCC = –10 Vdc Vdc, IC = –300 mAdc mAdc, IB1 = –30 mAdc) ( CC = –10 Vdc, IC = –300 mAdc, (V IB1 = –30 mAdc, IB2 = –30 mAdc) (IC = –300 mAdc, IB1 = –30 mAdc) (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) td tr ts tf ton toff — — — — — — 20 70 140 70 75 170 ns ns ns ns ns ns

2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–547

MPS3638A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V < 2 ns +2 V 0 – 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 –16 V < 20 ns 1.0 kΩ 1.0 to 100 µs, DUTY CYCLE = 2% – 30 V 200 Ω

CS* < 10 pF

+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

TRANSIENT CHARACTERISTICS
25°C 30 20 CAPACITANCE (pF) 100°C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 10 20 10 7.0 5.0 Ccb

VCC = 30 V IC/IB = 10

QT QA

0.2 0.3

2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS)

20

30

200 30 50 70 100 IC, COLLECTOR CURRENT (mA)

300

500

Figure 3. Capacitances

Figure 4. Charge Data

2–548

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25°C 100°C

100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10

100 70 50 30 20 VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

Figure 6. Rise Time

200 IC/IB = 10 t s′, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 IC/IB = 20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–549

MPS3638A
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ NF, NOISE FIGURE (dB) 8

6

6

4

4

IC = 50 µA 100 µA 500 µA 1.0 mA

2

RS = OPTIMUM SOURCE RESISTANCE

2

0 0.01 0.02 0.05 0.1 0.2

0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

Figure 9. Source Resistance Effects

h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from the 2N4402 line, and the same units were This group of graphs illustrates the relationship between used to develop the correspondingly–numbered curves on hfe and other “h” parameters for this series of transistors. To each graph. obtain these curves, a high–gain and a low–gain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2

100 70 50

2N4402 UNIT 1 2N4402 UNIT 2

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500

Figure 11. Input Impedance

100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio 2–550

Figure 13. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3638A
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 14. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 0.8

0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA

0.2

0 0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region

1.0 0.8 VOLTAGE (VOLTS)

TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C)

0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE(sat) @ VCE = 10 V

0.4

0.2

qVS for VBE
0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

Figure 16. “On” Voltages

Figure 17. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–551

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS3640

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –12 –12 –4.0 –80 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –6.0 Vdc, VBE = 0, TA = 65°C) Base Current (VCE = –6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IB — –0.01 –1.0 –10 nAdc –12 –12 –12 –4.0 — — — — Vdc Vdc Vdc Vdc µAdc

v 300 ms, Duty Cycle v 2.0%.

2–552

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3640
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = –10 mAdc, VCE = –0.3 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE 30 20 VCE(sat) — — — VBE(sat) –0.75 –0.75 — –0.95 –1.0 –1.5 –0.2 –0.6 –0.25 Vdc 120 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 — — — 3.5 3.5 MHz pF pF

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn–On Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc) Turn–Off Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc) 1. Pulse Test: Pulse Width (VCC = –6.0 Vdc, IC = –50 mAdc, VBE(off) = –1.9 Vdc, IB1 = –5.0 5 0 mAdc) Ad ) (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) td tr ts tf ton — — toff — — 35 75 25 60 ns — — — — 10 30 20 12 ns ns ns ns ns

v 300 ms, Duty Cycle v 2.0%.

VBB = +1.9 V VCC = –6.0 V 1.0 k 0 0.1 µF 680 110 Vout 5.0 V

VBB = –6.0 V 5.0 k 0.1 µF 5.0 k

VCC = 1.5 V 130 Vout

Vin –6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 5.0 mA.

Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 0.5 mA.

Figure 1.

Figure 2.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–553

MPS3640
200 VCE = –1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 –0.2 10 –0.1 –0.2 –5.0 –10 –20 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mA) –50 –100 0 –0.1 –0.2 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 TJ = 125°C V, VOLTAGE (VOLTS) 25°C –55°C –1.4 –1.2 –1.0 –0.8 VBE(on) @ VCE = –1.0 V –0.6 –0.4 TJ = 25°C VBE(sat) @ IC/IB = 10

Figure 3. DC Current Gain

Figure 4. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 TJ = 25°C –0.8 IC = –1.0 mA –0.6 –5.0 mA –20 mA –80 mA θV, TEMPERATURE COEFFICIENT (mV/ °C)

+0.5

*APPLIES FOR IC/IB ≤ hFE/4 RθVC for VCE(sat)

25°C to 125°C –55°C to 25°C

0

–0.5

–0.4

–1.0 25°C to 125°C RθVB for VBE –2.0 –0.1 –0.2 –55°C to 25°C –50 –100

–0.2

–1.5

0 –0.01 –0.02

–0.05 –0.1 –0.2 –0.5 –1.0 IB, BASE CURRENT (mA)

–2.0

–5.0

–10

–0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

Figure 5. Collector Saturation Region
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 6. Temperature Coefficients

2000 TJ = 25°C f = 100 MHz 1000 800 600 400 –1.0 V VCE = –10 V C, CAPACITANCE (pF)

5.0 TJ = 25°C 3.0 2.0 Cobo Cibo 1.0 0.7

200 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20 –30

–50 –70 –100

0.5 –0.2 –0.3

–0.5 –0.7 –1.0

–2.0 –3.0

–5.0 –7.0 –10

–20

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Current–Gain — Bandwidth Product

Figure 8. Capacitance

2–554

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Switching Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS3646
Motorola Preferred Device

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous — 10 ms Pulse Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — 0.5 3.0 40 15 40 5.0 — — — — Vdc Vdc Vdc Vdc

mAdc

v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–555

MPS3646
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) hFE 30 25 15 — — — — 0.73 — — 120 — — 0.2 0.28 0.5 0.3 0.95 1.2 1.7 —

Collector – Emitter Saturation Voltage

VCE(sat)

Vdc

Base – Emitter Saturation Voltage

VBE(sat)

Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 350 — — — 5.0 9.0 MHz pF pF

SWITCHING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Turn–Off Time Fall Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) ( ) (Figure 1) (VCC = 10 Vdc, Vd IC = 300 mAdc, Ad IB1 = 30 mAdc) Ad ) (Figure 1) ton td tr toff tf ts — — — — — — 18 10 15 28 15 18 ns ns ns ns ns ns

Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Figure 1. Switching Time Equivalent Test Circuit
Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS Ω RC CS(max) VBE(off) Ω pF 4 4 12 V –1.5 — –2.0 V1 V — V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns

330 270 0 960 560 560 96

10.55 –4.15 10.70 –4.65 6.55 6.35 –4.65 6.55

V3 0 V2

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

2–556

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3646
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C –15°C – 55°C 20 MPS3646 VCE = 1 V

30

10 1.0

2.0

3.0

5.0

7.0

10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

200 TJ = 125°C h FE, DC CURRENT GAIN 100 70 50 25°C –15°C – 55°C MPS3646 VCE = 1 V

30 20 1.0

2.0

3.0

5.0

7.0

10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

Figure 2. Minimum Current Gain

270 Ω t1 +10 V ∆V 0 PULSE WIDTH (t1) = 5 µs 3V 8 pF CS < 4 pF <1 ns 9.2 kΩ DUTY CYCLE = 2% C COPT TIME C < COPT C=0

Figure 3. QT Test Circuit NOTE 1
When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or “stored” in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector–base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor “on” to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE

Figure 4. Turn–Off Waveform

If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn–off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn–off waveform. Given QT from Figure 13, the external C for worst–case turn–off in any circuit is: C = QT/∆V, where ∆V is defined in Figure 3.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–557

MPS3646
“ON” CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25°C IC = 10 mA 0.6 50 mA 100 mA 200 mA

0.8

0.4

0.2

0

0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 IB, BASE CURRENT (mA)

5.0

7.0

10

20

30

50

1.0 VCE, MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25°C IC = 10 mA 0.6 50 mA 100 mA 200 mA

0.8

0.4

0.2

0

0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 IB, BASE CURRENT (mA)

5.0

7.0

10

20

30

50

Figure 5. Collector Saturation Region

Vsat , SATURATION VOLTAGE (VOLTS)

1.0 0.8 0.6 0.4 0.2 0

IC/IB = 10 TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.2 MAX VBE(sat) MIN VBE(sat)

1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 (25°C to 125°C)

qVC for VCE(sat)

(25°C to 125°C) (– 55°C to 25°C)

MAX VCE(sat)

qVB for VBE

(– 55°C to 25°C)

1.0

2.0 3.0

50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

200

0

40

80 120 160 IC, COLLECTOR CURRENT (mA)

200

Figure 6. Saturation Voltage Limits

Figure 7. Temperature Coefficients

2–558

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3646
DYNAMIC CHARACTERISTICS
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25°C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25°C TJ = 125°C

2V

Figure 8. Delay Time

Figure 9. Rise Time

50 TJ = 25°C TJ = 125°C t f , FALL TIME (ns) IC/IB = 10

200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25°C TJ = 125°C

t s , STORAGE TIME (ns)

30 20

IC/IB = 20

10 7.0 5.0 ts′

^ ts – 1/8 tf
IB1 = IB2

Figure 10. Storage Time

Figure 11. Fall Time

10 MAX TYP 7.0 CAPACITANCE (pF) Cibo Q, CHARGE (pC)

1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25°C TJ = 125°C

5.0

3.0

Cobo

2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10

20

Figure 12. Junction Capacitance

Figure 13. Maximum Charge Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–559

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS3904

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 60 6.0 100 625 5.0 450 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW Watts mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

REV 1

2–560

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 40 70 100 60 30 VCE(sat) — — VBE(sat) 0.65 — 0.85 1.1 0.2 0.3 Vdc — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 — — 1.0 0.5 100 1.0 — — 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF kΩ X 10–4 — µmhos dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( CC = 3.0 Vdc, VBE(off) = – 0.5 Vdc, (V IC = 10 mAdc, IB1 = 1.0 mAdc) ( CC = 3.0 Vdc, IC = 10 mAdc, (V IB1 = IB2 = 1.0 mAdc) td tr ts tf — — — — 35 50 900 90 ns ns ns ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275

10 < t1 < 500 µs DUTY CYCLE = 2%

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–561

MPS3904
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞

10 7.0 5.0 10 µA 3.0

100 µA

30 µA

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is defined as: NF

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k

4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

+ 20 log10

ǒ

en2

) 4KTRS ) In 2RS2 1ń2

Ǔ

IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband 2–562 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3904
TYPICAL STATIC CHARACTERISTICS
400 TJ = 125°C

h FE, DC CURRENT GAIN

200

25°C

– 55°C 100 80 60 40 0.004 0.006 0.01 MPS3904 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 IC, COLLECTOR CURRENT (mA) MPS3904 TJ = 25°C

100

0.8 IC = 1.0 mA 10 mA 50 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0%

IB = 500 µA 400 µA 300 µA

0.6

100 mA

60 200 µA 40 100 µA 20

0.4

0.2

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 9. Collector Saturation Region

Figure 10. Collector Characteristics

TJ = 25°C

1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4

1.6 0.8

*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C

0

– 0.8 25°C to 125°C – 1.6

qVB for VBE
– 2.4 0.1 0.2

– 55°C to 25°C 50 100

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–563

MPS3904
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts

t, TIME (ns)

VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100

20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)

50 70

100

Figure 13. Turn–On Time
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

Figure 14. Turn–Off Time

500 TJ = 25°C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25°C f = 1.0 MHz

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product

Figure 16. Capacitance

20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe ≈ 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS3904 hfe ≈ 200 @ IC = 1.0 mA

Figure 17. Input Impedance

Figure 18. Output Admittance

2–564

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3904
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 19. Thermal Response

104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 – 40 – 20 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19A.

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C dc TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

100 µs 10 µs 1.0 s

dc

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

Figure 20.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–565

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS3906

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –40 –40 –5.0 –200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –3.0 Vdc) Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –3.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL –40 –40 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc

REV 1

2–566

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) — — VBE(sat) –0.65 — –0.85 –0.95 –0.25 –0.4 Vdc — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 V, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 — — 2.0 1.0 100 3.0 — — 4.5 10 12 10 400 60 4.0 MHz pF pF kΩ X 10– 4 —

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = –3.0 Vdc, VBE(off) = + 0.5 Vdc, ( IC = –10 mAdc, IB1 = 1.0 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 1 0 mAdc) Ad ) td tr ts tf — — — — 35 50 600 90 ns ns ns ns

1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–567

MPS3906
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA

BANDWIDTH = 1.0 Hz RS ≈ ∞

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

BANDWIDTH = 1.0 Hz

0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

RS , SOURCE RESISTANCE (OHMS)

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100

10 Hz to 15.7 kHz

Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)

+ 20 log10

ƪ

en2

) 4KTRS ) In 2RS2 1ń2
4KTRS

ƫ

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Figure 5. Wideband 2–568 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3906
TYPICAL STATIC CHARACTERISTICS
400

TJ = 125°C 25°C

h FE, DC CURRENT GAIN

200

– 55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100

Figure 6. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

TA = 25°C IC, COLLECTOR CURRENT (mA)

100

0.8 IC = 1.0 mA 10 mA 50 mA 100 mA

TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60

IB = 400 µA 350 µA 250 µA 200 µA 150 µA

0.6

0.4

40

100 µA 50 µA

0.2

20

0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

TJ = 25°C

θV, TEMPERATURE COEFFICIENTS (mV/°C)

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8

1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C

VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100

0.8 25°C to 125°C 1.6

qVB for VBE
0.2

– 55°C to 25°C

2.4 0.1

0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–569

MPS3906
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts

VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C

t, TIME (ns)

tf

2.0

3.0

20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

50 70

100

– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA)

– 50 – 70 –100

Figure 11. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 12. Turn–Off Time

500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)

10 TJ = 25°C 7.0 Cib 5.0

3.0 2.0 Cob

100 70 50 0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

1.0 0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Current–Gain — Bandwidth Product

Figure 14. Capacitance

20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3906 hfe ≈ 200 @ IC = –1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = –10 Vdc f = 1.0 kHz TA = 25°C

200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS3906 hfe ≈ 200 @ IC = 1.0 mA

Figure 15. Input Impedance

Figure 16. Output Admittance

2–570

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS3906
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5

0.2

0.01 0.01 0.02

0.05

0.1

0.2

0.5

1.0

500 1.0 k 2.0 k

Figure 17. Thermal Response

400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25°C TA = 25°C dc TJ = 150°C

1.0 ms 100 µs dc

10 µs

1.0 s

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40

Figure 18. Active–Region Safe Operating Area

104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO

DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569.

ICBO AND ICEX @ VBE(off) = 3.0 V

–4 0

–2 0

0

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C)

Figure 19. Typical Collector Leakage Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–571

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS4124

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 25 30 5.0 200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter – Base Breakdown Voltage (IC = 0, IE = 10 mA) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 30 V(BR)EBO 5.0 ICBO — IEBO — 50 50 nAdc — nAdc — Vdc — Vdc Vdc

(Replaces MPS4123/D)

2–572

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector – Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE 120 60 VCE(sat) — VBE(sat) — 0.95 0.3 Vdc 360 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) fT 170 Cob — Cib — hfe 120 NF — 5.0 480 dB 13.5 — 4.0 pF — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–573

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS4126

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value –25 –25 –4.0 –200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) Emitter – Base Breakdown Voltage (IC = 0, IE = –10 mA) Collector Cutoff Current (VCB = –20 V, IE = 0) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) V(BR)CEO –25 V(BR)CBO –25 V(BR)EBO –4.0 ICBO — IEBO — –50 –50 nAdc — nAdc — Vdc — Vdc Vdc

(Replaces MPS4125/D)

2–574

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS4126
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mA, VCE = –1.0 V) (IC = –50 mA, VCE = –1.0 V) Collector – Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) Base – Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) hFE 120 60 VCE(sat) — VBE(sat) — –0.95 –0.4 Vdc 360 — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –20 V, f = 100 MHz) Output Capacitance (VCB = –5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = –100 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) fT 170 Cob — Cib — hfe 120 NF — 4.0 480 dB 11.5 — 4.5 pF — pF MHz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–575

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS4250

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value –40 –40 –40 –5.0 — 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –5.0 mA) Collector – Emitter Sustaining Voltage(1) (IC = –5.0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –10 mA) Collector Cutoff Current (VCB = –50 V) (VCB = –40 V, TA = 65°C) Emitter Cutoff Current (VEB = –3.0 V) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CES V(BR)CEO(sus) V(BR)CBO V(BR)EBO ICBO — — IEBO — –10 –3.0 –20 nA mA nA –40 –40 –40 –5.0 — — — — Vdc Vdc Vdc Vdc

2–576

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS4250
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = –1.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage(1) (IC = –10 mA, IB = –0.5 mA) Base – Emitter Saturation Voltage(1) (IC = –10 mA, IB = –0.5 mA) hFE 250 250 VCE(sat) VBE(sat) — — — — –0.25 –0.9 Vdc Vdc —

SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = –5.0 V, f = 1.0 MHz) Input Capacitance (VEB = –0.5 V, f = 1.0 MHz) Small–Signal Current Gain (IC = –1.0 mA, VCE = –5.0 V, f = 1.0 kHz) (IC = –0.5 mA, VCE = –5.0 V, f = 20 MHz) Noise Figure (IC = –20 mA, VCE = –5.0 V, RS = 10 kΩ, f = 1.0 kHz, PBW = 150 Hz) (IC = –250 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz, PBW = 150 Hz) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. Cobo Cibo hfe 250 2.0 NF — — 2.0 2.0 800 — dB — — 6.0 16 pF pF —

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–577

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Frequency Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

MPS5179
Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C

1 2 3

CASE 29–04, STYLE 1 TO–92 (TO–226AA)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) VCEO(sus) V(BR)CBO V(BR)EBO ICBO — — 0.02 1.0 12 20 2.5 — — — Vdc Vdc Vdc µAdc

ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 25 — — 250 0.4 1.0 — Vdc Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.

2–578

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS5179
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Small Si