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Practice Question Design the circuit so that the transistor operate at ID = 0.4mA and VD = +0.5V. The NMOS transistor has Vt = 0.7V, µnCox = 100µA/V2, L=1µm, and W = 32µm. Neglect the channel length modulation effect (i.e. assume that λ = 0)
W/L = 120µm.4V .3mA. Vt = 1V. and VD = 0.5V.EEET 333 Nasir Ayub Redesign the circuit for the following case: VDD = -VSS = 2. ID = 0. µnCox = 60µA/V2.