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M
=
Semi
where
M
is the metal work function
and
Semi
is the semiconductor work function.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
13
(1) V
G
= 0 (Equilibrium)
(E
F
= constant throughout structure)
In this illustration you can consider the source to be above the page
and the drain to be below the page. The metal is the gate.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
14
(2) V
G
> 0 (Accumulation)
The gate bias is negative.
This means that E
F
at the gate goes up.
M and S have much higher conductivity than O.
Voltage between gate and channel drops mostly across the oxide
An electric field is generated in oxide.
Electrostatic boundary condition of O-S interface:
D
ox
= D
S
or
ox
E
ox
=
S
D
S
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
15
Band diagram:
Fermi levels are different in M and S.
Fermi levels are constant within M and within S.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
16
Recall that
( ) kT E E
F i
e n x p
=
i
) (
(1)
p(x) increases near the surface Accumulation (i. e. we have an
accumulation of holes near the surface)
Definition of surface potential =
S
Surface potential energy = e
S
= difference of bulk value of E
i
and
surface value of E
i
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
17
When bands bend upwards:
0
S
surface
i
bulk
i
< = e E E
(2)
When bands bend downwards:
0
S
surface
i
bulk
i
> = e E E
(3)
Under flatband conditions:
0
S
=
(4)
Introducing dependence of the potential on the position x:
) ( ) (
i
bulk
i
x E E x e =
(5)
) 0 (
S
= = x
(6)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
18
Using Eqs. (1) and (5), one obtains
( ) kT E E
n x p
F i
e ) (
i
=
kT E x e E
n
] ) ( [
i
F
bulk
i
e
=
kT x e kT E E
n
) ( ) (
i
e e
F
bulk
i
=
kT x e
p x p
) (
0
e ) (
=
(7)
Since (x) < 0, p(x) increases close to the surface.
That is, we have accumulation.
That is the result of Eq. (7) is consistent with band diagram.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
19
(3) V
G
> 0 (Depletion)
The gate bias is positive.
E
F
goes down in the metal.
Band diagram:
Semiconductor is depleted near surface.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
20
The depletion layer thickness follows from Poissons equation:
S
A
D
2
=
N e
W
(8)
E
F
is near E
i
at the surface.
Semiconductor is practically intrinsic at the surface.
Recall Eq. (7):
kT x e
p x p
) (
0
e ) (
=
It is (x) > 0 p < p
0
, that is, we have a depleted layer near the
surface.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
21
(4) V
G
>> 0. (Onset of strong inversion)
The gate bias is position.
E
F
goes further down in metal.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
22
Semiconductor is depleted of holes near surface.
E
F
is closer to E
C
than to E
V
at the surface.
Semiconductor is n-type near surface
Conductivity type of semiconductor is inverted.
Criterion for the onset of strong inversion:
F S
2 = e e
(Onset of strong inversion) (9)
where
bulk
F
bulk
i F
E E e =
(10)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
23
Onset of strong inversion means that the semiconductor is as
strongly n-type at the surface as it is p-type in the bulk.
Using Boltzmann statistics
kT E E
n p
) (
i
F i
e
=
(11)
and Eqs. (9) and (10), one obtains
i
A
F S
ln 2 2
n
N
kT e e = =
(Onset of strong inversion) (12)
At the onset of strong inversion, an n-channel begins to be formed at
the semiconductor surface.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
24
The depletion layer thickness at the onset of strong inversion is given
by:
i
A
A
F
A
max D,
ln 2
2
2
2
n
N
e
kT
eN eN
W
=
=
i
A
A
2
max D,
ln 2
n
N
N e
kT
W
=
(13)
W
D, max
is the maximum depletion layer thickness.
A further increase in V
G
will result in more inversion rather than in
more depletion.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
25
(5) Lets go beyond the onset of strong inversion.
Strong Inversion
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
26
Beyond the onset of strong inversion, electrons are filled into the
electron channel. The depletion layer thickness does not increase
further, i. e. W
D
= W
D, max
.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
27
Example:
Find W
D, max
for ideal Si MOS capacitors, one of them having a
background doping of N
A
= 10
16
cm
3
and one of them having a
background doping of N
A
= 10
18
cm
3
.
Solution: It is
300 m 03 . 0 cm 10
2700 m 27 . 0 cm 10
ln 2
9 , cm 10
max D,
3 18
A
max D,
3 16
A
i
A
A
2
max D,
r
3 10
i
= = =
= = =
=
= =
W N
W N
n
N
N e
kT
W
n
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
28
Band diagram, charge, field, and potential of ideal MOS
capacitor
(see next page)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
29
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
30
We use the depletion approximation for the acceptor charge in the
semiconductor:
D A
3D
D
0 for W x N e Q =
(14)
D
3D
D
for 0 W x Q > =
(15)
where Q
3D
is the charge per unit volume. Analogously, we will denote
a charge per unit area as Q
2D
.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
31
Threshold voltage of ideal MOS capacitor
The overall charge of a MOS device (or any other device) is zero.
Charge neutrality thus requires:
( )
2D
n
2D
D
2D
S
2D
M
Q Q Q Q + = =
(16)
where Q
M
2D
= metal charge, Q
S
2D
= semiconductor charge, Q
D
2D
=
depletion charge, and Q
n
2D
= electron charge.
area unit per Charge
2D
= Q
(17)
D A
2D
D
W eN Q =
(18)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
32
Voltage across MOS capacitor
S OX
+ = V V
(19)
where
2D
OX
2D
S
OX OX
2D
S
OX OX
) (
C Q
d Q
d V
=
=
= E
(20)
OX OX
2D
S
2D
OX
2D
S
OX
d
Q
C
Q
V
= =
(21)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
33
Note that
A C C
2D
OX OX
=
(22)
where
Area
area unit per e Capacitanc
e Capacitanc
2D
OX
OX
=
=
=
A
C
C
At threshold, an electron channel is induced at the O-S interface. This
happens at the onset of strong inversion.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
34
Onset of strong inversion:
0
2D
n
Q
(23)
2D
D max D, A
2D
S
Q W N e Q = =
(24)
F S
2 =
(25)
Insertion of Eqs. (23) (25) into Eqs. (19) and (21) yields
F
2D
OX
max D, A
F
2D
OX
2D
D
th
2 2 + = + =
C
W N e
C
Q
V
(26)
Thus the threshold voltage is the sum of a voltage drop in the oxide and
in the semiconductor at the onset of strong inversion. Eq. (26) applies to
the ideal MOS structure.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
35
Capacitance of ideal MOS capacitor
Capacitance of oxide capacitor:
OX
OX
2D
OX
d
C
=
(27)
Capacitance of depletion layer:
D
S
2D
D
W
C
=
(28)
We have two capacitors in series. Thus, the total capacitance is given
by:
1
2D
D
2D
OX
2D
MOS
1 1
+ =
C C
C
(29)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
36
1
S
D
OX
OX
2D
MOS
=
W d
C
(30)
The following illustration shows the C
MOS
2D
- vs. - V curve. Note that W
D
depends on V.
1
S
max D,
OX
OX
2D
min MOS,
=
W
d
C
(31)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
37
Discussion of C
MOS
2D
- vs. - V curve
V
G
> 0 Accumulation
Holes accumulate at the O-S interface
OX OX
2D
MOS
d C =
V
G
> 0 Depletion
Depletion layer thickness increases with V
V = V
th
Onset of strong inversion
1
S
max D,
OX
OX
2D
min MOS,
max D, D
=
=
W
d
C
W W
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
38
V > V
th
(1) Low frequency
An inversion channel is formed at the O-S interface.
OX OX
2D
MOS
d C =
(2) High frequency
Electron-hole pairs are generated too slowly to follow the ac
signal of the measurement.
2D
min MOS,
2D
MOS
C C =
Note: Using short pulsed measurements, a state called deep depletion
can be created. In the deep depletion mode, the depletion layer can be
extended over what was referred to as W
D, max
. The pulses need to be
very short, to prevent the formation of an inversion channel.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
39
Real MOS capacitor
Generally, there is a work function difference between metal and
semiconductor. That is
S M
Work function difference
S M MS
=
(32)
There are usually charges trapped in the oxide, for example Na
+
(sodium) ions. The oxide charges produce a voltage:
2D
OX
2D
OX
C Q V =
(33)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
40
Band diagram (for
MS
0 and Q
OX
0)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
41
Flatband voltage
Adding Eqs. (32) and (33) yields
OX
OX
MS FB
C
Q
V =
(34)
where Q
OX
is an effective positive charge at the O-S interface.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
42
Threshold voltage
Eq. (26) holds for the ideal MOS structure. In the case of a real MOS
structure, the effects of the work function difference and oxide charges
must be included. The threshold voltage for the real MOS structure is
given by:
F
2D
OX
2D
D
2D
OX
2D
OX
MS th
2 + =
C
Q
C
Q
V
(35)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
43
MOSFET Operation
We will use again Shockley's gradual channel approximation.
Charge density in channel: Q
n
2D
Below threshold: Q
n
2D
= 0
Above threshold: | Q
n
2D
| > 0
Recall charge neutrality condition
2D
D
2D
n
2D
S
2D
M
Q Q Q Q + = =
(36)
2D
D
2D
S
2D
n
Q Q Q =
(37)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
44
Recall Gauss's law
2D
1
d ) (
1
Q x x
x
=
E
(38)
Using Gauss's law in Eq. (37) yields:
OX
th
OX
OX
GS
OX
OX
th
OX OX OX
2D
n
) (
) (
d
V
d
x V V
d
V
x Q
+
=
+ = E
(39)
[ ] ) (
th GS
OX
OX
2D
n
x V V V
d
Q
=
(40)
where V(x) is the channel-to-source voltage.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
45
Illustration of sheet charge
(1) MESFET
Carrier concentration: n(x) (cm
3
)
Sheet carrier concentration: n
2D
(x) = n(x) h(x) (cm
2
)
Sheet charge density: Q
n
2D
= e n(x) h(x) (C / cm
2
)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
46
(2) MOSFET h(x) 0 (Inversion layer)
Thickness of inversion layer h(x) 0
Sheet carrier concentration n
2D
(x) (cm
2
)
Sheet charge density Q
n
2D
= e n
2D
(x) (C / cm
2
)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
47
Gradual channel approximation
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
48
Recall from MESFET: I
D
= e n v(x) h(x) Z
However, in the MOSFET we have:
Z x v x Q I ) ( ) (
2D
n D
=
(41)
[ ] Z x x Q ) ( ) (
n
2D
n
E =
(42)
Z
x
x V
x Q
d
) ( d
) (
n
2D
n
=
(43)
Insertion of Eq. (40) into Eq. (43):
[ ]
x
x V
x V V V Z
d
I
d
) ( d
) (
th GS n
OX
OX
D
=
(44)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
49
Separation of variables and integration yields
( )
=
DS G
0
th GS
OX
OX
0
D
) ( d ) ( d
V L
x V x V V V
d
Z
x I
(45)
( )
=
2
DS DS th GS
G OX
OX
D
2
1
) ( V V V V
L d
Z
I
(46)
current I
D
is negative since it flows in the negative x direction.
However, since the direction is not important to us, the sign is put
in parenthesis.
first term in bracket (minuend) increases linearly with V
DS
.
second term in bracket (subtrahend) increases parabolically with
V
DS
. Second term is negative.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
50
for very small V
DS
, the term () V
DS
2
can be neglected.
Then I
D
depends linearly on V
DS
.
This is the ohmic regime.
At V
DS
= V
GS
V
th
, the slope dI
D
/ dV
DS
= 0.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
51
Onset of saturation:
th GS
sat DS,
V V V =
(47)
Insertion of Eq. (49) into Eq. (46) yields
( )
2
th GS
G OX
OX
2
sat DS,
G OX
OX
sat D,
2 2
1
V V
L d
Z
V
L d
Z
I
=
=
(48)
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
52
Transconductance
( )
th GS
G OX
OX
GS
sat D,
sat m,
d
d
V V
L d
Z
V
I
g
= =
(49)
The equation shows that in order to get a high transconductance, the
following properties are desirable:
(1) High mobility
(2) Thin oxide (in 2002: d
OX
40 ) or dielectric with high
r
(3) Short gate length
Transconductance increases with gate width Z. But increasing Z, also
increases the area of the FET.
E. F. Schubert, Rensselaer Polytechnic Institute, 2003
53
Frequently used figure of merit:
g
m
/ Z = Transconductance per unit gate width.
Questions:
What are the units of g
m
/ Z?
How does g
m
depend on Z?
How does the input capacitance (C
GS
) depend on Z?
What is the relevance of g
m
/ C
GS
?
How does g
m
/ C
GS
depend on Z?