JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-220 Plastic-Encapsulate Transistors

3DD13003
FEATURES

TRANSISTOR ( NPN )

TO-220
1. BASE 2. COLLECTOR 3. EMITTER

power switching applications

MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 700 400 9 1.5 2 -55-150 Units V V V A W

123

ELECTRICAL CHARACTERISTICS (Tamb=25

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1

unless
Test

otherwise

specified)
MIN 700 400 9 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHz s s 40 TYP MAX UNIT V V V A A A

conditions

Ic= 1000uA, IE=0 Ic= 10 mA, IE= 1mA, IB=0 IC=0

VCB= 700V , IE=0 VCE= 400V, VEB= 9 V,

B=0

IC=0

VCE= 5 V, IC= 0.5 A VCE= 5 V, IC= 1.5A IC=1000mA,IB= 250 mA IC=1000mA, IB= 250mA IE= 2000 mA VCE=10V,Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A

VCC=100V

CLASSIFICATION OF
Rank Range 8-10

hFE (1)

10-15

15-20

20-25

25-30

30-35

35-40

Typical Characteristics

3DD13003