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TSOP12..

Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

Description
The TSOP12.. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP12.. is the standard IR remote control receiver series, supporting all major transmission codes. This component has not been qualified according to automotive specifications.

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94 8691

Features
• Photo detector and preamplifier in one package • Internal filter for PCM frequency e3 • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Low power consumption • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Special Features
• Improved immunity against ambient light • Suitable burst length ≥ 10 cycles/burst

Parts Table
Part TSOP1230 TSOP1233 TSOP1236 TSOP1237 TSOP1238 TSOP1240 TSOP1256 Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz

Block Diagram

Application Circuit

16832

16842

2 30 kΩ Input PIN AGC Band Pass Demodulator
VS

3
OUT

Circuit

Transmitter TSOPxxxx with TSALxxxx

R1 = 100 Ω VS C1 = 4.7 µF µC VO GND + VS

OUT GND

1 Control Circuit
GND R1 and C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously a a voltage below VO = 3.3 V by the external circuit.

Document Number 82013 Rev. 1.12, 19-Jan-07

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8 Typ. > 1 mm from case (Pin 2) (Pin 2) (Pin 3) (Pin 3) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value .40 kHz) Minimum Irradiance (56 kHz) VOSL Ee min 0. f = fo. Ev = 0 VS = 5 V.3 to + 6. test signal see fig. test signal see fig.5 Max 1. test signal see fig. sunlight Symbol ISD ISH VS d 4.3 to + 6.5 5.0. 1 Pulse width tolerance: tpi . unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb ≤ 85 °C) t ≤ 10 s. test signal see fig. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C. 1. IF = 400 mA IOSL = 0.6 mW/m2 Maximum Irradiance Directivity Ee max ϕ1/2 30 ± 45 W/m2 deg www.TSOP12.5/fo < tpo < tpi + 6/fo.5 mA. IR diode TSAL6200. 1 Pulse width tolerance: tpi .vishay.5/fo < tpo < tpi + 6/fo.5 35 Min 0. test signal see fig.5 mV mW/m2 Ee min 0.25 to + 85 50 260 Unit V mA V mA °C °C °C mW °C Electrical and Optical Characteristics Tamb = 25 °C. Ev = 40 klx.0 5 100 .4 0. 1. unless otherwise specified Parameter Supply Current (Pin 2) Supply Voltage (Pin 2) Transmission Distance Ev = 0.com 2 Document Number 82013 Rev.5/fo < tpo < tpi + 6/fo.25 to + 85 .0 5 .5 Unit mA mA V m Output Voltage Low (Pin 3) Minimum Irradiance (30 .2 1. 19-Jan-07 .35 250 0. 1 tpi .7 mW/m2..Ee = 0.0. 1.12. 1 Angle of half transmission distance Test condition VS = 5 V.

6 0.com 3 .0 0.0 0.A.0 0.6 0.4 A. T = 5900 K) 600 µs T = 60 ms Output Signal.0 Ee .0 1000.1 0.1 1.2 0.5 0.5/f 0 < tpo < tpi + 6/f 0 tpo2 ) t 16909 10.5 3.Output Pulse Width (ms) 0.5 0. unless otherwise specified Ee Optical Test Signal (IR diode TSAL6200. optical test signal. optical test signal.8 0.0 16908 Ee .Ambient DC Irradiance (W/m 2) Figure 3.10 1.Toff .illum.1 1. T= 2855 K) 10 W/m2 8.5 1. Pulse Length and Sensitivity in Dark Ambient Figure 5.5 2. f = f0. 4) 600 µs t 94 8134 VO VOH VOL Ton Toff t 16911 0.3 10.0 = 950 nm.0 Ee min .Threshold Irradiance (mW/m2 ) 3.9 0. 19-Jan-07 www.0 1.0 1000.00 100.5 0.01 Ambient.0 0.0 10000.0 0. 1.9 Output Pulse 1.4 0.0 0. IF = 0.6 0. fig. 3 Toff Ton t tpi * * tpi VO VOH VOL td1 ) T 10/fo is recommended for optimal function 16110 Output Signal 1) 2) 7/f0 < td < 15/f0 tpi .TSOP12. 1 Input Burst Duration E e min /E e . Frequency Dependence of Responsivity Ee Optical Test Signal 4.Output Pulse Width (ms) 0.7 0. Sensitivity in Bright Ambient Document Number 82013 Rev.00 E .0 Ton .0 100. T = 10 ms) 1.2 t po .vishay.Irradiance (mW/m²) Figure 1.4 klx (Std. Responsivity 1.0 100.2 0.1 0.4 0.7 0.7 f = f0 ± 5 % f (3 dB) = f0/10 0. = 950 nm Correlation with ambient light sources: 10 W/m2 1.4 0.Rel.12.8 0.3 0.00 10.Relative Frequency 1. 30 pulses.0 2. fig.2 0.2 klx (Daylight.Irradiance (mW/m²) 16925 Figure 2. (see fig. Output Function Figure 4. Output Function Figure 6. Vishay Semiconductors Typical Characteristics Tamb = 25 °C.8 0.3 0.0 10000.1 f/f0 ..0 = 950 nm. Output Pulse Diagram 1.9 1.0 0.

Vishay Semiconductors Ee min. Burstlength Figure 12.4 0. Sensitivity vs. Electric Field Disturbances Figure 11.5 f = 1 kHz 0.Relative Transmission Distance Figure 9.0 0.com 4 Document Number 82013 Rev. Sensitivity vs.8 1.4 0.7 Max.6 0. 1. Ee = 2 mW/m2 0.0 . Envelope Duty Cycle vs.0 0 16913 0° 10 ° 20 ° 30 ° 40 ° 1.AC Voltage on DC Supply Voltage (mV) 16912 0.0 f(E) = f0 1.0 0.4 0.6 d rel .Ambient Temperature (°C) 90 Figure 7.5 f = 100 Hz 0.6 1.4 0.8 0.0 100.0 0. Horizontal Directivity ϕx www.2 0 0.15 0 15 30 45 60 75 16918 Tamb .2 1.2 0.0 1000.0 0.0 E .vishay.1 0.Threshold Irradiance (mW/m²) 850 950 1050 1150 94 8147 94 8408 .2 1.8 f = 38 kHz.8 0.3 0.0 10.Threshold Irradiance (mW/m²) Ee min . Envelope Duty Cycle 0.TSOP12.Field Strength of Disturbance (kV/m) S ( ) rel .4 0.4 0.12. Wavelength 0.2 0.Threshold Irradiance (mW/m²) 2.3 0.4 0.1 1.6 0.2 0. Relative Spectral Sensitivity vs.5 0.1 Sensitivity in dark ambient 1. 19-Jan-07 .6 0.9 0. Max.7 50 ° 60 ° 70 ° 80 ° 0.8 0.5 0.0 0.6 2.6 95 11340p2 20 40 60 80 100 120 Burst Length (number of cycles/burst) 0. Supply Voltage Disturbances Figure 10. Ambient Temperature 2..0 VsRMS .Wavelength (nm) Figure 8.30 .2 0. Sensitivity vs.2 0 750 E e min .Relative Spectral Sensitivity 1.0 f = fo f = 10 kHz 1.0 0.

Vishay Semiconductors 0° 10 ° 20 ° 30 ° 40 ° 1. are: • DC light (e. • Burst length should be 10 cycles/burst or longer. R-2000 Code. • After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. A bandpass filter.12. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided.8 0. burst length and duty cycle.. Sony Code. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e. an integrator stage and an automatic gain control are used to suppress such disturbances. it can still receive the data signal.7 50 ° 60 ° 70 ° 80 ° 0.g.0 0. The distinguishing mark between data signal and disturbance signal are carrier frequency. RC6 Code. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal 0 16921 10 10 Time (ms) 15 20 Figure 15.com 5 . • For each burst which is longer than 1.6 d rel . When a disturbance signal is applied to the TSOP12.g. RC5 Code.. NEC Code (repetitive data). Some examples for suitable data format are: NEC Code (repetitive pulse). Some examples for such disturbance signals which are suppressed by the TSOP12.Relative Transmission Distance 95 11339p2 Figure 13. IR Signal from Fluorescent Lamp with high Modulation Document Number 82013 Rev.9 0. Toshiba Micom Format.4 0.8 ms a corresponding gap time is necessary at some time in the data stream.2 0.4 0. 1. 38 kHz). However the sensitivity is reduced to that level that no unexpected pulses will occur.TSOP12.. This gap time should be at least 4 times longer than the burst.. • Up to 800 short bursts per second can be received continuously.vishay. 19-Jan-07 www. Sharp Code. IR Signal IR Signal from fluorescent lamp with low modulation 0 16920 5 10 Time (ms) 15 20 Figure 14.2 0 0. from tungsten bulb or sunlight) • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15).6 0. Vertical Directivity ϕy Suitable Data Format The circuit of the TSOP12.

Vishay Semiconductors Package Dimensions in mm 96 12116 www.vishay.12.TSOP12. 1..com 6 Document Number 82013 Rev. 19-Jan-07 .

B. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). Council Decision 88/540/EEC and 91/690/EEC Annex A.. Regularly and continuously improve the performance of our products. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application. The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. P. processes. Germany Document Number 82013 Rev.12. Annex A. directly or indirectly. injury or death associated with such unintended or unauthorized use. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. D-74025 Heilbronn. arising out of. and expenses. 1. 19-Jan-07 www. 2. We reserve the right to make changes to improve technical design and may do so without further notice. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. any claim of personal damage. Meet all present and future national and international statutory requirements. B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. costs.O. Various national and international initiatives are pressing for an earlier ban on these substances. Parameters can vary in different applications. 3535.vishay. Vishay Semiconductor GmbH. damages. B and C (transitional substances) respectively. as well as their impact on the environment. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. All operating parameters must be validated for each customer application by the customer. distribution and operating systems with respect to their impact on the health and safety of our employees and the public.TSOP12. 1. the buyer shall indemnify Vishay Semiconductors against all claims.com 7 .

or anyone on its behalf.Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. to any intellectual property rights is granted by this document. Vishay assumes no liability whatsoever. or other intellectual property right. Document Number: 91000 Revision: 08-Apr-05 www. or life-sustaining applications. Except as provided in Vishay's terms and conditions of sale for such products. assumes no responsibility or liability for any errors or inaccuracies.vishay. and disclaims any express or implied warranty. copyright. express or implied. life-saving. relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose.com 1 . Inc. No license. Information contained herein is intended to provide a product description only. merchantability.. or infringement of any patent. by estoppel or otherwise. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. The products shown herein are not designed for use in medical. Vishay Intertechnology.