DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4448 High-speed diodes
Product specification Supersedes data of 2002 Jan 23 2004 Aug 10

axial leaded. 100 V • Repetitive peak reverse voltage: max. MARKING TYPE NUMBER 1N4148 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 1N4448 − DESCRIPTION The diodes are type branded. 4 ns • General application • Continuous reverse voltage: max. 1N4448 a MAM246 Fig. handbook. MARKING CODE 1N4148PH or 4148PH 1N4448 VERSION SOD27 hermetically sealed glass package. and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. 100 V • Repetitive peak forward current: max.Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. halfpage k 1N4148. DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology. DO-35) and symbol. 450 mA. APPLICATIONS • High-speed switching.1 Simplified outline (SOD27. 2 leads 2004 Aug 10 2 .

note 1 CONDITIONS − − − − 1N4148. 100 100 200 450 V V UNIT mA mA 4 1 0. Tj = 100 °C. see Fig. RL = 100 Ω.6 − − − − CONDITIONS total power dissipation storage temperature junction temperature Tamb = 25 °C. note 1 − − − − see Fig.8 − Vfr forward recovery voltage 2.5 V THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm. see Fig. SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave.5 VR = 20 V.72 1 25 50 3 4 4 nA µA µA pF ns when switched from IF = 10 mA to − IR = 60 mA. Device mounted on a printed-circuit board without metallization pad. SYMBOL VF 1N4148 1N4448 IR IR Cd trr reverse current reverse current. see Fig. VR = 0 V.5 500 +200 200 A A A mW °C °C −65 − MIN. measured at IR = 1 mA. 1N4448 MIN. Tj = 150 °C. note 1 VALUE 240 350 UNIT K/W K/W 2004 Aug 10 3 .5 VR = 20 V. see Fig. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. V V V UNIT 0.62 − 0. Tj = 25 °C prior to surge.Philips Semiconductors Product specification High-speed diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.2. lead length 10 mm.5 f = 1 MHz. MAX.7 when switched from IF = 50 mA. tr = 20 ns. 1 MAX.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. see Fig.3 IF = 10 mA IF = 5 mA IF = 100 mA VR = 20 V. see Fig. see Fig.

10 102 103 tp (µs) 104 Fig. (2) Tj = 25 °C. 102 handbook.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.3 Forward current as a function of forward voltage. typical values. (3) Tj = 25 °C. full pagewidth IFSM (A) MBG704 10 1 10−1 1 Based on square wave currents. Fig. 2004 Aug 10 4 . 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. halfpage 600 MBG464 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (°C) 200 0 0 (1) Tj = 175 °C. Fig. maximum values.2 Maximum permissible continuous forward current as a function of ambient temperature. lead length 10 mm.Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA 1N4148. 1N4448 300 IF (mA) 200 mbg451 handbook. Tj = 25 °C prior to surge. typical values.

(2) VR = 20 V.Philips Semiconductors Product specification High-speed diodes 1N4148. halfpage 1. f = 1 MHz. Fig. typical values. 1N4448 103 IR (µA) 102 mgd290 MGD004 handbook. Fig.6 10−2 0 100 Tj (°C) 200 0. typical values.6 Diode capacitance as a function of reverse voltage.5 Reverse current as a function of junction temperature.8 1 10−1 0.2 Cd (pF) 1.0 (1) (2) 10 0.4 0 10 VR (V) 20 (1) VR = 75 V. 2004 Aug 10 5 . Tj = 25 °C. typical values.

2004 Aug 10 6 . OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Fig.T.U.7 Reverse recovery voltage test circuit and waveforms. full pagewidth tr D.T.U.8 Forward recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R = 50 Ω S D.Philips Semiconductors Product specification High-speed diodes 1N4148. Fig. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. 1N4448 handbook.

85 G1 max. 25. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 2004 Aug 10 7 .4 0 1 scale 2 mm Note 1. The marking band indicates the cathode. 4.25 L min. 1.56 D max. 1N4448 SOD27 (1) b D L G1 L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0. axial leaded.Philips Semiconductors Product specification High-speed diodes PACKAGE OUTLINE Hermetically sealed glass package. 2 leads 1N4148.

or mask work right infringement. manufacturing and supply. 3. For data sheets describing multiple type numbers. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances. the highest-level product status determines the data sheet status. and/or software described or contained herein in order to improve design and/or performance. Exposure to limiting values for extended periods may affect device reliability. or systems where malfunction of these products can reasonably be expected to result in personal injury. Stress above one or more of the limiting values may cause permanent damage to the device. II Preliminary data Qualification III Product data Production Notes 1. unless otherwise specified. devices. Philips Semiconductors reserves the right to change the specification in any manner without notice. standard cells.philips. Philips Semiconductors assumes no responsibility or liability for the use of any of these products. Supplementary data will be published at a later date. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). 1N4448 This data sheet contains data from the objective specification for product development. 2. For detailed information see the relevant data sheet or data handbook. conveys no licence or title under any patent. copyright. copyright. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits. and makes no representations or warranties that these products are free from patent. Application information  Applications that are described herein for any of these products are for illustrative purposes only.semiconductors. Philips Semiconductors reserves the right to make changes at any time in order to improve the design. 2004 Aug 10 8 . Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Philips Semiconductors Product specification High-speed diodes DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION 1N4148. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www. or mask work right to these products. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Philips Semiconductors reserves the right to change the specification without notice. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Please consult the most recently issued data sheet before initiating or completing a design. When the product is in full production (status ‘Production’). This data sheet contains data from the product specification. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. in order to improve the design and supply the best possible product. This data sheet contains data from the preliminary specification.

Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.com. The information presented in this document does not form part of any quotation or contract. 2004 SCA76 All rights are reserved. No liability will be accepted by the publisher for any consequence of its use. is believed to be accurate and reliable and may be changed without notice.philips.Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.V. Publication thereof does not convey nor imply any license under patent. Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541 .com. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. © Koninklijke Philips Electronics N.or other industrial or intellectual property rights.semiconductors.philips.