Si4825DY

New Product

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V)
30 0.022 @ VGS = 4.5 V 9.2

rDS(on) (W)
0.014 @ VGS = 10 V

ID (A)
11.5

S S S

SO-8
S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID 9.2 IDM IS PD TJ, Tstg 2.5 3.0 1.9 55 to 150 50 1.3 1.5 W 0.9 _C 6.5 A

Symbol
VDS VGS

10 secs

Steady State
30 "25

Unit
V

11.5

8.1

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 71291 S-10679Rev. A, 31-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State

Symbol
RthJA RthJF

Typical
32 68 15

Maximum
42 85 18

Unit
_C/W

Si4825DY
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "25 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = 10 V VGS = 10 V, ID = 11.5 A VGS = 4.5 V, ID = 9.2 A VDS = 15 V, ID = 11.5 A IS = 2.5 A, VGS = 0 V 50 0.012 0.018 28 0.8 1.2 0.014 0.022 1.0 "100 1 5 V nA mA A W S V

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.5 A, di/dt = 100 A/ms VDD = 15 15 V V, , RL = 15 W ID ^ 1 1 A, A VGEN = 10 10 V V, RG = 6 W VDS = 15 15 V V, VGS = 10 10 V V, ID = 11.5 11 5 A 55 15.5 7.5 15 13 97 51 45 25 20 150 75 80 ns 71 nC C

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics
50 VGS = 10 thru 5 V 4V 40 I D Drain Current (A) I D Drain Current (A) 40 50

Transfer Characteristics

30

30

20 3V 10

20 TC = 125_C 25_C 55_C 2 3 4 5

10

0 0 1 2 3 4 5

0 0 1

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

www.vishay.com S FaxBack 408-970-5600

Document Number: 71291 S-10679Rev. A, 31-Jul-00

Si4825DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025 r DS(on) On-Resistance ( W ) 5000

Vishay Siliconix

Capacitance

0.015 VGS = 10 V 0.010

C Capacitance (pF)

0.020

VGS = 4.5 V

4000

Ciss

3000

2000 Coss

0.005

1000 Crss

0 0 10 20 30 40 50

0 0 6 12 18 24 30

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

Gate Charge
10 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = 11.5 A 8 1.6

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 11.5 A 1.4

r DS(on) On-Resistance (W) (Normalized) 24 36 48 60

1.2

1.0

0.8

0 0 12 Qg Total Gate Charge (nC)

0.6 50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

Source-Drain Diode Forward Voltage

50 0.05

On-Resistance vs. Gate-to-Source Voltage

r DS(on) On-Resistance ( W )

0.04 ID = 11.5 A 0.03

I S Source Current (A)

TJ = 150_C 10

0.02

TJ = 25_C

0.01

1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-to-Drain Voltage (V)

0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)

Document Number: 71291 S-10679Rev. A, 31-Jul-00

www.vishay.com S FaxBack 408-970-5600

Si4825DY
Vishay Siliconix
New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage
1.0 0.8 40 V GS(th) Variance (V) 0.6 0.4 0.2 0.0 10 0.2 0.4 50 0 102 ID = 250 mA Power (W) 30 50

Single Pulse Power, Junction-to-Ambient

29

25

25

50

75

100

125

150

101

1 Time (sec)

10

100

600

TJ Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Duty Cycle = 0.5

Normalized Effective Transient Thermal Impedance

0.2
Notes:

0.1 0.1 0.05

t1 PDM

0.02

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 68_C/W

t1 t2

Single Pulse 0.01 104 103 102 101 1 Square Wave Pulse Duration (sec)

3. TJM TA = PDMZthJA(t) 4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2 1 Duty Cycle = 0.5

Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10

www.vishay.com S FaxBack 408-970-5600

Document Number: 71291 S-10679Rev. A, 31-Jul-00

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.