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ay. Sem and 7, Eee ia a nw ANd Jp 5 V for Vis. , Sa Use a 0% 1 x is (A) Sketch the fy-Vpy necessary. haracteristic for the soem 7 ae cteteemeat ode Moser oe Hodges model, fee FHM, tox = 800 A, and ye 1.2 V. With the Shichisan. vith Vos 72.3.4 and5V Give te value of es Pern © 2p ep = Nz = 5X10" cm- nel mobility of 4. = $, 1, 400m, a 7 7 ee 25 yum, and no interface charge, With the PSpic level? model pi sh ‘ i is ~ 2.0 Vit (a Fad de Ra Vr by plotting /7p as Vos is varied from —1 V to +2.0 V in 0.1-¥ steps. , (b) Find Vr as in part (a), but with Ny = 8 1 ame V7 as in part (a), but with p ~ os eit N, = 8 10% cm? (@) Find Vy as in part (a), but with t,. = 60 nm. and Ny (©) Find V; as in part (a), but use an n* Si gate ‘ Please note how you can vary the parameters to change V7- 7 For the ideal oxide parameters of Problem 8.3, par) se Spice opt the Io Vos cara istics for Vps from 0 to +5 V in 0.2-V steps. Set the Ip scale from os any So Ota le