INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER BDT64 Collector-Emitter Voltage BDT64A BDT64B BDT64C BDT64 Collector-Emitter Voltage BDT64A BDT64B BDT64C VEBO IC ICM IB
B

BDT64/A/B/C

VALUE -60 -80

UNIT

VCER

V -100 -120 -60 -80 V -100 -120 -5 -12 -20 -0.5 125 150 -65~150 V A A A W
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VCEO

Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range

PC TJ Tstg

THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1 UNIT /W

isc Websitewww.iscsemi.cn

Datasheet pdf - http://www.DataSheet4U.co.kr/

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER BDT64 BDT64A IC= -30mA ;IB=0
B

BDT64/A/B/C

CONDITIONS

MIN -60 -80

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

V -100 -120

BDT64B BDT64C

VCE(sat)-1 VCE(sat)-2 VBE(on) VECF-1 VECF-2 ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 COB

Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance

IC= -5A; IB= -20mA

B

-2.0 -3.0 -2.5 -2.0 -2.0 -0.2 -0.4 -2.0 -5 1500 1000 750 200

V V V V V mA mA mA

IC= -10A; IB= -100mA IC= -5A ; VCE= -4V IF= -5A IF= -12A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150
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VEB= -5V; IC=0 IC= -1A ; VCE= -4V IC= -5A ; VCE= -4V IC= -12A ; VCE= -4V IE= 0 ; VCB= -10V; ftest=1MHz

pF

Switching times ton toff Turn-On Time Turn-Off Time 0.5 2.5 2 5 s s

IC= -5A; IB1= -IB2= -20mA; VCC= -30V

isc Websitewww.iscsemi.cn

Datasheet pdf - http://www.DataSheet4U.co.kr/