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1. Oxygen diffuse through oxide layer according to Ficks first law of diffusion
(
. At the
Si-SiO
2
interface, assume that the oxidation rate is proportional to the concentration of oxidizing
species such that
( )
. - 6
2. A <100> silicon wafer has 400 nm of oxide on its surface. How long will it take to grow an
additional 1 m of oxide in wet oxygen at 1100
o
C? Use the silicon dioxide growth graph on the
SiO
2
worked example page of your lecture notes (Semiconductor Processing). Compare graphical
and mathematical results. - 4
3. A phosphorus diffusion has a surface concentration of 510
18
/cm
3
, and the background
concentration of the p-type wafer is 110
15
/cm
3
. The Dt product for the diffusion is 10
-8
cm
2
. - 6
a. Find the junction depth for a Gaussian distribution
b. Find the junction depth for an erfc profile
c. Draw a graph of the two profiles.
4. Boron is implanted with energy of 60 keV through a 0.25m layer of silicon dioxide. The
implanted dose is 110
14
/cm
2
. Using the projected range and straggle graphs of your lecture
notes. - 6
a. Find the boron concentration at the silicon-silicon dioxide interface
b. Find the dose in silicon.
c. Determine the junction depth if the background concentration is 310
15
/cm
3
.
5. Based on the following Paper-1, write two-page (A4) review summarising the key points of
the paper. - 10
Paper-1: H. Michael, and S. Hauch, The future of integrated circuits: a survey of
nanoelectronics, Proc. IEEE, vol. 98, Jan. 2010, pp. 11-38.
6. Based on the following Paper-2, answer following questions.
Paper-2: R. Garcia, A. W. Knoll and E. Riedo, Advanced scanning probe lithography
Nature Nanotechnology, Vol. 9 (2014) page-577.
(a) Write three advantages of SPL over conventional lithography. -3
(b) Note the basic difference between thermal (t-SPL) and thermochemical (tc-SPL). -3
(c) Lists main parameters that control the local oxidation process in oxidation SPL (o-SPL). -5
(d) Based on Fig. 5 (Paper-2), describe the Ferritin deposition process. -6
(e) What is the main control parameter of molecular deposition in dip-pen SPL. -1
7. Write a short report (limit to 5-pages) on Melbourne Centre for Nanofabrication (MCN) tour.
- 10
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