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ELEN90045 2014 (Sem-2) Assignment, 20% (Total marks-60)

1. Oxygen diffuse through oxide layer according to Ficks first law of diffusion
(

. The rate of change of oxide thickness is given by

. At the
Si-SiO
2
interface, assume that the oxidation rate is proportional to the concentration of oxidizing
species such that

(the symbols in the equations are defined in your lecture notes).


Derive the equations which describe the thickness of oxide on the wafer as a function of time.
Use the following boundary condition

( )

. - 6

2. A <100> silicon wafer has 400 nm of oxide on its surface. How long will it take to grow an
additional 1 m of oxide in wet oxygen at 1100
o
C? Use the silicon dioxide growth graph on the
SiO
2
worked example page of your lecture notes (Semiconductor Processing). Compare graphical
and mathematical results. - 4

3. A phosphorus diffusion has a surface concentration of 510
18
/cm
3
, and the background
concentration of the p-type wafer is 110
15
/cm
3
. The Dt product for the diffusion is 10
-8
cm
2
. - 6
a. Find the junction depth for a Gaussian distribution
b. Find the junction depth for an erfc profile
c. Draw a graph of the two profiles.

4. Boron is implanted with energy of 60 keV through a 0.25m layer of silicon dioxide. The
implanted dose is 110
14
/cm
2
. Using the projected range and straggle graphs of your lecture
notes. - 6
a. Find the boron concentration at the silicon-silicon dioxide interface
b. Find the dose in silicon.
c. Determine the junction depth if the background concentration is 310
15
/cm
3
.

5. Based on the following Paper-1, write two-page (A4) review summarising the key points of
the paper. - 10
Paper-1: H. Michael, and S. Hauch, The future of integrated circuits: a survey of
nanoelectronics, Proc. IEEE, vol. 98, Jan. 2010, pp. 11-38.

6. Based on the following Paper-2, answer following questions.
Paper-2: R. Garcia, A. W. Knoll and E. Riedo, Advanced scanning probe lithography
Nature Nanotechnology, Vol. 9 (2014) page-577.
(a) Write three advantages of SPL over conventional lithography. -3
(b) Note the basic difference between thermal (t-SPL) and thermochemical (tc-SPL). -3
(c) Lists main parameters that control the local oxidation process in oxidation SPL (o-SPL). -5
(d) Based on Fig. 5 (Paper-2), describe the Ferritin deposition process. -6
(e) What is the main control parameter of molecular deposition in dip-pen SPL. -1

7. Write a short report (limit to 5-pages) on Melbourne Centre for Nanofabrication (MCN) tour.
- 10
~0~

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