IRF510

Data Sheet

June 1999

5.6A, 100V, 0.540 Ohm, N-Channel Power

MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.

Ordering Information
PART NUMBER
IRF510

PACKAGE
TO-220AB

File Number

1573.3

Features
5.6A, 100V
rDS(ON) = 0.540
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol
BRAND

IRF510

NOTE: When ordering, include the entire part number.

G

Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE

DRAIN (FLANGE)

166

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF510
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF510
100
100
5.6
4
20
20
43
0.29
19
-55 to 175

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250A, (Figure 10)

100

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

2.0

4.0

25

Zero-Gate Voltage Drain Current

On-State Drain Current (Note 2)

Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time

IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

VDS = Rated BVDSS, VGS = 0V

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC

250

VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7)

5.6

VGS = 20V

100

nA

VGS = 10V, ID = 3.4A (Figures 8, 9)

0.4

0.54

1.3

2.0

11

ns

25

36

ns

15

21

ns

12

21

ns

5.0

7.7

nC

2.0

nC

3.0

nC

VGS = 50V, ID = 3.4A (Figure 12)

ID 5.6A, RGS = 24, VDD = 50V, RL = 9,
VDD = 50V, VGS = 10V
MOSFET switching times are essentially independent
of operating temperature

tf

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

Gate to Source Charge

Qgs

Gate to Drain Miller Charge

Qgd

VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figure 14)
Gate charge is essentially independent of operating
temperature.

Input Capacitance

CISS

135

pF

Output Capacitance

COSS

80

pF

Reverse-Transfer Capacitance

CRSS

20

pF

3.5

nH

4.5

nH

7.5

nH

3.5

oC/W

80

oC/W

Internal Drain Inductance

LD

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

Measured From the

Contact Screw On Tab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Internal Source Inductance

LS

Junction to Case

RJC

Junction to Ambient

RJA

167

Measured From The

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Free air operation

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S

IRF510
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

Pulse Source to Drain Current
(Note 3)

ISD
ISDM

Test Conditions
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode

MIN

TYP

MAX

UNITS

5.6

20

2.5

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time
Reverse Recovered Charge

VSD

TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13)

trr

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/s

4.6

96

200

ns

QRR

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/s

0.17

0.4

0.83

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, start TJ = 25oC, L = 910H, RG = 25, peak IAS = 5.6A.

Typical Performance Curves Unless Otherwise Specified

10

ID, DRAIN CURRENT (A)

1.0
0.8
0.6
0.4

0.2

0
25

125
50
75
100
TC , CASE TEMPERATURE (oC)

150

175

25

50

75

125

100

150

175

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

ZJC, TRANSIENT

10
THERMAL IMPEDANCE (oC/W)

POWER DISSIPATION MULTIPLIER

1.2

0.5
1
0.2
0.1
0.05
0.1

PDM

0.02
0.01

t1
t2

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC
0.01
10-5

10-4

0.1
10-2
10-3
t1, RECTANGULAR PULSE DURATION (S)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

168

10

IRF510
Typical Performance Curves Unless Otherwise Specified

10

OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)

VGS = 10V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

100

10s
10

100s

1ms
1
DC

TC = 25oC
TJ = 175oC
SINGLE PULSE

0.1

(Continued)

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VGS = 8V
6
VGS = 7V
4
VGS = 6V
2
VGS = 5V
VGS = 4V

0
102

10

103

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

ID(ON), ON-STATE DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 10V

8
VGS = 8V
6
VGS = 7V
4
VGS = 6V
2
VGS = 5V
VGS = 4V
0

2
4
6
8
VDS, DRAIN TO SOURCE VOLTAGE (V)

10

0.1

3.0
NORMALIZED ON RESISTANCE

ON RESISTANCE ()

rDS(ON), DRAIN TO SOURCE

2
VGS = 10V
VGS = 20V
1

0
12

16

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

169

TJ = 25oC

TJ = 175oC

2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)

10

FIGURE 7. TRANSFER CHARACTERISTICS

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VDS 50V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

10-2
0

10

50

FIGURE 6. SATURATION CHARACTERISTICS

40

FIGURE 5. OUTPUT CHARACTERISTICS

10

30

VDS , DRAIN TO SOURCE VOLTAGE (V)

VDS , DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

20

20

2.4

ID = 3.4A, VGS = 10V

PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

1.8

1.2

0.6

0
-60 -40

-20

20

40

60

80

100 120 140 160 180

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF510
Typical Performance Curves Unless Otherwise Specified

(Continued)

1.25

500

1.15

C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250A

1.05

0.95

VGS = 0V, f = 1MHz

CISS = CGS + CGD
400 CRSS = CGD
COSS CDS + CGD
300

200

CISS
COSS

0.85

100

0.75
-60 -40 -20

CRSS
0

20

40

80

60

100 120 140 160 180

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

TJ = 25oC

1.5
TJ = 175oC
1.0

0.5

4
6
ID, DRAIN CURRENT (A)

102

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

10

TJ = 175oC

TJ = 25oC
0.1
0

10

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

0.4
0.8
1.2
1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 3.4A
VDS = 80V
VDS = 50V
VDS = 20V

16

12

4
6
Qg, GATE CHARGE (nC)

10

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

170

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

ISD, SOURCE TO DRAIN CURRENT (A)

2.0

10

100

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

VGS, GATE TO SOURCE VOLTAGE (V)

gfs, TRANSCONDUCTANCE (S)

2.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.0

IRF510
Test Circuits and Waveforms
VDS
BVDSS
L

tP

VARY tP TO OBTAIN

IAS

RG

REQUIRED PEAK IAS

VDS
VDD

VDD
-

VGS
DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

0.2F

50%
PULSE WIDTH

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

50%

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

0.3F

VGS

Qgs
D
VDS
DUT

0
IG(REF)

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

171

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORM

IRF510

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172

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