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# Electrical

Energy
Conversion and
Power Systems

de Oviedo

## Energy storing and recovering in power systems and

HEV and EV

BUSBAR

Third Semester
Lecturer: Juan Daz

## Wiring and Packaging

Parasitic Inductances will appear ALWAYS.
The switches also have inherent inductors

INTERRUPTOR

TANQUE
RESONANTE

## This is our equivalent circuit

We open the circuit

Overvoltage
EMI
Switching losses
Wires dissipating can heat the switches

L eq

Vce

3

## Wiring and Packaging

2001/06/15 01:28:55
Stopped
CH1=20V
DC 10:1

CH1=20V

=Filter=
Smoothing : OFF
BW : FULL

NORM:100MS/s
CH2=50V
DC 10:1

CH3=10mV
DC 1:1

2us/div
(2us/div)
CH4=50V
DC 100:1

CH2=50V

CH3=10mV

CH4=50V

=Offset=
CH1 : 0.0V
CH2 : 0.0V
CH3 : 0.0000V
CH4 : 0.0V

=Record Length=
Main : 2K
Zoom : 200

=Trigger=
Mode : NORMAL
Type : EDGE CH1
Delay : 1.5ns
Holdoff : MINIMUM

T -130ns
1/ T 7.69231MHz

200ns/div

## Wiring and Packaging

We add capacitors, decoupling the power supply
- Capacitors also add an inductor.
- If we want short distances, we can not add a lot of capacitors.
- They have to be as close to the switch as possible.

SCREWS
SCREWS MATERIAL!!
MATERIAL!!
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## Wiring and Packaging

But, How we send the energy to the IGBTS? We need wires

Conducto
r
Dielectric
We are going to use capacitors!!

## As conductors copper, silvered copper, gold-copper etc.

and as dielectric materials, high isolation capabilities, high
permitivity in a reduced thickness
(Kapton, NOMEX,
AMRON).
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## Wiring and Packaging

Not
Not only
only in
in power
power electronics
electronics
8

## Wiring and Packaging

Even the driver needs to
minimise the lenght
connections

## Wiring and Packaging

Keep in mind:
-Bus bar capacitor value depends on dielectric and dimensions
(It is a capacitor).
-SKIN effect has to be considered
-Always we are going to introduce an inductor
-The dielectric has to whisthand the voltaje applied
1/2 L+ 1/2 R

1/2 L+ 1/2 R

ELDRE:
Fuente

Carga

primaria
l

10

02/0
5/10
Sto
ppe
d

12:4
0:11

<<
Z1:400
>>

CH1

40
A/
D

z
1

CH3

(200
MS/s
:200
)
MS/
s 20
0n
s

MATH
1

C
H
2
C
H12.80
1 2E+0
0

Fr
eq
0.07
GHz
Hi
g
h

CH2

C
H
2

Hi
g
90.
h
62

Y
296.8
+
8E+0 600
Y
Y 0
***..00
s
X
2665***
+
7.245
X
s
2665
8.4901.2
X
s
450.80
1 X
/
3MH
z

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