SavantIC Semiconductor

Product Specification

BD135 BD137 BD139

Silicon NPN Power Transistors

DESCRIPTION
With TO-126 package
High current
Complement to type BD136/138/140
APPLICATIONS
Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN

DESCRIPTION

Emitter

Collector;connected to
mounting base

Base

Absolute maximum ratings (Ta=25 )

SYMBOL

PARAMETER

CONDITIONS
BD135

VCBO

VCEO

Collector-base voltage

Collector-emitter voltage

BD137

Open emitter

Emitter -base voltage

IC

60

BD139

100

BD135

45

BD137

UNIT

45

Open base

BD139
VEBO

VALUE

60

100
Open collector

Collector current (DC)

1.5

ICM

Collector current-Peak

IBM

Base current-Peak

Pt

Total power dissipation

Tj

Junction temperature

150

Tstg

Storage temperature

-65~150

Tamb

Operating ambient temperature

-65~150

Tmb670

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

Thermal resistance from junction to ambient

100

K/W

Rth j-mb

Thermal resistance from junction to mounting base

10

K/W

SavantIC Semiconductor

Product Specification

BD135 BD137 BD139

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL
VCEsat
VBE

ICBO

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Collector-emitter saturation voltage

IC=0.5A; IB=50mA

0.5

Base-emitter voltage

IC=500mA ; VCE=2V

1.0

VCB=30V; IE=0

100

nA

VCB=30V; IE=0 Tj=125

10

100

nA

Collector cut-off current

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=5mA ; VCE=2V

40

hFE-2

DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16

IC=150mA ; VCE=2V

63
63
100

hFE-3

DC current gain

IC=500mA ; VCE=2V

25

Transition frequency

IC=50mA; VCE=5V ;f=100MHz

fT

TYP.

250
160
250

190

MHz

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

Fig.2 Outline dimensions

BD135 BD137 BD139