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VISHAY
Vishay Semiconductors
Features
Special Features
Advanced immunity against ambient light
No occurrence of disturbance pulses at the output
Block Diagram
Parts Table
Part
Carrier Frequency
TSOP2430
30 kHz
TSOP2433
33 kHz
TSOP2436
36 kHz
TSOP2437
36.7 kHz
TSOP2438
38 kHz
TSOP2440
40 kHz
TSOP2456
56 kHz
Application Circuit
2
25 k
VS
Circuit
Transmitter TSOPxxxx
with
TSALxxxx
R1 = 100
VS
OUT
GND
+VS
C1 =
4.7 F
C
VO
GND
1
Input
AGC
PIN
Band
Pass
Control Circuit
Demodulator
OUT
GND
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TSOP24..
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VS
- 0.3 to +
6.0
IS
mA
VO
- 0.3 to +
6.0
mA
Supply Voltage
(Pin 2)
Supply Current
(Pin 2)
Output Voltage
(Pin 1)
Output Current
(Pin 1)
IO
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Tj
100
Tstg
- 25 to + 85
Tamb
- 25 to + 85
Power Consumption
(Tamb 85 C)
Ptot
50
mW
Soldering Temperature
t 10 s, 1 mm from case
Tsd
260
Symbol
Min
Typ.
Max
Unit
VS = 5 V, Ev = 0
Test condition
ISD
0.8
1.2
1.5
mA
VS = 5 V, Ev = 40 klx, sunlight
ISH
1.5
VS
Transmission Distance
VOL
Ee min
Ee min
Irradiance
Ee max
Directivity
1/2
4.5
mA
5.5
35
V
m
250
mV
0.2
0.4
mW/m2
0.3
0.5
mW/m2
30
W/m2
45
deg
t
tpi *
T
* tpi w 10/fo is recommended for optimal function
VO
16110
Output Signal
1)
2)
VOH
VOL
tpo2 )
td1 )
1.0
0.8
0.7
0.6
0.5
0.4
0.3
l = 950 nm,
optical test signal, fig.1
0.2
0.1
0.0
0.1
t
16908
Output Pulse
0.9
Ee
1.0
10.0
100.0 1000.010000.0
Ee Irradiance ( mW/m2 )
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TSOP24..
VISHAY
Vishay Semiconductors
Optical Test Signal
600 ms
600 ms
T = 60 ms
94 8134
VO
VOH
VOL
Ton
4.0
Ee
3.0
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
Toff
3.5
1.0
0.9
Ton
0.7
0.6
0.5
Toff
0.4
0.3
l = 950 nm,
optical test signal, fig.3
0.2
0.1
0.0
0.1
1.0
10.0
100.0 1000.010000.0
Ee Irradiance ( mW/m2 )
16909
1.0
0.8
0.6
0.4
f = f0"5%
Df ( 3dB ) = f0/10
0.9
1.1
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
2.0
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
1.3
16925
100.00
1.2
0.0
0.7
10.00
2.0
16912
0.2
1.00
0.8
0.10
16911
94 8147
0.4
0.8
1.2
1.6
2.0
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TSOP24..
VISHAY
Vishay Semiconductors
0q
0.4
10q
20q
30q
0.3
40q
1.0
0.2
0.9
50q
0.8
60q
0.1
70q
0.7
f = 38 kHz, Ee = 2 mW/m2
80q
0.0
10
30
50
70
90
110
16917
0.6
96 12223p2
0.6
0.4
0.2
0
0.2
0.4
drel Relative Transmission Distance
0.4
0.3
0.2
0.1
0.0
30 15
15
30
45
60
75
90
16918
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
850
16919
950
1050
1150
l Wavelength ( nm )
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TSOP24..
VISHAY
Vishay Semiconductors
IR Signal
Signals from fluorescent lamps with electronic ballast with high or low modulation ( see Figure 13 or Figure 14 ).
10
15
20
Time ( ms )
16920
IR Signal
16921
10
15
20
Time ( ms )
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TSOP24..
VISHAY
Vishay Semiconductors
Package Dimensions in mm
13655
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TSOP24..
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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