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PolarHVTM HiPerFET

Power MOSFET

IXFB 100N50P

VDSS
ID25

RDS(on)
trr

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

Symbol

Test Conditions

VDSS

TJ = 25° C to 150° C

500

V

VDGR

TJ = 25° C to 150° C; RGS = 1 MΩ

500

V

VGSS

Continuous

±30

V

VGSM

Transient

±40

V

ID25
IDRMS
IDM

TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM

100
75
250

A
A
A

IAR

TC = 25° C

100

A

EAR

TC = 25° C

100

mJ

EAS

TC = 25° C

5

J

dv/dt

IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 2 Ω

20

V/ns

PD

Maximum Ratings

1250

W

-55 ... +150
150
-55 ... +150

°C
°C
°C

300
260

°C
°C

30..120/7.5...2.7

N/lb

TJ
TJM
Tstg
TL
TSOLD

1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s

FC

Mounting force

PLUS264TM (IXFB)

G

Weight

10

g

Characteristic Values
Min. Typ.
Max.

BVDSS

VGS = 0 V, ID = 3 mA

500

VGS(th)

VDS = VGS, ID = 8 mA

3.0

IGSS

VGS = ±30 VDC, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

VGS = 10 V, ID = 0.5 ID25, Note 1

© 2006 IXYS All rights reserved

TJ = 125° C

S

D = Drain
TAB = Drain

Features
l

l

l

International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect

Advantages
l
l
l

Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)

(TAB)
D

G = Gate
S = Source

l

TC = 25° C

= 500 V
= 100 A
≤ 49 mΩ

≤ 200 ns

Plus 264TM package for clip or spring
Space savings
High power density

V
5.0

V

±200

nA

25
2000

µA
µA

49

mΩ

DS99496E(01/06)

Note 1 50 80 S 20 nF 1700 pF 140 pF 36 ns 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC Ciss VGS = 0 V.162.5 VDSS.025 5.063.835.5 ID25 Qgd PLUS264TM (IXFB) Outline 0.481 5.072 4. Note 1 1.5 ID25.771.844 5. unless otherwise specified) Min.583.683.796 5. Typ.106 4.728 B1 6. ID = 0. and dimensions. VGS = 0 V.5 V trr IF = 25A.381.5 VDSS. VDS = 0. VDS = 0.710.404.405B2 6.5 ID25 td(off) RG = 1 Ω (External) tf Qg(on) Qgs VGS = 10 V.344 6. Typ.10 ° C/W RthJC ° C/W 0.0 µC A Notes: 1. duty cycle d≤ 2 % IXYS reserves the right to change limits.117 5.710. -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0. unless otherwise specified) Min. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS. Max.123 B1 6.692 6.343 6.585 6.486. ID =0.237.187.727.715 6.961 5. gfs VDS = 20 V.508 5.IXFB 100N50P Symbol Test Conditions Characteristic Values (TJ = 25° C. test conditions.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C.259.665 6.850.034. IXYS MOSFETs and IGBTs are covered by 4.S.049.592 one or moreof the following U.505 6. Pulse test.6 6. ID = 0. patents: 4.478 B2 . Max.306.307 5.017.463 6. f = 1 MHz Coss Crss td(on) tr VGS = 10 V.881.931.534. t ≤300 µs. VDS = 25 V.759.065 B1 6.

4.5 2 2.Normalized 14 3.4 0 0 1 2 3 4 5 6 7 8 9 10 -50 11 -25 0 25 50 75 100 125 150 125 150 T J . R DS(on) Normalized to ID = 50A Value v s.5 4 4. Extended Output Characteristics @ 25ºC 100 220 V GS = 10V 8V 90 180 80 160 70 7V 60 I D .Amperes R DS(on) .Normalized I D . 2.Volts V DS .5 5 5.8 0 0 20 40 60 80 100 120 I D .9 I D = 100A 1. 5.5 0 2 4 6 8 100 18 20 22 24 26 2.Amperes V GS = 10V 9V 200 50 40 6V 30 8V 140 120 100 7V 80 60 20 40 10 20 5V 0 6V 0 0 0.5 3 3.2 1. Junction Temperature Fig.8 70 60 50 6V 40 30 2.5 1 1.6 70 2.8 External Lead Current Limit 80 TJ = 125ºC 2.8 1.Degrees Centigrade 100 . Output Characteristics @ 25ºC Fig. Output Characteristics @ 125ºC 90 10 V DS .2 I D . 1.Amperes I D . 3.4 TJ = 25ºC 20 1. R DS(on) Normalized to ID = 50A Value vs.Amperes © 2006 IXYS All rights reserved 140 160 180 200 220 -50 -25 0 25 50 75 T J .Volts Fig.IXFB 100N50P Fig. 6. Maximum Drain Current v s.3 1 20 5V 0.6 I D = 50A 1.2 10 1 0.Amperes 16 V GS = 10V 2. Drain Current Fig.Degrees Centigrade V DS .Volts 2 1.6 60 50 40 30 1.4 2. Case Temperature 90 3 V GS = 10V 2.1 V GS = 10V 8V 7V 80 12 Fig.7 10 0.5 R DS(on) .

Volts I S .000 I D .6 0.Amperes 150 100 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0. 12.000 100µs 100 1ms 10ms 10 DC TJ = 150ºC C rss TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS .2 1.Volts IXYS reserves the right to change limits.NanoCoulombs Fig.Volts 75 100 125 150 175 200 Q G .5 7 7.8 1 1.5 5 5.4 1.Amperes 80 I D .40ºC 25ºC 125ºC 90 75 60 45 40 30 20 15 0 0 4 4. 7.PicoFarads f = 1 MHz C oss 1. Capacitance 100. 10.Siemens I D . 11. 8.Volts Fig. test conditions. Transconductance Fig. Forward-Bias Safe Operating Area Fig.Amperes 105 100 TJ = 125ºC 25ºC .4 0. Gate Charge 300 10 V DS = 250V 9 250 I D = 50A 8 I G = 10mA 7 200 V GS .6 0 25 50 V SD .000 RDS(on) Limit C iss 25µs 10.Amperes Capacitance .40ºC 80 60 TJ = .Volts 1000 . Input Admittance 160 150 135 140 120 120 g f s .000 1.IXFB 100N50P Fig. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 225 250 Fig. 9.5 6 6. and dimensions.5 0 20 40 60 V GS . 10 100 V DS .

010 0.000 0.IXFB 100N50P Fig.1 Pulse W idth . 13.Seconds © 2006 IXYS All rights reserved 1 10 . Maximum Transient Thermal Resistance R (th)JC .0001 0.01 0.ºC / W 1.001 0.100 0.001 0.