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Power Semiconductor
Devices
Version 2 EE IIT, Kharagpur 1
Lesson
4
Thyristors and Triacs
Version 2 EE IIT, Kharagpur 2
Instructional objects
On completion the student will be able to
Explain the operating principle of a thyristor in terms of the two transistor analogy.
4.1 Introduction
Although the large semiconductor diode was a predecessor to thyristors, the modern power
electronics area truly began with advent of thyristors. One of the first developments was the
publication of the P-N-P-N transistor switch concept in 1956 by J.L. Moll and others at Bell
Laboratories, probably for use in Bells Signal application. However, engineers at General
Electric quickly recognized its significance to power conversion and control and within nine
months announced the first commercial Silicon Controlled Rectifier in 1957. This had a
continuous current carrying capacity of 25A and a blocking voltage of 300V. Thyristors (also
known as the Silicon Controlled Rectifiers or SCRs) have come a long way from this modest
beginning and now high power light triggered thyristors with blocking voltage in excess of 6kv
and continuous current rating in excess of 4kA are available. They have reigned supreme for two
entire decades in the history of power electronics. Along the way a large number of other devices
with broad similarity with the basic thyristor (invented originally as a phase control type device)
have been developed. They include, inverter grade fast thyristor, Silicon Controlled Switch
(SCS), light activated SCR (LASCR), Asymmetrical Thyristor (ASCR) Reverse Conducting
Thyristor (RCT), Diac, Triac and the Gate turn off thyristor (GTO).
From the construction and operational point of view a thyristor is a four layer, three terminal,
minority carrier semi-controlled device. It can be turned on by a current signal but can not be
turned off without interrupting the main current. It can block voltage in both directions but can
conduct current only in one direction. During conduction it offers very low forward voltage drop
due to an internal latch-up mechanism. Thyristors have longer switching times (measured in tens
of s) compared to a BJT. This, coupled with the fact that a thyristor can not be turned off using
a control input, have all but eliminated thyristors in high frequency switching applications
involving a DC input (i.e, choppers, inverters). However in power frequency ac applications
where the current naturally goes through zero, thyristor remain popular due to its low conduction
loss its reverse voltage blocking capability and very low control power requirement. In fact, in
very high power (in excess of 50 MW) AC DC (phase controlled converters) or AC AC
(cyclo-converters) converters, thyristors still remain the device of choice.
A
A
p
np
(a)
n+
n+
K
G
(c)
(b)
Fig. 4.1: Constructional features of a thysistor
(a) Circuit Symbol, (b) Schematic Construction, (c) Photograph
As shown in Fig 4.1 (b) the primary crystal is of lightly doped n- type on either side of
which two p type layers with doping levels higher by two orders of magnitude are grown. As in
the case of power diodes and transistors depletion layer spreads mainly into the lightly doped nregion. The thickness of this layer is therefore determined by the required blocking voltage of the
device. However, due to conductivity modulation by carriers from the heavily doped p regions
on both side during ON condition the ON state voltage drop is less. The outer n+ layers are
formed with doping levels higher then both the p type layers. The top p layer acls as the Anode
terminal while the bottom n+ layers acts as the Cathode. The Gate terminal connections are
made to the bottom p layer.
As it will be shown later, that for better switching performance it is required to maximize
the peripheral contact area of the gate and the cathode regions. Therefore, the cathode regions are
finely distributed between gate contacts of the p type layer. An Involute structure for both the
gate and the cathode regions is a preferred design structure.
A
IA
Q1 (1)
J1
iC2
iC1
J2
p
n+
n+
J3
n-
p
p
J2
J3
n+
IG
(2) Q2
IK
K
K
K
(a)
(b)
(c)
ic1 = 1 I A + I co1
ic 2 = 2 I K + I co2
( 4.1)
( 4.2 )
Where 1 & 2 are current gains of Q1 & Q2 respectively while Ico1 & Ico2 are reverse
saturation currents of the CB junctions of Q1 & Q2 respectively.
Now from Fig 4.2 (c).
i c1 + i c2 = I A
& IA = IK
Combining Eq 4.1 & 4.4
IA =
( 4.3)
( 4.4 ) ( I G = 0 )
I co1 + I co2
I co
=
1- ( 1 + 2 ) 1- ( 1 + 2 )
( 4.5 )
Version 2 EE IIT, Kharagpur 6
IK = IA + IG
( 4.6 )
2 I G + I co
1- ( 1 + 2 )
( 4.7 )
Obviously with sufficiently large IG the thyristor can be turned on for any value of Ico (and hence
VAK). This is called gate assisted turn on of a Thyristor. This is the usual method by which a
thyristor is turned ON.
When a reverse voltage is applied across a thyristor (i.e, cathode positive with respect to anose.)
junctions J1 and J3 are reverse biased while J2 is forward biased. Of these, the junction J3 has a
very low reverse break down voltage since both the n+ and p regions on either side of this
junction are heavily doped. Therefore, the applied reverse voltage is almost entirely supported by
junction J1. The maximum value of the reverse voltage is restricted by
a) The maximum field strength at junction J1 (avalanche break down)
b) Punch through of the lightly doped n- layer.
Since the p layers on either side of the n- region have almost equal doping levels the avalanche
break down voltage of J1 & J2 are almost same. Therefore, the forward and the reverse break
down voltage of a thyristor are almost equal.Up to the break down voltage of J1 the reverse
current of the thyristor remains practically constant and increases sharply after this voltage.
Thus, the reverse characteristics of a thyristor is similar to that of a single diode.
Version 2 EE IIT, Kharagpur 7
If a positive gate current is applied during reverse bias condition, the junction J3 becomes
forward biased. In fact, the transistors Q1 & Q2 now work in the reverse direction with the roles
of their respective emitters and collectors interchanged. However, the reverse 1 & 2 being
significantly smaller than their forward counterparts latching of the thyristor does not occur.
However, reverse leakage current of the thyristor increases considerably increasing the OFF state
power loss of the device.
If a forward voltage is suddenly applied across a reverse biased thyristor, there will be
considerable redistribution of charges across all three junctions. The resulting current can
become large enough to satisfy the condition 1 + 2 = 1 and consequently turn on the thyristor.
This is called dv turn on of a thyristor and should be avoided.
dt
Exercise 4.1
1)
ii. A thyristor can conduct current in ________________ direction and block voltage in
________________ direction.
iii. A thyristor can be turned ON by applying a forward voltage greater than forward
________________ voltage or by injecting a positive ________________ current pulse
under forward bias condition.
iv. To turn OFF a thyristor the anode current must be brought below ________________
current and a reverse voltage must be applied for a time larger than ________________
time of the device.
v. A thyristor may turn ON due to large forward ________________.
Answers: (i) minority; (ii) one, both; (iii) break over, gate; (iv) holding, turn off;
(v) dv
dt
2.
Do you expect a thyristor to turn ON if a positive gate pulse is applied under reverse bias
condition (i. e cathode positive with respect to anode)?
Answer: The two transistor analogy of thyristor shown in Fig 4.2 (c) indicates that when a
reverse voltage is applied across the device the roles of the emitters and collectors of the
constituent transistors will reverse. With a positive gate pulse applied it may appear that the
device should turn ON as in the forward direction. However, the constituent transistors have very
low current gain in the reverse direction. Therefore no reasonable value of the gate current will
satisfy the turn ON condition (i.e.1 + 2 = 1). Hence the device will not turn ON.
VAK
VBRF
IA
K
ig
Ig
VBRR
Is
IH
VBRF
IL
VAK
VH
The left hand side of Fig 4.3 shows the reverse i-v characteristics of the thyristor. Once the
thyristor is ON the only way to turn it OFF is by bringing the thyristor current below holding
current (IH). The gate terminal has no control over the turn OFF process. In ac circuits with
resistive load this happens automatically during negative zero crossing of the supply voltage.
This is called natural commutation or line commutation. However, in dc circuits some
arrangement has to be made to ensure this condition. This process is called forced
commutation.
During reverse blocking if ig = 0 then only reverse saturation current (Is) flows until the reverse
voltage reaches reverse break down voltage (VBRR). At this point current starts rising sharply.
Large reverse voltage and current generates excessive heat and destroys the device. If ig > 0
during reverse bias condition the reverse saturation current rises as explained in the previous
section. This can be avoided by removing the gate current while the thyristor is reverse biased.
The static output i-v characteristics of a thyristor depends strongly on the junction temperature as
shown in Fig 4.4.
VBRF
IA
Tj =
150 135
25 75 125
25 75 125 150 Tj
VAK
Tj = 125 75 25
135 150
Vg
Vg max
d
Rg
Vg
Pgav Max
Load line
Vg min
ig
S2
Pgm
Vng
S1
Ig max
Ig
Ig min
Fig. 4.5: Gate characteristics of a thyristor.
Each thyristor has maximum gate voltage limit (Vgmax), gate current limit (Igmax) and maximum
average gate power dissipation limit ( Pgav Max ) . These limits should not be exceeded in order to
avoid permanent damage to the gate cathode junction. There are also minimum limits of Vg
(Vgmin) and Ig (Igmin) for reliable turn on of the thyristor. A gate non triggering voltage (Vng) is
also specified by the manufacturers of thyristors. All spurious noise signals should be less than
this voltage Vng in order to prevent unwanted turn on of the thyristor. The useful gate drive area
of a thyristor is then b c d e f g h.
Referring to the gate drive circuit in the inset the equation of the load line is given by
Vg = E - Rgig
A typical load line is shown in Fig 4.5 by the line S1 S2.
The actual operating point will be some where between S1 & S2 depending on the particular
device.
For optimum utilization of the gate ratings the load line should be shifted forwards the Pgav
curve without violating Vg
Max
Max
optimum load line from which optimum values of E & Rg can be determined.
It is however customary to trigger a thyristor using pulsed voltage & current. Maximum power
dissipation curves for pulsed operation (Pgm) allows higher gate current to flow which in turn
reduces the turn on time of the thyristor. The value of Pgm depends on the pulse width (TON) of
the gate current pulse. TON should be larger than the turn on time of the thyristor. For TON larger
Version 2 EE IIT, Kharagpur 11
than 100 s, average power dissipation curve should be used. For TON less than 100 s the
following relationship should be maintained.
Pgm Pgav
Max
( 4.9 )
Rg
G
E
E
K
(a)
(b)
ii.
iii.
iv.
In the pulsed gate current triggering of a thyristor the gate current pulse width should be
larger than the ________________ time of the device.
v.
To prevent unwanted turn ON of a thyristor all spurious noise signals between the gate
and the cathode must be less than the gate ________________ voltage.
Answer: (i) gate; (ii) break down, independent; (iii) increases; (iv) Turn ON; (v) nontrigger.
2) A thyristor has a maximum average gate power dissipation limit of 0.2 watts. It is triggered
with pulsed gate current at a pulse frequency of 10 KHZ and duly ratio of 0.4. Assuming the gate
cathode voltage drop to be 1 volt. Find out the allowable peak gate current magnitude.
Answer: On period of the gate current pulse is
TON = TS =
fs
0.4
sec = 40 s < 100 s.
10 4
Therefore, pulsed gate power dissipation limit Pgm can be used. From Equation 4.9
.5
= 0.5Amps.
I g Max =
1
or Pgm
But Pgm = Ig Vg; Vg = 1V
Peak working reverse voltage (VDWM): It is the maximum reverse voltage (i.e, anode negative
with respect to cathode) that a thyristor can with stand continuously. Normally, it is equal to the
peak negative value of the ac supply voltage.
Peak repetitive reverse voltage (VRRM): It specifies the peak reverse transient voltage that may
occur repeatedly during reverse bias condition of the thyristor at the maximum junction
temperature.
Peak non-repetitive reverse voltage (VRSM): It represents the peak value of the reverse
transient voltage that does not repeat. Its value is about 130% of VRRM. However, VRSM is less
than reverse break down voltage VBRR.
VBRF
VAK
Maximum average current (Iav): It is the maximum allowable average value of the forward
current such that
i.
ii.
Manufacturers usually provide the forward average current derating characteristics which
shows Iav as a function of the case temperature (Tc ) with the current conduction angle as a
parameter. The current wave form is assumed to be formed from a half cycle sine wave of power
frequency as shown in Fig 4.8.
Version 2 EE IIT, Kharagpur 14
Iav
Amps
= 180
120
= 120
100
80
= 60
60
= 30
40
20
0
60
80
100
120
140
TC (C)
Fig. 4.8: Average forward current derating characteristics
Maximum Surge current (ISM): It specifies the maximum allowable non repetitive current the
device can withstand. The device is assumed to be operating under rated blocking voltage,
forward current and junction temperation before the surge current occurs. Following the surge
the device should be disconnected from the circuit and allowed to cool down. Surge currents are
assumed to be sine waves of power frequency with a minimum duration of cycles.
Manufacturers provide at least three different surge current ratings for different durations.
For example
Average power dissipation Pav): Specified as a function of the average forward current (Iav) for
different conduction angles as shown in the figure 4.9. The current wave form is assumed to be
half cycle sine wave (or square wave) for power frequency.
Pav
60
30
90
= 180
iF
t
Iav
Fig. 4.9: Average power dissipation vs average forward current in a thyristor.
( 4.10 )
( 4.11)
Average Gate Power dissipation (PGAR): Average power dissipated in the gate-cathode
junction should not exceed this value for gate current pulses wider than 100 s.
Peak forward gate current (IGRM): The forward gate current should not exceed this limit even
on instantaneous basis.
Exercise 4.3
1)
ii. VRSM rating of a thyristor is greater than the ________________ rating but less than the
________________ rating.
iii. Maximum average current a thristor can carry depends on the ________________ of the
thyristor and the ________________ of the current wave form.
iv. The ISM rating of a thyristor applies to current waveforms of duration ________________
than half cycle of the power frequency where as the i2dt rating applies to current durations
________________ than half cycle of the power frequency.
v. The gate non-trigger voltage specification of a thyristor is useful for avoiding unwanted
turn on of the thyristor due to ________________ voltage signals at the gate.
Answer: (i) switching, lightning; (ii) VRRM, VBRR; (iii) case temperature, conduction
angle; (iv) greater, less; (v) noise
2. A thyristor has a maximum average current rating 1200 Amps for a conduction angle of 180.
Find the corresponding rating for = 60. Assume the current waveforms to be half cycle sine
wave.
Answer: The form factor of half cycle sine waves for a conduction angle is given by
I
F.F = RMS =
Iav
1
2
1
2
Sin d
Sin d
o
- 1 Sin 2
2
1- Cos
2
RMS current rating of the thyristor = 1200
= 1885 Amps.
- 3 = 2.778
4
3
Since RMS current rating should not exceeded
For = 60, F.F = 2
1200
3
4
= 679.00 Amps.
iA
ig
Vi
ION
0.1 ION
vAK
vAK
0.9 VON
VON
td
iA
Expanded scale
0.1 VON
tON
tr
Firing angle
Vi
t
tp
Fig. 4.10: Turn on characteristics of a thyristor.
Fig 4.10 shows the waveforms of the gate current (ig), anode current (iA) and anode cathode
voltage (VAK) in an expanded time scale during Turn on. The reference circuit and the associated
waveforms are shown in the inset. The total switching period being much smaller compared to
the cycle time, iA and VAK before and after switching will appear flat.
As shown in Fig 4.10 there is a transition time tON from forward off state to forward on state.
This transition time is called the thyristor turn of time and can be divided into three separate
intervals namely, (i) delay time (td) (ii) rise time (tr) and (iii) spread time (tp). These times are
shown in Fig 4.10 for a resistive load.
Delay time (td): After switching on the gate current the thyristor will start to conduct over the
portion of the cathode which is closest to the gate. This conducting area starts spreading at a
finite speed until the entire cathode region becomes conductive. Time taken by this process
constitute the turn on delay time of a thyristor. It is measured from the instant of application of
the gate current to the instant when the anode current rises to 10% of its final value (or VAK falls
to 90% of its initial value). Typical value of td is a few micro seconds.
Rise time (tr): For a resistive load, rise time is the time taken by the anode current to rise from
10% of its final value to 90% of its final value. At the same time the voltage VAK falls from 90%
of its initial value to 10% of its initial value. However, current rise and voltage fall
characteristics are strongly influenced by the type of the load. For inductive load the voltage falls
faster than the current. While for a capacitive load VAK falls rapidly in the beginning. However,
as the current increases, rate of change of anode voltage substantially decreases.
If the anode current rises too fast it tends to remain confined in a small area. This can give rise to
local hot spots and damage the device. Therefore, it is necessary to limit the rate of rise of the
di
ON state current A by using an inductor in series with the device. Usual values of maximum
dt
allowable di A is in the range of 20-200 A/s.
dt
Spread time (tp): It is the time taken by the anode current to rise from 90% of its final value to
100%. During this time conduction spreads over the entire cross section of the cathode of the
thyristor. The spreading interval depends on the area of the cathode and on the gate structure of
the thyristor.
vAK
iA
iA
di A
dt
ig
Vi
t
Qrr
Irr
vi
vAK
iA
t
Expanded
scale
Vrr
trr
tq
t
vi
tgr
The anode current becomes zero at time t1 and starts growing in the negative direction with the
same di A till time t2. This negative current removes excess carriers from junctions J1 & J3. At
dt
time t2 excess carriers densities at these junctions are not sufficient to maintain the reverse
current and the anode current starts decreasing. The value of the anode current at time t2 is called
the reverse recovery current (Irr). The reverse anode current reduces to the level of reverse
saturation current by t3. Total charge removed from the junctions between t1 & t3 is called the
reverse recovery charge (Qrr). Fast decaying reverse current during the interval t2 t3 coupled with
the di
limiting inductor may cause a large reverse voltage spike (Vrr) to appear across the
dt
device. This voltage must be limited below the VRRM rating of the device. Up to time t2 the
voltage across the device (VAK) does not change substantially from its on state value. However,
after the reverse recovery time, the thyristor regains reverse blocking capacity and VAK starts
following supply voltage vi. At the end of the reverse recovery period (trr) trapped charges still
exist at the junction J2 which prevents the device from blocking forward voltage just after trr.
These trapped charges are removed only by the process of recombination. The time taken for this
recombination process to complete (between t3 & t4) is called the gate recovery time (tgr). The
time interval tq = trr + tgr is called device turn off time of the thyristor.
No forward voltage should appear across the device before the time tq to avoid its inadvertent
turn on. A circuit designer must provide a time interval tc (tc > tq) during which a reverse voltage
is applied across the device. tc is called the circuit turn off time.
Version 2 EE IIT, Kharagpur 20
The reverse recovery charge Qrr is a function of the peak forward current before turn off and its
di
for
rate of decrease A . Manufacturers usually provide plots of Qrr as a function of di A
dt
dt
different values of peak forward current. They also provide the value of the reverse recovery
current Irr for a given IA and di A . Alternatively Irr can be evaluated from the given Qrr
dt
characteristics following similar relationships as in the case of a diode.
As in the case of a diode the relative magnitudes of the time intervals t1 t2 and t2 t3 depends on
the construction of the thyristor. In normal recovery converter grade thyristor they are almost
equal for a specified forward current and reverse recovery current. However, in a fast recovery
inverter grade thyristor the interval t2 t3 is negligible compared to the interval t1 t2. This helps
reduce the total turn off time tq of the thyristor (and hence allow them to operate at higher
switching frequency). However, large voltage spike due to this snappy recovery will appear
across the device after the device turns off. Typical turn off times of converter and inverter
grade thyristors are in the range of 50-100 s and 5-50 s respectively.
As has been mentioned in the introduction thyristor is the device of choice at the very highest
power levels. At these power levels (several hundreds of megawatts) reliability of the thyristor
power converter is of prime importance. Therefore, suitable protection arrangement must be
made against possible overvoltage, overcurrent and unintended turn on for each thyristor. At the
highest power level (HVDC transmission system) thyristor converters operate from network
voltage levels in excess of several hundreds of kilo volts and conduct several tens of kilo amps
of current. They usually employ a large number of thyristors connected in series parallel
combination. For maximum utilization of the device capacity it is important that each device in
this series parallel combination share the blocking voltage and on state current equally. Special
equalizing circuits are used for this purpose.
Exercise 4.4
1)
ii.
iii.
During rise time the rate of rise of anode current should be limited to avoid creating local
________________.
iv.
A thyristor can be turned off by bringing its anode current below ________________
current and applying a reverse voltage across the device for duration larger than the
________________ time of the device.
v.
vi.
Inverter grade thyristors have ________________ turn off time compared to a converter
grade thyristor.
Answer: (i) positive, forward; (ii) delay, rise, spread; (iii) hot spots (iv) holding, turn off; (v)
magnitude, rate of decrease (vi) faster
2. With reference to Fig 4.10 find expressions for (i) turn on power loss and (ii) conduction
power loss of the thyristor as a function of the firing angle . Neglect turn on delay time and
spread time and assume linear variation of voltage and current during turn on period. Also
assume constant on state voltage VH across the thyristor.
Answer: (i) For a firing angle the forward bias voltage across the thyristor just before turn on
is
VON = 2Vi Sin ; Vi = RMS value of supply voltage.
Current after the thyristor turns on for a resistive load is
I ON =
VON
Vi
Sin
Neglecting delay and spread time and assuming linear variation of voltage and current during
turn on
. where V has been neglected.
Vak = 2 Vi Sin 1 - t
H
t
ON
2 Vi Sin
R
Total switching energy loss
ia =
t ON
t ON
2Vi 2
1 - t
t
Sin 2
dt
t ON t ON
o
o
R
2Vi 2
t
2
Vi 2
=
Sin 2 ON 1 - =
Sin 2 t ON
R
2
3
3R
E ON =
t ON
v ak i a dt =
EON occurs once every cycle. If the supply frequency is f then average turn on power loss is
given by.
PON = E ON f =
Vi 2
Sin 2 t ON f
3R
(ii) If the firing angle is the thyristor conducts for - angle. Instantaneous current through the
device during this period is
2 Vi Sin t
ia = R
<t
R
Where tON & VH have been neglected for simplicity.
total conduction energy loss over one cycle is
Version 2 EE IIT, Kharagpur 22
E C = Vak i a dt =
1
V
H
2 Vi
Sin d =
R
2 Vi VH
(1 + Cos )
R
2 Vi VH
(1 + Cos )
2R
Fuse
i1
Vi
if
220 V
50 HZ
3. In the ideal single phase fully controlled converter T1 & T2 are fired at a firing angle after
the positive going zero crossing of Vi while T3 & T4 are fired angle after the negative going
zero crossing of Vi, If all thyristors have a turn off time of 100 s, find out maximum allowable
value of .
Answer: As T1 & T2 are fired at an angle after positive going zero crossing of Vi, T3 & T4 are
subjected to a negative voltage of Vi. Since this voltage remain negative for a duration (-)
angle
(after
which
Vi
becomes
positive)
for
safe
commutation
0
( - Max) t off Max = 178.2 .
N3 and P2 regions by metallic contact. Similarly MT1 is connected to N2 and P2 regions while
MT2 is connected to N4 and P1 regions.
MT1
N2
N2
MT2
P2
P2
N3
N3
G
P1
N1
MT1
(a)
N1
P2
N4
P1
MT2
(b)
Since a Triac is a bidirectional device and can have its terminals at various combinations of
positive and negative voltages, there are four possible electrode potential combinations as given
below
1. MT2 positive with respect to MT1, G positive with respect to MT1
2. MT2 positive with respect to MT1, G negative with respect to MT1
3. MT2 negative with respect to MT1, G negative with respect to MT1
4. MT2 negative with respect to MT1, G positive with respect to MT1
The triggering sensitivity is highest with the combinations 1 and 3 and are generally used.
However, for bidirectional control and uniforms gate trigger mode sometimes trigger modes 2
and 3 are used. Trigger mode 4 is usually averded. Fig 4.13 (a) and (b) explain the conduction
mechanism of a triac in trigger modes 1 & 3 respectively.
IG
IG
IG
MT1
(-)
N2
MT1
(+)
N3
IG
P2
P2
N1
N1
P1
P1
N4
MT2
(+)
(a)
MT2
(-)
(b)
In trigger mode-1 the gate current flows mainly through the P2 N2 junction like an ordinary
thyristor. When the gate current has injected sufficient charge into P2 layer the triac starts
conducting through the P1 N1 P2 N2 layers like an ordinary thyristor.
In the trigger mode-3 the gate current Ig forward biases the P2 P3 junction and a large number of
electrons are introduced in the P2 region by N3. Finally the structure P2 N1 P1 N4 turns on
completely.
Ig = 0
VBO
From a functional point of view a triac is similar to two thyristors connected in anti parallel.
Therefore, it is expected that the V-I characteristics of Triac in the 1st and 3rd quadrant of the V-I
plane will be similar to the forward characteristics of a thyristors. As shown in Fig. 4.14, with no
signal to the gate the triac will block both half cycle of the applied ac voltage provided its peak
value is lower than the break over voltage (VBO) of the device. However, the turning on of the
triac can be controlled by applying the gate trigger pulse at the desired instance. Mode-1
triggering is used in the first quadrant where as Mode-3 triggering is used in the third quadrant.
As such, most of the thyristor characteristics apply to the triac (ie, latching and holding current).
However, in a triac the two conducting paths (from MT1 to MT2 or from MT1 to MT1) interact
with each other in the structure of the triac. Therefore, the voltage, current and frequency ratings
of triacs are considerably lower than thyristors. At present triacs with voltage and current ratings
of 1200V and 300A (rms) are available. Triacs also have a larger on state voltage drop compared
to a thyristor. Manufacturers usually specify characteristics curves relating rms device current
and maximum allowable case temperature as shown in Fig 4.15. Curves relating the device
dissipation and RMS on state current are also provided for different conduction angles.
200
150
100
For all conduction angles
50
0
20
40
60
80
100
120
LOAD
R1
R2
D1
V1
C
C1
In this circuit as Vi increases voltage across C1 increases due to current flowing through load, R1,
R2 and C1. The voltage drop across diac D1 increases until it reaches its break over point. As D1
conducts a large current pulse is injected into the gate of the triac. By varying R2 the firing can
be controlled from zero to virtually 100%.
Exercise 4.5
1)
ii.
iii.
The gate sensitivity of a triac is maximum when the gate is ________________ with
respect to MT1 while MT2 is positive with respect to MT1 or the gate is
________________ with respect to MT1 while MT2 is negative with respect to MT1
iv.
v.
vi.
vii.
dt
across triacs.
viii.
For clean turn ON of a triac the ________________ of the gate current pulse should be
as ________________ as possible.
Answer: (i) bidirectional; (ii) anti parallel; (iii) positive, negative; (iv) first, third; (v) first,
positive, third, negative (vi) lower, interaction; (vii) R-C shubbers; (viii) rise time,
small.
References
1. Dr. P.C. Sen, Power Electronics; Tata McGrow Hill Publishing Company Limited;
New Delhi.
2. Dr. P.S. Bimbhra, Power Electronics Khanna Publishers
Lesson Summary
The three terminals of a thyristor are called the anode, the cathode and the gate.
A thyristor can be turned on by increasing the voltage of the anode with respect to the
cathode beyond a specified voltage called the forward break over voltage.
A thyristor can also be turned on by injecting a current pulse into the gate terminal when
the anode voltage is positive with respect to the cathode. This is called gate triggering.
A thyristor can block voltage of both polarity but conducts current only from anode to
cathode.
After a thyristor turns on the gate looses control. It can be turned off only by bringing the
anode current below holding current.
After turn on the voltage across the thyristor drops to a very low value (around 1 volt). In
the reverse direction a thyristor blocks voltage up to reverse break down voltage.
A thyristor has a very low conduction voltage drop but large switching times. For this
reason thyristors are preferred for high power, low frequency line commutated
application.
A thyristor is turned off by bringing the anode current below holding current and
simultaneously applying a negative voltage (cathode positive with respect to anode) for a
minimum time called turn off time.
A triac is functionally equivalent to two anti parallel connected thyristors. It can block
voltages in both directions and conduct current in both directions.
A triac has three terminals like a thyristor. It can be turned on in either half cycle by
either a positive on a negative current pulse at the gate terminal.
Triacs are extensively used at power frequency ac load (eg heater, light, motors) control
applications.
1. Explain the effect of increasing the magnitude of the gate current and junction
temperature on (i) forward and reverse break down voltages, (ii) forward and reverse
leakage currents.
Th
15 V
N1 N2
iB
2. The thyristor Th is triggered using the pulse transformer shown in figure. The pulse
transformer operates at 10 KHZ with a duty cycle of 40%. The thyristor has maximum
average gate power dissipation limit of 0.5 watts and a maximum allow able gate voltage
limit of 10 volts. Assuming ideal pulse transformer, find out the turns ratio N1/N2 and the
value of R.
Fuse
i1
Vi
if
220 V
50 HZ
3. A thyristor full bridge converter is used to drive a dc motor as shown in the figure. The
thyristors are fired at a firing angle = 0 when motor runs at rated speed. The motor has
on armature resistance of 0.2 and negligible armature inductance. Find out the peak
surge current rating of the thyristors such that they are not damaged due to sudden loss of
field excitation to the motor. The protective fuse in series with the motor is designed to
disconnect the motor within 1 cycle of fault. Find out the i 2 dt rating of the
2
thyristors.
4. Why is it necessary to maximize the peripheral contact area of the gate and the cathode
regions? A thyristor used to control the voltage applied to a load resistance from a 220v,
Version 2 EE IIT, Kharagpur 33
di a
dt
di a
dt
200V
THA
20 A
200V
1.
i.
ii.
Forward break down voltage reduces with increasing gate current. It increases with
junction temperature up to certain value of the junction temperature and then falls rapidly
with any further increase in temperature.
Reverse break down voltage is independent of the gate current magnitude but decreases
with increasing junction temperature.
Forward leakage current is independent of the gate current magnitude but increases with
junction temperature.
Reverse leakage current increases with both the junction temperature and the magnitude
of the gate current.
THM
200V
THA
20 A
200V
2. Figure shows the equivalent gate drive circuit of the thyristor. For this circuit one can write
E = R i g + Vg OR Vg = E - R i g
The diode D clamps the gate voltage to zero when E goes negative.
Now for ig = O,
But E =
N2
Since Vg
Vg = E.
N1
15
N2
N1
Max
= 15
= 10 v
10
E = 10 v
= 1.5
Pav
0.2
Max
=
= 0.5 watts
0.4
For maximum utilization of the gate power dissipation limit the gate load line ie Vg = E igR =
10 igR should be tangent to the maximum power dissipation curve Vg ig = 0.5
Vg i g
Max
Vgo = 10 - i go R
Vgo i go = 0.5
i go 2 R - 10 i go + 0.5 = 0
-R =
R =
i go 2
dv g
- vg
v
=
= - go
di g ( vgo,igo )
i g ( vgo,igo )
i go
v go
v i
0.5
= go 2go = 2
i go
i go
i go
0.5
- 10i go + 0.5 = 0
i go 2
R = 0.5
i go
or
10i go = 1
or i go = 0.1
0.5
= 50
.01
Back emf.
Va
t
ia
(normal)
t
ia
(with field loss)
t
3. Figure shows the armature voltage (firm line) and armature current of the motor under normal
operating condition at rated speed. If there is a sudden loss of field excitation back emf will
become zero and armature current will be limited solely by the armature resistance.
220 2
The peak magnitude of the fault current will be
= 1556(Amps) .
.2
It the thyristors have to survive this fault at least for 1 cycle (after which the fuse blows) IsM >
2
1556 Amps.
The fuse blows within 1
10-2
2
i dt =
(1556 )
10-2
[1 -
Cos 200 t ] dt
2
= 1 10 -2 (1556 ) = 1.21 10 4 A 2 Sec
2
4. At the beginning of the turn on process the thyristor starts conducting through the area
adjacent to the gate. This area spreads at a finite speed. However, if rate of increase of anode
current is lager than the rate of increase of the current conduction are, the current density
increases with time. This may lead to thyristor failure due to excessive local heating. However, if
the contact area between the gate and the cathode is large a thyristor will be able to handle a
di
relatively large a without being damaged.
dt
di a
The maximum
L
Since
di a
dt
Max
dt
di a
=
dt
2 220 Sin 90 0
= 50 10 6 A Sec
min
2 220
= 6.22 10 -6 H = 6.22 H
di a
dt
Max
VC
toff
vTHM
200 V
dv / dt
iC
20 Amps.
t
5. As soon as THA is turned on the load current transfer from THM to C. the voltage across
THM is the negative of the capacitance voltage. Figure shows the waveforms of voltage across
the capacitor (vc), voltage across the main thyristor (VTHM) and the capacitor current ic. From
dv
i
= c
figure
c
dt
dv
= 500 v s
Now ic = 20 Amps &
dt Max
Min
ic
dv
dt
=
Max
20
-8
F = 0.04 F
6 = 4 10
50010
The circuit turn off time is the time taken by the capacitor voltage to reach zero from an initial
value of 200v. This time must be greater than the turn off time of the device.
dv c
= i c = 20
dt
20 t
v c =
c
Now C
v = 200 - 0 = 200
t = t off
20 50 10 -6
C
20 50 10 -6
C =
= 5 F
200
200 =
For safe commutation of THM the higher value of C must the chosen
the required value of C = 5 F.