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[Nov-13

]
[EUREE-304A]

B.Tech. Degree Examination
Electrical & Electronics Engineering
III SEMESTER
ELECTRONICS-I
(Effective from the admitted batch 2012–13)
Time: 3 Hours
Max.Marks: 60
-----------------------------------------------------------------------------------------------------Instructions: Each Unit carries 12 marks.
Answer all units choosing one question from each unit.
All parts of the unit must be answered in one place only.
Figures in the right hand margin indicate marks allotted.
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UNIT-I
1. a) Explain the avalanche breakdown and zener breakdown
b) Explain the principle behind the varactor diode and list out its
applications
OR

6

2. a) List the applications of an LED
b) Explain the principle and working of Photo diode

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6

6

UNIT-II
3. a) Explain the operation parallel positive clipper with an ideal PN
junction diode
b) Sketch the circuit of a double-ended clipper using ideal PN
diodes which limit the output between ± 10V

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6

OR
4. a) Sketch the circuit of a bridge rectifier and explain its operation
b) Explain the operation of series positive clipper with an ideal PN
junction diode

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6

For circuit V CC =12V. R B =150 KΩ R C =2 KΩ.R B and R C in series with the emitter. Then (i) determine whether transistor is in active region or in saturation region (ii) calculate the collector voltage (iii) what is the minimum value of h FE that will change the state of operation R R R R R R R R R R R R R R R R R R 12 OR 6. VCC=9V. A n-p-n germanium transistor is connected in common emitter configuration with resistors R E . Derive the CE h-parameters h re and h ie in terms of the CB h-parameters OR R R R R 12 8. If h FE =75. V bb =9V. R B =250 KΩ R C =2 KΩ. R E =1 KΩ. a) Draw and explain the characteristics of a common emitter mode for an NPN transistor b) Calculate the minimum and maximum values of I C and V CE for the base bias when h FE(min) =50 and h FE(max) =60.UNIT-III 5. a) Why N-channel MOSFET’s are preferred over P-channel MOSFET’s b) Explain how a field affect transistor can act like a Voltage Variable Resistor ‘VVR’ 6 6 [05/III S/113] . base and collector respectively. Assume silicon transistor R R R R R R R R R R R 6 R R R 6 UNIT-IV 7. a) Define (i) transconductance gm (ii) drain resistance r d (iii) amplification factor µ of a FET b) Write all the applications of JFET R R 6 6 OR 10. a) Explain the effect of coupling capacitor C cc on low frequency response b) Explain the Millers theorem and its dual R R 6 6 UNIT-V 9.