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    38 views371 pages

    MicroElectronicsTransistorsIcDataBook PDF

    Uploaded by

    Coşkun Turhan Özbilen

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 371
    Since 1964 Micro Electronics Ltd. has been an independent manufacturer supplying more than 4000 types of solid-state devices. This databook contains the information of 560 master types only. Should you require a device not included, or a particular one designed to your own specifications, please contact M.E.L. regional sales offices and distributors. — CONTENTS — * APPLICATIONS OF NON-REGISTERED TYPES * DEVICE SELECTION GUIDE “DATASHEETS: BC MEU BD MH BF ML cL MPS cx MsB D PN EN RN FPT s km 2N LN 2SA 2sB 2sc 2sD * MECHANICAL OUTLINES APPLICATIONS OF NON-REGISTERED TYPES APPLICATIONS REFERENCE DATA SHEETS | APPLICATIONS REFERENCE DATA SHEETS MULTIBAND RADIO. ....0000- KM ype (GERMANIUM REPLACEMENT.....osb492 PORTABLE TV expe 27 Mite LOW POWER oo. MP5 8000 AUDIO AMPLIFIER PHOTO DETECTOR Low Gein 20V) so KMBOL * WL soya -. MEL ign Gain 20¥) ss KMBONE hima snes PPTHOD Low Wie 28¥) rns ENDONE WL SSMA on sos MELA Dive OAAIOV scrim €XSOE * BUR ASMA Penne CLIBB OSAMOV oss CXIOE * Seon Chip ss suo saseov.. : cx + NIGOV srasnsnninnines CLS AAMROV orssssssunininns MHEOE * | TRIGGERING & TIMING Output 0 ~1W sss CLOSE * Sermiaa pe evn LEAAW soscsnnnnnnnnnnnn CLE * ‘terminal ye Massa PW cocoons MMBND * wewasw - maiss00 HIGH VOLTAGE 30 up cxrosa o1acros) oxr0s oa ¢r0220) sons M204 2400220) vereronennonenns CRT + Av sutble fr medium speed svitching sa ¢ro220) son R708 nd univers applet INTERGRATED CIRCUIT Digit Alam Cloth eens MBBOO9 LOW VCE(et) @ 14 ... cuss Preciion Tier seneos MLSS ist Diner M1060 Voting Reqltor wca00s DARLINGTON AMPLIFIER... MF5.A13 Ve Converter uosoo BLINKING TOY KIT ..cconsnns D201020 NOTE: For Miniature Transistors, soe BC146, BC200. For N-Channel JFETs, see 23823, For Rectifiers and LEDs, see individual catalogues. DEVICE SELECTION GUIDE ae Vceo, HFE 7 RRAF GENERAL PURPOSE AMPLIFIERS: HIGH wom) —\ * fowatisiona] AND MEDIUMSPEcO swircHes | VOLTAGE — Z z 8) 212/8) 8) sell [sets | esa cao Sate eer iss ato dialtone Fey tetstersane pugettaue ee so] 0] ge) ermousr 100 A fewer eo ten so] 90d os) tomcat Een or 62] 60} ns| -zotoon “Sates ‘© Pulse Test 1 Pulse Width=0,3nS, Duty Cycle=l% BC160 BC161 SWITCHING TIME TEST crACUTT (ton, tof$! e a Prot ve T 0, Hye (NORMALIZED) ve Ic Xo Prot Xe 2 ™) 4 1 baa °F 50°-«100 150 200 T (°c) 1 Ypeloat) & var(eat) & Vee ve To ty (ts) roe( set) ie Ton1083" z 10 100 1000 2 10 1001000 ~ Te (ma) To (ma) 1.78,08108/3 BC177,8,9 BC204,5,6 BC257,8,9 BC307,8,9 BC320,1,2 PNP SILICON AF SMALL SIGNAL TRANSISTORS ——S— eee rrr ee ‘THE ABOVE TYPES ARE PHP SILICON PLANAR EPITAXIAL TRANSISTORS YOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIREOT COUPLED CIRCUITS. BCLTT, 8, 9 are complenentary to 36107, 8, 9 6204, 5, 6 are complenentary to BC207, 8, 9 0251, 8, 9 are conplenentary to BC16T, 8, 9 BOHOT, 8, 9 axe conplesentary to 30257, 6, 9 30520, 1, 2 are complementary to BC31T7, 8, 9 mo-18 70-106 0.928 wo.s2r 10-924 casi csr = om BC 20177849 204,556 BOPSTsB,9 —90507,8,9 —0320,242 ABSOLUTE MARI RATINGS mere | -vopo | -voss | -vor0 | -vem | -to(0) | Ptr « | %» Tore om [om | o | wm | ew | a Barr so [5 | as 5 | 200 300 pars x | 30 | 25 5 | 100 300 | -55 to a75ee] pag 3 | 2 | 2 5 | 100 300 e204 50 “6 5 | 10 300 3205 2 20 5 | 10 300 | 55 t0 125°¢| 10206 % 2 5 | 100 300 30257 wm | 0 | a 5 | 100 300 20258 ey |» | 3 5 | 100 309 | -55 to 150% 30259 & |e | 3 | 300 500 30307 so | 50 | as 5 | 100 300 30508 x0 | 50 | 5 | 100 300 | 55 to 150° pe09 2 | a | 2 5 | 10 00 30320 so 4 6 | 150 x10 pox2 4% 30 5 | 150 wo | -55 +0 150% 0322 30 20 5 | 150 no. ‘+ Total Power Dissipation @ Ta< 25°C BC177,8,9 BC204,5,6 BC257,8,9 BC307,8,9 BC320,1,2 ELBCTRICAL CHARACTERISTICS (TAs25°C unless otherwise noted) PARAMETER seo, | max ove wax [unre] test conprzzons [=tiector-tase Breaklowa Woltase _[-a¥es0 | | V_| sola to lcoltector-Baitter Breakdowa Voltage |-tvon0 © [fete 1 =Fowtah 1-0 fsivterctase Bresiiom Toltee [ome | | 1 | stetp te [Geltector Gator? current a ‘BCLTT, 178, 179 15 | nA | Vor-Vozs WpeeO 20257, 258, 259) only TP HA | VorVoes 86307, 308, 309 Tarl2500_ lcoltestor cutort current “Teno 50 | oa | -vopnasy 1g-0 6204 only, 3] pe | svoma5v Te-0 mAc65ec ~reR 50 [ea | -vope2ov_1p20 0205, 206 only "pi =¥oa=207 18-0 mro5e0 “Tem 30 [aa oy 20520, $21, 522 only 1S] pe 10 [Collector-Bnitter Saturation Voltage |-VcR(sat)* v_ | -to-1008 -1300.5aA 1 types 0.25 | ¥_| -tee2008n -r5-5an [Coltector-teivver Knee Voltage “rome Barr be 29 omy 0.3 0.6 |v | -t¢et0nayrpevatue at 30307, 308, 509 waien -I¢elian -Voge1¥ Haae-Baitver Saturation Voltage “War(eat)* ore _|v_| -to2004 1940.54 1 types 0.92 V | =Tc=100mA -Ip=SmA fpanenitter Voltage al woe [van ® [006 0,65 0.75] [-ton2ma -von-5v 30520, 521, 522 only [Yan * Oo? 0-17] ¥_| -To-10an -VoR-SY [Garrent Cain-Bandwiath Profuct Te 720 ‘Wis |-ToelOma-WoE5Y [eolTectar-Bane Capacitance cy “euler iw yee 19 2] og | eels Bee =| 30507, 308,309 or 30320, 321, 322 + [or otee Figure ne ~Te=0.28k TOES Be17T, 178 ro |as_|ige2en fates ‘pe204, 205; 10 [ap ar-20082 Beo5T, 258 30 [as Bo90T, 308 io[a 00 [as * Pulse Test + Pulse width-0.3a5, Duty Cyclenlx Mote 1 + equal to the value of absolute maximum ratings. BC177,8,9 BC204,5,6 BC257,8,9 BC307,8,9 BC320,1,2 PARAMETER srwmot | MIN YP wax [onra] TEST CONDITIONS Toles Figure F ~igs0,2an wei 12 4 fas} we tba” 706 2608 30259 } onty “io-0.2mk_—YoR-5Y te 2.2 4 | ap | Roa2kn £950Me-25KHS DsCe CURRENT GAIN (RFE) @ -Yome5Y__TAn25°C [2c177 204,257,307, 3200177, 204,257 307 ,320] 20177 ,204,257, 307, 320] ‘at-Ic_ |30178,205,258, 308, 321 }90178, 205,258, 308, 321| BC178, 205,258, 308, 321/c178,205,258,308, 321 (raresa)) 301794206 259, 309, 322 |80179, 2062595309, 322 ‘re GROUP VI ‘rE GROUP 4 re GROUP 3 ‘BYE GROUP ¢ row vax | vn ea | ee a |e tae ee ema oan 70 ino 20 330 aaa _[ 70110340 | mo_170 20 | 000 50050 | 420520” moo 30008 0 20 140 240 = PARMMETERS @ Vee=8V. fig . 0 © 1m 10 ar 1 0 Ta @c) slg (ma) EQUIVALENT NOISE VOLTAGE AT BASE BROAD BAND NOISE FicuRE _ wecouAEeTOn connie vs COLLECTOR cunne me THM Tr we WT TpecesT} overs ov) noe ‘ero-sons | 8) 1 ET 3-15 os ff 3 Soar ng tha 0 ax val 008 BC559, BC559, ° 30560 30560| 10 100 1000 1000 mic Gad sc uA) 2,78.04308/04203, BC727 BC728 PNP SILICON AF MEDIUM POWER TRANSISTORS ‘THE 20727, 30726 ARE PNP SILICON PLANAR (CASE 10-924 EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS POR UNIVERSAL APPLICATIONS. THE BC727, 30728 ARE COM- COMPLEMENTARY 70 THE NPN TYPE BCT37, 20758 RESPECTIVELY. me ATSOUUTE NARDIN AmTNCS mere mer28 Coteotor-Bane Voltage “exo sor 307 Coltector-Haitter Vol tage “Yee soy sy Buitter-Base Voltage "E20 ov Collector Current “to 154 Collector Peak Current (t<10m3) lon 2058 ‘Total Power Dissipation (@ Tp < 25°C) Prot LW (@ 14.625°°) 62504 Operating Junction & Stoarage Teaperatare Sy Tats 755 to 150% ‘TENT RESISTANCE motion to cane O40 25°C max. Sunetion to Ambient Oe 200% /¥ max. Prot vay 20 tot_va_ Th 3100-150 200 T (ec) “le (ws) BC727 BC728 LECTRICAL CHARACTERISTICS (TA-25°C_unless otherwise noted) aR OER ee ee cotnector-beve Beatiown Yeltage | -RYemo | 50 0 v | oom tro ecttector-taitter Bresitim | tvepg «| 40 25 v | tonto 1m Teltege es 5 v | trom 3-0 cortector cutee current “10 100 aa | -Yepyor 10 noo | aa | “repesv tno lnttter enters current 100 100 | na| tenes re-0 oorrector-meter saturation on cot |v | -teesooma -1aepoul Yeltage er Saturation Veltage Le a2 |x | -tesgoou rosso [eee X5 a5 | ¥ | Hee ay b.c. curcent Gain mes | 6s] 6 ow] | -rortoons -romv roxy 10 & res 160 reap 16 ao 250 fi00 230 Group 25 160 400 160 400, Group 40 ao So fee oe sn oroupe | te + | 63 6 “toesoonh -topa 3 % “eer loursont cain-aandwistn rroauct | tp | 40120 | 40.120 | md -toesond -tersov ollector-Base Capacitance Cob 17 20 17 20 | pF] -YoRelOV I-0 rma Pulse Tost + Pula Width=0.5n8, Duty Cycleelf Yox(sat) & VeE(est) ve Tc 25°¢| Te*10r5| Pulse ton 10 109-1000, To (wa) Te (at) 2.78.08108 BC737 BC738 NPN SILICON AF MEDIUM POWER TRANSISTORS ‘THE 20757, 30738 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS YOR USE IN AP DRIVER AND OUTPUT STAGES, AS VELL AS POR UNIVERSAL APPLICATIONS. THE 30737, 30738 ARE COM- YUEMERTART 10 THE PRP TYPE 30727, 30728 ‘RESPECTIVELY. ADSOUTE MUNG RATIOS Collector-Base Voltage Collsctor-Rastter Yoltase ‘Enitter-Base Voltage collector Current Cotlector Peak Current (+ <10as) ‘Total Power Dissipation (@ T¢<25°C) (e m<25%) Operating Junction & Storage Texperature ‘THEOL RESISTANCE Jumotion to Case Junction to Ambient eo Prot vs %] 13 Ptot “ 1. go a! Ke 0.5 Sea Nee 30 300 150.200 % (°c) ero Yom 10 Tom Ty Tate Oe Oe. Te (ma) BC737 BC738 ELECTRICAL CEARACTERISTICS (TAn25CC_unless otherwise noted 3737 30758 are somet | wel ges peo] Bor aos JCottector-base Breakdown Voltage) B¥cnq | 50 0 v | tor0.t94 tro lecitector-Baitter Breaktom | LYop «| 40 2 ¥ | test0ea tp-0 Voltage Jmattter-Base Breaktovn Voltage | BYgp | 5 5 Vv | teO.1aa 10-0 [corrector Cutoff Current Te30 100 na] vepsdor TBO 100 | na| vope25v T5-0 fmrttter cutort current 120 200 300 | na! vanes 1e-0 lcottector-snitter Saturation — | Yor(a or 0.7 | v | x¢+s00ma 15+Somu] Voltage Bene-Rattter Saturation Voltage | Tae 2 1.2] ¥ | ro+5004 p50 “3 23 |v | Yolk TOdk D.C. current Gain ee | 6 60] 6 630 Igrl0Oak YeERIY Group 10 6 160] 63 160 Group 16 100 250/100 250 Group 25, 360 400/160 400 Group 40 250 630/250 630 Groupe elles g o me | 8 et cesiy Jourrent Cain-Bandvidth Product | fp 40150 | 40150 asia} te=S0mh YoRAIOF Jcotrector-Base Capacitance coe 12 20] 12 20| oe] Yepeiov Teo folie * Pulse Test 1 Pulse WidtheO.3a3, Duty Cycleel¢ Vor(ant) & Ys ve fr ve f, 2.0 TeBleat) & YaE(ent) ve to = fe B25 oes) T T4225 Hit—To.10%3 faaes ert 0.3 HYcE(e To 100-1000 Te (aa) 21.78.8104 BD220 BD221 BD222 NPN SILICON SINGLE DIFFUSED MESA POWER TRANSISTORS ‘THE BD 220, BD 221 AND BD 202 ARE NPN Case 10-2208 SILICON SINGLE DIFFUSED MESA POI ‘TRANSISTORS DESIGNED FOR LOW SPEED SWITCHING AND AUDIO AMPLIFIER APPLICATIONS. THEY FEATURE LARGE SAFE OPERATING AREA, BCE ABSOLUTE MAKDEN RATINGS mo me moe Collector-Base Voltage Vopo sy YOY Collector-taitter Voltage Vero tov kor ov BaitterBase Voltage Yeo hf 2 Ee Cellector Current Ie uo Base Current Is Bn Total Power Bissipation @ To<25° Peet soe @ Tacaste 1.84 Suction Temperature 5 150°0 Storage Temperature Range Tate =55 to 50% ‘TEAL _RESISTANE Sanction to Case 3.5% max. Senction to Anbient 7%C/i max. 0 Hye ws Ic e Yor-4¥] 40 Le Pues eet a0 Bg 10° 0 ‘mp 228 ‘BD 221 CF ‘BD 220 5 ; 0 aan 30100 “ocr Od 0 ven) Tea) BD220 BD221 BD222 BE BB BS e r BRE EE A 8 g t Batter Cutoft Current |Dese-Duitter Voltage i Icollector-Baitter Saturati JD.c. Current Gain BB BES 8 REE BES t lourrent Gain-Bandvidth profuct fy ‘| Pulse Test + Pulee Width-0.3aS, Duty Cyclen]f Tet copirios | TsO. T= Yee041A Bygnl00n TeeGelA Veal Sv VogtFOV Ryya1002. Yogr9OY Myyrt000. ‘Te=150°C Veer VBL. Varo VEB1.5 Voe-65V Vepe1.5¥ Vome35¥_ Wza-1.5¥ ‘Toe150°¢ Yepe7Y Ign Vepe5y — Ige0 Tpe0.5A VogmbV Tor tA Vorehv Tgel.5A Vog=t¥ BEBE <<< pp Tge0.5A Tpe0.054 TROL A Howl .SA TpH0.154 320 Tor0.5A YoreAY 120 Ie Ta Wea 80 To1s5A YorAv Vvorsv 015 & a 12-TTMA BD239 BD239A BD239B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS THE BD 259, HD 259k AND BD 2598 ARE NPN CASE 70-2203 SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED PUR SWITCHING, DIVER AND OURPUT STAGES IN AUDIO AMPLIFIES. THE BD 259, ‘BD 259A AND BD 259B ANE COMPLIMENTARY 70 ‘BO 240, BD 240A AND BD 240 RESTECTIVELY. . BCE ABSOLUTE KAKDOM Bas, map map wo CoLlecteraitter Voltage with yeslOoa Tom ix er gor with base open Vero Aor oy eov BaLtter-Base Voltage a 3 Collector Current ie 2 Base Crrent Pe rn ‘Total Power Dissipation (x25°c) Pot sow Junction Temperature yy 150°C ‘Storage Temperature Range Tate BH to +150°C ‘Tamu estore Junction te Case % AlTC/w axe Mee 10 SAE OPEURIMG AREA (D-C-) 225°C 3 3 1 2 0.3, 44 You(v) LECTRICAL CHARACTERISTICS BD239 BD239A BD239B (1229°C tees othervise noted) PATE sooo, [wm vax Tone [ rest carta: Cottector-aaitter Breaidiown Voltage + with extornal barerenttter resistence] iggy * | Tee Foak Byge00 5. BD 2398 7m v ‘BD 2398 x” with dase Topo * oak, oe ‘BD 239 ced wo v re we ‘BD 2394 6 v 3 2595 ® cottector cutoff current Toxo 259, BD 250 3 | mt | y, me 93 | a | Yaa Be eonecteroxtett current | Teas oo | a | vw y, m2 og | | vardey wae 0 2358 ore | ma | vomeeoy viz=o Baitter Cutoft Current Tso a] ma | gesv 10 cotlector-Baitter Saturation Voltage | Yog(gat)|" 7 | V | Tgtth Tyran Base-Baitter Voltage ‘mn? us| ov | talk Yogev Dace Current Gain ty + | 40 TgeB2h Yognh 6 1k Voge Carrent Gain-Bendvidth Product 3 vata | 1-0.24 Yogrto¥ ¥ pulse Test + Pulee Width = 0.3aS, Duty Cycle = 1% Bre wommuazen ** To ie Yee(ast) & "ae v* To 9 TTI wT 225% 1 I alse Tost Q1. 1 tt ad 10 * ou B ou Bo. o. 0. 0.8 1 10 9g 8.01 BD239C through BD242C COMPLEMENTARY SILICON EPITAXIAL BASE AF POWER TRANSISTORS ‘THE BD239C THROUGH BD2420 ARE COMPLEMENTARY ous aoe SILTOON EPITAXIAL BASE AP POWER TRANSISTORS. ‘THEY FEATURE 1OOV MINIMIM COLLECTOR TO EMITTER BREAKDOWN VOLTAGE. TRE HD259C, HD2A1C ARE NPN. ‘TRE 30240C, 302420 ARE PRP. BCE Boe39¢(wPm) —BD2410( PN) ABSOLUTE WUXIMIM RATINGS, #0 pop em entre ene s0240c( PP} :20( PNP Collector-Baitter Voltage (B3E=1000) Yor sv 157 Collector-Bat tter Voltage (18-0) You 00¥ 1007 Mattter-Base Yoltage E90 ” ” Collector current Ie a 3A Total Pover Dissipation (¢<25°C) Prot sow 40H (t1< 2500) aw ~ Operating Junction & Storage Teuperature Tyr Tatg 755 to 15000 RESISTANCE Junction to Case Ojo AeDTOC max. 341226/¥ max Junotion to Ambient ja 62. 50C/W max. 62.590) max. Pt % ag SPEOPERATING AEA (040+) 5 THfiaity Heat Sink] renege Bo2enc, 302! 3 Ss [R28 ae we 03: ont ‘200 a tees 9 er a0) 90 ts 308) Yoxv) RLSOTRICAT CHARACTERISTICS _(4x25°0) BD239C through BD242C WEE | mA PARAMETER smmmot | sne4oc | moedze fae] eet comptioss yo “vax | rw tae Collector-suitter Breaktow | Lor «| 125 | 15 v | teesom4 mmp-2009| ‘Voltage Colrector-maitter Breakdown | Leg «| 100 | 100 v | toe5oak tm0 Voltage Collector Cutoff Current te 0.3) 03 |ma] vem6or tp0 Jeotiector cutoff current Tors o.2| 0.2 |an| vei007 vaso miter cutoft current 0 1 2 ]ma| vanesy 10-0 lcortector-maiitter Saturation | Yop(eat]* 07 vy | tots ta-0.24 Voltage a2 fv | Tocsk Tae0.64 Base-Rnitter Voltage vee * Ls | toa vomay ae |v | Iosa Yoav p.c. current Gein e+ | 40 10-0.2h voy 5 25 Tela Vora? 10 To3k YoReY [sect Signal current Gain te 20 Tos0.54 Vogel07 slide current Gain-Bandwidtn Product | tp 3 wis] 1920.24 YoReiov 3 woz] 160.54 _Yop=l07 + Pulse fest + Pulee WidthO.3a5, Duty Cyole-l~ Noa(oat) a “ps ¥* To a Feat a I eet a T=250¢| a f- an2src) Qu 46 ie ie y 1 i ¥ ott 09 Ba Ro ou 0. ie ‘Woe sat) 0.4 @ tomn0T5, 10 Sak Tea) 3.78,87008.08708 ‘TRE BD 240, BD 240A AND BD 2408 ARE PRP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIONED POR SWITCHING, DRIVER ARD OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 240, BD 240A AND BD 2408 ARE COMPLIMENTARY 10 ‘BD 259, BD 239A AND BD 259 RESPECTIVELY. ASOUTTE UCDO RAPTIOS, Collector-Baitter Yoltage with Rap-100.2, with base open, Mat tter-Base Voltage Collector current Base Current ‘Total Pover Dissipation (70< 25%) Junction Teaperature Storage Temperature Range ‘PERDUE RESToTANCE Janetion to Case BD240 BD240A BD240B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS Tots. ee CASE 70-2208 BCE B20 BD 2404 BD 2407 5s¥ Tov gov 45v Gov, to ov 2a as 308 150°C 395 to 150% AelT0¢fa 1° SAFE OPERATING AREA (D.C.) tener E ~You(v) BD240 BD240A BD240B RLACTRICAL CHARACTIRISTICS (FAn25°C unless othervise noted) PARDO smoot, [mx vax | wx | mse conmrrzons Cellectortaitter Breakdown Voltage With external basecenitter resistance |~U¥cm * teas maar 004 m0 Pd Y 30 Dita 2 Y 1 2400 % y With base open mao |-tteno* | 45 vy [-tensomu 0 BD pan 6 y @ 2 80 y Collecter Cutoff Current temo BD 240, BD 240A at | Yersor 190 ‘BD 2h0B ma |-Vour60¥ Ip-0 Collector Cutoff Current ‘BD 2h0 ee ‘BD 2hoa mh |-Voe-60V Ypem0 30 2408 at [rereoy Varo Batter Cutoft Current to a | mt fever tn Collector-taitter Saturation Voltage — |Vor(sat)]+ 0.7 | ¥ [-tgeld ~Ipr0.2 Base-Baitter Voltage vos * 13] ov [tou cmv Dic. Current Gain Bre* | 40 m1ge0.2h -Voretv 3 eu ay corrent Gain-Banividth Product tr 3 via | -to=0.24 -Yop=t0¥ + Pulse Test + Pulee Widtheo.3aS, Duty Oyelenlf Hye nowmaLizep 7? OTT “CT TM 462) | go gos {Th & 0.6 Voreay g [Ill ta-esee! aot ‘Pulee Tost: Fo {it ° oo 1 1 10 = re (a) 12.77.08708 BD241 BD241A BD241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS ‘THE WD 241, HD 242A AND BD 2423 ARE OPH SILICON EPITAXIAL 2ASE POVER TRANSTSTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT ‘STAGES TN AUDIO AMPLIFIERS. THE BD 241, BD 2414 AND HD 2413 ARE COMPLEMENTARY 10 1 242, BD 242A AND 3D 2428 RESPECTIVELY. _SSOLITR RATINGS Collector-Raitter Yoltege(REE+1000) YER collector-Battter Yoltage(B-0) Yorn Rat tter-Base Voltage spo Collector Current te ase Current ry Total Pover Disstpation @ 10.<25°0 Ptot © m< 2500 Junction and Storage Teaperature Tye Tete REWUL RESISTANCE Junetion to Case on Junction to Anbtent On Tc) ‘CASE 10-2208 M2. MRA mLAIB sev Tor gov 451 Gov or ” ” a 408 a +95 to s150°% 3e12°0/¥ max. 62.59C/W max. SAFE OPERATING AREA (0.0) E te=25°C] HLBCTRICAL CHARACTERISTICS (7A+25°C BD241 BD241A BD241B less othervise noted) PROTER SYMBOL | MIN MAX [OWT] TEST CONDITIONS [Collecter-Enitter Bronktomn Voltage | Ica * Tor30mk 13-0 0241 6 v moeda 6 v 02418 ° v Cottector cutort current Teo ‘mDe41, BD241A 0.5] ma | Yope50¥ Tpe0 02818 013) ma | Yop=60¥ p00 Jcotiector Cutoff Current mp241 | Toes 0.2] ma | Yousasv vaso Boda 012] ma | YeR60V VpEH0 wo2aB 0.2] a | You-80¥ Vag-0 Batter Cutoft Current af mk | Yenest 16-0 |Mase-Mai tter Vol tage ae) v | tesa vom Icottector-maitter Saturation Yol tage! 22] v | tos3k tae0.64 lp.c. current Gain 25 IorlA Yor 10 Toe3k Yopd¥ Saat? Signal Current Gein hee 20 Ige0.5A YopelO¥ fale Current Gain-Bandvidth Product fr 3 pate | To-0.5A_ YogelO¥ + Pulse Test + Pulse WidtheO.3n8, Duty CyclenIK, *ye wowutrze ** To (ext) & “ae 7 Yo 10 1 MMT Fa=2590 4 a Pulse Peat a 4 4 Pes ont F ote y, Row a. of Pulse The 0. Ont pag ist Feaent) °F vemeav Orde rosn0r8 8.01 10 8a tO Ye a) 12.77.8708 BD242 BD242A BD242B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS ‘THE 3D 242, HD 2424 AND BD 2423 ARE PHP SILICON EPITAXIAL BASE POVER TRARSISTORS DESIGNED FOR SWITCHING, ORIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE TD 242, 3 242A AND 3D 2428 ARE COMPLEMENTARY 70) ‘BD 241, BD 241A AND HD 2418 RESPROTIVELT. ABSOLDTE Rar Collector-Baitter Voltage (RpE-1000) -VoER Collector-Initter Voltage (13.0) od Baitter-Base Voltage Teo Coltecter Current “Ie Base Current 3 Total Pover Dissipation @ To <250° Prot @ m< 25% Junction and Storage Temperature Ty, Tote Je Jenotion to ambient O50 (caSE 10-2208 BCE 242 mow42a mDZB 55Y TOY Sov 45v Gov ov ov 3A as 4ow a 755 to +1500 3.20¢/ mace 625° max. SAFE OPERATING ARPA (C+) To-25°C| 3 10 0100 ‘ce(v) BD242 BD242A BD242B LBCTRICAL CHARACTERISTICS (7A-25°C unless otherwise noted) PARAMETER swmot | xx wax| ume | tase conrrrors Collector-Enitter Breakdown Voltage FLVCRO* ~Ip=30mA Tg moa’ 4% Y mo2a2a % ¥ 02423 0 7 Collector Cutoff Current e80 abea2,mn2azk 0.5) ma | -vonsor tao ‘BD2428 0.3] ma “Ver-60V Ip-0 Collector Gutoft current m0242 Hoes sa | -Yone45Y varo 024 ma | “vepeeorYaB-0 02428 ma | “rcesor Yageo Beiter Cutoff Current read 2} ma | -rmsv ro0 ane-buitter Voltage vm | 2.8] | -tge34 reese contector-Batttar Saturation Yoltagttee(aat)# 2) ¥ | -toe3h 130.6 2.6. Current Gain ans | 25 “Ige1A Tossa 20 “IO=3A “NRA ‘Small Signal Current Gain hee 20 Ho+0.5k -Togel0¥ flkia current casnepantwiatn rrosot |r| 3 | mas_| -toroesa tensor | + Pulse Tent + Palas Widthn0.3a5, Duty Cyclenlt, "ye nowatzen ¥* To You(sat) a Yap v# to 1g 1 16 Tas id 1 ne Test au 1 H a au A Bo. e oo Bo 0. OA tse teat ° tr Basses onde tostot ¢ Lteeev Sor oa 10 orn ~Te (a) 12.77.0878 BD533 BD535 BD537 NPN SILICON EPITAXIAL BASE POWER TRANSISTORS ‘THE ED 533, ED 535 AND BD 537 ARE NP Ck) STLIGON RPITAKIAL MASE POWER TRARSISTORS DESIGRED YOR SWITCHING, DRIVER AXD OUEPUD ‘STAGES IW AUDIO AMPLIPImRS. THR BD 533, 3D 535 AND 3D 537 ARE COMPLEMERPARY 70 BD 534, HD 536 AND BD 530 RESPECTIVELY, BCE SOLUTE WAXTON RATIGS, 3 5 WT Coltector-Base Voltage Yon 457 6OY Or Collector-Rattter Voltage Yew 457 Gov or Baitter-Base Voltage ” Collector Current a Collector Peak Current (t ¢10m5) eA Bese Current u Total Power Dissipation @ Te<25°C SOW motion Teaperature 350° Storage Temperature Range 55 to +150°C ‘TEEUL RESISTANCE, motion to Case 0 2580/4 max. Junetion to ambient on oc max. SAPE OVERATING AREA (VC.) 2-2 10 Pulao Te Yors2 The2500) 9 oro 2 10 ha) ‘cxtv) BD533 BD535 BD537 musoratoaL, cuamscrmnrsttcs (74=25°C_unlese otherviee noted) PARAMETER SEO, TP wax | UNIT | TEST CONDTETORS (Cotieotor-Base Breakdowns Voltage | BVCRO Yo-O.dwk IO 1m 535 5 v wo 535 6 v m0 537 Cy v Cotiector-Baitter Bresktomn Voltage | ¥cx0* Torl0Oma 13-0 ‘30 535, % v w 535 6 v 3 537 ® v Imattter-Dase Breakdown Voltage V0 Ty-O.tmk 10-0 BD 533, BD 535, 3D 537 5 Y Cottector Cutoff Current Toxo wm 533 200] pa | vor4sv 12-0 3 535 100] pa | voa-6ov Te 3 537 200] pa | Yopp20v te-0 lcotiector Cutott current Tees Yor~45¥ Vax-0 3D 553, 3D 535, 3D 537 100) pa Imastter cutoft current 00] pa | vanes 10-0 lCotector-mnitter Saturation Voltage O27 0.8) ¥ | tor2k Teo.2k oe ¥ | Tos6A Tpe0. 64 Base-Rnitter Voltage vas * 0.92 145] ¥ | tenho? Current Gain Bre + 1m 535 2 (0nd Yor-5¥ 3 535 20 a a m 537 6 3 533 25 To-2h Yor2¥ 535 25 3 557 Bb 221 types 0 To+500ek Yoe-2¥] Current Gain-Bandvisth Product or 3 mis | 1025004 vor-1¥] * Pulae Test + Puls Wiaths0.3a5, Duty Oycleni% 12477-85008 BD534 BD536 BD538 PNP SILICON EPITAXIAL BASE POWER TRANSISTORS ‘THE HD 554, BD 536 AND 3D 538 ARE PRP STLIOON EPITAXIAL BASE FOMER TRANSISTORS DESIGNED YOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE 3D 534, 13 536 AND HD 536 ARE COMPLIMENTARY 10 WD 533, BD 535 AND BD 557 RESPECTIVELY. ABSOLUTE MAKIMOM RATINGS, Collector-Base Voltage Coltector-aitter Voltage Baitter-Base Voltage Collector Current Collector Peak Current (+ <10x8) Bane Current Total Pover Dissipation @ 76625°C Junction Teaperature Storage Teaperature Range THEWUL RESISTANCE Junction to Case Junction to Anbient SAFE OPERATING AREA (0.C-) er25% 10 Fry ma) 30 (100 ‘CASE 70-2208 BCE BD 534 BD 536 BD 536 = mone = reno tae a = x if x A ae a a Peters @jo 2.5°C/W max. O50, Toc max i 1. a re Bo | o Pulse Test aloe en Sor on + 10 Tew) BD534 BD536 BD538 HLDCTRICAL CHARACTERISTICS (TA=25°C_unless otherviee noted) PARAMETER Sremon | REN FYP_wax [UNIT | TEST CONDITIONS Coltector-Base Breakdown Voltage | -BVcBO ~f0-0.18A Ip-0 w 534 ra y 3 536 6 ¥ w 530 ® v lcottector-maitter Breaktomn Voltage | -Lvcp0 * “To-100e4 Tp-0 1m 554 " y w 536 cy y mo 538 % Y lmstter-Dase Breakdown Yoltage TED pOnlak To-0 1D 554, BD 536, 3D 530 5 v lcortector cutott current ~toH0 m 534 100 | ya | -vope4sy 13-0 2 536 100 | pa | -ven-sor eo wo 538 100 | uk | -WeR-007 1-0 lcottector Cutoff current “tors 3 934 300] pa | -voEe4sy vpgeo 3 536 100 | ba m 558 300 | a faitter cutoft current “220 100 | pa | -vemsv 10-0 Collector-Baitter Saturation Voltage] -Toe( 0.3 0.8] ¥ | -tce2k -19-0.28 vy | -tee6x “19-064 Bone-Bnitter Voltage “vee + 0.95165] ¥ | -te-2a -Yome2v D.C. Current Gain m5 | e+ | 20 sIoel0ak -Wen-5Y BD 536 20 m 538 Fey w 534 5 536 25 m0 538 Bb a1 type 40 ~Fo-5000A -¥oe=2¥| Current Gain-Benividth Product fr 3 vas | -10-250a8 -vop-19| * Pulse Teot + Pulee WidtheO.3a5, Duty Cycle-1¢ 12.77.08508 BD633 through BD638 COMPLEMENTARY SILICON EPITAXIAL BASE AF POWER TRANSISTORS ‘Tae 90655 THROVGH 90638 ARE STLTCON EPTTAKIAL eee ASE POVER TRANSISTORS DESIGNED YOR SVTTOHTI, DRIVER AND OUTPUT STAGES TN AUDIO AMPLIFIERS. ‘Tim 30635, 30655, D637 ARE NPN AND ARE COM- ‘FLIMEFTART 0 THE PEP TYPE BD6S4, 30636, D658. BCE ‘BOGS5(NPN) 5D655(NPH) 30651( HR) ARSOUTE MARION ATTICS to segann emrecwrnnnevns SDRACPEE, SOEROCPEE, BawNOCeE, Cotlector-Base Yoltese eB0 4 tov oor Cotlector-Baitter Yol tase vero ar oor cov Maitter-Base Voltage Yano v w ” Collector Current 1 2 2 2 Collector Peak Current Tom 8 3A oa Total Pover Dissipation (7e<25°%C) Prot 308 (tas25e0) ~ Operating Junction & Storage Temperature 13, Tetg -55 to 150% ‘TRL, RESTON ‘Sunotion to Case eo 4.21%C/ max. Tunction to inbtent Om 62.5°0/¥ max Pot = SAFE OFRRATING AREA (DC “0 ‘ Prot a” w) ~ a 1 2 on 10 o ° 10 oy ™ (Pe) Yor (v) LSOTRICAL CHARACTIRISTICS (TAe25°C_unk BD633 through BD638 otherviee noted! “ PARTE eco. | var wax] ware | res oominIon Soleotor Base Breakdown Voltage | Be To-Orink Ted Bie oe » |r B35, 636 & |r ‘BD637, 638 100 v \Collector-Baitter Breakdown Voltage | LYCEO + ‘Ig=30ak Ip-0 ‘BD633, 634 5 v 30635, 636 60 v mT, 60 2 |t aitter-tase Breskiow Yoltage | sven 5 |v | mam ro0 ottector outore current teas ‘BD633, 634 mh | Yors45¥ Vag-0 Bess, oe mt | Wore ero ‘BD637, 636 mh | Vor-1OOV vpE-O Peers ce eee eee y | rota rosa nose-Deitter Ytage wee aaliy 2.0, current Gain rn) orden Yor2v 5 ian oper Current catn-Bantwiath Product | ty 5 | nm | ro-o.24 vorsior * Pulse Test 1 Pulse WidtheO.3aS, Duty Cycle=l% Vee AND Vi Dc. CURRENT GAIN oe AND Vexion) ve COLLECTOR CURRENT om cottecTon cuntent Hee Rint] m ] Tae] gy LY 100 as W. I | | 120 l ae + 0 oa | 1 40) Vog"2V, 0.2 F-Vee (eat) @ ti | Tan25°C! ; ofS its ent ‘or a 7 1001 on 1 10 Towa toa) 2.18.87008.08708 BF158 BF159 BF160 NPN SILICON RF SMALL SIGNAL TRANSISTORS ‘THE BF168, BF1S9, BF160 ARS NPN SILICON eee Pubas BPivaxiat manststons Fon i ‘SUL st@xAl APTLICATIONS. SCE AS B-IP ‘Sousrress ra MSCRIVERS AND THISD ‘Vinee Ty aunArress ITV MICRIVIS., om ASsoumE wuxna arms zie mis iso ctor Base Voltage Yeao ao Coltecter-Reitter Voltage Toxo ia wiv Beiter Saas Veteage tao a io |e Selletor Sept asc ave) e soma ‘Total Power Dissipation (Ta< 25°C) ‘tot 2000 es darate 208/20 above 25°C Operating Junction & Storage Temperature Tj, Tate 65 to 125°C EIBCTRICAL CHARACTERISTICS (TAn25*C_ unless otherwise noted) PARMETER noon [win emp wax] wat | rast Conrtra SoliectorSaee Breaaens Voltogs | meno t-te Teo rise, Bo » 7 zu 3S : |Collector-Beitter Breakdow Voltage | WCEO ‘IoeSad (pulsed) aria, Brio 2 + | ie mise 8 : Riltterave Broce Voltage | ino Teta Toxo Tat ess 2 ‘ Golicter Gatatt Carvent Teno Too) at | Wotan to @| pt | vector tbe 11 pee mt | Yemasr \Collector-Buitter Saturation Voltage | VCE(eat)| ares our 0.6] ¥ | rato tom i Garveat Gain wn, riod | ty | = 70 Teak Yemiot ive Bn erat Venton oarrent Gala Raat Protck miss mise | rr wo | ase | seasan wonton mies oo too | tas | HSL Vos fevack Copactaace wise, wisi | ore 0.8 Toa] | onteh veo-toy um mite ore ie] B [set Weelovecnes Foo Gin wise, wise [ope |p te ea Bie BS [3 [ES Wea cine, Getpt Gondetace wise waiy | Bw awa] wot | Teotat Vea-107 ito fetes Figere AML Spee Lr 2.8 | @ | Wootah Vepior woos reso BF158 BF159 BF160 ‘TYPICAL CHARACTERISTICS AT Tha2i¢ We ve Jo 00 tr 600 (is) 200 ° ° Oren 10 100 On 1 10 100 Ie (ms) Ie (a) Ope ve ft wivs ¢ Toate Too, Vor=10¥ 3,78,31008 ‘THE BF254, BP255 ARE NPN SILICON PLANAR PTTAKIAL TRANSISTORS. THE 37254 18 TRTENDED FOR USE IN AW/PM IP AMPLIFIERS AND YOR INPUT STAGES IN THE SHORT, MEDIUM ABD LONG WAVE BANDS. THE BP255 TS INTENDED POR USE IN PRE-STAGES AND CONVERTER STAGES IN THE VHP BAND. ABSOLUTE KAKINUM RATINGS Collector-Base Voltage Collector-Baitter Voltage Bai tter-Base Voltage Collector Currant ‘Total Pover Dissipation (7A £259) Operating Junction & Storage Temperature Yeo oro Ic Prot T, Tote BF254 BF255 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE 10-928 Hap4 P25, jor ov, 2ov zor ov ov 300k 3000 derate 32¥/°C above 25°C -55 to 12506 HLECMRICAL CHARACTERISTICS _(74=25°C_unleos othervise noted) Voltage jBase-Baittor Voltage vee D.C. Current Gain We Jourrent Gain-Bandvidth Product] fp Hreedback Tine Constant cor HReedback capaci tance ore PRotse Figure ” 0.67 0.74 67 115 20 260 25 40 0.67 o-7 36 67125 200 20 35 0.85 4 PARMOETER smi [rn SSP aux [pak 28 max PE] TEST CONDITIONS Baitter-Bese Broakiom Voltage| Bim | 5 5 Tapa 0-0 [Collector Cutoff Current ‘TcBO 0.1 ‘Vop=30V Ip-0 Collector Cutoff Current ‘Iczo 1 Vor=20V Ip-0 lcottector-mitter Saturation | vox(eat) Tol0eh Toetad a Toelmk vox-107 TosImk Yops10¥ Iorlek YoER10¥ Towlm VoERSY fo51ome Ig-ma_You-10¥ ‘f6450RH Toelmk YoE-10¥ g=100n £=100Ke BF254 BF255 BP254 TYPICAL, y-PARAMETERS AT TA-25°C_Ic~lma YeR-10¥ 2 450s By OSV aya real BRT apn omen muttter by =0.065mT =O)» =90? Oy oP Rpg 5p O-2509F eet fa10. 7s yoda gol Sip Prarl3620 ——GapA8 Sp common maitter ysl Sa Oy» 090? 8, 10° VpqeOeta oy, -220" Gye bP r-10cs e600 Paola |35RU gna omen Base =e 0, 08° oy 46° bye ela = Od. 05 Opole TPP W255 TYPICAL y-PARIMETERS AP _T4o250C Tonina Voul07 asc "0500 asl? prey PYwgeteTHe common Battier My wel =O) On dye 5p 7520 Cage 6 aera 0-6 Piz Parir36a% zat 50 omen Hatter by =2a07 yp Wy, 10° Ypqe0-1a 1-305" Cage) oF 100% ay 308 Pid payee wggetgHT Common Base = byyee Op 05° Oy 140? gel la = Gyr Copel. 159 Breve Ic fy ve Ic Fan25°9] Yea False Tost ih wo, aT 1 10 100 On A 10 100 Te (ma) Te (ma) 2.78.33004 BF257 BF258 BF259 NPN HIGH VOLTAGE VIDEO AMPLIFIERS THE F257, 7258, 37259 ARE HFK SILIOON CASE 70-29 PLAWAR TRANSISTORS DESIGNED OR HIGH ‘OUTAGE VIDEO OUTPUT STAGES IN BLACK- AND-VEITR AND COLOUR "¥-RECEIVERS. crs AOLITE UXT RATIOS, res] Bros resp Collector-Base Yoltage Yexo 1607 2507 3007 Collector-Battter Yoltage Yoro Aor 2503007 Bettter-Base Yoltage a0 ” Collector Current Io r00—4 Total Pover Dissipation @ Tc <25°0 Prot ™ e250 ‘000i Operating Junction & Storage Temperature Ty, Tate -65 to 200% %0 35° max on 2r0c/M mare Foot wT T (9c) Yer (¥) BF257 BF258 BF259 LECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) PARAMEPER semen | eee | ee pax OMIT] TEDT conDrTioRS [Coltector-Base Breakiomn Yoltage| Vey | 160 [250 [300 | ¥ | te~0.1mk THO Corrector-taitter Breakdown — | t¥cm0 + | 160 |250 |300 |v | tontoma 10 Yoltage [taitter-Base Breakdown Yoltage | 370 > ’ 5 |v | apotm too Jcottector Cutoff Current Top0 50 aa | voRel007 Tro 0 ak | Vop=2007 Tr-0 50| ma | Vope2507 Teo fiaitter Cutoff current 20 so] 50] 50] ma | vanes too In.c, Current Gein 2 | | as Toosoma YoEe10¥) (Cottector-Baitter Saturation a a) aly | te-s0ma ro6an Toltage lourrent Gain-bandvidth Product | te so | 0 | 50 | om Yoee207| lcottector-Base Capacitance | ecb 5 5 5| or 0 * Pulas eat 1 Palas Widthe0.3aS, Duty Cyctenig Frg (RORMALIZED) v8 Tp fv Ip 7 4425°o| oe ico lpuise test: 9 0 2 100 10 Te (ma) BF297 BF298 BF299 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ‘THE HF297, 37296, BF299 ARE NPN STLICON PLANAR TRANSISTORS DESIGNED FOR HICH ‘VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CASE 10-92F URACTERISTICS. cc} ABSOLOTE MAXTMOM RATINGS 221 Hae re99. Collector-Base Voltage Yeno 16or 2507 300 Collector-Baitter Yoltase Yor ior 2507 3007 Maitter-Dase Yoltage ‘a0 ” Collector Current Ie 00m Total Pover Dissipation @ 7¢<25°C Poot Low om <25°C 62a Operating Junction & Storage Teaperature 5 & Tat 55 to 150% LBOTRICAL cuaRucTeRISTICS ( "4-25°C unless otherwise noted) are97 | ar29e | “ar299 Panera snemou_| rw iu ax| onze ese conprrzons| [eotiector-Base Breakdown Voltage | B¥oqq — |160 Y [ig-Onlmk Tg-0 cortector-mnitter Breskton Voltage | Lom [160 ¥ fogetoan 10 mat tter-Base Yoltage Mp | 5 ¥ |rpo.ims 10 Cotector Cuteft Current Tero sl ab |reyrtoo 10 ab |oge2007 po a \iggr250¥ Ty fmattter Cutofe Current ta so ak ligp3¥ Tox Jcorrector-saitter Saturation Yoltage| Yox(eat)} | ¥ |rcez0un 19e3eul ane-titter Saturation Voltage | Yax(est)| 0405] ¥ frge30ma 5-5aul D.C. Current Gain ito tg-Sak Yog20¥| 30 150 To-30mA Yop-107| ho lr,-Lo0axvc—-10¥] lourrent Gatn-Pandviath Product ty [50 fx | 50 ate frgeS0md Yoqrt07| lCollector-Base Capacitance cob 5] 3} 5) Br lWops30v 1p-0 =D BF297 BF298 BF299 rer Tyn25°C__unless ot noted) eer SAFE OPERATING AREA (D.C) 2.0 Yor (v) Van(aat) * Yox(sat) ve To ots ‘Tet on. 10100 Te (mt) 1y a Cob ve TR 100} 7; Sea oR Gr) 20] am 12.77.75008 BF336 BF337 BF338 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ‘THE BP356, BPS5T, NP350 ARE NPN SILICON CASE 10-59 ‘PLANAR TRANSISTORS DESIGNED POR R-C-3 AND COLOUR DIFFERENCE OUTPUT CIRCUITS OF COLOUR TELEVISION RECEIVERS. THEY ‘FEATURE HIGH BREAKDOWI VOLTAGE AND CooD FREQUENCY CHARACTERISTICS. cEB ASSOUPTE MAKDON naTTIOS m6 WL we Cotlector-aitter Yoltage(Rm=2k=) Yea 10572507 500 CoLtector-Baittar Voltage (19-0) Yom reo 200r 225 Baitter-Dase Yoltage ‘m0 ” Collector Current te 200m Total Pover Dissipation @ te (259° Prot » om 25% 0m Operating Junction & Storage Teaperature 15 & Totg -65 to 2000 ‘Tal mststarcE Junction to case on 3500/0 max. JInnetion to Anbient on 22000/M na. Pot a 5 4 Peet, Ww? 2| a ° 200 ‘200 ™ (P0) vor (¥) BF336 BF337 BF338 TRLEOCTRICAL CHARACTERISTICS (74+25°C unless otherwise noted) HS | BPSST | BPSIE ‘PARAMETER st | ees | pe ux [wee nax | OTT | TEST conrerons lcottector-Base Broaxiown Voltage| BVepq | 185 | 250 | 300 | ¥ [toe0slma Te-0 lconrector-maitter Breaktomn —|t¥om*| 105 | 250 | 500 | ¥ | Iemma Ragen Yoltage nf<5090 lcorrector-mitter Breakiovn — |ivggoe| 160 | 200 | 225 | ¥ | Iendmk Ta-0 Voltage feaitter-taae Breskiown Voltage |2rm0 | 5 5 5 |v |tmo.1mn ro cortector Outett Current Torr 100 pa | You=1507 Rage] 100 BA | Yo-2007 mania 200] jd | Vor-250¥ Rygelia| Dase-Baitter Voltage vee | 1-2] 202] 2.2] ¥ | tge30mk vox-lO¥ p.c. Current Gain wee | 2 | 2 | 2 Yqr30ah Vos-10¥ lourrent Gain-Bandwidth Product |tp | 50 | 50 | 50 | Mis| Ipn30mk Voyn20¥ [Feedback Capect tance cre 3.5] BP | Tonl0mk Yor=207 £20.55 reedbeck Tike Constant corte’ | 100/100] 200) 38 | 1m30mk Yom20¥ felons + Pulse Teat + Pulee Width-0.3a5, Duty Cyole=l% ‘pe (NORMALIZED) 1 To (as) Te (ma) 32.77.73008, BF368 BF369 NPN SILICON RF SMALL SIGNAL TRANSISTORS ‘case 0-024 ‘THE W368, B360 ARE NPN SILICON PLANAR ‘RPCTAKIAL TRANSISTORS FoR HP-IF SMALL SIGHAL AMPLIFIER AND OSCTLIATOR APPLI- carTONS. ec ABSOUTE MAXDAM RATINGS wee Bre ollector—Base Voltage veo od Collector-taitter Voltage vero wwe Bai tter-ase’ Voltage v0 « a Collector Current Ik S0ah Total Power Dissipation (TA< 25°C) Peet 3100 erate 2.810N/*C above 25% Operating Junction & Storage Temperature 1), Tete 85 te 135°C RUGTRICAL CHARACTERISTICS (TAn25C) 7 = rao PARMIETER MBO Yasoy roe wax [arn Fee” wax | MEF | FEST conDrrECNG| [Cottector-Bese Breakdown wicno | 26 30 Vv [1-014 m0 Voltage JCollector-Baitter Breakiom | Uexo+ | 18 ~» Vv |tceamk Tmo joltage Baitter-Sase Breakdown Voltage] BVEBO | 4 4 Vv |1p0.01m 100 (Collector Cutoft Current exo 100 200] aa |vcBe18¥ Ip0 Collector-Buitter Saturation | Vex(est)| 0.12 0.4 0.1 0.4| ¥ | to=100h peta] joltage Base~Buitter Saturation ‘Vax(eet) 0.84 V | tce10—0d rota] Voltage D.C. Current Gain Wee 38 80 125] 70 110 220 Icatmt_ver=10¥| lCarrent Gain-Bandwidth Prodect| fr 280 400 © | 400 520 calms VeR10¥| Ostput Capacitance Cob 13 7 1.3 1.7/ |[Vepe10¥ Teo | felix lCottector-Hase Time Constant | Certo! ey cy PS [Icetmh Vops¥ £231, 0le * Pulee Test 1 Palas WidtheO, 308, Duty Cycleci$ BF368 BF369 TUPICAL CHARACTERISTICS AT Tha95* Cob & Cre _ve_Vop ipo tai we) BF391 BF392 BF393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS {HE W591, 37992, 19995 ARE NE SILICON case 10-924 PLMAR SRANSTSTORS DESIGNED 7OR YourGs YON ANPLIPTERS 4 TELEVISION ASCKIVERS. THY PRATIRE 200 MINDEN eee I (C00 PERQTERCY CHARACTERIPTICS. E- ASSOLE MUKDAOK nar mg wee wes Cotlector-Base Voltage sor 2307 3007 Coblector-Mettter Yo tage zoor 2507 5007 Battter-Base Toltags oor Collector Current Secu ‘Total Power Dissipation @ Tc <25°% LW ee M< 25% 625 Operating Junction & Storage Temperature 55 to 150° KLBCTRICAL CHARAOTERISTIOS (Tin25°C unless othervise noted) PRAM — ae ees aoe aaa 2] Ree conrezons| oltector-Base reabiow Voltage | B¥G30 poo TW |ipeo.taa to eottector-tattter Breakdown Yeltece | LYem 300 | facet zm0 Imettter-Bese Brearéow Yoltage | 3120 8 |v [rpoaim 30-0 cutscter Cutatt carseat Tao pa Yemreor reo oa sat Yep-2007 am matter Cutoff Current Te ma lYap4v x00 ca} oa) sa |rmer 1000 ootiecter-Baitter Saturétion Yoltags| 2] 2] ale frowzoma xoeom Pase-taitter Saturation Voltage 2] 2] ale |rqeaomn xp-om b,c. current Gate mm | fas fas e-taa verri07] wo |o jo est0an vex-10¥ |Current Cain-Bandwidth Product te Eo 30 0 ‘Mis|To=10mA Yox=207| Peetoack Capect tance ore 2] alae seer BF391 BF392 BF393 YFIOAL CHARACTERIOTICS _(T4e25%> unless othervise noted) Pot ve TA SUPE OPERATING AREA (D.C.) 2.0 1000) Ie 109} (ma) 10] BP591- ‘mP392. ‘sO 30-100 300 ‘Wor (¥) sq _Tamaat) & Yos(ent) vv To To=1OTS Pulse Tost 10 (as) Te (ma) fr we Yo ore _ve_Yop Gr) 1 3 on 2 5 10 10 Yee (v) 12.77.73008 BF494 BF495 NPN SILICON RF SMALL SIGNAL TRANSISTORS {THE HP494, F495 ARE NPN SILICON PLANAR ase 10-928 [EPITAXIAL TRANSISTORS POR RF SMALL SIONAL APPLICATIONS UP 10 100KG2. om ABSOLUTE MAXIMUM RATINGS 3494 P49 Colector-Base Voltage Yer ed Colector-Bnitter Voltage Yoo zor 2or Baitter-pase Voltage v0 Sree se Collector Current tc ok ‘Total Power Dissipation (TA<75°C) Prot one erate 4ai/2 above 75°C Opernting Junction & Storage Teaperatare Ty. Tate 755 40 150% ELECTRICAL CHARACTERISTICS (TA250¢_unleas othervine noted) PARR SMEOE | ser ee ear | an eee max [ORT] TEST CONDITIONS ‘Baittercbase Breakiown Voltage| Bam | 5 5 V | Teigpa Toso collector cutoft current oa oui] pa] veaes0r m0 Collector Cutoff current 2 pa | vo-20r 1p-0 Collector-Buitter Saturation oa oa |v | tostoak trims Toltage Base=Enitter Voltage vB +65 466 .74] .65 .68 .74] V | Iomlma YoE=10V D.c, current Gain Bre | 67.115 220] 36 67 125] | rontma vomiov Jourrent Gain-Bandvieth Produet| fp 260 200 | tua] roetmaYorsio¥ Peedback Capacitance cre 5 18 | oF | rota vopo ; eso oise Figure ” 4 4 [aa] rostaa vomior Rgn008 £=100%| Heixing Mosse Figure 1% 2 an | reetsa vopor g-8308 Folie 1 25 | @3] tostak Yomi07 ge6Ton faite BF494 BF495 ‘3P494 TYPICAL y-PARMMETERS AT TAq25°C Tomt@ VCE-10¥ foes Sy Vfl 2 Orgy gga lComon Eaitter by y=0,055ar —=0)» = 90° 0 0? "2307 lt-20.78 eyOedsa aga] 650 Pale3seo Jcommon Dattter by 91.507 9, “90° yy =20° yys2299 e-toc, ey yale rg SBA egy zaR common Bess = bynes yy a lg Naya la 26.00 eggele 500 R495 TYPICAL y-PARAMETERS aT TA-250¢_Io~imA Yow-10V soa wet pale pale aphige omen Detter pein ge ele tanta Qs3207 Cyto .20-tme Renee eee ete men Bitter eye See Cnr eee coms ea genie pap eat emmen taco = antag ee age cr ae ate Hyg ve Ic fr ve Ic = Ta 160 Pulse Tee i 7 120: 1h a] Ty coe « : Te (ma) Te (ma) 2.718.350 CLOS5 CLO66 COMPLEMENTARY SILICON PLANAR LOW VCEK TRANSISTORS ‘THE C1055 (PNP) AND CLOS6 (NP) ARE PLANAR EPITAXIAL COMPLEMENMRY PATR DESIGNED FOR 1-WATT AUDIO AMPLIFTIR ‘SILICON SPECIALLY oureor AND SWITCHING APPLICATIONS. THEY FEATURE LOW ‘COLLECTOR-IAITTER KNEE VOUTAGE AND GOOD LINE- ARYTY OF D.C. CURRENT GATR. ae APSOLOTE MAKINO RATINGS mrp er nen te Collector-Base Voltage Yor 25" Cotlector-Battter Voltage Yor zor Battter-Dase Yoltase Yen ov Collector Current Te uw Collestor Peak Current (t<50as) Im 165A ‘Total Power Dissipation @ 7c<25°C Pot 1.5 ‘With X-67 Heat Sink @ 7425 800aN Without Heat Sink @ T425°C 6250 Operating Junction & Storage Teaperature Tye Tate 355 to 150°C RLPOMICAL CHARACTERISTICS _(14-25°C_unless othervise noted) PARAMETER snoon [sax orp sax [onme| neon commons [eotiecterBase Breakdova Voltage | BYcs0 | 25 | te-t00p Teo lcotrector-mattter Breaktown Voltage | LYcp + | 20 v | toetoak Teo lcotiector-Baitter Cutott current | Ions 0.5 | pa | Yor-2ov veo Baittor-base Cutoft ourrent 10 2.0] pa | venesv to-0 Jcollector-Baitter Knee Yoltage Yor 0.25.05] ¥ | 19-0.2k tpevalue fet watch 1o~0.224 Yor-i¥ Icollector-Baitter Saturation Yoltese| Yor(sxt)* On 004 | ¥ | Te-0.54 1p-0.054) Base-Rat tter Yoltage Yee 0.07 1.2] ¥ | to-0.54 vort¥ p.c. current Gain (rote) | ui | 50 160 360 To-0.14 Vorsl¥ Eye 20 20 80 Towla Vog=27 current Gatn-Dandwiath Product ft 120 |rme | toesoaa_vos-i0¥ ote 1 BYE] ts classified as follove, Group A+ 50-100 Group Bs 60-160 Group C+ 120-240 Group D + 100-560 + Pulse Test + Pulee Widthe0.%a5, Duty Cyole-If EF CLOSS CLO66 ‘TYPICAL CHARACTERISTICS (725°C unless othervise noted) TOTAL POWER OISIPATION Vag AN Vee at \VeAMBIENT TEMPERATURE sacotLecTon CURRENT TIM ” Pulse Toet Se a NG os ee os | Fe i "Se 02 Nea @16* 1019 . © = Ww etm eq mea folmal ec. cunnent aan CURRENT Gan BaNowioTH PRODUCT vwCOLLECTOR cUNneNT wecOLLECTON CUNRENT THT & well oot TM oo , ‘Pulse Test] 1 7 ae me mek ' © 0 st tg lm tem 1,78,0830¢.83000 CL138 NPN SILICON PHOTO DARLINGTON TRANSISTOR ‘TRE CLI3® 1S AN NPN SILICON PROTO DARLINGTON TRANSISTOR FOR USE IN PROTO DETEWTOR CIRCUITS IN WHICH ‘VERY SENSITIVE LIGH? CURRENT 18 REQUIRED. THE DEVICE 15 SUPPLIED IW SELECTED LIGHT CURRENT GROUPS. ABSOLUTE MAXI RATTNCS, CASE 70-106, “9 Hote 1 The base torainal may be elated froa the internal silicon chip upon request. Gollector-Buitter Voltage Veen ev Bai tter-Collector Voltage ¥p00 ov Collector current Ie 10008 ‘Total Pover Dissipation @ TA <250¢ Prot 300m Operating Junction & Storage Temperature Ty Tete 55 to 100° ELECTRICAL CHARACTERISTICS (TA+250C unless otherviee noted) PARAMETER smoot [Min TP max JONIT] TEST CONDITIONS [Coltector-Bnitter Breakdown Voltage| Lom | 18 35 V | to-l0aa (Pulsed) Tpe0 frat tter-collector Breaktomn Yoltage| 3Vmco* 5 85 v | tp0.ama m0 Joctiector cutoff current Topo * a [pa] vorsv mmo (eDazk Current) lutght current nm | a5 80 Vore37 Re2n/on? Group A 15 25 40 Vou-3¥ H-2av/ca? Group 3 30_50_ 00 |ma| vose3v_He2aw/oa? * Teated in complete darines ‘*# The Light curcent is the collecter to emitter current measured at specified Arradtance (#). amp at 28740K color temperature. ‘The radiation source is an unfiltered tungsten filanent CL138 ‘TYPICAL CHARACTERISTICS AT 402500 car comer cal abana ‘ve COLLECTOR“EMTTTaR VOLTAGE ‘Woos+10¥_ x 7 [ran il Sa ae ase. 1 ol Gass (ma) io ‘Red LED (OUTPUT Cx x tee ze Tum-On Pnen500:5 Tum-O¢F Mine-1 59,8, Light Source is an unfiltered ‘tungsten fLlanent Lemp at 20540R color temperatures rab PP o 5 10 15 20 Vee (¥) 3+ 7804545 CL155 CL166 COMPLEMENTARY SILICON PLANAR LOW VCEK TRANSISTORS ‘THE C1155 (PRP) AND CLA66 (NPR) ARE SILICON ‘PLANAR EPTTAKIAL COMPLENRTARY PATR SPECIALLY To-82A = K~67 HEAT SINK DESIGNED YOR 2-WATP AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS, TRY FEATURE LO @ COLLECTOR-RATOTER KNEE YOLTAGE AND GOOD - es 7 oe T.. APSOLUTE WUXDAMG RATTIGS, erm ween mre a Colleotor-Dase Yoltage Yer yor Collector-Raitter Yoltase Yow ar ‘Euitter-Base Voltage VERO W Collector Current Io 1a Collector Peak Current (t<50es) Ton 262k Total Pover Dissipation @ 7042500 Prot LW With 1-67 Heat Sink © 746250 00a Without Heat Sink © 74«25% 625i Operating Junction & Storage Teaperature 1 Tate “55 to 1500 ELECTRICAL CHARACTERISTICS (Tae25°C_unless otherwise noted) PARINETER srmmot | MIN Trp max [owra] ESP CoNDTTrORS |Coliector-Base Breakiown Voltage BCE Ey V | teet0Qp TeO lCortector-tattter Breakiovn Yoltage | Lica «| 25 ¥ | Toston 130 [Collector Cutoff Current ‘TOES 0.5 | pa | Vom=20V VEm-O lmitter cutofr current Tmo 1.0 | pa | remst 1000 lcottector-maittor Knee Voltage Yor 0.2 0.4 | ¥ | 1¢-0.2k Tpevatue coltector-paitter Saturation Yoltage| Yor(sat)|* 0.25 0.45 ‘at watch 100.224] YerR1Y y | rents y0.24 Jaase-taitter Voltage ‘se * 0.62 1.2 | ¥ | te-0.58 Yo pp.c. current Gain (rote)| nei | 50 160 360 TecOa1k Yogev ae 2+] 30 no Toelh Vor-2v lourrent Gain-Bandwidth Product fy 120 as] toSoma_Vogei0¥ ote + Hyg 1 ie classified as follow. Group A+ 50-100 Group Bs 80-160, Group C + 120-240 Group D + 180-360, 4 Pulse Tent + Pulee Widthe0.3a8, Duty Cyclenl# g ‘TYPICAL CHARACTERISTICS {Tq"26°C UNLESS OTHERWISE NOTED) ‘TOTAL POWER DISSIPATION. CL155 CL166 Vgg AND Vig tat) Yee IT Tt TTT o a A 7 RS a, . Tt T TTT] ty z oe Eth Igtoad teins 1.78,0810¢.81000 CLO55 CLO66 CL155 CL166 APPLICATION NOTE (MEAP 168) LOW VOLTAGE OTL AUDIO AMPLIFIER (2-1-2) toa eur ALL resistances are in ohms. Quiescent current 7 is very stable when Q3 is placed close to Q2. SUPPLY VOLTAGE (Wi CIRCUIT DETAILS yav |v | T.5¥ ov 7.5] Ra sex fark [59x [35K sex [59K [33K Ro 2.2K |2.2K |2.2K [2.4K 2.7K [2.4K | 2.4K RS 590° |390 [350 |220, 240 [270 | 220 Ra Vda lo Jo et | Ose | 0) RS 560 |470 [470 470 [470 |510 |510 | 470 Q1,HPE group ¢ or D {CL166|CL066 |c1L066 |cLO66 |CLO66| 21.166] C1166] CLO6E] CLOGS Q2;HPE group ¢ or D [01155 |CL055 |ci055 [L055 |cL055| cL155| cL155| CLo55| CL055, 10% THD Output + aw [1.1 [o.75w]o.50 [0.250] +190] *1.5¥] 0.9" [0.4m Input Tnpedance 55x [55x [53x [50x [47K [53K [50K [47K [45K Input Seneitivity _[45av [54nv [27a |23n¥_|16aV [35av |aGa¥ | 24nV | 16a¥ THD @ 0.5" Output [0.5% |o.6% [1s [10x | — o.5x lo.7#[1* | — [Frequency Response 422 to 58KHe, ~3aB “TOs to 56Kiz, ~3aB jurrent Drain ‘Ono signal tama |r3ma_|13ma |13ma |13ma Pome | t5m0 | 14nd | 14a © 10% THD output _]230ma |170ma]|140ma |120ma|72mA | 290mA| 255mA] 210mA] 145m, * Output transistors mounted to X-67 heat sink. CLOS5 CLO66 CL155 CL166 USING X-67 HEAT SINK TO ITS FULL ADVANTAGES ‘The X-67 het sink pail desir for he ow Vex rit to perform wo functions 1 Permits 2 vets continsous outbut power inthe amplifier cut shown i at page. 2. Provider exalt eablty of aunt ure wien the Bing waster (0) shar ‘common hast snk with the PNP outot transistor (02). The arangement i shown in the falling dora, CL855 CL866 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS ‘THE C155 (PSP) AND CLA66 (KPH) ARE SILICON ‘PLAMAR EPYTAXTAL TRANSISTORS OP COMPLEMENTARY CHARACTERISTICS. THEY ARE DESIGNED FOR USE IN AP LARGE SIGHAL AMPLIFIERS AND MEDIUM SPEED ‘SWITCHING UP 10 1.54 PEAK CURRENT. ABSOLUTE MAXIMO RATTICGS, ‘woop atm wtmere nine mae Colteotor-Base Voltage vero Collsotor-baitter Voltage Yor Baitter-Base Voltage 720 ” te Tox a3 Collector Current ub Collector Peak Current (+ ©50a8) 1.58 Total Pover Diseipation @ To<2500 Prot 1 With X-67 Heat sink @ 7142590 00a Wo Heat Sink © "<2500 625 Operating Junction & Storage Temperature By, Tate “55 to 150° HLSCTRICAL CRARAOTERISTCS (T4n2500 unless othervise noted) PTR ‘Snot [AGN ov wax [UNrt] TEST CONDITIONS ilector-Base Broakiova Voltage | BYcR0 70 o10OpA Ta-O jMector-Baitter Breaktom Voltage | Lica » | 60 IoelOma —Tp0 corrector cutoft Current oes 05 ‘Yore50v Va=0 luitter cutoff Current Tro 2 YERSY Io0 JCcltector-Baitter mee Voltage You To~0.24,Tpevalue sat which To00, Yor ctaeotor-aitter saturation Teltage| Ten(eet)} 0:25 045 Dane-Baitter Voltage Yee « 0.85 1.2 Toe0.5A Vor2¥ D.c. Current Gain (Note) Beis | 50 120 240 Ige0.1A VoR-2¥ Bre ze | 20 55 Yorssv Current Gein-Bandvidth Product fr 50 150 o50mk VoR-10¥ Coltector-Base Capacitance cop 15 25 Yopel0Y Tmo Pulse Test + ‘Width0,3a5, Daty Cyolenl Hote « BYE 1 is classified as follove. Group 4 1 50-100 Group B + 60-160 Group ¢ + 120-240 CL855 CL866 ‘TYPICAL CHARACTERISTICS (T, = 25°C UNLESS OTHERWISE SPECIFIED) ‘TOTAL POWER DISSIPATION Vge AND Veg teat) Me AMBIENT TEMPERATURE wacolLecton CURRENT Prot TITTMT TTT = ™ pulse test. s 12 1° a my ee HY over a Lin We oy 5) a a 5 im = > 02 1 ve bn oe 5 ° ca 1 Hm meq 7 teow be. cuanent cain CURRENT GAIN ~ BANOWOTH PRODUCT va COLLECTOR CURRENT we COLLEGTON CURRENT "0 | Tm ER I Mee ce" wat U wm Loe pulse test| 1 ut ase N Il 0 1 0 ” 5 LH wt Tk , © ‘0 m0 Ila tem CX PRODUCT LINE DISCRETE SILICON TRANSISTORS, FOR PORTABLE B & W TV RECEIVERS. BLOCK DIAGRAM INTEGRATED CIRCUIT oR YOKE 0x95, 8CRI58. CX PRODUCT LINE sion + ( a0G2e04 @ 222d + ( 30a @ KANT + ( vaeaue isp 99119 * SGUIO 20s Jot cor fori eccror | coe @ wo] oz © tol olor [os | reo] - | oral ore,2 lors wcoelors ecsror | zoe © rol oz e to os2|o fos | reso] - | Lr6x0 or eet foros @.09 | r/oot @ os6-o0 | 06/00 © sr0| of © tro} Sea] or [vr | ve6-ox}acéxa} odxa ores lores woe | 1/06 w oxo |

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