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Conc lusion for Expeiment 7
In this experiment, we studied some JFET biasing applications and determined its model parameters. Firstly, by changing VGS we measured the ID values of our component. Then we determined its IDSS and Vp values to calculate K value. Next, we implemented the fixed gate voltage JFET biasing circuit which we had designed our pre-work. In this circuit, gate voltage was constant and we changed by new K; Vp values. In our designs, we determined the VDS voltage to equal 3V and ID=1mA. Another circuit was the self biasing circuit. It was self biased by a resistor from the source. In FET applications, gate resistors must be high values because FETs are voltage controlled elements. Last circuit was a combination of two bias circuits, we designed a voltage divider biasing circuit which is most used biasing technic. R1 and R2 divide the voltage to provide gate voltage; drain current ID is dissipated on RD, RS, and JFET so that VDS is obtained by VDD-ID(RD+RS).