The term vertical is due primarily to the fact that the channel is now formed in the vertical direction rather than the horizontal direction for the planar device., VMOS is also used to describe the V-

groove shape vertically cut into the substrate material metal oxide semiconductor transistor. The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it.
the channel of Fig. 5.42 also has the appearance of a ³V´ cut in the semiconductor base,

Fig 1.VMOS construction.

Current-Voltage Characteristics:

Same as MOSFET.


Advantage  Compared with commercially available planar MOSFETs, VMOS FETs have reduced channel resistance levels and higher current and power ratings.  VMOS FETs have a positive temperature coefficient that will combat the possibility of thermal runaway.  The reduced charge storage levels result in faster switching times for VMOS construction compared to those for conventional planar construction.

The device was used as a power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower tmaximum electric field at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS.

See sze page 495 . Switching times of a few nanoseconds and a current-carrying capacity of one amp or more are possible with discrete VMOS devices. the substrate acts as the source. with the channel formed along the four sides of the groove.19(b). which was at one time considered for memory circuits. The channel width is determined by the thickness of the epitaxial layer.In the V-groove (VMOS) construction of Figure 2. which in early days was shorter than could be achieved with conventional MOS fabrication methods using lithography² this is no longer the case.

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