DL111/D

Rev. 8, July-2001

Bipolar Power Transistor Data

Bipolar Power Transistor Data

DL111/D
Rev. 8, Jul–2001

 SCILLC, 2001
Previous Edition  1995
“All Rights Reserved’’

Grafoil is a registered Trademark of Union Carbide.
Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
Thermasil is a registered trademark and Thermafilm is a trademark of Thermalloy, Inc.
Kapton is a registered trademark of du Pont de Nemours & Co., Inc.
Sil–Pad is a registered trademark of the Bergquist Company.
CHO–THERM is a registered trademark of Chomerics, Inc.
FULLPAK, ICePAK, PowerBase, SCANSWITCH, SWITCHMODE, and Thermopad are trademarks of Semiconductor Components
Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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2

Table of Contents

Chapter 1. Selector Guide

Chapter 2. Data Sheets
Page

Page

Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Selection by Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Plastic TO–220AB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Plastic TO–218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Plastic (Isolated TO-220 Type) . . . . . . . . . . . . . . . . 13
Large Plastic TO-264 . . . . . . . . . . . . . . . . . . . . . . . . 13
Plastic TO–225AA Type
(Formerly TO–126 Type) . . . . . . . . . . . . . . . . . . . . 14
DPAK – Surface Mount Power Packages . . . . . . . 16
Metal TO–204AA (Formerly TO–3),
TO–204AE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Plastic TO–247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SOT–223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Electronic Lamp Ballasts . . . . . . . . . . . . . . . . . . . . . . . . 21

Bipolar Power Transistor Data Sheets . . . . . . . . . . . . 23

Chapter 3. Applications Information and
Case Outlines
Application Note: A High–Performance
Video Amplifier for High Resolution
CRT Applications (AN1040/D) . . . . . . . . . . . . . . . . . 751
Case Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775

Chapter 4. Numeric Index
Alpha Numeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . 783
Sales Office Listing . . . . . . . . . . . . . . . . . . . . . . . . . . 787
Document Type Definitions . . . . . . . . . . . . . . . . . . . . 788

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4

CHAPTER 1
Selector Guide

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5

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6

Bipolar Power
Transistors

In Brief . . .
ON Semiconductor’s broad line of Bipolar Power
Transistors includes discrete and Darlington transistors
in a variety of packages from the popular surface mount
DPAK at 1.75 watts to the 250 watt TO-3. We now have
transistors in SO–8 (Dual Transistors) and SOT–223. We
have a broad line of Electronic Lamp Ballast Transistors,
in the BUL Series and MJD18002D2T4, MJE18002, and
MJE18004D24. New products include low VCE(sat)
devices in surface mount SOT–223 package,
MMJT9435T1/MMJT9410T1 and in the SO–8 package
(Dual
Transistors),
MMDJ3N03BJTR2/
MMDJ3P03BJTR2. We also have a broad line of high
performance Audio Output Transistors in TO–3, TO–264
and new products in the Isolated Hole Plastic TO–247
package. The new TO–247 devices are designated
MJW21191/2/3/4/5/6 and high fT, MJW3281A/1302A.
These have excellent high voltage FBSOA performance.
ON Semiconductor has a commitment to quality and
total customer satisfaction.

Page

Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . 8
Selection by Package . . . . . . . . . . . . . . . . . . . . . . . 8
Plastic TO–220AB . . . . . . . . . . . . . . . . . . . . . . . . 9
Plastic TO–218 . . . . . . . . . . . . . . . . . . . . . . . . . 12
Plastic (Isolated TO-220 Type) . . . . . . . . . . . . 13
Large Plastic TO-264 . . . . . . . . . . . . . . . . . . . . 13
Plastic TO–225AA Type
(Formerly TO–126 Type) . . . . . . . . . . . . . . . . 14
DPAK – Surface Mount Power Packages . . . 16
Metal TO–204AA (Formerly TO–3),
TO–204AE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Plastic TO–247 . . . . . . . . . . . . . . . . . . . . . . . . . 19
D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SOT–223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Electronic Lamp Ballasts . . . . . . . . . . . . . . . . . . . . 21

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7

BIPOLAR POWER TRANSISTORS SELECTOR GUIDE
SELECTION BY PACKAGE
IC Range
(Amps)

VCE Range
(Volts)

PD
(Watts)

TO-204AA
(TO-3)

4.0-30

40-250

115-250

TO-204AE
(TO–3)

30–60

60-120

150-300

DPAK

0.5-10

40-450

12.5-20

DPAK

0.5-10

40-450

12.5-20

TO-220AB

0.5-15

60-400

30-125

Isolated
TO-220 Type

1.0-12

60-450

20-45

TO-225AA
(TO-126 Type)

0.3-5.0

25-400

12.5-40

SOT–223

3.0

30

2.0 (Note 1.)

SO–8

3.0

30

2.0 (Note 2.)

TO-264

15-16

200-250

250

D2PAK

5.0–8.0

80–450

50–65

TO–247

8.0–16

150–250

200

TO–218

5.0–10

60–350

125–150

Package

1. Tested on 1″ sq. FR4 Board
2. Tested on 1″ sq., 2 oz. copper

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8

Plastic TO–220AB
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts Min
(Note 7.)

1.0

80

TIP29B

TIP30B

100

TIP29C

TIP30C

250

TIP47

300

TIP48

NPN

350

2.0

15/75

1.0

0.6 typ

@ IC
Amp

PD
(Case)
Watts
@ 25°C

Page

0.3 typ

1.0

3.0

30

725

15/75

1.0

0.6 typ

0.3 typ

1.0

3.0

30

725

30/150

0.3

2.0 typ

0.18 typ

0.3

10

40

747

MJE5730

30/150

0.3

2.0 typ

0.18 typ

0.3

10

40

747,
581

MJE5731

30/150

0.3

2.0 typ

0.18 typ

0.3

10

40

581
747,
581

MJE5731A
(Note 6.)

30/150

0.3

2.0 typ

0.18 typ

0.3

10

40

60

TIP110
(Note 4.)

TIP115
(Note 4.)

500 min

2.0

1.7 typ

1.3 typ

2.0

25
(Note 3.)

50

80

TIP111
(Note 4.)

TIP116
(Note 4.)

500 min

2.0

1.7 typ

1.3 typ

2.0

25
(Note 3.)

50

TIP112
(Note 4.)

TIP117
(Note 4.)

500 min

2.0

1.7 typ

1.3 typ

2.0

25
(Note 3.)

50

14/36

0.4

2.75
(Note 5.)

0.175
(Note 5.)

1.0

13 typ

50

BUL44

450/1000

BUX85

450/1000

MJE18002

709
709
709
279

30

0.1

3.5

1.4

1.0

4.0

50

14/34

0.2

3.0
(Note 5.)

0.17
(Note 5.)

1.0

12 typ

40

313
505

60

TIP31A

TIP32A

25 min

1.0

0.6 typ

0.3 typ

1.0

3.0

40

729

80

TIP31B

TIP32B

25 min

1.0

0.6 typ

0.3 typ

1.0

3.0

40

729

100

BD241C

BD242C

25 min

1.0

3.0

40

157

TIP31C

TIP32C

25 min

1.0

0.6 typ

0.3 typ

1.0

3.0

40

729

D44C12

D45C12

40/120

0.2

1.0

40 typ

30

320

6/30

3.0

3.0

0.7

3.0

4.0

60

468

80
400/700

5.0

@ IC
Amp

fT
MHz
Min

tf
µs
Max

TIP50

400/700

4.0

hFE
Min/Max

ts
µs
Max

400

100

3.0

PNP

Resistive Switching

MJE13005

60

TIP120
(Note 4.)

TIP125
(Note 4.)

1k min

3.0

1.5 typ

1.5 typ

3.0

4.0
(Note 3.)

65

80

TIP121
(Note 4.)

TIP126
(Note 4.)

1k min

3.0

1.5 typ

1.5 typ

3.0

4.0
(Note 3.)

65

TIP122
(Note 4.)

TIP127
(Note 4.)

1k min

4.0
(Note 3.)

75

100

3.0

1.5 typ

1.5 typ

4.0

715
715
715

250

2N6497

10/75

2.5

1.8

0.8

2.5

5.0

80

400/700

BUL45

14/34

0.3

1.7
(Note 5.)

0.15
(Note 5.)

1.0

12 typ

75

1.7

0.15

1.0

450/1000

MJE18004

14/34

0.3

MJE18004D2*

133
296

13

75

522
512

3. |hFE| @ 1.0 MHz
4. Darlington
5. Switching tests performed with special application simulator circuit. See data sheet for details.
6. VCEO = 375 V
7. When 2 voltages are given, the format is VCEO(sus)/VCES.
*D2 suffix indicates transistor with built in C–E freewheeling diode and antisaturation network.
Devices listed in bold, italic are ON Semiconductor preferred devices.

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Plastic TO–220AB (continued)
Device Type
@ IC
Amp

15/75

3.0

0.4 typ

0.15 typ

3.0

3.0

65

742

TIP42B

15/75

3.0

0.4 typ

0.15 typ

3.0

3.0

65

742

BD244B

15 min

3.0

0.4 typ

0.15 typ

3.0

3.0

65

162

BD243C

BD244C

15 min

3.0

0.4 typ

0.15 typ

3.0

3.0

65

162

TIP41C

TIP42C

15/75

3.0

0.4 typ

0.15 typ

3.0

3.0

65

742

6.0

60

TIP41A

TIP42A

80

TIP41B

BD243B

7.0

NPN

PNP

400/700

BUL146

14/34

0.5

1.75
(Note 10.)

0.15
(Note 10.)

3.0

14 typ

100

450/1000

MJE18006

14/34

0.5

3.2
(Note 10.)

0.13
(Note 10.)

3.0

14 typ

100

30

2N6288

50

8.0

@ IC
Amp

PD
(Case)
Watts
@ 25°C

hFE
Min/Max

VCEO(sus)
Volts Min
(Note 11.)

tf
µs
Max

fT
MHz
Min

ts
µs
Max

ICCont
Amps
Max

100

Resistive Switching

Page

263
531

2N6111

30/150

3.0

0.4 typ

0.15 typ

3.0

4.0

40

107

2N6109

30/150

2.5

0.4 typ

0.15 typ

3.0

4.0

40

107

2N6107

30/150

2.0

0.4 typ

0.15 typ

3.0

4.0

40

107

70

2N6292

150

BU407

30 min

1.5

0.75

5.0

10

60

214

200

BU406

30 min

1.5

0.75

5.0

10

60

214

60

2N6043
(Note 9.)

2N6040
(Note 9.)

1k/10k

4.0

1.5 typ

3.0

4.0
(Note 8.)

75

TIP100
(Note 9.)

TIP105
(Note 9.)

1k/20k

4.0
(Note 8.)

80

BDX53B
(Note 9.)

BDX54B
(Note 9.)

750 min

4.0
(Note 8.)

60

TIP101
(Note 9.)

TIP106
(Note 9.)

1k/20k

4.0
(Note 8.)

80

2N6045
(Note 9.)

2N6042
(Note 9.)

1k/10k

4.0
(Note 8.)

75

BDX53C
(Note 9.)

BDX54C
(Note 9.)

750 min

TIP102
(Note 9.)

TIP107
(Note 9.)

1k/20k

120

MJE15028

MJE15029

20 min

150

MJE15030

MJE15031

20 min
200 min

4.0

80

100

300/600

MJE5740
(Note 9.)

3.0

1.5 typ
1.5 typ

1.5 typ

3.0

3.0
3.0
3.0

1.5 typ
1.5 typ

1.5 typ
1.5 typ

3.0
3.0

98
704
203
704
98

3.0
203
3.0

1.5 typ

4.0
(Note 8.)

80

4.0

30

50

492

4.0

30

50

492

4.0

80

8.0 typ

1.5 typ

2.0 typ

3.0

6.0

704

585

300

MJE5850

15 min

2.0

2.0

0.5

4.0

80

590

350

MJE5851

15 min

2.0

2.0

0.5

4.0

80

590

MJE5742
(Note 9.)

200 min

4.0

8.0 typ

2.0 typ

6.0

80

MJE13007

5/30

5.0

3.0

0.7

5.0

80

474

15 min

2.0

2.0

0.5

4.0

80

590

400

585

MJE5852

8. |hFE| @ 1.0 MHz
9. Darlington
10. Switching tests performed with special application simulator circuit. See data sheet for details.
11. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Plastic TO–220AB (continued)
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts Min
(Note 15.)

8.0

400/700
450/1000

10

60

Resistive Switching
ts
µs
Max

tf
µs
Max

hFE
Min/Max

@ IC
Amp

BUL147

14/34

1.0

2.5
(Note 14.)

MJE18008

16/34

1.0

2.75
(Note 14.)

40 min

4.0

NPN

PNP

PD
(Case)
Watts Page
@ 25°C

@ IC
Amp

fT
MHz
Min

0.18
(Note 14.)

2.0

14 typ

125

272

0.18
(Note 14.)

2.0

13 typ

125

538

50

320

D44H8

D45H8

MJE3055T

MJE2955T

20/70

4.0

75

560

2N6387
(Note 13.)

2N6667
(Note 13.)

1k/20k

5.0

20
(Note 12.)

65

121,
137

BDX33B
(Note 13.)

BDX34B
(Note 13.)

750 min

3.0

3.0

70

197

BD809

BD810

15 min

4.0

1.5

90

183

2N6388
(Note 13.)

2N6668
(Note 13.)

1k/20k

5.0

20
(Note 12.)

65

121,
137

D44H10

D45H10

20 min

4.0

0.5 typ

0.14 typ

5.0

50 typ

50

316

D44H11

D45H11

40 min

4.0

0.5 typ

0.14 typ

5.0

50 typ

50

316

100

BDX33C
(Note 13.)

BDX34C
(Note 13.)

750 min

3.0

3.0

70

197

12

400/700

MJE13009

6/30

8.0

3.0

0.7

8.0

4.0

100

483

15

60

2N6487

2N6490

20/150

5.0

0.6 typ

0.3 typ

5.0

5.0

75

127

80

2N6488

2N6491

20/150

5.0

0.6 typ

0.3 typ

5.0

5.0

75

127

D44VH10

D45VH10

20 min

4.0

0.5

0.09

8.0

50 typ

83

318

BDW42
(Note 13.)

BDW47
(Note 13.)

1k min

5.0

1.0 typ

1.5 typ

5.0

4.0

85

190

80

100

12. |hFE| @ 1.0 MHz
13. Darlington
14. Switching tests performed with special application simulator circuit. See data sheet for details.
15. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Plastic TO–218 Type
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts Min
(Note 18.)

10

60

100

Resistive Switching
hFE
Min/Max

@ IC
Amp

TIP145
(Note 17.)

500 min

10

2.5 typ

2.5 typ

5.0

4.0
(Note 16.)

125

720

TIP141
(Note 17.)

TIP146
(Note 17.)

500 min

10

2.5 typ

2.5 typ

5.0

4.0
(Note 16.)

125

720

BDV65B
(Note 17.)

BDV64B
(Note 17.)

1k min

5.0

125

187

TIP33C

TIP34C

20/100

3.0

3.0

80

734

TIP142
(Note 17.)

TIP147
(Note 17.)

500 min

10

4.0
(Note 16.)

125

720

500/3400

5.0

150

209

5 min

10

2.5

80

727

NPN

PNP

TIP140
(Note 17.)

2.5 typ

tf
µs
Max

@ IC
Amp

PD
(Case)
Watts
@ 25°C

ts
µs
Max

2.5 typ

5.0

fT
MHz
Min

350

BU323Z
(Note 17.)

60

TIP3055

TIP2955

150

MJH11018
(Note 17.)

MJH11017
(Note 17.)

400/15k

10

3.0

150

634

200

MJH11020
(Note 17.)

MJH11019
(Note 17.)

400/15k

10

3.0

150

634

250

MJH11022
(Note 17.)

MJH11021
(Note 17.)

400/15k

10

3.0

150

634

16

160

MJE4343

MJE4353

15 min

8.0

1.0

125

574

20

100

MJH6284
(Note 17.)

MJH6287
(Note 17.)

750/18k

10

4.0

125

640

25

60

TIP35A

TIP36A

15/75

15

0.6 typ

0.3 typ

10

3.0

125

737

100

TIP35C

TIP36C

15/75

15

0.6 typ

0.3 typ

10

3.0

125

737

15

16. |hFE| @ 1.0 MHz
17. Darlington
18. When 2 voltages are given, the format is VCEO(sus)/VCES.

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12

6.0

Page

1.2 typ

1.2 typ

8.0

Plastic (Isolated TO-220 Type)
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts
Min

1.0

250

MJF47

3.0

100

MJF31C

5.0

100

MJF122
(Note 20.)

450
8.0

1000

1000

PD
(Case)
Watts Page
@ 25°C

hFE
Min/Max

@ IC
Amp

ts
µs
Max

30/150

0.3

2.0 typ

MJF32C

10 min

1.0

0.6

0.3

1.0

3.0

28

729

MJF127
(Note 20.)

2000 min

3.0

1.5 typ

1.5 typ

3.0

4.0
(Note 19.)

28

601

14/34

0.3

1.7
(Note 21.)

0.15
(Note 21.)

1.0

13 typ

35

522

40 min

3.0

1.0 typ

0.15 typ

3.0

30

35

608

16/34

1.0

2.75
(Note 21.)

0.18
(Note 21.)

2.0

13 typ

45

538

2.0

40

614

5.0

40

35

618

20
(Note 19.)

40

627

NPN

PNP

MJF18004
MJF15030

150
450

10

VCES
Volts
Min

Resistive Switching

MJF15031

MJF18008

tf
µs
Max

@ IC
Amp

fT
MHz
Min

0.17 typ

0.3

10

28

622

60

MJF3055

MJF2955

20/100

4.0

80

MJF44H11

MJF45H11

40/100

4.0

0.5 typ

0.14 typ

100

MJF6388
(Note 20.)

MJF6668
(Note 20.)

3k/20k

3.0

1.5 typ

1.5 typ

Large Plastic TO-264
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts
Min

NPN

15

200

MJL3281A

16

250

Resistive Switching
ts
µs
Max

tf
µs
Max

@ IC
Amp

fT
MHz
Min

PD (Case)
Watts
@ 25°C Page

PNP

hFE
Min/Max

@ IC
Amp

MJL1302A

60/175

5.0

30 typ

200

655

MJL21194

MJL21193

25/75

8.0

4.0

200

644

MJL21196

MJL21195

25/75

8.0

4.0

200

649

19. |hFE| @ 1.0 MHz
20. Darlington
21. Switching tests performed with special application simulator circuit. See data sheet for details.

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13

Plastic TO–225AA Type (Formerly TO–126 Type)
Device Type
ICCont
Amps
Max

VCEO(sus)
Volts
Min

0.3

350

0.5

200
250

2N5655

300

MJE340

350

2N5657

Resistive Switching

1.5

2.0
0

3.0

@ IC
Amp

fT
MHz
Min

PD
(Case)
Watts
@ 25°C

@ IC
Amp

MJE3439

40/160

0.02

15

15

566

MJE344

30/300

0.05

15

20.8

568

PNP

MJE350

30/250

0.1

30/240

0.05

30/250

0.1

3.5 typ

0.24 typ

0.1

10

3.5 typ

0.24 typ

0.1

10

Page

20

80

20.8

563,
570

20

80

30/240

0.05

20

146

40

2N4921

2N4918

20/100

0.5

0.6 typ

0.3 typ

0.5

3.0

30

55,
50

60

2N4922

2N4919

20/100

0.5

0.6 typ

0.3 typ

0.5

3.0

30

55,
50

80

2N4923

2N4920

20/100

0.5

0.6 typ

0.3 typ

0.5

3.0

30

55,
50

45

BD135

BD136

40/250

0.15

12.5

142,
144

60

BD137

BD138

40/250

0.15

12.5

142,
144

80

BD139

BD140

40/250

0.15

12.5

142,
144

400

MJE13003
(Note 24.)

5/25

1.0

4.0

0.7

1.0

5.0

40
461

80

BD237

100

MJE270
MJE271
1.5k min
(Notes 23. & 24.) (Notes 23. & 24.)

BD238

25 min

1.0

3.0

25

0.12

6.0

15

MJE181

MJE171

50/250

0.1

80

BD179

BD180

40/250

0.15

MJE182

MJE172

50/250

0.1

8.0 min

1.0

BUH51
(Note 24.)

154
558

60

500
4.0

tf
µs
Max

hFE
Min/Max

NPN

BD159
1.0

ts
µs
Max

0.6 typ

0.6 typ

0.12 typ

0.12 typ

0.1

0.1

50

50

12.5

501

25

148,
151

12.5

501

50
254
40

579,
572

3.0

36

166,
169

3.0

36

166,
169

1.5

40

172,
175

750 min

1.5

40

172,
175

BD788

20 min

2.0

2N5194

25/100

1.5

MJE800
(Note 23.)

MJE700
(Note 23.)

750 min

1.5

2N6038
(Note 23.)

2N6035
(Note 23.)

750/18k

2.0

40

MJE521

MJE371

40 min

1.0

45

BD437

BD438

40 min

2.0

60

BD439

BD440

25 min

2.0

BD677
(Note 23.)

BD678
(Note 23.)

750 min

BD677A
(Note 23.)

BD678A
(Note 23.)

BD787
2N5191

0.4 typ

1.7 typ

0.4 typ

1.2 typ

1.5

2.0

50

15

178

2.0

40

62,
67

1.0
(Note 22.)

40

25

40

596
92

22. |hFE| @ 1.0 MHz
23. Darlington
24. Case 77, Style 3

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14

com 15 40 172.) MJE702 (Note 26.7 typ 1.0 1. 175 MJE802 (Note 26.0 40 172.0 MHz 26.15 typ 0.0 (Note 25.5 2. |hFE| @ 1.) 40 1.) BD680 (Note 26.07 typ 2.) MJE703 (Note 26.4 typ @ IC Amp fT MHz Min PD (Case) Watts @ 25°C 1.) 750/18k 2.0 25 25. 175 BD679A (Note 26.5 BD441 BD442 15 min 2.Plastic TO–225AA Type (Formerly TO–126 Type) (continued) Device Type ICCont Amps Max VCEO(sus) Volts Min 4.) 750 min 1.0 80 100 5.) 750 min 1.) BD680A (Note 26. 169 Page 2N5192 2N5195 25/100 1.13 typ 0.) 2N6036 (Note 26.0 40 62. 67 3.035 typ 2.0 1.) 40 25 40 596 596 92 http://onsemi.0 MJE200 MJE210 45/180 2 0.5 40 172.) 750 min 2N6039 (Note 26.5 MJE803 (Note 26.) 750 min 1.) BD682 (Note 26. Darlington NPN Resistive Switching PNP hFE Min/Max @ IC Amp ts µs Max 0.0 36 166.0 BD679 (Note 26.2 0.0 (Note 25.2 typ 2.4 typ tf µs Max 0.0 BD681 (Note 26.5 MJE243 MJE253 40/120 0.) 750 min 2. 175 40 15 553 65 15 548 .0 2.

0 2. Darlington http://onsemi.04 1.14 5.5 418 6.) MJD6036T4 (Note 28.0 10 456 401 429 20 446 27.com 16 .0 8.0 100 MJD41CT4 MJD42CT4 15/75 3.5 10 4.0 25 20 100 MJD243T4 MJD253T4 40/180 0.15 0.2 2.0 min 2.3 2.0 2.0 1.15 3.0 0.0 25 MJD200T4 MJD210T4 45/180 2.3 1000 min 2.0 1.0 20 80 MJD44ET4 (Note 28.) 1k/2k 4.3 1.04 2.0 0.7 1.0 3.0 15 433 100 MJD31CT4 MJD32CT4 10 min 1.3 2.0 Resistive Switching ts µs Max tf µs Max @ IC Amp hFE Min/Max @ IC Amp 30/240 0.0 40 12.5 3.0 0.0 20 442 80 MJD44H11T4 MJD45H11T4 40 min 4.0 typ 0.DPAK – Surface Mount Power Packages Device Type ICCont Amps Max VCEO(sus) Volts Min 0.3 MJD50T4 30/150 0.2 0.0 3.) 20 60 MJD3055T4 MJD2955T4 20/100 4.3 1.0 250 400 100 MJD112T4 (Note 28.) 2.5 2.5 0.0 0.3 2.0 50 typ 20 448 100 MJD122T4 (Note 28.0 1.7 1.6 0.) fT MHz Min PD (Case) Watts @ 25°C Page 15 438 10 15 452 10 15 452 25 (Note 27.15 typ 1.) 20 395 6.0 15 433 80 MJD6039T4 (Note 28.6 0.5 300 MJD340T4 1.0 65 12.16 0. |hFE| @ 1.0 1.4 0.0 4.0 MHz 28.2 0.2 0.0 1.0 0.) 1k/2k 2.) 1k min 5.0 0.0 3.) MJD127T4 (Note 28.0 4 (Note 27.5 1.0 13 typ 25 407 40 MJD31T4 MJD32T4 10 min 1.0 NPN 450 MJD18002D2T4 PNP MJD350T4 MJD117T4 (Note 28.5 423 5.0 0.0 3.0 0.05 MJD47T4 30/150 0.

0 0.0 (Note 29.3 typ 4.0 MHz 30.2 typ 1.1 typ 1.0 (Note 29.0 1.0 4.) 160 60 2N3772 80 2N6283 (Note 30.5 typ 10 325 112 20/100 12 1.0 200 342 2N6052 (Note 30.0 117 35 MJ15012 20/100 2.0 PNP MJ2955 2N3055A 16 ts µs Max 20/70 4.0 200 87 100 2N6338 30/120 10 1.0 4.5 typ 10 4.5 typ 2.0 150 46 2N5631 2N6031 15/60 8.) 150 2.0 0.) 750/18k 10 4. Darlington 31.0 120 MJ15015 MJ15016 20/70 4.6 typ 1.0 180 25 337 102 20/70 4.0 2.0 1.0 1.7 typ 0.0 140 MJ15001 MJ15002 25/150 4.3 typ 4.0 0. the format is VCEO(sus)/VCES. 349 250 MJ15024 MJ15025 15/60 8.5 0.5 typ 6.5 115 31 0.0 200 76 200 MJ15022 MJ15023 15/60 8.0 20/70 4.) 175 140 2N3773 2N6609 15/60 8.com 17 60 112 .0 2.0 0.0 (Note 29.8 115 25 1.) 750/18k 10 2.8 10 4.0 (Note 29.) 100 min 15 3.5 typ 2.8 10 4.7 typ 0.0 200 250 MJ11022 (Note 30.) 160 MJ15003 MJ15004 25/150 5.0 250 357 15/60 10 2.0 250 346.0 Page 344 4.0 150 38 2N6286 (Note 30.2 typ 8.) 4.0 5.0 250 346.0 250 MJ15020 10 140 2N3442 250 MJ15011 12 15 NPN 100 60 2N3055 Resistive Switching 20 25 tf µs Max @ IC Amp fT MHz Min PD (Case) Watts @ 25°C 20 150 hFE Min/Max @ IC Amp MJ15021 30 min 1. When 2 voltages are given.0 1.Metal TO–204AA (Formerly TO–3) Device Type ICCont Amps Max VCEO(sus) Volts Min (Note 31.) 90 2N5038 100 2N6284 (Note 30.5 12 60 140 2N6287 (Note 30.0 200 87 80 2N5886 2N5884 20/100 10 1.25 10 40 200 118 29.5 typ 8.) MJ11021 (Note 30.0 250 340 60 2N5885 2N5883 20/100 10 1.0 4.) 140 2.0 0. |hFE| @ 1.) 750/18k 6.0 250 352 MJ21196 MJ21195 25/75 8.0 5. http://onsemi. 349 MJ21194 MJ21193 25/75 8.0 0.25 10 40 200 118 150 2N6341 30/120 10 1.

) MJ11015 (Note 33.0 200 72 4.0 (Note 32.4 25 364.) 200 25/100 7. When 2 voltages are given.0 (Note 32. the format is VCEO(sus)/VCES.0 200 120 MJ11016 (Note 33.25 50 8. Case 197A–03 (TO–204AE) http://onsemi.0 300 83 50 300 330 BUV20 (Note 35.) 10 Page 322 MJ4502 120 60 @ IC Amp PNP tf µs Max MJ802 250 50 hFE Min/Max NPN ts µs Max 100 250 40 Resistive Switching 50 1.0 150 200 80 125 80 BUV21 (Note 35.2 0.0 250 304 80 1.25 80 250 304 MJ14003 (Note 35.3 typ 25 2.0 MHz 33.0 250 310 2N5686 (Note 35.5 2. & 35.8 0.) MJ11033 (Note 33. 35.) 1k min 20 2.35 20 8.) 2N5684 (Note 35.) 200 MJ11022 (Note 33.) MJ11021 (Note 33. Darlington 34.0 (Note 32.) 400/15k 3.0 150 42 2. 362 322 325 307 20 1. |hFE| @ 1.0 @ IC Amp 10 fT MHz Min PD (Case) Watts @ 25°C 2.1 0.) MJ11032 (Note 33.5 typ 0.) 10 min BUV60 (Note 35.Metal TO–204AA (Formerly TO–3) (continued) Device Type ICCont Amps Max VCEO(sus) Volts Min (Note 34.com 18 .) 15/100 50 300 333 32.) 10 min BUV22 (Note 35.) 10 min MJ14002 (Note 35.) 15/60 400 min 25 0. & 35.) 10 min 25 1.0 1.) 30 40 2N3771 60 15/60 15 2N5302 15/60 15 MJ11012 (Note 33.) 1k min 20 4.) 200 8.1 0.

5 30 Inductive Switching tf µs Max @ IC Amp fT MHz Min PD (Case) Watts @ 25°C Page hFE Min/Max @ IC Amp MMJT9435T1 50 1.0 65 381 40 50 388 0.0 450/1000 6.0 2.0 *Available in Q2. 699 MMJT350T1 30/240 0.0 4.4 MJB42CT4 15/75 3.0 30 MMDJ3N03BJTR2 MMDJ3P03BJTR2 50 1.0 200 665 MJW21196* MJW21195* 20/60 8.5 13 typ 75 367 3.0 PNP MJB18004D2T4 MJB44H11T4 0.8 692 NPN PNP MMJT9410T1 ts µs Max SO–8 (Dual Transistors) Device Type Inductive Switching ICCont Amps Max VCEO(sus) Volts Min NPN PNP hFE Min/Max @ IC Amp 3.0 100 8. 2001.0 80 NPN Inductive Switching hFE Min/Max @ IC Amp ts µs Max 6.0 SOT–223 Device Type ICCont Amps Max VCEO(sus) Volts Min 3.0 2.0 0.0 30 200 677 PD (Case) Watts @ 25°C Page NPN PNP D2PAK Device Type ICCont Amps Max VCEO(sus) Volts Min 5.0 Page 682. http://onsemi.0 4.05 0.0 MJB45H11T4 40/100 4.0 4.0 100 660 MJW21194* MJW21193* 20/60 8.Isolated Mounting Hole – Plastic TO–247 Device Type ICCont Amps Max VCEO(sus) Volts Min 8. 687 .5 typ tf µs Max @ IC Amp fT MHz Min 0.0 150 MJW21192 16 250 16 250 15 230 Inductive Switching ts µs Max tf µs Max @ IC Amp fT MHz Min PD (Case) Watts @ 25°C Page hFE Min/Max @ IC Amp MJW21191 15 min 8.0 200 671 MJW3281A* MJW1302A* 60/175 5.0 30 0.8 694.com 19 ts µs Max tf µs Max @ IC Amp fT MHz Min PD (Case) Watts @ 25°C 30 2.14 5.175 2.

0 1.0 352 MJL21194 MJL21193 340G–02 200 200 25/75 8.0 30 40/4.0 50/4. Recommended Power Transistors for Audio/Servo Loads RMS Power Output NPN PNP To 25 W MJE15030 25 to 50 W 50 to 100 W Over 100 W Case PD Watts @ 25°C VCEO hFE @ Min/Max IC Amps fT MHz Typ ISB Volts/Amps Page MJE15031 TO–220 50 150 20 min 4. 8 and 18 Ohm Loads PEAK OUTPUT CURRENT (AMPS) 50 500 16 OHMS 300 V (BR) CEO (VOLTS) Output Transistor Peak Collector Current versus Output Power for 4.0 100/2.0 100/1.0 649 MJW21192 MJW21191 340K–01 100 150 15 min 4. For a complete discussion see Application Note AN485.0 3.0 677 The Power Transistors shown are provided for reference only and show device capability.0 4.0 25 MJ15001 MJ15002 TO–204 200 140 25/150 4.0 50/4.0 340 MJ15020 MJ15021 TO–204 150 250 30 min 1.0 30 50/4.0 30 50/1.0 655 MJ21194 MJ21193 TO–204 250 250 25/75 8.0 40/5. 349 MJL3281A MJL1302A 340G–02 150 200 60/175 7.0 671 MJW3281A MJW1302A 340K–01 200 200 60/175 5.0 25 MJ15003 MJ15004 TO–204 250 140 25/150 5.0 4.0 337 MJ15015 MJ15016 TO–204 180 120 20/70 4.0 3.com 20 .0 4.0 60/3. http://onsemi.0 3.0 3.0 100/2.0 50/3.0 30 50/3.0 4. The final choice of the Power Transistors used is left to the circuit designer and depends upon the particular safe–operating area required and the mounting and heat sinking configuration used.0 100/2.0 665 MJW21196 MJW21195 340K–01 200 250 25/60 8.0 4.0 644 MJL21196 MJL21195 340G–02 200 200 25/75 8.0 3.0 80/2.0 660 MJW21194 MJW21193 340K–01 200 250 20/60 8.0 60/2.0 30 14/3.0 497 2N3055A MJ2955A TO–204 120 120 20/70 4. 8 and 16 Ohm Loads 8 OHMS 4 OHMS 100 70 50 30 10 10 30 50 100 300 500 1000 30 4 OHMS 8 OHMS 10 16 OHMS 5.Audio GENERAL DESIGN CURVES FOR POWER AUDIO OUTPUT STAGES V(BR)CEO Required on Output and Driver Transistor versus Output Power for 4.6 492 MJE15032 MJE15033 TO–220 50 250 50 min 1.0 4.0 10 30 OUTPUT POWER (WATTS) 50 100 300 500 1000 OUTPUT POWER (WATTS) Another important parameter that must be considered before selecting the output transistors is the safe–operating area these devices must withstand.2 346.0 344 MJ15024 MJ15025 TO–204 250 250 15/60 8.0 4.

8 10 2.25 75 286 450 1000 MJE18004 2.5 75 522 450 1000 MJE18004D2* 2.0 8.0 6.0 / 2.95 / 2.0 typ / 2.6 / 3.5 50 246 400 700 BUL45 2.0 6. http://onsemi.0 8.0 Device Type BUHXXX Series are specified for Halogen applications.6 / 3.0 5.8 125 272 450 1000 MJE18008 4.2 125 538 10 400 700 BUH100 5.0 / 3.0 500 800 BUH50 2.com 21 .4 75 512 400 700 BUL146 3.0 400 700 BUL44 0.5 6.0 100 226 15 400 700 BUH150 10 8.0 10 typ / 3.0 2.0 / 2.0 10 1.Bipolar Power Transistors for Electronic Lamp Ballasts Plastic TO–220AB ICCont Amps Max VCEO(sus) Volts Min VCES Volts Min IC Operating Amps hFE min @ IC Operating VCE = 1.0 8.8 75 296 400 700 BUL45D2* 2.75 150 236 6.0 typ / 2.0 6.2 100 531 400 700 BUL147 4.0 2.0 2. *D2 suffix indicates transistor with built in C–E freewheeling diode and antisaturation network.1 / 2.5 8.75 50 505 4.8 100 263 450 1000 MJE18006 3.0 V Inductive Switching @ IC Operating Tsi Min/Max (µs) PD (Case) Watts @ 25°C Page 2.0 / 3.0 6.6 / 3.0 2.0 7.6 / 3.8 50 279 450 1000 MJE18002 1.

0 500 800 IC Operating Amps hFE min @ IC Operating VCE = 1.0 450/1000 Device Type NPN Inductive Switching PNP hFE Min/Max @ IC Amp ts µs Max 6.Bipolar Power Transistors for Electronic Lamp Ballasts Case 221D-02 is UL RECOGNIZED for its isolation feature.150 @ IC Amp fT MHz Min PD (Case) Watts @ 25°C Page 1.0 V BUD44D2–1* 0.05 / 2.0 2. Plastic (Isolated TO-220 Type) ICCont Amps Max VCEO(sus) Volts Min VCES Volts Min IC Operating Amps hFE min @ IC Operating VCE = 1. Case 77.75 50 254 Device Type 36.0 400 700 BUL146F 3.0 / 3.0 450 1000 MJF18008 4.0 V Device Type 5.8 20 typ Inductive Switching @ IC Operating Tsi Min/Max (µs) 2.35 Surface Mount Power Packages – DPAK ICCont Amps Max VCEO(sus) CEO( ) /VCES Volts Min 2. *D2 suffix indicates transistor with built in C–E freewheeling diode and antisaturation network.0 2.0 typ / 3.0 V Inductive Switching @ IC Operating Tsi Min/Max (µs) PD (Case) Watts @ 25°C Page MJE13003 (Note 36.0 6. Case 221D-02 has been evaluated to 3500 volts RMS.0 8.0 6.5 A 13 typ Page 367 Plastic TO–225AA Type (Formerly TO–126 Type) ICCont Amps Max VCEO(sus) Volts Min VCES Volts Min 1.0 1.0 8.5 400 700 3.2 MJD18002D2T4 tf µs Max 0.0 1.0 450 1000 MJF18004 2.6 / 3.) 1.8 40 263 6.0 400 700 Device Type IC Operating Amps hFE min @ IC Operating VCE = 1. http://onsemi.4 MJB18004D2T4 tf µs Max @ IC Amp fT MHz Min 0.0 A 13 typ 25 407 PD (Case) Watts @ 25°C 75 D2PAK ICCont Amps Max VCEO(sus) CEO( ) /VCES Volts Min 5.5 35 522 8.) 1.0 40 461 BUH51 (Note 36.0 / 3.com 22 .0 6. Style 3 BUHXXX Series are specified for Halogen applications.2 45 538 PD (Case) Watts @ 25°C Page 25 216 Surface Mount Power Packages – DPAK ICCont Amps Max VCEO(sus) Volts Min VCES Volts Min 2.5 Inductive Switching @ IC Operating Tsi Min/Max (µs) PD (Case) Watts @ 25°C Page / 2.0 2.0 450/1000 Device Type NPN Inductive Switching PNP hFE Min/Max @ IC Amp ts µs Max 6. Actual isolation rating depends on specific mounting position and maintaining required strike and creepage distances.175 2.

CHAPTER 2 Data Sheets http://onsemi.com 23 .

http://onsemi.com 24 .

Respectively ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Symbol 2N3055A MJ15015 MJ15016 Unit Collector–Emitter Voltage VCEO 60 120 Vdc Collector–Base Voltage VCBO 100 200 Vdc Collector–Emitter Voltage Base Reversed Biased VCEV 100 200 Vdc Emitter–Base Voltage VEBO 7.8 MHz (Min) – NPN = 2.52 0. or for inductive loads requiring higher safe operating area than the 2N3055. stepping motor and other linear applications. 2001 – Rev. . These devices can also be used in power switching circuits such as relay or solenoid drivers. PowerBase complementary transistors designed for high power audio. dc–to–dc converters. . *ON Semiconductor Preferred Device • Current–Gain — Bandwidth–Product @ IC = 1.98 C/W Thermal Resistance.0 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 7. Tstg 115 0. LLC. 120 VOLTS 115.2 MHz (Min) – PNP Safe Operating Area — Rated to 60 V and 120 V.0 Adc • fT = 0.  Semiconductor Components Industries. 2001 May. 4 25 Publication Order Number: 2N3055A/D .65 180 1.ON Semiconductor NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . Junction to Case *Indicates JEDEC Registered Data.03 –65 to +200 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD Rating Operating and Storage Junction Temperature Range TJ. inverters. 180 WATTS CASE 1–07 TO–204AA (TO–3) Watts W/C C THERMAL CHARACTERISTICS Characteristic Symbol Max Max Unit RθJC 1. (2N3055A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

com 26 175 200 . CASE TEMPERATURE (°C) Figure 1. AVERAGE POWER DISSIPATION (W) 2N3055A MJ15015 MJ15016 200 150 MJ15015 MJ15016 100 2N3055A 50 0 0 25 50 75 100 125 150 TC. Power Derating http://onsemi.PD(AV).

0 Adc. MJ15016 (VCE = 60 Vdc) IS/b ICEO ICEV mAdc ICEV mAdc mAdc mAdc *SECOND BREAKDOWN Adc *ON CHARACTERISTICS (1) DC Current Gain (IC = 4. VBE(off) = 1.0 18 MHz Cob 60 600 pF td — 0. TC = 150C) 2N3055A MJ15015. VCE = 4.0 Vdc) (IC = 10 Adc.2 1.2 6.0 MHz) 2N3055A. IB = 400 mAdc) (IC = 10 Adc.com 27 .8 2. IB1 = IB2 = 0.0 1. IC = 4. VBE(off) = 1.0 — — 30 6.0 Adc. (2N3055A) http://onsemi.0 Vdc) VBE(on) 0. MJ15016 Emitter Cutoff Current (VEB = 7.0 Vdc. IB = 3.0 — — 5. VCE = 2.3 Adc) (IC = 15 Adc.7 0. f = 1.95 3.0 70 70 — — — — 1.5 Vdc.0 Vdc) (IC = 4. MJ15016 Collector Cutoff Current (VCEV = Rated Value.5 µs tr — 4. VCE = 4. IC = 0) 2N3055A MJ15015.0 µs *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.5 Vdc) 2N3055A MJ15015.0 0.0 Adc. VCE = 4.4 0 4 Adc.7 1. MJ15016 Collector Cutoff Current (VCE = 30 Vdc.0 Vdc.8 Vdc fT 0. IB = 0) 2N3055A MJ15015. Duty Cycle  2%. *Indicates JEDEC Registered Data.2N3055A MJ15015 MJ15016 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 120 — — Vdc — — 0.0 5.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4.0 Adc.0 Adc. MJ15015 MJ15016 Output Capacitance (VCB = 10 Vdc. IB = 7. MJ15016 IEBO Second Breakdown Collector Current with Base Forward Biased (t = 0.0 Adc.5 s non–repetitive) 2N3055A MJ15015.1 — — 5.0 OFF CHARACTERISTICS (1) *Collector–Emitter Sustaining Voltage (IC = 200 mAdc.0 — — 10 20 5. Adc µ Duty y Cycle y  2% tp = 25 µs Fall Time (1) Pulse Test: Pulse Width = 300 µs. VBE(off) = 0 Vdc) (VCE = 60 Vdc. VBE(off) = 0 Vdc) 2N3055A MJ15015.0 µs tf — 6. f = 1. IE = 0.1 3.0 µs ts — 3.0 MHz) *SWITCHING CHARACTERISTICS (2N3055A only) RESISTIVE LOAD Delay Time Rise Time Storage Time (VCC = 30 Vdc. VCE = 4.0 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 4. MJ15016 *Collector Cutoff Current (VCEV = Rated Value.

5 0. COLLECTOR CURRENT (AMPS) Figure 4.8 TJ = 25°C 2.com 28 7 10 15 .5 1 0.5 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V 0. VOLTAGE (VOLTS) 2.0 2.1 0.7 1 2 3 5 7 10 20 1 2 5 10 MJ15016 5. DC Current Gain 3.7 1 2 3 IC. “On” Voltages Figure 5.0 2N3055A MJ15015 1.7 1 2 3 5 IC.0 IC. TIME (s) µ V.1 0.5 0 VCE(sat) @ IC/IB = 10 0.4 0 0.4 2 IC = 1 A 1.2 0. COLLECTOR CURRENT (AMP) IC. T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 2 1. Collector Saturation Region TC = 25°C 3 8A 1. COLLECTOR CURRENT (AMP) Figure 7.5 0.5 IB.01 0.5 Ω 25 µs +13 V 3 t.0 V 10 7 5 3 2 0. Turn–On Time http://onsemi.3 5 0. Current–Gain — Bandwidth Product 10 7 5 VCC +30 V 7. BASE CURRENT (AMP) Figure 3.05 0.8 0.02 f.005 0.2 0.6 0.5 0.2 Figure 2.5 4A SCOPE 30 Ω 0 tr.3 1N6073 -11 V VCC = 30 V IC/IB = 10 TJ = 25°C 0. tf ≤ 10 ns DUTY CYCLE = 1.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 -55°C 30 20 25°C VCE = 4.2N3055A MJ15015 MJ15016 TJ = 150°C 100 70 50 hFE .3 0. Switching Times Test Circuit (Circuit shown is for NPN) td 0.2 7 10 15 2.3 0.7 0.2 0.2 0. DC CURRENT GAIN VCE .5 0. COLLECTOR CURRENT (AMP) 0.0 0.0 2.5 1.2 -5 V 0.0% 2 tr 1 0.1 Figure 6.

0 IC = ICES REVERSE 0.0 100°C IC = ICES 0.3 0.1 Figure 11. MJ15016 http://onsemi.1 REVERSE 0.1ms 10 IC.2 +0.5 0. COLLECTOR CURRENT (A) µ IC.000 PNP 100 TJ = 150°C 10 100°C 1.4 VBE.3 -0.2 FORWARD 25°C +0. REVERSE VOLTAGE (VOLTS) Figure 8.3 2N3055A MJ15015 MJ15016 Cib 7 10 20 1.001 -0. MJ15015 +0.0 5.5 0. Turn–Off Times 500 1000 Figure 9.0 15 2.2 0.0 10 20 50 100 200 VR. COLLECTOR CURRENT (A) µ 10.3 +0.2 100 50 Cob 30 2 0.1 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.2 -0. COLLECTOR CURRENT (AMPS) 0.1 +0.5 0. COLLECTOR CURRENT (AMPS) 0 +0. CAPACITANCE (pF) t.5 0.0 1. Forward Bias Safe Operating Area MJ15015. BASE-EMITTER VOLTAGE (VOLTS) -0. MJ15016 20 2 FORWARD BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 ms dc 10 20 60 VCE.0 1.0ms 2.2 Figure 10.4 VBE.7 0.01 +0.1 -0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25°C 0. Capacitances COLLECTOR CUT–OFF REGION NPN 1000 VCE = 30 V 1000 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. TIME (s) µ 2N3055A MJ15015 MJ15016 ts 2 tf 0.01 25°C 0.10 7 5 400 3 200 TJ = 25°C C.2 100 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 Figure 12.1 0.com 29 120 . Forward Bias Safe Operating Area 2N3055A 100ms dc 20 30 60 100 VCE.7 1 3 5 IC. 2N3055A.0 0.1 0 -0. BASE-EMITTER VOLTAGE (VOLTS) 20 30 µs 100 µs 1 ms 5 1 -0.5 VCE = 30 V 100 10 TJ = 150°C 1. COLLECTOR CURRENT (AMP) IC.

. i. The data of Figures 12 and 13 is based on TC = 25C. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. the transistor must not be subjected to greater dissipation than the curves indicate. Safe Operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.com 30 . http://onsemi. TJ(pk) is variable depending on power level.e.2N3055A MJ15015 MJ15016 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

*ON Semiconductor Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS VCE(sat) = 1. 2 31 Publication Order Number: 2N3055/D . CASE TEMPERATURE (°C) 175 200 Figure 1. 2001 – Rev. designed for general–purpose switching and amplifier applications. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. . LLC.52 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. 2001 April.657 Watts W/C TJ. .ON Semiconductor NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Emitter Voltage VCER 70 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 7 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 115 0. Tstg –65 to +200 C Symbol Max Unit RθJC 1.  Semiconductor Components Industries. Junction to Case PD.

t = 1.0 Vdc) (IC = 10 Adc.5 Vdc) (VCE = 100 Vdc.5 Vdc. VCE = 4.0 Adc. f = 1.0 Vdc) VBE(on) — 1.0%.0 20 5.0 *OFF CHARACTERISTICS mAdc mAdc *ON CHARACTERISTICS (1) DC Current Gain (IC = 4. http://onsemi. IC = 1.1 3. VBE(off) = 1.5 — MHz *Small–Signal Current Gain (IC = 1.5 Vdc Is/b 2.com 32 .0 s.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4.7 mAdc Collector Cutoff Current (VCE = 100 Vdc. VBE(off) = 1.0 Adc. VCE = 4.0 5. f = 1. Nonrepetitive) DYNAMIC CHARACTERISTICS *Indicates Within JEDEC Registration. IB = 400 mAdc) (IC = 10 Adc. f = 1. IB = 0) VCEO(sus) 60 — Vdc Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc.0 Adc.0 Vdc.0 kHz) fhfe 10 — kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc. RBE = 100 Ohms) VCER(sus) 70 — Vdc Collector Cutoff Current (VCE = 30 Vdc. VCE = 10 Vdc.0 Vdc.0 Vdc. IB = 3.0 Emitter Cutoff Current (VBE = 7. VCE = 4.0 MHz) fT 2. IB = 0) ICEO — 0. VCE = 4.0 Adc.3 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 4. IC = 0) IEBO — 5. TC = 150C) ICEX — — 1.0 kHz) hfe 15 120 — *Small–Signal Current Gain Cutoff Frequency (VCE = 4.0 70 — — 1. Duty Cycle  2.2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc. (2N3055) (1) Pulse Test: Pulse Width  300 µs.5 Adc.87 — Adc Current Gain — Bandwidth Product (IC = 0.0 Adc.

COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 Figure 2. MJ2955 IC. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.com 33 . COLLECTOR CURRENT (AMP) 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.4 0. i.. Active Region Safe Operating Area http://onsemi. TJ(pk) is variable depending on power level. The data of Figure 2 is based on TC = 25C.2 BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 10 20 40 VCE. 50 µs dc 10 1 ms 6 4 500 µs 2 250 µs 1 0.2N3055 MJ2955 2N3055. the transistor must not be subjected to greater dissipation than the curves indicate. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.e.6 0.

0 10 . BASE CURRENT (mA) 1000 2000 5000 Figure 4. VOLTAGE (VOLTS) V. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .1 5. DC CURRENT GAIN 200 hFE .0 3.0 2.5 0.5 0.0 3.2 0 1.4 0. VOLTAGE (VOLTS) 1.0 TJ = 25°C TJ = 25°C 1.8 0.0 V TJ = 150°C 25°C 100 hFE .0 A 4.1 5.2 0.0 A 8. “On” Voltages http://onsemi.8 V.0 7.0 0.0 TJ = 25°C 1.8 0.0 IC.6 IC = 1.7 1.2 0.5 1.0 0.6 1.0 5.3 0. COLLECTOR CURRENT (AMP) 10 2. Collector Saturation Region 1.6 VBE @ VCE = 4.6 IC = 1.0 V 0.8 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3.2 0.0 5.0 10 20 50 100 200 500 IB.0 2.3 0.0 2. DC CURRENT GAIN VCE = 4.0 IC.3 0.0 A 1.1 IC.0 0 10 0.0 V 0. DC Current Gain 2.4 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4. COLLECTOR CURRENT (AMP) 70 -55°C 50 30 20 10 10 VCE = 4.0 A 4.com 34 3. COLLECTOR CURRENT (AMPERES) 0.0 0.7 1.0 V 0.0 3.2 VBE(sat) @ IC/IB = 10 0.4 2.0 10 20 50 100 200 500 IB.7 1. BASE CURRENT (mA) 1000 2000 5000 VCE .2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0.4 0 5.0 0.1 0.2 0.0 A 1.0 7.3 0.0 2.4 0 5.2 0. COLLECTOR CURRENT (AMP) Figure 5.2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 TJ = 150°C 25°C 100 -55°C 70 50 30 20 10 7.0 7.0 A 8.2 0.5 0.0 5.0 TJ = 25°C 1.0 IC.

Tstg –65 to +200 C Symbol Max Unit RθJC 1.0 — Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 117 0.5 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. ** This data guaranteed in addition to JEDEC registered data. 10 35 Publication Order Number: 2N3442/D . 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS • Collector –Emitter Sustaining Voltage — • VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol Value Unit VCEO 140 Vdc Collector–Base Voltage VCB 160 Vdc Emitter–Base Voltage VEB 7.67 Watts W/C TJ.0 Vdc Collector Current — Continuous Collector Current — Peak IC 10 15** Adc Base Current — Continuous Peak IB 7.ON Semiconductor 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers. Junction to Case * Indicates JEDEC Registered Data. 2001 March. series and shunt regulators and power switches.  Semiconductor Components Industries. 2001 – Rev. LLC.

0 Adc.4 0. IB = 2.0 Vdc.0 20 7.0 30 Emitter Cutoff Current (VBE = 7.0 Adc. IC = 0) IEBO — 5. VCE = 4.0%.5 Vdc.0 0. VBE(off) = 1. fT = |hfe| • ftest 1.5 Vdc) (VCE = 140 Vdc.2 0 0 25 50 75 100 125 150 TC. 2. VBE(off) = 1.8 0.2N3442 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 140 — Vdc Collector Cutoff Current (VCE = 140 Vdc.0 Vdc.5 70 — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 200 mAdc. ftest = 40 kHz) fT 80 — kHz Small–Signal Current Gain (IC = 2. f = 1.com 36 175 200 .0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 10 Adc.7 Vdc Current–Gain — Bandwidth Product (2) (IC = 2.0 kHz) hfe 12 72 — DYNAMIC CHARACTERISTICS PD /PD(MAX).0 Adc) VCE(sat) — 5. VCE = 4. IB = 0) mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3. VCE = 4. Duty Cycle  2.0 Adc. TC = 150C) ICEX — — 5. IB = 0) ICEO — 200 mAdc Collector Cutoff Current (VCE = 140 Vdc. VCE = 4. CASE TEMPERATURE (°C) Figure 1.0 Vdc) (IC = 10 Adc. Pulse Test: Pulse Width = 300 µs. POWER DISSIPATION (NORMALIZED) *Indicates JEDEC Registered Data.6 0. Power Derating http://onsemi. NOTES: 1.0 Vdc) VBE(on) — 5.0 Vdc Base–Emitter On Voltage (IC = 10 Adc. VCE = 4.0 Vdc.

2 0 2. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.0 4.0 1.0 A 4. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.7 1. The data of Figure 2 is based on TJ(pk) = 200C.0 3.0 10 VCE .8 0. BASE CURRENT (mA) 500 1.7 0.0 A 2.com 37 .. i.0 3.0 7. COLLECTOR CURRENT (AMP) 20 10 µs There are two limitations on the power–handling ability of a transistor: average junction temperature and second breakdown.5 0. 10 dc 7.1 0.0 2.0 10 20 30 VCE.e.0 100 µs TJ = 200°C CURRENT LIMIT THERMAL LIMIT @ TC = 25°C SINGLE PULSE SECOND BREAKDOWN LIMIT 0.0 5.0 0.2 0. COLLECTOR CURRENT (AMP) 5.0 50 µs 2. DC Current Gain TJ = 25°C 5. DC CURRENT GAIN 200 100 25°C 60 VCE = 4. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2.0 A 8. Collector–Saturation Region http://onsemi.2N3442 ACTIVE REGION SAFE OPERATING AREA INFORMATION IC.0k Figure 4.0 10 20 50 100 200 IB.0 V -55°C 40 20 10 6.0k 2. TC is variable depending on conditions.5 0. the transistor must not be subjected to greater dissipation than the curves indicate.0 A 1.0 Figure 3.0 IC.0 ms 100 ms 50 70 100 5.0 1.0 7. 2N3442 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 400 TJ = 150°C hFE.4 1. At high case temperatures.6 0.3 0.2 IC = 1.4 0.0 30 µs 3.3 0.2 2.0 0.

ON Semiconductor 2N3771* 2N3772 High Power NPN Silicon Power Transistors . 2001 March. CASE TEMPERATURE (°C) 175 200 Figure 1. and inductive switching applications.  Semiconductor Components Industries.0 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 150 0. 200 PD. series pass regulators. LLC.17 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristics Thermal Resistance.5 15 5. . .75 Adc @ VCE = 40 Vdc — 2N3771 = 2.5 Adc @ VCE = 60 Vdc — 2N3772 *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit Collector–Emitter Voltage VCEO 40 60 Vdc Collector–Emitter Voltage VCEX 50 80 Vdc Collector–Base Voltage VCB 50 100 Vdc Emitter–Base Voltage VEB 5. POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC. 2N3772 Unit θJC 1. designed for linear amplifiers.0 Vdc Collector Current — Continuous Peak IC 30 30 20 30 Adc Base Current — Continuous Peak IB 7. Tstg –65 to +200 C Symbol 2N3771.855 Watts W/C TJ. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 7. 2001 – Rev. Junction to Case *Indicates JEDEC Registered Data. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ IS/b = 3. 9 38 Publication Order Number: 2N3771/D .

VCE = 4.0 Vdc. VEB(off) = 1. VCE = 4.0 — — 5. RBE = 100 Ohms) 2N3771 2N3772 VCER(sus) 45 70 — — Vdc *Collector Cutoff Current (VCE = 30 Vdc. VEB(off) = 1.5 Vdc) (VCE = 30 Vdc. VEB(off) = 1.0 2N3771 2N3772 15 15 60 60 2N3771 2N3772 5.0 Vdc) (IC = 20 Adc. IC = 0) (VBE = 7.0 Adc) (IC = 30 Adc.2 — MHz Small–Signal Current Gain (IC = 1. VEB(off) = 1. TC = 150C) *Collector Cutoff Current (VCB = 50 Vdc.5 Vdc. TC = 150C) mAdc ICEV 2N3771 2N3772 2N6257 2N3771 2N3772 mAdc (VCE = 45 Vdc.0 Vdc) (IC = 10 Adc. IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0.0 Vdc) (IC = 10 Adc. ftest = 50 kHz) fT 0.2N3771 2N3772 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS *Collector–Emitter Sustaining Voltage (1) (IC = 0.0 — — 2.0 Adc) — VCE(sat) 2N3771 2N3772 2N3771 2N3772 Base–Emitter On Voltage (IC = 15 Adc. IB = 0) 2N3771 2N3772 — — 10 10 — — — — — 2. t = 1.0 Adc. IC = 0) 2N3771 2N3772 mAdc IEBO mAdc *ON CHARACTERISTICS DC Current Gain (1) (IC = 15 Adc.0 4.0 s (non–repetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc) *Indicates JEDEC Registered Data. (1) Pulse Test: 300 µs.0 Adc. IB = 1.0 Vdc) (IC = 8.com 39 IS/b Adc .5 Vdc.0 4. IB = 6. VCE = 4.0 5.0 Adc.2 Adc.5 Vdc) (VCE = 45 Vdc. VCE = 4.0 5.0 Vdc. Rate 60 cps. VCE = 4. VCE = 4.0 kHz) hfe 40 — — 3.0 5.0 — — — — — — 2.0 Adc) (IC = 20 Adc.0 5. IB = 1. Rep. IE = 0) 2N3771 2N3772 ICBO *Emitter Cutoff Current (VBE = 5. RBE = 100 Ohms) 2N3771 2N3772 VCEX(sus) 50 80 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0. IE = 0) (VCB = 100 Vdc. IB = 4.0 Vdc. VEB(off) = 1.75 2.5 Adc) (IC = 10 Adc.0 Vdc.2 ICEO *Collector Cutoff Current (VCE = 50 Vdc.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 15 Adc.7 2. http://onsemi.0 Vdc) Vdc VBE(on) 2N3771 2N3772 Vdc *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.5 Vdc.5 Vdc) (VCE = 100 Vdc. VCE = 4. IB = 0) (VCE = 50 Vdc.0 Vdc) (IC = 8. f = 1. VCE = 4.0 Vdc) (IC = 30 Adc.4 4.5 — — SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased. IB = 0) (VCE = 25 Vdc. VEB(off) = 1.0 1. VCE = 4. VCE = 4.2 Adc.0 Adc.0 10 10 — — 2.2 Adc.

5 0.01 0.0 0.05 0.0 V 1.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.e.01 0.com 40 20 30 . COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 Figure 3.5 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .05 SINGLE PULSE 0.r(t).7 1. 2N3772 VCC +30 V 10 5.0 2.5 D = 0.0 THERMALLY LIMITED 5. e.0 5.0 2. tf ≤ 10 ns DUTY CYCLE = 1.1 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.TC = P(pk) θJC(t) DUTY CYCLE. Thermal Response — 2N3771. 2N3772.g.0 7.0% VBE(off) = 5.0 VCC = 30 IC/IB = 10 TJ = 25°C tr 0..7 0.2 0.5 1. TJ(pk) may be calculated from the data of Figure 2. it is permissible to increase the pulse power limits until limited by T J(max). When using ON Semiconductor transistors.0 20 30 VCE. TIME (ms) 20 50 100 200 500 1000 2000 Figure 2.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2.03 0.1 0.02 D1 MUST BE FAST RECOVERY TYPE.0 t.2 0. D = t1/t2 0.5 0.0 10 t.3 0.02 0.01 0.0 10 50 70 100 1.0 0. Active–Region Safe Operating Area — 2N3771.0 ms BONDING WIRE LIMITED 7. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N3771 2N3772 1.0 25 µs RC SCOPE RB 0 D1 51 -9.0 7. Figure 3 is based on JEDEC registered Data.0 V tr.0 2. Switching Time Test Circuit 3.2 0.1 0. Using data of Figure 2 and the pulse power limits of Figure 3. TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less.2 0.3 Figure 4.07 0. TIME (s) µ +11 V 2.02 0. 2N3772 40 IC.02 P(pk) θJC(t) = r(t) θJC θJC = 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C.0 3. COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.0 5.1 -4 V td 0.0 10 IC.05 0. (dc) 100 µs dc 200 µs TC = 25°C 1.0 5. Turn–On Time http://onsemi. the transistor must not be subjected to greater dissipation than the curves indicate.05 RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0. COLLECTOR CURRENT (AMP) Figure 5.

4 0 0.0 1.5 tf 1000 Cib 700 Cob 500 300 0.0 3.0 Figure 9.0 5. Collector Saturation Region Figure 8.0 7.0 0.02 0.2N3771 2N3772 100 2000 20 t.5 1.0 2. Capacitance 500 300 200 50 2.7 1.01 0.5 1.5 0.com 41 10 .0 5.0 5.05 0. REVERSE VOLTAGE (VOLTS) 0.1 30 0.6 TJ = 25°C IC = 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C 100 Figure 7.3 TJ = 25°C 0.2 0.0 A 10 A 20 A 1.0 7.0 V 25°C 100 70 50 -55°C 30 20 10 7.5 1.0 10 20 VR.0 0.2 Figure 6.0 3.1 0.0 2. TIME (s) µ 10 C.0 2. CAPACITANCE (pF) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 50 5.1 0.8 0.2 IC.0 5.0 0.0 A 5.0 10 IC.0 2. COLLECTOR CURRENT (AMP) 20 30 VCE .3 0. Turn–Off Time hFE .0 2. DC CURRENT GAIN VCE = 4. DC Current Gain http://onsemi. COLLECTOR CURRENT (AMP) 5.0 10 IC. COLLECTOR CURRENT (AMP) 20 200 0.0 ts 1.2 0.

2001 March.75 Adc @ VCE = 40 Vdc — 2N3771 = 2.0 Vdc Collector Current — Continuous Peak IC 30 30 20 30 Adc Base Current — Continuous Peak IB 7. and inductive switching applications.5 Adc @ VCE = 60 Vdc — 2N3772 *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit Collector–Emitter Voltage VCEO 40 60 Vdc Collector–Emitter Voltage VCEX 50 80 Vdc Collector–Base Voltage VCB 50 100 Vdc Emitter–Base Voltage VEB 5. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 2001 – Rev. . designed for linear amplifiers. Tstg –65 to +200 C Symbol 2N3771. 9 42 Publication Order Number: 2N3771/D .  Semiconductor Components Industries.0 7.5 15 5.855 Watts W/C TJ. LLC. Junction to Case *Indicates JEDEC Registered Data. 2N3772 Unit θJC 1. POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC. CASE TEMPERATURE (°C) 175 200 Figure 1. .17 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristics Thermal Resistance.0 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 150 0.ON Semiconductor 2N3771* 2N3772 High Power NPN Silicon Power Transistors . series pass regulators. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ IS/b = 3. 200 PD.

VEB(off) = 1. VEB(off) = 1.0 Vdc.5 Vdc) (VCE = 30 Vdc.0 Vdc) (IC = 10 Adc.0 5.2 Adc. Rate 60 cps.2 Adc.0 s (non–repetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc) *Indicates JEDEC Registered Data. IB = 6.0 Vdc) (IC = 8. IE = 0) (VCB = 100 Vdc. t = 1.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 15 Adc. f = 1.0 Vdc) (IC = 30 Adc.0 Vdc. http://onsemi. VEB(off) = 1.0 Adc) (IC = 20 Adc. RBE = 100 Ohms) 2N3771 2N3772 VCER(sus) 45 70 — — Vdc *Collector Cutoff Current (VCE = 30 Vdc. VCE = 4. IE = 0) 2N3771 2N3772 ICBO *Emitter Cutoff Current (VBE = 5. ftest = 50 kHz) fT 0.0 Vdc) (IC = 8.5 Vdc) (VCE = 100 Vdc. Rep.2 — MHz Small–Signal Current Gain (IC = 1.0 Adc.2 ICEO *Collector Cutoff Current (VCE = 50 Vdc. IB = 0) (VCE = 25 Vdc. VCE = 4.0 5. VCE = 4. VCE = 4. VCE = 4. VCE = 4. VCE = 4.5 Vdc.5 Vdc.0 4.7 2. TC = 150C) *Collector Cutoff Current (VCB = 50 Vdc.0 4.0 Vdc) Vdc VBE(on) 2N3771 2N3772 Vdc *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1. TC = 150C) mAdc ICEV 2N3771 2N3772 2N6257 2N3771 2N3772 mAdc (VCE = 45 Vdc. IB = 1.2N3771 2N3772 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS *Collector–Emitter Sustaining Voltage (1) (IC = 0.0 10 10 — — 2.0 — — 2.0 Vdc) (IC = 20 Adc. VCE = 4. VEB(off) = 1.com 43 IS/b Adc .0 Vdc) (IC = 10 Adc.0 — — 5.2 Adc.0 Vdc. IC = 0) 2N3771 2N3772 mAdc IEBO mAdc *ON CHARACTERISTICS DC Current Gain (1) (IC = 15 Adc. RBE = 100 Ohms) 2N3771 2N3772 VCEX(sus) 50 80 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0.0 — — — — — — 2.0 1. VEB(off) = 1.0 Adc.5 Vdc. (1) Pulse Test: 300 µs.0 kHz) hfe 40 — — 3.0 5.5 — — SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased. IB = 0) (VCE = 50 Vdc. IB = 1.75 2.0 2N3771 2N3772 15 15 60 60 2N3771 2N3772 5.4 4. VCE = 4.0 Adc.0 Adc) — VCE(sat) 2N3771 2N3772 2N3771 2N3772 Base–Emitter On Voltage (IC = 15 Adc. IB = 4.0 Vdc.0 Adc) (IC = 30 Adc. IB = 0) 2N3771 2N3772 — — 10 10 — — — — — 2. VEB(off) = 1. IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0.0 Adc. IC = 0) (VBE = 7. VCE = 4.5 Vdc) (VCE = 45 Vdc.5 Adc) (IC = 10 Adc.0 5.

0 THERMALLY LIMITED 5.r(t).0 2.. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.7 0.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.TC = P(pk) θJC(t) DUTY CYCLE. Thermal Response — 2N3771. TIME (s) µ +11 V 2.0 VCC = 30 IC/IB = 10 TJ = 25°C tr 0.0 5.1 0. Turn–On Time http://onsemi. 2N3772 40 IC.0 25 µs RC SCOPE RB 0 D1 51 -9.0 7.02 0.3 0.2 0.0% VBE(off) = 5.05 0.05 SINGLE PULSE 0.02 P(pk) θJC(t) = r(t) θJC θJC = 0.0 t.0 20 30 VCE.0 7. Using data of Figure 2 and the pulse power limits of Figure 3. TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less.0 3.0 0.5 0. COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. tf ≤ 10 ns DUTY CYCLE = 1.5 0.1 0. TIME (ms) 20 50 100 200 500 1000 2000 Figure 2.0 0.01 0.01 0. it is permissible to increase the pulse power limits until limited by T J(max).2 0.02 D1 MUST BE FAST RECOVERY TYPE. D = t1/t2 0.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.03 0. e.1 -4 V td 0.0 10 IC.0 10 t.3 Figure 4.05 RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.0 V tr.05 0.0 5. COLLECTOR CURRENT (AMP) Figure 5. Figure 3 is based on JEDEC registered Data.02 0.7 1. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N3771 2N3772 1.g.2 0.1 0. When using ON Semiconductor transistors.0 2.0 V 1. (dc) 100 µs dc 200 µs TC = 25°C 1.5 1.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) . Switching Time Test Circuit 3. 2N3772 VCC +30 V 10 5.5 D = 0.07 0.e.01 0.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. Active–Region Safe Operating Area — 2N3771. TJ(pk) may be calculated from the data of Figure 2. 2N3772.2 0.0 ms BONDING WIRE LIMITED 7. the transistor must not be subjected to greater dissipation than the curves indicate.com 44 20 30 .0 10 50 70 100 1.5 0.0 2.0 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 Figure 3.

7 1.0 10 IC.1 0.0 1. CAPACITANCE (pF) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 50 5.0 2.3 0.0 7.0 7.0 2. Collector Saturation Region Figure 8.0 2.com 45 10 .0 0.0 3.1 30 0.5 1.0 V 25°C 100 70 50 -55°C 30 20 10 7.0 5. COLLECTOR CURRENT (AMP) 5.5 tf 1000 Cib 700 Cob 500 300 0.5 0. DC Current Gain http://onsemi.0 2.1 0.0 A 10 A 20 A 1. Capacitance 500 300 200 50 2.2 0. DC CURRENT GAIN VCE = 4. REVERSE VOLTAGE (VOLTS) 0.0 3.0 2.3 TJ = 25°C 0.0 ts 1.6 TJ = 25°C IC = 2.2 0. Turn–Off Time hFE .0 5.5 1.2 Figure 6.4 0 0.0 A 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C 100 Figure 7.05 0.0 5.0 10 IC.8 0.0 0. COLLECTOR CURRENT (AMP) 20 30 VCE .0 5.0 Figure 9.2 IC.0 10 20 VR.2N3771 2N3772 100 2000 20 t.02 0.0 0. COLLECTOR CURRENT (AMP) 20 200 0.5 1.01 0. TIME (s) µ 10 C.

dc to dc converters or inverters. 2001 March. Tstg –65 to +200 C Symbol Max Unit RθJC 1.855 Watts W/C TJ. (1) Pulse Test: Pulse Width = 5 ms.8 A For Low Distortion Complementary Designs CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 140 Vdc Collector–Emitter Voltage VCEX 160 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector Current — Continuous — Peak (1) IC 16 30 Adc Base Current — Continuous — Peak (1) IB 4 15 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 150 0. 4 V VCE(sat) = 1. 2001 – Rev.4 V (Max) @ IC = 8 A. These devices can also be used in power switching circuits such as relay or solenoid drivers. disk head positioners and other linear applications. 2N6609 *ON Semiconductor Preferred Device 16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS • High Safe Operating Area (100% Tested) 150 W @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage • PNP hFE = 15 (Min) @ 8 A. LLC. 9 46 Publication Order Number: 2N3773/D . Duty Cycle  10%.17 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case *Indicates JEDEC Registered Data.  Semiconductor Components Industries. IB = 0.ON Semiconductor NPN 2N3773 * Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

VBE(off) = 1.2 Adc) VCE(sat) Vdc *Base–Emitter On Voltage (IC = 8 Adc. IB = 0) VCEO(sus) 140 — Vdc *Collector–Emitter Sustaining Voltage (IC = 0. f = 1 kHz) hfe 40 — — IS/b 1.1 Adc. http://onsemi. VCE = 4 Vdc) (IC = 16 Adc. RBE = 100 Ohms) VCEX(sus) 160 — Vdc Collector–Emitter Sustaining Voltage (IC = 0.2 Adc. Duty Cycle  2%. *Indicates JEDEC Registered Data. IE = 0) ICBO — 2 mAdc *Emitter Cutoff Current (VBE = 7 Vdc. VBE(off) = 1.5 Vdc. RBE = 100 Ohms) VCER(sus) 150 — Vdc *Collector Cutoff Current (VCE = 120 Vdc. VCE = 100 V. See Figure 12 (2) Pulse Test: Pulse Width = 300 µs. Forward Current Transfer Ratio (IC = 1 A. IB = 800 mAdc) (IC = 16 Adc.com 47 . IB = 0) ICEO — 10 mAdc *Collector Cutoff Current (VCE = 140 Vdc. Short–Circuit.2 Vdc Magnitude of Common–Emitter Small–Signal. IB = 3.4 4 OFF CHARACTERISTICS (2) mAdc ON CHARACTERISTICS (2) DC Current Gain *(IC = 8 Adc.2 Adc. f = 50 kHz) |hfe| 4 — — *Small–Signal Current Gain (IC = 1 Adc. VCE = 4 Vdc) VBE(on) — 2.5 — Adc DYNAMIC CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (non–repetitive). VCE = 4 Vdc. TC = 150C) ICEX — — 2 10 Collector Cutoff Current (VCB = 140 Vdc.5 Vdc) (VCE = 140 Vdc. VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage *(IC = 8 Adc.5 Vdc. IC = 0) IEBO — 5 mAdc 15 5 60 — — — 1. VBE(off) = 1.2N3773 2N6609 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit *Collector–Emitter Breakdown Voltage (IC = 0.

0 5.4 25°C 25°C VCE(sat) 0. VOLTAGE (VOLTS) 2. VOLTAGE (VOLTS) 1.0 3. COLLECTOR CURRENT (AMPS) IC.5 0.2N3773 2N6609 NPN 300 200 PNP 300 200 150°C 150°C 100 100 -55°C 25°C 70 hFE .1 Figure 12.0 2.3 7.07 0.0 IC.6 IC = 4 A IC = 16 A 1.6 V.0 7.0 2.0 2.0 IB.0 5.5 0.2 0.0 Figure 13.8 20 Figure 11.0 7. DC Current Gain 10 VBE(sat) 0.5 0.1 0.7 1. COLLECTOR CURRENT (AMPS) Figure 14.0 IC.0 2.0 0.0 IC.0 3.2 0.6 IC = 4 A 1.2 0.3 0.7 1.5 0.07 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10.5 0.0 3. “On” Voltage http://onsemi.2 0. DC CURRENT GAIN 25°C 50 VCE = 4 V 30 20 50 30 20 10 10 7.2 VBE(sat) 0.7 1.0 2.0 3.0 2.5 0.7 1.8 0.0 5.3 0.7 1.05 0. Collector Saturation Region 2.8 25°C 150°C 150°C 0. DC CURRENT GAIN hFE . BASE CURRENT (AMPS) 5.3 0. COLLECTOR CURRENT (AMPS) 2.4 TC = 25°C 0 0.7 1.3 25°C 150°C 150°C VCE(sat) 1. COLLECTOR CURRENT (AMPS) 10 -55°C 70 VCE = 4 V 5.4 0 0. Collector Saturation Region 0.0 7.3 20 0.0 1.0 7.0 3.0 1.2 IC = 8 A 0.2 0.8 0.0 5. DC Current Gain VCE .0 0. BASE CURRENT (AMPS) 2.0 3.05 0.4 TC = 25°C 0 0.2 0.0 10 20 0.0 0.0 IC/IB = 10 IC/IB = 10 1.0 1.2 IC = 8 A IC = 16 A 0.com 48 10 20 . COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .2 0.6 V.0 IB. “On” Voltage Figure 15.0 5.

Power Derating http://onsemi. SINGLE PULSE SECOND BREAKDOWN LIMIT 0.0 200 300 5. The data of Figure 7 is based on TJ(pk) = 200C..com 49 160 200 .0 10 20 30 50 70 100 VCE. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 0.0 ms dc 100 ms 1. COLLECTOR CURRENT (AMP) 30 20 10 µs 40 µs 10 5. CASE TEMPERATURE (°C) Figure 17. TC is variable depending on conditions. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.03 3. At high case temperatures.2N3773 2N6609 IC.05 0.0 0.0 100 µs 200 µs 1. POWER DERATING FACTOR (%) 100 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 16.2 500 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C.0 2. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.0 3.0 7.5 0.1 0. the transistor must not be subjected to greater dissipation than the curves indicate.e.

.0 Amp Complement to NPN 2N4921.0 Amp Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25C Excellent Safe Operating Area Gain Specified to IC = 1. The 3. 2001 – Rev. 2001 March.24 Watts W/C TJ. Tstg –65 to +150 C Collector–Emitter Voltage Operating & Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance.6 Vdc (Max) @ IC = 1.ON Semiconductor 2N4918 thru 2N4920 * Medium-Power Plastic PNP Silicon Transistors . 2N4923 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Ratings Symbol 2N4918 2N4919 2N4920 Unit VCEO 40 60 80 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5. (2) Recommend use of thermal compound for lowest thermal resistance.0 Amp maximum value is based upon actual current–handling capability of the device (See Figure 5).0 Adc Base Current IB 1. These high–performance plastic devices feature: *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS • Low Saturation Voltage — • • • • VCE(sat) = 0.0 Amp maximum IC value is based upon JEDEC current gain requirements. .16 C/W *Indicates JEDEC Registered Data for 2N4918 Series. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Junction to Case Symbol Max Unit θJC 4. LLC.  Semiconductor Components Industries.0 3. switching. 2N4922. 9 50 Publication Order Number: 2N4918/D . designed for driver circuits.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25C PD 30 0.0 Vdc Collector Current — Continuous (1) IC* 1. and amplifier applications. (1) The 1.

com 51 125 150 . CASE TEMPERATURE (°C) Figure 1. POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC. Power Derating http://onsemi.2N4918 thru 2N4920 PD.

Duty Cycle  2. VCE = 1.07 0.2N4918 thru 2N4920 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 — — — — — — 0. IE = 0.0 t2 Vin APPROX -11 V 0 RB t3 TURN-OFF PULSE t1 < 15 ns 100 < t2 < 500 µs t3 < 15 ns IC/IB = 10.0 MHz) Output Capacitance (VCB = 10 Vdc.0 RC t.5 0.1 0.com 52 VCC = 60 V 500 700 1000 .7 0.5 0. IE = 0) ICBO — 0.5 0. VBE(off) = 1. VCE = 10 Vdc.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc) VBE(on) — 1.2 0.0% VCC = 30 V tr td VCC = 60 V VBE(off) = 2. TC = 125C) ICEX mAdc Collector Cutoff Current (VCB = Rated VCB. VCE = 1. f = 100 kHz) Cob — 100 pF Small–Signal Current Gain (IC = 250 mAdc.0 Vdc) (IC = 500 mAdc.3 Vdc fT 3.0% VBE(off) APPROX -11 V VCC Vin t1 2.6 Vdc Base–Emitter Saturation Voltage (1) (IC = 1. IB = 0) (VCE = 30 Vdc.1 0.0 V RB and RC varied to obtain desired current levels 1.0 kHz) hfe 25 — — *Indicates JEDEC Registered Data.0 0 +4. IB = 0) (VCE = 40 Vdc.0 Vdc) hFE — Collector–Emitter Saturation Voltage (1) (IC = 1. COLLECTOR CURRENT (mA) Figure 3. f = 1.5 — — 0.3 0.1 Adc) VBE(sat) — 1.0 Vdc.5 Vdc. TIME (s) µ Vin 5. IB = 0) VCEO(sus) 2N4918 2N4919 2N4920 Collector Cutoff Current (VCE = 20 Vdc. VBE(off) = 1. VCE = 1.0 — MHz SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 250 mAdc.0 V VCC = 30 V VBE(off) = 0 10 Figure 2.1 Adc) VCE(sat) — 0. UNLESS NOTED TJ = 25°C TJ = 150°C SCOPE Cjd<<Ceb APPROX 9.0 Vdc) (IC = 1. IB = 0. (1) Pulse Test: PW  300 µs. VCE = 1.1 Adc.05 DUTY CYCLE ≈ 2.5 Vdc) (VCE = Rated VCEO.0 Adc. Switching Time Equivalent Test Circuit 20 30 50 70 100 200 300 IC. IB = 0) Vdc ICEO 2N4918 2N4919 2N4920 mAdc Collector Cutoff Current (VCE = Rated VCEO. f = 1. IB = 0.0 Adc.3 Vdc Base–Emitter On Voltage (1) (IC = 1.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0. IC = 0) IEBO — 1.0 0.0 Adc.0 Adc. Turn–On Time http://onsemi. VCE = 10 Vdc.0 mAdc 40 30 10 — 150 — ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc.0 V VCC = 30 V IC/IB = 20 3.

Safe operating area curves indicate IC – VCE operation i.7 0. the transistor must not be subjected to greater dissipation than the curves indicate.com 53 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2 500 700 1000 . The data of Figure 5 is based on TJ(pk) = 150C.0 ms 5.03 0.7 0.e.0 2.r(t).2 0.1 0.0 1. Thermal Response IC.1 P(pk) θJC(t) = r(t) θJC θJC = 4. COLLECTOR CURRENT (mA) t f .2 0.3 0..0 0.0 3.07 0.0 3.3 0. COLLECTOR CURRENT (AMP) 10 TJ = 150°C 2.0 5.07 0.5 1.0 7.1 0.05 0.1/8 tf TJ = 25°C TJ = 150°C IB1 = IB2 10 20 30 200 300 50 70 100 IC. FALL TIME (s) µ t s′.05 3. COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5.0 1.0 2. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.0 0.0 IC/IB = 20 IC/IB = 20 2.2 0.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.2 0.2 0.01 0.02 0.7 0.1 0.01 0.3 0. At high case temperatures.0 ms 5.0 5.0 10 20 30 50 VCE.5 PULSE CURVES APPLY BELOW RATED VCEO 0.1 1.05 0.05 10 20 30 50 70 100 200 300 IC. COLLECTOR CURRENT (mA) Figure 7. dc 1.1 0.01 0.5 500 700 1000 IC/IB = 10 0. Fall Time Figure 6. STORAGE TIME (s) µ 3.0 ts′ = ts .2 0.0 5. D = t1/t2 0.0 2.0 100 µs 1.0 t.5 0.5 0.05 0.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25°C 0. Active–Region Safe Operating Area 5.02 0.03 SINGLE PULSE 0. TC is variable depending on conditions.TC = P(pk) θJC(t) DUTY CYCLE.0 IC/IB = 10 0.3 0.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) . thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4.5 D = 0. Storage Time http://onsemi. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4918 thru 2N4920 1.07 0.

4 +2.2 106 VOLTAGE (VOLTS) RBE .1 +0. Collector Saturation Region IC ≈ ICES 105 IC = 2x ICES ICES VALUES OBTAINED FROM FIGURE 13 104 0 30 60 TJ = 25°C 0.5 θVB FOR VBE -2.5 +1.0 3. DC CURRENT GAIN 1000 700 500 VCE . COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL DC CHARACTERISTICS VCE = 1. BASE-EMITTER VOLTAGE (VOLTS) IC.0 5.0 10 20 30 50 100 200 300 500 IC.1 25°C FORWARD 0 +0.2 0.3 VCE(sat) @ IC/IB = 10 90 120 0 2.0 IC = 0.9 0.5 TEMPERATURE COEFFICIENTS (mV/ °C) IC.0V 2 10 20 30 50 100 200 300 500 1000 2000 VBE.1 A 0.0 +0.com 54 .0 5. JUNCTION TEMPERATURE (°C) IC.5 -1.0 10 20 30 IB.8 108 TJ = 25°C 0. Temperature Coefficients http://onsemi. Collector Cut–Off Region Figure 13.0 -2. Current Gain 103 0. Effects of Base–Emitter Resistance Figure 11.2N4918 thru 2N4920 hFE.0 5.5 *θVC FOR VCE(sat) 0 TJ = -55°C to +100°C -0.5 2.6 Figure 8.0 *APPLIES FOR IC/IB < +1.2 VCE = 30 V +0.25 A 101 TJ = 150°C 100 10-1 100°C 10-2 IC = ICES 104 REVERSE 103 -0. COLLECTOR CURRENT (A) µ 0.0 -1.5 hFE@VCE  1. “On” Voltage 102 +2.5 1.0 2.0 A Figure 9.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.3 0.0 3.3 +0.4 0.0 3.5 VCE = 30 V IC = 10 ICES 107 1.2 -0. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 1.0 TJ = 100°C to 150°C +0.0 150 10 20 30 50 100 200 300 500 1000 2000 TJ. COLLECTOR CURRENT (mA) Figure 10.0 V TJ = 150°C 300 200 25°C 100 70 50 -55°C 30 20 10 2.0 5. COLLECTOR CURRENT (mA) Figure 12. COLLECTOR CURRENT (mA) 1000 2000 1.0 3.2 0 0.5 A 0. BASE CURRENT (mA) 100 50 200 1.0 V 0.

0 Vdc Collector Current — Continuous (1) IC 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25C Excellent Safe Operating Area Gain Specified to IC = 1.0 Adc Base Current — Continuous IB 1. Junction to Case Symbol Max Unit θJC 4. Tstg –65 to +150 C Collector–Emitter Voltage Operating & Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance. . .0 Amp maximum IC value is based upon JEDEC current gain requirements. *Indicates JEDEC Registered Data. 2N4920 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N4921 2N4922 2N4923 Unit VCEO 40 60 80 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 30 0.16 C/W (1) The 1.  Semiconductor Components Industries. switching. 9 55 Publication Order Number: 2N4921/D .0 3. LLC.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6) (2) Recommend use of thermal compound for lowest thermal resistance. 2N4919.0 Amp Complement to PNP 2N4918. The 3. and amplifier applications. designed for driver circuits. These high–performance plastic devices feature: *ON Semiconductor Preferred Device • Low Saturation Voltage — • • • • 1 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS VCE(sat) = 0.6 Vdc (Max) @ IC = 1. 2001 – Rev.24 Watts W/C TJ.ON Semiconductor 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . 2001 March.

com 56 . CASE TEMPERATURE (°C) 125 150 Figure 1.2N4921 thru 2N4923 PD. POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC. All limits are applicable and must be observed. http://onsemi. Power Derating Safe Area Curves are indicated by Figure 5.

0 Vdc) (IC = 1.0 — MHz SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 250 mAdc.07 RB and RC varied to 0.0 Adc. IE = 0) ICBO — 0.2N4921 thru 2N4923 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 — — — — — — 0.0 V t2 TURN-OFF PULSE VCC = 30 V IC/IB = 20 3.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (3) (IC = 0.0 0. f = 1.5 0. IC = 0) IEBO — 1.0% 0.0 MHz) Output Capacitance (VCB = 10 Vdc.1 DUTY CYCLE ≈ 2.6 Vdc Base–Emitter Saturation Voltage (3) (IC = 1.1 Adc.0 RC -4. COLLECTOR CURRENT (mA) Figure 3. Turn–On Time http://onsemi. IE = 0. IB = 0) Vdc ICEO mAdc 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = Rated VCEO. VCE = 1.1 0. f = 1. IB = 0) VCEO(sus) 2N4921 2N4922 2N4923 Collector Cutoff Current (VCE = 20 Vdc.3 Vdc Base–Emitter On Voltage (3) (IC = 1.0 Vdc) hFE — Collector–Emitter Saturation Voltage (3) (IC = 1.0 Adc.7 0. Vin TURN-ON PULSE 5.1 mAdc Emitter Cutoff Current (VEB = 5. VEB(off) = 1.0 Vdc) (IC = 500 mAdc. IB = 0) (VCE = 40 Vdc.0 Adc. f = 100 kHz) Cob — 100 pF Small–Signal Current Gain (IC = 250 mAdc. IB = 0. IB = 0) (VCE = 30 Vdc. TIME (s) µ APPROX +11 V 1.1 Adc) VCE(sat) — 0.0 mAdc 40 30 10 — 150 — ON CHARACTERISTICS DC Current Gain (3) (IC = 50 mAdc. VCE = 10 Vdc.com 57 500 700 1000 .5 Vdc.3 Vdc fT 3.3 0.2 0. IB = 0.5 — — 0.0 V t1 ≤ 15 ns 100 < t2 ≤ 500 µs t3 ≤ 15 ns t.0 V VCC = 30 V VBE(off) = 0 10 Figure 2.05 obtain desired current levels IC/IB = 10.5 0. Duty Cycle ≈ 2.0 Adc.5 0. TC = 125C) ICEX mAdc Collector Cutoff Current (VCB = Rated VCB.0 Vdc) VBE(on) — 1.5 Vdc) (VCE = Rated VCEO. *Indicates JEDEC Registered Data.0%.0 Vdc. VEB(off) = 1. VCE = 10 Vdc. UNLESS NOTED TJ = 25°C TJ = 150°C VCC = 60 V td VCC = 30 V tr VCC = 60 V VBE(off) = 2. VCE = 1. VCE = 1.0 kHz) hfe 25 — — (3) Pulse Test: PW ≈ 300 µs.1 Adc) VBE(sat) — 1. Switching Time Equivalent Circuit 20 30 50 70 100 200 300 IC.0 t1 VCC Vin VBE(off) 2. VCE = 1.0 RB Cjd<<Ceb APPROX +11 V t3 SCOPE Vin APPROX 9.

0 TJ = 150°C 1.3 0. At high case temperatures.0 ms 3.0 2.02 0.0 5.1 0.5 D = 0.0 7.0 10 20 30 50 VCE.0 5.05 IC/IB = 20 TJ = 25°C TJ = 150°C IB1 = IB2 ts′ = ts .0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.2 0. Active–Region Safe Operating Area 5.0 5.2 0.2 0.3 0.07 0.5 1.3 0.0 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5.0 5.0 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4921 thru 2N4923 1. STORAGE TIME (s) µ 3. Safe operating area curves indicate IC – VCE operation i.0 1.0 ms dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C PULSE CURVES APPLY BELOW RATED VCEO 2.0 0. Thermal Response IC.com 58 500 700 1000 .e.0 2.07 0.05 500 700 1000 IC/IB = 10 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2 10 Figure 6. Storage Time 20 30 50 70 100 200 300 IC.0 IC/IB = 20 2.7 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.r(t).01 0.03 P(pk) θJC(t) = r(t) θJC θJC = 4. FALL TIME (s) µ t s′. COLLECTOR CURRENT (mA) IC/IB = 20 2.0 3.1 0.2 0.5 0. 100 µs 1..1 0.5 0. COLLECTOR CURRENT (AMP) 10 7. Fall Time http://onsemi.0 0.7 0. COLLECTOR CURRENT (mA) Figure 7.TC = P(pk) θJC(t) DUTY CYCLE.0 0.1 0.0 3.07 0.05 0. The data of Figure 5 is based on TJ(pk) = 150C.1 0.0 5.05 0.0 t.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .3 0.1 1.5 0.0 3. the transistor must not be subjected to greater dissipation than the curves indicate.01 SINGLE PULSE 0.0 t f .7 0.01 0.2 0.1/8 tf 10 20 30 200 300 50 70 100 IC.2 0.05 0.7 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C. TC is variable depending on conditions.3 0.02 0. D = t1/t2 0.03 0. TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4.5 IC/IB = 10 0.

0 -2. BASE CURRENT (mA) 50 100 200 1. BASE-EMITTER VOLTAGE (VOLTS) 10 20 30 50 100 200 300 500 IC.com 59 1000 2000 . EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0. Current Gain 103 IC = 0. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance Figure 11.0 TJ = 100°C to 150°C +0.5 θVB FOR VBE -2.0 3.25 A 0.5 1.5 +1.5 hFE@VCE  1. DC CURRENT GAIN 1000 700 500 VCE .9 0.3 0.1 +0. COLLECTOR CURRENT (mA) Figure 12.1 FORWARD 0 +0.0 A TJ = 25°C 0.2 IC = 2 x ICES VOLTAGE (VOLTS) RBE .0 10 20 30 IB.0 5.0 3.0 5.2 1000 2000 +2.0 3.0 10 20 30 50 100 200 300 500 IC.6 Figure 8.0 -1. COLLECTOR CURRENT (mA) 1000 2000 1.1 A +2. COLLECTOR CURRENT (mA) Figure 10. Collector Saturation Region 106 IC ≈ ICES 105 ICES VALUES OBTAINED FROM FIGURE 12 104 0 30 0. Temperature Coefficients http://onsemi. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N4921 thru 2N4923 VCE = 1.2 0.0 10 20 30 50 150 100 200 300 500 TJ.hFE.4 TEMPERATURE COEFFICIENTS (mV/ °C) IC.0 3.5 -1.5 2.0 5.4 0.2 +0.0 *APPLIES FOR IC/IB ≤ +1. “On” Voltage 104 TJ = 150°C 103 100°C 102 25°C 101 IC = ICES 100 VCE = 30 V 10-1 10-2 -0.3 60 90 120 VCE(sat) @ IC/IB = 10 0 2.5 REVERSE -0.0 +0.0 5.8 108 1.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.2 0 0.5 A Figure 9. COLLECTOR CURRENT (A) µ 0.0V 2 VBE.0 V 300 200 TJ = 150°C 100 70 50 25°C -55°C 30 20 10 2.0 2.3 +0.0 0.5 *θVC FOR VCE(sat) 0 -55°C to +100°C -0. JUNCTION TEMPERATURE (°C) IC.5 IC = 10 x ICES VCE = 30 V TJ = 25°C 107 1.

LLC.5 V (Max) @ IC = 20 Amps CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol Value Unit VCBO 150 Vdc Collector–Emitter Voltage VCEV 150 Vdc Emitter–Base Voltage VEBO 7 Vdc IC ICM 20 30 Adc Base Current – Continuous IB 5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 140 0.ON Semiconductor 2N5038 NPN Silicon Transistors . . Tstg –65 to +200 C Collector–Base Voltage Collector Current – Continuous Peak (1) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. 10 60 Publication Order Number: 2N5038/D . Duty Cycle  50%. (1) Pulse Test: Pulse Width  10 ms.5 µs (Max) • High Current – IC(max) = 30 Amps • Low Saturation – VCE(sat) = 2.8 Watts W/C TJ.5 10 Ω +11 V 0 PW = 20 µs DUTY CYCLE = 1% 1N4933 -9 V -5 V 2N5038 IC = 12 AMPS IB1 = IB2 = 1. VCC +30 V RC 2. 2001 May. 20 AMPERE NPN SILICON POWER TRANSISTOR 90 VOLTS 140 WATTS • High Speed – tf = 0. inverters. . wide–band amplifiers and power oscillators in industrial and commercial applications.25 C/W *Indicates JEDEC Registered Data. Junction to Case Symbol Max Unit RθJC 1.2 AMPS 2N5039 IC = 10 AMPS IB1 = IB2 = 1.0 AMPS Figure 1. fast switching speeds and high current capacity ideally suit these parts for use in switching regulators. Switching Time Test Circuit  Semiconductor Components Industries. 2001 – Rev.

IB1 = IB2 = 1. COLLECTOR CURRENT (AMPS) 100 50 20 dc 10 5 2 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C 1 0. VBE(off) = 1.com 61 . IC. Second breakdown pulse limits are valid for duty cycles to 10%.1 1 2 3 5 7 10 20 30 50 VCE. i.2 Adc) *Indicates JEDEC Registered Data. IC = 0) (VEB = 7 Vdc.. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.e.5 0. (2) Pulse Test: Pulse Width  300.2N5038 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 90 – – – 50 10 – – 5 50 20 100 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc. IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 12 Adc. Forward Bias Safe Operating Area http://onsemi.5 µs DYNAMIC CHARACTERISTICS Magnitude of Common–Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio (IC = 2 Adc. TC = 150C) ICEX Emitter Cutoff Current (VEB = 5 Vdc.5 Vdc. Duty Cycle  2%.5 µs ts – 1. thermal limitations may reduce the power that can be handled to values less than the limitations imposed by second breakdown. µs. the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures. VBE(off) = 1.5 V) (VCE = 100 Vdc. IB = 5 Adc) VCE(sat) – 2. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. IB = 5 Adc) VBE(sat) – 3.2 0. f = 5 MHz) SWITCHING CHARACTERISTICS RESISTIVE LOAD Rise Time (VCC = 30 Vdc) Storage Time (IC = 12 Adc.5 Vdc Base–Emitter Saturation Voltage (IC = 20 Adc. IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 140 Vdc. COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. VCE = 10 Vdc.3 Vdc |hfe| 12 – – tr – 0. VCE = 5 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 20 Adc.

1 — 1.ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors .5 Vdc) (VCE = 60 Vdc. VEB(off) = 1. 2001 March. IB = 0) VCEO(sus) 2N5191 2N5192 Collector Cutoff Current (VCE = 60 Vdc.1 0. — excellent safe area limits. LLC. 2001 – Rev.0 — — — — 0.0%.12 C CASE 77–09 TO–225AA TYPE *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1. IC = 0) IEBO mAdc mAdc (1) Pulse Test: Pulse Width  300 µs.0 Adc Base Current IB 1. Complement to PNP 2N5194. Tstg –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance.1 Adc.1 0. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN 60–80 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5191 2N5192 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5. for use in power amplifier and switching circuits. .0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 320 Watts mW/C TJ. IE = 0) 2N5191 2N5192 Vdc ICEO mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.5 Vdc. Junction to Case Symbol Max Unit θJC 3.0 Vdc. TC = 125C) (VCE = 80 Vdc.  Semiconductor Components Industries.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0. TC = 125C) 2N5191 2N5192 2N5191 2N5192 Collector Cutoff Current (VCB = 60 Vdc. IB = 0) (VCE = 80 Vdc. VEB(off) = 1.5 Vdc. Duty Cycle  2. VEB(off) = 1.5 Vdc) (VCE = 80 Vdc.0 2.0 Vdc Collector Current IC 4. .1 2.0 — — 0. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 1. IB = 0) 2N5191 2N5192 Collector Cutoff Current (VCE = 60 Vdc. *Indicates JEDEC Registered Data. 2N5195. IE = 0) (VCB = 80 Vdc. VEB(off) = 1. 9 62 Publication Order Number: 2N5191/D .

0 A 3.8 0.0 VCE . f = 1.15 Adc) (IC = 4.2 0.5 Adc.0 IB.0 1.0 Vdc) hFE — 2N5191 2N5192 2N5191 2N5192 (IC = 4. BASE CURRENT (mA) 20 Figure 2.0 Adc.0 Adc) VCE(sat) Vdc Base–Emitter On Voltage (2) (IC = 1. DC Current Gain 2.0 5. VCE = 2.0 2.03 0.1 0.com 63 30 50 70 100 200 300 500 .2N5191 2N5192 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS — continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 25 20 10 7. VCE = 2.0 Vdc) Collector–Emitter Saturation Voltage (2) (IC = 1. DC CURRENT GAIN (NORMALIZED) (2) Pulse Test: Pulse Width  300 µs.0 Adc.4 0 0.0 MHz) hFE .0 5.0 3.3 IC. Collector Saturation Region http://onsemi.0 10 3.0 TJ = 150°C VCE = 2.0 Adc.07 0.2 0.004 0.02 0. IB = 0.0 100 80 — — — — 0.05 0.2 IC = 10 mA 100 mA 1.5 1.6 1. COLLECTOR CURRENT (AMP) 0.2 Vdc fT 2. VCE = 2.7 1.5 Adc.05 0.0 2.0 TJ = 25°C 1.3 0.4 Unit ON CHARACTERISTICS DC Current Gain (2) (IC = 1.0 — MHz DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 2.5 -55°C 25°C 0.0 V VCE = 10 V 3. VCE = 10 Vdc.0%.1 0.0 0.1 0.7 0.007 0. 10 7.3 0.0 7. Duty Cycle  2.0 4.0 A 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1.5 Adc. IB = 1.01 0.5 0.6 1.2 0.0 Vdc) VBE(on) — 1. *Indicates JEDEC Registered Data.

005 0.01 0.3 0.1 0.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.5 1.0 Figure 4. TEMPERATURE COEFFICIENTS (mV/°C) 2.02 0.0 2.3 +1.0 V t3 t1 ≤ 7.5 0.0 TJ = 25°C 1.05 0.0% APPROX -9.0V 2 TJ = -65°C to +150°C +2.0 5.5 1. Temperature Coefficients TJ = 150°C 100 +1. “On” Voltages VCE = 30 V 101 *APPLIES FOR IC/IB ≤ IC.2 +0.0 3.0 V 0.03 0.3 0. BASE-EMITTER VOLTAGE (VOLTS) TJ.01 0.0 -1.0 VR.3 0.0 2.2 0.5 Cjd<<Ceb t1 APPROX +11 V -4.8 +2.0 +0. Effects of Base–Emitter Resistance 300 VCC TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) +0.com 64 10 20 30 40 .0 ns 100 < t2 < 500 µs t3 < 15 ns Vin t2 TURN-OFF PULSE RB and RC varied to obtain desired current levels 100 Ceb 70 50 30 DUTY CYCLE ≈ 2.6 1.03 0.0 3.5 Figure 3.6 107 VCE = 30 V IC = 10 x ICES 106 IC ≈ ICES 105 IC = 2 x ICES 104 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 102 20 40 60 80 100 120 140 160 VBE.2 0.0 3.0 V Ccb 0.0 -2.4 -0.5 θV for VBE -2. COLLECTOR CURRENT (AMP) 103 102 hFE@VCE  2. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 100°C 10-3 -0.0 10-1 REVERSE 10-2 25°C FORWARD ICES -0.5 1. Capacitance http://onsemi.1 0.0 4.3 RBE .005 0.4 +0.0 4. Switching Time Equivalent Test Circuit Figure 8.0 IC.05 0.2N5191 2N5192 θV.2 0. REVERSE VOLTAGE (VOLTS) Figure 7.02 0. JUNCTION TEMPERATURE (°C) Figure 5.2 -0. COLLECTOR CURRENT (AMP) TJ = +25°C RC Vin RB 200 SCOPE CAPACITANCE (pF) 0.5 -1.1 0.5 +0.4 VCE(sat) @ IC/IB = 10 0 0.1 +0.0 2. Collector Cut–Off Region Figure 6.1 0 +0.5 *θV for VCE(sat) 0 -0.

3 0.05 0. At high case temperatures.2 0. COLLECTOR CURRENT (AMP) 2.07 0. Turn–On Time IC.0 3.0 3.2 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11.2N5191 2N5192 2.1 1.0 10 t.02 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t). The data of Figure 11 is based on T J(pk) = 150C.0 2.0 0.01 0.05 0.2 tr @ VCC = 10 V 0.1 0.03 0. Thermal Response http://onsemi.0 dc 1.0 0.3 IC.3 IC.5 0.0 IC/IB = 10 TJ = 25°C 1.5 0.07 0.07 0.7 1.05 td @ VEB(off) = 2.05 0.0 2.2 0.0 0.08°C/W MJE5190-92 0.12°C/W 2N5190-92 θJC(max) = 2.0 5.05 θJC(max) = 3.0 ts′ 1. Turn–Off Time 10 5.0 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT AT TC = 25°C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5191 0.5 D = 0.5 0.0 IB1 = IB2 IC/IB = 10 ts′ = ts .0 10 20 50 VCE.0 5.0 4.5 1.01 0.0 tf @ VCC = 10 V 2N5192 2. 100µs 1.03 0.07 0.7 0.0ms 0. the transistor must not be subjected to greater dissipation than the curves indicate. Rating and Thermal Data Active–Region Safe Operating Area 1.0 2.01 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.3 0.7 0.1/8 tf TJ = 25°C 0.05 0.03 SINGLE PULSE 0.0 There are two limitations on the power handling ability of a transistor.5 t.0 V 0. COLLECTOR CURRENT (AMP) TJ = 150°C 2. COLLECTOR CURRENT (AMP) Figure 10. TIME OR PULSE WIDTH (ms) Figure 12.1 0.1 0.1 3..2 Figure 9. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.2 0.5 0.0 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. TIME (s) µ tr @ VCC = 30 V 0.e. i.2 0.3 0.5 0.com 65 20 50 100 200 500 1000 .0 tf @ VCC = 30 V 0.2 0.7 1.02 0.02 0.02 0.1 0.05 0.1 0.03 0.3 0.02 0.1 0.07 0.7 0. TC is variable depending on conditions.0ms 5.0 4. average junction temperature and second breakdown.

1 ms and D = 0.2).com 66 .2N5191 2N5192 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure A.2C http://onsemi. at a pulse width of 0. (D = 0. The peak rise in function temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE. the reading of r(t1.2.12 = 42.5 ms.27 x 50 x 3. multiply the value obtained from Figure 12 by the steady state value θJC.27. Using the model and the device thermal response. D = t1 f - Figure A ∆T = r(t) x PP x θJC = 0. D) is 0. To find θJC(t).1 ms. Using Figure 12. the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. tp = 0. Example: The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.

0 — — 0. 9 67 Publication Order Number: 2N5194/D . 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP 60–80 VOLTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5194 2N5195 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5. TC = 125C) (VCE = 80 Vdc.1 Adc. . Duty Cycle  2.1 — 1.0 Vdc Collector Current IC 4.5 Vdc) (VCE = 80 Vdc.5 Vdc) (VCE = 60 Vdc. . LLC. — excellent safe area limits. VBE(off) = 1.5 Vdc. VBE(off) = 1. IE = 0) 2N5194 2N5195 Vdc ICEO mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Adc Base Current IB 1. Tstg –65 to +150 C/W Symbol Max Unit θJC 3.5 Vdc. Junction to Case CASE 77–09 TO–225AA TYPE *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1. IE = 0) (VCB = 80 Vdc. 2001 – Rev.0%.0 1. IC = 0) IEBO mAdc mAdc *Indicates JEDEC Registered Data.1 0. IB = 0) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.12 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. for use in power amplifier and switching circuits. VBE(off) = 1.0 — — — — 0.ON Semiconductor 2N5194 2N5195 * Silicon PNP Power Transistors . 2001 March.0 Vdc.1 0. IB = 0) (VCE = 80 Vdc. IB = 0) VCEO(sus) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc.1 2.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.  Semiconductor Components Industries.0 2. Complement to NPN 2N5191.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 320 Watts mW/C TJ. (1) Pulse Test: Pulse Width  300 µs. VBE(off) = 1. TC = 125C) 2N5194 2N5195 2N5194 2N5195 Collector Cutoff Current (VCB = 60 Vdc.

3 0. hFE .15 Adc) (IC = 4.5 Adc.0%.com 68 30 50 70 100 200 300 500 .0 Figure 1. COLLECTOR CURRENT (AMP) 0.0 0.0 Adc.0 Adc.03 0.2 Vdc fT 2.007 0.1 0. VCE = 10 Vdc. BASE CURRENT (mA) 20 Figure 2.0 Adc) VCE(sat) Vdc Base–Emitter On Voltage (2) (IC = 1.7 0. Duty Cycle  2.2N5194 2N5195 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS — continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 25 20 10 7.0 V VCE = 10 V 3.5 1.3 IC.5 Adc.8 TJ = 25°C 0. Collector Saturation Region http://onsemi.5 25°C -55°C 0. f = 1. DC CURRENT GAIN (NORMALIZED) 10 7.0 4.5 Adc.5 0. IB = 0.0 3.07 0.0 Vdc) VBE(on) — 1.0 1.0 TJ = 150°C VCE = 2. IB = 1.0 A 3.0 10 3.6 1. DC Current Gain VCE . VCE = 2.0 A 0.0 Vdc) hFE — 2N5194 2N5195 2N5194 2N5195 (IC = 4.0 Vdc) Collector–Emitter Saturation Voltage (2) (IC = 1.0 5.0 5.05 0. VCE = 2.0 2. VCE = 2.7 1.02 0.2 0.1 0.1 0.0 100 80 — — — — 0.0 IB.004 0.0 — MHz DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.2 0.0 7.0 MHz) *Indicates JEDEC Registered Data.05 0.4 Unit ON CHARACTERISTICS DC Current Gain (2) (IC = 1.01 0.0 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2. (2) Pulse Test: Pulse Width  300 µs.3 0.4 0 0.2 0.0 Adc.0 2.6 1.2 IC = 10 mA 100 mA 1.0 2.

5 1.01 0.3 +0.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2. Collector Cut–Off Region VBE(off) Vin 0 0.3 0.6 θV.5 -2. Switching Time Equivalent Test Circuit Figure 8.0 2.0 θVB for VBE -1.5 IC.0 3. “On” Voltage VCE = 30 Vdc 101 +2. Temperature Coefficients TJ = 150°C 10-1 +1.5 0.4 +0.3 0.5 -1.1 ICES 0 -0.05 10-3 +0.2 0.1 0. BASE-EMITTER VOLTAGE (VOLTS) TURN-ON PULSE VCC Vin t1 t2 Vin APPROX -11 V 1.2. COLLECTOR CURRENT (AMP) RBE . EXTERNAL BASE-EMITTER RESISTANCE (OHMS) VOLTAGE (VOLTS) 1.01 0.4 VCE(sat) @ IC/IB = 10 0 0.3 -0. COLLECTOR CURRENT (AMP) 102 100 *APPLIES FOR IC/IB ≤ hFE @ VCE TJ = -65°C to +150°C +2.4 -0.5 *θVC for VCE(sat) 0 -0.1 Figure 4.03 0.1 -0.0 +0.02 0.com 69 10 20 30 40 .2 0.0 V 40 Figure 6. Effects of Base–Emitter Resistance RC RB IC ≈ ICES TJ.0 TJ = 25°C 1.0 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES 104 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 103 102 20 t3 TURN-OFF PULSE 60 80 100 120 140 160 500 TJ = 25°C SCOPE 300 Cjd<<Ceb APPROX +9.0% 50 0.0 4. COLLECTOR CURRENT (A) µ 100°C REVERSE FORWARD 25°C 10-2 +1. JUNCTION TEMPERATURE (°C) CAPACITANCE (pF) APPROX -11 V 0. TEMPERATURE COEFFICIENTS (mV/°C) 2N5194 2N5195 +4.5 107 Figure 5.3 0.0 IC.5 IC.005 0.0 2.2 0. REVERSE VOLTAGE (VOLTS) Figure 7.1 0.0 Figure 3. Capacitance http://onsemi.0 2.0 -2.0 5.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 200 Ceb 100 Ccb 70 t1 ≤ 7.5 -0.0 4.03 0.0 ns 100 < t2 < 500 µs t3 < 15 ns DUTY CYCLE ≈ 2.6 VBE.0 V 0.05 103 0.0 3.0 3.2 +0.020.005 0.5 1.0 VR.2 -0.

0 V 0.05 0. i.05 0. COLLECTOR CURRENT (AMP) 2. TC is variable depending on conditions.03 0.0 0.0 1. Thermal Response http://onsemi. TIME OR PULSE WIDTH (ms) Figure 12.3 IC. The data of Figure 11 is based on TJ(pk) = 150C.0 2.03 0.1 0.2 0.0 Figure 9.5 0.07 0.0 ms IC.0 10 t.05 2.05 td @ VBE(off) = 2. COLLECTOR CURRENT (AMP) 5. TIME (s) µ t.5 D = 0.0 2.0 5.0 IC/IB = 10 TJ = 25°C 1.7 1.0 tf @ VCC = 10 V 0.0 5.3 0.0 Figure 10. Turn–Off Time Note 1: There are two limitations on the power handling ability of a transistor.1 0.5 tr @ VCC = 30 V t.2 0.2 tr @ VCC = 10 V 0.5 0. the transistor must not be subjected to greater dissipation than the curves indicate. Rating and Thermal Data Active–Region Safe Operating Area 1.3 0.2 0.2 2N5194 0.7 0. average junction temperature and second breakdown.7 1.0 ms 5.3 0.com 70 20 30 50 100 200 300 500 1000 .0 4. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11.2N5194 2N5195 2.0 0.0 0.02 0.2 0.1/8 tf TJ = 25°C ts′ 1. At high–case temperatures.5 0.5 1.5 0.0 4.05 0.0 3.07 0.3 0. COLLECTOR CURRENT (AMP) IB1 = IB2 IC/IB = 10 ts′ = ts . COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t).1 0.2 0.01 0.1 0.02 0.0 3. TIME (s) µ 0.e.07 0.0 10 20 50 VCE.12°C/W 0.07 0.3 0.0 tf @ VCC = 30 V 0.1 IC.7 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C. Turn–On Time 0.0 dc SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 0.02 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.05 0.01 0.05 0.0 0.0 2N5195 2.07 0.7 0.03 0. 10 1.5 0.02 SINGLE PULSE 0.1 1. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 0..03 0.0 100 µs TJ = 150°C 2.02 0.1 3.01 θJC(max) = 3.2 0.

the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0. (D = 0.27 x 50 x 3.2).2. To find θJC(t). the reading of r(t1. Using the model and the device thermal response. The peak rise in junction temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE. ∆T = r(t) x PP x θJC = 0.27. D) is 0. Using Figure 12. multiply the value obtained from Figure 12 by the steady state value θJC.1 ms and D = 0.com 71 . at a pulse width of 0.5 ms.12 = 42. D = t1 f = Figure 13.2N5194 2N5195 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure 13.2C http://onsemi. tp = 0.1 ms.

75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Symbol 2N5302 Unit VCEO 60 Vdc VCB 60 Vdc Collector Current – Continuous IC 30 Adc Base Current IB 7. for use in power amplifier and switching circuits applications. LLC.ON Semiconductor High-Power NPN Silicon Transistor 2N5302 . Case to Ambient θCA 34 C/W *Indicates JEDEC Registered Data. 2001 May. Power Temperature Derating Curve  Semiconductor Components Industries. PD.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 Figure 1.0 100 TA 2.0 200 6. 0 72 Publication Order Number: 2N5302/D . POWER DISSIPATION (WATTS) TA TC 8.875 C/W Thermal Resistance. .0 150 TC 4. .14 Watts W/C TJ. Junction to Case θJC 0. 2001 – Rev. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE(sat) = 0. Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance.

0 Vdc) *(IC = 15 Adc.7 1.0 kHz) hfe 40 – – *SWITCHING CHARACTERISTICS Rise Time Storage Time ((VCC = 30 Vdc. VEB(off) = 1.0 Adc) (IC = 15 Adc. f = 1.0 – 10 – 1.0 – 1. IB = 2.5 Adc) (IC = 20 Adc.0 µs ts – 2. VEB(off) = 1.0 Vdc) (IC = 30 Adc.5 Vdc.0 Adc)2 (IC = 30 Adc.0 3.0 +11 V 10 -2. IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 60 Vdc.0%.2N5302 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 – – 5. dc.0 – 5.0 Adc) VBE(sat) *Base–Emitter On Voltage (Note 1) (IC = 15 Adc.0 MHz) fT 2. IB = 1.0 Vdc) VBE(on) – Vdc Vdc Vdc *DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 1. TC = 150C) ICEX Collector Cutoff Current (VCB = 80 Vdc. VCE = 2.0% VCC INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2. IB = 1. IE = 0) ICBO Emitter Cutoff Current (VBE = 5. IB = 2. Turn–Off time http://onsemi. VCE = 4. VCE = 4. Turn–On time Figure 3. IB1 = IB2 = 1. dc.0 Adc.5 Vdc) ICEX Collector Cutoff Current (VCE = 60 Vdc. IC = 10 0 Adc.0 Adc) (IC = 20 Adc.0 Vdc) *(IC = 30 Adc.0 µs *Indicates JEDEC Registered Data.0 Adc.0 Adc. Duty Cycle  2.5 – – 1. VCE = 2. f = 1.0 Unit *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc.0% +30 V 3.com 73 +30 V TO SCOPE tr ≤ 20 ns .0 – 60 – – – – 0.0 0 Adc) dc) Fall Time tr – 1.0 – – – 1. Note 1: Pulse Width  300 µs.0 Adc) VCE(sat) *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc. IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) *(IC = 1. VCE = 10 Vdc.0 V Figure 2.0 +11 V TO SCOPE tr ≤ 20 ns 0 -9.0 40 15 5.7 3.8 2. IB = 6.0 µs tf – 1.0 Vdc) hFE *Collector–Emitter Saturation Voltage (Note 1) (IC = 10 Adc. IB = 0) ICEO Collector Cutoff Current (VCE = 60 Vdc.0 – MHz Small–Signal Current Gain (IC = 1. VCE = 10 Vdc. VCE = 2.0 V VCC 3. SWITCHING TIME EQUIVALENT TEST CIRCUITS INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2. IB = 1.75 2.0 Vdc.0 V 10 D VBB = 7.

Active–Region Safe Operating Area TJ = 25°C IC/IB = 10 ts′ 1.02 0.05 20 30 Figure 7.com 74 10 30 . COLLECTOR CURRENT (AMP) Figure 8.1 0.5 C.0 IC.2 0. COLLECTOR CURRENT (AMP) 50 100 µs 2000 10 5.01 0.1 0. Thermal Response 100 3000 IC.0 3.0 10 20 VR. Turn–On Time 0.TC = P(pk) θJC(t) DUTY CYCLE. CAPACITANCE (pF) 20 dc TJ = 25°C 1000 Cib 500 200 2N5302 0.5 100 Figure 5.2 0.03 0.2 0.1 1.1 1.03 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.0 ms 5302 1.0 V 0. TIME (ms) 20 30 50 100 200 300 1000 2000 500 Figure 4.5 1. D = t1/t2 0.0 7.02 0.07 0.0 t.5 1.5 tr @ VCC = 30 V 0. Capacitance versus Voltage 5.5 0.0 2.0 3.0 5.0 1.2 0.1 0.0 0.0 3.05 0.0 0.05 2.0 Figure 6.05 P(pk) θJC(t) = r(t) θJC θJC = 0.05 0.7 0.0 5.1 0. TIME (s) µ Cob 300 tf @ VCC = 10 V tr @ VCC = 10 V td @ VOB = 2.3 0.2 0.5 1.3 0.0 ms TJ = 200°C Secondary Breakdown Limited Bonding Wire Limited TC = 25°C Thermal Limitations Pulse Duty Cycle ≤ 10% 2.r(t).01 0.5 D = 0.0 t. COLLECTOR CURRENT (AMP) 10 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5302 1.0 0.0 10 20 30 VCE.1/8 tf 0.0 3.3 0.0 5.1 0.0 5.3 0.0 10 t.0 5.02 SINGLE PULSE 0. REVERSE VOLTAGE (VOLTS) 3.7 0. Turn–Off Time http://onsemi.3 30 50 TJ = 25°C IB1 = IB2 IC/IB = 10 ts′ ≈ ts .875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .0 5.1 0. TIME (s) µ 1.2 0.7 0.3 0.0 3.0 2.05 0.0 IC.07 0.03 0.03 0.0 0.5 tf @ VCC = 30 V 0.0 50 2.0 3.0 2.

5 TJ = -55°C to +175°C +2.3 REVERSE -0. VOLTAGE (VOLTS) RBE .0 0 0. TEMPERATURE COEFFICIENTS (mV/°C) IC.1 FORWARD 0 0.4 -0.3 0.1 0.3 0.0 TJ = 25°C 0.8 0.0 V VCE(sat) @ IC/IB = 10 0.0 3.0 A 0. Effects of Base–Emitter Resistance Figure 12.1 0.05 200 103 102 TJ = 175°C 100°C 101 25°C 100 IC = ICES 10-1 10-2 10-3 -0.0 5.4 0 0. COLLECTOR CURRENT (AMP) Figure 13.0 5.1 0.03 0.0 A 1.5 0.0 TJ = 25°C 1.5 hFE@VCE  2. BASE-EMITTER VOLTAGE (VOLTS) IC.5 1.5 1.5 1.0 IB.5 1.1 0.6 0. COLLECTOR CURRENT (A) µ 1.01 0.0 5.6 IC = 10 x ICES 0 0.5 -2.5 +1.2 TJ.0 VCE = 30 V 103 10 A Figure 10.2 10 1.0 θVB for VBE(sat) -1.03 0.2 -0. DC Current Gain 106 IC = 2.03 0.02 IC = 2 x ICES 105 IC ≈ ICES 40 60 80 100 140 180 160 0.6 VBE(on) @ VCE = 2.6 10 +2.0 3.05 0.0 10 VBE.0 V TJ = 175°C 200 VCE .1 0.0 -2.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 20 0.8 VBE(sat) @ IC/IB = 10 0.2 Figure 9.3 0.com 75 30 30 .3 0.300 hFE. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5302 25°C 100 70 50 -55°C 30 20 10 0. COLLECTOR CURRENT (AMP) Figure 11.4 0.0 IC.2 120 2.5 0.2 0.05 0.0 +1.0 *APPLIES FOR IC/IB < +0.05 1. JUNCTION TEMPERATURE (°C) VCE = 30 V 5. BASE CURRENT (AMP) 1.0 IC. DC CURRENT GAIN VCE = 10 V VCE = 2.0V 2 *θVC for VCE(sat) 0 -0. Collector Saturation Region 108 104 5. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 102 20 A 2.0 3. COLLECTOR CURRENT (AMP) 10 30 2.0 1.4 0.8 V. Temperature Coefficients http://onsemi. Collector Cut–Off Region Figure 14. “On” Voltages θV.5 -1.

2001 – Rev. Power Derating Safe Area Curves are indicated by Figure 5.ON Semiconductor NPN High-Voltage .0 Vdc Collector Current – Continuous Peak IC 16 20 Adc Base Current – Continuous IB 5.14 Watts W/C TJ.875 C/W (1) Indicates JEDEC Registered Data. designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance.High Power Transistors 2N5631 PNP 2N6031 .0 Adc hFE = 15 (Min) Low Collector–Emitter Saturation Voltage – VCE(sat) = 1. PD. 0 76 Publication Order Number: 2N5631/D . .0 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol Value Unit VCEO 140 Vdc Collector–Base Voltage VCB 140 Vdc Emitter–Base Voltage VEB 7. Junction to Case Symbol Max Unit θJC 0. 2001 May. LLC.  Semiconductor Components Industries. POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC. • High Collector Emitter Sustaining Voltage – • • 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS VCEO(sus) = 140 Vdc High DC Current Gain – @ IC = 8.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1. TEMPERATURE (°C) 160 180 200 Figure 1. All Limits are applicable and must be observed. .

TIME (s) µ SCOPE RB 0 -9.0 Vdc. IB = 0) VCEO(sus) Collector–Emitter Cutoff Current (VCE = 70 Vdc.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA TJ = 25°C IC/IB = 10 VCE = 30 V 1.0 Adc. f = 0.2 0.0 2.0 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 10 Adc.0 D1 tr. COLLECTOR CURRENT (AMP) Figure 3. VCE = 2.5 Vdc) (VCE = Rated VCB.2 td @ VBE(off) = 5.7 0.1 MHz) 2N5631 2N6031 Small–Signal Current Gain (IC = 4. IB = 1.5 tr 0.0 IC.0 5.8 Vdc Base–Emitter On Voltage (IC = 8.0 2.7 1.0 kHz) *Indicates JEDEC Registered Data.0 2. VCE = 2.0 0. TC = 150C) ICEX mAdc Collector–Base Cutoff Current (VCB = Rated VCB.0 Vdc) (IC = 16 Adc.0% -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.05 0. VCE = 10 Vdc.1 0.5 0. Duty Cycle  2.5 MHz) Output Capacitance (VCB = 10 Vdc. e. (1) Pulse Test: Pulse Width 300 µs.0 – – 2.0 Adc.0 – MHz Cob – – 500 1000 pF hfe 15 – – DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (3) (IC = 1. IE = 0. (2) fT = |hfe| • ftest VCC +30 V 25 µs RC +11 V 51 t. Figure 2. IC = 0) IEBO – 5. VEB(off) = 1.0 Adc) (IC = 16 Adc.0 mAdc Emitter–Base Cutoff Current (VBE = 7.g.03 0. tf ≤ 10 ns DUTY CYCLE = 1. reverse all polarities and D1.0%. ftest = 0.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 10 Adc.5 Vdc fT 1.0 3.0 7.0 V 0.5 Vdc. Switching Times Test Circuit 2N5631 2N6031 0.0 Collector–Emitter Cutoff Current (VCE = Rated VCB.0 V 3.0 60 – – – 1. Turn–On Time http://onsemi. f = 1.0 ON CHARACTERISTICS (2) DC Current Gain (IC = 8 Adc.07 0.0 Adc) VBE(sat) – 1.0 Adc. IE = 0) ICBO – 2. VCE = 20 Vdc.0 7.com 77 10 20 . IB = 0) Vdc ICEO mAdc – 2.2N5631 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 140 – Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc.3 For PNP test circuit. VEB(off) = 1. IB = 4. VCE = 2. IB = 1.3 0.0 Vdc) VBE(on) – 1.0 mAdc 15 4.

COLLECTOR CURRENT (AMP) 10 20 .com 78 0.0 20 50 100 200 500 1000 2000 Figure 4.7 1.3 Figure 6.0 3. 1.0 2.0 3. Turn–Off Time http://onsemi.05 0.6 0.3 0.2N5631 2N6031 r(t).2 2.0ms 0.7 1.0 IC.5 0. Active–Region Safe Operating Area NPN 2N5631 PNP 2N6031 5.0 t.2 0.1 0.7 TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V ts tf 0.2 0.05 0. TJ(pk) may be calculated from the data in Figure 4. i.5 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.0 1.0 0.02 0.. Thermal Response IC.0 10 20 30 50 70 100 VCE.0 10 t.0 4. D = t1/t2 0.7 0. TIME (s) µ 2. The data of Figure 5 is based on TJ(pk) = 200C. the transistor must not be subjected to greater dissipation than the curves indicate.4 tf 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 5.1 P(pk) θJC(t) = r(t) θJC θJC = 0.0 5.0 2.2 20 0.05 0.5 0.1 0.0 2N5631.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .0 50ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 2.0 0.0 7.02 0.0ms 10 7.0 dc 3.0 5.0 3.TC = P(pk) θJC(t) DUTY CYCLE.0 7.0 D = 0.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 5.01 SINGLE PULSE 0.02 0. At high case temperatures.0 IC.3 2.0 ts TJ = 25°C IC/IB = 10 IB1 = IB2 VCE = 30 V 3.5ms CURVES APPLY BELOW RATED VCEO 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.5 0.3 10 0.0 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C.0 7.0 5. TC is variable depending on conditions.0 1. 2N6031 5. COLLECTOR CURRENT (AMP) 20 5.0 3.5 1.5 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.e.2 0.5 0.2 0.01 0. COLLECTOR CURRENT (AMP) 1. TIME (ms) 2.

1 0.5 0.3 20 10 TJ = +150°C 0.0 IC.2 IC = 4.0 5.0 5. CAPACITANCE (pF) C. BASE CURRENT (AMP) 2. CAPACITANCE (pF) 700 500 Cib 300 200 0.2 TJ = 25°C 1000 200 200 Cob 0.07 0.0 A 16 A 0.0 A 8.4 0 0. DC Current Gain TJ = 25°C 1.com 79 8.2 0.3 0.07 0.0 10 20 50 VR. DC CURRENT GAIN 300 200 -55°C 30 20 10 7.0 2.2 IC = 4.0 5.1 Figure 9.2 0.0 5.3 0.0 2.0 0.6 1.0 3.0 IB. COLLECTOR CURRENT (AMP) VCE = 2.0 3. REVERSE VOLTAGE (VOLTS) 100 200 Figure 7. REVERSE VOLTAGE (VOLTS) 100 700 500 Cib 300 Cob 100 0. BASE CURRENT (AMP) 2.0 5.05 0.6 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 V VCE = 10 V hFE.5 0.0 .0 V VCE = 10 V +25°C 100 70 50 -55°C 30 20 10 7.0 IC.0 3.2N5631 2N6031 NPN 2N5631 PNP 2N6031 1000 2000 TJ = 25°C C.0 5.0 10 20 50 VR.5 0.0 0.05 0.0 2.5 1.7 1.4 0 0.7 1.0 5.0 TJ = 25°C 1.7 1.0 VCE .3 0.0 5.0 IB.8 0.0 A 0.0 A 16 A 0.2 0.0 3.2 0.0 2.2 0. DC CURRENT GAIN hFE.0 2.7 1.5 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.8 0. COLLECTOR CURRENT (AMP) 10 20 2. Capacitance 500 500 TJ = 150°C 25°C 100 70 50 300 200 VCE = 2. Collector Saturation Region http://onsemi.5 1.

5 1. low–current. 2001 May. . Sustaining Voltage Test Circuit Figure 1.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS • Excellent DC Current Gain – • hFE = 30–250 @ IC = 100 mAdc Current–Gain – Bandwidth Product – fT = 10 MHz (Min) @ IC = 50 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc Collector–Base Voltage VCB 275 375 Vdc Emitter–Base Voltage Collector–Emitter Voltage VEB 6.25 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.0 Vdc Collector Current – Continuous Peak IC 0. Junction to Case (1) Indicates JEDEC Registered Data.0 150 Figure 2.16 Watts W/C TJ. Both limits are applicable and must be observed.0 V Y 300 25 50 V 50 75 100 TC.0 Adc Base Current IB 0.ON Semiconductor 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor .  Semiconductor Components Industries. designed for use in line–operated equipment such as audio output amplifiers. LLC. high–voltage converters.25 C/W Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance. PD. POWER DISSIPATION (WATTS) 40 30 50 mH X 20 200 Hg RELAY 10 0 + TO SCOPE 6. 2001 – Rev. 6 80 Publication Order Number: 2N5655/D . and AC line relays. 0. Tstg –65 to +150 C Symbol Max Unit θJC 6. . Power Derating Safe Area Limits are indicated by Figures 3 and 4. CASE TEMPERATURE (°C) 125 + - 1.

com 81 . VCE = 10 Vdc) (IC = 500 mAdc. i. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 – 250 – – – – – 1.e.02 0.2N5655 2N5657 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc (inductive).0 kHz) hfe 20 – – *Indicates JEDEC Registered Data for 2N5655 Series. IB = 25 mAdc) (IC = 500 mAdc. Duty Cycle  2.1 Collector Cutoff Current (VCE = 250 Vdc. VCE = 10 Vdc. (1) Pulse Test: Pulse Width  300 µs. 10 µs 2N5657 20 30 40 60 100 200 300 400 VCE.0%.1 0. the transistor must not be subjected to greater dissipation than the curves indicate. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. VCE = 10 Vdc) (IC = 250 mAdc.0 0. IB = 0) (VCE = 250 Vdc. TC is variable depending on conditions. VEB(off) = 1.0 Vdc.0 mAdc.0 Collector Cutoff Current (VCB = 275 Vdc. VCE = 10 Vdc) (IC = 100 mAdc.5 Vdc. VCE = 10 Vdc) Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (2) (IC = 50 mAdc. f = 1. IE = 0) 2N5655 2N5657 – – 10 10 – 10 25 30 15 5. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. TC = 100C) (VCE = 250 Vdc. IE = 0. IB = 100 mAdc) – VCE(sat) Base–Emitter Voltage (1) (IC = 100 mAdc..05 0.5 Vdc) (VCE = 150 Vdc.0 Vdc ICEO mAdc ICEX mAdc µAdc ICBO Emitter Cutoff Current (VEB = 6. (2) fT is defined as the frequency at which |hfe| extrapolates to unity.5 10 VBE – 1. VEB(off) = 1.5 Vdc. VCE = 10 Vdc) hFE Collector–Emitter Saturation Voltage (1) (IC = 100 mAdc. IE = 0) (VCB = 375 Vdc. IC = 0) IEBO µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc. TC = 100C) 2N5655 2N5657 2N5655 2N5657 – – – – 0. IC. Active–Region Safe Operating Area http://onsemi. VEB(off) = 1.0 2.1 0.5 500 µs TJ = 150°C 0.2 1. COLLECTOR CURRENT (AMP) 1. IB = 10 mAdc) (IC = 250 mAdc. f = 100 kHz) fT 10 – MHz Cob – 25 pF Small–Signal Current Gain (IC = 100 mAdc.1 0. IB = 0) 2N5655 2N5657 V(BR)CEO 250 350 – – Vdc Collector Cutoff Current (VCE = 150 Vdc.1 1. IB = 0) 2N5655 2N5657 – – 0.0 1.0 ms d c Second Breakdown Limit Thermal Limit @ TC = 25°C Bonding Wire Limit Curves apply below rated VCEO 2N5655 0. VCE = 10 Vdc. COLLECTOR-EMITTER VOLTAGE (VOLTS) 600 Figure 3. L = 50 mH) 2N5655 2N5657 VCEO(sus) 250 350 – – Vdc Collector–Emitter Breakdown Voltage (IC = 1.5 Vdc) (VCE = 350 Vdc. At high case temperatures. The data of Figure 3 is based on TJ(pk) = 150C. VEB(off) = 1. f = 10 MHz) Output Capacitance (VCB = 10 Vdc.

2N5655 2N5657 300 hFE .1 ts 2.0 10 20 50 100 IC.2 0.0 10 20 50 100 IC.0 TJ = +25°C Cib VBE(sat) @ IC/IB = 10 C. DC CURRENT GAIN 200 VCE = 10 V VCE = 2.0 3.5 0.1 1. COLLECTOR CURRENT (mA) 200 0. COLLECTOR CURRENT (mA) 70 100 200 300 500 Figure 4.01 1. Capacitance t. CAPACITANCE (pF) V. VBE(off) = 2.05 0.2 0.4 VCE(sat) @ IC/IB = 10 0.2 Figure 5. only) 0. VOLTAGE (VOLTS) 0.0 5.0 V TJ = +150°C 100 70 +100°C 50 +25°C 30 20 -55°C 10 1. VBE(off) = 0 V IC/IB = 10 5. TIME (s) µ tr 5.0 500 Figure 7. Turn–On Time 2.0 5.8 td 0. COLLECTOR CURRENT (mA) Figure 8.0 2.0 50 100 10 IC/IB = 10 VCC = 300 V.0 0.0 10 20 VR.0 7. TIME (s) µ 1.0 10 20 30 50 IC.0 VCC = 300 V (Type 2N5657.5 1. Turn–Off Time http://onsemi.0 VCC = 100 V 0.0 t.2 0 10 20 30 50 100 200 300 IC.0 V (2N5657.0 5.02 2. COLLECTOR CURRENT (mA) 100 70 50 30 20 TJ = +25°C IC/IB = 5.1 500 Cob 0.com 82 200 500 .0 tf 1.5 0. only) VCC = 100 V.0 5.0 2. Current Gain 1. “On” Voltages 10 2.0 300 200 VBE @ VCE = 10 V 0. REVERSE VOLTAGE (VOLTS) Figure 6.0 10 0.6 0.

Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance.0 Vdc Collector Current – Continuous IC 50 Adc Base Current IB 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1. . 2001 May.715 Watts W/C TJ.  Semiconductor Components Industries. PD. POWER DISSIPATION (WATTS) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 Figure 1. LLC.ON Semiconductor PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. DC Current Gain – hFE = 15–60 @ IC = 25 Adc Low Collector–Emitter Saturation Voltage – VCE(sat) = 1. designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. 2001 – Rev.584 C/W (1) Indicates JEDEC Registered Data. . 10 83 Publication Order Number: 2N5684/D . Junction to Case Symbol Max Unit θJC 0.0 Vdc (Max) @ IC = 25 Adc 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–80 VOLTS 300 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol 2N5684 2N5686 Unit VCEO 80 Vdc Collector–Base Voltage VCB 80 Vdc Emitter–Base Voltage VEB 5.

03 0.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 2) (IC = 0. Turn–On Time Figure 2.0 3.0 Vdc) hFE – Collector–Emitter Saturation Voltage (Note 2) (IC = 25 Adc. IE = 0.0% VCC TO SCOPE tr ≤ 20 ns RB tr ≤ 20ns 10 to 100 µs -30 V RL +10V -12V t.0 V 0 TO SCOPE tr ≤ 20 ns RB 1. VCE = 5. Duty Cycle  2. IE = 0) ICBO Emitter Cutoff Current (VBE = 5. FOR NPN CIRCUITS.0 Vdc. IB = 2.5 Vdc) (VCE = 80 Vdc.2N5684 2N5686 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 – – 1.07 0.0 Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 5.0 7.05 0. TC = 150C) ICEX Collector Cutoff Current (VCB = 80 Vdc.com 84 30 50 .0 15 5.0 – MHz Cob – – 2000 1200 pF hfe 15 – *Indicates JEDEC Registered Data.0 +4.7 1. VEB(off) = 1.0 kHz) fT 2. IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 25 Adc. VCE = 5.5 0.0 V DUTY CYCLE ≈ 2. VEB(off) = 1.5 Adc) VBE(sat) – 2.1 0.0% FOR CURVES OF FIGURES 3 & 6. Note 2: Pulse Test: Pulse Width  300 µs. INPUT LEVELS ARE APPROXIMATELY AS SHOWN.0 MHz) Output Capacitance (VCB = 10 Vdc.0 5. VCC -30 V RL +2.0 – 5.0 Vdc. IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc. COLLECTOR CURRENT (AMP) Figure 3.0 5.0 – – 2. f = 0. IB = 2.0%.0 10 – 2.0 Adc.5 Adc) (IC = 50 Adc.2 Adc.0 10 IC.02 TJ = 25°C IC/IB = 10 VCC = 30 V 0. IB = 0) ICEO Collector Cutoff Current (VCE = 80 Vdc. VCE = 10 Vdc.2 td 0.1 MHz) 2N5684 2N5686 Small–Signal Current Gain (IC = 10 Adc. TIME (s) µ 10 to 100 µs 0 tr VBB 0. VCE = 2.5 Vdc. f = 1. REVERSE ALL POLARITIES. RB & RL ARE VARIED.01 0.0 Vdc Base–Emitter On Voltage (Note 1) (IC = 25 Adc.0 Vdc) VBE(on) – 2.5 -12V tr ≤ 20ns 0. IB = 10 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc. f = 1.7 0.0 0. 2N5684 (PNP) 2N5686 (NPN) 20 2.0 60 – – – 1. VCE = 2. Switching Time Test Circuit http://onsemi.3 DUTY CYCLE ≈ 2.0 Vdc) (IC = 50 Adc.

0 7.5 1. CAPACITANCE (pF) 4.0 10 t.02 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5684 2N5686 1.0 5.7 0.0 10 VCE. 1. Active–Region Safe Operating Area 2N5684 (PNP) 2N5686 (NPN) 3.2 0.0 0.0 10 20 IC.0 2.05 P(pk) θJC(t) = r(t) θJC θJC = 0.6 0.8 0.5 0.1 1. 2N5686 2.1 0.0 2.0 0.2 0.0 7.01 0. Turn–Off Time Cob Cib 1000 0.0 3.e.0 t.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.0 Cib 2N5684 (PNP) 2N5686 (NPN) 0. Thermal Response IC. Capacitance http://onsemi. the transistor must not be subjected to greater dissipation than the curves indicate. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C. TIME (ms) 20 50 100 200 500 1000 2000 Figure 4.0 5. COLLECTOR CURRENT (AMP) 100 20 10 5..0 5.2 Cob 0. TIME (s) µ 2.2 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.2 0. At high case temperatures.07 0.0 ts 5000 TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V TJ = 25°C 3000 C.05 0.01 0.02 SINGLE PULSE 0.3 0. REVERSE VOLTAGE (VOLTS) Figure 7.0 ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.0 3.0 2000 1. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.02 0.4 tf 700 2.5 dc 5.com 85 50 100 .584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .5 D = 0. 2N5684. COLLECTOR CURRENT (AMP) 30 500 0. TC is variable depending on conditions.r(t).5 0.3 0.5 1.7 1.0 10 20 VR. TJ(pk) may be calculated from the data in Figure 4.0 100 µs 500 µs 50 The data of Figure 5 is based on TJ(pk) = 200C.0 0. D = t1/t2 0.TC = P(pk) θJC(t) DUTY CYCLE.05 0.1 0.03 0.0 20 30 50 70 100 5.0 2. i.1 0.0 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.1 50 Figure 6.

COLLECTOR CURRENT (AMP) Figure 10.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 1.7 50 IC. “On” Voltages http://onsemi.2 0.2 0.0 7.0 1.2 5.0 5. COLLECTOR CURRENT (AMP) 30 50 Figure 8.2 1.0 +25°C 100 70 -55°C 50 VCE = 2.2 5.0 50 2. BASE CURRENT (AMP) 0.0 TJ = 25°C TJ = 25°C 1.5 0.8 0.7 1.0 V 0.0 7.5 0.0 5.0 3.6 V.0 5.7 2.5 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE . DC CURRENT GAIN hFE . Collector Saturation Region 2.0 0.0 3.6 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 5.5 0.0 2.8 0. COLLECTOR CURRENT (AMP) 1.0 3.1 0.0 IB.0 V VCE = 10 V hFE .4 0.0 0. DC Current Gain 2.0 0.0 2.0 5.7 1. VOLTAGE (VOLTS) V.0 10 20 30 0 0.5 1.5 2.5 1.0 10 20 IC.5 1.0 V 0.4 0 TJ = 25°C 1.0 7.6 0. COLLECTOR CURRENT (AMP) 30 50 -55°C 30 20 10 7.0 10 IC.0 2.0 IB.0 1.1 0.2N5684 2N5686 PNP 2N5684 500 500 TJ = +150°C 300 200 +25°C 100 70 30 20 10 7.0 3.0 3.3 0.5 0 0.0 10 20 IC.0 3.0 10 20 30 50 Figure 9. BASE CURRENT (AMP) 5.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.com 86 . DC CURRENT GAIN NPN 2N5686 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 V VCE = 10 V TJ = +150°C 300 200 VCE = 2. VOLTAGE (VOLTS) 2.0 10 0 0.0 VCE .0 TJ = 25°C IC = 10 A 40 A 25 A IC = 10 A 25 A 40 A 1.

0 Vdc Collector Current — Continuous Peak IC 25 50 Adc Base Current IB 7. 9 87 Publication Order Number: 2N5883/D .5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1. 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC. (max) at IC = 15 Adc Low Leakage Current ICEX = 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.875 C/W Thermal Resistance. POWER DISSIPATION (WATTS) (1) Indicates JEDEC registered data.0 Vdc. CASE TEMPERATURE (°C) 175 200 Figure 1. 2001 – Rev.  Semiconductor Components Industries. LLC. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — • • • VCE(sat) = 1.0 Adc *ON Semiconductor Preferred Device 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–80 VOLTS 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Symbol 2N5883 2N5885 2N5884 2N5886 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5. 2001 March.0 mAdc (max) at Rated Voltage Excellent DC Current Gain — hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product — fτ = 4. Tstg –65 to +200 C Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 0.0 MHz (min) at IC = 1.15 Watts W/C TJ. All above values most or exceed present JEDEC registered data. designed for general–purpose power amplifier and switching applications. Junction to Case PD. . .ON Semiconductor PNP Complementary Silicon High-Power Transistors 2N5883 2N5884* . Units and conditions differ on some parameters and re–registration reflecting these changes has been requested.

0 mAdc Collector Cutoff Current (VCE = 60 Vdc. http://onsemi.0 µs tf — 0.0 mAdc hFE 35 20 4. VBE(off) = 1. IB = 1. TC = 150C) (VCE = 80 Vdc. VBE(off) = 1.5 Vdc) (VCE = 60 Vdc. 2N5885 2N5884.0 kHz) fT 4. ftest = 1. 2N5886 VCEO(sus) 60 80 — — Vdc Collector Cutoff Current (VCE = 30 Vdc. IE = 0.0 Vdc) DC Current Gain (2) (IC = 25 Adc. VCE = 4.0 Adc. 2N5884 2N5885.0 Vdc. f = 1. TC = 150C) 2N5883. 2N5885 2N5884. Duty Cycle  2.0 1 0 Adc) *Indicates JEDEC Registered Data.0 — 100 — Collector–Emitter Saturation Voltage (2) (IC = 15 Adc.5 Vdc.0 MHz) 2N5883.0 Vdc) DC Current Gain (2) (IC = 10 Adc. VBE(off) = 1. IE = 0) 2N5883.5 Vdc) (VCE = 80 Vdc.25 Adc) VBE(sat) — 2.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (3) (IC = 1. VBE(off) = 1.5 Vdc.com 88 tr — 0. IB = 6.5 Vdc Base–Emitter On Voltage (2) (IC = 10 Adc.5 Vdc ICEX mAdc ICBO Emitter Cutoff Current (VEB = 5. VCE = 10 Vdc.25 Adc) VCE(sat) — — 1. (3) fT = |hfe| • ftest.8 µs . 2N5885 2N5984. Vdc IC = 10 Adc. IB = 0) Characteristic 2N5883.0 1.0 Adc.0 Vdc Base–Emitter Saturation Voltage (2) (IC = 25 Adc. IC = 0) mAdc ON CHARACTERISTICS DC Current Gain (2) (IC = 3. 2N5886 — — — 1. IE = 0) (VCB = 80 Vdc.0%.0 1. 2N5886 ICEO — — 2. 2N5886 2N5883.0 IEBO — 1. (2) Pulse Test: Pulse Width  300 µs. Adc IB1 = IB2 = 1.0 Adc.7 µs ts — 1.0 10 10 Collector Cutoff Current (VCB = 60 Vdc.0 2. ftest = 1. IB = 0) 2N5883. IB = 6. 2N5886 Small–Signal Current Gain (IC = 3. IB = 0) Collector Cutoff Current (VCE = 40 Vdc.0 — MHz Cob — — 1000 500 pF hfe 20 — — SWITCHING CHARACTERISTICS Rise Time Storage Time Fall Time (VCC = 30 Vdc. 2N5885 2N5884.0 MHz) Output Capacitance (VCB = 10 Vdc. 2N5886 — — 1.0 Vdc.2N5883 2N5884 2N5885 2N5886 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Max Unit Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc. VCE = 4.0 Vdc) VBE(on) — 1. 2N5885 2N5884.5 Adc) Collector–Emitter Saturation Voltage (2) (IC = 25 Adc.0 4. VCE = 4. VCE = 4. VCE = 4.

0 3.0 5.0 V DUTY CYCLE ≈ 2.0 TO SCOPE tr ≤ 20 ns RB -11V -30 V t.02 0. REVERSE ALL POLARITIES. Turn–On Time Figure 2.5 10 to 100 µs VCC TURN–OFF TIME RL 0 10 tr ≤ 20ns 10 to 100 µs VBB 3.2 0. COLLECTOR CURRENT (AMPERES) Figure 3.03 0.0 -11V tr ≤ 20ns 0.0 2.3 0.0 10 0 TO SCOPE tr ≤ 20 ns RB 2.05 0.0 0.0% +9. INPUT LEVELS ARE APPROXIMATELY AS SHOWN.0V TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.1 0.7 0.0 7. TIME (s) µ DUTY CYCLE ≈ 2. 2N5884 (PNP) 2N5885.07 0.3 +7.5 0. Switching Time Equivalent Test Circuits http://onsemi. RB & RL ARE VARIED.com 89 20 30 .0 V 3.2N5883 2N5884 2N5885 2N5886 VCC TURN–ON TIME -30 V RL +2.7 1. tr td 2N5883. FOR NPN. 2N5886 (NPN) 0.0 10 IC.0% FOR CURVES OF FIGURES 3 & 6.

0 0. D = t1/t2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active–Region Safe Operating Area 3000 2N5883.2 0.1 30 Cob 1000 500 tf 0.0 2.7 1. TJ(pk) may be calculated from the data in Figure 4. TC is variable depending on conditions. i.7 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C.0 ts 2.2 0.0 2.0 2.0 TJ = 25°C 2000 ts 1.02 0. 2N5884 (PNP) 2N5885.0 5. 2N5884 (PNP) 2N5885. COLLECTOR CURRENT (AMPERES) 100 50 1ms 20 2.3 0.05 0.0 5.0 2.01 SINGLE PULSE 0.5 1.2 0..1 1.0 D = 0.02 0.0 7.0 10 20 VR.05 0. TIME (s) µ 3. CAPACITANCE (pF) 10 7. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.1 0. 2N5886 0.2N5883 2N5884 2N5885 2N5886 r(t). COLLECTOR CURRENT (AMPERES) Cib 20 Cib 700 300 0.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.2 Cob 0.5 5ms dc 10 5.TC = P(pk) θJC(t) DUTY CYCLE. At high case temperatures.1 0.0 1.02 P(pk) θJC(t) = r(t) θJC θJC = 0.2 0. 2N5885 2N5884. TIME (ms) 20 50 100 200 500 1000 2000 Figure 4.01 0.5 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 10 VCE. 2N5886 (NPN) 0.5 0.5 tf 0.0 3. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 C.com 90 50 100 .e.5 1. Capacitance Figure 6.0 5.0 10 t.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .1 0.0 2N5883.0 5.5 0.0 20 30 50 70 5. Turn–Off Time http://onsemi.0 3.1 0. Thermal Response IC. The data of Figure 5 is based on TJ(pk) = 200C.0 0. 2N5886 (NPN) t. REVERSE VOLTAGE (VOLTS) Figure 7.0 7. the transistor must not be subjected to greater dissipation than the curves indicate. 500 µs TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883.05 0.2 0.0 10 IC.

1 0. DC CURRENT GAIN hFE .0 TJ = 25°C 1.0 VCE .0 IC.0 10 2.5 1. Collector Saturation Region 2. COLLECTOR CURRENT (AMPERES) 2.0 IC.6 V.0 2.0 A 20 A 0.0 V TJ = 150°C 20 0.5 0.5 1.0 2.6 1.2 IB.0 A 5.0 3. VOLTAGE (VOLTS) V.5 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 5.6 IC = 2.2 10 A 5.3 VCE = 4.0 IC.8 0.8 VBE @ VCE = 4 V 0.0 A 1. COLLECTOR CURRENT (AMPERES) Figure 10.7 1. “On” Voltages http://onsemi.7 1.0 2.0 7.01 0.0 10 Figure 9.6 IC = 2.4 0 0.0 5.com 91 20 30 .8 0.0 3.4 0 0. COLLECTOR CURRENT (AMPERES) 5.0 TJ = 25°C TJ = 25°C 1.0 10 20 0 30 0.0 V TJ = 150°C hFE .0 VCE(sat) @ IC/IB = 10 5.0 5. COLLECTOR CURRENT (AMPERES) 20 30 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.4 VCE(sat) @ IC/IB = 10 0 0. VOLTAGE (VOLTS) 1.0 7.3 20 30 0.2 VBE(sat) @ IC/IB = 10 0.2 0.4 0.3 0. DC Current Gain TJ = 25°C 1.0 3.0 3.0 A 10 A 20 A 1.3 0.05 0.0 7.2 0.7 1. BASE CURRENT (AMPERES) 0.5 0.2 VBE(sat) @ IC/IB = 10 0.0 0.0 10 2.0 5.0 7.02 0.7 1.8 VBE @ VCE = 4 V 1.5 0.01 0.05 0.0 10 IC.2N5883 2N5884 2N5885 2N5886 PNP DEVICES 2N5883 and 2N5884 300 200 100 70 50 1000 700 500 VCE = 4.02 2. COLLECTOR CURRENT (AMPERES) 10 0. DC CURRENT GAIN 1000 700 500 NPN DEVICES 2N5885 and 2N5886 25°C -55°C 30 300 200 100 70 50 25°C 30 -55°C 20 10 0.0 2.1 0.0 10 IC.

designed for general–purpose amplifier and low–speed switching applications.3 C/W (1) Indicates JEDEC Registered Data.5 0. 2001 – Rev.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc • • • *ON Semiconductor Preferred Device VCEO(sus) = 60 Vdc (Min) — 2N6035.012 Watts TJ.5 Adc @ 25 Vdc Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package DARLINGTON 4–AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60. LLC. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 2N6039 Forward Biased Second Breakdown Current Capability IS/b = 1.0 Adc Base Current IB 100 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 0. 2N6038 = 80 Vdc (Min) — 2N6036. .0 Vdc IC 4. 2001 March. Tstg –65 to +150 C Rating Collector–Emitter Voltage Collector Current — Continuous Peak Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance. 9 92 Publication Order Number: 2N6035/D . Junction to Ambient θJA 83. Junction to Case Characteristic θJC 3.32 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 1.  Semiconductor Components Industries.0 8. 2N6039 * • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.ON Semiconductor PNP 2N6035 Plastic Darlington Complementary Silicon Power Transistors 2N6036 * NPN 2N6038 .12 C/W Thermal Resistance. 80 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Symbol 2N6035 2N6038 2N6036 2N6039 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5. .

com 93 140 160 .0 40 3.0 20 1. Power Derating http://onsemi.0 30 TC 2. POWER DISSIPATION (WATTS) TA TC 4.0 10 0 0 TA 0 20 40 60 80 100 T.2N6035 2N6036 2N6038 2N6039 PD. TEMPERATURE (°C) 120 Figure 1.

2N6038 2N6036.0 500 750 100 — 15. IB = 40 mAdc) VBE(sat) — 4.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 2. 2N6036 2N6038. VCE = 3. VCE = 10 Vdc. 2N6038 2N6036.5 Vdc) (VCE = 60 Vdc. IB = 0) VCEO(sus) 2N6035. IB = 8. 2N6039 Vdc µA ICEO µA ICEX ICBO Emitter–Cutoff Current (VBE = 5. VBE(off) = 1.0 Adc.0 MHz) |hfe| 25 — — Output Capacitance (VCB = 10 Vdc.0 3. IB = 40 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 4.com 94 pF .1 MHz) Cob — — 200 100 DYNAMIC CHARACTERISTICS 2N6035. TC = 125C) 2N6035. IB = 0) (VCE = 80 Vdc. 2N6039 Collector–Cutoff Current (VCE = 60 Vdc. VCE = 3.0 Adc.5 Vdc. VBE(off) = 1.0 Vdc) VBE(on) — 2. 2N6038 2N6036.0 Adc. 2N6039 Collector–Cutoff Current (VCB = 60 Vdc. f = 1.0 Adc.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc.0 mAdc) (IC = 4.000 — — — 2.2N6035 2N6036 2N6038 2N6039 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 100 100 — — — — 100 100 500 500 — — 0. VCE = 3. IE = 0) (VCB = 80 Vdc. 2N6038 2N6036.0 Vdc) (IC = 2. 2N6039 Collector–Cutoff Current (VCE = 60 Vdc.5 0. VBE(off) = 1.5 — 2.0 Vdc Base–Emitter On Voltage (IC = 2. 2N6039 2N6035. IE = 0.5 Vdc) (VCE = 80 Vdc. http://onsemi.0 Adc. VCE = 3.5 Adc.5 Vdc. IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0. IB = 0) 2N6035. 2N6038 2N6036. IE = 0) 2N6035.75 Adc. 2N6039 *Indicates JEDEC Registered Data. VBE(off) = 1.0 Vdc) (IC = 4.0 Adc. TC = 125C) (VCE = 80 Vdc.8 Vdc Small–Signal Current–Gain (IC = 0. f = 0.0 Vdc.

2 0.0 RC TUT V2 approx +8.05 0.0% 0.6 0. D = t1/t2 0.0 4.0 t. NORMALIZED 2.05 0.2 0.3 0.0 0.04 0.07 0.5 IB1 = IB2 TJ = 25°C SCOPE RB 0 VCC = 30 V IC/IB = 250 ts 2.0 IC.02 0. eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA t. 0.0 2. D1 is disconnected and V2 = 0. COLLECTOR CURRENT (AMP) D = 0.03 0.2N6035 2N6036 2N6038 2N6039 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.01 0.1 P(pk) θJC(t) = r(t) θJC θJC = 3. Thermal Response http://onsemi.1 0.TC = P(pk) θJC(t) DUTY CYCLE.4 for td and tr. TIME (ms) 10 Figure 4.5 0.com 95 20 30 50 100 200 300 500 1000 . Switching Times Test Circuit 1.1 r(t). TRANSIENT THERMAL RESISTANCE.7 0.3 0.0 VCC -30 V 0.0 5.05 0.03 td @ VBE(off) = 0 PNP NPN Figure 2.2 0.0 V 4.4 0.5 1. tr.02 0.6 1.0 0.8 tr 0.0 V 25 µs tf 1.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) . Switching Times 0.06 For NPN test circuit. TIME (s) µ D1 51 V1 approx -12 V ≈ 8. reverse diode.01 0.0 k ≈ 60 +4.2 0. tf ≤ 10 ns DUTY CYCLE = 1.01 0.0 Figure 3.1 0. RB and RC are varied to obtain desired test currents.02 SINGLE PULSE 0.0 3. polarities and input pulses.2 0.

0 7.0 1.0 2.0 dc 1.2 70 20 10 30 50 VCE. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.7 0.0ms 3. 2N6035. COLLECTOR CURRENT (AMP) 1. 2N6038.0 dc 0. COLLECTOR CURRENT (AMP) 5.0 2.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.e. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C.0 7.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. REVERSE VOLTAGE (VOLTS) Figure 7.3 0.0 6.1 5.2 7.1 5.0 5.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0. The data of Figures 5 and 6 is based on TJ(pk) = 150C.com 96 20 40 . 2N6036 100 Figure 6.0 0.7 0.0 20 10 30 50 70 VCE.0 5.0 4. 2N6039 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 0.0ms 3. i. CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 10 0.6 1.2N6035 2N6036 2N6038 2N6039 ACTIVE–REGION SAFE–OPERATING AREA IC. TC is variable depending on conditions..0 2N6039 2N6038 7.0 100 µs IC.4 0. Capacitance http://onsemi. the transistor must not be subjected to greater dissipation than the curves indicate.0 2.0 10 VR.0 1. At high case temperatures.0 0.06 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.0 100 1.1 PNP NPN 0.5 2N6036 2N6035 100 µs 5. TJ(pk) may be calculated from the data in Figure 4. TC = 25°C C.04 0.

Collector Saturation Region 2.5 1.0 0.6 0.0 0.8 1.4 0.2 1.0 k 4.4 1.0 V 1.6 IC.8 VBE @ VCE = 3. COLLECTOR CURRENT (AMP) IC.0 V TJ = 125°C 4.0 k 25°C 2. 2N6039 6.04 0.2 0.6 0.2 1.06 0.0 k 25°C 2.0 k 800 600 400 300 0.0 A 4.1 0.1 0.2 0.2 1. COLLECTOR CURRENT (AMP) 2. DC CURRENT GAIN hFE .0 10 IB.04 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 3.0 10 IB.0 k -55°C 1.6 0.0 VCE(sat) @ IC/IB = 250 0.4 TJ = 25°C 3. COLLECTOR CURRENT (AMP) 3.0 IC.06 1. VOLTAGE (VOLTS) V.0 2.6 1.0 k 3.0 2.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.6 VCE .0 4. VOLTAGE (VOLTS) 1.5 5.0 0.0 5. BASE CURRENT (mA) 20 50 100 Figure 9.0 VCE = 3.0 k 800 600 400 300 0.4 1. “On” Voltages http://onsemi.0 k -55°C 1.6 1.0 k hFE .0 0.0 4. BASE CURRENT (mA) 20 50 100 3. 2N6036 NPN 2N6038. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.04 0.8 VBE(sat) @ IC/IB = 250 V.4 1.0 0.0 V TC = 125°C 0.06 4. DC Current Gain IC = 0.5 A 1.1 0. COLLECTOR CURRENT (AMP) Figure 10.06 2.0 A 2.0 VCE(sat) @ IC/IB = 250 0.2 2.6 0.2 0.2N6035 2N6036 2N6038 2N6039 PNP 2N6035.1 0.2 TJ = 25°C TJ = 25°C 1.1 0.0 .0 0.2 0. DC CURRENT GAIN VCE = 3.0 k 6.2 2.4 0.5 A TJ = 25°C 1.8 1.2 0.4 0.4 0.0 2.0 1.0 2.04 0.4 3.0 4.1 0.0 A 2.6 IC = 0.0 A 2.2 0.0 A 4.6 IC.0 2.0 V 1.com 97 2.0 A 1.

2N6043 = 100 Vdc (Min) – 2N6042.0 Adc • Collector–Emitter Sustaining Voltage – @ 100 mAdc – VCEO(sus) = 60 Vdc (Min) – 2N6040. LLC.67 C/W θJA 57 C/W Thermal Resistance. .0 60 TC 2. 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors *ON Semiconductor Preferred Device DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–100 VOLTS 75 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol 2N6040 2N6043 2N6042 2N6045 Unit VCEO 60 100 Vdc Collector–Base Voltage VCB 60 100 Vdc Emitter–Base Voltage VEB 5. • High DC Current Gain – hFE = 2500 (Typ) @ IC = 4.0 Vdc Collector Current – Continuous Peak IC 8. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries.0 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 75 0.0 80 3.0 Vdc (Max) @ IC = 4.0 20 0 0 0 20 40 60 80 100 T. designed for general–purpose amplifier and low–speed switching applications. POWER DISSIPATION (WATTS) Thermal Resistance. 2001 May.0 Vdc (Max) @ IC = 3.0 Adc – 2N6043. Junction to Case PD. TEMPERATURE (°C) 120 140 160 Figure 1. Junction to Ambient (1) Indicates JEDEC Registered Data. 2001 – Rev. 4 98 Publication Order Number: 2N6040/D .0 Adc – 2N6042.0 40 TA 1.44 = 2.ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . 2N6045 • Low Collector–Emitter Saturation Voltage – VCE(sat) = 2. TA TC 4.60 Watts W/C TJ. . Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 1. Tstg –65 to +150 C Operating and Storage Junction.

5 Vdc. VCE = 4.7 1. VBE(off) = 1.5 0. IB = 0) VCEO(sus) 2N6040.0 V 25 µs tr.0 Vdc) VBE(on) – 2.0 RC TUT V2 approx +8. 2N6043.0 IC. 2N6045 2N6040. TC = 150C) (VCE = 80 Vdc.07 td @ VBE(off) = 0 V NPN 0.0 for td and tr.0 7. f = 1.0 Vdc.0 Adc.0 tf 0.000 20. 2N6043 – 2N6042.0 Vdc. 2N6045 ICEO Collector Cutoff Current (VCE = 60 Vdc. IB = 0) (VCE = 100 Vdc. 2N6042.0 Vdc) (IC = 3.0 MHz) |hfe| 4.0 Adc. IE = 0. 2N6043 Vdc 2N6042. t. Switching Times Equivalent Circuit Figure 3.0 1000 1000 100 20. 2N6044 2N6042. 2N6045 All Types – VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 8.0 – Output Capacitance (VCB = 10 Vdc.0 Adc. 2N6043.0 k ≈120 +4.com 99 tr 5.0 kHz) *Indicates JEDEC Registered Data.0 VCC -30 V SCOPE RB 51 0 V1 approx -12 V D1 ≈ 8.0 10 .0 Vdc) (IC = 8. VBE(off) = 1. 2N6042.0 4.0 Adc. 5.0 Adc. IB = 80 mAdc) VBE(sat) – 4. tf ≤ 10 ns DUTY CYCLE = 1. VCE = 4. VCE = 4.7 0. IB = 16 mAdc) (IC = 3.0 µA ICEX µA ICBO (VCB = 100 Vdc.1 MHz) Cob – – 300 200 pF hfe 300 – – DYNAMIC CHARACTERISTICS 2N6040/2N6042 2N6043/2N6045 Small–Signal Current Gain (IC = 3. 2N6043 2N6041.5 Vdc Base–Emitter On Voltage (IC = 4.000 – – – – 2. TC = 150C) (VCE = 100 Vdc. IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 4. TIME (s) µ RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.5 Vdc) (VCE = 60 Vdc.0 Adc.0 V 3. D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1.5 Vdc. TC = 150C) 2N6040.8 Vdc Small Signal Current Gain (IC = 3. VCE = 4. IB = 12 mAdc) (IC = 8. VCE = 4. f = 1.0 2.0 3. VBE(off) = 1.3 0.0 Adc. 2N6045 – 20 – 2.05 0. eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 1.2 0. 2N6043 2N6042.3 0.0 2. VBE(off) = 1. f = 0. 2N6045 Collector Cutoff Current (VCB = 60 Vdc. IB = 0) 2N6040. 2N6045 All Types hFE Collector–Emitter Saturation Voltage (IC = 4. 2N6045 – µA Collector Cutoff Current (VCE = 60 Vdc.5 Vdc.0 Vdc) 2N6040.0% ts 2.5 0. IE = 0) Emitter Cutoff Current (VBE = 5.2N6040 2N6042 2N6043 2N6045 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 100 – – – 20 20 – – – – – 20 20 200 200 200 20 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc.0 Adc. VCE = 4. 2N6043 2N6042.1 0. IB = 80 Adc) 2N6040. Switching Times http://onsemi. VBE(off) = 1.5 Vdc) (VCE = 100 Vdc. IE = 0) 2N6040.0 Adc.0 Vdc.0 Adc. COLLECTOR CURRENT (AMP) Figure 2.1 TJ = 25°C PNP 0.

1 PNP NPN 0. COLLECTOR CURRENT (AMP) 10 5.0 5. SMALL-SIGNAL CURRENT GAIN 10. At high case temperatures. i.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040.0 10 t.0 10 2.r(t).05 0. 100 µs IC. the transistor must not be subjected to greater dissipation than the curves indicate.0 Vdc IC = 3.5 D = 0.1 0.e.0 1.0 Cib 70 50 PNP NPN 2.2 0. The data of Figure 5 is based on TJ(pk) = 150C.0 Cob 100 10 20 50 100 f.0 Adc 100 50 30 20 10 1.5 0. TC is variable depending on conditions.2 P(pk) θJC(t) = r(t) θJC θJC = 1.05 0.3 0.05 0.com 100 50 100 .. CAPACITANCE (pF) hfe. Thermal Response 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.03 SINGLE PULSE 0.67°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) . Capacitance Figure 6.TC = P(pk) θJC(t) DUTY CYCLE.02 0.5 0.0 500 µs 1.0 2.01 0.0 0.02 1.1 0.0 7. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.02 0.3 0.2 0.0 20 30 5.7 0.0 0. TJ(pk) may be calculated from the data in Figure 4.0 5. D = t1/t2 0.000 1000 500 300 200 TC = 25°C VCE = 4.03 0.2 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C.05 0.01 0.0 50 VCE.0 5. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 3.1 0.2 0.0 3.01 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. 2N6043 2N6045 2.02 0.1 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6040 2N6042 2N6043 2N6045 1.0 10 20 VR.0ms dc 5.0 2. FREQUENCY (kHz) 500 1000 200 30 0. TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Small–Signal Current Gain http://onsemi. Active–Region Safe Operating Area 300 5000 3000 2000 200 TJ = 25°C C.5 1.07 0. REVERSE VOLTAGE (VOLTS) Figure 7.5 1.

VOLTAGE (VOLTS) 2.5 2. COLLECTOR CURRENT (AMP) 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .000 VCE = 4.0 3.0 7.0 0.2 1.0 2.5 7.0 0. DC CURRENT GAIN 10.0 7.0 5.0 20 5.6 IC = 2.0 0.0 3.000 20.0 3.5 V.1 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.7 1. 2N6045 20.5 VBE @ VCE = 4. 2N6042 NPN 2N6043.0 V VBE(sat) @ IC/IB = 250 1.1 0.7 VBE(sat) @ IC/IB = 250 1.7 1.0 1.0 3.6 IC = 2.5 0.3 0.0 3.0 10 2.0 VCE(sat) @ IC/IB = 250 0.0 V 10.0 3.0 IC.0 A 4. COLLECTOR CURRENT (AMP) 5.5 0.0 A 2.0 7.5 0.0 IC.7 1. BASE CURRENT (mA) 30 3.5 0.1 10 0.5 0.0 IB.0 IB.3 0. VOLTAGE (VOLTS) V.3 IC.com 101 5.2N6040 2N6042 2N6043 2N6045 PNP 2N6040.2 1.0 10 Figure 9.0 10 3.2 0.5 0.0 2.3 0.0 IC.0 VCE .0 2.010 VCE(sat) @ IC/IB = 250 0.1 0.0 2.3 0.0 TJ = 25°C 2.0 2.4 1. DC CURRENT GAIN hFE .5 0.4 1.0 .000 hFE .0 TJ = 25°C TJ = 25°C 2.7 1.0 3.0 V 1.7 1.8 1.0 A 6.0 1.0 5.0 VCE = 4.8 1. BASE CURRENT (mA) 10 20 30 7. COLLECTOR CURRENT (AMP) 0.2 0.0 A 2.0 7. COLLECTOR CURRENT (AMP) Figure 10. Collector Saturation Region 3.0 A 6.5 VBE @ VCE = 4.3 0.0 V 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 -55°C 300 200 0.2 0.2 0. DC Current Gain TJ = 25°C 2.0 0.0 A 4.000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 -55°C 300 200 0. “On” Voltages http://onsemi.

POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC. 2 102 Publication Order Number: 2N6052/D . LLC. 2001 March.857 W/C –65 to +200C C Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range TJ. .  Semiconductor Components Industries. Tstg CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 100 Vdc (Min) — 2N6052.2 Adc Total Device Dissipation @TC = 25C Derate above 25C PD 150 Watts 0.17 C/W (1) Indicates JEDEC Registered Data. PD. 2N6059 Monolithic Construction with Built–In Base–Emitter Shunt Resistors *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ • DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 150 WATTS MAXIMUM RATINGS (1) Symbol 2N6058 2N6052 2N6059 Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base voltage VEB 5. . CASE TEMPERATURE (°C) 175 200 Figure 1. 2001 – Rev. • High DC Current Gain — • hFE = 3500 (Typ) @ IC = 5.0 Vdc Collector Current — Continuous Peak IC 12 20 Adc Base Current IB 0.ON Semiconductor Darlington Complementary Silicon Power Transistors PNP 2N6052* NPN 2N6058 2N6059* . designed for general–purpose amplifier and low frequency switching applications. Junction to Case Symbol Rating Unit RθJC 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

tf ≤ 10 ns DUTY CYCLE = 1. f = 1.com 103 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 10 20 .0 Adc.0 Adc. IB = 0) Vdc ICEO mAdc 2N6058 2N6052. TC = 150C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc) (IC = 12 Adc.000 — — — 2. f = 0. IB = 0) (VCE = 50 Vdc.0% 2N6052 2N6059 5.0 Vdc Base–Emitter On Voltage (IC = 6. RC V1 approx -8. Switching Times Test Circuit 0.5 td @ VBE(off) = 0 for td and tr.0 Adc. 2N6059 Collector Cutoff Current (VCE = 40 Vdc. IE = 0. f = 1. Figure 2. VCE = 3. VCE = 3.0 — 2.0 k t.0 Vdc.0 Vdc.8 Vdc |hfe| 4.1 0.0 MHz) Output Capacitance (VCB = 10 Vdc.5 Vdc. TIME (s) µ 51 ts SCOPE RB 0 ≈ 50 +4. (2) Pulse test: Pulse Width = 300 µs. Switching Times http://onsemi.0 750 100 18. IB = 120 mAdc) VBE(sat) — 4.0 — MHz Cob — — 500 300 pF hfe 300 — — DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small–Signal Short Circuit Forward Current Transfer Ratio (IC = 5.2N6052 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 1.2 0. Duty Cycle = 2.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 6.0 Vdc.0 — 0.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 100 mAdc. IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 6. VCE = 3.5 Vdc) (VCE = Rated VCEO.0 V 25 µs tr.0 tf 1.0 tr 0. IB = 120 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 12 Adc.0%. VCE = 3.0 1.2 For NPN test circuit reverse diode and voltage polarities. IB = 0) VCEO(sus) 2N6058 2N6052. VCE = 3.5 1.0 V D1 ≈ 5.0 TUT V2 approx +8.0 Adc.1 MHz) 2N6052 2N6058/2N6059 Small–Signal Current Gain (IC = 5. eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 2. D1 is disconnected and V2 = 0 0. COLLECTOR CURRENT (AMP) Figure 3.0 V 10 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE. VBE(off) = 1.0 Adc. IB = 24 mAdc) (IC = 12 Adc.5 5. VBE(off) = 1. 2N6059 Collector Cutoff Current (VCE = Rated VCEO.0 3.0 kHz) *Indicates JEDEC Registered Data.0 3.0 Vdc) VBE(on) — 2.0 IC.0 5.

5 1.2 BONDING WIRE LIMITED 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6052.0 2.1 0. 2N6059 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 SECOND BREAKDOWN LIMITED 0. TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4.2 0.0 0.0 3.1 0.0 ms 5. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C.0 ms TJ = 200°C SECOND BREAKDOWN LIM ITED BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) d c 50 70 20 30 VCE.0 0.1 ms 20 IC.0 ms 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 0. TC is variable depending on conditions. i.01 0.05 10 1.02 0.1 ms 20 10 20 30 d c 50 70 100 VCE.1 THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 0. and 7 is based on TJ(pk) = 200C.0 TJ = 200°C 0. TJ(pk) may be calculated from the data in Figure 4.02 SINGLE PULSE 0. Thermal Response ACTIVE–REGION SAFE OPERATING AREA 50 0.05 100 0.05 0. The data of Figures 5..TC = P(pk) θJC(t) DUTY CYCLE.1 0.17°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) .0 1.5 ms 2.3 0.0 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 1.0 2. COLLECTOR CURRENT (AMP) IC. COLLECTOR CURRENT (AMP) 50 10 5.2 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6052 1.0 5.7 0.5 ms 5.5 D = 0.1 0.5 0.05 0. D = t1/t2 0.0 t.02 0.e.03 0. the transistor must not be subjected to greater dissipation than the curves indicate.3 0.r(t). 6.07 0.0 ms 1.01 0. 2N6058 Figure 6.2 0.01 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.03 0. At high case temperatures.5 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC = 1. http://onsemi.2 0.com 104 .

REVERSE VOLTAGE (VOLTS) Figure 8.0 10 20 VR.500 3000 2000 TC = 25°C VCE = 3.0 2. SMALL-SIGNAL CURRENT GAIN 2N6052 Cib 200 Cob 100 2N6052 2N6058/2N6059 70 200 50 0.0 V IC = 5.0 5.0 10 20 50 100 f.5 1.2 0. FREQUENCY (kHz) TJ = 25°C 300 C.0 A 1000 500 200 100 2N6052 2N6058/2N6059 50 30 1. CAPACITANCE (pF) hfe.0 5.com 105 50 100 .1 500 1000 0. Small–Signal Current Gain http://onsemi.0 2. Capacitance Figure 7.

3 20 10 25°C 0. COLLECTOR CURRENT (AMP) Figure 11. DC CURRENT GAIN 10.000 2.2 1.0 3.3 VBE @ VCE = 3.000 VCE = 3.0 A 12 A 2.5 0. VOLTAGE (VOLTS) 2.0 2.0 2.2 0.5 1. Collector Saturation Region 3.0 A 6.0 IC. COLLECTOR CURRENT (AMP) IC. DC Current Gain 3.000 hFE .6 IC = 3. COLLECTOR CURRENT (AMP) 6.0 A 12 A 2.0 3.0 1.0 A 6.0 A 9.5 2.0 3.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.0 2.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3. 2N6059 40.0 TJ = 25°C TJ = 25°C 2.5 VBE(sat) @ IC/IB = 250 1.0 50 Figure 10.6 TJ = 25°C IC = 3.000 5000 3000 25°C 2000 1000 VCE = 3.0 0.0 V TJ = 150°C 20.000 1.0 3.0 2.0 5.000 4.0 3.4 1.5 V.0 3.0 5.0 IC.0 V 1.0 TJ = 25°C 2.5 1. VOLTAGE (VOLTS) V.8 1.000 20. COLLECTOR CURRENT (AMP) 10 20 3.4 1.0 A 9.0 0.5 0.5 5.2 1.0 V -55°C 500 300 200 0.3 0.0 5.8 1.0 20 30 5.5 1. DC CURRENT GAIN hFE . “On” Voltages http://onsemi. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 2.0 10 IB.2 0.com 106 10 20 .0 10 20 0.0 1.2 0.5 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9.3 0.0 IC.0 3.0 0.5 1.000 TJ = 150°C 10. BASE CURRENT (mA) 50 VCE .0 1.0 5.0 10 IB.2N6052 PNP 2N6052 NPN 2N6058.000 -55°C 600 400 0.0 V 1.0 2. BASE CURRENT (mA) 20 30 2.2 0.

 Semiconductor Components Industries. designed for use in general–purpose amplifier and switching applications.0 Amperes • • 2N6288 hFE = 30–150 @ IC = 3. . 09. 2N6288 = 2.32 Watts W/C TJ.0 Adc — 2N6111.0 Adc — All Devices Collector–Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) — 2N6111.0 10 Adc Base Current IB 3. 2001 – Rev. Tstg –65 to +150 C Rating Collector–Emitter Voltage Collector Current — Continuous Peak Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance.125 C/W *Indicates JEDEC Registered Data.3 (Min) @ IC = 7. 90. 2N6111 2N6109 * NPN • DC Current Gain Specified to 7. Junction to Case Symbol Max Unit RθJC 3.0 MHz (Min) @ IC = 500 mAdc — 2N6288.0 Vdc IC 7. LLC. 2N6292 High Current Gain — Bandwidth Product fT = 4. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 92 = 10 MHz (Min) @ IC = 500 mAdc — 2N6107. 11 TO–220AB Compact Package 2N6292* *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ • 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30–50–70 VOLTS 40 WATTS *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 50 70 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5.ON Semiconductor PNP Complementary Silicon Plastic Power Transistors 2N6107 . 2001 March. 2N6288 = 50 Vdc (Min) — 2N6109 = 70 Vdc (Min) — 2N6107.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 0. . 4 107 Publication Order Number: 2N6107/D .

Power Derating http://onsemi. POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC.com 108 140 160 .2N6107 2N6109 2N6111 2N6288 2N6292 PD. CASE TEMPERATURE (°C) Figure 1.

(1) Pulse Test: Pulse Width  300 µs. 2N6288 2N6109 2N6107.5 Vdc. 2N6288 2N6109 2N6107.0 — 1.0 MHz) Cob — 250 pF Small–Signal Current Gain (IC = 0.0 Vdc 4.5 Vdc) (VCE = 80 Vdc. VEB(off) = 1. VCE = 4. 11 MHz Output Capacitance (VCB = 10 Vdc.5 Vdc. 2N6288 All Devices — Collector–Emitter Saturation Voltage (IC = 7. 2N6292 2N6109 2N6111. IB = 3. ftest = 1. TC = 150C) (VCE = 70 Vdc.5 Vdc) (VCE = 60 Vdc.0 Vdc.0%. 2N6292 Collector Cutoff Current (VCE = 40 Vdc. VCE = 4.0 Adc) VCE(sat) — 3. VEB(off) = 1.5 Vdc Base–Emitter On Voltage (IC = 7.5 Adc.5 Vdc) (VCE = 30 Vdc. VEB(off) = 1.0 MHz) fT 2N6288.0 Adc. IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 2. VEB(off) = 1.0 Vdc) VBE(on) — 3. VEB(off) = 1.0 Vdc. VCE = 4. f = 1. VCE = 4.5 Adc.0 Vdc) hFE 2N6107. VCE = 4. 2N6292 Collector Cutoff Current (VCE = 20 Vdc.0 Vdc) (IC = 7.0 10 — — DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (2) (IC = 500 mAdc.0 30 30 30 2. 2N6292 2N6111.0 Adc. TC = 150C) (VCE = 50 Vdc.2N6107 2N6109 2N6111 2N6288 2N6292 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 30 50 70 — — — — — — 1.0 2. Duty Cycle  2. IE = 0.5 Vdc.0 Adc. (2) fT = |hfe| • ftest. IB = 0) (VCE = 40 Vdc.0 2. TC = 150C) 2N6111. IB = 0) VCEO(sus) 2N6111.com 109 . IB = 0) (VCE = 60 Vdc.3 150 150 150 — Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc.0 — — — — — — 100 100 100 2.0 Vdc) (IC = 2. f = 50 kHz) hfe 20 — — *Indicates JEDEC Registered Data. 2N6288 2N6109 2N6107.0 Adc. 09. VCE = 4. 2N6288 2N6109 2N6107. 92 2N6107.0 Adc. http://onsemi. VEB(off) = 1.0 Vdc. IB = 0) 2N6111. 2N6292 Vdc ICEO mAdc µAdc ICEX Emitter Cutoff Current (VBE = 5.0 1. VCE = 4.0 1.0 Vdc) (IC = 3.

2 0.0 2.2 1.1 ms dc 0. The data of Figure 5 is based on TJ(pk) = 150C. TIME (s) µ RB D1 51 -9.0 t.5 0.0 5.02 0.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.5 0.com 110 .0 0.0 20 30 50 5. eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.0 RC +11 V SCOPE 0 t. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.15 1.07 0.0 k Figure 4.05 0.0 1. TC is variable depending on conditions..05 0.5 ms 7.0 3.0 0.1 0.05 ZθJC(t) = r(t) RθJC RθJC = 3. TJ(pk) may be calculated from the data in Figure 4. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.TC = P(pk) ZθJC(t) 0.0 10 VCE.3 0.07 0.0 3. Turn–On Time D = 0.0% TJ = 25°C VCC = 30 V IC/IB = 10 0. COLLECTOR CURRENT (AMPS) 15 10 0.5 3.3 0.0 ms 70 100 Figure 5. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 D1 MUST BE FAST RECOVERY TYPE.01 0.3 0.0 V 0.05 td @ VBE(off) ≈ 5. Switching Time Test Circuit 1.03 0.2 0.0 V -4 V tr.03 0. Active–Region Safe Operating Area http://onsemi.7 0.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 2. Thermal Response IC.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 2.0 5.02 0. D = t1/t2 100 200 500 1.2 tr 0.01 0.5 2.0 7. At high case temperatures. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. tf ≤ 10 ns DUTY CYCLE = 1. TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE.07 0.0 1.2N6107 2N6109 2N6111 2N6288 2N6292 VCC +30 V 25 µs 2. COLLECTOR CURRENT (AMP) r(t).2 0. 0.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .1 0. i.0 Figure 3.5 RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.7 0.0 IC.0 7.0 5.2 0.0 0.02 0.1 0. the transistor must not be subjected to greater dissipation than the curves indicate.1 0.7 0.0 1.01 SINGLE PULSE 0.02 0.e.

5 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C.07 0.0 VR.0 0.2 0.0 tr 0. CAPACITANCE (pF) 3.1 TJ = 25°C Cib 100 70 Cob 50 0.0 5.5 2. REVERSE VOLTAGE (VOLTS) Figure 7. Turn–Off Time 1.05 0. COLLECTOR CURRENT (AMP) 30 0.com 111 30 50 .0 Figure 6. Capacitance http://onsemi.0 IC.0 7.7 0.3 0.0 3.2N6107 2N6109 2N6111 2N6288 2N6292 5.07 0.0 3.0 ts 1. TIME (s) µ 2.3 0.0 1.0 300 t.2 0.5 5.0 10 20 2.1 0.

.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 160 0. CASE TEMPERATURE (°C) 175 200 Figure 1. 2001 – Rev. designed for general–purpose amplifier and low–frequency switching applications.915 Watts W/C Operating and Storage Junction Temperature Range TJ.09 C/W *Indicates JEDEC Registered Data. LLC. POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 100 125 75 150 TC. 2001 May.Tstg –65 to +200 C Rating Collector–Emitter Voltage CASE 1–07 TO–204AA (TO–3) *THERMAL CHARACTERISTICS Characteristic Thermal Resistance. PD.0 Vdc Collector Current – Continuous Peak IC 20 40 Adc Base Current IB 0.ON Semiconductor NPN Darlington Complementary Silicon Power Transistors 2N6283 . Power Derating  Semiconductor Components Industries. 2N6286 2N6284 PNP • High DC Current Gain @ IC = 10 Adc – • • 2N6287 hFE = 2400 (Typ) – 2N6284 = 4000 (Typ) – 2N6287 Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built–In Base–Emitter Shunt Resistors DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Symbo l 2N6283 2N6286 2N6284 2N6287 Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB 5. . 1 112 Publication Order Number: 2N6284/D . Junction to Case Symbol Max Unit RθJC 1.

com 113 pF – . VCE = 3.0 MHz) Output Capacitance (VCB = 10 Vdc. 2N6287 Small–Signal Current Gain (IC = 10 Adc. TC = 150C) ICEX Emitter Cutoff Current (VBE = 5. IB = 0) ICEO Collector Cutoff Current (VCE = Rated VCB.0 Vdc) (IC = 20 Adc. VCE = 3.5 Vdc) (VCE = Rated VCB. VCE = 3.0 3. IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc.0 Vdc. f = 1. IB = 0) (VCE = 50 Vdc.1 MHz) Cob 2N6283.0 – – 0.0 Vdc |hfe| 4.2N6283 2N6284 2N6286 2N6287 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 – – – – 1. IB = 200 mAdc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 10 Adc.0 Vdc. 2N6284 2N6286. VCE = 3.0 – MHz – – 400 600 300 – DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio (IC = 10 Adc. VBE(off) = 1.0 Vdc. VCE = 3. IB = 200 mAdc) VBE(sat) – 4.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 0.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 10 Adc.5 Vdc.1 Adc. IE = 0. Duty Cycle = 2% http://onsemi.0 – 2.0 1. VBE(off) = 1. f = 0.0 Vdc) VBE(on) – 2. 2N6287 Collector Cutoff Current (VCE = 40 Vdc.5 5. f = 1. IB = 40 mAdc) (IC = 20 Adc.0 750 100 18. 2N6286 2N6284.000 – – – 2.8 Vdc Base–Emitter Saturation Voltage (IC = 20 Adc. IB = 0) VCEO(sus) 2N6283.0 kHz) hfe *Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 µs.

3 0.0 r(t). Switching Times 0.0 3.1 0.0 0.TC = P(pk) RθJC(t) 0.02 0.09°C/W MAX 0.07 0.30 V 1. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.2N6283 2N6284 2N6286 2N6287 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RB V2 RC TUT APPROX + 8. COLLECTOR CURRENT (AMP) 0.2 0.01 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.3 VCC = 30 Vdc I /I = 250 0.0 5. Switching Times Test Circuit 1.05 0.0 SCOPE t.3 0.2 0.0 3.2 0..0 VCC .7 0.0 5.0 10 t.g.5 Figure 2.5 0.1 0.5 0.0 7.2 C B IB1 = IB2 td @ VBE(off) = 0 V TJ = 25°C 0. TIME (s) µ D1 MUST BE FAST RECOVERY TYPE e.01 0.0 V 0 51 V1 APPROX 25 µs .2 0.7 0.03 tr 0.1 0.1 0.0% D1  8.0 5.5 2N6284 (NPN) 2N6287 (PNP) 3.02 tf 1.5 20 Figure 3. D = t1/t2 100 200 300 500 1000 .0 2.0 0.03 0. TIME OR PULSE WIDTH (ms) Figure 4.3 IC. D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 2.05 0.12 V tr.7 1.01 SINGLE PULSE 0.com 114 20 30 50 t1 t2 DUTY CYCLE. Thermal Response http://onsemi.0 V FOR td AND tr.05 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . tf  10 ns DUTY CYCLE = 1. 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA 10 7.0 k ts  50 + 4.0 10 0.0 2.

COLLECTOR CURRENT (AMP) 50 20 0. REVERSE VOLTAGE (VOLTS) Figure 7.com 115 50 100 .0 1. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.0 Cib 200 50 20 TJ = 25°C 700 C.0 10 20 50 100 VCE.0 Vdc IC = 10 A 5000 2000 1000 500 200 100 500 300 10 2. i.0 ms 2.0 5. FREQUENCY (kHz) Cob 2N6284 (NPN) 2N6287 (PNP) 2N6284 (NPN) 2N6287 (PNP) 1.000 200 100 0.5 ms 10 1.2 500 1000 Figure 6. 2N6284. Capacitance http://onsemi. the transistor must not be subjected to greater dissipation than the curves indicate.0 10 20 50 100 f.1 0.0 2. 0. 2N6287 1000 TJ = 25°C VCE = 3. At high case temperatures.2 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C SINGLE PULSE 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.0 5.5 1.05 2.5 0.0 10 20 VR. CAPACITANCE (PF) hFE. Small–Signal Current Gain 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C.0 ms 5. SMALL-SIGNAL CURRENT GAIN 10.2N6283 2N6284 2N6286 2N6287 ACTIVE–REGION SAFE OPERATING AREA IC.1 ms dc TJ = 200°C 0. TJ(pk) may be calculated from the data in Figure 4. TC is variable depending on conditions.0 5.e.1 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. The data of Figure 5 is based on TJ(pk) = 200C.0 5.

2 1.0 1.2 0.0 10 0.0 3.8 1. Collector Saturation Region 3.7 1.0 2.3 VCE = 3.0 5. DC CURRENT GAIN 20.0 A 10 A 15 A 2.000 20. BASE CURRENT (mA) 20 30 50 Figure 9.7 1.4 1.0 3.0 2.0 10 IB.0 A 15 A 10 A 2.3 0.5 0.0 10 IB.0 V 2.0 5.2 1. “On” Voltages http://onsemi.0 3.0 5. COLLECTOREMITTER VOLTAGE (VOLTS) VCE .0 2.0 10 IC.0 1.5 2.2 0.0 0.7 1.5 20 0.000 7000 5000 VCE = 3.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.5 0.2 0. COLLECTOREMITTER VOLTAGE (VOLTS) Figure 8.0 7.5 VBE(sat) @ IC/IB = 250 1.7 1.5 V.0 3.4 1.6 IC = 5. VOLTAGE (VOLTS) TJ = 25°C 2.0 2.5 0.5 0.5 0.0 V VCE(sat) @ IC/IB = 250 0.0 5. BASE CURRENT (mA) 30 50 3.0 10 VCE(sat) @ IC/IB = 250 0. COLLECTOR CURRENT (AMP) 0.8 1.0 TJ = 25°C 2.0 20 2.000 3000 2000 1000 700 hFE.0 IC.0 0.5 0.5 1.0 2.com 116 20 . COLLECTOR CURRENT (AMP) Figure 10.7 1.0 7.2 0.0 VBE @ VCE = 3.0 V 30.0 3.6 IC = 5.0 7. DC Current Gain TJ = 25°C 2.3 20 0. COLLECTOR CURRENT (AMP) 20 3.000 PNP 2N6287 25°C -55°C 500 300 200 5.3 IC. DC CURRENT GAIN 10.0 7.0 VCE .000 TJ = 150°C 10.0 7.0 10 IC.0 7.0 3.0 V TJ = 150°C 7000 5000 25°C 3000 2000 -55°C 1000 700 500 300 0. VOLTAGE (VOLTS) V.0 5.7 1. COLLECTOR CURRENT (AMP) 0.0 TJ = 25°C 2.0 3.5 0.2N6283 2N6284 2N6286 2N6287 NPN 2N6284 hFE.

Darlington Schematic http://onsemi.3 -55°C to + 25°C 0.0 +4.6 -0.8 +1.2 -1.4 .0 -55°C to + 25°C 0 -1.2 +0. COLLECTOR CURRENT (A) µ 105 100°C REVERSE FORWARD 100 102 VCE = 30 V TJ = 150°C 101 100°C 100 10-1 REVERSE 10-2 FORWARD 25°C 25°C 10-1 -0.0 25°C to 150°C +1.0 2.0 7.2N6283 2N6284 2N6286 2N6287 PNP 2N6287 +5.0 -5.4 +0.0 VBE.0V 250 +2.7 1.0 5.0 25°C to + 150°C θVB for VBE -4.com 117 -1.3 0.0 hFE@VCE  3.0 -55°C to + 25°C 0 -1.4 -0.0 2.2 0 +0.4 VBE.0 10 20 IC. TEMPERATURE COEFFICIENTS (mV/°C) NPN 2N6284 *θVC for VCE(sat) 25°C to + 150°C θVB for VBE 0.2 0.2 + 1.5 IC.0 -55°C to + 25°C 0.0 -3.0 3.0 -5.0 -2. BASE-EMITTER VOLTAGE (VOLTS) +0.0 +4.0V 250 +2.0 +3. Collector Cut–Off Region COLLECTOR NPN 2N6284 COLLECTOR PNP 2N6287 BASE BASE  8.2 0.0 k EMITTER  60 EMITTER Figure 13.0 5.0 7.0 *APPLIES FOR IC/IB ≤ +3.0 10 20 +5. BASE-EMITTER VOLTAGE (VOLTS) Figure 12.0 *APPLIES FOR IC/IB ≤ hFE@VCE  3.6 +0. COLLECTOR CURRENT (A) µ IC.8 -1. COLLECTOR CURRENT (AMP) Figure 11.2 0 -0.4 +1. COLLECTOR CURRENT (AMP) 0.0 *θVC for VCE(sat) -2.2 -0.0 10-3 +0.0 25°C to 150°C +1.0 -3.4 -0.6 -0.0 3.0 θV.0 k  60  8.5 0.0 -4.7 1. TEMPERATURE COEFFICIENTS (mV/°C) θV.6 +0. Temperature Coefficients 104 103 103 VCE = 30 V TJ = 150°C 102 101 IC.

designed for use in industrial–military power amplifier and switching circuit applications. 120.3 ms (Max) ts = 1. 140.0 CASE 1–07 TO–204AA (TO–3) Vdc Adc 25 50 Operating and Storage Junction Temperature Range TJ.875 C/W 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC. 10 118 Publication Order Number: 2N6338/D .14 Watts W/°C –65 to +200 C THERMAL CHARACTERISTICS Characteristic PD. CASE TEMPERATURE (°C) Figure 1.  Semiconductor Components Industries.0 ms (Max) tf = 0. 200 Symbol Max Unit θJC 0.25 ms (Max) *ON Semiconductor Preferred Device 25 AMPERE POWER TRANSISTORS NPN SILICON 100. 150 VOLTS 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Symbol 2N6338 2N6341 Unit VCB 120 180 Vdc VCEO 100 150 Vdc VEB Collector Current Continuous Peak IC Base Current IB Total Device Dissipation @ TC = 25C Derate above 25C PD 6. LLC. Tstg 10 Adc 200 1. POWER DISSIPATION (WATTS) Thermal Resistance.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 2001 May. • High Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min) – 2N6338 = 150 Vdc (Min) – 2N6341 • High DC Current Gain – hFE = 30 – 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = 1.ON Semiconductor High-Power NPN Silicon Transistors 2N6338 2N6341* . Junction to Case *Indicates JEDEC Registered Data. 2001 – Rev. . .

IB1 = IB2 = 1.5 Adc) VBE(sat) Base–Emitter On Voltage (IC = 10 Adc.5. IB = 0) 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc.5 Vdc.0 Vdc) tr – 0. ftest = 10 MHz) fT 40 – MHz Cob – 300 pF Rise Time (VCC ≈ 80 Vdc. IE = 0) ICBO – 10 µAdc Emitter Cutoff Current (VBE = 6. IB = 2.0 µs Fall Time (VCC ≈ 80 Vdc.0 IC.2N6338 2N6341 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 150 – – Vdc – – 50 50 – – 10 1. IC = 10 Adc.0 Vdc) hFE – Collector Emitter Saturation Voltage (IC = 10 Adc. VBE(off) = 6.3 NOTE: For information on Figures 3 and 6.0 Vdc.0 µAdc mAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 50 mAdc.1 MHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data. Switching Time Test Circuit 5. VCE = 2. (2) fT = |hfe| • ftest.7 1.0 Vdc) (IC = 25 Adc. (1) Pulse Test: Pulse Width  300 µs.0 Adc) (IC = 25 Adc.8 Vdc ON CHARACTERISTICS (1) DC Current Gain) (IC = 0. f = 0. TIME (ns) 10 µs + 11 V 300 td @ VBE(off) = 6.0 7. IB1 = IB2 = 1.0 Vdc) VBE(on) – Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (2) (IC = 1.0% t. IC = 10 Adc. VEB(off) = 1.0 OHMS RB 10 OHMS SCOPE 0 1N4933 . IC = 0) IEBO – 100 µAdc 50 30 12 – 120 – – – 1. tf  10 ns DUTY CYCLE = 1. VCE = 2.0 Adc. RB and RC were varied to obtain desired test conditions.0 3. IC = 10Adc.0 Adc) ts – 1. VCE = 10 Vdc.5 0.25 µs Output Capacitance (VCB = 10 Vdc.0%. 1000 700 VCC + 80 V 500 RC 8.0 Adc) tf – 0.0 1. IB = 1. TC = 150C) ICEX Collector Cutoff Current (VCB = Rated VCB.9.8 2.com 119 20 30 . IB = 0) (VCE = 75 Vdc. VCE = 2.5 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 10 Adc.5 Vdc) (VCE = Rated VCEO. VEB(off) = 1.5 1.0 V VCC = 80 V IC/IB = 10 TJ = 25°C 200 100 70 50 tr 30 . IB = 0) 2N6338 2N6341 µAdc ICEO Collector Cutoff Current (VCE = Rated VCEO.0 Vdc) (IC = 10 Adc.3 µs Storage Time (VCC ≈ 80 Vdc. Figure 2. IB = 1.0 V tr. Duty Cycle  2.0 V 20 10 0.0 10 0. Turn–On Time http://onsemi.8 – – 1.5 Adc.0 Adc) (IC = 25 Adc.0 2. COLLECTOR CURRENT (AMP) Figure 3.0 Adc. IE = 0. IB = 2. IB1 = 1. VCE = 2.

0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.com 120 50 100 . Active Region Safe Operating Area 5.1 0.03 0.7 0.02 t1 0.1 0.. TIME (ms) 10 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 0.5 1.0 ms dc 5. i. REVERSE VOLTAGE (VOLTS) Figure 7. the transistor must not be subjected to greater dissipation than the curves indicate.r(t).0 0. TC is variable depending on conditions.0 2.5 5.0 2.07 0.0 10 20 VR.0 5.05 θJC = r(t) θJC θJC = 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6338 2N6341 1. At high case temperatures.0 2.1 30 TJ = 25°C Cib 2000 C.2 0.01 0.01 2.0 0.05 0.01 0.0 5.2 0.875°C/W MAX 0.5 D = 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.02 0.3 0.3 0. CAPACITANCE (pF) 3.02 SINGLE PULSE 0. COLLECTOR CURRENT (AMP) 20 1000 700 500 300 200 100 70 50 0. TIME (s) µ 1.5 0.7 1.0 7.1 0.0 5000 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25°C Figure 6.01 0.3 0.TC = P(pk) θJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC.0 1. D = t1/t2 0.0 3.2 tf 0. 3. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C.0 2.1 P(pk) 0.0 2.0 ms TJ = 200°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0. COLLECTOR CURRENT (AMP) 100 50 200 µs 20 10 1.0 3000 0.5 0.0 t.1 0. TJ(pk) may be calculated from the data in Figure 4.e.05 t2 DUTY CYCLE.7 0. Turn–Off Time Cob 0.0 ts t.07 0.2 0.0 3. The data of Figure 5 is based on TJ(pk) = 200C.5 1.0 10 IC. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 0.05 0.02 0. Capacitance http://onsemi.0 5.2 0.0 10 20 30 2N6338 2N6341 50 70 100 200 VCE.03 0.2 0. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation.05 0.0 5.

9 121 Publication Order Number: 2N6387/D .5 C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 2001 – Rev. . Temperature Range 5.0 0.92 C/W Thermal Resistance. Junction to Case Characteristics RθJC 1. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS 65 WATTS • High DC Current Gain — • • • • hFE = 2500 (Typ) @ IC = 4. 2N6388 Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol 2N6387 2N6388 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB Collector Current — Continuous Peak Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD Operating and Storage Junction. Junction to Ambient RθJA 62.52 Watts W/C 2.0 Vdc (Max) @ IC = 5. .016 Watts W/C –65 to +150 C THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance. 2001 March.0 Adc — 2N6387.0 Adc Collector–Emitter Sustaining Voltage – @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6387 = 80 Vdc (Min) — 2N6388 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2. LLC. Tstg CASE 221A–09 TO–220AB Vdc 10 15 Adc 250 mAdc 65 0. designed for general–purpose amplifier and low–speed switching applications.0 IC 10 15 TJ.ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device .  Semiconductor Components Industries.

PD.0 TC 80 3. Power Derating http://onsemi.0 20 0 TA 0 20 40 60 80 100 T.0 40 1.0 60 TC 2.com 122 120 140 160 . POWER DISSIPATION (WATTS) 2N6387 2N6388 TA 4. TEMPERATURE (°C) Figure 1.

0 Vdc.0 Adc. IB = 0) (VCE = 80 Vdc.5 Vdc.com 123 . VEB(off) = 1.0 3. TC = 125C) (VCE = 80 Vdc.0 Vdc. ftest = 1. VCE = 3. IB = 0. VCE = 3.0 MHz) |hfe| 20 — Output Capacitance (VCB = 10 Vdc.000 — — — 2. 2N6388 2N6387.8 4. http://onsemi.0 Vdc) 2N6387.1 Adc) 2N6387.0 1000 100 20.5 Vdc) (VCE = 60 Vdc. 2N6388 Base–Emitter On Voltage (IC = 5. VCE = 5.0 Adc. TC = 125C) 2N6387 2N6388 2N6387 2N6388 Vdc ICEO mAdc µAdc ICEX Emitter Cutoff Current (VBE = 5.0 Vdc) (IC = 10 Adc. IB = 0) VCEO(sus) 2N6387 2N6388 Collector Cutoff Current (VCE = 60 Vdc.5 Vdc) (VCE – 80 Vdc.0 — — 2. 2N6388 2N6387. 2N6388 hFE Collector–Emitter Saturation Voltage (IC = 5. VCE = 3.0 Vdc. VEB(off) = 1.0 MHz) Cob — 200 pF Small–Signal Current Gain (IC = 1.0 Adc. IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 5.5 Vdc. VCE = 3.0%. 2N6388 2N6387. f = 1.0 — — — — 300 300 3. IB = 0.0 Adc.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc.0 1.0 — 5. f = 1.01 Adc) (IC = 10 Adc.0 3. VCE = 5.0 kHz) hfe 1000 — — *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width  300 µs. VEB(off) = 1. VEB(off) = 1.0 Vdc) 2N6387.0 Adc. IE = 0. IB = 0) 2N6387 2N6388 Collector Cutoff Current (VCE = 60 Vdc. Duty Cycle  2.2N6387 2N6388 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1. 2N6388 — VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 1.0 Vdc) (IC = 1 0 Adc.

01 0.0 k  120 tr.01 0. Thermal Response http://onsemi.02 0.03 0.3 0. Switching Times D = 0.0 APPROX + 12 V 0 51 V2 APPROX  8.0 0.0 Figure 3.0 0.7 0.0 1. tf  10 ns DUTY CYCLE = 1. D = t1/t2 100 200 500 1.0 t. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.4.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C r(t).3 0.0 5.0 5. e.05 0.02 SINGLE PULSE 0.07 0.2N6387 2N6388 D1 MUST BE FAST RECOVERY TYPES. TIME (s) µ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 7..2 .05 0.01 5.0 2. COLLECTOR CURRENT (AMPS) 0.5 2.5 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .7 0.0% ts tf 1. Switching Times Test Circuit 1.5 0. 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA RC SCOPE TUT RB V1 3.1 0.02 0.g.2 Figure 2.07 0.1 0.1 0.2 0.0 VCC + 30 V 0.5 td 0. D1 IS DISCONNECTED AND V2 = 0 25 µs -8V D1 t.com 124 20 50 t1 t2 DUTY CYCLE. TIME (ms) 10 Figure 4.0 k 10 .2 0.2 0.1 P(pk) ZθJC (t) = r(t) RθJC RθJC = 1.0 IC.TC = P(pk) ZθJC(t) 0.0 V FOR td AND tr.05 0.

1 CURVES APPLY BELOW RATED VCEO 0. TJ(pk) may be calculated from the data in Figure 4. The data of Figure 5 is based on TJ(pk) = 150C.7 1. Active-Region Safe Operating Area 300 5000 3000 2000 200 TJ = 25°C C.8 1. COLLECTOR CURRENT (AMPS) 10 µs 5. COLLECTOR CURRENT (AMP) 100 Figure 7.0 IC. FREQUENCY (kHz) 200 30 0.5 0.3 Figure 8. CAPACITANCE (pF) hFE.0 0.1 500 1000 0.0 TJ = 25°C 2. DC CURRENT GAIN VCE .3 0.000 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C.0 50 ms 1.0 5.0 Vdc IC = 3. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown IC.0 2. Small–Signal Current Gain 20. the transistor must not be subjected to greater dissipation than the curves indicate. COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 Figure 5.2 0.0 2.0 7.0 6. Collector Saturation Region http://onsemi.0 5 ms TJ = 150°C 0.03 1.0 2.0 Adc 100 50 30 20 10 Cob 100 Cib 70 50 1.0 5. TC is variable depending on conditions. SMALL-SIGNAL CURRENT GAIN 10.0 50 µs 1 ms dc 2.2 1.0 3.0 4. BASE CURRENT (mA) 10 Figure 9.0 7.0 10 3.e. DC Current Gain 0.0 10 20 50 100 f.0 A 2.2N6387 2N6388 20 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE = 4.5 0.7 1.com 125 20 30 .0 A 6.0 V 10. REVERSE VOLTAGE (VOLTS) hFE.2 0.0 2.0 3.000 50 5.0 IB.0 2N6387 2N6388 2. Capacitance Figure 6.000 1000 500 300 200 TC = 25°C VCE = 4.0 10 20 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 100°C SECOND BREAKDOWN LIMITED 0.0 5.6 IC = 2.1 0.5 VR.0 A 4..2 1. i. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. At high case temperatures.4 1.0 40 60 10 20 VCE.

0 .2 0.0 2.5 0.4 -0.2 +0.0 θV.1 5.4 +0. Collector Cut–Off Region Figure 13.5 1.3.5 *IC/IB ≤ hFE@VCE  4.0 + 1.0 10 0. Darlington Schematic http://onsemi.0 3.1.0 V 0.0 3.0 1.4.0 .2 0 +0.0 k  120 100°C 25°C 10-1 -0.0 0.2 + 1. “On” Voltages Figure 11.0 +1.2N6387 2N6388 3. VOLTAGE (VOLTS) TJ = 25°C + 4.8 +1.0 2.2 0.0 2.0 + 3.0 1. COLLECTOR CURRENT (AMP) Figure 10.com 126 . COLLECTOR CURRENT (A) µ 105 104 103 102 REVERSE FORWARD COLLECTOR VCE = 30 V BASE TJ = 150°C 101 100  8.0 10 IC. BASE-EMITTER VOLTAGE (VOLTS) Figure 12.0 0.0 7.5 0.5.6 +0.4 EMITTER VBE. Temperature Coefficients IC.7 *θVC for VCE(sat) -55°C to 25°C .5 0.0 VCE(sat) @ IC/IB = 250 0. TEMPERATURE COEFFICIENTS (mV/°C) + 5.3 0 θVB for VBE 25°C to 150°C -55°C to 25°C .6 -0.0 7.1 VBE(sat) @ IC/IB = 250 .2.0V 3 25°C to 150°C + 2.3 0.0 V.0 5.0 VBE @ VCE = 4. COLLECTOR CURRENT (AMP) IC.7 1.0 2.

2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5. Tstg –65 to +150 C Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance.0 Adc = 5.0 (Min) @ IC = 15 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) – 2N6487. 2001 March.014 Watts W/C TJ.6 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 1. 9 127 Publication Order Number: 2N6487/D .0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 75 0. . . Preferred devices are ON Semiconductor recommended choices for future use and best overall value.8 0. Junction to Ambient RθJA 70 C/W (1) Indicates JEDEC Registered Data. LLC.ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . 2N6491 High Current Gain — Bandwidth Product fT = 5. 2001 – Rev.0 MHz (Min) @ IC = 1.  Semiconductor Components Industries.67 C/W Thermal Resistance. 2N6490 = 80 Vdc (Min) – 2N6488.0 Adc TO–220AB Compact Package *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–80 VOLTS 75 WATTS MAXIMUM RATINGS (1) Symbol 2N6487 2N6490 2N6488 2N6491 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 70 90 Vdc Emitter–Base Voltage VEB Rating Collector–Emitter Voltage 5. Junction to Case RθJC 1. designed for use in general–purpose amplifier and switching applications.0 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 5.

0 20 0 0 TA 0 20 40 60 80 100 120 TC. POWER DISSIPATION (WATTS) 2N6487 2N6488 2N6490 2N6491 TA 4. Power Derating http://onsemi.0 40 1.0 TC 80 3.0 60 TC 2.com 128 140 160 .PD. CASE TEMPERATURE (°C) Figure 1.

VCE = 4.0 Adc. 2N6490 2N6488.com 129 . IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 5. VCE = 4. VCE = 4.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 5.0 Adc. VCE = 4. TC = 150C) (VCE = 80 Vdc.0 Adc. (2) fT = |hfe| • ftest. TC = 150C) 2N6487.5 Vdc) (VCE = 60 Vdc. f = 1. VEB(off) = 1.0 kHz) hfe 25 — — *Indicates JEDEC Registered Data.3 3.0%. 2N6491 Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc.5 Vdc. 2N6490 2N6488.0 Adc. 2N6491 Collector Cutoff Current (VCE = 30 Vdc.0 Vdc.0 — — — — 500 500 5. IB = 0) (VCE = 40 Vdc.0 Vdc) (IC = 15 Adc.0 MHz) fT 5. 2N6491 Vdc ICEO mAdc µAdc ICEX Emitter Cutoff Current (VBE = 5. VCE = 4. IB = 5.3 3.0 5. IB = 0.0 Vdc) VBE(on) — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 1.0 Vdc) (IC = 15 Adc.0 20 5.0 Vdc.5 Vdc) Vdc VCEX 2N6487. 2N6490 2N6488. IB = 0) 2N6487. Duty Cycle  2.5 Adc) (IC = 15 Adc.5 Vdc) (VCE = 85 Vdc. ftest = 1. VEB(off) = 1.5 Vdc. 2N6491 2N6487.5 — — 1. VEB(off) = 1. IB = 0) VCEO(sus) 2N6487.0 150 — — — 1. VBE = 1.0 1. 2N6491 Collector Cutoff Current (VCE = 65 Vdc.0 Vdc.0 — MHz Small–Signal Current Gain (IC = 1. 2N6490 2N6488.0 Adc) VCE(sat) Base–Emitter On Voltage (IC = 5.0 Adc. http://onsemi. VEB(off) = 1. VCE = 4.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc. (1) Pulse Test: Pulse Width  300 µs.0 — 1. 2N6490 2N6488.2N6487 2N6488 2N6490 2N6491 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — 70 90 — — — — 1.

COLLECTOR CURRENT (AMP) 20 10 100 µs 5.0 ms dc 40 60 4.0 10 20 50 t1 t2 DUTY CYCLE.: 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA 10 td @ VBE(off)  5. REVERSE ALL POLARITIES. 2N6490 2N6488. Thermal Response IC.01 0. Active–Region Safe Operating Area http://onsemi.5 2.com 130 . TIME (ms) Figure 4. 2N6491 0.01 0.0 1.07 0.2 0.TC = P(pk) ZθJC(t) 0.0 ms TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 0.1 0. D = t1/t2 100 200 500 1. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 2.e.2 0.0 5. Turn–On Time D = 0.0 1.1 0.0 10 20 80 VCE.0 0.0 V NPN PNP 50 -4V 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.05 0.0 2.7 0.05 P(pk) ZθJC (t) = r(t) RθJC RθJC = 1. Switching Time Test Circuit 1. The data of Figure 5 is based on TJ(pk) = 150C.g.0 5.02 0..1 0.3 0.0 IC.5 0. At high case temperatures.5 CURVES APPLY BELOW RATED VCEO 2N6487. TC = 25°C VCC = 30 V IC/IB = 10 20 D1 MUST BE FAST RECOVERY TYPE.10 V 51 tr.5 10 20 Figure 3.02 SINGLE PULSE 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.0 k t. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. i.03 0.2 0.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . TIME (ns) RB 0 D1 tr 200 100 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.5 1. tf  10 ns DUTY CYCLE = 1. COLLECTOR CURRENT (AMP) r(t).0 500 µs 2.0% t. the transistor must not be subjected to greater dissipation than the curves indicate.0 5. FOR PNP.2N6487 2N6488 2N6490 2N6491 VCC + 30 V 25 µs 1000 500 RC + 10 V SCOPE .1 There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown.01 0.0 1. e.02 0. TC is variable depending on conditions.05 0. TJ(pk) may be calculated from the data in Figure 4.2 0.2 0.

2N6487 2N6488 2N6490 2N6491 1000 5000 700 C.0 5. COLLECTOR CURRENT (AMP) Cob 300 Cib 200 Cob 100 NPN PNP TJ = 25°C 70 10 50 20 0. Turn–Off Time 1. TIME (ns) 1000 500 tf NPN PNP 200 100 50 0. REVERSE VOLTAGE (VOLTS) Figure 7.0 2.5 Figure 6.0 2. Capacitances http://onsemi.com 131 50 .5 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 1.0 5. CAPACITANCE (pF) ts t.2 0.0 IC.0 10 20 VR.

5 1. Collector Saturation Region 2. VOLTAGE (VOLTS) 2.8 V. VOLTAGE (VOLTS) V.0 5.0 A 1.8 0 0.4 0.0 A 0.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.2N6487 2N6488 2N6490 2N6491 NPN 2N6487.0 V 10 5.6 1.4 TJ = 25°C 2.0 1.4 VCE(sat) @ IC/IB = 10 0.0 IC.0 2. DC CURRENT GAIN 200 10 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.0 TJ = 25°C 1.0 2.0 0.0 V 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .4 1.0 A 0. “On” Voltages http://onsemi.0 IC.2 2.8 2.0 IC = 1.0 IC.0 TJ = 25°C 1.0 A 0.2 1.2 0 5.5 1. DC CURRENT GAIN hFE. 2N6488 PNP 2N6490.8 4.0 5. 2N6491 500 500 TJ = 150°C 100 -55°C 50 20 VCE = 2.4 1.6 0.0 10 20 50 100 200 500 1000 IB. BASE CURRENT (mA) 2000 5000 Figure 9.6 1.5 1.2 VBE(sat) = IC/IB = 10 0.0 1. COLLECTOR CURRENT (AMP) Figure 10.4 TJ = 25°C 2.8 1.8 0.com 132 10 20 . COLLECTOR CURRENT (AMP) 10 20 2.2 0.0 20 10 50 100 200 500 1000 IB.0 A 8.2 0 5.6 1.0 A 0.8 VBE @ VCE = 2.0 20 VCE = 2. COLLECTOR CURRENT (AMP) 0.6 8.5 TJ = 150°C 200 25°C hFE.0 V 0.0 10 0 20 VCE(sat) @ IC/IB = 10 0.4 0.0 0. BASE CURRENT (mA) 2000 5000 VCE .2 25°C 100 -55°C 50 20 10 5.0 4.0 2.4 2.8 1.0 1. DC Current Gain 2. COLLECTOR CURRENT (AMP) 0.2 IC = 1.0 5.6 1.2 IC.0 V 0.

64 Watts W/C TJ. 2001 – Rev.0 Vdc (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol Value Unit VCEO 250 Vdc Collector–Base Voltage VCB 350 Vdc Emitter–Base Voltage Collector–Emitter Voltage VEB 6.Tstg –65 to +150 C Characteristic Symbol Max Unit Thermal Resistance. 5 AMPERE POWER TRANSISTORS NPN SILICON 250 VOLT 80 WATTS • High Collector–Emitter Sustaining Voltage – • • VCEO(sus) = 250 Vdc (Min) Excellent DC Current Gain hFE = 10–75 @ IC = 2. 10 133 Publication Order Number: 2N6497/D .ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 .5 Adc Low Collector–Emitter Saturation Voltage @ IC = 2.0 10 Adc Base Current IB 2.5 Adc – VCE(sat) = 1. . . 2001 May. designed for high voltage inverters.  Semiconductor Components Industries. Junction to Case RθJC 1. LLC. Especially well suited for switching power supply applications.56 C/W Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS (1) Indicates JEDEC Registered Data. switching regulators and line–operated amplifier applications.0 Vdc Collector Current – Continuous – Peak IC 5.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 80 0.

5 Adc) tr – 0.0%.01 0.1 Figure 11.0 5. f = 1.0 V tr. VBE = 5. f = 100 kHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data.0 – – – – 1.0 V 0. Turn–On Time http://onsemi.5 Adc. VBE(off) = 1.2N6497 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 250 – – – – – – 1.0 . COLLECTOR CURRENT (AMP) Figure 12.0 – – MHz Cob – – 150 pF Rise Time (VCC = 125 Vdc. IC = 2.0 Vdc. IC = 2.5 Adc. IB1 = IB2 = 0. IC = 2.0 Vdc.7 0.0 10 – – 1. IE = 0.0 Adc. IB = 500 mAdc) (IC = 5.5 Adc. TC = 100C) ICEX Emitter Cutoff Current (VBE = 6.0 µs Storage Time (VCC = 125 Vdc.0 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 2.02 D1 MUST BE FAST RECOVERY TYPE.05 0.0 Adc.5 Adc) tf – 0. VCC + 125 V 25 µs 1.5 0.0% t.45 1.5 fT 5.07 0.0 IC. Switching Time Test Circuit td @ VBE(off) = 5. Duty Cycle  2. IB = 500 mAdc) (IC = 5.3 SCOPE . VBE(off) = 1.: 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA tr 0.5 Vdc. (1) Pulse Test: Pulse Width  300 µs.com 134 5.g.5 Adc) ts – 1. VCE = 10 Vdc. tf  10 ns DUTY CYCLE = 1.9. IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 350 Vdc. e.4 1. VCE = 10 Vdc) (IC = 5.0 V 0.5.0 0.0 Adc) VBE(sat) – Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 250 mAdc. IB = 2.0 – – 75 – – – – – 1.0 µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 25 mAdc.0 2.5 Adc.05 0.5 RC  50 + 11 V 0.5 2.4 2.07 0. IB = 2.2 0.0 MHz) Output Capacitance (VCB = 10 Vdc.0 TJ = 25°C 0.5 µs Fall Time (VCC = 125 Vdc.2 0.5 Adc.7 1.0 10 3. VCE = 10 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 2.03 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC = 125 V IC/IB = 5.3 0. IB1 = 0.0 3. TIME (s) µ RB  20 0 D1 .5 Vdc) (VCE = 175 Vdc. IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 2. IB1 = IB2 = 0.5 Adc.0 Adc.1 0.

01 0.05 0.0 5.1 0.0 TJ = 25°C POWER DERATING FACTOR (%) 10 7.0 ms 100 µs 1.1 0.0 2.05 0. The data of Figure 14 is based on TC = 25C.3 0. Turn–Off Time 20 40 60 80 100 120 TC.0 3.0 SECOND BREAKDOWN DERATING 80 0 Figure 15. At high case temperatures.e. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.01 P(pk) 0.2 0. TJ(pk) is variable depending on power level.07 0.03 SINGLE PULSE 0.1 0.2 0.r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6497 1.02 CURVES APPLY BELOW RATED VCEO 5.0 7. i.0 0.5 0.0 1.2 0.2 0.com 135 140 160 .TC = P(pk) RθJC(t) DUTY CYCLE. D = t1/t2 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 TC = 25°C 0.56°C/W 0.0 50 70 100 200 300 10 20 30 VCE.0 5.7 0.02 0. Power Derating http://onsemi.3 tf 0.07 0.1 0. Active–Region Safe Operating Area 100 ts t.01 0.3 0.02 0.2 0.0 dc 2. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.05 SINGLE PULSE t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . Allowable current at the voltage shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 16.2 0.0 60 THERMAL DERATING 40 20 0 5.7 1. TIME (s) µ 3. COLLECTOR CURRENT (AMP) 3.7 0. Thermal Response 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.0 2.3 0. CASE TEMPERATURE (°C) Figure 16. IC.. COLLECTOR CURRENT (AMP) 10 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 14.0 ms 1.0 VCC = 125 V IC/IB = 5.5 BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.0 0.05 0. the transistor must not be subjected to greater dissipation than the curves indicate.5 0. Second breakdown limitations do not derate the same as thermal limitations. TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 13.5 0.0 5.0 10 t.5 D = 0.5 1.1 RθJC(max) = 1.02 t1 0.0 IC.03 0.1 0.0 2.05 0. TJ(pk) may be calculated from the data in Figure 13.

0 25°C to 150°C θVB for VBE -55 to 25°C -3.0 VBE(sat) @ IC/IB = 5.1 0.0 10 20 40 60 100 VR.5 0.8 VBE @ VCE = 10 V 0.4 1. COLLECTOR CURRENT (A) µ 2.3 0.0 2.2 2.0 4.0 -2.7 IC/IB = 2.0 A 0 0.2 0.2 0.3 0. COLLECTOR CURRENT (AMP) 102 10-1 5.0 IC. DC CURRENT GAIN 70 TJ = 150°C 50 VCE = 10 V 25°C 30 20 -55°C 10 7.6 1.0 5.05 3.6 0.0 VCE .0 5.5 0.2 +0. VOLTAGE (VOLTS) TJ = 25°C 1.05 0.07 0.01 0.5 1.4 0.2 20 FORWARD 0 +0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 3.0 A Cib 300 200 TJ = 25°C 100 70 50 Cob 30 25°C REVERSE -0.5 IB.0 0.0 Figure 20.2 1. Collector Saturation Region 1.6 10 0.05 0.07 0.0 A Figure 18.1 0.0 *APPLIES FOR IC/IB  hFE@VCE  10V 3 +2.0 0.0 6.0 3.0 2.0 1000 700 500 VCE = 200 V 101 100°C C.0 +1.07 0. COLLECTOR CURRENT (AMP) 4.4 0.0 0 0.0 Figure 17. “On” Voltages TJ = 150°C 100 10-2 -0.0 10 +4.2N6497 hFE.3 0.05 0.4 +0.1 0. BASE CURRENT (mA) IC.0 0. Collector Cutoff Region 2.8 IC = 1. DC Current Gain θV.4 1. Capacitance http://onsemi.6 0.1 0.com 136 200 400 .5 0.0 2. COLLECTOR CURRENT (AMP) 104 103 0.0 A IC.0 +3. CAPACITANCE (pF) IC. REVERSE VOLTAGE (VOLTS) Figure 22.0 TJ = 25°C 3. Temperature Coefficients 5.02 5.2 2. TEMPERATURE COEFFICIENTS (mV/°C) V.0 3.0 Figure 19.1 0.0 0.0 *θVC for VCE(sat) 25°C to 150°C 0 -55°C to 25°C -1.0 VBE.7 1.7 1.2 VCE(sat) @ IC/IB = 5.0 5.2 0. BASE-EMITTER VOLTAGE (VOLTS) Figure 21.

2001 March.016 Watts W/C TJ.ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . designed for general–purpose amplifier and low speed switching applications.52 watts W/C Total Device Dissipation @ TA = 25C Derate above 25C PD 2 0. 3 137 Publication Order Number: 2N6667/D .  Semiconductor Components Industries. LLC. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain — • • • • • hFE = 3500 (Typ) @ IC = 4 Adc Collector–Emitter Sustaining Voltage — @ 200 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6667 = 80 Vdc (Min) — 2N6668 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package Complementary to 2N6387. . 2001 – Rev. 2N6388 COLLECTOR CASE 221A–09 TO–220AB BASE 8k  120 EMITTER Figure 1. Tstg –65 to +150 C Collector Current — Continuous — Peak Operating and Storage Junction Temperature Range (1) Indicates JEDEC Registered Data. . Darlington Schematic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5 Vdc IC 10 15 Adc Base Current IB 250 mAdc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.

5 Vdc. f = 1 kHz) hfe 1000 — — Emitter Cutoff Current (VBE = 5 Vdc. IE = 0. IB = 0. VEB(off) = 1.5 C/W *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc.92 C/W Thermal Resistance.0% RC V2 RB APPROX +8V 51 0 V1 APPROX . Junction to Case RθJC 1.01 Adc) (IC = 10 Adc. IC = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 5 Adc.1 Adc) VCE(sat) — — 2 3 Vdc Base–Emitter Saturation Voltage(IC = 5 Adc.30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1.2N6667 2N6668 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. VEB(off) = 1.5 Vdc. VCE = 3 Vdc) DYNAMIC CHARACTERISTICS *Indicates JEDEC Registered Data (2) Pulse Test: Pulse Width  300 µs. IB = 0.. IB = 0) 2N6667 2N6668 ICEO — — 1 1 mAdc Collector Cutoff Current (VCE = 60 Vdc. TC = 125C) 2N6667 2N6668 2N6667 2N6668 ICEX — — — — 300 300 3 3 µAdc IEBO — 5 mAdc hFE 1000 100 20000 — — Collector–Emitter Saturation Voltage (IC = 5 Adc. IB = 0.0 V 25 µs Figure 2.1 Adc) VBE(sat) — — 2. VCE = 5 Vdc. tf  10 ns DUTY CYCLE = 1.01 Adc) (IC = 10 Adc. Switching Times Test Circuit http://onsemi. IB = 0. VCE = 5 Vdc. TC = 125C) (VCE = 80 Vdc.8 4. 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA FOR td AND tr.5 Vdc) (VCE = 80 Vdc. ftest = 1 MHz) |hfe| 20 — — Output Capacitance (VCB = 10 Vdc. VEB(off) = 1. f = 1 MHz) Cob — 200 pF Small–Signal Current Gain (IC = 1 Adc.12 V TUT D1 + 4.com 138 8k  120 SCOPE . VEB(off) = 1. MUST BE FAST RECOVERY TYPES e. VCE = 3 Vdc) (IC = 10 Adc. Junction to Ambient RθJA 62.g. IB = 0) (VCE = 80 Vdc. D1 IS DISCONNECTED AND V2 = 0 tr. Duty Cycle  2%. VCC .5 Vdc Current Gain — Bandwidth Product (IC = 1 Adc.5 Vdc) (VCE = 60 Vdc. IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 — — Vdc Collector Cutoff Current (VCE = 60 Vdc.

03 0.01 0.01 P(pk) 0.05 0.5 0.5 0.05 0.05 0.com 139 . COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6.1 0. COLLECTOR CURRENT (AMPS) Figure 4.1 0. TC is variable depending on conditions. Thermal Response 20 IC. D = t1/t2 0. TIME (ms) 10 20 50 100 200 500 1000 Figure 5.02 t1 SINGLE PULSE 0.03 0.3 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C.1 0. i. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 0. Typical Switching Times Figure 3.1 0. the transistor must not be subjected to greater dissipation than the curves indicate.2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .01 0.3 0 20 40 60 80 100 T.2 0.2 0.2 0.92°C/W MAX 0.5 0. TIME (s) µ TC TA tr 2 ts 1 0.. TEMPERATURE (°C) 140 120 160 . The data of Figure 6 is based on TJ(pk) = 150C.1 0.05 0. Maximum Safe Operating Area http://onsemi.02 0.02 TJ = 150°C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25°C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 5 2 3 7 10 20 30 50 VCE. At high case temperatures. dc 1 ms 1 0.7 1 2 3 5 7 10 IC.td tf 0.2 0. TJ(pk) may be calculated from the data in Figure 5.5 0. COLLECTOR CURRENT (AMPS) 100 µs 5 ms 10 5 3 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.2 0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.TC = P(pk) RθJC(t) t2 DUTY CYCLE.5 1 2 5 t. Power Derating r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0. POWER DISSIPATION (WATTS) 2N6667 2N6668 TA 4 TC 80 3 60 10 7 5 3 2 40 1 20 t.3 0.PD.7 0.1 ZθJC(t) = r(t) RθJC RθJC = 1.02 0.e.

5 0. VOLTAGE (VOLTS) Cob Cib 50 20 10 200 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.5 0. Typical Collector Saturation Region 3 2. FREQUENCY (kHz) 1 2 5 0. REVERSE VOLTAGE (VOLTS) Figure 7. COLLECTOR CURRENT (AMP) Figure 11.8 1.5 0.5 0.1 0.7 1 2 3 5 7 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) 10.1 200 300 500 1000 20. Typical DC Current Gain V.4 1 0. DC CURRENT GAIN 100 30 0.7 1 2 3 5 7 IB.7 1 2 IC.com 140 10 .5 0.000 TJ = .7 1 2 3 IC.5 10 20 VR. SMALL-SIGNAL CURENT GAIN 10.2 IC = 2 A θV.000 hFE. CAPACITANCE (pF) hFE .1 VCE .5 0.2 2.2 0.000 1000 500 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 200 100 50 1 2 3 5 7 10 20 30 50 70 100 70 f. BASE CURRENT (mA) 10 20 30 +5 TJ = 25°C 2 1. COLLECTOR CURRENT (AMPS) 5 7 10 TJ = 25°C 2. Typical Temperature Coefficients http://onsemi.2N6667 2N6668 300 5000 TJ = 25°C 2000 C.6 0.3 25°C to 150°C -55°C to 25°C 0. Typical Small–Signal Current Gain Figure 8.3 0.2 0. TEMPERATURE COEFFICIENTS (mV/°C) 1 0.3 0.5 100 50 Figure 10.6 Figure 9.2 3 0. Typical “On” Voltages Figure 12.55°C 0.3 0. COLLECTOR CURRENT (AMPS) 5 7 10 +4 *IC/IB ≤ +3 hFE@VCE  3.1 4A 6A 1. Typical Capacitance 7000 5000 3000 2000 VCE = 3 V TJ = 150°C TJ = 25°C 1000 700 500 300 200 0.0V 3 25°C to 150°C +2 +1 -55°C to 25°C 0 -1 ∗θVC for VCE(sat) -2 -3 θVB for VBE -4 -5 0.

Typical Collector Cut–Off Region http://onsemi.4 +0.2 0 -0.8 -1 VBE.4 -0.2 -0.2N6667 2N6668 105 IC.6 25°C +0. BASE-EMITTER VOLTAGE (VOLTS) -1. COLLECTOR CURRENT (A) µ 104 103 REVERSE FORWARD VCE = 30 V 102 101 TJ = 150°C 100°C 100 10-1 +0.6 -0.4 Figure 13.2 -1.com 141 .

139 are complementary with BD 136. .ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor .15 Adc BD 135. 2001 – Rev. 80 VOLTS 10 WATTS • DC Current Gain — • hFE = 40 (Min) @ IC = 0. 140 CASE 77–09 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Type Value Unit Collector–Emitter Voltage VCEO BD 135 BD 137 BD 139 45 60 80 Vdc Collector–Base Voltage VCBO BD 135 BD 137 BD 139 45 60 100 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current IC 1. 2001 March. 138. 137.5 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45. designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1. 9 142 Publication Order Number: BD135/D .5 100 Watt mW/C TJ.5 Adc Base Current IB 0. . Tstg –55 to +150 C Operating and Storage Junction Temperature Range  Semiconductor Components Industries. LLC. 60.25 10 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 12.

com 143 80 . Duty Cycle  2. VCE = 2. COLLECTOR CURRENT (AMP) 10. IE = 0) (VCB = 30 Vdc. IE = 0. VCE = 2 V) (IC = 0.0 5 ms 2.0 Vdc) VBE(on)* — 1 Vdc *Pulse Test: Pulse Width  300 µs.5 A VCE = 2 V) hFE* Type Min Max BD 135 BD 137 BD 139 45 60 80 — — — — — 0.01 1 50 2 5 10 20 VCE. IB = 0. Junction to Ambient θJA 100 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector–Emitter Sustaining Voltage* (IC = 0.0 5.1 ms 0.5 Vdc Base–Emitter On Voltage* (IC = 0. Active–Region Safe Operating Area http://onsemi.005 A.15 A.BD135 BD137 BD139 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance.1 0.05 Adc) VCE(sat)* — 0.0 1.05 BD135 BD137 BD139 0.5 Adc.1 10 — 10 25 40 25 — 250 — UnIt Vdc µAdc µAdc — Collector–Emitter Saturation Voltage* (IC = 0. IB = 0) BVCEO* Collector Cutoff Current (VCB = 30 Vdc. IC. Junction to Case θJC 10 C/W Thermal Resistance. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1.0%.03 Adc.5 0.5 ms dc 0.5 Adc. TC = 125C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc.0 TJ = 125°C 0. VCE = 2 V) (IC = 0.02 0. IC = 0) IEBO DC Current Gain (IC = 0.

.5 Adc Total Device Dissipation@ TA = 25C Derate above 25C PD 1. 137. LLC.15 Adc • BD 136.5 100 Watt mW/C TJ.5 AMPERE POWER TRANSISTORS PNP SILICON 45. 2001 – Rev. 1. . 9 144 Publication Order Number: BD136/D . 80 VOLTS 10 WATTS • DC Current Gain — hFE = 40 (Min) @ IC = 0. 140 are complementary with BD 135. 2001 March.ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . 139 CASE 77–09 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Type Value Unit Collector–Emitter Voltage VCEO BD 136 BD 138 BD 140 45 60 80 Vdc Collector–Base Voltage VCBO BD 136 BD 138 BD 140 45 60 100 Vdc Emitter–Base Voltage VEBO 5 Vdc IC 1. Tstg –55 to +150 C Operating and Storage Junction Temperature Range  Semiconductor Components Industries. designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 60.5 Adc Collector Current Base Current IB 0. 138.25 10 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 12.

IE = 0) (VCB = 30 Vdc. Junction to Ambient θJA 100 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Type Min Max BD 136 BD 138 BD 140 45 60 80 — — — — — 0. IC.0%.1 0. COLLECTOR CURRENT (AMP) 10 5. VCE = 2 V) ALL BD140–10 (IC = 0.0 Vdc) VBE(on)* — 1 Vdc *Pulse Test: Pulse Width  300 µs. IC = 0) DC Current Gain (IC = 0. Junction to Case θJC 10 C/W Thermal Resistance.05 Adc) VCE(sat)* — 0. IB = 0.0 Vdc. IB = 0) BVCEO Collector Cutoff Current (VCB = 30 Vdc.1 ms 0. VCE = 2 V) Collector–Emitter Saturation Voltage* (IC = 0.0 5 ms 2.1 10 IEBO — 10 hFE* 25 40 — 250 63 25 160 — Collector–Emitter Sustaining Voltage* (IC = 0.2 0.com 145 80 .5 Adc.5 ms dc 0.03 Adc.005 A. VCE = 2. TC = 125 C) ICBO Emitter Cutoff Current (VBE = 5.BD136 BD138 BD140 BD140–10 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. IE = 0.0 1.01 1 2 5 10 20 50 VCE.02 0.5 A.0 TJ = 125°C 0.5 Adc. Duty Cycle  2. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1.5 0.05 BD136 BD138 BD140 0. Active–Region Safe Operating Area http://onsemi.15 A.5 Vdc Base–Emitter On Voltage* (IC = 0. VCE = 2 V) Unit Vdc µAdc µAdc — ALL (IC = 0.

IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc. phonograph and other consumer product applications. 2 146 Publication Order Number: BD159/D .5 1.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS • Suitable for Transformerless. . 0. designed for power output stages for television. IC = 0) IEBO — 100 µAdc hFE 30 240 — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 1. 2001 March.16 Watts W/C TJ. .0 Vdc Collector Current — Continuous Peak IC 0.0 mAdc. LLC. 2001 – Rev. radio.ON Semiconductor Plastic Medium Power NPN Silicon Transistor BD159 .0 Adc Base Current IB 0. Tstg –65 to +150 C Symbol Max Unit θJC 6. Junction to Case CASE 77–09 TO–225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 350 — Vdc Collector Cutoff Current (At rated voltage) ICBO — 100 µAdc Emitter Cutoff Current (VEB = 5. Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Max Unit VCEO 350 Vdc Collector–Base Voltage VCB 375 Vdc Emitter–Base Voltage VEB 5.0 Vdc.25 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance.25 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 20 0. VCE = 10 Vdc)  Semiconductor Components Industries.

0 0 20 40 60 80 100 120 140 0 160 10 20 TC.3 dc 0. To insure operation below.7 0.0 2. VOLTAGE (VOLTS) 20 15 10 0. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.01 30 50 100 200 300 IC.0 ms 0. DC Safe Operating Area 300 VCE = 10 V VCE = 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 4. COLLECTOR CURRENT (mA) 10 20 30 50 100 200 VCE.8 VBE @ IC/IB = 10 0. Power–Temperature Derating Curve IC. 10 µs 1.02 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.0 7.0 V hFE.com 147 70 100 200 300 500 . COLLECTOR CURRENT (mAdc) Figure 5.1 0. COLLECTOR CURRENT (AMPS) TJ = +25°C 1. Current Gain http://onsemi. DC CURRENT GAIN 200 TJ = 150°C 100 + 100°C 70 50 + 25°C 30 20 10 .0 10 20 30 50 IC. the maximum TJ.55°C 1.2 IC/IB = 5.0 5. “On” Voltages The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown.0 V.03 0.07 0.6 VBE @ VCE = 10 V 0.0 3.0 5. POWER DISSIPATION (WATTS) 25 1. CASE TEMPERATURE (°C) Figure 2.2 500 Figure 3.5 500 µs TJ = 150°C 0. power–temperature derating must be observed for both steady state and pulse power conditions.4 VCE(sat) @ IC/IB = 10 0.BD159 PD.0 0.

IB = 0) DC Current Gain (IC = 0.0 A. Junction to Case CASE 77–09 TO–225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 — Vdc Collector Cutoff Current (VCB = 80 Vdc.  Semiconductor Components Industries. VCE = 10 Vdc. designed for use in 5. VCE = 2. 2001 March. .0 Vdc IC 3.0%.0 Adc. 3.0 Vdc.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.15 A. Duty Cycle  2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 30 240 Watts mw/C TJ.0 — MHz Current–Gain – Bandwidth Product (IC = 250 mAdc. 2001 – Rev.16 C/W Collector Current Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance.0 V) hFE BD179–10 ALL Collector–Emitter Saturation Voltage* (IC = 1.ON Semiconductor BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor . f = 1.0 MHz) *Pulse Test: Pulse Width  300 As.0 Adc.0 Adc Base Current IB 1.1 Adc) VCE(sat) — 0. LLC. 9 148 Publication Order Number: BD179/D . IB = 0. VCE = 2.1 mAdc Emitter Cutoff Current (VBE = 5. .1 Adc. Tstg –65 to +150 C Symbol Max Unit θJC 4. VCE = 2.3 Vdc fT 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS • DC Current Gain — hFE = 40 (Min) @ IC = 0.8 Vdc Base–Emitter On Voltage* (IC = 1. IC = 0) IEBO — 1.0 V) (IC = 1.0 mAdc 63 15 160 — Collector–Emitter Sustaining Voltage* (IC = 0.0 Vdc) VBE(on) — 1. IE = 0) ICBO — 0.15 Adc • BD179 is complementary with BD180 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.

0 3.0 3.0 0.5 A 1.0 ms 5.com 149 10 .0 VCE(sat) @ IC/IB = 10 IC. BASE CURRENT (mA) 20 30 50 100 200 Figure 2.8 IC = 0.3 0.0 10 IB.0 5.0 V 0.0 1.0 5.0 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1.0 V 300 200 100 70 50 TJ = + 150°C 30 20 TJ = + 55°C 10 2.25 A 0.2 VOLTAGE (VOLTS) hFE.0 7.0 2.2 0.2 0.0 AMP) PULSE DUTY CYCLE < 10% 0.5 VCE = 2. DC CURRENT GAIN (NORMALIZED) 1000 700 500 TJ = 25°C 0.1 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown. COLLECTOR CURRENT (mA) 20 30 50 100 200 300 500 1000 2000 IC.0 ms 1.0 3.5 1. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.3 0 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 A 0.6 TJ = 25°C 0.0 0.6 VBE @ VCE = 2. To insure operation below the maximum TJ.0 3.3 0.1 A 0.0 2.5 dc TJ = 150°C SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.7 0.0 TJ = + 25°C 10 1.BD179 BD179–10 10 100 µs IC. Active Region Safe Operating Area 1.0 5. power–temperature derating must be observed for both steady state and pulse power conditions. 1.0 3.0 5.0 10 20 30 50 70 100 VCE. Collector Saturation Region 1. Current Gain Figure 4. “On” Voltages 20 30 50 100 200 300 500 1000 2000 http://onsemi.4 0. COLLECTOR CURRENT (mA) Figure 3.9 VBE(sat) @ IC/IB = 10 0. COLLECTOR CURRENT (AMP) 7.0 2.2 0 0.

03 0.3 0. Thermal Response http://onsemi.5 0.r(t). TIME or PULSE WIDTH (ms) Figure 5.05 0.1 SINGLE PULSE θJC(t) = r(t) θJC θJC = 4.0 2.05 D = 0.7 0.0 10 t.0 3.TC = P(pk) θJC(t) 0.05 D = 0.02 0.16°C/W MAX θJC = 3.07 0.1 0.2 0.01 P(pk) 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .1 0.2 D = 0.0 5.03 0.02 0.0 0.com 150 20 30 50 t1 t2 DUTY CYCLE.01 0. D = t1/t2 100 200 300 500 1000 .5 D = 0.5 1.2 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD179 BD179–10 1.3 0.5°C/W TYP D = 0.

Junction to Case CASE 77–09 TO–225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Collector–Emitter Sustaining Voltage* (IC = 0. IE = 0) (VCB = 80 Vdc.15 A. VCE = 10 Vdc. VCE = 2. designed for use in 5.0%. • DC Current Gain — hFE = 40 (Min) @ IC = 0.0 Adc.1 Adc.0 Vdc) VBE(on) — 1.0 Adc Base Current IB 1. IE = 0) Symbol Min Max Unit V(BR)CEO 80 — Vdc — — — 1.ON Semiconductor BD180 Plastic Medium Power Silicon PNP Transistor 3. Duty Cycle  2.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.0 V) hFE mAdc mAdc — Collector–Emitter Saturation Voltage* (IC = 1. IB = 0) Collector Cutoff Current (VCB = 45 Vdc.15 Adc • BD180 is complementary with BD179 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 — 1.3 Vdc fT 3.0 V) (IC = 1.0 MHz) *Pulse Test: Pulse Width  300 µs. Tstg –65 to +150 C Symbol Max Unit θJC 4.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . .16 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. IB = 0. VCE = 2.0 Vdc. f = 1.0 Adc. 2001 March.0 Vdc Collector Current IC 3. IC = 0) IEBO DC Current Gain (IC = 0.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 30 240 Watts mW/C TJ. VCE = 2. .8 Vdc Base–Emitter On Voltage* (IC = 1.0 — MHz Current–Gain — Bandwidth Product (IC = 250 mAdc.  Semiconductor Components Industries. LLC.1 Adc) VCE(sat) — 0.0 40 15 250 — ICBO BD180 Emitter Cutoff Current (VBE = 5. 2001 – Rev.0 A. 9 151 Publication Order Number: BD180/D .

0 5. “On” Voltages http://onsemi. To insure operation below the maximum TJ.0 ms 3.0 10 20 30 50 100 0 2. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.7 0.1 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown.25 A 0.2 0 0. BASE CURRENT (mA) Figure 2.0 0.0 SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASEEMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 20 AMP) PULSE DUTY CYCLE < 10% BD180 5.5 A 1.3 0. Current Gain Figure 4.5 VCE = 2.0 dc 1.0 5. Active Region Safe Operating Area VCE . DC CURRENT GAIN (NORMALIZED) 1000 700 500 TJ = .0 20 10 100 50 200 IB.0 IC.0 V 1.com 152 .2 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1.5 TJ = 150°C 0.0 5.BD180 10 7.9 0.0 TJ = 25°C 0. COLLECTOR CURRENT (mA) IC.8 IC = 0.0 5.0 70 100 VCE.6 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 200 300 500 1000 2000 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC.0 ms 2.0 2. COLLECTOR CURRENT (mA) Figure 3. power–temperature derating must be observed for both steady state and pulse power conditions.5 0.2 300 200 TJ = + 150°C 100 70 50 TJ = + 25°C VOLTAGE (VOLTS) hFE .2 0.0 3.0 TJ = 25°C 3.0 A 0.3 20 10 2.0 V 0.0 3.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2. Collector Saturation Region 1.55°C 30 0.0 7. 100 µs 1.1 A 0.4 0.0 10 20 30 50 2.0 5. COLLECTOR CURRENT (AMP) 1.

D = t1/t2 100 200 300 500 1000 .2 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD180 1.02 0.0 0.2 D = 0.TC = P(pk) θJC(t) 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .1 0.1 0.01 0. TIME or PULSE WIDTH (ms) Figure 5.0 3.05 D = 0.02 0.7 0.5 1.05 0. Thermal Response http://onsemi.03 0.5 D = 0.3 D = 0.03 0.2 0.r(t).0 5.05 SINGLE PULSE D = 0.3 0.01 θJC(t) = r(t) θJC θJC = 4.5°C/W TYP 0.1 0.16°C/W MAX θJC = 3.5 0.0 2.07 0.0 10 t.com 153 20 30 50 t1 t2 DUTY CYCLE.

VCE = 2.0 V) (IC = 1.0 Vdc. VCE = 10 Vdc. 10 154 Publication Order Number: BD237/D . LLC. 2001 April.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ hFE = 40 (Min) @ IC = 0. Duty Cycle  2. Tstg –55 to +150 C Symbol Max Unit θJC 5.15 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0%.0 Vdc Collector Current IC 2.0 Adc.  Semiconductor Components Industries.6 Vdc Base–Emitter On Voltage* (IC = 1.0 V) Current–Gain — Bandwidth Product (IC = 250 mAdc. .0 A.ON Semiconductor NPN BD237 Plastic Medium Power Silicon NPN Transistor PNP BD238 *ON Semiconductor Preferred Device .3 Vdc fT 3. IB = 0) DC Current Gain (IC = 0.0 — MHz Collector–Emitter Sustaining Voltage* (IC = 0.0 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. VCE = 2. f = 1.0 mAdc hFE1 hFE2 40 25 — — Collector–Emitter Saturation Voltage* (IC = 1. VCE = 2.0 Adc. 2.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. IE = 0) ICBO — 0.0 Vdc) VBE(on) — 1. Junction to Case CASE 77–09 TO–225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 — Vdc Collector Cutoff Current (VCB = 100 Vdc. 2001 – Rev.15 A.0 Adc Base Current IB 1. designed for use in 5.1 Adc. .1 mAdc Emitter Cutoff Current (VBE = 5.0 Adc Total Device Dissipation @ TC = 25C PD 25 Watts TJ. IC = 0) IEBO — 1.1 Adc) VCE(sat) — 0.0 MHz) *Pulse Test: Pulse Width  300 µs. IB = 0.

To insure operation below the maximum TJ.5 A 1.0 3.3 20 30 50 100 200 300 500 1000 2000 IC.0 0.0 Figure 3. BASE CURRENT (mA) 20 30 50 100 200 Figure 2.0 5.BD238 IC. Active Region Safe Operating Area VCE . power–temperature derating must be observed for both steady state and pulse power conditions.0 V 0.25 A 0.6 TJ = 25°C 0.0 V 1.3 0. 100 µs 1 ms 3 5 ms TJ = 150°C 1 dc 0.4 0. DC CURRENT GAIN (NORMALIZED) 1000 700 500 1.0 5.5 VCE = 2.2 0.2 0 0. COLLECTOR CURRENT (mA) 0 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 A 0. Collector Saturation Region hFE .1 BD236 BD237 3 10 30 VCE.com 155 .9 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 100 Figure 1.1 A 0.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 5. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.5 1. “On” Voltages http://onsemi.3 0.0 10 IB. COLLECTOR CURRENT (mA) Figure 4. COLLECTOR CURRENT (AMP) 10 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown.0 TJ = + 150°C TJ = + 25°C TJ = + 55°C 10 TJ = 25°C 0.2 VOLTAGE (VOLTS) 300 200 100 70 50 30 20 10 2. Current Gain VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC.0 3.8 IC = 0.0 3.0 2.

07 0.5 1.05 0.1 0.2 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD238 1.2 D = 0.3 0.5 0.0 2.r(t).01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .1 0.16°C/W MAX θJC = 3.5 D = 0.05 SINGLE PULSE D = 0.02 0.com 156 20 30 50 t1 t2 DUTY CYCLE.3 D = 0.01 0.7 0. TIME or PULSE WIDTH (ms) Figure 5.0 5.03 0. D = t1/t2 100 200 300 500 1000 .03 0.TC = P(pk) θJC(t) 0. Thermal Response http://onsemi.5°C/W TYP 0.01 θJC(t) = r(t) θJC θJC = 4.0 0.0 3.1 0.0 10 t.05 D = 0.2 0.02 0.

Junction to Case RθJC 3. designed for use in general purpose amplifier and switching applications.  Semiconductor Components Industries. 2001 May. 2001 – Rev. .0 Adc Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 40 0. LLC.0 MHz (Min) @ IC = 500 mAdc Compact TO–220 AB Package 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80.5 C/W Thermal Resistance. Junction to Ambient RθJA 62. BD242C High Current Gain — Bandwidth Product fT = 3. 100 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BD241C BD242C Unit Collector–Emitter Voltage VCEO 100 Vdc Collector–Emitter Voltage VCES 115 Vdc Emitter–Base Voltage VEB 5.0 5.32 Watts W/C TJ.ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* .2 Vdc (Max) @ IC = 3.125 C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min.0 Vdc Collector Current — Continuous Peak IC 3. Tstg –65 to +150 C Rating Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. . • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device VCE = 1.) BD241C. 3 157 Publication Order Number: BD241C/D .

com 158 140 160 . CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.BD241C BD242C PD. POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC.

Switching Time Equivalent Circuit td @ VBE(off) = 2.0 V tr @ VCC = 30 V IC/IB = 10 TJ = 25°C Figure 2. BD242C VCEO Vdc 100 ICEO 0. BD242C Collector Cutoff Current (VCE = 60 Vdc. IB = 600 Adc) VCE(sat) Base–Emitter On Voltage (IC = 3.0 Vdc) hFE 25 10 Collector–Emitter Saturation Voltage (IC = 3.0 VCC Vin RL 1.7 0.3 0. VCE = 10 Vdc.0 Vdc) VBE(on) Vdc 1.02 0.07 0.1 0. APPROX + 11 V TURNON PULSE 2.BD241C BD242C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min.0 ON CHARACTERISTICS1 DC Current Gain (IC = 1.0 Adc. TIME (s) µ 1 Current Gain – Bandwidth Product2 (IC = 500 mAdc. ftest = 1 MHz) . COLLECTOR CURRENT (AMP) Figure 3.0 Vdc.5 SCOPE RK t. BD242C Collector Cutoff Current (VCE = 100 Vdc.05 0.0 20 Pulse Test: Pulse Width  300 µs.9. Turn–On Time http://onsemi.3 tr @ VCC = 10 V 0.0 Vdc) (IC = 3. VEB = 0) BD241C. IB = 0) BD241C.7 1.0 V 0.03 0.03 DUTY CYCLE  2.3 mAdc µAdc ICES Emitter Cutoff Current (VBE = 5. Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage1 (IC = 30 mAdc.0 Adc.2 Vdc 1.8 DYNAMIC CHARACTERISTICS 2 fT Small–Signal Current Gain (IC = 0. VCE = 4. fT = |hfe| • ftest.05 0.5 0. Duty Cycle  2.1 0.0 V t1  7.0%.07 0. IC = 0) 200 IEBO mAdc 1. VCE = 10 Vdc.0% APPROX . f = 1 kHz) hfe MHz 3. IB = 0) BD241C.0 Adc. VCE = 4.0 IC.5 Adc.0 Adc.0 CjdCeb Vin 0 VEB(off) t1 APPROX + 11 V Vin t2 TURNOFF PULSE t3 0.0 ns 100  t2  500 µs t3  15 ns 0.com 159 3. Max.4. VCE = 4.0 .

1 5.0 1.07 0.0 0.07 0.02 0.05 0.2 ts′ tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts′ = ts .0 t..0 3.3 0.03 100 0.0 0. The data of Figure 5 is based on TJ(pk) = 150C.0 k VCE .5 0. 100 µs 2.1 0.1 2. Capacitance http://onsemi.0 BD241C.2 0. Thermal Response 10 5. Active Region Safe Operating Area 1.2 0.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 0.7 1.1 Ceb 70 50 0.02 0.0 5.5 1.1 0.0 3.2 0.0 SECOND BREAKDOWN LIMITED @ TJ  150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED 0. COLLECTOR CURRENT (AMP) 30 0.0 2. BD242C 10 20 50 IC. the transistor must not be subjected to greater dissipation than the curves indicate. TRANSIENT THERMAL RESISTANCE (NORMALIZED) BD241C BD242C 1.2 0. TIME (s) µ 3.01 0.2 0.5 0.05 0.1 0.0 10 VR.0 5. i. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.07 0.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.01 0.3 0.0 2.05 0.02 SINGLE PULSE 0.0 ms 5. At high case temperatures.0 IC.0 1.05 0.3 0.r(t).7 0.01 0. D = t1/t2 100 200 500 1.1/8 tf TJ = 25°C TJ = + 25°C 200 CAPACITANCE (pF) t.03 0.0 2.05 P(pk) ZθJC (t) = r(t) RθJC RθJC = 3. Turn–Off Time Ccb 0. TIME (ms) 10 20 50 t1 t2 DUTY CYCLE.TC = P(pk) ZθJC(t) 0.2 CURVES APPLY BELOW RATED VCEO 0.0 Figure 6. REVERSE VOLTAGE (VOLTS) Figure 7. TJ(pk) may be calculated from the data in Figure 4.03 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.1 0.7 0. COLLECTOR CURRENT (AMP) 100 Figure 5.5 D = 0. TC is variable depending on conditions.3 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.5 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4.5 0.e.com 160 20 30 40 .0 tf @ VCC = 10 V 0.

1 0. COLLECTOR CURRENT (A) µ +1.com 161 .1 0 +0. TEMPERATURE COEFFICIENTS (mV/°C) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2. JUNCTION TEMPERATURE (°C) Figure 12. Effects of Base–Emitter Resistance http://onsemi. COLLECTOR CURRENT (AMP) 102 10-2 10 20 50 100 200 IB.0 107 105 IC ≈ ICES IC = 2 x ICES 104 103 102 VCE = 30 V IC = 10 x ICES 106 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE.0 V 0.2 +0.02 0.4 0 3.5 0.0 θV.3 0.8 Figure 8.0 3.6 1.5 +0.5 -1. DC Current Gain 1.0 TJ = .0 A 0.0 *θVC FOR VCE(sat) +0.0 Figure 9.05 0. “On” Voltages VCE = 30 V 10-3 -0.5 +0.0 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TJ = 25°C 1.3 0.07 0. BASE CURRENT (mA) IC.5 1.0 0.01 0.0 A 2.5 0.2 VCE(sat) @ IC/IB = 10 0 0.0 IC.005 0.0 +2. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V.3 0.6 RBE .3 -0.005 0.4 0.5 θVB FOR VBE -2. Temperature Coefficients 101 TJ = 150°C 100 100°C REVERSE FORWARD 25°C ICES -0. COLLECTOR CURRENT (AMPS) 103 10-1 5.1 0.01 0.2 0.2 0.8 3.5 0 -0.0 0.3 A 0.0 -2.003 0.4 0.03 0.65°C TO + 150°C +2.2 1.2 IC = 0.020.0 Figure 10.4 +0.0 V TJ = 150°C 25°C -55°C 30 10 7.2 500 IC. DC CURRENT GAIN 300 100 70 50 VCE = 2.003 0. Collector Cut–Off Region Figure 13. COLLECTOR CURRENT (AMP) 2.5 +1.03 0.1 +0.BD241C BD242C hFE. Collector Saturation Region 1.7 1.0 3.05 0.4 -0. BASE-EMITTER VOLTAGE (VOLTS) TJ.5 1.0 1.6 2.0 IC.0 -1. VOLTAGE (VOLTS) TJ = 25°C 1.0 Figure 11.1 0.3 1000 *APPLIES FOR IC/IB ≤ 5.05 0.0 5.0 VCE .

0 Adc • Collector Emitter Sustaining Voltage — • • VCEO(sus) = 80 Vdc (Min) — BD243B.0 Vdc Collector Current — Continuous Peak IC 6 10 Adc Base Current IB 2. BD244B = 100 Vdc (Min) — BD243C. Junction to Case Symbol Max Unit RθJC 1. Power Derating  Semiconductor Components Industries. .5 Vdc (Max) @ IC = 6. 9 162 Publication Order Number: BD243B/D .0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range Watts TJ.92 C/W PD. designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE(sat) = 1. 2001 – Rev. BD244C High Current Gain Bandwidth Product fT = 3. 2001 March. CASE TEMPERATURE (°C) 140 160 Figure 1. LLC.ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . Tstg 65 0. POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC.52 W/C –65 to +150 C CASE 221A–06 TO–220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance. .0 MHz (Min) @ IC = 500 mAdc Compact TO–220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB 5.

BD244C Emitter Cutoff Current (VBE = 5. BD243B BD244B BD243C.1 1.0 MHz) fT 3.0 kHz) hfe 20 — — DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulsewidth  300 µs.0 Adc.5 Adc. f = 1. mAdc IB = 0) Min Max 80 100 — — — 0.0 — MHz Small–Signal Current Gain (IC = 0.30 V 25 µs tr.3 0.06 D1 MUST BE FAST RECOVERY TYPE eg.0 Adc. Duty Cycle  2.02 0.5 Vdc Base–Emitter On Voltage (IC = 6.0 IC. ftest = 1. IB = 1. IC = 0) IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0. BD243C.0 Vdc) VBE(on) — 2.0 Vdc) (IC = 3.0 Vdc. Turn–On Time http://onsemi.0 . VCE = 10 Vdc. COLLECTOR CURRENT (AMP) Figure 3. VEB = 0) (VCE = 100 Vdc.0 6.0 Vdc Current–Gain — Bandwidth Product (2) (IC = 500 mAdc. TIME (s) µ SCOPE RB 0 . VEB = 0) µAdc ICES BD243B. Switching Time Test Circuit td @ VBE(off) = 5. (2) fT = hfe • ftest 2.7 0. IB = 0) ICEO Unit Vdc mAdc BD243B.0%.05 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc.0 0.2 0.07 0. BD244B.4 0. BD244B BD243C.7 — — 400 400 — 1. tf  10 ns DUTY CYCLE = 1.5 RC + 11 V TJ = 25°C VCC = 30 V IC/IB = 10 1.0 VCC .0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 6.3 Adc. BD244C Collector Cutoff Current (VCE = 80 Vdc.9.6 2. VCE = 4. VCE = 10 Vdc.2 tr 0.03 0. BD244C Collector Cutoff Current (VCE = 60 Vdc. 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA Figure 2.com 163 4.0 V 0.0 Adc.0 30 15 — — VCEO(sus) BD243B.0% 51 D1 t. VCE = 4.0 V 0.0 Adc) VCE(sat) — 1.0 0. VCE = 4.1 0.

the transistor must not be subjected to greater dissipation than the curves indicate.0 0.0 3.5 1.TC = P(pk) RθJC(t) DUTY CYCLE. TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4.5 0.92°C/W 0.0 300 t. TIME (s) µ 2.02 t1 0.02 0.0 5. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.com 164 30 50 .0 BD243B.2 0.0 3.0 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C 1.0 5. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. At high case temperatures. BD244C 10 20 40 60 80 VCE.5 4. D = t1/t2 0.3 0.2 0.0 ms 2.0 Figure 6.0 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 Cib 100 70 Cob 50 30 0.2 0.03 0. TJ(pk) may be calculated from the data in Figure 4.0 6. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. BD244B BD243C.02 0.0 IC.r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BD243B BD243C BD244B BD244C 1.0 1.5 ms IC.1 0. COLLECTOR CURRENT (AMP) TJ = 25°C 200 CAPACITANCE (pF) 3. The data of Figure 5 is based on TJ(pk) = 150C: TC is variable depending on conditions.1 0.01 0.3 0.06 tf 0.1 5.5 CURVES APPLY BELOW RATED VCEO 0. i.01 0.5 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5.07 0.e. Active Region Safe Operating Area 5.7 0.4 0.2 0.05 RθJC(max) = 1.1 P(pk) 0..2 0.6 2.0 2.2 0.0 3.3 0.01 SINGLE PULSE t2 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . Capacitance http://onsemi. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C. COLLECTOR CURRENT (AMP) 5.05 0. Turn-Off Time 1. REVERSE VOLTAGE (VOLTS) Figure 7.07 0. 0.5 D = 0.0 TJ = 150°C 5.3 0.0 ts 1.0 10 t.0 0.7 0.1 0.05 0.0 0.05 0.0 10 20 VR.1 0.0 1.0 2.03 0.

5 0.0 2.0 V TJ = 150°C 100 70 50 30 20 25°C -55°C 10 7.1k 20 40 60 80 100 120 140 160 VBE.0M TJ = 150°C -0.0 -1. BASE CURRENT (mA) +2.1 +0.8 5. COLLECTOR CURRENT (AMPS) 101 10-1 1.4 30 Figure 9.1 0.0 0.1 0.2 0.0 -2.5 1.0 IC.0 0. Collector Saturation Region 2.5 θVB FOR VBE -2.5 Figure 10.06 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4. COLLECTOR CURRENT (AMP) 4.0 V VCE(sat) @ IC/IB = 10 IC.5 RBE .55°C to + 25°C -0.6 10M 1.6 1.2 0.0k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0. VOLTAGE (VOLTS) 1.0 + 25°C to + 150°C +0.0 A 1. TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 0 0.0 2. Temperature Coefficients VCE = 30 V 10-3 -0. BASEEMITTER VOLTAGE (VOLTS) TJ.0 0. Collector Cut-Off Region Figure 13.06 0.2 +1.com 165 .5 *θVC FOR VCE(sat) 0 . COLLECTOR CURRENT (A) µ 103 102 0.1 +1.6 IC = 1.5 A IC ≈ ICES 10k 1.6 2.0 5. DC Current Gain 1.0 VCE .3 -0.0 A 0.6 0.7 0.2 2.4 0 20 10 θV. JUNCTION TEMPERATURE (°C) Figure 12.2 +0.4 0.4 0.0 50 100 200 300 IB.3 0.0 IC.3 0. Effects of Base–Emitter Resistance http://onsemi.55°C to + 25°C 0. “On” Voltages REVERSE 1000 *APPLIES FOR IC/IB ≤ 5.0 Figure 11.0 +2.8 0.4 100°C IC = ICES FORWARD 0 VCE = 30 V +0.3 IC = 10 x ICES IC = 2 x ICES 100k 25°C +0.3 0. COLLECTOR CURRENT (AMP) 100 10-2 500 IC.4 +0.0 3. DC CURRENT GAIN 300 200 VCE = 2.0 6.0 3.0 6.0 2.0 4.5 + 25°C to + 150°C -1. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V.6 +0.2 0.BD243B BD243C BD244B BD244C hFE.06 0.5 +0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TJ = 25°C 1.1 .2 Figure 8.

5 C/W Emitter–Base Voltage Collector Current Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case  Semiconductor Components Industries. . 2001 May. for amplifier and switching applications.0 Adc Base Current IB 1. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 4.0 AMPERES POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage BD437 BD439 BD441 VCEO 45 60 80 Vdc Collector–Base Voltage BD437 BD439 BD441 VCBO 45 60 80 Vdc VEBO 5. .0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 36 288 Watts W/C TJ.ON Semiconductor BD437 BD439 BD441 Plastic Medium Power Silicon NPN Transistor . 10 166 Publication Order Number: BD437/D . LLC. Complementary types are BD438 and BD442.0 Vdc IC 4. 2001 – Rev. Tstg –55 to +150 C Symbol Max Unit θJC 3.

1 – – 1. BD439.0 – – – – – – – – 0.1 Vdc fT 3.0 V) DC Current Gain (IC = 2.1 0.0 MHz) http://onsemi.0 V) Collector Saturation Voltage (IC = 3. VCE = 1.com 167 Vdc .0 – – MHz V(BR)CEO V(BR)EBO Vdc ICBO BD437 BD439 BD441 IEBO Unit Vdc V(BR)CBO BD437 BD439 BD441 Emitter Cutoff Current (VEB = 5. VCE = 1.0 V) DC Current Gain (IC = 10 mA. BD441 Base–Emitter On Voltage (IC = 2.0 A.0 V. IB = 0) Symbol DC Current Gain (IC = 500 mA. VCE = 1. f = 1. IE = 0) (VCB = 60 V. IE = 0) (VCB = 80 V.8 VBE(on) – – 1.0 V) Typ BD437 BD439 BD441 Emitter–Base Breakdown Voltage (IE = 100 µA. IE = 0) Min Vdc mAdc mAdc hFE BD437 BD439 BD441 hFE BD437 BD439. VCE = 5. IB = 0) Collector–Base Breakdown Voltage (IC = 100 µA. IC = 250 mA.0 A.0 A.BD437 BD439 BD441 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Collector–Emitter Breakdown Voltage (IC = 100 mA. BD441 hFE BD437 BD439 BD441 VCE(sat) BD437. IC = 0) Collector Cutoff Current (VCB = 45 V.3 A) Max 45 60 80 – – – – – – 45 60 80 – – – – 5.1 0. IB = 0.0 30 20 15 – – – – – – 85 40 – – 375 475 40 25 15 – – – – – – – – 0.0 V) Current–Gain – Bandwidth Product (VCE = 1.

05 0.0 Figure 3.3 0.2 0. CURRENT GAIN (NORMALIZED) 200 180 160 140 120 BD433.0 10 20 VCE.com 168 100 .2 TJ = 150°C 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1. 437 BD439. COLLECTOR CURRENT (AMP) SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT 0. “On” Voltage 5.07 0.0 3. Current Gain 10 TJ = 25°C IC.0 dc CURVES APPLY BELOW RATED VCEO BD437 BD439 BD441 1.05 0.1 0.0 1.0 IB.0 10 2.0 A 3.0 50 2.4 0 0.1 0.0 A 1.5 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4.01 0.0 VOLTAGE (VOLTS) 1.0 V 0.05 0.6 5 ms 4.2 0.3 0.0 4.03 0.5 IC.0 0. Collector Saturation Region hFE.005 0.6 VCE(sat) @ IC/IB = 10 0 1. COLLECTOR CURRENT (AMP) 1 2 Figure 2.1 2. BASE CURRENT (mA) 30 20 50 70 100 200 3 5 300 500 Figure 1.3 0. 435.01 0. Active Region Safe Operating Area http://onsemi.5 0.02 0.2 0. COLLECTOR CURRENT (AMP) 2.8 TJ = 25°C 0.5 VBE @ VCE = 2.8 VBE(sat) @ IC/IB = 10 0.0 3.7 1.2 0.1 0.0 0.BD437 BD439 BD441 VCE .0 7.0 5.6 IC = 10 A 100 mA 1. 441 100 80 60 40 20 0 0.02 0.03 0.

Junction to Case  Semiconductor Components Industries.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 36 288 Watts W/C TJ. Tstg –55 to +150 C Symbol Max Unit θJC 3. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 4.ON Semiconductor BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . 2001 – Rev. .9 169 Publication Order Number: BD438/D . 2001 March. LLC.0 Vdc IC 4. Complementary types are BD437 and BD441.0 AMPERES POWER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage BD438 BD440 BD442 VCEO 45 60 80 Vdc Collector–Base Voltage BD438 BD440 BD442 VCBO 45 60 80 Vdc VEBO 5. .5 C/W Emitter–Base Voltage Collector Current Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance. for amplifier and switching applications.

IE = 0) (VCB = 80 V.0 A. IB = 0) Collector–Base Breakdown Voltage (IC = 100 µA.0 — — MHz V(BR)CEO V(BR)EBO Vdc ICBO BD438 BD440 BD442 IEBO Unit Vdc V(BR)CBO BD438 BD440 BD442 Emitter Cutoff Current (VEB = 5. VCE = 1.0 A.5 Vdc fT 3.8 VBE(ON) — — — — 1.8 0. IC = 0) Collector Cutoff Current (VCB = 45 V.1 0.0 V) Collector Saturation Voltage (IC = 3. VCE = 1.1 — — 1.3 A) Base–Emitter On Voltage (IC = 2.0 30 20 15 — — — — — — 85 40 40 — — — 375 475 475 40 25 15 — — — — — — — — — — — — 0.0 — — — — — — — — 0.0 V) DC Current Gain (IC = 2.1 1. IC = 250 mA. VCE = 5.1 0. IE = 0) Min Vdc mAdc mAdc hFE BD438 BD440 BD442 hFE BD438 BD440 BD442 hFE BD438 BD440 BD442 VCE(sat) BD438 BD440 BD442 BD438 BD440/442 Current–Gain — Bandwidth Product (VCE = 1.0 V) Max 45 60 80 — — — — — — 45 60 80 — — — — — — 5.0 V) DC Current Gain (IC = 10 mA.0 A.0 V.0 MHz) http://onsemi. f = 1.0 V) Typ BD438 BD440 BD442 Emitter–Base Breakdown Voltage (IE = 100 µA.7 0. IE = 0) (VCB = 60 V. VCE = 1. IB = 0) Symbol DC Current Gain (IC = 500 mA.BD438 BD440 BD442 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Collector–Emitter Breakdown Voltage (IC = 100 mA. IB = 0.com 170 Vdc .

6 5 ms 4.3 0.01 0. COLLECTOR CURRENT (AMP) VCE.0 3.05 0. “On” Voltage Figure 4.2 0.0 4.5 0. COLLECTOR CURRENT (AMP) Figure 2.6 IC = 10 mA 100 mA 1.0 0. Current Gain 10 TJ = 25°C IC.0 2.02 0.0 2.0 5.005 0. Active Region Safe Operating Area http://onsemi. Collector Saturation Region 200 100 80 60 40 20 0 10 2 3 100 1 5 IC.1 0.0 A 1.0 V 0. BASE CURRENT (mA) 30 20 50 70 200 100 300 500 hFE.0 10 20 50 IC.0 1. CURRENT GAIN (NORMALIZED) Figure 1.8 TJ = 25°C 0.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.5 VBE @ VCE = 2.05 0.4 0 0.1 2.0 0.5 1.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3.0 3.0 CURVES APPLY BELOW RATED VCEO BD438 BD440 BD442 1.4 VCE(sat) @ IC/IB = 10 0 0.07 0.0 A 3.0 5.2 TJ = 150°C dc SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT 1.0 10 IB.com 171 100 .0 7.8 VBE(sat) @ IC/IB = 10 0.03 0.7 1.0 VOLTAGE (VOLTS) 1.0 1.1 0.BD438 BD440 BD442 VCE . COLLECTOR CURRENT (AMP) 2.2 0.

• High DC Current Gain — • • hFE = 750 (Min) @ IC = 1.  Semiconductor Components Industries. 803 *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ • 4.ON Semiconductor BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . 680. POWER DISSIPATION (WATTS) 50 45 40 35 30 25 20 15 10 5.9 172 Publication Order Number: BD675/D . . Power Temperature Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. .1 Adc Total Device Dissipation @TC = 25C Derate above 25C PD 40 0. Tstg –55 to +150 C Rating Collector–Emitter Voltage CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 3. 677A. LLC. 679. 802.0 Vdc Collector Current IC 4. 676A. 678A. 678. 2001 March. 682 BD 677.13 C/W Thermal Resistance.0 Adc Base Current IB 0.0 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60. 80. 801.5 and 2. CASE TEMPERATURE (°C) Figure 1. 677A. 100 VOLTS 40 WATTS MAXIMUM RATINGS Symbo l BD675 BD675 A BD677 BD677 A BD679 BD679 A BD68 1 Unit VCEO 45 60 80 100 Vdc Collector–Base Voltage VCB 45 60 80 100 Vdc Emitter–Base Voltage VEB 5. Junction to Case PD. 679A are equivalent to MJE 800. 2001 – Rev.0 Adc Monolithic Construction BD675. 679A. for use as output devices in complementary general–purpose amplifier applications. 679. 677. 680A. 675A. 681 are complementary with BD676.0 0 15 30 45 60 75 90 105 120 135 150 165 TC.32 Watts W/C Operating and Storage Junction Temperating Range TJ.

0 Vdc. 679. COLLECTOR CURRENT (AMP) 5. IE = 0) (VCB = Rated BVCEO.0 0. VCE = 3 0 Vdc) BD677.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown.5 BONDING WIRE LIMIT THERMALLY LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 0.0 Emitter Cutoff Current (VBE = 5. VCE = 3.0 750 750 — — — — 2.5 2.0 10 50 20 VCE. 679A BD681 2.0 Adc.0 Adc.0 MHz) hfe — (1) Pulse Test: Pulse Width  300 µs. 677A BD679.0 Vdc) (IC = 2.5 Adc. 675A BD677.2 0. 677. 2. 677A. IB = 0) ICEO — 500 µAdc Collector Cutoff Current (VCB = Rated BVCEO. 679A Collector–Emitter Saturation Voltage(1) (IC = 1. f = 1. IC = 0) IEBO — 2.0 5.BD675 BD675A BD677 BD677A BD679 BD679A BD681 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 — — — — Vdc Collector Cutoff Current (VCE = Half Rated VCEO. the transistor must not be subjected to greater dissipation than the curves indicate.com 173 . 679. IB = 30 mAdc) (IC = 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. VCE = 3. IB = 40 mAdc) BD677.5 2. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.1 0.5 1. e.5 Adc.8 — — 2.0 Vdc) (IC = 2. 679A BD681 mAdc mAdc ON CHARACTERISTICS DC Currert Gain(1) (IC = 1.0 Vdc) BD675. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.VCE = 3. 679A Base–Emitter On Voltage(1) (IC = 1.2 2. Duty Cycle  2. 679. TC = 100’C) ICBO — — 0. 679A hFE VCE(sat) — VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 1. IE = 0.0%. VCE = 3.05 1. At high case temperatures.5 Adc. IC. 675A BD677.5 Adc.g.0 Vdc. IB = 0) BD675. DC Safe Operating Area http://onsemi. 681 BD675A. 681 BD675A..0 Adc.0 TC = 25°C BD675. 677A.0 1. 677A. 677A BD679. 681 BD675A.0 — OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 50 mAdc.

679A BD681 BASE  8.0 k  120 EMITTER Figure 3. 675A BD677.com 174 . Darlington Circuit Schematic http://onsemi. 677A BD679.BD675 BD675A BD677 BD677A BD679 BD679A BD681 COLLECTOR NPN BD675.

0 Adc Monolithic Construction BD676. BD676A.. BD680.0 Adc Base Current IB 0. 78.BD676. 80A or 82 THERMAL CHARACTERISTICS Characteristic Thermal Resistance – Junction to Case  Semiconductor Components Industries. 678A. 702. Tstg –55 to +150 °C Symbol Max Unit RθJC 3. 677A. BD678A. 80. 701. 2001 March.32 W W/°C TJ. 100 VOLTS 40 WATTS MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD676. BD678A BD680. BD678. 80. BD680A BD682 VCB Emitter-Base Voltage VEB 5. 678A. BD680A. 78A.1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0. 677. 680A are equivalent to MJE 700. 675A..13 °C/W Operating and Storage Junction Temperature Range Value Unit Vdc 45 60 80 100 Vdc TO–225AA CASE 77 STYLE 1 45 60 80 100 MARKING DIAGRAM YWW BD6xxx Y WW BD6xxx xxx = Year = Work Week = Specific Device Code = 76. • High DC Current Gain – • • • hFE = 750 (Min) @ IC = 1. 9 ORDERING INFORMATION Device Package Shipping BD676 TO–225AA 500 Units/Box BD676A TO–225AA 500 Units/Box BD678 TO–225AA 500 Units/Box BD678A TO–225AA 500 Units/Box BD680 TO–225AA 500 Units/Box BD680A TO–225AA 500 Units/Box BD682 TO–225AA 500 Units/Box Publication Order Number: BD676/D . 676A. 680. BD678A BD680.0 Vdc Collector Current IC 4. BD680A BD682 VCEO Collector-Base Voltage BD676. 682 are complementary with BD675. 2001 – Rev. BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.for use as output devices in complementary general–purpose amplifier applications.5 and 2. 678. LLC. 76A. 681 BD 678. 680. 679. 679A. BD676A BD678. 680A. 60. 703 4.0 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 45.com . BD676A BD678.

678A.0 – OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 1.8 – – 2.2 2. VCE = 3.5 Adc. VCE = 3. 680A BD682 mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1. IB = 30 mAdc) (IC = 2.5 Adc. 678A BD680.) (IC = 1. 678. BD678. VCE = 3. IB = 0) ICEO – 500 µAdc Collector Cutoff Current (VCB = Rated BVCEO. BD680. 678A.) (IC = 1.5 Adc. 680A VCE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 1. Duty Cycle  2. BD676A.0 Vdc) (IC = 2.5 Adc. IC = 0) IEBO – 2.) (IC = 50 mAdc. 680A Base–Emitter On Voltage (Note 1.0 750 750 – – – – 2. BD678A. 680. 682 BD676A.0 Adc. PD. VCE = 3.) (IC = 1.BD676. 676A BD678. BD680A. 680A hFE Collector–Emitter Saturation Voltage (Note 1. VCE = 3. 680. 682 BD676A. Power Temperature Derating http://onsemi.0 MHz) hfe 1.5 2. POWER DISSIPATION (WATTS) 50 45 40 35 30 25 20 15 10 5. 680.0 0 15 30 45 60 75 90 105 120 135 150 TC. TC = 100°C) ICBO – – 0.0%.0 Adc. f = 1.5 2.0 Emitter Cutoff Current (VBE = 5.0 Adc.0 Vdc.0 Vdc) (IC = 2. CASE TEMPERATURE (°C) Figure 1.com 176 165 – .0 Vdc) BD676. IE = 0) (VCB = Rated BVCEO.5 1.0 Vdc.0 Vdc) BD678. IB = 40 mAdc) BD678. IE = 0. 682 BD676A. BD682 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 – – – – Vdc Collector Cutoff Current (VCE = Half Rated VCEO. 678A. IB = 0) BD676. Pulse Test: Pulse Width  300 µs.

Darlington Circuit Schematic http://onsemi..2 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.0 1.BD676.5 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 0.0 TC = 25°C BD676.0 0. the transistor must not be subjected to greater dissipation than the curves indicate.1 0.05 1. 676A BD678. 678A BD680.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2.0 5. 680A BD682 20 2. 680A BD682 BASE  8. COLLECTOR CURRENT (AMP) 5. BD680A.0 10 50 VCE. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. 678A BD680. BD678A. BD676A.g. BD682 IC. DC Safe Operating Area COLLECTOR PNP BD676. BD678.0 k  120 EMITTER Figure 3.com 177 . e. BD680. At high case temperatures. 676A BD678.

Junction to Case 12 1.0. Power Derating  Semiconductor Components Industries.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25C PD 15 0.6 0 20 TA PD.0 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BD787 BD788 Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 6.5.34 C/W Rating Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance.0 8.0 Vdc Collector Current — Continuous — Peak IC 4. • Low Collector–Emitter Sustaining Voltage — • • 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS VCEO(sus) 60 Vdc (Min) — BD787.0 0. 2001 – Rev.4 TC PD.8 4.12 Watts W/C TJ. POWER DISSIPATION (WATTS) 1. BD788 High Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc Collector–Emitter Saturation Voltage Specified at 0.ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 .0 0. high–speed switching applications. . Tstg –65 to +150 C Symbol Max Unit RθJC 8.2 8. designed for lower power audio amplifier and low current.0 and 4. TEMPERATURE (°C) Figure 1. 2. 2001 March. 1. POWER DISSIPATION (WATTS) 16 40 60 80 100 120 140 0 160 T. .0 Adc Adc Base Current IB 1. 9 178 Publication Order Number: BD787/D . LLC.

8 2. IB = 50 mAdc) (IC = 1.0 Adc.0 Vdc) (IC = 1.com 179 pF — . VBE(off) = 1.0 Adc.0 Vdc Base–Emitter On Voltage (IC = 2.0%.1 MHz) Cob BD787 BD788 Small–Signal Current Gain (IC = 200 mAdc. IB = 200 mAdc) VBE(sat) — 2. f = 1. Pulse Width  300 µs.0 Adc.0 250 — — — — — — — 0. IB = 0) (VCE = 30 Vdc.0 Vdc. IC = 0) (f = 0. f = 10 MHz) Output Capacitance (VCB = 10 Vdc. VCE = 3.0 Adc.4 0. IB = 100 mAdc) (IC = 2.0 Vdc) (IC = 4. http://onsemi. IB = 200 mAdc) (IC = 4.1 µAdc mAdc Emitter Cutoff Current (VEB = 6. VBE(off) = 1.0 Vdc) VBE(on) — 1.0 Adc. VCE = 3.8 Vdc fT 50 — MHz — — 50 70 10 — DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc.6 0. VCE = 10 Vdc.0 µAdc 40 25 20 5. IB = 0) ON CHARACTERISTICS(1) DC Current Gain (IC = 200 mAdc.0 kHz) hfe *Indicates JEDEC Registered Data (1) Pulse Test.0 0.0 Adc.5 Vdc.5 Vdc) (VCE = 40 Vdc. VCE = 3.5 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc. VCE = 10 Vdc.0 Adc.0 Vdc) (IC = 2.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 500 mAdc. TC = 125°C) ICEX — — 1. VCE = 3. IB = 800 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 2.BD787 BD788 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 — Vdc Collector Cutoff Current (VCE = 20 Vdc. IB = 0) ICEO — 100 µAdc Collector Cutoff Current (VCE = 80 Vdc.0 Adc. Duty Cycle  2. VCE = 3. IC = 0) IEBO — 1.

com 180 . BD787 (NPN) BD788 (PNP) 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Thermal Response 10 IC.: 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA FOR PNP TEST CIRCUIT.02 0.0 2.9.1 t2 DUTY CYCLE.0 0.1 0.0 3.0 V 10 7.0 10 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . COLLECTOR CURRENT (AMP) 4. The data of Figure 5 is based on TJ(pk) = 150C: TC is variable depending on conditions.5 1. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. REVERSE ALL POLARITIES.0 V 51 tr.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.e.03 0. tf  10 ns DUTY CYCLE = 1. 100 µs 1.04 0.0 2.01 0.01 0. At high case temperatures.05 0.g.2 0.3 0.. the transistor must not be subjected to greater dissipation than the curves indicate.2 0.5 0. Active Region Safe Operating Area http://onsemi. COLLECTOR CURRENT (AMP) 5.0 1.0 ms TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BD787 (NPN) BD788 (PNP) 60 V 2. Switching Time Test Circuit 1.0 7.0 0.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. D = t1/t2 0.07 0. TIME (ns) RB 0 VCC = 30 V IC/IB = 10 TJ = 25°C 200 D1 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 100 tr 70 50 30 20 td @ VBE(off) = 5. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.2 0.BD787 BD788 + 30 V 25 µs 500 VCC 300 RC + 11 V SCOPE .0 5. e.0 Figure 3.06 D1 MUST BE FAST RECOVERY TYPE. TJ(pk) may be calculated from the data in Figure 4.05 1. i.0 5.05 RθJC(t) = r(t) RθJC RθJC = 8.02 0 (SINGLE PULSE) 0.4 0. Turn–On Time D = 0.0 ms 500 µs 5.0 0.0 0. TIME (ms) 5.1 r(t).02 0.6 IC.5 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 P(pk) 0.0 10 50 70 100 20 30 VCE.TC = P(pk) RθJC(t) 20 50 100 200 Figure 4.0 t.1 0.01 1.0 2.02 t1 0.0% t.05 0.7 0.5 0.34°C/W MAX 0.

TIME (ns) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts TJ = 25°C C. CAPACITANCE (pF) 1000 300 200 tf 100 70 100 Cib 70 50 30 Cob 20 50 30 20 0.0 4.2 VCE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 3. Turn–Off Time 70 100 Figure 7.6 1.04 0.1 0.0 10 0.0 10 20 30 VR.1 0.4 0.06 0.6 1.04 0.0 V VCE = 3.0 V 1.1 0. Capacitance NPN BD787 NPN BD788 200 400 300 VCE = 1. DC CURRENT GAIN hFE.com 181 2.0 V TJ = 150°C 200 25°C hFE. COLLECTOR CURRENT (AMP) 0.4 0.2 0. COLLECTOR CURRENT (AMP) Figure 9. COLLECTOR CURRENT (AMP) 2.2 0.0 2.0 V TJ = 150°C 100 25°C 70 50 -55°C 30 20 30 20 0.0 Figure 8.0 TJ = 25°C TJ = 25°C 1.2 0.4 0.1 0.04 0.0 4.0 5.4 0.6 1. “On” Voltages http://onsemi.2 0.06 0.0 0.0 IC.0 7.0 2. VOLTAGE (VOLTS) 1.0 4.6 1.0 IC.6 V.06 (NPN) (PNP) 0.0 IC.2 0. VOLTAGE (VOLTS) V. DC Current Gain 2.0 2.0 IC.0 V VCE = 3.06 IC.0 3.0 4.0 .8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3. COLLECTOR CURRENT (AMP) 2. COLLECTOR CURRENT (AMP) 2.0 (NPN) (PNP) 10 1. DC CURRENT GAIN 50 -55°C 100 70 50 VCE = 1.0 V 0.1 0.04 0. REVERSE VOLTAGE (VOLTS) Figure 6.BD787 BD788 200 2000 700 500 t.04 0.06 4.4 0.6 1.2 0.4 0.6 1.0 0 0.4 VCE(sat) @ IC/IB = 10 0 0.

6 1.+2.0 4.0 +2.5 0.5 0.06 0.5 +1. TEMPERATURE COEFFICIENTS (mV/°C) BD787 BD788 *APPLIES FOR IC/IB ≤ hFE/3 +1. COLLECTOR CURRENT (AMP) 0.0 θV.04 0.0 -1.4 0.5 +1.06 .55°C to 25°C -0.5 +2.04 0.5 +2.5 -1.5 25°C to 150°C *θVC FOR VCE(sat) 0 .5 -1.0 .55°C to 25°C 0.4 0.1 IC.55°C to 25°C -2. COLLECTOR CURRENT (AMP) Figure 10.0 IC.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.0 4.5 *θVC FOR VCE(sat) 25°C to 150°C 0 .0 2.55°C to 25°C -0.6 1. TEMPERATURE COEFFICIENTS (mV/°C) θV. Temperature Coefficients http://onsemi.com 182 2.2 0.1 0.2 0.0 -1.5 25°C to 150°C θVB FOR VBE -2.0 +0.0 -2.5 25°C to 150°C θVB FOR VBE .0 +0.

0 183 Publication Order Number: BD809/D . 2001 – Rev.ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . Junction to Case Symbol Max Unit θJC 1.0 Vdc Collector Current IC 10 Adc Base Current IB 6. Tstg –55 to +150 C Operating and Storage Junction Temperature Range 10 AMPERE POWER TRANSISTORS PNP SILICON 60.0 Adc MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ hFE = 30 (Min) @ IC = 2.39 C/W CASE 221A–09 TO–220AB  Semiconductor Components Industries. LLC. 80 VOLTS 90 WATTS THERMAL CHARACTERISTICS Characteristic Thermal Resistance. 2001 May. designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. .0 Adc Total Device Dissipation TC = 25C Derate above 25C PD 90 720 Watts mW/C TJ.

f = 1.0 Adc.BD809 BD810 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector–Emitter Sustaining Voltage* (IC = 0. 1 ms 5 ms 10 3 PD.0 V) (IC = 4.5 — MHz Current–Gain Bandwidth Product (IC = 1.1 1 3 10 30 VCE.1 Vdc Base–Emitter On Voltage* (IC = 4. VCE = 2.3 0.0 Vdc. POWER DISSIPATION (WATTS) IC.0 Vdc) VBE(on) — 1.5 ms 1 ms dc 1 0. IC = 0) IEBO DC Current Gain (IC = 2. Active Region DC Safe Operating Area (see Note 1) Figure 2. IE = 0) ICBO Emitter Cutoff Current (VBE = 5. IB = 0.0 Adc.0 A. COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 0 100 0 25 50 75 100 125 150 175 TC. Power–Temperature Derating Curve http://onsemi.6 Vdc fT 1. VCE = 2. Duty Cycle  2.0 V) hFE mAdc mAdc Collector–Emitter Saturation Voltage* (IC = 3. COLLECTOR CURRENT (AMP) 90 .3 Adc) VCE(sat) — 1. VCE = 10 Vdc. IB = 0) Min Max Unit — — Vdc 80 — 1.0%.0 30 15 — — BVCEO Collector Cutoff Current (VCB = 80 Vdc. VCE = 2.0 Adc. CASE TEMPERATURE (°C) Figure 1.0 A.com 184 .0 — 2.0 MHz) *Pulse Test: Pulse Width  300 µs.1 Adc.

Collector Saturation Region 2. VOLTAGE (VOLTS) 2.0 V 10 5.2 2.BD809 BD810 NPN BD809 PNP BD810 500 500 TJ = 150°C 100 -55°C 50 20 VCE = 2.0 V 0.8 V.0 IC.0 20 10 50 100 200 500 1000 IB.4 1.4 TJ = 25°C 2.0 20 VCE = 2.0 2.6 1.2 IC = 1.5 1.6 0.2 0 5.0 2.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2. “On” Voltages http://onsemi. COLLECTOR CURRENT (AMP) 0.0 0.8 0.2 0.0 A 1.6 8.com 185 10 20 . COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .0 1.4 0.0 IC.5 1.6 1. COLLECTOR CURRENT (AMP) 10 20 2.0 IC.5 TJ = 150°C 200 25°C hFE.8 1.0 4.0 V 0.4 TJ = 25°C 2.0 10 0 20 VCE(sat) @ IC/IB = 10 0.0 0.8 2.0 TJ = 25°C 1.0 V 0.0 TJ = 25°C 1.2 IC.8 0 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. BASE CURRENT (mA) 2000 5000 Figure 4. VOLTAGE (VOLTS) V.2 0 5.0 A 0.0 5.2 25°C 100 -55°C 50 20 10 5.4 0.8 1.0 A 0.0 5.0 A 0. BASE CURRENT (mA) 2000 5000 VCE .0 1.8 VBE @ VCE = 2. DC CURRENT GAIN 200 10 5.0 IC = 1.4 1.5 1.4 2.8 4.2 1.4 VCE(sat) @ IC/IB = 10 0. COLLECTOR CURRENT (AMP) Figure 5.6 1. DC CURRENT GAIN hFE.0 2.0 5. COLLECTOR CURRENT (AMP) 0.0 A 0. DC Current Gain 2.0 A 8.2 VBE(sat) = IC/IB = 10 0.0 10 20 50 100 200 500 1000 IB.0 1.6 1.

2 0.1 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.3 0. http://onsemi.01 0.com 186 .02 0.02 0.e. the transistor must not be subjected to greater dissipation than the curves indicate. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 1.5 0. Thermal Response Note 1: The data of Figure 1 is based on TJ(pk) = 150C.05 0.1 θJC(t) = r(t) θJC 0.05 SINGLE PULSE 0..03 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .2 0.05 0.r(t).01 0.5 D = 0.03 0.0 0. i.07 0.1 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.2 0.0 t.0 2.0 3. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.01 SINGLE P(pk) PULSE 0.7 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD809 BD810 1. D = t1/t2 100 200 300 500 1000 Figure 6. At high case temperatures. PULSE WIDTH (ms) 20 30 50 t1 t2 DUTY CYCLE.02 0.0 5.TC = P(pk) θJC(t) 0.3 0. TC is variable depending on conditions.

Power Derating  Semiconductor Components Industries.6 0.8 0.2 0 0 25 75 50 100 TC. for use as output devices in complementary general purpose amplifier applications. Junction to Case 1. 2001 March. LLC. Tstg CASE 340D–02 SOT 93. .) @ 5 Adc Monolithic Construction with Built–in Base Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5.0 Watts W/C –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range TJ.ON Semiconductor NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100–120 VOLTS 125 WATTS HFE = 1000 (min.0 C/W Thermal Resistance.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 1. TO–218 TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 1. .0 Vdc Collector Current — Continuous — Peak IC 10 20 Adc Base Current IB 0.4 0. 10 187 Publication Order Number: BDV65B/D . 2001 – Rev. CASE TEMPERATURE (°C) 125 150 Figure 1.0 DERATING FACTOR 0.

4 mAdc Collector Cutoff Current (VCB = 50 Vdc.0 Adc. IB = 0) ICEO — 1. TC = 150C) ICBO — 2. COLLECTOR CURRENT (A) Figure 3.BDV65B BDV64B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc.0 Vdc Base–Emitter Saturation Voltage (IC = 5. COLLECTOR CURRENT (A) 1K 1 10 0. IB = 0. DC Current Gain 1 IC.0 mAdc hFE 1000 — — Collector–Emitter Saturation Voltage (IC = 5.1 1 IC. DC Current Gain http://onsemi.0 Vdc) NPN PNP 10K hFE . VCE = 4.1 Figure 2. IE = 0.0 Vdc) VBE(on) — 2.0 mAdc Collector Cutoff Current (VCB = 100 Vdc.02 Adc) VCE(sat) — 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Adc. DC CURRENT GAIN hFE .5 Vdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc. IE = 0) ICBO — 0.0 Vdc. IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 5. DC CURRENT GAIN VCE = 4 V 10K 1K 4 0.0 Adc.com 188 10 . VCE = 4. IC = 0) IEBO — 5.

02 0. COLLECTOR CURRENT (A) Figure 4. TC is variable depending on conditions.03 0. COLLECTOR CURRENT (A) Figure 5.01 0.e.0 ms SECONDARY BREAKDOWN LIMITED @ TJ  150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B.0 5 t. TIME (ms) 10 Figure 7.1 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 0. the transistor must not be subjected to greater dissipation than the curves indicate. Active Region Safe Operating Area 1. BDV64B 10 50 30 VCE.01 D = 0.05 0. “On” Voltages There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. The data of Figure 6 is based on TJ(pk) = 150C. COLLECTOR CURRENT (A) 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation i.0 0.TC = P(pk) ZθJC(t) 0.. TJ(pk) may be calculated from the data in Figure 7. 100 µs 50 20 10 dc 5 5.1 t2 DUTY CYCLE.BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 1 VBE(sat) @ IC/IB = 250 0. D = t1/t2 (SINGLE PULSE) 0.0 ms 1. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.01 t1 0.1 10 1 IC. COLLECTOR-EMITTER VOLTAGE (V) 1 10 100 r(t).05 0.5 1. “On” Voltages 100 IC. At high case temperatures.0°C/W MAX 0.1 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1. VOLTAGE (V) V. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6.1 V.5 0. VOLTAGE (V) 10 0.1 1 IC.2 0.com 189 50 100 500 1000 . Thermal Response http://onsemi. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.2 0.

Junction to Case Symbol Max Unit RθJC 1.0 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 0.) @ IC = 5.ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 .) @ IC = 5. BDW47 * • High DC Current Gain – hFE = 2500 (typ.0 Adc.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 85 0.68 Watts W/C –55 to +150 C Operating and Storage Junction Temperature Range TJ. Tstg CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance.) @ IC = 10. LLC.) — BDW46 100 Vdc (min. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • *ON Semiconductor Preferred Device VCEO(sus) = 80 Vdc (min. Power Temperature Derating Curve Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 Vdc (max.) — BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2. 9 190 Publication Order Number: BDW42/D .0 Vdc (max.  Semiconductor Components Industries.0 Adc 3. CASE TEMPERATURE (°C) Figure 1.0 Adc Monolithic Construction with Built–In Base Emitter Shunt resistors TO–220AB Compact Package DARLINGTON 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 85 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BDW46 BDW42 BDW47 Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB Rating Collector–Emitter Voltage 5. designed for general purpose and low speed switching applications. . 2001 March. .47 C/W PD. POWER DISSIPATION (WATTS) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC. 2001 – Rev.

BDW42 BDW46 BDW47 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 2.0 — — — 200 300 300 — DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.5 Vdc VCE = 36 Vdc BDW46/BDW47 Adc 3.8 1.0 — — 1. f = 1. VCE = 3.0 Vdc) VBE(on) Vdc Vdc SECOND BREAKDOWN (2) Second Breakdown Collector Current with Base Forward Biased BDW42 IS/b VCE = 28.0 Adc.com 191 MHz pF . IE = 0) (VCB = 100 Vdc.0 — 2.0 3.0 1000 250 — — — — 2.0 kHz) hfe (1) Pulse Test: Pulse Width = 300 µs. IB = 50 mAdc) VCE(sat) Base–Emitter On Voltage (IC = 10 Adc. VCE = 4. Duty Cycle = 2. IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 5. IE = 0.0 1.0 2. f = 0. (2) Pulse Test non repetitive: Pulse Width = 250 ms.0 MHz) Output Capacitance (VCB = 10 Vdc. IB = 0) VCEO(sus) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc.2 3.0 Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) (IC = 30 mAdc. VCE = 3. VCE = 4. VCE = 4.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 5.4 Vdc VCE = 40 Vdc VCE = 22. IB = 0) (VCE = 50 Vdc. f = 1. IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc.0 1.0 Vdc.0 — 3.2 — — — — 4. IE = 0) BDW41/BDW46 BDW42/BDW47 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.1 MHz) fT Cob BDW42 BDW46/BDW47 Small–Signal Current Gain (IC = 3.0 Adc. http://onsemi. IB = 10 mAdc) (IC = 10 Adc.0%.0 Adc.0 Adc.0 Vdc.0 Vdc) (IC = 10 Adc.0 Vdc.

0 IC.0 k SCOPE  150 .0 3.0 VCC .g.7 0.0 0.05 0.com 192 5.0 V 0 3.0 2.12 V tr. e.3 0.3 0.5 0.2 + 4.: 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA TUT RB V2 5.0% for td and tr.0 7.5 0.0 RC APPROX + 8.BDW42 BDW46 BDW47 51 V1 APPROX D1  8.30 V 0.0 V 25 µs ts 2. tf  10 ns DUTY CYCLE = 1.0 t.1 0. Switching Times Figure 2. TIME (s) µ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES.7 1. D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities tf 1.07 0.0 10 . COLLECTOR CURRENT (AMP) Figure 3. Switching Times Test Circuit http://onsemi.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 td @ VBE(off) = 0 V 0.

i. the transistor must not be subjected to greater dissipation than the curves indicate.05 1. COLLECTOR CURRENT (AMP) IC.0 5. D = t1/t2 0.1 0.2 0.02 t1 0.02 0.05 0.0 IC.2 BDW46 BDW47 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TJ(pk) may be calculated from the data in Figure 4.5 0. BDW42 20 30 2. *Linear extrapolation http://onsemi.5 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 0.0 7.03 SINGLE PULSE t2 DUTY CYCLE. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6.0 5.0 2.1 0.TC = P(pk) RθJC(t) 50 100 200 300 500 1000 Figure 4.2 0.0 1.05 0.e.03 0. TC is variable depending on conditions.1 P(pk) 0.05 1.0 10 t.1 ms 20 10 TJ = 25°C 1.0 2.0 ms 5.0 7.1 0.0 10 50 70 100 20 30 VCE.0 2.5 D = 0.com 193 . Thermal Response ACTIVE–REGION SAFE OPERATING AREA 50 0.2 0. The data of Figure 5 and 6 is based on TJ(pk) = 200C.0 10 50 70 100 VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS) 0. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.0 ms 5. At high case temperatures..92°C/W 0.0 0.5 1.0 3. TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .02 0.0 0.0 3.r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDW42 BDW46 BDW47 1.01 0.05 RθJC(t) = r(t) RθJC RθJC = 1.5 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 0.0 5.1 0.5 ms dc 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C.7 0.0 1.01 0. COLLECTOR CURRENT (AMP) 50 BDW42 10 TJ = 25°C 1.1 ms 20 Figure 5.01 0.0 2.0 0.3 0.5 ms dc 0.2 0.0 3.07 0.

0 0.7 1. SMALL-SIGNAL CURRENT GAIN 10. 47 (PNP) BDW42 (NPN) 10 1.6 IC = 2.2 0.0 TJ = 25°C 2.0 5. 47 (PNP) BDW42 (NPN) 30 0.0 10 20 0. BASE CURRENT (mA) 20 30 .0 A 2.3 0. Collector Saturation Region http://onsemi.3 0.0 10 IB. DC CURRENT GAIN 20.0 A 6.0 A 6. REVERSE VOLTAGE (VOLTS) 0. FREQUENCY (kHz) 200 BDW46.0 10 0.000 5000 100 50 7000 5000 TJ = 150°C 3000 25°C 2000 1000 700 500 -55°C 300 200 0.0 5.7 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9.8 1.0 2.3 0. BASE CURRENT (mA) 20 30 VCE .1 5.0 0.0 7.BDW42 BDW46 BDW47 300 TJ = + 25°C 5000 3000 2000 200 C.2 1. 47 (PNP) 20. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE . COLLECTOR CURRENT (AMP) 0.7 1.000 hFE.0 A 2.0 V IC = 3. Capacitance BDW40.4 1.1 500 1000 1.2 0.0 3.7 1. COLLECTOR CURRENT (AMP) 3.0 10 IC.0 TJ = 25°C 2.0 7.0 3.0 A 4.000 1000 500 300 200 100 TJ = 25°C VCE = 3.0 2.0 10 IB. 41.000 VCE = 3.5 0.0 VCE = 3.5 0.0 2.000 TJ = 150°C 3000 2000 25°C 1000 500 300 200 0.5 0.com 194 4.0 3.0 7.0 Cob 100 Cib 70 50 10 20 50 100 f.0 2.5 VR.0 5.2 Figure 7.0 3.8 1.0 A 2. 42 (NPN) BDW45. Small–Signal Current Gain Figure 8.0 V 10.2 1.0 A 50 30 20 BDW46.0 5.1 -55°C 0.0 5.0 Figure 10. DC Current Gain 3.0 V 10. 46.5 0.0 7. CAPACITANCE (pF) hFE.0 2.6 IC = 2.3 IC.4 1. DC CURRENT GAIN hFE.

5 0. COLLECTOR CURRENT (AMP) Figure 12.3 0.0 REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.0 5.3 IC. TEMPERATURE COEFFICIENT (mV/ °C) Figure 11.5 0.6 +0.1 -55°C to 25°C 0.0 +1.0 3.2 -1.4 VBE.0 3.1 0. Collector Cut–Off Region http://onsemi. 47 (PNP) 3.0 θV.6 +0.4 100°C 25°C +0.0 V 1.0 10 IC.5 VBE(sat) @ IC/IB = 250 1.7 1.4 -0. VOLTAGE (VOLTS) TJ = 25°C 2.0 *θVC for VCE(sat) -2.2 0.0 10 IC.2 0 -0.0 VCE(sat) @ IC/IB = 250 0.5 5.BDW42 BDW46 BDW47 BDW40.0 5.7 2.0 -5.0 3.0 -55°C to 25°C 0 -1.6 -0.0 +1.0 0.0 10 +5.1 2.0 TJ = 25°C 2.0 0.0 +4. Temperature Coefficients 104 103 105 FORWARD REVERSE IC.5 VBE @ VCE = 4. COLLECTOR CURRENT (AMP) 0.2 0.0 2.0 *IC/IB  250 +3.5 1.2 + 1. TEMPERATURE COEFFICIENTS (mV/°C) θV. BASE-EMITTER VOLTAGE (VOLTS) Figure 13.0 -4. 46.0 2.0 VBE(sat) @ IC/IB = 250 1.0 25°C to 150°C θVB for VBE 0.0 0 -1.2 +0.0 *θVC for VCE(sat) -2.5 1. “On” Voltages 7.0 10 VCE(sat) @ IC/IB = 250 0.8 +1.1 0.0 +1.0 -55°C to +25°C -4.6 -0.4 FORWARD VBE. COLLECTOR CURRENT (AMP) +5. 41.0 25°C to 150°C +2.com 195 . COLLECTOR CURRENT (AMP) 0.0 VBE @ VCE = 4.3 IC.5 V. BASE-EMITTER VOLTAGE (VOLTS) 0 +0. COLLECTOR CURRENT (A) µ IC. COLLECTOR CURRENT (A) µ 105 VCE = 30 V 102 101 TJ = 150°C 100 10-1 +0.0 -3.0 +4. VOLTAGE (VOLTS) V.2 -0.4 +0.0 3.2 0.0 +25°C to 150°C +2.0 5.0 -5.2 -1.0 7.3 0.0 0.5 0.8 -1.2 0.0 3.0 *IC/IB  250 +3.5 0. 42 (NPN) BDW45.4 -0.0 2.0 7.7 1.0 2.0 V 1.0 -55°C to +25°C θVB for VBE +25°C to 150°C -3.

BDW42 BDW46 BDW47 NPN BDW42 COLLECTOR PNP BDW46 BDW47 BASE COLLECTOR BASE  8.0 k EMITTER  60 EMITTER Figure 14.0 k  60  8. Darlington Schematic http://onsemi.com 196 .

0 Adc — BDX33B. 34C Low Collector–Emitter Saturation Voltage VCE(sat) = 2. Junction to Case Symbol Max Unit RθJC 1.) at IC = 4. 2001 – Rev. Tstg CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance.0 Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min. designed for general purpose and low speed switching applications.ON Semiconductor NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* .56 Watts W/C –65 to +150 C Operating and Storage Junction Temperature Range TJ. LLC.) — BDX33C. 2001 March. . 9 197 Publication Order Number: BDX33B/D .0 Vdc Collector Current — Continuous Peak IC 10 15 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 70 0.  Semiconductor Components Industries.5 Vdc (max. . 33C/34B. 34B 100 Vdc (min. PNP BDX34B * BDX34C • High DC Current Gain — • • • • hFE = 2500 (typ.) at IC = 3.) — BDX33B. 34C Monolithic Construction with Build–In Base–Emitter Shunt resistors TO–220AB Compact Package *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 70 WATTS MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage Rating Collector–Emitter Voltage VEB 5.78 C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC. CASE TEMPERATURE (°C) Figure 1.com 198 140 160 . Power Derating http://onsemi.BDX33B BDX33C BDX34B BDX34C PD.

IB = 6.0 Vdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage1 (IC = 100 mAdc. IE = 0) VCEO(sus) BDX33B/BDX34B BDX33C/BDX34C Vdc VCER(sus) BDX33B/BDX34B BDX33C/BDX33C Vdc VCEX(sus) BDX33B/BDX34B BDX33C/BDX34C Vdc ICEO TC = 25C TC = 100C mAdc ICBO TC = 25C TC = 100C Emitter Cutoff Current (VBE = 5. RBE = 100) Collector–Emitter Sustaining Voltage1 (IC = 100 mAdc.25 s. VCE = 3. VCE = 3.0 5.5 Vdc) Collector Cutoff Current (VCE = 1/2 rated VCEO.0 Vdc) BDX33B. 34C Diode Forward Voltage (IC = 8. IC = 0) mAdc ON CHARACTERISTICS DC Current Gain1 (IC = 3.0 Vdc) BDX33B.5 10 — — 1. 34C Base–Emitter On Voltage (IC = 3.0 mAdc) BDX33B. 34C Collector–Emitter Saturation Voltage (IC = 3. IB = 0) Collector–Emitter Sustaining Voltage1 (IC = 100 mAdc. Pulse Test non repetitive: Pulse Width = 0.0 Adc.0 Adc.0 Vdc.com 199 .5 Vdc VBE(on) — 2. Duty Cycle  2. VBE = 1. 33C/34B.0 IEBO — 10 mAdc hFE 750 — — VCE(sat) — 2.BDX33B BDX33C BDX34B BDX34C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 80 100 — — 80 100 — — 80 100 — — — — 0. IB = 0) Collector Cutoff Current (VCB = rated VCBO.5 Vdc VF — 4.0%. IB = 0. 33C/34B. http://onsemi.0 Adc) 1 2 Pulse Test: Pulse Width  300 µs. 33C/34B.0 Adc. IB = 0.

1 0. D = t1/t2 0.0 3.02 1.0 3.05 0.05 BDX34B BDX34C 2.TC = P(pk) RθJC(t) 50 100 200 300 500 1000 Figure 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 70 100 .r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B BDX33C BDX34B BDX34C 1.2 0.05 0.0 ms 1.1 P(pk) 0.05 0.02 0.0 ms 500 µs 20 100 µs IC.01 0.5 0.3 0.com 5.07 0.02 0.0 70 100 200 100 µs dc BDX33B BDX33C 2.1 TC = 25°C 0.03 0.0 0.2 0. TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . COLLECTOR CURRENT (AMP) 10 5.0 ms 1.5 0.0 5.0 2.0 ms 500 µs BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.0 10 20 30 50 VCE.1 0.01 0. Thermal Response IC.05 RθJC(t) = r(t) RθJC RθJC = 1.0 10 20 30 50 VCE.5 0.0 7.0 TC = 25°C 5.0 10 t.0 0.01 0.0 1.2 0.03 SINGLE PULSE SINGLE PULSE t2 DUTY CYCLE.0 5.7 0.0 1.0 2. Active–Region Safe Operating Area http://onsemi.02 1.2 0.02 t1 0.2 0.0 2.3 0.0 0.5 D = 0.0 5.92°C/W 0.5 1.0 7.1 0.0 3. COLLECTOR CURRENT (AMP) 20 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 5.

0 5.5 1..e. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 2. FREQUENCY (kHz) 200 500 1000 30 0.0 Adc 100 50 30 20 10 2.0 5. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150C.0 Cob 100 10 20 50 100 f. SMALL-SIGNAL CURRENT GAIN 10. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150C.0 Vdc IC = 3. TJ(pk) may be calculated from the data in Figure 4. i. Small–Signal Current Gain http://onsemi.BDX33B BDX33C BDX34B BDX34C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.0 10 20 VR.0 Cib 70 50 PNP NPN 1. Capacitance Figure 3.2 0. REVERSE VOLTAGE (VOLTS) Figure 4. TC is variable depending on conditions. At high case temperatures.000 1000 500 300 200 TJ = 25°C VCE = 4.com 201 50 100 . CAPACITANCE (pF) hFE.1 PNP NPN 0. 300 TJ = 25°C 5000 3000 2000 200 C.

0 TJ = 25°C 2.5 10 VCE(sat) @ IC/IB = 250 0.0 7. COLLECTOR CURRENT (AMP) Figure 7. DC CURRENT GAIN 20.8 1.BDX33B BDX33C BDX34B BDX34C NPN BDX33B.0 IC.7 1.0 10 IB.0 2.0 7.0 0.5 V.com 202 5.3 2. BASE CURRENT (mA) 20 30 3. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE . COLLECTOR CURRENT (AMP) 0.0 V 1.7 1.3 0. VOLTAGE (VOLTS) TJ = 25°C 2.6 IC = 2.0 3.0 5.1 VCE = 4.0 V 5.3 0.000 VCE = 4.0 3.0 5.3 0. 33C PNP BDX34B. COLLECTOR CURRENT (AMP) 25°C 1000 500 0.5 0.2 TJ = 150°C 3000 500 0.0 0. BASE CURRENT (mA) 10 20 30 Figure 6.0 3. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.0 2.000 TJ = 150°C 5000 3000 2000 25°C 1000 -55°C 5000 2000 300 200 300 200 0.0 0.5 2.2 0.0 3.0 V 10.0 3.5 0.6 IC = 2.000 hFE.0 IB.000 hFE.0 7.0 VBE(sat) @ IC/IB = 250 0.5 VBE @ VCE = 4.0 A 2.0 TJ = 25°C 2.0 7.0 0.0 IC.3 0.2 0.0 7.0 2.8 1.1 5.0 2.1 IC.5 0.0 7.0 1.0 A 6. Collector Saturation Region 3.4 1.0 10 -55°C 0.0 IC.5 VBE @ VCE = 4. DC Current Gain TJ = 25°C 2.0 10 .5 0. VOLTAGE (VOLTS) V.0 A 4.5 VCE(sat) @ IC/IB = 250 0. “On” Voltages http://onsemi.7 1.7 1.1 0.0 VCE .7 1. 34C 20.4 1.2 0.5 0.2 1.0 2.0 10 3.0 VBE(sat) @ IC/IB = 250 1.0 2.0 A 2. DC CURRENT GAIN 10.0 5. COLLECTOR CURRENT (AMP) 0.7 1.5 0.0 A 6.0 V 1.3 0.0 3.2 1.0 3.0 A 4.

. 2001 – Rev. . 54C Low Collector–Emitter Saturation Voltage — VCE(sat) = 2. 2001 March.0 Vdc (Max) @ IC = 5.0 Vdc (Max) @ IC = 3. LLC.48 Watts W/C TJ. Junction to Case RθJC 70 C/W  Semiconductor Components Industries.0 Adc Collector Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 80 Vdc (Min) — BDX53B. 54B = 100 Vdc (Min) — BDX53C.0 Vdc IC 8.0 Adc Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 65 WATTS MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol BDX53B BDX54B BDX53C BDX54C Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB 5. 9 203 Publication Order Number: BDX53B/D .2 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 60 0. Junction to Ambient RθJA 70 C/W Thermal Resistance. BDX54C • High DC Current Gain — • • • • hFE = 2500 (Typ) @ IC = 4.0 12 Adc Base Current IB 0.ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B .0 Adc = 4. Tstg –65 to +150 C Collector Current — Continuous Peak Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. designed for general–purpose amplifier and low–speed switching applications.

Power Derating http://onsemi.0 40 1. TEMPERATURE (°C) Figure 1.0 20 0 TA 0 20 40 60 80 100 120 T.com 204 140 160 . POWER DISSIPATION (WATTS) BDX53B BDX53C BDX54B BDX54C TA 4.0 TC 80 3.0 60 TC 2.PD.

Switching Times http://onsemi. BDX54B BDX53C.2 +4. BDX54B BDX53C.5 0.0 Adc.0 APPROX +8.0 Adc. IC = 12 mA) VBE(sat) — 2. VCE = 3. BDX54B BDX53C. 53C BDX54B.0 Vdc.0 0. IB = 0) VCEO(sus) BDX53B.0 VCC -30 V RC 3.0 V 0 51 V1 APPROX D1  8. f = 1.BDX53B BDX53C BDX54B BDX54C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 0.2 tr td @ VBE(off) = 0 V 0. BDX54C Collector Cutoff Current (VCE = 40 Vdc. D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities tf 1. BDX54C Collector Cutoff Current (VCB = 80 Vdc.0 k  120 -12 V tr.07 0. IB = 0) BDX53B.2 0. IE = 0. IB = 12 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 3.05 0.5 0.0 0.5 0.0 3.0 SCOPE t. COLLECTOR CURRENT (AMP) Figure 3.3 0.0 2. f = 0. IB = 0) (VCE = 50 Vdc. TIME (s) µ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES.7 0.0 V 25 µs ts 2.2 750 — — — 2.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 3.0% for td and tr. e. IE = 0) BDX53B. Switching Time Test Circuit VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.0 — — — — 300 200 DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 3. 5. Duty Cycle  2%. VCE = 4.0 10 .5 Vdc hfe 4. IE = 0) (VCB = 100 Vdc.7 1.com 205 5.0 MHz) Output Capacitance (VCB = 10 Vdc. tf  10 ns DUTY CYCLE = 1.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc.g.: 1N5825 USED ABOVE IB  100 mA MSD6100 USED BELOW IB  100 mA TUT RB V2 0.0 Adc.1 Figure 2.0 4.1 MHz) Cob BDX53B.1 0.3 IC.5 — — 0. BDX54C Vdc ICEO mAdc ICBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 7.0 Adc. 54C pF (1) Pulse Test: Pulse Width  300 µs.

02 t1 0.5 0. 100 µs 500 µs 10 5. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.0 0. Thermal Response 20 IC.07 0. FREQUENCY (kHz) 500 200 1000 30 0. Capacitance http://onsemi. i.02 1. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 0.5 1.1 0. Safe operating area curves indicate IC –VCE limits of the transistor that must be observed for reliable operation.1 Figure 6.000 1000 500 300 200 TJ = 25°C VCE = 3. SMALL-SIGNAL CURRENT GAIN 10.3 0.0 2.0 V IC = 3. TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. The data of Figure 5 is based on TJ(pk) = 150C.0 ms 1.0 7.0 A 100 50 30 20 10 1.0 ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0. BDX54B BDX53C. REVERSE VOLTAGE (VOLTS) Figure 7.5 0.0 3.com 206 50 100 . COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5.2 1. Small-Signal Current Gain PNP NPN 0.0 5.1 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown.1 0.0 5.0 10 50 VCE.0 1.0 0. At high case temperatures.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .0 2.2 0. CAPACITANCE (pF) hFE.2 0.05 BDX53B. D = t1/t2 0.0 Cob 100 10 20 50 100 f. COLLECTOR CURRENT (AMP) 5.5 D = 0.0 5.01 0.02 0.05 0.05 0.0 Cib 70 50 PNP NPN 2. BDX54C 0.1 P(pk) 0.03 0.92°C/W 0.0 5.01 0.2 0.02 0..0 2.e.0 20 30 2.0 10 20 0.05 RθJC(t) = r(t) RθJC RθJC = 1. TJ(pk) may be calculated from the data in Figure 4.0 3.r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX53B BDX53C BDX54B BDX54C 1. Active–Region Safe Operating Area 300 TJ = + 25°C 5000 3000 2000 200 C. the transistor must not be subjected to greater dissipation than the curves indicate.0 10 t.2 0.03 SINGLE PULSE 0. TC is variable depending on conditions.TC = P(pk) RθJC(t) SINGLE PULSE t2 DUTY CYCLE.7 0.5 VR.

5 0.0 10 .5 2.0 7.0 7. 54C 20.3 0. BASE CURRENT (mA) 10 20 30 Figure 9.6 IC = 2.2 0.0 V VCE(sat) @ IC/IB = 250 0.0 TJ = 25°C 2.0 0.0 V 1.7 1.1 0.3 0.2 1.0 2.7 1.0 VBE(sat) @ IC/IB = 250 0.2 0.7 1.0 V TJ = 150°C 25°C 1000 -55°C 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 500 300 200 0. DC Current Gain TJ = 25°C 2.com 207 5.5 0.1 300 200 0.3 0.0 2. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .000 5000 20.7 1.7 1.5 0.0 3. Collector Saturation Region 3. DC CURRENT GAIN hFE.5 0.8 1.0 A 4.0 7.0 A 2.000 3000 2000 VCE = 4.5 VCE(sat) @ IC/IB = 250 0.0 3.0 IC.8 1. DC CURRENT GAIN 10.0 A 4.0 5.0 2.0 A 2.0 7.5 VBE @ VCE = 4.2 0.0 10 IB.0 10 2. COLLECTOR CURRENT (AMP) 5.2 0.1 0.0 1.0 0.0 7.6 IC = 2.0 2.0 A 6.0 2.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.000 hFE.0 TJ = 25°C 2.5 1. VOLTAGE (VOLTS) V.0 3.4 1.0 2.0 10 0.0 IB.7 1. COLLECTOR CURRENT (AMP) 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.4 1.0 V 10.0 10 3.0 3. 53C PNP BDX54B. COLLECTOR CURRENT (AMP) 5.0 7.000 VCE = 4.0 IC. “On” Voltages http://onsemi.5 V.5 0.5 0.2 1.0 0.0 1.0 VCE .0 3.0 3.3 0.3 0.0 A 6.5 0. VOLTAGE (VOLTS) TJ = 25°C 2.0 IC.BDX53B BDX53C BDX54B BDX54C NPN BDX53B.0 3.0 5.0 5. COLLECTOR CURRENT (AMP) Figure 10.3 IC. BASE CURRENT (mA) 20 30 3.

4 104 103 FORWARD REVERSE VCE = 30 V 102 101 TJ = 150°C 100°C 100 10-1 +0. BDX53C 0.0 +1.0 k  120  8.0 +5.0 -1.0 +4. COLLECTOR CURRENT (A) µ IC. Temperature Coefficients 104 105 REVERSE FORWARD IC. COLLECTOR CURRENT (AMP) Figure 11.0 3.0 0. BASEEMITTER VOLTAGE (VOLTS) 0 -0.0 θV.0 25°C to 150°C θVB for VBE -4.2 0.4 VBE.0 -3.0 25°C to 150°C +2.0 -2. BDX54C +5. TEMPERATURE COEFFICIENT (mV/ °C) θV.8 +1.6 -0.2 -1.0 -55°C to 25°C 0 *θVC for VCE(sat) -1.0 -3.0 2.6 +0.2 0.BDX53B BDX53C BDX54B BDX54C PNP BDX54B.0 +4.6 +0.6 -0.4 +0.7 1. Darlington Schematic http://onsemi. COLLECTOR CURRENT (AMP) 0.4 -0. Collector Cut–Off Region NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C BASE COLLECTOR BASE  8.com 208 . BASEEMITTER VOLTAGE (VOLTS) Figure 12.0 *IC/IB  hFE/3 +3.7 1.0 +1. TEMPERATURE COEFFICIENT (mV/ °C) NPN BDX53B.0 10 *IC/IB  hFE/3 +3.0 -55°C to 25°C 0 *θVC for VCE(sat) -1.0 7.0 -5.2 +0.4 25°C +0.0 3.0 25°C to 150°C θVB for VBE -4.8 -1.3 IC.0 k EMITTER  120 EMITTER Figure 13.0 -2.0 -5.0 7.5 0.2 -0.4 -0.0 2. COLLECTOR CURRENT (A) µ 105 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10-1 -0.3 0.2 + 1.0 25°C to 150°C +2.0 +1.2 VBE.1 -55 to 150°C 0.2 0 +0.0 10 IC.0 5.0 5.1 -55 to 150°C 0.5 0.

Switching Regulators and Motor Control.0 6.0 Vdc Collector Current — Continuous — Peak IC ICM 10 20 Adc Base Current — Continuous — Peak IB IBM 3. LLC. 2001 March. 2001 – Rev. monolithic. This device is specifically designed for unclamped. 10 209 Publication Order Number: BU323Z/D . Tstg –65 to +175 C Symbol Max Unit RθJC 1. high–voltage power Darlington with a built–in active zener clamping circuit.0 Watts W/C TJ.ON Semiconductor BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar.0 C/W TL 260 C Total Power Dissipation Derate above 25C (TC = 25C) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. inductive applications such as Electronic Ignition.0 Adc PD 150 1. Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds  Semiconductor Components Industries. and exhibit the following main features: • Integrated High–Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the –40°C to +125°C Temperature Range • Clamping Energy Capability 100% Tested in a Live • • • 360 V CLAMP Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT–93/TO–218 Type or TO–220 Packages CASE 340D–02 SOT–93/TO–218 TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 350 Vdc Collector–Emitter Voltage VEBO 6.

0 Vdc) Vdc Vdc VBE(on) (TC = –40°C to +125°C) Diode Forward Voltage Drop (IF = 10 Adc) VF DC Current Gain (IC = 6. f = 1.25 Adc) VBE(sat) Collector–Emitter Saturation Voltage (IC = 7.0 V) Cib — — 550 pF WCLAMP 200 — — mJ OFF CHARACTERISTICS (1) Collector–Emitter Clamping Voltage (IC = 7.0 mH. IB = 0) ICEO — — 100 µAdc Emitter–Base Leakage Current (VEB = 6. VCE = 2. IB = 0. RBE = 100 Ω) (see Figures 2 and 4) SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time Storage Time Cross–over Time (IC = 6.0 Adc. f = 1. IB = 0. VCE = 4.0 Adc. VCE = 10 Vdc.5 — — — — — — — — — — 1.0 MHz) Cob — — 200 pF Input Capacitance (VEB = 6.7 1.BU323Z ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCLAMP 350 — 450 Vdc Collector–Emitter Cutoff Current (VCE = 200 V. IE = 0. Duty Cycle = 2.5 A.25 Adc) Base–Emitter On Voltage (IC = 5. VCE = 2. IB1 = 45 mA. VCE = 1. IB = 100 mAdc) (IC = 10 Adc. VBE(off) = 0.0 Adc. http://onsemi.1 Adc) (TC = 125°C) (IC = 10 Adc.2 Adc. VCC = 14 V V. VZ = 300 V) (1) Pulse Test: Pulse Width ≤ 300 µs.0 Adc.0 A.5 150 500 — — — 3400 fT — — 2.0 Adc. L = 8.0 Adc. IB = 0.1 1. RBE(off) = 0.0 MHz Output Capacitance (VCB = 10 Vdc.5 Adc.8 1. IC = 0) IEBO — — 50 mAdc — — — — 2.1 2.0 MHz) CLAMPING ENERGY (see notes) Repetitive Non–Destructive Energy Dissipated at turn–off: (IC = 7.3 — — 2.0%.0 A) (TC = –40°C to +125°C) ON CHARACTERISTICS (1) Base–Emitter Saturation Voltage (IC = 8.8 2.0 Vdc) (IC = 8.1 1. IB = 70 mAdc) VCE(sat) (TC = 125°C) (IC = 8.6 1.0 Vdc.5 Vdc) (IC = 5.2 2.com 210 tfi — 625 — ns tsi tc — 10 30 µs — 1.6 Vdc) Vdc Vdc hFE (TC = –40°C to +125°C) — DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.3 — — 2.7 — µs .

1 0. and the inductance. VBE(off).0 A.5 A Output transistor turns on: IC = 40 mA VCE MONITOR (VGATE) High Voltage Circuit turns on: IC = 20 mA RBE = 100 Ω Avalanche diode turns on: IC = 100 µA 250 V 300 V 340 V Icer Leakage Current L INDUCTANCE (8 mH) IB CURRENT SOURCE VCE VCLAMP NOMINAL = 400 V VBEoff IB2 SOURCE IC MONITOR IC CURRENT SOURCE 0. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. to the minimum guaranteed repetitive energy.01 0. Therefore. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. Vgate = 280 V. The bias parameters. the transistor is turned on again as soon as a voltage. During an auto–protect cycle. Forward Bias Safe Operating Area http://onsemi.com 211 1000 . The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.1 Ω NON INDUCTIVE Figure 1. are applied according to the Device Under Test (DUT) specifications. IB = 100 mA.0 A. IC. IC = f(VCE) Curve Shape Figure 2. Note: All BU323Z ignition devices are 100% energy tested. determined by the zener threshold and the network. IB1.” Because of the built–in zener and associated network. This prevents the transistor from going into a Reverse Bias Operating limit condition. ICL = 100 mA.0 mH IC. the BU323Z has a built–in avalanche diode and a special high voltage driving circuit. is reached.BU323Z IC MERCURY CONTACTS WETTED RELAY INOM = 6. VCLAMP.001 10 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340V VCE. as specified in the device parameter section. IB2. ICH = 5. Basic Energy Test Circuit By design. COLLECTOR CURRENT (AMPS) 10 1 300µs 1ms TC = 25°C 10ms 250ms 0. L = 8. per the test circuit and criteria described in Figures 2 and 4. RBE = 100 Ω. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. the device will have an extended safe operating area and will always appear to be in “FBSOA.

thus enabling the sustained energy level required. see the test schematic diagram. the VCE remains outside the shaded area and greater than the VGATE minimum limit.com 212 . for the inductive load and ICPEAK/IB/VBE(off) biases. IC LOW VCE (c) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value. The transistor PASSES the Energy test if. Figure 4d. IC LOW VCE (d) VGATE MIN Figure 4. without an external clamp. Energy Test Criteria for BU323Z http://onsemi. Figure 2. and 4c. ICPEAK IC HIGH IC LOW VCE (a) VGATE MIN IC ICPEAK IC HIGH IC LOW VCE (b) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b. and the transistor is not damaged. Figure 4a.BU323Z IC The shaded area represents the amount of energy the device can sustain. This assures that hot spots and uncontrolled avalanche are not being generated in the die. under given DC biases (IC/IB/VBE(off)/ RBE).

8 0.5 5A 3.4 1. DC Current Gain VCE . COLLECTOR CURRENT (AMPS) Figure 10.0 7A 1.0 3.5 TJ = 25°C IC = 3 A 4.1 1 IC.com 213 10 . BASE-EMITTER VOLTAGE (VOLTS) VBE.0 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. COLLECTOR CURRENT (AMPS) TJ = 125°C 2.4 0.6 0.5 V 10 100 1000 1000 IC.4 TJ = 25°C 1. COLLECTOR CURRENT (AMPS) 10 Figure 8.0 1. BASE-EMITTER VOLTAGE (VOLTS) IC/IB = 150 TJ = 25°C 1.5 1.0 0.2 125°C 1. BASE CURRENT (MILLIAMPS) 100 2. Collector Saturation Region 1.0 125°C 0.0 1.8 0.8 0. TJ = 25°C VCE = 1.6 1.5 2.8 VCE = 2 VOLTS 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE . Base–Emitter Saturation Voltage 1 IC.1 1 IC. DC Current Gain 10000 1000 IC.4 1.2 1. Base–Emitter “ON” Voltages http://onsemi.0 0.0 8A 10 A 2. COLLECTOR CURRENT (MILLIAMPS) 10 100 10000 5.2 1.4 VBE(on). COLLECTOR CURRENT (MILLIAMPS) 10 2.1 Figure 9.2 Figure 7. Collector–Emitter Saturation Voltage 2.6 0.6Σ TYP + 6Σ 100 VCE = 5 V.6 IC/IB = 150 2.8 100000 Figure 6.8 1. DC CURRENT GAIN TYPICAL 1000 -40°C 25°C 100 TYP .0 25°C 0.BU323Z 10000 10000 TJ = 125°C hFE.0 4. DC CURRENT GAIN hFE.5 0 1 10 IB.6 1.

Junction to Case RθJC 2.ON Semiconductor BU406 BU407 NPN Power Transistors These devices are high voltage. high speed transistors for horizontal deflection output stages of TV’s and CRT’s.48 Watts W/C TJ. Tstg –65 to 150 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. 2001 – Rev.08 C/W Thermal Resistance. LLC. 4 214 CASE 221A–09 TO–220AB Publication Order Number: BU406/D . TC = 25C Derate above TC = 25C PD 60 0. Junction to Ambient RθJA 70 C/W TL 275 C Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds  Semiconductor Components Industries. • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC TO–220AB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS MAXIMUM RATINGS Symbol BU406 BU407 Unit Collector–Emitter Voltage Rating VCEO 200 150 Vdc Collector–Emitter Voltage VCEV 400 330 Vdc Collector–Base Voltage VCBO 400 330 Vdc Emitter Base Voltage VEBO 6 Vdc Collector Current — Continuous Peak Repetitive Peak (10 ms) IC 7 10 15 Adc Base Current IB 4 Adc Total Device Dissipation. 2001 March.

BU406 BU407 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 200 150 — — — — Vdc — — — — — — 5 0.3 0. VBE = 0) (VCE = Rated VCEO + 50 Vdc. f = 1 MHz) SWITCHING CHARACTERISTICS Inductive Load Crossover Time (VCC = 40 Vdc. Duty Cycle  1%. Maximum Rated Forward Bias Safe Operating Area http://onsemi. L = 150 µH) (1) Pulse Test: Pulse Width  300 µs.5 Adc. VCE = 10 Vdc. 100 50 30 TJ = 100°C IC.2 0.5 0. DC CURRENT GAIN 70 10 25°C VCE = 5 V 20 10 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. COLLECTOR CURRENT (AMP) hFE. IB = 0) BU406 BU407 Collector Cutoff Current (VCE = Rated VCEV. IB1 = IB2 = 0. COLLECTOR CURRENT (AMPS) 5 7 10 dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 0.75 µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage(1) (IC = 100 mAdc.7 1 IC. VBE = 0.1 1 IEBO — — 1 mAdc Collector–Emitter Saturation Voltage (IC = 5 Adc. BU407 mAdc ON CHARACTERISTICS (1) Forward Diode Voltage (IEC = 5 Adc) “D” only DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0. IC = 0) BU406.5 Adc) VCE(sat) — — 1 Vdc Base–Emitter Saturation Voltage (IC = 5 Adc. IB = 0.2 Vdc VEC — — 2 Volts fT 10 — — MHz Cob — 80 — pF tc — — 0.1 TC = 25°C 2 Figure 11.com 215 200 . ftest = 20 MHz) Output Capacitance (VCB = 10 Vdc. IE = 0.5 Adc) VBE(sat) — — 1. IB = 0.5 Adc. VBE = 0) (VCE = Rated VCEO + 50 Vdc. DC Current Gain 3 BU407 BU406 5 7 10 50 70 100 20 30 VCE. TC = 150C) ICES Emitter Cutoff Current (VEB = 6 Vdc.1 2 3 0. IC = 5 Adc.

7 0. Tstg –65 to 150 C Collector Current — Continuous — Peak (1) Base Current — Continuous Base Current — Peak (1) *Total Device Dissipation @ TC = 25C *Derate above 25°C Operating and Storage Temperature ICM IB IBM THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C/W RθJC RθJA 5 71.  Semiconductor Components Industries.2 216 Publication Order Number: BUD44D2/D . High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).7 Collector–Emitter Sustaining Voltage CASE 369A–13 1.118 . MAXIMUM RATINGS VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 12 Vdc IC 2 5 Adc 1 2 Adc PD 25 0.4 TL 260 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 6.3 2.6 0.3 0.063 0. High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.265″ Unit 1. LLC.070″ Rating 1.8 Value 30 Symbol 0.6 0. Therefore.265 6. there is no need to guarantee an hFE window. Duty Cycle ≤ 10%.090 0.ON Semiconductor BUD44D2 High Speed. 2001 March.090 C (1) Pulse Test: Pulse Width = 5 ms.2 Watt W/C TJ. Main features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector–Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • Six Sigma Process Providing Tight and Reproductible Parameter CASE 369–07 Spreads ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ • It’s characteristics make it also suitable for PFC application.063 2. 2001 – Rev.

2 (IEC = 1 Adc) @ TC = 25°C 1.9 0. di/dt = 10 A/µs) V @ TC = 25°C Tfr 415 @ TC = 25°C (IF = 0. IB = 0) @ TC = 25°C @ TC = 125°C ICEO 50 500 µAdc Collector Cutoff Current (VCE = Rated VCES.65 1 (IC = 0.65 0.5 (IC = 2 Adc. IB = 0.2 Adc.5 Vdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCEO.BUD44D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA.2 Adc) @ TC = 25°C @ TC = 125°C 0. IB = 0.4 Adc) @ TC = 25°C 0. VEB = 0) Emitter–Cutoff Current (VEB = 10 Vdc. VCE = 1 Vdc) VCE(sat) Vdc hFE @ TC = 25°C @ TC = 125°C 20 18 32 26 (IC = 1 Adc. IB = 40 mAdc) VBE(sat) Vdc @ TC = 25°C @ TC = 125°C 0.6 (IEC = 0.4 Adc.2 Adc) @ TC = 125°C 0. IB = 40 mAdc) @ TC = 25°C @ TC = 125°C 0.com 217 ns . di/dt = 10 A/µs) @ TC = 25°C 340 http://onsemi. VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C ICES 50 500 100 µAdc IEBO 100 µAdc Collector Cutoff Current (VCE = 500 V.9 @ TC = 25°C @ TC = 125°C 0.5 (IC = 1 Adc.5 0.35 0.4 Adc.4 Adc.76 1 0.9 1. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.87 0.25 0.78 0. VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 10 7 14 9.67 0.4 Adc. VCE = 5 Vdc) @ TC = 25°C 8 11 — DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 0.5 Forward Recovery Time (see Figure 22 bis) (IF = 0.27 0.28 0.6 (IC = 1 Adc.4 0.1 1.4 Adc.2 Adc) Collector–Emitter Saturation Voltage (IC = 0.45 0.8 1 (IEC = 0.2 Adc) VEC 0. L = 25 mH) VCEO(sus) 400 470 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 920 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14. IB = 20 mAdc) DC Current Gain (IC = 0.8 @ TC = 25°C @ TC = 125°C 0. di/dt = 10 A/µs) @ TC = 25°C 390 (IF = 1 Adc.

5 Adc. VCE = 10 Vdc.C.BUD44D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 IC = 0.5 1.5 Adc. f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc.8 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 1.5 1.2 2A VCC = 300 V @ 1 µs @ TC = 25°C @ TC = 125°C @ 3 µs @ TC = 25°C @ TC = 125°C 0.1 1.25 µs @ TC = 25°C @ TC = 125°C ton 600 ns @ TC = 25°C @ TC = 125°C toff 1000 ns http://onsemi.com 218 400 600 750 1300 .2 Adc IB2 = 0. f = 1 MHz) Cob 50 75 pF Input Capacitance (VEB = 8 Vdc) Cib 240 500 pF SWITCHING CHARACTERISTICS: Resistive Load (D. IB1 = 50 mAdc IB2 = 250 mAdc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 90 105 150 ns @ TC = 25°C @ TC = 125°C toff 1. ≤ 10%.5 0 5 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 0. IB1 = 0. IE = 0.4 A IB1 = 40 mA VCC = 300 V IC = 1 A IB1 = 0 0.3 @ 1 µs @ TC = 25°C @ TC = 125°C 4.3 6.8 VCE(dsat) V 3.8 @ 3 µs @ TC = 25°C @ TC = 125°C 0.4 12. Pulse Width = 40 µs) Turn–on Time Turn–off Time IC = 1 Adc.

com 219 2. VCC = 15 V.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 100 100 175 ns Fall Time @ TC = 25°C @ TC = 125°C tf 110 180 150 ns @ TC = 25°C @ TC = 125°C ts 2.65 2.35 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 180 400 300 ns Fall Time @ TC = 25°C @ TC = 125°C tf 150 175 225 ns @ TC = 25°C @ TC = 125°C ts 1.4 Adc IB1 = 40 mAdc IB2 = 40 mAdc http://onsemi.95 µs @ TC = 25°C @ TC = 125°C tc 250 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 0.BUD44D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.55 0.2 Adc IC = 1 Adc IB1 = 0.8 1.05 2.2 150 330 .05 1.5 Adc IC = 0.45 1. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tf 110 105 150 ns @ TC = 25°C @ TC = 125°C ts 0.7 0.2 Adc IB2 = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 0.75 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 85 80 150 ns Fall Time @ TC = 25°C @ TC = 125°C tf 100 90 150 ns @ TC = 25°C @ TC = 125°C ts 1.4 Adc IB1 = 40 mAdc IB2 = 0.

01 0. Collector–Emitter Saturation Voltage 10 10 IC/IB = 20 VCE .1 IC.001 0.1 0.5 A 1A 2 10 10 TJ = 25°C 3 0.1 1 IC.001 1 0. DC Current Gain @ 5 Volt VCE .001 10 TJ = 25°C 400 mA 1 TJ = 25°C TJ = 125°C 1 TJ = -20°C IC = 200 mA 0 1 10 100 IB. VOLTAGE (VOLTS) IC/IB = 10 VCE . VOLTAGE (VOLTS) 4 TJ = -20°C 20 0 0.BUD44D2 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V 80 hFE .01 0.1 IC.01 0.1 1 IC.001 1000 Figure 15. COLLECTOR CURRENT (AMPS) 80 TJ = 125°C 60 40 Figure 13.com 220 1 . COLLECTOR CURRENT (AMPS) Figure 18. COLLECTOR CURRENT (AMPS) Figure 14. DC CURRENT GAIN VCE = 1 V TJ = 125°C 60 TJ = 25°C 40 TJ = -20°C 20 0 0. Collector–Emitter Saturation Voltage http://onsemi. DC CURRENT GAIN hFE . Collector–Emitter Saturation Voltage 0.01 0. DC Current Gain @ 1 Volt IC/IB = 5 2A 1.1 0. COLLECTOR CURRENT (AMPS) 0.1 0. VOLTAGE (VOLTS) VCE . Collector Saturation Region 10 Figure 16. VOLTAGE (VOLTS) 0. BASE CURRENT (mA) 0.1 1 IC.01 0. COLLECTOR CURRENT (AMPS) TJ = 25°C 1 TJ = 125°C TJ = -20°C TJ = 25°C 1 TJ = 125°C TJ = -20°C 0.001 10 Figure 17.

Base–Emitter Saturation Region 1 0.1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) Figure 8.01 0.01 0. COLLECTOR CURRENT (AMPS) 25°C 1 125°C 0. COLLECTOR CURRENT (AMPS) TJ = -20°C TJ = 125°C TJ = 25°C 0.BUD44D2 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 1 VBE .1 0. VOLTAGE (VOLTS) VBE . Base–Emitter Saturation Region 10 10 1 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE .01 1 Figure 7C. Base–Emitter Saturation Region 10 Figure 7B. VOLTAGE (VOLTS) IC/IB = 5 TJ = -20°C TJ = 125°C 1 TJ = -20°C TJ = 125°C TJ = 25°C TJ = 25°C 0. VOLTAGE (VOLTS) 0. COLLECTOR CURRENT (AMPS) 0.1 0.001 0.1 1 IC.01 0.1 1 IC.001 10 Figure 7A.1 IC. Forward Diode Voltage http://onsemi.1 0.001 0.com 221 10 .

5 2 IC/IB = 5 t. Inductive Storage Time.5 TJ = 125°C TJ = 25°C 0 1 IC. REVERSE VOLTAGE (VOLTS) 0 0. COLLECTOR CURRENT (AMPS) Figure 11. ton 2.8 IC. COLLECTOR CURRENT (AMPS) 0 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC = 0.4 0.5 1. STORAGE TIME (µs) TJ = 125°C TJ = 25°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1. TIME (s) µ 3 IBon = IBoff VCC = 300 V PW = 40 µs 3000 2500 2000 1000 1. TIME (ns) C.4 2 600 t.BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 1000 1000 TJ = 25°C f(test) = 1 MHz TJ = 125°C TJ = 25°C 800 IC/IB = 10 IBon = IBoff VCC = 300 V PW = 40 µs 100 t. COLLECTOR CURRENT (AMPS) Figure 9.2 100 1. toff 700 2 3 Figure 13. CAPACITANCE (pF) Cib (pF) Cob (pF) 10 600 400 IC/IB = 5 200 1 1 10 VR. Resistive Switch Time. Inductive Storage Time http://onsemi.com 222 15 . Inductive Switching.3 A 100 0 2 Figure 12.8 1. TIME (s) µ t.2 IC. tc & tfi @ IC/IB = 5 6 9 hFE. TIME (ns) 4 IC/IB = 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 500 400 TJ = 125°C TJ = 25°C tc 300 200 tfi 3 IC = 1 A 2 1 0 1 0. Capacitance 4000 IC/IB = 10 3500 Figure 10. COLLECTOR CURRENT (AMPS) 0 0. tsi @ IC/IB = 5 t si . Resistive Switch Time.5 1 1500 TJ = 125°C TJ = 25°C 0. FORCED GAIN 12 Figure 14.6 0.5 IC.

tc IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 2000 TJ = 125°C TJ = 25°C 500 VZ = 300 V LC = 200 µH 1. Inductive Switching.5 TJ = 125°C TJ = 25°C 0 Figure 19. COLLECTOR CURRENT (AMPS) 2000 1500 IC/IB = 20 1000 IB = 200 mA 0 2 3000 IB = 50 mA 1000 1.3 A IC = 1 A 3 TJ = 125°C TJ = 25°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC = 0. Inductive Crossover Time TJ = 125°C TJ = 25°C 800 IC = 1 A 600 IC = 0.com 223 2 .4 1000 IC/IB = 10 0 2 t.BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 700 t fi .2 0. Inductive Storage Time.5 1 1. Inductive Fall Time 900 2000 700 t. TIME (ns) IBon = IBoff VCC = 15 V 2500 VZ = 300 V LC = 200 µH IB = 100 mA IB = 500 mA 0 0. TIME (ns) t. FALL TIME (ns) 600 500 TJ = 125°C TJ = 25°C 1000 400 300 200 100 0 5 7 11 9 hFE.5 2 IC. CROSSOVER TIME (ns) IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 500 3 2. COLLECTOR CURRENT (AMPS) Figure 20.5 1 1.5 IC. tsi IC/IB = 10 0. COLLECTOR CURRENT (AMPS) IC/IB = 5 15 IC/IB = 20 Figure 17. TIME (ns) 500 400 300 IC/IB = 10 200 IBon = IBoff VCC = 15 V 100 0 0. FORCED GAIN 13 800 400 200 0 15 3 6 Figure 15. tsi http://onsemi.2 IC. FORCED GAIN Figure 16. COLLECTOR CURRENT (AMPS) 0. Inductive Storage Time. Inductive Switching.6 0.3 A t c .6 IC.4 Figure 18. TIME (ns) t. tfi 3000 12 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1500 IC/IB = 20 600 9 hFE.8 1.8 1.

1 VF unless otherwise specified) VF VF tfr 0. Dynamic Saturation Voltage Measurements 2 3 4 TIME 6 7 Figure 22.com 224 10 8 .1 VF 0 IF 10% IF 0 5 2 6 4 8 Figure 22 bis. tfr Measurements http://onsemi.BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 90% IC IC 9 dyn 1 µs 8 dyn 3 µs 6 0V tfi tsi 7 10% Vclamp Vclamp 5 10% IC tc 4 90% IB 3 1 µs IB 90% IB1 IB 2 1 3 µs 0 TIME 1 0 Figure 21. Inductive Switching Measurements VFRM VFR (1.

BVCER 0. FORWARD CURRENT (AMP) Figure 24. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W VCE PEAK MTP8P10 MPF930 VCE RB1 MUR105 MPF930 +10 V IC PEAK 100 µF MTP8P10 IB1 Iout IB A 50 Ω MJE210 COMMON 150 Ω 3W 500 µF IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA MTP12N10 1 µF -Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL STATIC CHARACTERISTICS 440 TJ = 25°C BVCER (VOLTS) 1000 BVCER (VOLTS) @ 10 mA 900 800 700 600 BVCER(sus) @ 200 mA 500 400 10 100 RBE (Ω) t fr .5 1 1.5 IF.com 225 2 .BUD44D2 TYPICAL SWITCHING CHARACTERISTICS Table 1. Forward Recovery Time tfr http://onsemi. FORWARD RECOVERY TIME (ns) 1100 1000 dI/dt = 10 A/µs TC = 25°C 420 400 380 360 340 320 300 0 Figure 23.

8 Watt W/C TJ.5 TL 260 Operating and Storage Temperature THERMAL CHARACTERISTICS C/W Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C (1) Pulse Test: Pulse Width = 5 ms.ON Semiconductor BUH100 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers. 2 226 Publication Order Number: BUH100/D . This High voltage/High speed product exhibits the following main features: • Improved Efficiency Due to the Low Base Drive Requirements: • • High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions CASE 221A–09 TO–220AB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous — Peak (1) IC ICM 10 20 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 4 10 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 100 0.  Semiconductor Components Industries. This power transistor is specifically designed to sustain the large inrush current during either the start–up conditions or under a short circuit across the load. LLC. Duty Cycle ≤ 10%. 2001 March.25 62. 2001 – Rev. Tstg –65 to 150 C RθJC RθJA 1.

IB = 1.37 0.75 1.5 Adc VCC = 300 V @ TC = 25°C 1. f = 1 MHz) http://onsemi.1 V IC = 7. IB1 = 1. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 5 Adc.com 227 .5 Vdc Collector Cutoff Current (VCE = Rated VCEO.1 V — DYNAMIC SATURATION VOLTAGE VCE(dsat) ( ) IC = 5 Adc.5 0.5 — DC Current Gain (IC = 7 Adc.5 — DC Current Gain (IC = 10 Adc. VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 µAdc IEBO 100 µAdc Emitter–Cutoff Current (VEB = 9 Vdc.6 0.5 Adc.5 8 — 1. L = 25 mH) VCEO(sus) 400 460 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 5 Adc. IE = 0. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 6 4 9. f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc.7 V @ TC = 125°C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc. IB = 1 Adc) @ TC = 25°C VBE(sat) 1 1. VCE = 5 Vdc) hFE 15 16 24 28 @ TC = 25°C @ TC = 125°C 10 10 15 14.5 Vdc (IC = 7 Adc. IB = 1 Adc) @ TC = 25°C @ TC = 125°C VCE(sat) 0. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 8 7 12 10.37 0.6 Vdc 0.1 Vdc Collector–Emitter Saturation Voltage (IC = 5 Adc. f = 1 MHz) Cib 1300 1750 pF Dynamic Saturation V lt Voltage: Determined 3 µs after rising IB1 reaches 90% of final IB1 (See Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc.6 0. IB1 = 1 Adc VCC = 300 V @ TC = 25°C @ TC = 125°C 2.BUH100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA.5 Adc) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 1 Adc. VCE = 10 Vdc. IB = 0) ICEO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES. VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 µAdc Collector Base Current (VCB = Rated VCBO.

5 Adc http://onsemi. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tfi 150 180 250 ns @ TC = 25°C @ TC = 125°C tsi 5.2 Adc IB2 = 0.5 Adc IB2 = 1.5 8 µs @ TC = 25°C @ TC = 125°C ton 140 150 200 ns @ TC = 25°C @ TC = 125°C toff 3. ≤ 10%.6 3.2 Adc IB2 = 0.C.5 2.3 4 µs @ TC = 25°C @ TC = 125°C ton 250 800 500 ns @ TC = 25°C @ TC = 125°C toff 2.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 220 450 300 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 100 150 150 ns @ TC = 25°C @ TC = 125°C tsi 2 2.5 µs @ TC = 25°C @ TC = 125°C ton 500 900 700 ns @ TC = 25°C @ TC = 125°C toff 2.5 Adc IB1 = 1. IB1 = 1 Adc IB2 = 1 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 7.9 3. IB1 = 1.5 1 5 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 130 140 200 ns @ TC = 25°C @ TC = 125°C toff 6.2 Adc IC = 1 Adc IB1 = 0. VCC = 15 V.2 0 2 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 1 Adc.2 Adc IB2 = 0.5 Adc IC = 5 Adc IB1 = 1 Adc IB2 = 1 Adc IC = 7.1 5.5 2.com 228 . IB1 = 0.5 µs @ TC = 25°C @ TC = 125°C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 1 Adc IB1 = 0.1 2.2 Adc IB2 = 0. Pulse Width = 40 µs) Turn–on Time Turn–off Time IC = 1 Adc.4 0 4 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 5 Adc.5 Adc IB2 = 1.8 8.5 µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.8 3 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 260 300 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 100 140 150 ns @ TC = 25°C @ TC = 125°C tsi 2.5 2.9 4.5 Adc.6 3. IB1 = 0.BUH100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.8 6 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 230 300 325 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 150 170 250 ns @ TC = 25°C @ TC = 125°C tsi 2.4 4.

Collector–Emitter Saturation Voltage 0.01 0. Collector–Emitter Saturation Voltage Figure 21.1 TJ = -20°C 10 TJ = -20°C TJ = 125°C 0.01 0. DC Current Gain @ 1 Volt TJ = -20°C 10 VCE .01 IC.1 1 IC. DC CURRENT GAIN VCE = 1 V TJ = 25°C 0.01 0. COLLECTOR CURRENT (AMPS) 10 Figure 22. COLLECTOR CURRENT (AMPS) TJ = 125°C 1 0.001 TJ = 25°C Figure 20.5 10 IC/IB = 10 IC/IB = 5 VBE .001 100 TJ = -20°C TJ = 125°C 0. VOLTAGE (VOLTS) VCE . DC Current Gain @ 5 Volt 1.01 0. Base–Emitter Saturation Region http://onsemi.01 1 0.5 TJ = 125°C 0 0. VOLTAGE (VOLTS) hFE .com 229 10 .001 hFE .1 IC.1 1 IC. COLLECTOR CURRENT (AMPS) 1 TJ = -20°C 0.BUH100 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125°C TJ = -20°C 10 1 0.001 10 Figure 19.1 1 0. VOLTAGE (VOLTS) 0.001 10 TJ = 25°C Figure 23. COLLECTOR CURRENT (AMPS) 10 VCE = 5 V 1 TJ = 25°C 0.1 0. COLLECTOR CURRENT (AMPS) 1 TJ = 25°C 0. DC Current Gain @ 3 Volt 100 0.01 IC. DC CURRENT GAIN hFE .1 1 0.1 1 10 IC. COLLECTOR CURRENT (AMPS) Figure 24.01 TJ = 25°C 0. DC CURRENT GAIN 10 IC/IB = 5 TJ = 125°C 1 0.

com 230 100000 . COLLECTOR CURRENT (AMPS) 8A 5A 1 3A 2A 0.1 1 0. BASE CURRENT (A) 10 Figure 26.1 1 IB.BUH100 TYPICAL STATIC CHARACTERISTICS 2 1. Base–Emitter Saturation Region 10000 900 Cib 1000 100 TJ = 25°C TJ = 25°C f(test) = 1 MHz BVCER @ 10 mA 800 BVCER (VOLTS) C. CAPACITANCE (pF) 15 A 10 A 1.5 TJ = 25°C VCE .5 VCE(sat) (IC = 1 A) 0 0. Resistive Breakdown http://onsemi. 25 mH 10 1 10 VR.01 IC. Collector Saturation Region Figure 25.001 0. VOLTAGE (VOLTS) VBE . VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20°C TJ = 25°C 0. REVERSE VOLTAGE (VOLTS) 400 100 10 Figure 27.5 Cob 700 600 500 BVCER(sus) @ 500 mA.5 TJ = 125°C 0 0.01 10 0. Capacitance 100 1000 RBE (Ω) 10000 Figure 28.

Inductive Storage Time. tsi 7 4 IC. TIME (ns) IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH tfi 200 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 400 tfi 200 0 1 7 4 IC. tsi 600 800 TJ = 125°C TJ = 25°C 600 tc t.com 231 10 . Inductive Storage Time. Inductive Storage Time. toff 7 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 3 2 3 TJ = 125°C TJ = 25°C 1 2 7 4 IC. COLLECTOR CURRENT (AMPS) 10 Figure 13 Bis. COLLECTOR CURRENT (AMPS) 0 10 1 Figure 32. TIME (s) µ 4 6 8 IC. TIME (s) µ IC/IB = 5 t. tc & tfi @ IC/IB = 10 http://onsemi. TIME (s) µ t. ton 10 6 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 10 5 t. tc & tfi @ IC/IB = 5 4 7 IC. COLLECTOR CURRENT (AMPS) 1 TJ = 125°C TJ = 25°C 1 0 10 1 Figure 31. Inductive Storage Time. Resistive Switch Time. TIME (ns) 400 TJ = 125°C TJ = 25°C tc t. COLLECTOR CURRENT (AMPS) Figure 30.BUH100 TYPICAL SWITCHING CHARACTERISTICS 2500 10 IB1 = IB2 VCC = 300 V PW = 40 µs 8 IC/IB = 10 TJ = 125°C TJ = 25°C 1500 t. COLLECTOR CURRENT (AMPS) Figure 33. COLLECTOR CURRENT (AMPS) 0 10 0 Figure 29. Resistive Switching Time. TIME (ns) 2000 TJ = 125°C TJ = 25°C 1000 6 IB1 = IB2 VCC = 300 V PW = 20 µs IC/IB = 5 4 125°C 500 2 0 0 2 IC/IB = 10 IC/IB = 5 25°C 4 6 8 IC.

BUH100 TYPICAL SWITCHING CHARACTERISTICS 4 200 3 150 t fi . FORCED GAIN 8 9 Figure 36.com 232 10 9 10 . CROSSOVER TIME (ns) tsi .5 A 500 400 300 200 100 IC = 5 A TJ = 125°C TJ = 25°C 3 4 8 Figure 35. tc http://onsemi. Inductive Fall Time Figure 34.5 A 5 6 7 hFE. STORAGE TIME (µs) IC = 7. FORCED GAIN 100 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 50 0 10 8 3 4 IC = 5 A TJ = 125°C TJ = 25°C 6 7 hFE. Inductive Storage Time t c . FALL TIME (ns) IC = 5 A 2 IC = 7. FORCED GAIN 5 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 700 600 IC = 7. Inductive Crossover Time.5 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 1 TJ = 125°C TJ = 25°C 0 2 4 6 hFE.

com 233 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 . Inductive Switching Measurements Table 1.BUH100 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 9 IC dyn 1 µs tfi tsi 7 dyn 3 µs 6 5 0V 10% IC 10% Vclamp Vclamp tc 4 90% IB 90% IB1 IB 3 1 µs IB 90% IC 8 2 1 3 µs 0 TIME Figure 37. Dynamic Saturation Voltage Measurements 0 1 2 3 4 TIME 5 6 7 8 Figure 38. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V VCE RB1 Iout A 50 Ω 500 µF 150 Ω 3W IB1 IB IB2 RB2 MJE210 COMMON IC PEAK 100 µF MTP8P10 MTP12N10 1 µF -Voff http://onsemi.

COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 41.2 0 20 40 100 60 80 120 TC.com 234 800 . CASE TEMPERATURE (°C) 140 160 Figure 39.6 THERMAL DERATING 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. The data of Figure 22 is based on TC = 25°C. i. Forward Bias Safe Operating Area -1. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. At any case temperatures. The safe level is specified as a reverse biased safe operating area (Figure 23). Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. Reverse Bias Safe Operating Area http://onsemi..BUH100 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0. For inductive loads.5 V 300 400 600 700 500 VCE. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. COLLECTOR CURRENT (AMPS) IC. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Second breakdown limitations do not derate the same as thermal limitations. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 TC ≤ 125°C LC = 2 mH 10 0 200 Figure 40.e.8 0. TJ(pk) is variable depending on power level. 12 1 ms 10 5 ms 1 DC 10 µs IC.1 GAIN ≥ 5 8 6 4 -5 V 2 0V 0.4 0. the transistor must not be subjected to greater dissipation than the curves indicate. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.01 10 100 VCE. Forward Bias Power Derating TJ(pk) may be calculated from the data in Figure 24. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. COLLECTOR CURRENT (AMPS) 100 1 µs EXTENDED SOA 0.

5 0. TIME (ms) Figure 42.2 0.1 0. D = t1/t2 SINGLE PULSE 0.com 235 100 1000 .01 0.01 0.1 1 RθJC(t) = r(t) RθJC RθJC = 1.02 t2 DUTY CYCLE.1 P(pk) 0.05 t1 0.TC = P(pk) RθJC(t) 10 t.BUH100 TYPICAL THERMAL RESPONSE r(t). TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0. Typical Thermal Response (ZθJC(t)) for BUH100 http://onsemi.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .

2001 March. 2001 – Rev.  Semiconductor Components Industries.ON Semiconductor BUH150 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. 2 236 Publication Order Number: BUH150/D .2 Watt W/C TJ.85 62. Duty Cycle ≤ 10%. This power transistor is specifically designed to sustain the large inrush current during either the start–up conditions or under a short circuit across the load. Tstg –65 to 150 C RθJC RθJA 0.5 TL 260 Operating and Storage Temperature CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C/W C (1) Pulse Test: Pulse Width = 5 ms. LLC. This High voltage/High speed product exhibits the following main features: • Improved Efficiency Due to the Low Base Drive Requirements: • • High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous — Peak (1) IC ICM 15 25 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 6 12 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 150 1.

5 V — DYNAMIC SATURATION VOLTAGE VCE(dsat) ( ) IC = 5 Adc. f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc. IB = 2 Adc) @ TC = 25°C 0. VCE = 5 Vdc) hFE 4 2. VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 µAdc Collector Base Current (VCB = Rated VCBO.4 0.25 Vdc VCE(sat) 0. f = 1 MHz) http://onsemi.5 @ TC = 25°C @ TC = 125°C 8 6 12 10 — DC Current Gain (IC = 2 Adc.3 Vdc Collector Cutoff Current (VCE = Rated VCEO. IB = 4 Adc) @ TC = 25°C 2 5 Vdc DC Current Gain (IC = 20 Adc. IB1 = 2 Adc VCC = 300 V @ TC = 25°C 2. VCE = 5 Vdc) @ TC = 25°C 10 20 — 1. f = 1 MHz) Cib 1300 1750 pF Dynamic Saturation V lt Voltage: Determined 3 µs after rising IB1 reaches 90% of final IB1 (see Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc. L = 25 mH) VCEO(sus) 400 460 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.4 Vdc (IC = 10 Adc.4 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) 1 1. IB = 2 Adc) Collector–Emitter Saturation Voltage (IC = 2 Adc. VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 µAdc IEBO 100 µAdc Emitter–Cutoff Current (VEB = 9 Vdc. IB = 0.45 1 Vdc (IC = 20 Adc. VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 12 14 20 22 — DC Current Gain (IC = 100 mAdc. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 10 Adc. IE = 0.4 V @ TC = 125°C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc.8 V IC = 10 Adc. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 10 Adc.5 7 4.16 0. IB = 0) ICEO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES. VCE = 10 Vdc. IB1 = 1 Adc VCC = 300 V @ TC = 25°C @ TC = 125°C 2.BUH150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA.15 0.com 237 .

8 2.5 0 5 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 10 Adc.75 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 275 450 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 175 ns @ TC = 25°C @ TC = 125°C tsi 2.C.3 2. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 250 ns @ TC = 25°C @ TC = 125°C tsi 6.8 7. IB1 = 0.BUH150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.2 Adc IB2 = 0.25 4.75 µs Storage Time Fall Time IC = 2 Adc.4 Adc IC = 5 Adc IB1 = 0. VCC = 15 V.4 Adc IB2 = 0.5 8 8 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 235 240 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 170 250 ns @ TC = 25°C @ TC = 125°C tsi 6 7.5 Adc IB2 = 0.5 Adc IB2 = 0.1 7.5 µs @ TC = 25°C tf 240 350 ns Turn–off Time @ TC = 25°C toff 5. Pulse Width = 40 µs) Turn–on Time Storage Time Fall Time IC = 2 Adc.75 2.6 7 µs Turn–on Time @ TC = 25°C ton 100 200 ns @ TC = 25°C ts 6.6 3. IB1 = 0.3 6.5 µs @ TC = 25°C tf 320 500 ns @ TC = 25°C toff 6. ≤ 10%.5 8 µs @ TC = 25°C @ TC = 125°C ton 450 800 650 ns @ TC = 25°C @ TC = 125°C toff 2.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 250 270 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 140 150 ns @ TC = 25°C @ TC = 125°C tsi 3.2 Adc IC = 2 Adc IB1 = 0.75 µs @ TC = 25°C @ TC = 125°C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 0 4 Adc VCC = 300 Vdc Turn–off Time Turn–on Time Turn–off Time IC = 5 Adc. IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V. IB1 = 0.2 0 2 Adc VCC = 300 Vdc @ TC = 25°C ton 200 300 ns @ TC = 25°C ts 5.2 Adc IB2 = 0.9 3 µs @ TC = 25°C @ TC = 125°C ton 500 900 700 ns @ TC = 25°C @ TC = 125°C toff 2.com 238 .5 3.5 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc http://onsemi.4 Adc IB2 = 0.25 2.

1 1 10 IC.01 0.001 0. Collector–Emitter Saturation Voltage 10 1. VOLTAGE (VOLTS) 100 1 Figure 45.com 239 100 .001 100 0. COLLECTOR CURRENT (AMPS) Figure 48. DC Current Gain @ 1 Volt IC/IB = 5 TJ = -20°C VCE .5 0. DC Current Gain @ 5 Volt 1 TJ = 125°C 0. COLLECTOR CURRENT (AMPS) TJ = 125°C 1 0.1 1 TJ = -20°C 0. COLLECTOR CURRENT (AMPS) TJ = 25°C TJ = 125°C TJ = 25°C 0. COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = 25°C TJ = -20°C 0.BUH150 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125°C 10 1 0.001 TJ = -20°C 0. COLLECTOR CURRENT (AMPS) 100 Figure 46. DC CURRENT GAIN hFE .01 0. COLLECTOR CURRENT (AMPS) 10 VCE = 5 V 1 0.01 100 0.1 1 10 IC.5 IC/IB = 5 VBE .1 1 10 IC. VOLTAGE (VOLTS) hFE . Collector–Emitter Saturation Voltage 0.001 Figure 47. VOLTAGE (VOLTS) IC/IB = 10 VCE .1 1 10 IC.01 hFE .01 0.01 1 10 0.01 0. DC CURRENT GAIN VCE = 1 V TJ = 25°C 0. DC Current Gain @ 3 Volt 100 10 TJ = -20°C 10 0 0.001 100 Figure 43.01 TJ = 25°C Figure 44.1 0.1 IC.1 1 10 IC. Base–Emitter Saturation Region http://onsemi. DC CURRENT GAIN TJ = 125°C TJ = 25°C 0.

5 TJ = 125°C 1.5 1 20 A 15 A VCE(sat) (IC = 1 A) 0. BASE CURRENT (A) 100 10 Figure 50. Collector Saturation Region 10000 900 Cib (pF) TJ = 25°C f(test) = 1 MHz 1000 Cob (pF) 100 BVCER @ 10 mA 800 BVCER (VOLTS) C.01 0. CAPACITANCE (pF) 0. REVERSE VOLTAGE (VOLTS) 400 100 10 Figure 51.5 2 TJ = 25°C VCE . COLLECTOR CURRENT (AMPS) 0 0.01 100 Figure 49.1 8A 10 A TJ = 25°C 700 BVCER(sus) @ 200 mA 600 500 10 1 10 VR. Resistive Breakdown http://onsemi.001 0. Capacitance 100 RBE (Ω) Figure 52.5 5A 0 0.1 1 10 IC.com 240 1000 .BUH150 TYPICAL STATIC CHARACTERISTICS 1. VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20°C TJ = 25°C 0. Base–Emitter Saturation Region 1 IB. VOLTAGE (VOLTS) VBE .

COLLECTOR CURRENT (AMPS) 1 Figure 55. tsi t. Inductive Storage Time. TIME (s) µ IC/IB = 5 7 t. COLLECTOR CURRENT (AMPS) 13 0 15 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 450 800 TJ = 125°C TJ = 25°C IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 700 600 tc 350 250 10 Figure 13 Bis. TIME (ns) 1400 IC/IB = 10 125°C 800 400 25°C 200 IC/IB = 5 6 0 3 6 9 12 IC. COLLECTOR CURRENT (AMPS) IC/IB = 10 2 IC/IB = 5 0 15 8 6 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 10 7 6 t. toff 8 4 3 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 4 3 2 2 TJ = 125°C TJ = 25°C 1 1 3 TJ = 125°C TJ = 25°C 1 7 5 9 11 IC. ton 0 IB1 = IB2 VCC = 300 V PW = 20 µs 4 600 0 TJ = 25°C TJ = 125°C tfi 500 TC = 125°C TC = 25°C tc 400 300 tfi 200 150 100 50 1 3 7 5 9 11 IC. Inductive Storage Time. tsi t. Inductive Storage Time. TIME (s) µ 15 Figure 54. TIME (s) µ t. Inductive Storage Time. COLLECTOR CURRENT (AMPS) 13 0 15 0 Figure 56. TIME (ns) 550 7 4 IC.BUH150 TYPICAL SWITCHING CHARACTERISTICS 12 2000 IB1 = IB2 VCC = 300 V PW = 40 µs 1800 1600 10 25°C 8 125°C 1200 1000 t. Resistive Switch Time. COLLECTOR CURRENT (AMPS) Figure 57. COLLECTOR CURRENT (AMPS) 0 Figure 53. Resistive Switching. TIME (ns) 5 10 IC. tc & tfi @ IC/IB = 5 2 4 8 6 IC. tc & tfi @ IC/IB = 10 http://onsemi.com 241 10 .

CROSSOVER TIME (ns) tsi . STORAGE TIME (µs) 4 TJ = 125°C TJ = 25°C 5 6 7 hFE. FORCED GAIN 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 700 600 TJ = 125°C TJ = 25°C IC = 10 A 500 400 IC = 5 A 300 200 100 3 4 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 8 Figure 59. FALL TIME (ns) 150 3 2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 1 0 2 100 IC = 5 A 50 IC = 10 A 4 TJ = 125°C TJ = 25°C 6 hFE. Inductive Crossover Time http://onsemi. FORCED GAIN 0 10 8 IC = 10 A 3 5 4 6 7 hFE.BUH150 TYPICAL SWITCHING CHARACTERISTICS 5 200 IC = 5 A t fi . FORCED GAIN 8 9 Figure 60.com 242 10 9 10 . Inductive Storage Time t c . Inductive Fall Time Figure 58.

Inductive Switching Measurements Table 1.BUH150 TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 90% IC 8 dyn 1 µs 7 dyn 3 µs tfi tsi 6 Vclamp 5 0V 10% IC 10% Vclamp tc 4 90% IB 3 1 µs 2 IB IB 90% IB1 1 2 1 3 µs 0 0 3 TIME Figure 61.com 243 Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 . Dynamic Saturation Voltage Measurements 4 TIME 5 6 7 8 Figure 62. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V IC PEAK 100 µF MTP8P10 VCE RB1 IB1 IB Iout A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W IB2 RB2 MTP12N10 1 µF -Voff V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA http://onsemi.

TJ(pk) is variable depending on power level.com 244 800 .01 1 10 100 VCE. the transistor must not be subjected to greater dissipation than the curves indicate. Allowable current at the voltages shown on Figure 64 may be found at any case temperature by using the appropriate curve on Figure 63. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.4 0. Reverse Bias Safe Operating Area http://onsemi.. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 65. 16 10 5 ms DC 1 IC. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C.8 0.BUH150 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0. i. The safe level is specified as a reverse biased safe operating area (Figure 65). COLLECTOR CURRENT (AMPS) 100 0. For inductive loads. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.6 THERMAL DERATING 0. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. CASE TEMPERATURE (°C) 140 160 Figure 63. At any case temperatures. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased.e. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 64. Forward Bias Safe Operating Area GAIN ≥ 5 14 TC ≤ 125°C LC = 4 mH 12 10 8 6 -5 V 4 0V 2 0 300 -1. Second breakdown limitations do not derate the same as thermal limitations.5 V 400 500 600 700 VCE.1 0.2 0 20 40 80 120 100 60 TC. Forward Bias Power Derating TJ(pk) may be calculated from the data in Figure 66. The data of Figure 64 is based on TC = 25°C. COLLECTOR CURRENT (AMPS) 1 µs 10 µs 1 ms EXTENDED SOA IC.

1 1 RθJC(t) = r(t) RθJC RθJC = 0. Typical Thermal Response (ZθJC(t)) for BUH150 http://onsemi.2 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.83°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .TC = P(pk) RθJC(t) 10 t.01 0.5 0.05 t1 0. TIME (ms) Figure 66.1 P(pk) 0. D = t1/t2 SINGLE PULSE 0.com 245 100 1000 .02 0.1 0.BUH150 TYPICAL THERMAL RESPONSE r(t).01 t2 DUTY CYCLE.

2001 – Rev. LLC. This high voltage/high speed transistor exhibits the following main feature: • Improved Efficiency Due to Low Base Drive Requirements: • • • High and Flat DC Current Gain hFE Fast Switching ON Semiconductor Six Sigma Philosophy Provides Tight and Reproductible Parametric Distributions Specified Dynamic Saturation Data Full Characterization at 125°C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 500 Vdc Collector–Base Breakdown Voltage VCBO 800 Vdc Collector–Emitter Breakdown Voltage VCES 800 Vdc Emitter–Base Voltage VEBO 9 Vdc Collector Current — Continuous — Peak (1) IC ICM 4 8 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 2 4 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 50 0. 2 246 Publication Order Number: BUH50/D .  Semiconductor Components Industries.5 TL 260 Operating and Storage Temperature CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C/W C (1) Pulse Test: Pulse Width = 5 ms.5 62. Tstg –65 to 150 C RθJC RθJA 2.4 Watt W/C TJ.ON Semiconductor BUH50 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. 2001 March. Duty Cycle ≤ 10%.

5 V @ 1 µs @ TC = 25°C @ TC = 125°C 6 14 V @ 3 µs @ TC = 25°C @ TC = 125°C 0. IB = 0.32 0.75 5 V DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 IC = 1 A IB1 = 0 0.66 Adc) 100°C VBE(sat) Vdc 0.94 0. IC = 0) Vdc ICEO 100 µAdc ICES 100 1000 µAdc IEBO 100 µAdc ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 1 Adc.5 1 VCE(sat) Collector–Emitter Saturation Voltage (IC = 1 Adc.BUH50 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 500 Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA. IB = 1 Adc) @ TC = 25°C 0. IB = 0.33 33 A VCC = 300 V IC = 2 A IB1 = 0 0.66 66 A VCC = 300 V @ 1 µs @ TC = 25°C @ TC = 125°C @ 3 µs @ TC = 25°C @ TC = 125°C 0.6 1.2 1.com 247 . IB = 0. f = 1 MHz) fT 4 MHz Output Capacitance (VCB = 10 Vdc.86 0. IB = 0. L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO.33 Adc) (IC = 2 Adc. IB = 0) Collector Cutoff Current (VCE = Rated VCES. VCE = 5 Vdc) @ TC = 25°C DC Current Gain (IC = 2 Adc. VCE = 10 Vdc.2 0. VCE = 5 Vdc) @ TC = 25°C hFE Vdc 7 13 5 10 — — DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.66 Adc) 25°C (IC = 2 Adc.7 (IC = 3 Adc.3 0. f = 1 MHz) Cob 50 100 pF Input Capacitance (VEB = 8 Vdc) Cib 850 1200 pF VCE(dsat) 1.5 @ TC = 25°C 0.33 Adc) DC Current Gain (IC = 1 Adc. IB = 0.66 Adc) @ TC = 25°C @ TC = 125°C 0.5 (IC = 2 Adc. IE = 0.29 0. VEB = 0) @ TC = 25°C @ TC = 125°C Emitter–Cutoff Current (VEB = 9 Vdc.75 4 V http://onsemi.5 Adc.85 1.6 0.

01 10 Figure 67. DC CURRENT GAIN VCE = 1 V TJ = 125°C TJ = 25°C 10 TJ = -40°C 1 0.3 Adc IB2 = 0.4 0 4 Adc VCC = 125 Vdc @ TC = 25°C ton 95 250 ns @ TC = 25°C toff 2.5 µs IC = 2 Adc.01 0.4 Adc IB2 = 0.9 3. VCC = 15 V. IB1 = 0.5 2. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tf 80 95 150 ns @ TC = 25°C @ TC = 125°C ts 1. ≤ 10%.5 3. Pulse Width = 20 µs) Turn–on Time Turn–off Time Turn–on Time Turn–off Time Turn–on Time Turn–off Time IC = 2 Adc.BUH50 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.2 1.com 248 10 .C.66 Adc IB2 = 1 Adc Crossover Time TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V hFE .1 1 IC. DC Current Gain @ 1 Volt 0.4 Adc IB2 = 1 Adc VCC = 125 Vdc @ TC = 25°C ton 110 250 ns @ TC = 25°C toff 0.4 Adc IB2 = 1 Adc IC = 2 Adc IB1 = 0.75 µs @ TC = 25°C @ TC = 125°C tc 190 220 350 ns Storage Time Storage Time IC = 2 Adc IB1 = 0.95 2 µs IC = 1 Adc. COLLECTOR CURRENT (AMPS) Figure 68. IB1 = 0. COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = 25°C 10 TJ = -40°C 1 0. DC CURRENT GAIN hFE .3 0 3 Adc VCC = 125 Vdc @ TC = 25°C ton 100 200 ns @ TC = 25°C toff 2.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 150 180 300 ns Fall Time @ TC = 25°C @ TC = 125°C tf 90 100 150 ns @ TC = 25°C @ TC = 125°C ts 1.5 µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V. IB1 = 0.7 2.7 2.1 1 IC. DC Current Gain @ 5 Volt http://onsemi.

01 10 Figure 71.01 0.1 1 IC.com 249 100 . Collector Saturation Region 10 Figure 70. VOLTAGE (VOLTS) 0.1 0. Capacitance http://onsemi. COLLECTOR CURRENT (AMPS) Figure 72.1 1 IC. REVERSE VOLTAGE (VOLTS) Figure 74.1 1 IC.1 TJ = 25°C TJ = 125°C 1 TJ = -40°C TJ = 25°C TJ = 125°C 0. CAPACITANCE (pF) VBE . COLLECTOR CURRENT (AMPS) 0.01 0.BUH50 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 3 VCE .01 10 0. COLLECTOR CURRENT (AMPS) 1 0.01 TJ = 25°C 0.1 0.1 0.1 1 IC. VOLTAGE (VOLTS) VCE . BASE CURRENT (mA) 0.1 TJ = 125°C IC = 500 mA 0. Base–Emitter Saturation Region 10 10000 C. VOLTAGE (VOLTS) VCE . COLLECTOR CURRENT (AMPS) 100 Cob (pF) 10 1 10 Cib (pF) 1000 TJ = 25°C f(test) = 1 MHz 1 Figure 73. Collector–Emitter Saturation Voltage 10 10 IC/IB = 5 IC/IB = 3 TJ = -40°C VBE . Base–Emitter Saturation Region 10 VR.1 1 IB. VOLTAGE (VOLTS) IC/IB = 5 1 TJ = 125°C TJ = -40°C TJ = 25°C 0. Collector–Emitter Saturation Voltage 0. VOLTAGE (VOLTS) TJ = 25°C 4A 3A 1 2A 1A 1 TJ = -40°C 0.01 10 Figure 69.01 0.

COLLECTOR CURRENT (AMPS) 1 0 5 IC/IB = 5 1 Figure 75. COLLECTOR CURRENT (AMPS) 2000 tc 100 1000 0 TJ = 125°C TJ = 25°C 3 2 IC. tc & tfi @ IC/IB = 5 http://onsemi. Inductive Switching. TIME (ns) 5 Figure 76. TIME (ns) 4000 TJ = 125°C TJ = 25°C 0 4 3 Figure 79. STORAGE TIME (µs) 200 t. COLLECTOR CURRENT (AMPS) IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 125°C TJ = 25°C t si . TIME (ns) t. Inductive Storage Time 9 10 . COLLECTOR CURRENT (AMPS) 4 Figure 78. TIME (ns) 2000 IC/IB = 5 1500 2000 IC/IB = 3 1000 1000 500 0 IC/IB = 3 4 3 2 IC.com 250 4 5 6 7 hFE.BUH50 TYPICAL SWITCHING CHARACTERISTICS 3000 2500 4000 IBoff = IC/2 VCC = 125 V PW = 20 µs TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 3000 IBoff = IC/2 VCC = 125 V PW = 20 µs t. Resistive Switch Time. Resistive Switching. toff IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 3 3000 4 2 3 IC. FORCED GAIN 8 Figure 80. COLLECTOR CURRENT (AMPS) 1 TJ = 125°C TJ = 25°C tfi IC/IB = 5 0 4 1 3 2 IC. tsi TYPICAL CHARACTERISTICS 250 tc 150 100 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 0 1 3000 IC = 1 A 2000 1000 IC = 2 A tfi 3 2 IC. Inductive Storage Time. tc & tfi @ IC/IB = 3 Figure 77. TIME (ns) t. Inductive Storage Time. ton 4000 300 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 200 t.

Inductive Fall Time SECOND BREAKDOWN DERATING 0. FORCED GAIN 8 50 10 TJ = 125°C TJ = 25°C 3 7 hFE.4 0. FORCED GAIN 5 Figure 81. Forward Power Derating http://onsemi.BUH50 TYPICAL CHARACTERISTICS 150 t c . Inductive Crossover Time 1 0 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 2 A IC = 2 A POWER DERATING FACTOR t fi .8 0. FALL TIME (ns) 130 350 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 140 80 120 100 60 TC.6 THERMAL DERATING 0.com 251 160 11 . CASE TEMPERATURE (°C) 140 Figure 83. CROSSOVER TIME (ns) IC = 1 A 120 110 100 90 80 70 TJ = 125°C TJ = 25°C 60 50 2 4 IC = 1 A 250 150 6 hFE.2 20 40 9 Figure 82.

At any case temperatures. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation.com 252 900 . The safe level is specified as a reverse biased safe operating area (Figure 87).5 V 600 VCE. COLLECTOR CURRENT (AMPS) IC.e. Reverse Bias Safe Operating Area http://onsemi. COLLECTOR CURRENT (AMPS) 10 1 90% IB1 IB 0 300 -1. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Forward Bias Safe Operating Area TC ≤ 125°C LC = 500 µH 3 2 -5 V 1 0V 0. TYPICAL CHARACTERISTICS 10 VCE 90% IC IC 9 dyn 1 µs 8 6 0V tfi tsi 7 dyn 3 µs 10% Vclamp Vclamp 5 10% IC tc 4 IB 90% IB 3 1 µs 2 1 3 µs 0 TIME Figure 84..BUH50 TJ(pk) may be calculated from the data in Figure 88. The data of Figure 86 is based on TC = 25°C. TJ(pk) is variable depending on power level. the transistor must not be subjected to greater dissipation than the curves indicate.1 10 100 VCE. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. Inductive Switching Measurements IC. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 GAIN ≥ 3 4 6 8 7 1000 Figure 86. i. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 87. For inductive loads.01 4 TIME 5 1 µs 10 µs 0 Figure 85. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Allowable current at the voltages shown on Figure 86 may be found at any case temperature by using the appropriate curve on Figure 83. Second breakdown limitations do not derate the same as thermal limitations. Dynamic Saturation Voltage 1 ms 5 ms DC 1 2 3 EXTENDED SOA 0.

05 t1 0.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . Typical Thermal Response (ZθJC(t)) for BUH50 http://onsemi.com 253 100 1000 .1 1 RθJC(t) = r(t) RθJC RθJC = 2. D = t1/t2 SINGLE PULSE 0.BUH50 TYPICAL CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W MTP8P10 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V VCE RB1 IB1 Iout IB A 50 Ω 150 Ω 3W 500 µF IB2 RB2 MJE210 COMMON IC PEAK 100 µF MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA 1 µF -Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 r(t).TC = P(pk) RθJC(t) 10 t.2 P(pk) 0.1 0.1 0.02 t2 DUTY CYCLE. TIME (ms) Figure 88.01 0.5 0.01 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.

Tstg –65 to 150 C RθJC RθJA 2. 2 254 Publication Order Number: BUH51/D . 2001 March. This High voltage/High speed product exhibits the following main features: • Improved Efficiency Due to the Low Base Drive Requirements: • • High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Providing Tight and Reproducible Parametric Distributions ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 500 Vdc Collector–Base Breakdown Voltage VCBO 800 Vdc Collector–Emitter Breakdown Voltage VCES 800 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous — Peak (1) IC ICM 3 8 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 2 4 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 50 0.5 100 TL 260 Operating and Storage Temperature CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C/W C (1) Pulse Test: Pulse Width = 5 ms. Duty Cycle ≤ 10%. This power transistor is specifically designed to sustain the large inrush current during either the start–up conditions or under a short circuit across the load. 2001 – Rev.ON Semiconductor BUH51 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.  Semiconductor Components Industries.4 Watt W/C TJ. LLC.

VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C hFE DC Current Gain (IC = 2 Adc. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 10 8 14 13 — DC Current Gain (IC = 10 mAdc.7 V — DYNAMIC SATURATION VOLTAGE VCE(dsat) ( ) IC = 1 Adc.BUH51 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA.2 Adc VCC = 300 V @ TC = 25°C @ TC = 125°C 6 V IC = 2 Adc.32 0. IB = 0.5 Vdc Collector Cutoff Current (VCE = Rated VCEO.2 — DC Current Gain (IC = 0.8 Adc.2 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) 0.1 V @ TC = 125°C 15 V fT 23 MHz Output Capacitance (VCB = 10 Vdc. VCE = 10 Vdc. f = 1 MHz) Cib 200 500 pF Dynamic Saturation Voltage: Determined 3 µs after rising IB1 reaches 90% of final IB1 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc. IB1 = 0.92 0.5 0. VCE = 5 Vdc) 8 6 10 8 @ TC = 25°C @ TC = 125°C 5 4 7.3 0.8 1. IB1 = 0. IB = 0) ICEO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 1 Adc.com 255 . IB = 0.6 Vdc DC Current Gain (IC = 1 Adc.2 Adc) @ TC = 25°C @ TC = 125°C VCE(sat) 0.5 6.1 Vdc Collector–Emitter Saturation Voltage (IC = 1 Adc. VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 µAdc IEBO 100 µAdc Emitter–Cutoff Current (VEB = 9 Vdc. VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C 14 18 20 25 — 1. f = 1 MHz) Cob 34 100 pF Input Capacitance (VEB = 8 Vdc. L = 25 mH) VCEO(sus) 500 550 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 800 950 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.4 Adc VCC = 300 V @ TC = 25°C 5. VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 µAdc Collector Base Current (VCB = Rated VCBO. IE = 0. f = 1 MHz) http://onsemi.

4 Adc Storage Time Crossover Time TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V hFE .4 Adc IB2 = 0.1 1 0.01 IC.4 4 3. COLLECTOR CURRENT (AMPS) TJ = 125°C 10 TJ = -20°C 1 0.2 Adc Storage Time IC = 2 Adc IB1 = 0.C. Pulse Width = 40 µs) Turn–on Time IC = 1 Adc.75 2.1 4 µs @ TC = 25°C @ TC = 125°C ton 700 1250 1000 ns @ TC = 25°C @ TC = 125°C toff 1. COLLECTOR CURRENT (AMPS) Figure 90. DC Current Gain @ 1 Volt TJ = 25°C 0. VCC = 15 V.4 Adc IB2 = 0.8 2.01 IC.1 2 µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.2 Adc IB2 = 0.5 4.3 2.1 1 0. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tfi 200 320 300 ns @ TC = 25°C @ TC = 125°C tsi 3. DC Current Gain @ 3 Volt http://onsemi.75 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 350 640 500 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 140 300 200 ns @ TC = 25°C @ TC = 125°C tsi 2. ≤ 10%.2 Adc IB2 = 0.2 0 2 Adc VCC = 300 Vdc Turn–off Time Turn–on Time IC = 2 Adc.001 TJ = 25°C 0.BUH51 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D. DC CURRENT GAIN hFE . DC CURRENT GAIN VCE = 1 V TJ = 125°C 10 TJ = -20°C 1 0.001 10 Figure 89.4 0 4 Adc VCC = 300 Vdc Turn–off Time @ TC = 25°C @ TC = 125°C ton 110 125 150 ns @ TC = 25°C @ TC = 125°C toff 3.com 256 10 . IB1 = 0.75 µs @ TC = 25°C @ TC = 125°C tc 400 725 600 ns IC = 1 Adc IB1 = 0. IB1 = 0.

Collector–Emitter Saturation Voltage 10 1.01 1 IC.BUH51 TYPICAL STATIC CHARACTERISTICS 100 10 IC/IB = 5 VCE . COLLECTOR CURRENT (AMPS) 10 Figure 92.1 1 0. VOLTAGE (VOLTS) 10 1 TJ = -20°C 0.1 1 0.01 0. COLLECTOR CURRENT (AMPS) 0 0.01 IC.5 TJ = 25°C TJ = 125°C 0 0. Collector–Emitter Saturation Voltage 0.01 IC. VOLTAGE (VOLTS) IC/IB = 10 VCE .5 TJ = 125°C TJ = 125°C 0. DC Current Gain @ 5 Volt 0. Base–Emitter Saturation Region 1.1 0.001 10 Figure 91.001 0.1 1 IB.1 0.5 VCE(sat) (IC = 500 mA) 0.1 1 0.01 IC.5 2 IC/IB = 10 TJ = 25°C VCE .01 10 Figure 95. COLLECTOR CURRENT (AMPS) Figure 94. DC CURRENT GAIN VCE = 5 V TJ = 125°C 10 TJ = -20°C 1 0. VOLTAGE (VOLTS) TJ = 125°C TJ = 25°C TJ = -20°C 1 TJ = -20°C TJ = 25°C 0.5 3A 2A 1A 1 0. COLLECTOR CURRENT (AMPS) 0 0. COLLECTOR CURRENT (AMPS) 1 TJ = 25°C TJ = -20°C 0. Collector Saturation Region http://onsemi. BASE CURRENT (A) Figure 96.01 IC.5 IC/IB = 5 1 VBE . VOLTAGE (VOLTS) VBE . VOLTAGE (VOLTS) hFE . Base–Emitter Saturation Region 0.001 10 Figure 93.1 0.com 257 10 .1 1 0.001 4A 1.001 TJ = 25°C 0.

Inductive Storage Time. ton 7 IC/IB = 5 1 2 IC. tsi http://onsemi. CAPACITANCE (pF) TJ = 25°C f(test) = 1 MHz 1 10 VR. TIME (s) µ 5 t.5 1 1. COLLECTOR CURRENT (AMPS) Figure 13 Bis. REVERSE VOLTAGE (VOLTS) 100 400 10 Figure 97. Resistive Switching. TIME (s) µ t. Inductive Storage Time.5 IC. COLLECTOR CURRENT (AMPS) 0 3 TJ = 125°C TJ = 25°C 0. TIME (ns) 2000 2 TJ = 125°C TJ = 25°C 0 2 1 IC. Resistive Switch Time. tsi Figure 101. COLLECTOR CURRENT (AMPS) 0 3 TJ = 125°C TJ = 25°C 0 Figure 99. Resistive Breakdown TYPICAL SWITCHING CHARACTERISTICS 2500 10 IB1 = IB2 VCC = 300 V PW = 40 µs IC/IB = 5 8 1500 6 1000 4 500 0 IC/IB = 5 t. Capacitance 100 1000 RBE (Ω) 10000 100000 Figure 98. 25 mH 700 Cob 10 TJ = 25°C 900 BVCER (VOLTS) C. toff 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 10 3 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH t.com 258 2 .BUH51 TYPICAL STATIC CHARACTERISTICS 1000 1000 Cib 800 100 600 BVCER @ 10 mA 500 BVCER(sus) @ 200 mA. TIME (s) µ IB1 = IB2 VCC = 300 V PW = 40 µs 2 3 1 1 TJ = 125°C TJ = 25°C 0 2 1 IC. COLLECTOR CURRENT (AMPS) 3 Figure 100.

5 0. FORCED GAIN 8 9 Figure 106. Inductive Storage Time t c .8 A 3 4 IC = 0.com 259 10 9 10 . TIME (ns) IB1 = IB2 VCC = 15 V VZ = 300 V 600 LC = 200 µH 400 ttfifi 200 0 600 400 tfi 200 TJ = 125°C TJ = 25°C 0. Inductive Storage Time.5 TJ = 125°C TJ = 25°C tfi 1 2 1. COLLECTOR CURRENT (AMPS) Figure 102.5 1 1.5 Figure 103. Inductive Storage Time. TIME (ns) t. tc & tfi @ IC/IB = 10 4 2 tc 5 6 7 hFE. tc & tfi @ IC/IB = 5 450 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 0. STORAGE TIME (µs) 400 3 2.5 IC. FORCED GAIN 300 250 200 150 100 8 0 10 800 3 5 4 6 7 hFE.BUH51 TYPICAL SWITCHING CHARACTERISTICS 1000 800 IB1 = IB2 VCC = 15 V 800 VZ = 300 V LC = 200 µH tc tc t. COLLECTOR CURRENT (AMPS) 0 2.5 2 IC. Inductive Crossover Time http://onsemi. Inductive Fall Time TJ = 125°C TJ = 25°C 700 TJ = 125°C TJ = 25°C IC = 2 A 50 Figure 104.8 A 8 Figure 105. FALL TIME (ns) 350 2 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 6 hFE.8 A IC = 2 A TJ = 125°C TJ = 25°C 1 t fi . CROSSOVER TIME (ns) tsi . FORCED GAIN IC = 2 A 600 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 500 400 300 200 100 IC = 0.

com 260 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 . Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W MTP8P10 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V VCE RB1 Iout A 50 Ω 500 µF 150 Ω 3W IB1 IB IB2 RB2 MJE210 COMMON IC PEAK 100 µF MTP12N10 1 µF -Voff http://onsemi.BUH51 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 9 dyn 1 µs 90% IC IC 8 6 0V tfi tsi 7 dyn 3 µs 10% Vclamp Vclamp 5 10% IC tc 4 90% IB 3 1 µs 2 1 3 µs IB 90% IB1 IB 0 TIME 0 Figure 107. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 108.

TJ(pk) is variable depending on power level. the transistor must not be subjected to greater dissipation than the curves indicate.6 THERMAL DERATING 0.1 0. COLLECTOR CURRENT (AMPS) 100 1 µs 1 ms 1 DC 10 µs 5 ms EXTENDED SOA 0. At any case temperatures. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Reverse Bias Safe Operating Area http://onsemi..com 261 . i. The data of Figure 110 is based on TC = 25°C. 4 10 IC. Second breakdown limitations do not derate the same as thermal limitations.2 0 20 40 100 80 120 60 TC. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation.5 V 300 400 500 600 700 800 VCE. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C.e. COLLECTOR CURRENT (AMPS) IC. Allowable current at the voltages shown on Figure 110 may be found at any case temperature by using the appropriate curve on Figure 109.01 10 100 VCE. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. CASE TEMPERATURE (°C) 140 160 Figure 109. The safe level is specified as a reverse biased safe operating area (Figure 111). Forward Bias Power Derating TJ(pk) may be calculated from the data in Figure 112.8 0.4 0. Forward Bias Safe Operating Area GAIN ≥ 4 TC ≤ 125°C LC = 500 µH 3 2 1 0 -5 V 0V 200 -1.BUH51 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 110. COLLECTOR-EMITTER VOLTAGE (VOLTS) 900 Figure 111.

02 t1 t2 DUTY CYCLE. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0. TIME (ms) Figure 112. D = t1/t2 SINGLE PULSE 0.01 0.2 0.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . Typical Thermal Response (ZθJC(t)) for BUH51 http://onsemi.1 P(pk) 0.05 0.01 0.com 262 100 1000 .BUH51 TYPICAL THERMAL RESPONSE r(t).1 1 RθJC(t) = r(t) RθJC RθJC = 2.TC = P(pk) RθJC(t) 10 t.1 0.

ON Semiconductor BUL146 BUL146F SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state–of–the–art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment.32 Watts W/°C Total Device Dissipation Derate above 25°C (TC = 25°C) Operating and Storage Temperature TJ. These high voltage/high speed transistors offer the following: POWER TRANSISTOR 6. R.0 8.25 62.125 62. 5 Symbol BUL146 BUL146F Unit RθJC RθJA 1. Tstg – 65 to 150 °C BUL146 CASE 221A–09 TO–220AB CASE 221D–02 ISOLATED TO–220 TYPE BUL146F THERMAL CHARACTERISTICS Rating Thermal Resistance – Junction to Case – Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds  Semiconductor Components Industries. is UL Recognized to 3500 VRMS: File # E69369 MAXIMUM RATINGS Rating Symbol BUL146 BUL146F Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9. Case 221D.H.0 RMS Isolation Voltage: (2) (for 1 sec.8 40 0. LLC.0 Vdc IC Adc Adc Collector Current – Continuous – Peak(1) ICM 6.5 3. 2001 June. 2001 – Rev.0 15 Base Current – Continuous – Peak(1) IB IBM 4. TC = 25 C) VISOL1 VISOL2 VISOL3 – – – 4500 3500 1500 Volts PD 100 0.  30%.5 °C/W TL 260 263 °C Publication Order Number: BUL146/D .0 AMPERES 700 VOLTS 40 and 100 WATTS • Improved Efficiency Due to Low Base Drive Requirements: • • • • High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn–Off (No Current Tail) Full Characterization at 125°C Two Packages Choices: Standard TO220 or Isolated TO220 Parametric Distributions are Tight and Consistent Lot–to–Lot BUL146F.

IC = 0) IEBO – – 100 µAdc (1) Pulse Test: Pulse Width = 5.7 0.4 – – VCE(dsat) 1. IB = 0.25 Vdc Collector–Emitter Saturation Voltage (IC = 1.0 – – 0.3 Adc.5 Adc. VCE = 1.13 Adc) Base–Emitter Saturation Voltage (IC = 3.5 0.3 Adc.0 7.0 Vdc) (TC = 125°C) DC Current Gain (IC = 1. ELECTRICAL CHARACTERISTICS – (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 1.0 Adc.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.0 µs (TC = 125°C) – – http://onsemi.0 µs and 3 0 µs respectively after 3. IE = 0.0 µs (TC = 125°C) – – 3. VCE = 5.5 0.6 0 6 Adc VCC = 300 V) 1.0 Adc.5 6.3 Adc.0 7. IB = 0.22 0.0 ms.0 Vdc) (TC = 125°C) DC Current Gain (IC = 10 mAdc.0 µs (TC = 125°C) – – 3.1 1. IB = 0) Collector–Emitter Sustaining Voltage (IC = 100 mA. Duty Cycle ≤ 10%.6 2. VCE = 10 Vdc.0 10 – 30 20 20 13 12 20 34 – – – – – – – Characteristic ON CHARACTERISTICS DC Current Gain (IC = 0.30 0. VEB = 0) (TC = 125°C) ICES – – – – – – 100 500 100 µAdc Emitter Cutoff Current (VEB = 9.0 rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.5 – – 3. VCE = 1.6 Adc) (TC = 125°C) VCE(sat) – – – – 0.5 – – Dynamic y a c Saturation Sa u a o Volto age: Determined 1.BUL146 BUL146F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS VCEO(sus) 400 – – Vdc Collector Cutoff Current (VCE = Rated VCEO.93 1. L = 25 mH) ICEO – – 100 µAdc Collector Cutoff Current (VCE = Rated VCES.com 264 V .0 V) CIB – 1000 1500 pF 2.3 Adc IB1 = 300 mAdc VCC = 300 V) (IC = 3.0 Vdc. VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V.0 MHz) COB – 95 150 pF Input Capacitance (VEB = 8.6 Adc) VBE(sat) – – 0. f = 1.0 Adc IB1 = 0.82 0.30 0. f = 1.20 0.7 Vdc hFE 14 – 12 12 8.0 Vdc) (TC = 125°C) DC Current Gain (IC = 3.5 Adc.13 Adc) (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 3. IB = 0. VCE = 5.0 Adc.0 MHz) fT – 14 – MHz Output Capacitance (VCB = 10 Vdc.0 µs (TC = 125°C) – – 0.75 1. IB = 0.

IB1 = 0.90 2.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3.1 2. IB1 = 0.0 Adc. L = 200 µH) Fall Time (IC = 1. VCC = 15 V.3 Adc.7 2.5 – µs tc – – 200 210 350 – ns tfi – – 85 100 150 – ns tsi – – 1.3 Adc.0 Adc. IB1 = 0. VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.35 1.65 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3. Pulse Width = 20 µs) Turn–On Time (IC = 1.25 2. IB1 = 0.5 – µs tfi – – 115 120 200 – ns tsi – – 1.65 Adc.5 – µs tc – – 175 200 300 – ns tfi 80 – – 210 180 – ns tsi 2.35 1. VCC = 300 V) ton – – 100 90 200 – ns toff – – 1.75 2.5 – µs ton – – 90 100 150 – ns toff – – 1.6 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) http://onsemi.8 – µs tc – – 230 400 350 – ns (TC = 125°C) Turn–Off Time (TC = 125°C) Turn–On Time (IC = 3.com 265 .6 Adc IB2 = 0.13 Adc IB2 = 0.6 Adc IB2 = 1.6 – – 4.BUL146 BUL146F SWITCHING CHARACTERISTICS: Resistive Load (D.5 Adc.75 2.5 3. ≤ 10%.0 Adc. IB1 = 0.13 Adc IB2 = 0.6 Adc IB1 = 1.C.

BUL146 BUL146F TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 25°C TJ = -20°C 10 1 0.com 266 1000 . DC Current Gain @ 5 Volts 2 10 IC = 1 A 1 2A 3A 5A V CE .1 1 10 IC. DC Current Gain @ 1 Volt Figure 2.5 0. Collector–Emitter Saturation Voltage 10000 1.1 1 100 Cob 10 1 10 1 10 100 IC. Collector Saturation Region Figure 4.6 0. Base–Emitter Saturation Region Figure 6. VOLTAGE (V) TJ = 25°C 6A 1 IC/IB = 10 0. DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = -20°C 10 1 0.01 10 0.8 TJ = 25°C 0. VOLTAGE (V) V CE . COLLECTOR CURRENT (AMPS) IC.1 TJ = 25°C TJ = 125°C IC/IB = 5 0 0. BASE CURRENT (mA) TJ = 125°C 0.01 10 10 Figure 3.01 0. COLLECTOR CURRENT (AMPS) VCE.1 1 0.01 IC/IB = 5 IC/IB = 10 0.9 0. VOLTAGE (V) 1 IC COLLECTOR CURRENT (AMPS) 1. COLLECTOR CURRENT (AMPS) Figure 1. CAPACITANCE (pF) 1 V BE . Capacitance http://onsemi. DC CURRENT GAIN h FE .1 VCE = 5 V TJ = 125°C VCE = 1 V h FE .01 1 0.1 IB.1 TJ = 25°C f = 1 MHz Cib 1000 C.2 0.01 0.7 0.4 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.

BUL146 BUL146F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1000

TJ = 125°C

400

TJ = 25°C
6

4

2

0

1500

500

4000

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

4

6

TJ = 25°C
TJ = 125°C

TJ = 25°C
TJ = 125°C

3500

1000

1

2

3000
2500
2000
1500
1000

IC = 1.3 A

500

IC/IB = 10

3
4
6
2
5
IC COLLECTOR CURRENT (AMPS)

7

0

8

4

3

5
hFE, FORCED GAIN

250

200
tfi

t, TIME (ns)

t, TIME (ns)

200

100

0

0

1

2

7

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

tc

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

6

Figure 10. Inductive Storage Time, tsi(hFE)

250

150

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

IC = 3 A

Figure 9. Inductive Storage Time, tsi

50

8

Figure 8. Resistive Switching, toff

1500

0

0

Figure 7. Resistive Switching, ton

IC/IB = 5

500

0

8

IC, COLLECTOR CURRENT (AMPS)

2000

t, TIME (ns)

IC/IB = 10

2000

IC, COLLECTOR CURRENT (AMPS)

2500

0

2500

IB(off) = IC/2
VCC = 300 V
PW = 20 µs

1000

200
0

IC/IB = 5

3000
t, TIME (ns)

600

TJ = 25°C
TJ = 125°C

3500

t si , STORAGE TIME (ns)

t, TIME (ns)

800

4000

IB(off) = IC/2
VCC = 300 V
PW = 20 µs

IC/IB = 5
IC/IB = 10

tc
tfi

150

100
TJ = 25°C
TJ = 125°C
3

4

5

6

7

50

8

TJ = 25°C
TJ = 125°C
0

1

2

3

4

5

6

7

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc and tfi
IC/IB = 5

Figure 12. Inductive Switching, tc and tfi
IC/IB = 10

http://onsemi.com
267

8

BUL146 BUL146F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
250

130
TC , CROSS-OVER TIME (ns)

Tfi , FALL TIME (ns)

IC = 3 A

110
100

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

90
80
70
60

IC = 1.3 A

IC = 1.3 A

120

TJ = 25°C
TJ = 125°C
3

4

6

5

7

200

150

50
8

9

10

11

12

13

14

IC = 3 A

100

15

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

TJ = 25°C
TJ = 125°C
3

4

5

6

7

8

9

10

11

12

13

hFE, FORCED GAIN

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Cross–Over Time

14

15

GUARANTEED SAFE OPERATING AREA INFORMATION

10

7

DC (BUL146)
5 ms

10 µs

1 ms

1 µs

EXTENDED
SOA

1

0.1

0.01
10

100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

SECOND BREAKDOWN
DERATING

0,6
0,4
THERMAL DERATING

0,2
0,0
20

5
4
3

40

60

80

100

120

140

TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

VBE(off)

2

-5 V

1

0V
0

-1, 5 V

600
400
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

800

Figure 16. Reverse Bias Switching Safe Operating Area

1,0
0,8

TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH

6

0

Figure 15. Forward Bias Safe Operating Area

POWER DERATING FACTOR

I C , COLLECTOR CURRENT (AMPS)

I C , COLLECTOR CURRENT (AMPS)

100

160

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC – VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter
junction reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an avalanche mode.

http://onsemi.com
268

BUL146 BUL146F

5
4

10

VCE
dyn 1 µs

3

8

VOLTS

2

tsi

7

dyn 3 µs

1

6
5

0
-1

-4

90% IB1

1

3 µs

0
1

2

3

4
TIME

5

6

7

8

0

Figure 18. Dynamic Saturation Voltage Measurements

1

2

3

4
TIME

5

150 Ω
3W

8

VCE PEAK
MTP8P10

MPF930

MUR105

MPF930

+10 V

7

IC PEAK

100 µF

MTP8P10

100 Ω
3W

6

Figure 19. Inductive Switching Measurements

+15 V
1 µF

10% IC

2

IB

-5
0

tc

10% VCLAMP

IB

3

1 µs

-3

VCLAMP

4

90% IB

-2

90% IC
tfi

IC

9

VCE

RB1

IB1

Iout

IB

A
50 Ω

MJE210

COMMON

150 Ω
3W

500 µF

IB2

RB2
MTP12N10

1 µF

V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA

-Voff

INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1

RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1

Table 1. Inductive Load Switching Drive Circuit

TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)

1
D = 0.5
0.2
0.1

0.1

P(pk)

0.05
0.02

t1

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
0.01

0.1

1

RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)

10
t, TIME (ms)

Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146
http://onsemi.com
269

100

1000

BUL146 BUL146F

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TYPICAL THERMAL RESPONSE

1.00
D = 0.5

0.2
0.10

P(pk)

0.1
0.05

t1

0.02

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
0.01

0.10

1.00

10.00
t, TIME (ms)

Figure 21. Typical Thermal Response for BUL146F

http://onsemi.com
270

RθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)

100.00

1000

BUL146 BUL146F
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP

MOUNTED
FULLY ISOLATED
PACKAGE

MOUNTED
FULLY ISOLATED
PACKAGE

CLIP
LEADS

HEATSINK

MOUNTED
FULLY ISOLATED
PACKAGE

0.107″ MIN

LEADS

LEADS

HEATSINK

HEATSINK

0.107″ MIN

0.110″ MIN
Figure 22a. Screw or Clip Mounting
Position for Isolation Test Number 1

Figure 22b. Clip Mounting Position
for Isolation Test Number 2

Figure 22c. Screw Mounting Position
for Isolation Test Number 3

*Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**
4-40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
HEATSINK

NUT

Figure 23a. Screw–Mounted

Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.

http://onsemi.com
271

ON Semiconductor

BUL147

SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications

POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS

The BUL147 have an applications specific state–of–the–art die
designed for use in electric fluorescent lamp ballasts to 180 Watts and
in Switchmode Power supplies for all types of electronic equipment.
These high–voltage/high–speed transistors offer the following:

• Improved Efficiency Due to Low Base Drive Requirements:


High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Parametric Distributions are Tight and Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220

MAXIMUM RATINGS
Rating

Symbol

BUL147

Unit

Collector–Emitter Sustaining Voltage

VCEO

400

Vdc

Collector–Emitter Breakdown Voltage

VCES

700

Vdc

Emitter–Base Voltage

VEBO

9.0

Vdc

Collector Current — Continuous
— Peak(1)

IC
ICM

8.0
16

Adc

Base Current — Continuous
— Peak(1)

IB
IBM

4.0
8.0

Adc

PD

125
1.0

Watts
W/°C

TJ, Tstg

– 65 to 150

°C

Total Device Dissipation
Derate above 25°C

(TC = 25°C)

Operating and Storage Temperature

BUL147
CASE 221A–09
TO–220AB

THERMAL CHARACTERISTICS
Rating

Symbol

BUL44

Unit

Thermal Resistance — Junction to Case
— Junction to Ambient

RθJC
RθJA

1.0
62.5

°C/W

Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds

TL

260

°C

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 4

272

Publication Order Number:
BUL147/D

BUL147
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS
VCEO(sus)

400

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

ICEO

100

µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
(TC = 125°C)

ICES





100
500
100

µAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)

VBE(sat)

Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)

VCE(sat)


0.82
0.92

1.1
1.25




0.25
0.3
0.35
0.35

0.5
0.5
0.7
0.8

hFE

14

8.0
7.0
10
10


30
12
11
18
20

34




fT

14

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

100

175

pF

Input Capacitance (VEB = 8.0 V)

Cib

1750

2500

pF

(TC = 125°C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125°C)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

Vdc
Vdc

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Dynamic Saturation VoltVolt
age:
Determined 1.0 µs and
3 0 µs respectively after
3.0
rising IB1 reaches 90% of
final IB1
(see Figure 18)

(IC = 2.0 Adc
IB1 = 200 mAdc
VCC = 300 V)
(IC = 5.0 Adc
IB1 = 0.9
0 9 Adc
VCC = 300 V)

1.0
µs

(TC = 125°C)


3.0
5.5


3.0
µs

(TC = 125°C)


0.8
1.4


3.3
8.5


0.4
1.0


VCE(dsat)

1.0
µs

(TC = 125°C)


3.0
µs

(TC = 125°C)


(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

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Volts

BUL147
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time

(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc, VCC = 300 V)

ton


200
190

350

ns

toff


1.0
1.6

2.5

µs

ton


85
100

150

ns

toff


1.5
2.0

2.5

µs

tfi


100
120

180

ns

tsi


1.3
1.9

2.5

µs

tc


210
230

350

ns

tfi


80
100

150

ns

tsi


1.6
2.1

3.2

µs

tc


170
200

300

ns

tfi

60


150

180

ns

tsi

2.6


4.3

3.8

µs

tc


200
330

350

ns

(TC = 125°C)

Turn–Off Time
(TC = 125°C)
Turn–On Time

(IC = 4.5 Adc, IB1 = 0.9 Adc
IB1 = 2.25 Adc, VCC = 300 V)

(TC = 125°C)

Turn–Off Time
(TC = 125°C)

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 2.25 Adc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 0.9 Adc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)

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274

BUL147
TYPICAL STATIC CHARACTERISTICS
100

100
VCE = 1 V

TJ = 25°C
10

TJ = -20°C

1
0.01

1

0.1

VCE = 5 V

TJ = 125°C
h FE , DC CURRENT GAIN

h FE , DC CURRENT GAIN

TJ = 125°C

TJ = 25°C
TJ = -20°C

10

1
0.01

10

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

2

10

1.5

1

IC = 1 A

3A

5A

8A

V CE , VOLTAGE (VOLTS)

V CE , VOLTAGE (VOLTS)

TJ = 25°C

10 A

0.5

1

IC/IB = 10

0.1

IC/IB = 5
0
0.01

0.1
1
IB, BASE CURRENT (AMPS)

0.01
0.01

10

Figure 3. Collector Saturation Region

Cib

1.1

TJ = 25°C
f = 1 MHz

1000

1

C, CAPACITANCE (pF)

V BE , VOLTAGE (VOLTS)

10

10000

1.2

0.9
0.8
TJ = 25°C

0.6

IC/IB = 5
IC/IB = 10

0.5 TJ = 125°C
0.4
0.01

0.1
1
IC COLLECTOR CURRENT (AMPS)

Figure 4. Collector–Emitter Saturation Voltage

1.3

0.7

TJ = 25°C
TJ = 125°C

0.1

1

Cob
100

10

1

10

1

10

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

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275

100

BUL147
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
600
500
400

IC/IB = 5
IC/IB = 10

3000 I /I = 5
C B

TJ = 125°C
TJ = 25°C

300
200

2500
2000
1500
1000

100
0

1

3

2

4

5

1

4

5

6

7

Figure 8. Resistive Switching, toff

IC/IB = 5

4000

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

1500

500

TJ = 25°C
TJ = 125°C

2500

7

IC = 2 A

2000
1500
1000

0

8

IC = 4.5 A
3

Figure 9. Inductive Storage Time, tsi

4

5

6

7

8
9 10 11
hFE, FORCED GAIN

12

250
tc

200

t, TIME (ns)

tfi

150
100

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

50
1

2

4

5

6

15

150
100
50

TJ = 25°C
TJ = 125°C
3

14

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

TJ = 25°C
TJ = 125°C
tc

200

13

Figure 10. Inductive Storage Time, tsi(hFE)

300
250

8

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

3000

500

IC/IB = 10

3
4
6
5
IC COLLECTOR CURRENT (AMPS)

2

TJ = 25°C
TJ = 125°C

3500

1000

t, TIME (ns)

3

Figure 7. Resistive Switching, ton

2000

0

2

IC, COLLECTOR CURRENT (AMPS)

2500

1

0

8

IC, COLLECTOR CURRENT (AMPS)

3000

t, TIME (ns)

7

6

3500

0

IC/IB = 10

500

t si , STORAGE TIME (ns)

0

IB(off) = IC/2
VCC = 300 V
PW = 20 µs

TJ = 25°C
TJ = 125°C

3500

t, TIME (ns)

t, TIME (ns)

4000

IB(off) = IC/2
VCC = 300 V
PW = 20 µs

7

0

tfi
1

2

3

4

5

6

7

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc and tfi
IC/IB = 5

Figure 12. Inductive Switching, tc and tfi
IC/IB = 10

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8

BUL147
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)

t fi , FALL TIME (ns)

160

IC = 2 A

140

300

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

TJ = 25°C
TJ = 125°C

120
100
80
60

IC = 4.5 A
3

4

5

6

7

8

9

10

11

12

13

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH

IC = 2 A
TC , CROSSOVER TIME (ns)

180

200
150
IC = 4.5 A

100
50

15

14

250

TJ = 25°C
TJ = 125°C
3

4

5

6

7

8

9

10

11

12

13

14

hFE, FORCED GAIN

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

15

GUARANTEED SAFE OPERATING AREA INFORMATION
9

DC (BUL147)
5 ms

10 µs

1 ms

1 µs

10
EXTENDED
SOA

1

0.1

0.01
10

100

I C , COLLECTOR CURRENT (AMPS)

I C , COLLECTOR CURRENT (AMPS)

100

7
6
5
4
3

-5 V

2
1
0

1000

TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH

8

VBE(off) = 0 V
0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

POWER DERATING FACTOR

1.0
SECOND BREAKDOWN
DERATING

0.6
0.4
THERMAL DERATING

0.2
0.0
20

40

60

80

100

120

200

300

400

-1, 5 V
500

600

700

800

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

0.8

100

140

TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC – VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles
to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17. TJ(pk) may
be calculated from the data in Figure 20 and NO TAG. At any case
temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sus160 tained simultaneously during turn–off with the base–to–emitter
junction reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an avalanche mode.

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BUL147

5
4

10

VCE
dyn 1 µs

3

8

VOLTS

2

tsi

7

dyn 3 µs

1

6
5

0
-1

-4

90% IB1

1

3 µs

0
1

2

3

4
TIME

5

6

7

0

8

Figure 18. Dynamic Saturation Voltage Measurements

1

2

3

4
TIME

5

150 Ω
3W

8

VCE PEAK
MTP8P10

MPF930

MUR105

MPF930

+10 V

7

IC PEAK

100 µF

MTP8P10

100 Ω
3W

6

Figure 19. Inductive Switching Measurements

+15 V
1 µF

10% IC

2

IB

-5
0

tc

10% VCLAMP

IB

3

1 µs

-3

VCLAMP

4

90% IB

-2

90% IC
tfi

IC

9

VCE

RB1

IB1

Iout

IB

A
50 Ω

MJE210
150 Ω
3W

500 µF

IB2

RB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA

MTP12N10

1 µF
-Voff
COMMON

INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1

RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1

Table 1. Inductive Load Switching Drive Circuit

TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)

1
D = 0.5
0.2
0.1

0.1

P(pk)

0.05
0.02

t1

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
0.01

0.1

1

t, TIME (ms)

RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)

10

Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147
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278

100

1000

ON Semiconductor

BUL44

SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications

POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS

The BUL44 have an applications specific state–of–the–art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts. These high voltage/high speed transistors
offer the following:

• Improved Efficiency Due to Low Base Drive Requirements:


High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125°C
Tight Parametric Distributions are Consistent Lot–to–Lot

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage

VCEO

400

Vdc

Collector–Emitter Breakdown Voltage

VCES

700

Vdc

Emitter–Base Voltage

VEBO

9.0

Vdc

Collector Current — Continuous
— Peak(1)

IC
ICM

2.0
5.0

Adc

Base Current — Continuous
— Peak(1)

IB
IBM

1.0
2.0

Adc

PD

50
0.4

Watts
W/°C

TJ, Tstg

– 65 to 150

°C

Total Device Dissipation
Derate above 25°C

(TC = 25°C)

Operating and Storage Temperature

BUL44
CASE 221A–06
TO–220AB

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance — Junction to Case
— Junction to Ambient

Rating

RθJC
RθJA

2.5
62.5

°C/W

Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds

TL

260

°C

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 4

279

Publication Order Number:
BUL44/D

BUL44
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

VCEO(sus)

400

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

100

µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0)

ICES





100
500
100

µAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)

VBE(sat)


0.85
0.92

1.1
1.25

Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)

VCE(sat)



0.20
0.20
0.25
0.25

0.5
0.5
0.6
0.6

14

12
12
8.0
7.0
10


32
20
20
14
13
22

34





fT

13

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

COB

38

60

pF

Input Capacitance (VEB = 8.0 V)

CIB

380

600

pF

(TC = 125°C)
(IC = 1.0 Adc, IB = 0.2 Adc)
(TC = 125°C)
DC Current Gain
(IC = 0.2 Adc, VCE = 5.0 Vdc)

Vdc

hFE
(TC = 125°C)

(IC = 0.4 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
(IC = 10 mAdc, VCE = 5.0 Vdc)

Vdc

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Dynamic Saturation VoltVolt
age:
Determined 1.0 µs and
3.0 µs respectively after
rising IB1 reaches 90% of
final IB1

(IC = 0.4 Adc
IB1 = 40 mAdc
VCC = 300 V)
(IC = 1.0 Adc
IB1 = 0.2
0 2 Adc
VCC = 300 V)

1.0
µs

(TC = 125°C)


2.5
2.7


3.0
µs

(TC = 125°C)


1.3
1.15


1.0
µs

(TC = 125°C)


3.2
7.5


3.0
µs

(TC = 125°C)


1.25
1.6


VCE(dsat)

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

Vdc

(continued)

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280

BUL44
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
Turn–Off Time
Turn–On Time
Turn–Off Time

(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

(IC = 1.0 Adc, IB1 = 0.2 Adc
IB1 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

(IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

ton


40
40

100

ns

toff


1.5
2.0

2.5

µs

ton


85
85

150

ns

toff


1.75
2.10

2.5

µs

tfi


125
120

200

ns

tsi


0.7
0.8

1.25

µs

tc


110
110

200

ns

tfi


110
120

175

ns

tsi


1.7
2.25

2.75

µs

tc


180
210

300

ns

tfi

70


180

170

ns

tsi

2.6


4.2

3.8

µs

tc


190
350

300

ns

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time

(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time

(IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time

(IC = 0.8 Adc, IB1 = 160 mAdc
IB2 = 160 mAdc)

(TC = 125°C)

Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)

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DC CURRENT GAIN hFE.com 282 100 . COLLECTOR CURRENT (AMPS) 10 Figure 22.01 0.7 IC/IB = 5 TJ = 25°C TJ = 125°C IC = 0.0 C.01 1.0 IC.1 1.9 0.1 10 100 IB. CAPACITANCE (pF) VBE .0 IC.BUL44 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V VCE = 5 V TJ = 125°C hFE. VOLTAGE (VOLTS) 10 1000 1.8 TJ = 25°C 0.01 1000 CIB 1.0 IC.0 0.0 0.1 1. Collector–Emitter Saturation Voltage 1.0 1.0 0.1 10 1.0 1. VOLTAGE (VOLTS) VCE .0 Figure 24.01 10 Figure 21. Collector Saturation Region 0.0 10 VCE . Capacitance 0.01 0.2 0.1 IC.4 0.5 A 0. DC Current Gain at 1 Volt TJ = -20°C 0. DC CURRENT GAIN TJ = 125°C TJ = 25°C 10 1.5 0. BASE CURRENT (mA) 0.6 0.4 A 2A 1A 1.0 http://onsemi.1 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 25. Base–Emitter Saturation Region Figure 26.0 IC/IB = 10 TJ = 125°C IC/IB = 5 IC/IB = 10 TJ = 25°C f = 1 MHz 100 COB 10 1. COLLECTOR CURRENT (AMPS) Figure 23.2 A 0 1. DC Current Gain at 5 Volts 2. VOLTAGE (VOLTS) TJ = 25°C 1. COLLECTOR CURRENT (AMPS) 10 VCE. COLLECTOR CURRENT (AMPS) TJ = 25°C 10 1.

4 A IC/IB = 10 250 50 TJ = 25°C TJ = 125°C 1.0 IC.4 2. TIME (ns) 6.8 IC = 0.6 IC. tc and tfi IC/IB = 5 tc tfi 100 1.0 1.0 IC/IB = 10 t.0 IC. COLLECTOR CURRENT (AMPS) 1.8 2.6 IC. TIME (s) µ 250 6.2 1. toff t si .0 tfi 100 9.0 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 25°C TJ = 125°C 0. Inductive Storage Time tc 0. COLLECTOR CURRENT (AMPS) Figure 32.4 Figure 27.com 283 2.0 TJ = 25°C TJ = 125°C 0. STORAGE TIME (µs) 2500 200 IB(off) = IC/2 VCC = 300 V PW = 20 µs IC/IB = 5 4.2 1. Inductive Switching.2 1.4 Figure 31.4 15 .6 0.8 0 0.0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH t.2 1.4 2. ton IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 5 t. TIME (ns) 2000 1500 1000 500 TJ = 25°C TJ = 125°C 0 0.8 1.8 1.BUL44 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 300 5.0 1.2 1.6 2.4 1. Inductive Switching.0 50 0 0.8 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1.6 2.8 1. COLLECTOR CURRENT (AMPS) Figure 28.6 2. Resistive Switching. TIME (ns) t.4 1. tsi 150 0.6 0.0 10 11 12 hFE.0 2.5 5.4 0.0 2. TIME (ns) 200 150 IC/IB = 5 100 TJ = 25°C TJ = 125°C 3.0 150 0 0.4 7.4 0.0 Figure 30.0 IC/IB = 10 0.2 2. COLLECTOR CURRENT (AMPS) 8.0 IC = 1 A 200 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1. Resistive Switching. Inductive Storage Time.2 1. COLLECTOR CURRENT (AMPS) 0.5 Figure 29.0 t.0 1. FORCED GAIN 13 14 TJ = 25°C TJ = 125°C 50 0.0 IC. tc and tfi IC/IB = 10 http://onsemi.

0 hFE. FORCED GAIN 12 13 14 50 5.com 284 .0 2.8 1.5 1µs IC. high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. the transistor must not be subjected to greater dissipation than the curves indicate.0 6. Second breakdown limitations do not derate the same as thermal limitations. COLLECTOR CURRENT (AMPS) 10 Extended SOA 0. The safe level is specified as a reverse–biased safe operating area (Figure 36). i. Reverse Bias Switching Safe Operating Area 1.5 0V 0 -1. Forward Bias Safe Operating Area POWER DERATING FACTOR 0.1 0.5 0 1000 TC ≤ 125°C GAIN ≥ 4 LC = 500 µH 2. SECOND BREAKDOWN DERATING 0. TJ(PK) is variable depending on power level.4 1.6 THERMAL DERATING 0.0 hFE. At any case temperatures. The data of figure 35 is based on TC = 25°C.4 A 130 120 110 IC = 1 A 100 80 5. CROSSOVER TIME (ns) 160 6.5 V 100 200 300 400 500 600 VCE.. TJ(PK) may be calculated from the data in figure 40. FORCED GAIN 12 13 14 15 Figure 34. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.0 10 11 9. CASE TEMPERATURE (°C) 140 -5 V 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 700 limits of the transistor that must be observed for reliable operation. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 35.01 10 100 VCE. Inductive Crossover Time Figure 33.0 16 Figure 37. COLLECTOR CURRENT (AMPS) IC. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C.0 8.0 15 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 1 A 170 t c .BUL44 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 190 170 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH t fi . Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE http://onsemi. Allowable current at the voltages shown on figure 35 may be found at any case temperature by using the appropriate curve on figure 37.0 Figure 36. Inductive Fall Time GUARANTEED SAFE OPERATING AREA INFORMATION 10µs DC (BUL44) 5ms 1ms 50µs 1.4 A 110 90 TJ = 25°C TJ = 125°C 70 TJ = 25°C TJ = 125°C 90 10 11 9. FALL TIME (ns) 150 140 IC = 0.0 150 130 IC = 0.0 0. For inductive loads. thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.0 7.0 8.2 0 20 40 60 80 100 120 TC.0 7.e.

02 t1 SINGLE PULSE t2 DUTY CYCLE. Typical Thermal Response (ZθJC(t)) for BUL44 http://onsemi. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 150 Ω 3W 8 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V 7 IC PEAK 100 µF MTP8P10 100 Ω 3W 6 Figure 39. Inductive Switching Measurements +15 V 1 µF 10% IC 2 IB 1 tc 10% VCLAMP IB 3 1 µs -3 VCLAMP 4 90% IB -2 -4 tsi 7 dyn 3 µs 1 90% IC tfi IC 9 VCE RB1 IB1 Iout IB A 50 Ω MJE210 COMMON 150 Ω 3W 500 µF IB2 RB2 MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1.0 10 t.TC = P(pk) RθJC1(t) P(pk) 0.05 0.2 0.0 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.com 285 100 1000 . D = t1/t2 0.1 0.BUL44 5 4 10 VCE dyn 1 µs 3 8 VOLTS 2 6 5 0 -1 -5 0 90% IB1 1 3 µs 0 2 3 4 TIME 5 6 7 8 0 Figure 38.5 0.1 1.01 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . TIME (ms) Figure 40.01 0.01 0.01 0. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1.

2001 – Rev. 2001 March.ON Semiconductor High Speed. Main features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the • • • H2BIP Structure which Minimizes the Spread Integrated Collector–Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCE(sat) “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC application. Duty Cycle ≤ 10%. 2 286 Publication Order Number: BUL45D2/D . there is no need to guarantee an hFE window.5 TL 260 Operating and Storage Temperature THERMAL CHARACTERISTICS C/W Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds C (1) Pulse Test: Pulse Width = 5 ms. Tstg –65 to 150 C RθJC RθJA 1.6 Watt W/C TJ. Therefore.  Semiconductor Components Industries. High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.65 62. High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network BUL45D2 POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). CASE 221A–09 TO–220AB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 12 Vdc IC Adc Collector Current — Continuous — Peak (1) ICM 5 10 Base Current — Continuous Base Current — Peak (1) IB IBM 2 4 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 75 0. LLC.

4 0.7 1 0.5 0. VCE = 1 Vdc) VCE(sat) Vdc hFE @ TC = 25°C @ TC = 125°C 22 20 34 29 @ TC = 25°C @ TC = 125°C 10 7 14 9.4 Adc) @ TC = 25°C @ TC = 125°C 0.5 (IEC = 2 Adc) @ TC = 25°C @ TC = 125°C 1. IB = 40 mAdc) @ TC = 25°C @ TC = 125°C 0. di/dt = 10 A/µs) Tfr 330 @ TC = 25°C (IF = 2 Adc.9 @ TC = 25°C @ TC = 125°C 0.BUL45D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA. VCE = 1 Vdc) (IC = 2 Adc.75 1 (IC = 2 Adc.28 0.5 (IC = 2 Adc.62 0.32 0. VEB = 0) Collector Cutoff Current (VCE = 500 V.5 — DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1 Adc) VEC V @ TC = 25°C @ TC = 125°C 1.62 1.4 Adc) @ TC = 25°C @ TC = 125°C 0.2 1.6 (IEC = 0.85 0.04 0. di/dt = 10 A/µs) @ TC = 25°C 360 (IF = 0.8 Adc. VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C Emitter–Cutoff Current (VEB = 10 Vdc.8 Adc.1 Vdc Collector Cutoff Current (VCE = Rated VCEO. IB = 80 mAdc) DC Current Gain (IC = 0.8 Adc.4 Adc) Collector–Emitter Saturation Voltage (IC = 0. L = 25 mH) VCEO(sus) 400 450 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 910 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14.4 Adc. di/dt = 10 A/µs) @ TC = 25°C 320 http://onsemi.79 1 0. IB = 0) ICEO 100 µAdc ICES 100 500 100 µAdc IEBO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES. IB = 80 mAdc) VBE(sat) Vdc @ TC = 25°C @ TC = 125°C 0.46 0. IB = 0.7 1.8 0. IB = 0.com 287 ns .9 @ TC = 25°C @ TC = 125°C 0.32 0.38 0.8 Adc.6 (IC = 0.2 Forward Recovery Time (see Figure 27) (IF = 1 Adc.89 0. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.

L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tf 90 93 150 ns @ TC = 25°C @ TC = 125°C ts 0.25 µs @ TC = 25°C @ TC = 125°C tc 300 ns Storage Time Storage Time Crossover Time IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc IC = 2 Adc IB1 = 0.5 1.9 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 95 95 150 ns Fall Time @ TC = 25°C @ TC = 125°C tf 80 105 150 ns @ TC = 25°C @ TC = 125°C ts 2.5 V SWITCHING CHARACTERISTICS: Resistive Load (D.05 0.4 µs 2. f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc.7 9. Pulse Width = 20 µs) Turn–on Time Turn–off Time IC = 2 Adc.7 V @ 1 µs @ TC = 25°C @ TC = 125°C 3. VCC = 15 V.1 3.4 Adc IB2 = 0.4 0 4 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 90 105 150 ns @ TC = 25°C @ TC = 125°C toff 1. IB1 = 0.3 µs @ TC = 25°C @ TC = 125°C ton 90 110 150 ns @ TC = 25°C @ TC = 125°C toff 2.95 2.BUL45D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.15 1.C.35 2.4 V DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 IC = 1 A IB1 = 100 mA VCC = 300 V IC = 2 A IB1 = 0 0.72 1.4 1. IE = 0. IB1 = 0. ≤ 10%.4 Adc http://onsemi.9 12 V @ 3 µs @ TC = 25°C @ TC = 125°C 0.9 225 450 . VCE = 10 Vdc.4 Adc IB2 = 0.8 8A VCC = 300 V @ 1 µs @ TC = 25°C @ TC = 125°C @ 3 µs @ TC = 25°C @ TC = 125°C 0. f = 1 MHz) Cob 50 75 pF Input Capacitance (VEB = 8 Vdc) Cib 340 500 pF VCE(dsat) 3.1 SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.com 288 1.5 Adc.4 Adc IB2 = 1 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 2 Adc.

001 10 TJ = 125°C 80 1 TJ = -20°C 1 TJ = -20°C TJ = 25°C TJ = 125°C TJ = 125°C TJ = 25°C 0. COLLECTOR CURRENT (AMPS) 10 Figure 42.1 1 IB. BASE CURRENT (AMPS) 0. VOLTAGE (VOLTS) IC/IB = 10 VCE . DC CURRENT GAIN hFE . COLLECTOR CURRENT (AMPS) 40 0.01 0.001 0.1 0.com 289 10 .BUL45D2 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V TJ = 125°C 60 TJ = 25°C 40 TJ = -20°C hFE .1 1 IC.001 10 Figure 45. VOLTAGE (VOLTS) VCE . Collector–Emitter Saturation Voltage 0.01 0.1 0. VOLTAGE (VOLTS) TJ = 25°C 60 0 0. COLLECTOR CURRENT (AMPS) Figure 46.01 1A 2A 3A 4A TJ = 25°C 1 TJ = 125°C TJ = -20°C 0.001 0.1 1 IC. Collector–Emitter Saturation Voltage http://onsemi.01 0.001 10 Figure 43.001 0. Collector Saturation Region 0.01 0. VOLTAGE (VOLTS) TJ = -20°C 20 Figure 41. DC Current Gain @ 1 Volt 2 5A 1 IC = 500 mA 0 0.1 1 IC.01 0.1 1 IC. DC CURRENT GAIN VCE = 1 V 80 20 0 0. DC Current Gain @ 5 Volt 4 10 TJ = 25°C IC/IB = 5 3 VCE . COLLECTOR CURRENT (AMPS) 0. COLLECTOR CURRENT (AMPS) 10 Figure 44. Collector–Emitter Saturation Voltage 10 10 IC/IB = 20 VCE .1 0.1 1 IC.

1 IC. Capacitance 100 RBE (Ω) Figure 52.001 10 Figure 47. REVERSE VOLTAGE (VOLTS) 700 600 400 100 BVCER(sus) @ 200 mA 10 Figure 51. COLLECTOR CURRENT (AMPS) 25°C 1 Figure 49.01 0. Base–Emitter Saturation Region 10 Cob (pF) 10 1 10 VR. Base–Emitter Saturation Region 1 0.1 0. Forward Diode Voltage 1000 1000 Cib (pF) TJ = 25°C f(test) = 1 MHz BVCER @ 10 mA 900 100 BVCER (VOLTS) C.1 0.BUL45D2 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 VBE . COLLECTOR CURRENT (AMPS) 0. BVCER = f(ICER) http://onsemi.1 1 IC.1 0. COLLECTOR CURRENT (AMPS) 1000 .1 0. VOLTAGE (VOLTS) IC/IB = 20 TJ = -20°C 1 TJ = 125°C TJ = 25°C 0.com 290 TJ = 25°C 800 500 1 0.01 10 0.01 0. VOLTAGE (VOLTS) VBE .01 0.1 1 IC. CAPACITANCE (pF) 10 Figure 48.001 125°C 0.001 1 TJ = -20°C TJ = 125°C TJ = 25°C 1 0. Base–Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) VBE .1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 50. VOLTAGE (VOLTS) IC/IB = 5 TJ = 25°C TJ = -20°C 1 TJ = 125°C 0.

Inductive Storage Time. TIME (s) µ 3 t. COLLECTOR CURRENT (AMPS) 0 4 0 Figure 57. TIME (s) µ IBon = IBoff VCC = 300 V PW = 20 µs 300 200 200 100 100 0 TJ = 125°C TJ = 25°C tfi 0 1 3 2 IC. Inductive Switching.5 3 1.5 3 3.5 Figure 54.BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 5 1000 t. Inductive Storage Time. TIME (ns) 800 TJ = 125°C TJ = 25°C 600 IC/IB = 10 400 IC/IB = 5 0 0. COLLECTOR CURRENT (AMPS) Figure 56. COLLECTOR CURRENT (AMPS) 3 2 3. ton 0 IC/IB = 5 TJ = 125°C TJ = 25°C 1 200 IBon = IBoff VCC = 300 V PW = 20 µs IC/IB = 10 4 t. tsi @ IC/IB = 10 Figure 55. COLLECTOR CURRENT (AMPS) 0 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 4 t.com 291 4 . tfi @ IC/IB = 10 http://onsemi.5 0 4 0.5 2 2. COLLECTOR CURRENT (AMPS) Figure 53. TIME (s) µ 1.5 4 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 5 2 1 3 2 1 TJ = 125°C TJ = 25°C 0 2 1 3 IC. toff 4 4 TJ = 125°C TJ = 25°C 0 600 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 500 4 400 TJ = 125°C TJ = 25°C IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 300 tc t. tsi @ IC/IB = 5 t. TIME (ns) 400 1 3 2 IC. Resistive Switch Time. COLLECTOR CURRENT (AMPS) Figure 58. Resistive Switch Time. tc & tfi @ IC/IB = 5 1 2 3 IC. Inductive Switching.5 IC.5 1 2 2. TIME (ns) 1 IC.

Inductive Crossover Time 3000 IB = 50 mA IB = 100 mA IB = 200 mA IB = 500 mA 0 0. FORCED GAIN 16 18 1000 600 400 0 20 IC = 1 A 2 6 8 10 12 14 hFE. TIME (ns) 4 Figure 62. Inductive Fall Time 1000 TJ = 125°C TJ = 25°C 200 IC = 2 A 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1200 t c . tc @ IC/IB = 10 1400 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH TJ = 125°C TJ = 25°C IC = 1 A 250 150 4 6 8 10 12 14 hFE. COLLECTOR CURRENT (AMPS) 2 4 0 5 Figure 59.com 292 2 . FORWARD CURRENT (AMP) Figure 64. Inductive Storage Time 450 50 10 hFE. FALL TIME (ns) 20 15 Figure 60. CROSSOVER TIME (ns) 350 t fi .5 1 1. Inductive Storage Time. COLLECTOR CURRENT (AMPS) 3. TIME (ns) 1000 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C t si . STORAGE TIME (µs) IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 500 IC = 1 A 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 3 IC = 2 A 0 0 2 1 3 IC.5 IF. FORCED GAIN 16 18 20 360 2000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH t fr . Forward Recovery Time tfr http://onsemi.BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 1500 5 t.5 dI/dt = 10 A/µs TC = 25°C 340 320 300 4 0 Figure 63. FORWARD RECOVERY TIME (ns) IB1 = IB2 t.5 2 2. tsi 0. FORCED GAIN 1 IB = 1 A 3 1.5 IC = 2 A 800 Figure 61.5 IC. Inductive Switching.

1 VF 0 IF 10% IF 0 2 4 TIME 5 6 7 Figure 66. Inductive Switching Measurements VFRM VF 1 6 4 Figure 67.1 VF unless otherwise specified) VF tfr 0. tfr Measurements http://onsemi. Dynamic Saturation Voltage Measurements 2 3 VFR (1.BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 9 dyn 1 µs IC 90% IC 8 dyn 3 µs tfi tsi 7 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 µs 2 IB 90% IB1 1 3 µs 0 TIME 0 Figure 65.com 293 8 10 8 .

Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W VCE PEAK MTP8P10 MPF930 VCE RB1 MUR105 MPF930 +10 V IB1 Iout IB A 50 Ω MTP12N10 150 Ω 3W 500 µF IB2 RB2 MJE210 COMMON IC PEAK 100 µF MTP8P10 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA 1 µF -Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL CHARACTERISTICS 1 µs 10 10 µs 5 ms 1 DC 0. COLLECTOR CURRENT (AMPS) 6 10 1 ms EXTENDED SOA IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 68. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 69.BUL45D2 TYPICAL SWITCHING CHARACTERISTICS Table 1.com 294 800 . COLLECTOR CURRENT (AMPS) 100 100 VCE. Reverse Bias Safe Operating Area http://onsemi.01 IC.1 0.5 V 300 400 500 600 700 VCE. Forward Bias Safe Operating Area TC ≤ 125°C GAIN ≥ 5 LC = 2 mH 5 4 3 2 -5 V 1 0 0V 200 -1.

com 295 100 1000 . i.1 0.4 0. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation.BUL45D2 TYPICAL CHARACTERISTICS POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.. D = t1/t2 SINGLE PULSE 0.TC = P(pk) RθJC(t) 10 t. TJ(pk) may be calculated from the data in Figure 71. TIME (ms) Figure 71. The data of Figure 68 is based on TC = 25°C. CASE TEMPERATURE (°C) 40 160 140 Figure 70. TJ(pk) is variable depending on power level. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased.01 0.8 0.01 0. At any case temperatures. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. the transistor must not be subjected to greater dissipation than the curves indicate. Second breakdown limitations do not derate the same as thermal limitations.6 THERMAL DERATING 0.05 0.1 P(pk) 0.e. The safe level is specified as a reverse biased safe operating area (Figure 69). TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Typical Thermal Response (ZθJC(t)) for BUL45D2 http://onsemi. For inductive loads. TYPICAL THERMAL RESPONSE r(t).5 0.2 0 20 100 80 120 60 TC.2 0. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.02 t1 t2 DUTY CYCLE. Allowable current at the voltages shown on Figure 68 may be found at any case temperature by using the appropriate curve on Figure 70.1 1 RθJC(t) = r(t) RθJC RθJC = 2.

IC = 0) (1) Pulse Test: Pulse Width = 5.0 Vdc. Main features include: POWER TRANSISTOR 5.0 A.0 10 Adc IB 2.4 A Full Characterization at 125°C Tight Parametric Distributions Consistent Lot–to–Lot MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9. L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO.  Semiconductor Components Industries. 2001 May. 2001 – Rev. Duty Cycle ≤ 10%.2 µs (typ) @ IC = 2.ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts.0 ms.65 62. VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 AMPERES 700 VOLTS 35 and 75 WATTS • Improved Efficiency Due to: • • Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On–State and Switching Operations) Fast Switching: tfi = 100 ns (typ) and tsi = 3. Tstg – 65 to 150 °C Symbol Max Unit RθJC RθJA 1. IB = 0) Collector Cutoff Current (VCE = Rated VCES. 5 296 Publication Order Number: BUL45/D .6 Watts W/°C TJ.0 Adc PD 75 0. LLC.5 °C/W Collector Current — Continuous — Peak(1) Base Current Total Device Dissipation Derate above 25°C (TC = 25°C) Operating and Storage Temperature BUL45 CASE 221A–06 TO–220AB THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction to Case — Junction to Ambient ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc ICEO — — 100 µAdc ICES — — — — 10 100 µAdc IEBO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA.0 Vdc IC ICM 5. IB1 = IB2 = 0.

IB = 0.0 10 — 32 14 12 22 34 — — — — — Characteristic ON CHARACTERISTICS (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 2.0 Adc.4 — hFE 14 — 7.0 Vdc) Cib — 920 1200 pF Dynamic Saturation Voltage: Determined 1.5 1.89 1. VCE = 10 Vdc. IB = 0.0 MHz) fT — 12 — MHz Output Capacitance (VCB = 10 Vdc.175 0.com 297 Vdc .75 4.25 Vdc Collector–Emitter Saturation Voltage (IC = 1.25 — — — 0.85 6.5 1. IB = 0.0 µs (TC = 125°C) — — 0.0 5.275 0.0 Vdc) (TC = 125°C) DC Current Gain (IC = 10 mAdc.BUL45 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 1. f = 1.0 — — VCE (Dyn sat) 1. VCE = 1.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0. VCE = 5.150 0.0 — — 0.4 Adc) Vdc VCE(sat) (TC = 125°C) DC Current Gain (IC = 0.0 — — 1.0 µs respectively res ectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.4 Adc) VBE(sat) — — 0.25 0.2 Adc) (IC = 2. VCE = 5. IB = 0.0 MHz) Cob — 50 75 pF Input Capacitance (VEB = 8.0 Vdc) (TC = 125°C) DC Current Gain (IC = 2.2 1.2 Adc) VCE(sat) — — 0.84 0.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc.0 µs (TC = 125°C) — — 3.5 Adc.0 Adc.0 µs and 3. f = 1.4 — — 3. IE = 0.3 Adc.0 µs (TC = 125°C) — — http://onsemi.0 Adc.0 µs (TC = 125°C) — — 1.0 Adc.

8 3.4 Adc Pulse Width = 20 µs.5 3.9 µs tc — 175 300 ns (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 1.6 0. (TC = 125°C) Duty Cycle < 20% VCC = 300 V) (TC = 125°C) ton — — 75 120 110 — ns toff — — 2. IB1 = IB2 = 0.7 — µs tc — — 170 170 250 — ns tfi — 80 120 ns tsi — 0.0 Adc.BUL45 SWITCHING CHARACTERISTICS: Resistive Load Turn–On Time Turn–Off Time (IC = 2.6 — — 4.com 298 .5 — µs SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc. IB1 = 100 mAdc IB2 = 0. LC = 200 µH.5 1.4 Adc IB2 = 0.2 3.0 Adc.0 Adc.4 Adc) tfi 70 — — 200 170 — ns tsi 2.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 2. Vclamp = 300 Vdc) Fall Time (IC = 2. IB1 = 250 mAdc IB2 = 2.0 Adc.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) http://onsemi. IB1 = 0.1 1.8 — µs tc — — 230 400 350 — ns tfi — — 110 100 150 — ns tsi — — 1.

10 1.00 IC.10 1.5 2A A 1. BASE CURRENT (AMPS) IC.0 3A 4A 5A 6A 0.0 VCE . COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5.0 IC/IB = 10 0.00 1 1 10 100 IC.00 0.00 IC.01 TJ = 25°C f = 1 MHz 0.01 VCE = 5 V TJ = 25°C 0.00 IB. COLLECTOR CURRENT (AMPS) Figure 1. COLLECTOR CURRENT (AMPS) 2.5 1 A 1.10 1.00 0. VOLTAGE (VOLTS) hFE .5 0.BUL45 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V TJ = 25°C hFE .00 10. VOLTAGE (VOLTS) TJ = -20°C 10 1 0. CAPACITANCE (pF) VBE . COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. DC CURRENT GAIN TJ = 125°C 1 0.4 0. VOLTAGE (VOLTS) 10.com 299 1000 .1 TJ = 25°C TJ = 125°C IC/IB = 5 IC = 0. Capacitance http://onsemi.10 0.00 VCE .5 A 0 0.01 10. DC CURRENT GAIN TJ = 125°C TJ = -20°C 10 1. Collector–Emitter Saturation Voltage 1.5 1.00 0.1 10000 1. Base–Emitter Saturation Region Figure 6.01 10.01 0.0 0.6 TJ = 25°C TJ = 125°C Cib 1000 Cob 100 10 IC/IB = 10 IC/IB = 5 0.01 0.8 0. DC Current Gain @ 1 Volt Figure 2.7 0. DC Current Gain at @ 5 Volts 10 TJ = 25°C 1.9 C.00 10.10 1. COLLECTOR CURRENT (AMPS) VCE.

BUL45 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1200 1000 TJ = 25°C TJ = 125°C 800 2000 IC/IB = 10 600 400 0 1 2 3 5 4 7 6 0 8 0 1 2 3 4 5 6 IC. STORAGE TIME (ns) IC/IB = 5 500 7 IC. TIME (ns) 1500 500 IC/IB = 5 3500 0 IC/IB = 10 1000 200 0 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 25°C TJ = 125°C IC/IB = 5 2500 t. IC/IB = 5 Figure 12. tc & tfi. Inductive Storage Time. COLLECTOR CURRENT (AMPS) IC. Resistive Switching. tsi(hFE) 300 15 200 250 tc tc 150 t. Inductive Switching. TIME (ns) 3000 IB(off) = IC/2 VCC = 300 V PW = 20 µs IC = 1 A 2000 1500 1000 IC/IB = 10 3 2 4 500 5 IC = 2 A 3 4 5 6 7 8 9 10 11 13 12 14 IC. TIME (ns) t. COLLECTOR CURRENT (AMPS) Figure 7. Inductive Storage Time. FORCED GAIN Figure 9. toff 3500 2500 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 µH 2000 1500 1000 TJ = 25°C TJ = 125°C 0 1 2500 8 IB(off) = IC/2 LC = 200 µH VZ = 300 V VCC = 15 V TJ = 25°C TJ = 125°C 3000 t si . IC/IB = 10 http://onsemi. tsi Figure 10.com 300 . Inductive Switching. TIME (ns) 200 150 100 VCC = 15 V IB(off) = IC/2 LC = 200 µH VZ = 300 V 50 0 0 1 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 tfi 2 TJ = 25°C TJ = 125°C 3 4 5 0 0 1 tfi 2 TJ = 25°C TJ = 125°C 3 4 5 IC. COLLECTOR CURRENT (AMPS) Figure 11. TIME (ns) t. Resistive Switching. COLLECTOR CURRENT (AMPS) hFE. ton Figure 8. tc & tfi. COLLECTOR CURRENT (AMPS) 3000 t.

FORCED GAIN Figure 13. high voltage and current must be sustained simultaneously during turn–off with the base– to–emitter junction reverse–biased.BUL45 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 150 300 130 IC = 1 A 120 t c .1 0.0 0. The data of Figure 15 is based on TC = 25°C. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.5 V 600 700 500 400 VCE. Inductive Fall Time..com 301 . Second breakdown limitations do not derate the same as thermal limitations. COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 16. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. COLLECTOR CURRENT (AMPS) 100 1µs EXTENDED SOA 1. Forward Bias Safe Operating Area POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 0.6 0. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. COLLECTOR CURRENT (AMPS) I C .4 THERMAL DERATING 0. the transistor must not be subjected to greater dissipation than the curves indicate. CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating VBE(off) = 0 V -1. TJ(pk) may be calculated from the data in Figures 20. i. At any case temperatures.01 10 100 4 3 2 VCE. For inductive loads. FORCED GAIN 4 5 6 IC = 2 A 7 8 9 10 11 12 13 14 15 hFE. Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 6 DC (BUL45) 10 5ms 1ms 50µs 10µs I C . Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Reverse Bias Switching Safe Operating Area 1.e. The safe level is specified as a reverse–biased safe operating area (Figure 16). TJ(pk) is variable depending on power level. CROSSOVER TIME (ns) 140 t fi . Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. http://onsemi. tfi(hFE) Figure 14.8 -5 V 1 0 300 1000 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 5 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.2 0 20 40 60 80 100 120 140 TC. FALL TIME (ns) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C 110 100 90 IC = 2 A 80 70 3 5 4 6 7 8 9 10 11 12 13 250 IC = 1 A 200 150 100 50 15 14 VCC = 15 V VZ = 300 V IB(off) = IC/2 LC = 200 µH TJ = 25°C TJ = 125°C 3 hFE.

1 P(pk) 0.00 1000. Inductive Switching Measurements +15 V 1 µF 10% IC 2 IB -5 0 tc 10% VCLAMP IB 3 1 µs -3 VCLAMP 4 90% IB -2 90% IC tfi IC 9 VCE RB1 IB1 Iout IB A 50 Ω MJE210 COMMON 150 Ω 3W 500 µF IB2 RB2 MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Table 1.00 D = 0. TIME (ms) Figure 20.00 RθJC(t) = r(t) RθJC RθJC = 2.10 0. D = t1/t2 0.BUL45 5 4 10 VCE dyn 1 µs 3 8 VOLTS 2 1 tsi 7 dyn 3 µs 6 5 0 -1 -4 90% IB1 1 3 µs 0 1 2 3 4 TIME 5 6 7 8 0 Figure 18.10 1.2 0.05 t1 0.com 302 100.5 0.01 0.00 t.01 DUTY CYCLE. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1.02 t2 SINGLE PULSE 0. Typical Thermal Response (ZθJC(t)) for BUL45 http://onsemi. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 150 Ω 3W 7 8 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V 6 IC PEAK 100 µF MTP8P10 100 Ω 3W 5 Figure 19.TC = P(pk) RθJC(t) 10.00 .5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .

1 µF C3 1000 V 47 Ω L D4 100 V D2 AC LINE 220 V D6 Q2 MUR150 C2 CTN 1N4007 10 nF C6 400 V 0. For proper operation they must be re–calculated with any other loads. A circuit designed by ON Semiconductor applications was built to 22 µF MUR150 385 V IC Q1 47 Ω 1Ω 470 kΩ D9 C5 D5 D3 C1 D10 demonstrate how well these devices operate. The circuit and detailed component list are provided below.5 mH 1N5761 1Ω Components Lists Q1 D1 D2 D3 D5 D7 CTN L = = = = = = = = T1 = All resistors are 1/4 Watt.6 mm FT10 toroid. ±5% R1 = 470 kΩ R2 = R3 = 47 Ω R4 = R5 = 1 Ω (these resistors are optional. Since this design does not include the line input filter.1 µF 5.1 µF 1000 V 15 µF C4 TUBE T1B D8 FUSE D1 D7 IC 0.1 µF/400 V Q2 = BUL45 Transistor 1N4007 Rectifier 1N5761 Rectifier D4 = MUR150 D6 = MUR105 D8 = D9 = D10 = 1N400 47 Ω @ 25°C RM10 core. T4A (LCC) Primary: 4 turns Secondaries: T1A: 4 turns Secondaries: T1B: 4 turns NOTES: 1. T1A 400 V 0.1 µF C3 = 10 nF/1000 V C4 = 15 nF/1000 V C5 = C6 = 0. 2. it cannot be used “as–is” in a practical industrial circuit. Application Example http://onsemi. A1 = 400. B51 (LCC) 75 turns. and might be replaced by a short circuit) C1 = 22 µF/385 V C2 = 0.BUL45 The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. Figure 21.com 303 . wire ∅ = 0. The windings are given for a 55 Watt load.

Tstg –65 to 200 C THERMAL CHARACTERISTICS Characteristic Symbol BUV20 θJC Thermal Resistance.5 V) VCEX 160 260 Vdc Collector–Emitter voltage (RBE = 100 Ω) VCER 150 260 Vdc Collector–Current — Continuous — Peak (PW  10 ms) 160 260 7 IC ICM CASE 197A–05 TO–204AE (TO–3) Vdc Vdc 50 60 Adc Apk Base–Current continuous IB 10 Adc Total Power Dissipation @ TC = 25C PD 250 Watts Operating and Storage Junction Temperature Range TJ. = 0. 2001 May. designed for high speed. 10 304 Publication Order Number: BUV20/D .0 DERATING FACTOR 0.6 V at IC = 25 A = 0. LLC.2 0 40 80 120 TC. .ON Semiconductor BUV20 BUV60 SWITCHMODE Series NPN Silicon Power Transistor .7 Unit C/W 1. Junction to Case BUV60 0.25 µs at IC = 50 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Collector–Emititer Voltage BUV20 VCEO(sus) BUV60 125 Unit Vdc Collector–Base Voltage VCBO Emitter–Base Voltage VEBO Collector–Emitter Voltage (VBE = –1. Power Derating  Semiconductor Components Industries.4 0. .9 V at IC = 50 A Very fast switching times: TF = 0. 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A = 10 at IC = 50 A Low VCE(sat): VCE(sat) max. 2001 – Rev. TEMPERATURE (°C) 160 200 Figure 1.8 0. high current.6 0. high power applications.

0 12 ICEO Emitter–Base Reverse Voltage (IE = 50 mA) BUV20. BUV60 3. IB = 5 A)0 BUV20 Collector–Emitter Saturation Voltage (IC = 25 A. BUV60 VEBO Emitter–Cutoff Current (VEB = 5 V) BUV20. IB = 7.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased (VCE = 20 V.5 A) BUV60 BUV60 20 10 60 – VCE(sat) Vdc 0.0 7 IEBO mAdc V 1. http://onsemi. IB = 5 A) BUV20 BUV20 Base–Emitter Saturation Voltage (IC = 50 A. IB1 = IB2 = 5 A. VBE = – 1.com 305 ton 1.6 1.2 tf 0.5 V) (VCE = 140 V. A VCC = 30 V. IB = 1. VBE = – 1.5 A) (IC = 50 A.9 0. L = 25 mH) Vdc BUV20.25 µs .5 V.6 Ω) Fall Time 1 Pulse Test: Pulse Width  300 µs. VCE = 4 V) BUV20 BUV20 hFE Collector–Emitter Saturation Voltage (IC = 25 A. IB = 2.5 ts 1.0 VCE(sat) Vdc 0. IC = 2 A. IB = 0. RC = 0. f = 4 MHz) fT 8. IB = 5 A) (IC = 60 A. VCE = 2 V) (IC = 50 A.2 VBE(sat) Vdc 1.BUV20 BUV60 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 125 Max Unit OFF CHARACTERISTICS1 Collector–Emitter Sustaining Voltage (IC = 200 mA. IB = 5 A) (IC = 60 A. BUV60 Collector Cutoff Current at Reverse Bias (VCE = 140 V.8 DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (VCE = 15 V. IB = 7.5 A) BUV60 BUV60 BUV60 Base–Emitter Saturation Voltage (IC = 50 A.9 1. t = 1 s) IS/b Adc 12 1. TC = 125C) (VCE = 260 V. Duty Cycle  2%.25 A) (IC = 50 A.2 VBE(sat) Vdc 2.5 V) BUV20 BUV20 BUV60 ICEX Collector–Emitter Cutoff Current (VCE = 100 V) BUV20 mAdc 3.0 MHz SWITCHING CHARACTERISTICS (Resistive Load) Turn–on Time Storage Time (IC = 50 A A.6 1. VBE = – 1.5 ON CHARACTERISTICS1 DC Current Gain (IC = 25 A. t = 1 s) (VCE = 40 V.

The data of Figure 2 is based on TC = 25C.2 40 0. COLLECTOR-EMITTER VOLTAGE (V) 1 Figure 2.. TJ(pk) is variable depending on power level.BUV20 BUV60 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.4 0.0 100 VCE = 4 V IC/IB = 10 80 V.8 VCE(sat) 0.e. DC Current Gain VCC = 30 V IC/IB1 = 10 IB1 = IB2 3. COLLECTOR CURRENT (A) Figure 3. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation i. the transistor must not be subjected to greater dissipation than the curves indicate. TIME (s) µ 60 1 20 0 100 10 1 10 IC.6 Ω tF RC — Non inductive resistance 0 10 20 30 40 50 IC.com 306 . VOLTAGE (V) 1. At high case temperatures.4 0 t.0 tS 0.0 VCC RC 1. Second breakdown limitations do not derate the same as thermal limitations. COLLECTOR CURRENT (A) 50 10 1 10 100 125 VCE. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Active Region Safe Operating Area 2.6 VBE(sat) 1. IC.2 ton 104 µF IB2 IB1 VCC = 30 V RC = 0. Switching Times Test Circuit Figure 5. COLLECTOR CURRENT (A) Figure 6.3 0. Resistive Switching Performance http://onsemi. “On” Voltages Figure 4. COLLECTOR CURRENT (A) IC.0 2.

LLC. = 0. . 2001 – Rev. = 20 at IC = 12 A Low VCE(sat). .8 0. VCE(sat) max. 2001 May. = 0.ON Semiconductor SWITCHMODE Series NPN Silicon Power Transistor BUV21 . Power Derating  Semiconductor Components Industries.4 µs at IC = 25 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit VCEO(sus) 200 Vdc Collector–Base Voltage VCBO 250 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage (VBE = –1. 9 307 Publication Order Number: BUV21/D .2 0 40 80 120 TC.4 0.6 V at IC = 8 A Very fast switching times: TF max. high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. high current. Junction to Case 1.6 0.0 DERATING FACTOR 0.5 V) VCEX 250 Vdc Collector–Emitter Voltage (RBE = 100 Ω) VCER 240 Vdc IC ICM 40 50 Adc Apk Collector–Emitter Voltage Collector–Current — Continuous — Peak (PW  10 ms) Base–Current continuous IB 8 Adc Total Power Dissipation @ TC = 25C PD 250 Watts TJ.7 C/W Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Tstg –65 to 200 C Symbol Max Unit θJC 0. designed for high speed. TEMPERATURE (°C) 160 200 Figure 1.

IC = 2 A. f = 4 MHz) fT 8.4 µs .2 A) (IC = 25 A. A VCC = 100 V. VBE = –1.0 7 mAdc V 1.0 MHz SWITCHING CHARACTERISTICS (Resistive Load) Turn-on Time Storage Time (IC = 25 A A. IB1 = IB2 = 3 A.0 3. L = 25 mH) Collector Cutoff Current at Reverse Bias: (VCE = 250 V.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased (VCE = 20 V. t = 1 s) (VCE = 140 V. TC = 125C) ICEX Collector–Emitter Cutoff Current (VCE = 160 V) ICEO Emitter–Base Reverse Voltage (IE = 50 mA) VEBO Emitter–Cutoff Current (VEB = 5 V) IEBO Vdc mAdc 3. VBE = –1.15 ON CHARACTERISTICS1 DC Current Gain (IC = 12 A. http://onsemi. VCE = 4 V) hFE 20 10 Collector–Emitter Saturation Voltage (IC = 12 A. t = 1 s) IS/b Adc 12 0.5 Vdc DYNAMIC CHARACTERISTICS Current Gain – Bandwidth Product (VCE = 15 V.5 1.8 tf 0. IB = 1.BUV21 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 200 Max Unit OFF CHARACTERISTICS1 Collector–Emitter Sustaining Voltage (IC = 200 mA.0 12.0 ts 1. IB = 0.com 308 ton 1.5 V. VCE = 2 V) (IC = 25 A. IB = 3 A) VCE(sat) Base–Emitter Saturation Voltage (IC = 25 A.6 1. IB = 3 A) VBE(sat) 60 Vdc 0. Duty Cycle  2%.5 V) (VCE = 250 V. RC = 4 Ω) Fall Time 1 Pulse Test: Pulse Width  300 µs.

4 10 VCE 0 1 0 100 10 IC.0 2. COLLECTOR CURRENT (A) 40 10 1 0.e.8 20 0.2 Ω RC – RB: Non inductive resistances Figure 6. Active Region Safe Operating Area 2. TJ(pk) is variable depending on power level. DC Current Gain VCE = 100 V IC/IB1 = 8 IB1 = IB2 3. Resistive Switching Performance VCC = 100 V RC = 4 Ω RB = 2. TIME (s) µ 10 Figure 4.0 IB2 tS 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. the transistor must not be subjected to greater dissipation than the curves indicate.BUV21 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.6 40 1.0 VCC RC 1. COLLECTOR CURRENT (A) 1 IC.000 µF 20 25 Figure 5. Switching Times Test Circuit http://onsemi. The data of Figure 2 is based on TC = 25C. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation i.4 0.2 30 VBE 0. COLLECTOR CURRENT (A) Figure 3.3 0. “On” Voltages t.. At high case temperatures. COLLECTOR CURRENT (A) 10.1 1 10 100 200 VCE.2 IB1 ton RB tF 0 5 10 15 IC. COLLECTOR-EMITTER VOLTAGE (V) Figure 2.0 50 IC/IB = 8 VCE = 5 V V.com 309 . Second breakdown limitations do not derate the same as thermal limitations. VOLTAGE (V) 1. IC.

2001 March.0 DERATING FACTOR 0.35 µs at IC = 20 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol Value Unit VCEO(sus) 250 Vdc Collector–Base Voltage VCBO 300 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage (VBE = –1. = 0.2 0 40 80 120 160 200 TC. LLC.8 0. Junction to Case 1. . TEMPERATURE (°C) Figure 1.7 C/W Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. . Power Derating  Semiconductor Components Industries.6 0. = 1.0 V at IC = 10 A Very fast switching times: TF max. high speed.ON Semiconductor BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . 9 310 Publication Order Number: BUV22/D .5 V) VCEX 300 Vdc Collector–Emitter Voltage (RBE = 100 Ω) VCER 290 Vdc Collector–Current — Continuous — Peak (pw  10 ms) IC ICM 40 50 Adc Apk Base–Current continuous IB 8 Adc Total Power Dissipation @ TC = 25C PD 250 Watts TJ.4 0. 2001 – Rev. high power applications. Tstg –65 to 200 C Symbol Max Unit θJC 0. designed for high current. • High DC current gain: • • HFE min. = 20 at IC = 10 A Low VCE(sat): VCE(sat) max.

5 1.com 311 ton 0. TC = 125C) ICEX Collector–Emitter Cutoff Current (VCE = 200 V) ICEO Emitter–Base Reverse Voltage (IE = 50 mA) VEBO Emitter–Cutoff Current (VEB = 5 V) IEBO Vdc mAdc 3. IC = 2 A. IB = 0.5 Vdc DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (VCE = 15 V. VCE = 4 V) (IC = 20 A. IB = 2.0 3. RC = 5 Ω) Fall Time 1Pulse Test: Pulse Width  300 µs.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased (VCE = 20 V. t = 1 s) IS/b Adc 12 0. Duty Cycle  2%.0 1.8 ts 2. VBE = –1.15 ON CHARACTERISTICS1 DC Current Gain (IC = 10 A. t = 1 s) (VCE = 140 V.0 tf 0.5 5A A. IB = 1 A) (IC = 20 A. VCE = 4 V) hFE 20 10 Collector–Emitter Saturation Voltage (IC = 10 A. VCC = 100 V.5 V.5 A) VCE(sat) Base–Emitter Saturation Voltage (IC = 40 A.0 MHz SWITCHING CHARACTERISTICS (Resistive Load) Turn–on Time Storage Time (IC = 20 A A.35 µs . VBE = –1. http://onsemi. IB = 4 A) VBE(sat) 60 Vdc 1. IB1 = IB2 = 2 2.BUV22 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 250 Max Unit OFF CHARACTERISTICS1 Collector–Emitter Sustaining Voltage (IC = 200 mA.0 7 mAdc V 1.5 V) (VCE = 300 V.0 12. L = 25 mH) Collector Cutoff Current at Reverse Bias (VCE = 300 V. f = 4 MHz) fT 8.

6 40 1. COLLECTOR CURRENT (A) Figure 3.0 2. At high case temperatures. IC.0 0. COLLECTOR-EMITTER VOLTAGE (V) Figure 2. thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown. TJ(pk) is variable depending on power level. COLLECTOR CURRENT (A) 1 100 IC. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation i. The data of Figure 2 is based on TC = 25C.1 1 10 100 250 VCE. Active Region Safe Operating Area 2.e. Second breakdown limitations do not derate the same as thermal limitations. TIME (s) µ 10 Figure 4. COLLECTOR CURRENT (A) 40 10 1 0.BUV22 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.1 10 IC.4 10 5 0 1 0 0. Switching Times Test Circuit Figure 5.2 IB2 IB1 ton RB tF 4 8 12 16 104 µF 20 VCC = RC = RB = IB1 = IC/IB = 100 V 5Ω 2. the transistor must not be subjected to greater dissipation than the curves indicate.0 50 IC/IB = 8 45 V. DC Current Gain VCC 3. COLLECTOR CURRENT (A) Figure 6. Resistive Switching Performance http://onsemi. “On” Voltages t.3 0.8 VCE VCE = 5 V 35 30 25 20 15 0.2 VBE 0.7 Ω IB2 8 RC – RB: Non inductive resistances 24 IC.4 0.. VOLTAGE (V) 1.com 312 .0 RC tS 1.

inverters. Tstg –65 to +150 C Characteristic Symbol Max Unit Thermal Resistance.0 Reverse Base Current — Peak IBM 1 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 50 400 Watts mW/C TJ. IB = 0.3 µs (typ) at IC = 1.5 C/W Maximum Lead Temperature for Soldering Purpose: 1/8″ from Case for 5 Seconds TL 275 C Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB Adc IB THERMAL CHARACTERISTICS (1) Pulse Test: Pulse Width = 5 ms. Duty Cycle 10%. motor control systems. 9 313 Publication Order Number: BUX85/D .0 A.0 V (max) at IC = 1. Junction to Case RθJC 2.ON Semiconductor BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage.5 C/W Thermal Resistance.2 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol BUX84 BUX85 Unit Collector–Emitter Voltage VCEO(sus) 400 450 Vdc Collector–Emitter Voltage VCES 800 1000 Vdc Emitter Base Voltage VEBO 5 IC 2 3.0 Collector Current — Continuous — Peak (1) Vdc Adc ICM Base Current — Continuous — Peak (1) IBM 0. 2001 March.  Semiconductor Components Industries. 2001 – Rev. Junction to Ambient RθJA 62. high speed power switching applications like converters. LLC. Specifications Features: • VCEO(sus) 450 V • • • VCES(sus) 1000 V Fall time = 0. switching regulators.0 A VCE(sat) = 1.75 1.

Duty Cycle 2%. IB = 200 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 1 Adc. IC = 1 A IB1 = 0.4 A S fifig. IB = 30 mAdc) (IC = 1 Adc. IC = 0) IEBO — — 1 mAdc hFE 30 50 — — — — — — 0. 2 See Same above cond.BUX85 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 — — Vdc — — — — 0. VCE = 5 V) Collector–Emitter Saturation Voltage (IC = 0.1 Vdc fT 4 — — MHz ton — 0.5 µs tf — 0. 1 Collector Cutoff Current (VCES = Rated Value) (VCES = Rated Value.8 1 ON CHARACTERISTICS (1) DC Current Gain (IC = 0. VCE = 1 0 Vdc.com 314 .1 Adc. f = 1 MHz) SWITCHING CHARACTERISTICS Turn–on Time Storage Time Fall Time Fall Time VCC = 250 Vdc.3 Adc. TC = 125C) ICES mAdc Emitter Cutoff Current (VEB = 5 Vdc. at TC = 95C (1) Pulse Test: PW = 300 µs.4 µs DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 mAdc.3 0. IB2 = 0.2 Adc) VBE(sat) — — 1.2 A.5 µs ts — 2 3.2 1. IB = 0. (L = 25 mH) See fig. http://onsemi.5 OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (IC = 100 mAdc.3 — µs tf — — 1.

Test Circuit for VCEOsust tr ≤ 30 ns IBon 90 IB % 10 t IBoff WAVEFORM ICon 90 IC % 10 0 t tf ts ton +25 V BD139 680 µF 200 Ω 250 Ω 100 µF T 100 Ω T.T. VIM 30 Ω tµ VI 100 Ω 50 Ω BD140 Figure 2.com 315 680 µF VCC 250 V . Switching Times/Test Circuit http://onsemi.U.BUX85 +6 V L 250 HOR OSCILLOSCOPE 250 IC (mA) 100 VERT ~ 30-60 Hz 4V + 100 Ω MIN VCEOsust 0 VCEO (V) 1Ω Figure 1.

11 60 — D44H10 D45H10 20 — D44H8.0 Vdc. for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators. Tstg CASE 221A–06 TO–220AB C –55 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic DC Current Gain (VCE = 1.  Semiconductor Components Industries. 11 Unit VCEO 60 80 Vdc Collector–Emitter Voltage Emitter Base Voltage VEB 5.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS D44H or D45H Rating Symbol 8 10. 80 VOLTS VCE(sat) = 1. Junction to Ambient RθJA 75 C/W TL 275 C Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Width  6. Duty Cycle  50%.11 D44H8. LLC. *ON Semiconductor Preferred Device • Low Collector–Emitter Saturation Voltage • • 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60. .0 V (Max) @ 8.0 Vdc Collector Current — Continuous — Peak (1) IC 10 20 Adc Total Power Dissipation @ TC = 25C @ TA = 25C PD Watts 50 1. IC = 2.0 Vdc. Junction to Case RθJC 2.67 Operating and Storage Junction Temperature Range TJ.0 Adc) (VCE = 1.ON Semiconductor NPN Complementary Silicon Power Transistors D44H Series * PNP D45H Series * .11 D45H8.0 ms. 2 316 Publication Order Number: D44H/D .5 C/W Thermal Resistance. converters and power amplifiers.11 40 — D44H10 D45H10 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. . 2001 March.0 Adc) Symbol Min Max Unit hFE 35 — — D44H8. IC = 4. 2001 – Rev.

IB1 = 0.5 Adc.5 Adc) td + tr ns D44H Series D45H Series Storage Time (IC = 5.0 Adc.0 MHz) Ccb pF D44H Series D45H Series Gain Bandwidth Product (IC = 0.5 Adc) tf ns D44H Series D45H Series IC.0 20 30 50 70 VCE. Maximum Rated Forward Bias Safe Operating Area http://onsemi.5 — — 130 230 — — — — 50 40 — — — — 300 135 — — — — 500 500 — — — — 140 100 — — OFF CHARACTERISTICS ON CHARACTERISTICS Collector–Emitter Saturation Voltage (IC = 8.2 0.1 1.com 317 100 . COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. IB = 0. IB1 = 102 = 0.8 Adc) VBE(sat) Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc. VBE = 0) ICES — — 10 µA Emitter Cutoff Current (VEB = 5.0 0.0 ms 10 5.0 Vdc) IEBO — — 100 µA — — — — 1.0 1.0 3. IB = 0.0 µs D44H/45H8 D44H/45H10. ftest = 1.0 7.0 Adc.0 — — 1.0 100 µs 10 µs TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 2.11 D44H/D45H10 Base–Emitter Saturation Voltage (IC = 8.5 Adc) ts ns D44H Series D45H Series Fall Time (IC = 5.4 Adc) (IC = 8. COLLECTOR CURRENT (AMPS) 100 50 30 20 1.11 5.0 3.3 0.0 1. VCE = 10 Vdc. IB = 0.0 10 2.0 Adc.D44H Series D45H Series ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector Cutoff Current (VCE = Rated VCEO.0 Adc.8 Adc) VCE(sat) Vdc D44H/D45H8.0 Adc.0 Adc. IB1 = IB2 = 0. f = 20 MHz) fT MHz D44H Series D45H Series SWITCHING TIMES Delay and Rise Times (IC = 5.5 0.

2001 March.0 ms.  Semiconductor Components Industries.67 Watts W/C TJ. reverse polarities.5 C/W Thermal Resistance. 2001 – Rev. Tstg –55 to 150 C Symbol Max Unit Thermal Resistance. such as switching regulators and high frequency inverters. Duty Cycle  50%. 2 318 Publication Order Number: D44VH/D . For PNP transistors. LLC. NOTE: All polarities are shown for NPN transistors. Junction to Ambient RθJA 62. 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS • Fast Switching — tf = 90 ns (Max) • Key Parameters Specified @ 100C • Low Collector–Emitter Saturation Voltage — • VCE(sat) = 1. The devices are also well–suited for drivers for high power switching circuits.ON Semiconductor NPN D44VH Complementary Silicon Power Transistors PNP D45VH These complementary silicon power transistors are designed for high–speed switching applications.0 Vdc IC 15 20 Adc PD 83 0.0 A Complementary Pairs Simplify Circuit Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 80 Vdc Collector–Emitter Voltage VCEV 100 Vdc Emitter Base Voltage VEB 7. Junction to Case RθJC 1.5 C/W TL 275 C Collector Current — Continuous — Peak (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range ICM CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (2) Pulse Width  6.0 V (Max) @ 8.

8 Adc) (IC = 15 Adc.4 Adc) (IC = 8. TC = 100C) D44VH10 D45VH10 D44VH10 D45VH10 Vdc VBE(sat) Base–Emitter Saturation Voltage (IC = 8. VBE(off) = 4. TC = 100C) (IC = 8.0 Adc. IC = 8. IB = 0.8 Adc) Fall Time (2) Pulse Test: Pulse Width  300 µs.8 Adc. IB = 0.1 Adc.4 Adc) (IC = 8.8 1. http://onsemi. IB = 0.4 1. IB = 0) Collector–Emitter Cutoff Current (VCE = Rated VCEV.0 Vdc) (VCE = Rated VCEV.0 1. ftest = 1. IB = 0.0 Vdc.4 Adc. IB = 3. IC = 0.0 Adc.0 Adc.0 0. VCE = 10 Vdc.0 Vdc) — VCE(sat) Collector–Emitter Saturation Voltage (IC = 8.0 Vdc) (IC = 4.com 319 ns . TC = 100C) D44VH10 D45VH10 D44VH10 D45VH10 Vdc DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product (IC = 0. VBE(off) = 4. IB = 0. VCE = 1.5 — 50 — — — 120 275 — — td — — 50 tr — — 250 ts — — 700 tf — — 90 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 25 mAdc.0 Adc.1 1.D44VH D45VH ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 — — Vdc — — — — 10 100 — — 10 35 20 — — — — — — — — — — — — 0. VCE = 1. TC = 100C) ICEV Emitter Base Cutoff Current (VEB = 7.0 Adc.0 Vdc. f = 20 MHz) Cob Output Capacitance (VCB = 10 Vdc. IB1 = IB2 = 0.2 1.8 Adc) (IC = 8. IB = 0.5 — — — — — — — — 1.0 MHz) D44VH10 D45VH10 MHz pF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 20 Vdc. Duty Cycle  2%.0 Adc.0 Adc.0 Adc.0 Adc.0 Adc. IC = 0) IEBO µAdc µAdc ON CHARACTERISTICS (2) hFE DC Current Gain (IC = 2.

0 Vdc Collector Current — Continuous Peak (1) IC 4. IC = 2. 4. LLC.0 Adc) (VCE = 1. Junction to Case RθJC 4.67 Watts W/C TJ. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic DC Current Gain (VCE = 1. 2001 April.2 Adc) (VCE = 1.0 Adc Total Power Dissipation @ TC = 25C Total Power Dissipation @ TA = 25C PD 30 1.ON Semiconductor PNP D45C Complementary Silicon Power Transistor NPN D44C . IC = 1. . IC = 0. Junction to Ambient RθJA 75 C/W TL 275 C Emitter Base Voltage Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Width  6. 2001 – Rev.2 C/W Thermal Resistance.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS • Low Collector–Emitter Saturation Voltage — 0.0 Adc)  Semiconductor Components Industries.0 6. Duty Cycle  50%.0 ms.0 Vdc. . 3 Symbol Min Max 40 20 20 120 — — hFE Unit — 320 Publication Order Number: D45C/D . for general purpose driver or medium power output stages in CW or switching applications.0 Vdc. Tstg –55 to 150 C Symbol Max Unit Thermal Resistance.0 Vdc.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Emitter Voltage VCES 90 Vdc VEB 5.

04 0.1 Adc) tf — 50 75 ns OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc. Maximum Rated Forward Bias Safe Operating Area http://onsemi.0 IC. IB1 = IB2 = 0. DC CURRENT GAIN VCE = 1.135 0.0 7. IB1 = IB2 = 0.0 Figure 2.03 0.0 Adc.1 Adc) ts — 350 550 ns Fall Time (IC = 1.0 Adc.0 0.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 3.05 0.0 10 20 30 50 2.0 1. f = 1.5 0. f = 20 MHz) SWITCHING TIMES Delay and Rise Times (IC = 1.1 1.com 321 .0 VCE.1 Adc) 200 10 IC.4 0. VBE = 0) ICES — — 0.5 Vdc Base–Emitter Saturation Voltage (IC = 1. IB1 = 0.0 Vdc.0 ms TC ≤ 70°C DUTY CYCLE ≤ 50% 0. COLLECTOR CURRENT (AMPS) hFE.0 Vdc TJ = 25°C 100 90 80 70 60 50 40 30 20 0.0 µs 10 µs 5. IB = 100 mAdc) VBE(sat) — 0.3 Vdc Ccb — 125 — pF fT — 40 — MHz td + tr — 50 75 ns Storage Time (IC = 1.0 3. COLLECTOR CURRENT (AMPS) 2.0 MHz) Gain Bandwidth Product (IC = 20 mA.0 3.07 0.0 4.85 1. Typical DC Current Gain 5.1 µA Emitter Cutoff Current (VEB = 5.3 0.0 2.1 ms dc 1.0 3. IB = 50 mAdc) VCE(sat) — 0.0 0.3 0.01 1.7 1.0 Vdc) IEBO — — 10 µA Collector–Emitter Saturation Voltage (IC = 1.1 0.0 Adc.02 0.2 0.NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector Cutoff Current (VCE = Rated VCES.0 Adc.0 Adc. VCE = 4.

0 k EMITTER ≈ 40 EMITTER Figure 1. LLC. PNP MJ11015 BASE COLLECTOR BASE ≈ 8.  Semiconductor Components Industries.0 k ≈ 40 ≈ 8. 2001 – Rev.87 C/W TL 275 C COLLECTOR NPN MJ11012 MJ11016 Thermal Resistance. Darlington Circuit Schematic Preferred devices are ON Semiconductor recommended choices for future use and best overall value. for use as output devices in complementary general purpose amplifier applications. Junction to Case Maximum Lead Temperature for Soldering Purposes for  10 Seconds. 2001 May.15 Watts W/C TJ. .ON Semiconductor PNP High-Current Complementary Silicon Transistors MJ11015 . . MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 (Min) @ IC – 20 Adc Monolithic Construction with Built–in Base Emitter Shunt Resistor Junction Temperature to +200C *ON Semiconductor Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–120 VOLTS 200 WATTS MAXIMUM RATINGS Symbol MJ11012 MJ11015 MJ11016 Unit VCEO 60 120 Vdc Collector–Base Voltage VCB 60 120 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current IC 30 Adc Base Current IB 1 Adc Total Device Dissipation @TC = 25C Derate above 25C @ TC = 100C PD 200 1. Tstg –55 to +200 C Rating Collector–Emitter Voltage Operating Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 0. 4 322 Publication Order Number: MJ11012/D .

IB = 300 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 A.VCE = 5 Vdc) (IC = 30 Adc. MJ11016 mAdc Emitter Cutoff Current (VBE = 5 Vdc. MJ11016 Vdc ICER MJ11012 MJ11015. RBE = 1k ohm) (VCE = 120 Vdc. IB = 200 mAdc) (IC = 30 A.) Characteristics Symbol Min Max 60 120 — — — — — — 1 1 5 5 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc. TC = 150C) (VCE = 120 Vdc. IB = 0) Collector–Emitter Leakage Current (VCE = 60 Vdc. Duty Cycle  2.MJ11015 MJ11012 MJ11016 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted. f = 1 MHz) hfe (1) Pulse Test: Pulse Width = 300 µs. VCE = 5 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 20 Adc.5 5 4 — ON CHARACTERISTICS(1) DC Current Gain (IC = 20 Adc. RBE = 1k ohm. IB = 300 mAdc) VBE(sat) — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 A. TC = 150C) V(BR)CEO MJ11012 MJ11015.0%. VCE = 3 Vdc. IB = 200 mAdc) (IC = 30 Adc. RBE = 1k ohm) (VCE = 60 Vdc. http://onsemi. MJ11016 MJ11012 MJ11015. RBE = 1k ohm. IB = 0) ICEO — 1 mAdc 1000 200 — — — — 3 4 — — 3.com 323 MHz . IC = 0) IEBO — 5 mAdc Collector–Emitter Leakage Current (VCE = 50 Vdc.

Small–Signal Current Gain PNP MJ11015 NPN MJ11012.005 5 7 10 1 2 3 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. DC Current Gain (1) 5 TJ = 25°C IC/IB = 100 2 VBE(sat) VCE(sat) 1 0 0. MJ11016 4 50 70 100 200 300 f. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown.hFE.0 k Figure 3.05 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25°C SECOND BREAKDOWN LIMITATION MJ11012 0.01 VCE = 3 Vdc IC = 10 mAdc TJ = 25°C 0. COLLECTOR CURRENT (AMP) 3 5 7 10 20 30 50 70 100 200 VCE.2 0. DC CURRENT GAIN 30 k 20 k PNP MJ11015 NPN MJ11012. Active Region DC Safe Operating Area At high case temperatures. SMALL-SIGNAL CURRENT GAIN (NORMALIZED MJ11015 MJ11012 MJ11016 2 1 0.2 0. the transistor must not be subjected to greater dissipation than the curves indicate.1 0.7 hFE .2 0.5 0.3 0.1 50 IC. VOLTAGE (VOLTS) 3 0.5 1 2 500 700 1. http://onsemi.01 MJ11015.1 0..com 324 . “On” Voltages (1) Figure 5.g. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.05 PNP MJ11015 NPN MJ11012.5 0. FREQUENCY (kHz) 30 5 10 20 50 100 20 10 5 2 1 0. COLLECTOR CURRENT (AMP) V.02 0. MJ11016 10 k 7k 5k 3k 2k 700 500 VCE = 5 Vdc TJ = 25°C 300 0. MJ11016 0.02 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operations e.5 0. MJ11016 2 IC. COLLECTOR CURRENT (AMP) 20 30 10 20 Figure 2.

16 Watts W/C TJ.8 V (Typ) @ IC = 10 A Monolithic Construction 100% SOA Tested @ VCE = 44 V. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. low frequency switching and motor control applications.0 V (Typ) @ IC = 5. • High dc Current Gain @ 10 Adc — • • • • hFE = 400 Min (All Types) Collector–Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) – MJ11022.0 ms. IC = 4. LLC.86 C/W (1) Pulse Test: Pulse Width 5.0 A.0 A = 1. designed for use as general purpose amplifiers. 0 325 Publication Order Number: MJ11021/D . *ON Semiconductor Preferred Device 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–120 VOLTS 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol MJ11022 MJ11021 Unit VCEO 250 Vdc Collector–Base Voltage VCB 250 Vdc Emitter–Base Voltage VEB 50 Vdc IC 15 30 Adc Rating Collector–Emitter Voltage Collector Current — Continuous Peak Base Current IB 0. t = 250 ms.5 Adc Total Device Dissipation @ TC = 25C Derate Above 25C PD 175 1. 2001 May. 21 Low Collector–Emitter Saturation VCE(sat) = 1. . Junction to Case Symbol Max Unit RθJC 0. .ON Semiconductor PNP MJ11021 * Complementary Darlington Silicon Power Transistors NPN MJ11022 .  Semiconductor Components Industries. Duty Cycle  10%. 2001 – Rev. Tstg –65 to +175 –65 to +200 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.

4 2.0 2. http://onsemi.0 MHz) Output Capacitance (VCB = 10 Vdc. VBE(off) = 1.5 µs . CASE TEMPERATURE (°C) 175 200 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 250 — — 1. IB = 150 mA) VBE(sat) — 3.4 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.PD. VCE = 3.com 326 Symbol NPN PNP Unit td 150 75 ns tr 1.0 — 2. POWER DISSIPATION (WATTS) MJ11021 MJ11022 200 150 100 50 0 0 25 50 75 100 125 150 TC.0 400 100 15. VCE = 5.8 Vdc [hfe] 3.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 10 Adc. IC = 10 A.0 Vdc.0 3.0 Vdc) VBE(on) — 2.5 5.0 Vdc. IC = 0) IEBO mAdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc. TJ = 150C) ICEV Emitter Cutoff Current (VBE = 5. f = 0.0 — Mhz — — 400 600 75 — — DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 Adc. VCE = 3.0 kHz) hfe pF SWITCHING CHARACTERISTICS Typical Characteristic Delay Time Rise Time Storage Time (VCC = 100 V. IB = 0) MJ11021. IB = 100 mA VBE(off) ( ) = 50 V) (See Figure 2.) Fall Time (1) Pulsed Test: Pulse Width = 300 µs. IB = 150 mA) VCE(sat) Vdc Base–Emitter On Voltage IC = 10 A.8 Vdc Base–Emitter Saturation Voltage (IC = 15 Adc.000 — — — 2.0 Vdc. IB = 0) MJ11021.5 Vdc.2 0.5 µs ts 4.0 Vdc) (IC = 15 Adc.0 — — 0. MJ11022 Vdc ICEO Collector Cutoff Current (VCE = Rated VCB. IB = 100 mA) (IC = 15 Adc.5 Vdc) (VCE = Rated VCB. IE = 0. VBE(off) = 1.7 µs tf 10. VCE = 5. 1 Adc. f = 1. f = 1.1 MHz) Cob MJ11022 MJ11021 Small–Signal Current Gain (IC = 10 Adc. VCE = 5. MJ11022 VCEO(sus) Collector Cutoff Current (VCE = 125. Duty Cycle  2%.

5 0. Switching Times Test Circuit 1.2 0.03 0. Thermal Response http://onsemi. e.3 0.com 327 20 30 P(pk) t1 t2 DUTY CYCLE.2 0.02 0. r(t).: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC 100 V RC TUT SCOPE RB V2 APPROX +12 V D1 51 0 V1 APPROX -8.0 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2.0% For NPN test circuit reverse diode and voltage polarities.5 0.0 t.07 0.05 0.05 0. tf ≤ 10 ns DUTY CYCLE = 1.2 0.86°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .02 0.0 3.02 0.0 5.g.0 2.05 1.1 0.TC = P(pk) RθJC(t) 0.0 V ≈ 10 K ≈ 8. TIME (ms) 10 Figure 3.MJ11021 MJ11022 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.3 0.7 0. D = t1/t2 50 100 200 300 500 1000 .0 +4. D1 is disconnected and V2 = 0 tr.01 SINGLE PULSE 0.0 V 25 µs for td and tr.01 D = 0.01 0.03 0.1 RθJC(t) = r(t) RθJC RθJC(t) = 0.5 1.0 0.

0 10 20 30 50 70 20 10 0 100 150 200 L = 200 µH IC/IB1 ≥ 50 TC = 25°C VBE(off) 0 . in most cases. with the base to emitter junction reverse biased.2 0 3. TJ(pk) may be calculated from the data in Figure 3. RC snubbing.5 0.5ms 0. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. The data of Figure 4 is based on T J(pk) = 175C.3 0.0 3. the transistor must not be subjected to greater dissipation than the curves indicate.0ms 30 20 10 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) 260 Figure 4.0ms 30 0. Under these conditions the collector voltage must be hold to a safe level at or below a specific value of collector current.0 V RBE = 47 Ω DUTY CYLE = 10% VCE. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.0 2. Maximum Rated Forward Bias Safe Operating Area (FBSOA) Figure 5.0 1.1 ms IC. Figure 5 gives ROSOA characteristics. i. Maximum RBSOA. load line shaping. COLLECTOR CURRENT (AMPS) MJ11021 MJ11022 dc TJ = 175°C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25°C SINGLE PULSE 5.0 0.. COLLECTOR CURRENT (AMPS) IC. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  175C. This can be accomplished by several means such as active clamping. etc. At high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.0 7.e.com 328 . TC is variable dependIng on conditions.0 1. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. high voltage and high current must be sustained simultaneously during turn–off. COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 20 60 100 140 180 220 VCE.5. Reverse Bias Safe Operating Area REVERSE BIAS FORWARD BIAS For inductive loads. There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown.5.

0 5.0 2.3 15 20 10 0.0 5.3 0.5 0.5 0.000 VCE = 5. Collector Saturation Region PNP NPN 4.0 20 30 50 0.2 0.5 4.0 3.0 10 20 30 50 70 100 200 300 500 IB.2 0.7 1.0 3. “On” Voltages http://onsemi.5 1.0 2.0 V 2.55°C 1000 700 500 200 100 0.2 0. DC Current Gain NPN IC = 15 A 3.0 10 COLLECTOR CURRENT (AMPS) Figure 8.0 7.0 7.5 0.000 7000 5000 TJ = .5 2.0 A 2. COLLECTOR CURRENT (A) 300 0.7 1.0 2.0 7.0 3.0 2.5 2.0 3.1 VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 5.0 IC = 15 A 3.0 1.0 7.0 3.5 2.5 1.7 1.0 IC.000 20.0 10 TJ = 25°C 2.7 1.0 A 2.5 0.0 VOLTAGE (VOLTS) VOLTAGE (VOLTS) 3.0 IC = 5.5 0.0 Vdc TJ = 150°C 3000 2000 TJ = 25°C 1000 700 500 VCE = 5.5 1.0 4.5 TJ = 25°C 3.1 70 VBE @ VCE = 5.5 TJ = 25°C IC = 10 A 3.0 10 20 30 50 70 100 200 300 500 IB.5 2.0 1. DC CURRENT GAIN 10.55°C 300 TJ = 25°C 3000 2000 TJ = .0 1.0 0.MJ11021 MJ11022 PNP NPN 30.0 5.0 0.7 1.5 TJ = 25°C IC = 10 A 3.0 3.0 3.0 IC = 5.com 329 20 30 50 .0 2.0 VCE(sat) @ IC/IB = 100 0.0 COLLECTOR CURRENT (AMPS) VCE(sat) @ IC/IB = 100 2. DC CURRENT GAIN hFE.5 VBE(sat) @ IC/IB = 100 1.7 1.0 0.5 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP 4.5 0.0 3. BASE CURRENT (mA) VCE . COLLECTOR CURRENT (A) 10 15 20 Figure 6. BASE CURRENT (mA) Figure 7.3 0.3 0.0 5.0 5.000 7000 5000 hFE.0 7.0 Vdc TJ = 150°C 10.0 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .5 0.0 1.0 V 0.2 0.5 0.0 7.5 0.

for use as output devices in complementary general purpose amplifier applications. Tstg –55 to +200 C Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE (TO–3) THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes for  10 seconds Thermal Resistance Junction to Case Symbol Max Unit TL 275 C RθJC 0. .71 Watts W/C TJ.584 C COLLECTOR PNP MJ11029 MJ11033 BASE COLLECTOR NPN MJ11028 MJ11032 BASE ≈ 3. MJ11029 • High DC Current Gain — MJ11033 * • • • • hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed) Diode Protection to Rated IC Monolithic Construction with Built–In Base–Emitter Shunt Resistor Junction Temperature to +200C *ON Semiconductor Preferred Device 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60–120 VOLTS 300 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol MJ11028 MJ11029 MJ11032 MJ11033 Unit VCEO 60 120 Vdc Collector–Base Voltage VCB 60 120 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC ICM 50 100 Adc Base Current — Continuous IB 2 Adc Total Power Dissipation @ TC = 25C Derate above 25C @ TC = 100C PD 300 1. 2001 May. LLC. .0 k ≈ 25 ≈ 3.ON Semiconductor NPN MJ11028 High-Current Complementary Silicon Transistors MJ11032* PNP .  Semiconductor Components Industries. 3 330 Publication Order Number: MJ11028/D . Darlington Circuit Schematic Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 k EMITTER ≈ 25 EMITTER Figure 1. 2001 – Rev.

IB = 250 mAdc) (IC = 50 Adc.0%. IB = 500 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 25 Adc. RBE = 1 k ohm) (VCE = 60 Vdc. MJ11033 MJ11028. IB = 300 mAdc) VBE(sat) (1) Pulse Test: Pulse Width  300 µs.com 331 — Vdc Vdc . VCE = 5 Vdc) (IC = 50 Adc.5 ON CHARACTERISTICS (1) DC Current Gain (IC = 25 Adc. MJ11029 MJ11032. RBE = 1 k ohm. MJ11033 ICER mAdc Emitter Cutoff Current (VBE = 5 Vdc. IC = 0) IEBO — 5 mAdc Collector–Emitter Leakage Current (VCE = 50 Vdc.0 4. MJ11029 MJ11032. MJ11029 MJ11032.5 3. VCE = 5 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 25 Adc.MJ11028 MJ11032 MJ11029 MJ11033 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 60 120 — — Vdc — — — — 2 2 10 10 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (IC = 1 00 mAdc. IB = 0) MJ11028. TC = 150C) MJ11028. Duty Cycle  2. RBE = 1 k ohm) (VCE = 120 Vdc. IB = 200 mAdc) (IC = 50 Adc. RBE = 1 k ohm. IB = 0) ICEO — 2 mAdc 1k 400 18 k — — — 2. MJ11033 Collector–Emitter Leakage Current (VCE = 60 Vdc. TC = 150C) (VCE = 120 Vdc. http://onsemi.5 — — 3.

The data of Figure 2 is based on TJ(pk) = 200C. DC Current Gain Figure 4. TC is variable depending on conditions. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. i. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 0. MJ11032 NPN 1k 500 80 µs (PULSED) 200 100 1 2 5 10 20 50 100 VCE . MJ11033 PNP MJ11028.5 0.2 0. COLLECTOR CURRENT (AMP) 100 There are two limitations on the power–handling ability of a transistor: average junction temperature and second breakdown. MJ11033 PNP MJ11028. 33 0. the transistor must not be subjected to greater dissipation than the curves indicate.MJ11028 MJ11032 MJ11029 MJ11033 IC. 29 MJ11032. At high case temperatures.e.5 1 2 5 10 20 50 100 VCE. 50 20 10 5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED 2 1 MJ11028. “On” Voltage http://onsemi.. MJ11032 NPN 4 3 TJ = 25°C IC/IB = 100 VBE(sat) 2 1 0 80 µs (PULSED) VCE(sat) 1 2 3 5 10 20 IC.com 332 50 100 .2 0. COLLECTOR CURRENT (AMP) Figure 3. COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 k VCE = 5 V TJ = 25°C hFE. DC Safe Operating Area 5 MJ11029. COLLECTOR CURRENT (AMP) IC. DC CURRENT GAIN 50 k 20 k 10 k 5k 2k MJ11029.

584 C/W Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE (TO–3) THERMAL CHARACTERISTICS Characteristic PD. POWER DISSIPATION (WATTS) Thermal Resistance. 2001 March. CASE TEMPERATURE (°C) 200 240 Figure 1. designed for use in high–power amplifier and switching circuit applications. LLC.  Semiconductor Components Industries. MJ14003 * PNP MJ14001 • High Current Capability — • • *ON Semiconductor Preferred Device IC Continuous = 60 Amperes DC Current Gain — hFE = 15–100 @ IC = 50 Adc Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.ON Semiconductor NPN High-Current Complementary Silicon Power Transistors MJ14002 * . 4 333 Publication Order Number: MJ14001/D . Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. . . Junction to Case 360 330 270 210 150 90 30 0 0 40 80 120 160 TC. 2001 – Rev. Tstg –65 to +200 C Symbol Max Unit RθJC 0.5 Vdc (Max) @ IC = 50 Adc 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60–80 VOLTS 300 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol MJ14001 MJ14002 MJ14003 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current — Continuous IC 60 Adc Base Current — Continuous IB 15 Adc Emitter Current — Continuous IE 75 Total Power Dissipation @ TC = 25C Derate above 25C PD 300 17 Watts W/C TJ.

IB = 12 Adc) VCE(sat) Base–Emitter Saturation Voltage (1) (IC = 25 Adc. VCE = 3. TJ(pk) may be calculated from the data in Figure 13. IB = 12 Adc) VBE(sat) — Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc.0 — 1. 1.e.0 — — 1. f = 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.0 5. Collector Cutoff Current (VCB = 60 Vdc. COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2.0 ms MJ14001 MJ14002.0 TC = 25°C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.2 0.0 V) hFE Collector–Emitter Saturation Voltage (1) (IC = 25 Adc. TC is variable depending on conditions.5 3 — — — 2 3 4 — 2000 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc.0 µs dc 10 7.0 2. mA ICEX mA ICBO Emitter Cutoff Current (VBE = 5 Vdc.5 Adc) (IC = 50 Adc.0 Adc) (IC = 60 Adc.5 Adc) (IC = 50 Adc. IB = 0) MJ14003 MJ14001 MJ14402.0 30 15 5 — 100 — — — — 1 2. IB = 2. Duty Cycle  2%.0 3. IB = 2. At high case temperatures.0 2.0 V) (IC = 60 Adc. COLLECTOR CURRENT (AMP) 5.0 1.0 5.3 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ICEO Collector Cutoff Current (VCE = 60 Vdc.0 7. VBE(off) = 1.5 0.5 V) (VCE = 80 Vdc. IE = 0) MJ14003 MJ14001 MJ14002. 100 70 50 30 20 IC.0 V) (IC = 50 Adc.0 1.5 V) MJ14003 MJ14001 MJ14002.com 334 . the transistor must not be subjected to greater dissipation than the curves indicate.0 3. IB = 0) VCEO(sus) MJ14001 MJ14002. IB = 5.7 0. IC = 0) IEBO mA mA ON CHARACTERISTICS DC Current Gain (1) (IC = 25 Adc. IE = 0.0 Adc) (IC = 60 Adc.0 0. The data of Figure 2 is based on TJ(pk) = 200C.1 MHz) Cob pF (1) Pulse Test: Pulse Width = 300 µs.1 1.. VCE = 3. VBE(off) = 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.0 — — 1.MJ14002 MJ14001 MJ14003 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1.0 1. Maximum Rated Forward Biased Safe Operating Area http://onsemi. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  200C. VCE = 3. IE = 0) (VCB = 80 Vdc.0 10 20 30 50 70 VCE. IB = 5. IB = 0) (VCE = 40 Vdc. Vdc MJ14003 Collector Cutoff Current (VCE = 30 Vdc. MJ14003 1.

2 50 70 VBE(sat) @ IC/IB = 10 0. COLLECTOR CURRENT (AMPS) VCE .0 7.0 10 IC. COLLECTOR CURRENT (AMPS) 2.8 TJ = 25°C 2.2 0.0 7.5 0. VOLTAGE (VOLTS) V.0 TJ = 25°C 2.0 20 5.4 VCE(sat) @ IC/IB = 10 1.8 2.0 0.com 335 50 70 .MJ14002 MJ14001 MJ14003 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJ14001. COLLECTOR CURRENT (AMPS) 30 50 3.6 IC = 25 A 1. BASE CURRENT (AMPS) 5. BASE CURRENT (AMPS) 5.4 2. DC Current Gain Figure 3. DC Current Gain 2.0 2.0 7. DC CURRENT GAIN NPN MJ14002 VCE = 3.4 0 0.7 1. VOLTAGE (VOLTS) 70 2.0 1. COLLECTOR CURRENT (AMPS) Figure 8. “On” Voltages http://onsemi.0 IB.4 TJ = 25°C IC = 60 A 2.0 7.0 10 2.0 7.8 TJ = 25°C IC = 60 A 2.0 V TJ = -55°C TJ = 25°C TJ = 150°C 30 20 10 7.0 70 5.1 0.8 Figure 5.0 V VCE(sat) @ IC/IB = 10 1.0 3.0 IC.4 0 0.0 IB.7 1. COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 20 IC. Collector Saturation Region 2.7 50 Figure 4.0 2.7 1.4 30 0 0.0 7. DC CURRENT GAIN hFE.0 10 20 30 2.2 0.8 IC = 10 A 0.7 1. “On” Voltages Figure 7.6 1.0 10 2.0 V TJ = -55°C TJ = 25°C TJ = 150°C 30 20 10 70 50 VCE = 3. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .4 V.2 0. MJ14003 300 200 300 200 100 100 70 50 hFE.4 5.0 1.0 3.0 3.0 3.0 7.5 0.0 V 0.8 VBE(on) @ VCE = 3.8 IC = 10 A 0. Collector Saturation Region 0 0.0 5.6 IC = 25 A 1.0 10 20 30 IC.0 3.0 0.0 2.2 0.0 3.3 0.7 VBE(on) @ VCE = 3.0 1.8 0.1 0.0 5.0 10 Figure 6.0 3.0 1.0 5.0 2.3 0.2 VBE(sat) @ IC/IB = 10 0.6 1.

0 10 20 30 VR.5 RB -12 V MJ14002 (NPN) MJ14001. Capacitance Variation 1.03 0.1 0. D = t1/t2 50 70 100 200 300 500 700 1000 2000 . TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 12.0 0.1 0.02 TO SCOPE tr ≤ 20 ns D = 0.07 0. Turn–Off Switching Times VCC Cib 30 0.04 0.7 1. MJ14003 (PNP) 0. TIME (ms) 20 30 Figure 13. Thermal Response http://onsemi.0 5.0 3.0 5.0 7.MJ14002 MJ14001 MJ14003 1.0 1.0 10 t.0 10 20 30 IC.0 0.03 0.01 0.0 Cob -30 V TO SCOPE tr ≤ 20 ns 10 to 100 µs DUTY CYCLE ≈ 2.0 2.0 V Cib 50 Figure 10.0 3.5 4.0 3. COLLECTOR CURRENT (AMPS) 50 MJ14002 (NPN) MJ14001.05 0.05 0.0% +7.0 7. FOR NPN CIRCUITS.0 0.2 0.5 0.07 MJ14002 (NPN) MJ14001.0 7.01 0.1 0. Turn–On Switching Times 2.01 SINGLE PULSE 0.1 0.com 336 P(pk) t1 t2 DUTY CYCLE.5 0.0 tr 0.0 5.3 0. COLLECTOR CURRENT (AMPS) (p ) .584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . RB 0 10000 7000 5000 tr ≤ 20 ns -12 V 2000 300 TJ = 25°C 2. REVERSE VOLTAGE (VOLTS) 50 FOR CURVES OF FIGURES 3 & 6.7 0.TC = P(pk) RθJC(t) 0.5 tf 0.07 0.02 0.3 td 0.0 70 Figure 9.0 2.1 0.7 0.05 -30 V tr ≤ 20 ns 10 to 100 µs VBB DUTY CYCLE ≈ 2.2 RθJC(t) = r(t) RθJC RθJC = 0. 70 100 r(t).07 0. MJ14003 (PNP) 3. REVERSE ALL POLARITIES.7 1.3 0.0 VCC RL +10 V 0 Cob 200 100 1.0 5.0 10 20 IC.7 1.0% 3000 1000 700 500 70 RL +2.03 0. RB & RL ARE VARIED.0 V Figure 11.0 3.2 0.0 7. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. t.2 0. TIME (s) µ (µ ) 0.05 . MJ14003 (PNP) 0.7 0.3 0.02 ts 2. Switching Test Circuit 0.2 0.02 0.

• High Safe Operating Area (100% Tested) — • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS 200 W @ 40 V 50 W @ 100 V For Low Distortion Complementary Designs High DC Current Gain — hFE = 25 (Min) @ IC = 4 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 140 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current — Continuous IC 15 Adc Base Current — Continuous IB 5 Adc Emitter Current — Continuous IE 20 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 200 1. 2001 March. 2 Symbol Max Unit RθJC 0.14 Watts W/C TJ. disk head positioners and other linear applications. LLC. Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.ON Semiconductor NPN Complementary Silicon Power Transistors MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio. Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/16″ from Case for  10 seconds  Semiconductor Components Industries. 2001 – Rev.875 C/W TL 265 C 337 Publication Order Number: MJ15001/D .

At high case temperatures. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. the transistor must not be subjected to greater dissipation than the curves indicate.e. IC.5 MHz) Output Capacitance (VCB = 10 Vdc. COLLECTOR CURRENT (AMP) TC = 25°C 10 7 5 3 2 TJ = 200°C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 0.MJ15001 MJ15002 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 140 — Vdc — — 100 2 µAdc mAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC. i. VBE(off) = 1.5 — — hFE 25 150 — Collector–Emitter Saturation Voltage (IC = 4 Adc. IB = 0) ICEO — 250 µAdc Emitter Cutoff Current (VEB = 5 Vdc. TC = 150C) ICEX Collector Cutoff Current (VCE = 140 Vdc.4 Adc) VCE(sat) — 1 Vdc Base–Emitter On Voltage (IC = 4 Adc.7 0.2 2 3 5 7 10 20 30 50 70 100 VCE.5 Vdc) (VCE = 140 Vdc. The data of Figure 1 is based on TJ (pk) = 200C. ftest = 0. = 200 mAdc. IB = 0) Collector Cutoff Current (VCE = 140 Vdc. VBE(off) = 1. ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs. Duty Cycle  2%. Active–Region Safe Operating Area http://onsemi. IC = 0) IEBO — 100 µAdc 5 0.5 Adc. IB = 0. t = 1 s (non–repetitive)) (VCE = 100 Vdc. 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 Vdc. TC is variable depending on conditions. VCE = 10 Vdc. COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 1. t = 1 s (non–repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 4 Adc. VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0. VCE = 2 Vdc) VBE(on) — 2 Vdc fT 2 — MHz Cob — 1000 pF SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc.5 0.3 0. IE = 0.com 338 .

7 1 2 3 5 7 IC.7 1 IC.3 0. Capacitances 100 MJ15002 (PNP) 8 0.2 0. CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 10 9 7 5 4 3 1 0 0.2 0.6 1. Current–Gain — Bandwidth Product MJ15002 200 200 VCE = 2 Vdc TJ = 100°C 25°C 30 20 10 7 5 3 2 0.4 VCE(sat) @ IC/IB = 10 25°C 1 VBE @ VCE = 2 Vdc 7 10 0 0.3 20 VCE = 2 Vdc TJ = 100°C 100 hFE . CAPACITANCE (pF) 1000 700 500 TJ = 25°C Cib 300 200 Cib Cob 100 70 50 Cob 30 MJ15001 (NPN) MJ15002 (PNP) 20 10 1.com 339 0.3 0.3 0.7 TJ = 100°C 1.5 0. VOLTAGE (VOLTS) MJ15001 2.8 TJ = 25°C 0. VOLTAGE (VOLTS) V.MJ15001 MJ15002 C.5 0.2 0.6 1. COLLECTOR CURRENT (AMP) 10 20 10 20 Figure 4. COLLECTOR CURRENT (AMP) TJ = 100°C 100°C 0.0 1.2 0.5 0.4 100°C VCE(sat) @ IC/IB = 10 0 0. DC CURRENT GAIN MJ15001 (NPN) 2 MJ15001 70 50 TJ = 25°C VCE = 10 V ftest = 0.8 2 3 TJ = 25°C 5 IC.5 2 3 5 7 10 20 30 50 VR.7 1 2 3 5 7 IC. REVERSE VOLTAGE (VOLTS) 100 150 70 f T.5 MHz 6 Figure 2. DC CURRENT GAIN hFE .2 0.2 V. DC Current Gain MJ15002 2.5 0.7 1 25°C 2 3 5 IC.3 20 Figure 5.1 2 3 0.2 0.5 0. COLLECTOR CURRENT (AMP) 10 70 50 25°C 30 20 10 7 5 3 2 0. “On” Voltages http://onsemi. COLLECTOR CURRENT (AMP) 7 .0 VBE @ VCE = 2 Vdc 0. COLLECTOR CURRENT (AMP) 5 7 10 Figure 3.

43 Watts W/C TJ. 9 340 Publication Order Number: MJ15003/D . 2001 – Rev. *ON Semiconductor Preferred Device • High Safe Operating Area (100% Tested) — • • 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 250 W @ 50 V For Low Distortion Complementary Designs High DC Current Gain — hFE = 25 (Min) @ IC = 5 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 140 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current — Continuous IC 20 Adc Base Current — Continuous IB 5 Adc Emitter Current — Continuous IE 25 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 250 1. LLC.70 C/W TL 265 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/16″ from Case for  10 seconds Preferred devices are ON Semiconductor recommended choices for future use and best overall value. disk head positioners and other linear applications. 2001 March. Tstg –65 to +200 C Symbol Max Unit RθJC 0.  Semiconductor Components Industries.ON Semiconductor NPN Complementary Silicon Power Transistors MJ15003 * PNP MJ15004 * The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio.

IB = 0. VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 0. ftest = 1 MHz) IC. i. TC is variable depending on conditions. VBE(off) = 1. VCE = 10 Vdc. t = 1 s (non repetitive)) (VCE = 100 Vdc. Active–Region Safe Operating Area http://onsemi. TC = 25°C 7 5 3 2 TJ = 200°C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 0. IB = 0) Collector Cutoff Current (VCE = 140 Vdc. The data of Figure 1 is based on TJ(pk) = 200C. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. t = 1 s (non repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 5 Adc.5 Adc. COLLECTOR CURRENT (AMP) (1) Pulse Test: Pulse Width = 300 µs. IE = 0.5 Adc) VCE(sat) — 1 Vdc Base Emitter On Voltage (IC = 5 Adc. VBE(off) = 1. VCE = 2 Vdc) VBE(on) — 2 Vdc fT 2 — MHz cob — 1000 pF SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Baised (VCE = 50 Vdc.5 Vdc) (VCE = 140 Vdc. IB = 0) ICEO — 250 µAdc Emitter Cutoff Current (VEB = 5 Vdc.e.7 0.5 0.5 MHz) Output Capacitance (VCB = 10 Vdc. the transistor must not be subjected to greater dissipation than the curves indicate. IC = 0) IEBO — 100 µAdc 5 1 — — hFE 25 150 Collector Emitter Saturation Voltage (IC = 5 Adc.5 Vdc. ftest = 0. 20 15 10 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. TC = 150C) ICEX Collector Cutoff Current (VCE = 140 Vdc. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation..2 2 3 5 7 10 20 30 50 70 100 150 200 VCE. At high case temperatures.MJ15003 MJ15004 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 140 — Vdc — — 100 2 µAdc mAdc OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) (IC = 200 mAdc. Duty Cycle  2%.com 341 .

2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage • hFE = 20 (Min) @ 2 A. Duty Cycle  10%. *ON Semiconductor Preferred Device 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS • High Safe Operating Area (100% Tested) 1. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Tstg –65 to +200 C Symbol Max Unit RθJC 0. dc–to–dc converters or inverters. Junction to Case Maximum Lead Temperature for Soldering Purposes (1) Pulse Test: Pulse Width = 5 ms.875 C/W TL 265 C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.5 V (Max) @ IC = 4 A. 2 342 Publication Order Number: MJ15011/D . These devices can also be used in power switching circuits such as relay or solenoid drivers.4 A For Low Distortion Complementary Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Emitter Voltage VCEX 250 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous — Peak (1) IC ICM 10 15 Adc Base Current — Continuous — Peak (1) IB IBM 2 5 Adc Emitter Current — Continuous — Peak (1) IE IEM 12 20 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 200 1. 2 V VCE(sat) = 2.  Semiconductor Components Industries. 2001 – Rev. and other linear applications. 2001 March. disk head positioners. IB = 0. LLC.14 Watts W/C TJ.ON Semiconductor NPN Complementary Silicon Power Transistors MJ15011 * PNP MJ15012 * The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio.

VBE(off) = 15 Vdc) ICEX — 500 µAdc Emitter Cutoff Current (VBE = 5 Vdc) IEBO — 500 µAdc 20 5 100 — — — 0.8 25 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (IC = 100 mA) ON CHARACTERISTICS (1) DC Current Gain (IC = 2 Adc.4 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 4 Adc. f = 1 MHz) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc.1 15 Figure 2.1 5 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.2 0. DC Current Gain 20 30 50 70 100 150 200 VCE. Active Region Safe Operating Area http://onsemi.MJ15011 MJ15012 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 250 — Vdc Collector Cutoff Current (VCE = 200 Vdc) ICEO — 1 mAdc Collector Cutoff Current (VCE = 250 Vdc. VCE = 2 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 2 Adc. Duty Cycle  2%. t = 0.2 Adc) (IC = 4 Adc.5 1 2 IC.5 s) (VCE = 100 Vdc.5 5 2 0. IB = 0.2 0. COLLECTOR CURRENT 5 10 0.4 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc. VCE = 2 Vdc) VBE(on) — 2 Vdc Cob — 750 pF 5 1.5 s) IS/b Adc (1) Pulse Test: Pulse Width = 300 µs. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. 200 IC. t = 0. VCE = 2 Vdc) (IC = 4 Adc. COLLECTOR CURRENT (AMP) 100 hFE. DC CURRENT GAIN 10 VCE = 2 Vdc 50 20 MJ15011 MJ15012 10 2 dc 1 0. IB = 0.com 343 300 .

0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ fT = 20 MHz min.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 150 0.  Semiconductor Components Industries. designed for use as high frequency drivers in Audio Amplifiers. Tstg –65 to +200 C Symbol Max Unit RθJC 1.0 Sec. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 Vdc Collector Current — Continuous IC 4. Junction to Case POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 25 50 75 125 100 150 TC. MAXIMUM RATINGS Symbol MJ15020 MJ15021 Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 250 Vdc Emitter–Base Voltage VEBO 7. . 2001 – Rev.0 Adc Base Current — Continuous IB 2. 3. 0 344 Publication Order Number: MJ15020/D .ON Semiconductor NPN MJ15020 * PNP * MJ15021 Complementary Silicon Power Transistors . . 1.0 A. 2001 May. • Excellent Frequency Response — 4. LLC. CASE TEMPERATURE (°C) 175 200 Figure 1.86 Watts W/C TJ.0 Adc Emitter Current — Continuous IE 6. *ON Semiconductor Preferred Device • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V.17 C/W Rating Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.

COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. ftest = 1.0 Vdc fT 20 — MHz Cob — 500 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0.0 1.1 IC.5 Adc.0 3.0 MHz) Output Capacitance (VCB = 10 Vdc. DC CURRENT GAIN 200 PNP TJ = 25°C VCE = 4.0 Vdc) VBE(on) — 2. IB = 0) MJ15020. VCE = 10 Vdc.01 5.0 3.03 0.0 Adc.0 — Adc 30 10 — — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc. Ftest = 1.0 Adc. DC Current Gain Figure 3.3 0.0 5.0 2.MJ15020 MJ15021 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 250 — — 500 IEBO — 500 µAdc IS/b 3.0 0.0 10 20 30 200 300 50 70 100 VCE. IC = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward–Biased (VCE = 50 Vdc.5 0.com 345 500 .0 IC.02 TC = 25°C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJ15020/21 0.2 0.0 MHz) (1) Pulse Test: Pulse Width  300 µs. t = 0.07 0. MJ15021 VCEO(sus) Collector Cutoff Current (VCE = 200 Vdc.0 5.0 Vdc 0. COLLECTOR CURRENT (AMPS) hFE. Duty Cycle  2% TYPICAL DYNAMIC CHARACTERISTICS 100 70 50 NPN 30 20 10 7.1 0.0 Vdc Base–Emitter on Voltage (IC = 1.0 V) hFE Collector–Emitter Saturation Voltage (IC = 1. VCE = 4. COLLECTOR CURRENT (AMPS) 5.0 2.0 10 10 7.0 3. IB = 0) MJ15020. IE = 0.0 Vdc.0 2. IB = 0.0 7.7 0.5 0.05 0.1 Adc) VCE(sat) — 1.0 7.0 V) (IC = 3.7 1. VCE = 4.2 0. MJ15021 Vdc µAdc ICEO Emitter Cutoff Current (VEB = 7.0 Adc.0 0.5 s (non–repetitive) ON CHARACTERISTICS (1) DC Current Gain (IC = 1.3 0. VCE = 4. Maximum Rated Forward Biased Safe Operating Area http://onsemi.0 Adc.

2001 March. Duty Cycle  10%. Junction to Case (1) Pulse Test: Pulse Width = 5 ms. disk head positioners and other linear applications.43 Watts W/C TJ. LLC.  Semiconductor Components Industries. *ON Semiconductor Preferred Device 16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS • High Safe Operating Area (100% Tested) — • 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol MJ15022 MJ15024 Unit Collector–Emitter Voltage VCEO 200 250 Vdc Collector–Base Voltage VCBO 350 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage VCEX 400 Vdc Collector Current — Continuous Peak (1) IC 16 30 Adc Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 250 1. Tstg –65 to +200 C Symbol Max Unit RθJC 0.70 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. 9 346 Publication Order Number: MJ15022/D .ON Semiconductor NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio. 2001 – Rev. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

5 s (non–repetitive)) (VCE = 80 Vdc. VBE(off) = 1.2 0. At high case temperatures. IE = 0.8 Adc) (IC = 16 Adc.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc.0 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1k Figure 1.5 Vdc) MJ15022 MJ15024 Collector Cutoff Current (VCE = 150 Vdc. t = 0. COLLECTOR CURRENT (AMPS) 100 50 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown.2 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 8 Adc.com 347 . TC = 25°C 20 10 5. IB = 3.MJ15022 MJ15024 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 200 250 — — — — 250 250 — — 500 500 — 500 5 2 — — 15 5 60 — — — 1. IB = 0) IEBO µAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc. VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 8 Adc. IB = 0) VCEO(sus) MJ15022 MJ15024 Collector Cutoff Current (VCE = 200 Vdc. VCE = 4 Vdc) VBE(on) — 2. t = 0. TC is variable depending on conditions. Active–Region Safe Operating Area http://onsemi.2 Vdc fT 4 — MHz Cob — 500 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1 Adc.0 BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1. ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs. VCE = 4 Vdc) (IC = 16 Adc. the transistor must not be subjected to greater dissipation than the curves indicate. thermal limitations will reduce the power that can be handled to values Ion than the limitations imposed by second breakdown. Duty Cycle  2%.1 0. IC. i. IB = 0) (VCE = 200 vdc.5 s (non–repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc.1 0. ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc.2 20 0. The data of Figure 1 is based on TJ(pk) = 200C. IB = 0) MJ15022 MJ15024 µAdc ICEX µAdc ICEO Emitter Cutoff Current (VCE = 5 Vdc.e. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.5 Vdc) (VCE = 250 Vdc. VCE = 10 Vdc. VBE(off) = 1.5 10 50 100 250 500 VCE. IB = 0..4 4.

0 5.2 5.0 2.com 348 30 10 20 . DC Current Gain VCE .8 TJ = 25°C 50 0.4 1.0 1.8 5.6 0.5 1. BASE CURRENT (AMPS) 10 Figure 6.5 1.0 16 A 0.5 1. CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 9 7 6 5 4 3 2 1 0 0.0 5.1 TJ = 100°C VCE = 4 V V.2 0 0.2 1. Collector Saturation Region http://onsemi.03 8A IC = 4 A 0. COLLECTOR CURRENT (AMPS) Figure 5.2 0.15 VCE(sat) @ IC/IB = 10 100°C 0. COLLECTOR CURRENT (AMPS) 10 20 25°C 0 0.0 0.0 VBE(on) @ VCE = 4 V TJ = 25°C 100°C 0. VOLTAGE (VOLTS) 20 10 10 1.5 1 10 5.0 IC.8 TJ = 25°C 1. REVERSE VOLTAGE (VOLTS) 100 300 f T.0 30 50 VR.0 2.3 0.0 IB.0 2. Current–Gain — Bandwidth Product Figure 2. COLLECTOR CURRENT (AMPS) Figure 3.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE . Capacitances 200 TJ = 25°C VCE = 10 V fTest = 1 MHz 8 1. “On” Voltage Figure 4. DC CURRENT GAIN 100 0.1 0.0 5.5 1.0 2.MJ15022 MJ15024 C. CAPACITANCE (pF) 4000 3000 TJ = 25°C Cib 1000 500 Cob 100 40 0.0 IC.0 IC.0 0.4 1.

70 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.  Semiconductor Components Industries. 2001 – Rev. disk head positioners and other linear applications. Junction to Case (1) Pulse Test: Pulse Width = 5 ms. 2001 March. Duty Cycle  10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. *ON Semiconductor Preferred Device 16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS • High Safe Operating Area (100% Tested) — • 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol MJ15023 MJ15025 Unit Collector–Emitter Voltage VCEO 200 250 Vdc Collector–Base Voltage VCBO 350 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage VCEX 400 Vdc IC 16 30 Adc Collector Current — Continuous Peak (1) Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C TJ.ON Semiconductor PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio. LLC. Tstg –65 to +200 C Symbol Max Unit RθJC 0. 9 349 Publication Order Number: MJ15023/D .

1 0.4 4.2 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 8 Adc. VCE = 10 Vdc. Duty Cycle  2%. IB = 0) MJ15023 MJ15025 Emitter Cutoff Current (VCE = 5 Vdc.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc.2 20 0. the transistor must not be subjected to greater dissipation than the curves indicate. t = 0.0 1. ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs.1 0. VBE(off) = 1.MJ15023 MJ15025 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 200 250 — — — — 250 250 — — 500 500 — 500 5 2 — — 15 5 60 — — 1. VCE = 4 Vdc) VBE(on) — 2.5 Vdc) MJ15023 MJ15025 Collector Cutoff Current (VCE = 150 Vdc. IE = 0. VCE = 4 Vdc) (IC = 16 Adc. VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 8 Adc. At high case temperatures. COLLECTOR CURRENT (AMPS) TC = 25°C 20 10 5. TC is variable depending on conditions. IC.2 0.com 350 .5 Vdc) (VCE = 250 Vdc. IB = 0. The data of Figure 1 is based on TJ(pk) = 200C. i. IB = 0) VCEO(sus) MJ15023 MJ15025 Collector Cutoff Current (VCE = 200 Vdc. IB = 3. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Active–Region Safe Operating Area http://onsemi. IB = 0) Both µAdc ICEX µAdc ICEO IEBO µAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc. t = 0. IB = 0) (VCE = 200 Vdc.2 Vdc fT 4 — MHz Cob — 600 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1 Adc. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown..0 BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0. ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc. VBE(off) = 1.5 s (non–repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc.e. 100 50 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown.5 s (non–repetitive)) (VCE = 80 Vdc.8 Adc) (IC = 16 Adc.5 10 50 100 250 500 VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1k Figure 1.

VOLTAGE (VOLTS) hFE.0 10 Figure 3.com 351 100°C 5.MJ15023 MJ15025 4000 3000 Cib C.5 1.0 TJ = 25°C 0.5 1.3 0.0 10 . REVERSE VOLTAGE (VOLTS) 5.0 0.5 IC.5 1.0 100°C 0. CAPACITANCE (pF) TJ = 25°C 1000 500 Cob 100 0.0 2.0 V 25°C VCE(sat) @ IC/IB = 10 1. COLLECTOR CURRENT (AMPS) Figure 5.8 5.0 0.0 IC.0 5. CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS TJ = 25°C VCE = 10 V fTest = 1 MHz 9 8 7 6 5 4 3 2 1 0 0.4 1.0 10 30 50 100 300 f T.0 2. DC CURRENT GAIN 100 20 10 1.2 0.0 0.3 0.1 2.1 VBE(on) @ VCE = 4. Capacitances 200 TJ = 100°C VCE = 4. COLLECTOR CURRENT (AMPS) 10 20 0 Figure 4.0 IC.0 V 1. “On” Voltages http://onsemi.8 TJ = 25°C 50 V.0 5. COLLECTOR CURRENT (AMPS) VR. DC Current Gain 0. Current–Gain — Bandwidth Product Figure 2.2 2.

2001 – Rev.5 V VCEX 400 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 16 30 Adc Rating Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 250 1. 3 352 Publication Order Number: MJ21193/D . *ON Semiconductor Preferred Device • Total Harmonic Distortion Characterized • High DC Current Gain – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 2. LLC. IB = 0) (1) Pulse Test: Pulse Width = 5 µs. (continued) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Tstg – 65 to +200 °C CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance.5 A. disk head positioners and linear applications. 80 V. 1 Second MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1. IB = 0) Collector Cutoff Current (VCE = 200 Vdc.  Semiconductor Components Industries.43 Watts W/°C Operating and Storage Junction Temperature Range TJ.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 — — Vdc ICEO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc. Duty Cycle ≤10%. 2001 March.ON Semiconductor PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output. Junction to Case Symbol Max Unit RθJC 0.

0 7.5 6. ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc. IE = 0. Typical Current Gain Bandwidth Product TJ = 25°C ftest = 1 MHz 1.5 4. IB = 5 Adc) hFE Base–Emitter On Voltage (IC = 8 Adc.0 2.2 — — — — 1.3 V. Typical Current Gain Bandwidth Product http://onsemi. t = 1 s (non–repetitive) (VCE = 80 Vdc. VCE = 10 Vdc. VBE(off) = 1. IC = 0) IEBO — — 100 µAdc Collector Cutoff Current (VCE = 250 Vdc.0 4.0 3. VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc.5 Vdc) ICEX — — 100 µAdc 5 2.5 VCE = 10 V 5V 5. IB = 3.0 5.0 0.8 — — 0. T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f.0 5. IB = 0. T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJ21193 6.0 0 0.0 10 V 6.5 3.8 Adc) (IC = 16 Adc.0 3. ftest = 1 MHz) (1) % hFE unmatch Pulse Test: Pulse Width = 300 µs. PLOAD = 100 WRMS ed (Matched pair hFE = 50 @ 5 A/5 V) THD — 0.MJ21193 MJ21194 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc. VCE = 5 Vdc) (IC = 16 Adc. t = 1 s (non–repetitive) Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc.com 353 10 . f = 1 kHz.1 Figure 1.0 VCE = 5 V 4.08 — fT 4 — — MHz Cob — — 500 pF hFE matched Current Gain Bandwidth Product (IC = 1 Adc.0 1. Duty Cycle ≤2% NPN MJ21194 f.5 — — — — 25 8 — — — — 2.4 4 OFF CHARACTERISTICS SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc.0 IC COLLECTOR CURRENT (AMPS) 10 8.1 TJ = 25°C ftest = 1 MHz 1.2 Adc) VCE(sat) 75 Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.0 IC COLLECTOR CURRENT (AMPS) Figure 2.

VCE = 20 V 1000 0. DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.MJ21193 MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1000 hFE . DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0. VCE = 20 V PNP MJ21193 NPN MJ21194 hFE .0 1.0 10 15 20 VCE.0 10 15 20 VCE.5 A 25 1A 20 15 0. DC Current Gain. VCE = 5 V PNP MJ21193 NPN MJ21194 35 30 1. DC Current Gain.5 A 10 5.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.5 A 25 20 IB = 2 A 1A 15 IB = 2 A 30 I C.0 10 IC COLLECTOR CURRENT (AMPS) 10 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C 25 0 0 Figure 7. COLLECTOR CURRENT (A) I C.0 10 IC COLLECTOR CURRENT (AMPS) 0 5. DC CURRENT GAIN hFE .com 354 25 . COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. VCE = 5 V 1.1 VCE = 20 V 1. DC Current Gain. COLLECTOR CURRENT (A) 100 Figure 3.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 6.5 A 10 5.1 VCE = 20 V 1. DC Current Gain. Typical Output Characteristics 5.1 100 Figure 4. Typical Output Characteristics http://onsemi. DC CURRENT GAIN hFE .1 100 Figure 5.0 TJ = 25°C 0 1.

COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 20 V (SOLID) 1.1 0.1 100 Figure 9. COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor.0 0. COLLECTOR CURRENT (AMPS) NPN MJ21194 VBE(on) .0 10 100 1000 VCE. the transistor must not be subjected to greater dissipation than the curves indicate. i.com 355 .0 10 IC.0 1.1 100 Figure 10.0 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. The data of Figure 13 is based on TJ(pk) = 200°C. COLLECTOR CURRENT (AMPS) 100 Figure 12.5 TJ = 25°C 2.6 0. TC is variable depending on conditions.e.4 0.5 VBE(sat) 1.0 10 IC. Typical Saturation Voltages 10 1.8 0. BASE-EMITTER VOLTAGE (VOLTS) VBE(on) . thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.2 VCE(sat) 0 0. At high case temperatures.0 10 IC. Typical Base–Emitter Voltage IC. Typical Saturation Voltages 1.4 2..1 1.MJ21193 MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1.0 IC/IB = 10 0.0 0.1 1. Typical Base–Emitter Voltage VCE = 5 V (DASHED) 1. COLLECTOR CURRENT (AMPS) 1.2 TJ = 25°C 1. BASE-EMITTER VOLTAGE (VOLTS) PNP MJ21193 TJ = 25°C VCE = 20 V (SOLID) 0. Active Region Safe Operating Area http://onsemi.0 IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.5 VCE(sat) 0 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13.0 10 IC.1 0. 1 SEC 10 TC = 25°C 1.0 VBE(sat) VCE = 5 V (DASHED) 1. average junction temperature and secondary breakdown.1 Figure 11.

MJ21193 Typical Capacitance Figure 15. Total Harmonic Distortion Test Circuit http://onsemi. TOTAL HARMONIC HD DISTORTION (%) C.1 T . CAPACITANCE (pF) 1000 Cob Cib 1000 Cob f(test) = 1 MHz 100 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16.8 0.MJ21193 MJ21194 10000 10000 Cib TJ = 25°C C.0 10 100 100 0.com 356 8.1 f(test) = 1 MHz 1.1 1.9 0. MJ21194 Typical Capacitance 1.0 0.0 Ω 100 .2 1.5 Ω DUT -50 V Figure 17.7 0. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 Ω SOURCE AMPLIFIER DUT 0.0 10 VR. CAPACITANCE (pF) TJ = 25°C 1.5 Ω 0. REVERSE VOLTAGE (VOLTS) Figure 14. REVERSE VOLTAGE (VOLTS) VR.

2 357 Publication Order Number: MJ21195/D .7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 — — Vdc ICEO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc. (continued) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Tstg – 65 to +200 °C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. IB = 0) (1) Pulse Test: Pulse Width = 5 µs. disk head positioners and linear applications.43 Watts W/°C TJ.5 V VCEX 400 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 16 30 Adc Rating Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 250 1. 2001 April. Junction to Case Symbol Max Unit RθJC 0.ON Semiconductor PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output. Duty Cycle ≤10%. 2001 – Rev. LLC. *ON Semiconductor Preferred Device • Total Harmonic Distortion Characterized • High DC Current Gain – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A. IB = 0) Collector Cutoff Current (VCE = 200 Vdc. 1 Second MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1.  Semiconductor Components Industries. 80 V.

5 3. COLLECTOR CURRENT (AMPS) 10 7. Duty Cycle ≤2% 6.5 1.08 — fT 4 — — MHz Cob — — 500 pF hFE matched Current Gain Bandwidth Product (IC = 1 Adc. t = 1 s (non–repetitive) Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc. ftest = 1 MHz) (1) % hFE unmatch Pulse Test: Pulse Width = 300 µs. ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc.0 2.0 IC.1 1.0 0. t = 1 s (non–repetitive) (VCE = 80 Vdc. COLLECTOR CURRENT (AMPS) Figure 2. VCE = 5 Vdc) hFE 75 Base–Emitter On Voltage (IC = 8 Adc. VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc. IC = 0) IEBO — — 100 µAdc Collector Cutoff Current (VCE = 250 Vdc. IB = 3. f = 1 kHz. VCE = 10 Vdc.5 4.0 IC. IB = 0. T CURRENT BANDWIDTH PRODUCT (MHz) f.3 V.5 5.5 Vdc) ICEX — — 100 µAdc 5 2.0 1.5 7.0 3. VBE(off) = 1. PLOAD = 100 WRMS ed (Matched pair hFE = 50 @ 5 A/5 V) THD — 0.5 6.0 5.5 — — — — 25 8 — — — — 2.0 4.5 6.0 4.8 Adc) (IC = 16 Adc. Typical Current Gain Bandwidth Product 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.2 — — — — 1.5 4. VCE = 5 Vdc) (IC = 16 Adc.0 6.5 2.1 1.4 4 OFF CHARACTERISTICS SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc.0 Figure 1.5 5.8 — — 0.0 5.MJ21195 MJ21196 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc.5 1.com 358 10 .5 3.5 0 NPN MJ21196 f.5 2. Typical Current Gain Bandwidth Product http://onsemi. IE = 0.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.0 3. T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJ21195 VCE = 10 V 5V TJ = 25°C ftest = 1 MHz 0.0 1.0 2.

VCE = 5 V PNP MJ21195 NPN MJ21196 30 IB = 2 A 25 IC . COLLECTOR CURRENT (A) 1.5 A 15 10 5. DC Current Gain.0 10 15 20 VCE. DC CURRENT GAIN 1000 25°C TJ = 100°C 100 25°C -25°C VCE = 5 V 0. DC Current Gain.1 1. DC Current Gain.5 A 15 10 5. Typical Output Characteristics http://onsemi.0 10 IC. COLLECTOR CURRENT (A) 100 Figure 4.1 PNP MJ21195 NPN MJ21196 TJ = 100°C h FE .MJ21195 MJ21196 TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1000 TJ = 100°C 100 0. VCE = 5 V 30 IC . DC Current Gain.0 10 15 20 VCE. DC CURRENT GAIN 1000 5.0 0 TJ = 25°C 0 Figure 7.5 A 25 1A 20 0.1 25°C 1. VCE = 20 V 100 10 25°C -25°C 1000 h FE . DC CURRENT GAIN TJ = 100°C 100 -25°C VCE = 20 V 10 h FE .0 10 IC.1 100 Figure 6. COLLECTOR CURRENT (AMPS) Figure 3.0 10 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8.0 10 IC. Typical Output Characteristics 5. COLLECTOR CURRENT (AMPS) Figure 5. COLLECTOR CURRENT (AMPS) 10 100 VCE = 20 V 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 IB = 2 A 1. COLLECTOR CURRENT (AMPS) 10 100 VCE = 5 V 0.5 A 1A 20 0. DC CURRENT GAIN h FE . VCE = 20 V -25°C 0 1.com 359 25 .0 TJ = 25°C 0 1.

1 Figure 9.0 10 IC.6 TJ = 25°C IC/IB = 10 2. Active Region Safe Operating Area http://onsemi.1 100 VCE = 20 V (SOLID) 1. thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.0 10 IC. 10 ms 50 ms 10 1 sec 250 ms 1.2 VBE(sat) 1. COLLECTOR CURRENT (AMPS) 100 Figure 12.6 VCE(sat) 0.4 0. the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures.5 VBE(sat) 1.0 0.e. COLLECTOR CURRENT (AMPS) 1.1 Figure 11.. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Typical Base–Emitter Voltage IC . Typical Saturation Voltages 1.0 TJ = 25°C 0. BASE-EMITTER VOLTAGE (VOLTS) PNP MJ21195 10 TJ = 25°C VCE = 5 V (DASHED) 1. COLLECTOR CURRENT (AMPS) Figure 10. Typical Base–Emitter Voltage 1.1 VCE = 20 V (SOLID) 0.MJ21195 MJ21196 TYPICAL CHARACTERISTICS PNP MJ21195 NPN MJ21196 1. The data of Figure 13 is based on TJ(pk) = 200°C.8 0.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 10 IC.1 0.com 360 . i.4 0.0 0. BASE-EMITTER VOLTAGE (VOLTS) VBE(on) . COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.2 0 100 TJ = 25°C IC/IB = 10 1.0 10 IC.0 VCE(sat) 0. TC is variable depending on conditions. Typical Saturation Voltages NPN MJ21196 VBE(on) . COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13.1 1.0 10 100 1000 VCE.5 0 0. average junction temperature and secondary breakdown.0 0. COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor.0 2.0 1.1 1.

1 Cob 1.0 Ω 100 .6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16.5 Ω DUT -50 V Figure 17. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.2 1.7 0.0 0.0 10 VR. Total Harmonic Distortion Test Circuit http://onsemi. CAPACITANCE (pF) Cib 1.5 Ω 0.9 0. TOTAL HARMONIC HD DISTORTION (%) C.MJ21195 MJ21196 10000 10000 C.0 10 100 100 0. MJ21195 Typical Capacitance Figure 15. CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz 100 0. REVERSE VOLTAGE (VOLTS) Figure 14.com 361 8. REVERSE VOLTAGE (VOLTS) VR.1 TJ = 25°C ftest = 1 MHz 1.1 T . MJ21196 Typical Capacitance 1.8 0.

5 A Excellent Safe Operating Area Complement to the NPN MJ802 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Symbol Value Unit VCER 100 Vdc VCB 100 Vdc VCEO 90 Vdc VEB 4. Junction to Case PD. Power–Temperature Derating Curve  Semiconductor Components Industries.ON Semiconductor MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . LLC.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1. .0 Vdc Collector Current IC 30 Adc Base Current IB 7. for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. 9 362 Publication Order Number: MJ4502/D . • High DC Current Gain — • • hFE = 25–100 @ IC = 7. 2001 – Rev.875 C/W Collector–Emitter Voltage Emitter–Base Voltage Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Characteristic Thermal Resistance. CASE TEMPERATURE (°C) 180 200 Figure 1. Tstg –65 to +200 C Symbol Max Unit θJC 0. .14 Watts W/C TJ. POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 TC. 2001 April.

0 5.0 ms 20 1.0 2.3 Vdc fT 2.0 0.0 MHz) Test: Pulse Width  300 µs. COLLECTOR CURRENT (AMP) 50 2. Active Region Safe Operating Area http://onsemi.0 5. To insure operation below the maximum TJ. IE = 0.2 0.4 DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO.8 ON" VOLTAGE (VOLTS) hFE .0 — MHz ON CHARACTERISTICS DC Current Gain (IC = 7. IC = 0) IEBO — 1. (1)Pulse 2.0 3.0 5.0 2. RBE = 100 Ohms) Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc) Collector–Base Cutoff Current (VCB = 100 Vdc.0 1.2 0.5 Adc.0%.8 0.0 1. IB = 0.2 IC.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 1. 10 0.5 Adc.0 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc.05 TJ = 25°C 1.0 VBE @ VCE = 2.6 0.0 TJ = 200°C 5.5 2.0 3. VCE = 10 Vdc.0 0.1 1.0 1.6 VCE(sat) @ IC/IB = 10 10 20 30 0 0.5 1.4 1.0 VBE(sat) @ IC/IB = 10 IC. power–temperature derating must be observed for both steady state and pulse power conditions.2 100 µs 10 20 30 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown.0 Adc. “On” Voltages dc 5. COLLECTOREMITTER VOLTAGE (VOLTS) 100 Figure 4.com 363 . COLLECTOR CURRENT (AMP) 100 IC.0 0.5 1. COLLECTOR CURRENT (AMP) 1.2 0. IE = 0) (VCB = 100 Vdc.0 V 0.0 Figure 2. Duty Cycle  2. TC = 150C) ICBO mAdc Emitter–Base Cutoff Current (VBE = 4.8 Vdc Base–Emitter Saturation Voltage (IC = 7. DC Current Gain Figure 3. NORMALIZED CURRENT GAIN 3.03 0. 0.0 Vdc.3 0.3 0.0 3.75 Adc) VCE(sat) — 0.1 0.MJ4502 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CER 100 — Vdc VCEO(sus) 90 — Vdc — — 1. f = 1. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.5 Adc.0 mAdc hFE 25 100 — Base–Emitter “On” Voltage (IC = 7.3 Vdc Collector–Emitter Saturation Voltage (IC = 7. VCE = 2.0 Vdc) VBE(on) — 1. IB = 0.03 0.5 Adc.5 0.05 0.3 0.7 -55°C 0.75 Adc) VBE(sat) — 1.0 VCE = 2.1 0.1 0.2 0.0 10 20 30 50 VCE.0 5.0 V TJ = 175°C 25°C 1.0 ms SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS @ TC = 25°C PULSE DUTY CYCLE  10% 2. VCE = 2.

CASE TEMPERATURE (°C) 160 180 200 Figure 1.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25C PD 200 1. .14 Watts W/C TJ. • High DC Current Gain — • • hFE = 25–100 @ IC = 7. 2001 April.875 C/W Collector–Emitter Voltage Emitter–Base Voltage Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance. POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC. 9 364 Publication Order Number: M J802/D . 2001 – Rev. LLC. Power–Temperature Derating Curve  Semiconductor Components Industries.ON Semiconductor MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . Tstg –65 to +200 C Symbol Max Unit θJC 0. Junction to Case PD.0 Vdc Collector Current IC 30 Adc Base Current IB 7. . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.5 A Excellent Safe Operating Area Complement to the PNP MJ4502 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Symbol Value Unit VCER 100 Vdc VCB 100 Vdc VCEO 90 Vdc VEB 4.

3 Vdc fT 2. IE = 0) (VCB = 100 Vdc.5 Adc.0 MHz) (1)Pulse Test: Pulse Width  300 µs.0 5.5 Adc. VCE = 10 Vdc.0 mAdc hFE 25 100 — Base–Emitter “On” Voltage (IC = 7.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 1. VCE = 2. f = 1.75 Adc) VCE(sat) — 0.5 Adc. IB = 0.com 365 . Duty Cycle  2.0 — MHz ON CHARACTERISTICS(1) DC Current Gain(1) (IC = 7. VCE = 2. IC = 0) IEBO — 1. IB = 0.5 Adc.75 Adc) VBE(sat) — 1.MJ802 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCER 100 — Vdc VCEO(sus) 90 — Vdc — — 1.0 Adc.8 Vdc Base–Emitter Saturation Voltage (IC = 7.0 Vdc. RBE = 100 Ohms) Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc) Collector–Base Cutoff Current (VCB = 100 Vdc. IE = 0.0 Vdc) VBE(on) — 1. http://onsemi. TC = 150C) ICBO mAdc Emitter–Base Cutoff Current (VBE = 4.0%.3 Vdc Collector–Emitter Saturation Voltage (IC = 7.0 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc.

0 100 Figure 4.0 V .2 IC.05 IC.2 0.2 1.0 3.0 1.1 1.1 0.MJ802 2.com 366 . COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 30 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown.0 0.03 0.0 2.0 0.0 0.2 100 µs 10 1.0 0.0 5.0 5. COLLECTOR CURRENT (AMP) 1.03 0.8 VBE(sat) @ IC/IB = 10 0.0 2. NORMALIZED CURRENT GAIN 3.0 1.0 0. DC Current Gain Figure 3.4 0.0 3.05 VBE @ VCE = 2.5 0.5 0.0 ms TJ = 200° C 5.0 IC.55°C 0. COLLECTOR CURRENT (AMP) Figure 2.6 VCE = 2. dc 5.2 0.0 TJ = 175° C 25°C 1.0 10 20 30 2.5 2.3 0.2 0. To insure operation below the maximum TJ.0 2.1 0. Active Region Safe Operating Area http://onsemi.6 10 20 30 0 0.0ms SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS TC = 25°C PULSE DUTY CYCLE ≤ 10% 5.1 TJ = 25°C 1.0 V VCE(sat) @ IC/IB = 10 0. ‘‘On” Voltages 1.0 50 VCE.7 0.0 3.3 0.5 1. 0. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure.8 ON" VOLTAGE (VOLTS) hFE. COLLECTOR CURRENT (AMP) 100 50 20 1. power temperature derating must be observed for both steady state and pulse power conditions.4 DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO.3 0.

0 367 D2PAK CASE 418B STYLE 1 Y WW = Year = Work Week Publication Order Number: MJB18004D2T4/D .ON Semiconductor High Speed. High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar transistor (H2BIP).  Semiconductor Components Industries. LLC. there is no need to guarantee an hFE window. 2001 – Rev. 2001 June. Therefore. Main features: MARKING DIAGRAM • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the YWW MJB 18004D2 H2BIP Structure which Minimizes the Spread • Integrated Collector–Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC application. High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.

Duty Cycle ≤ 10%.6 Watt W/C TJ.5 C/W Junction to Ambient.com 368 . When Mounted With the Minimun Recommended Pad Size.65 62. RθJA 50 C/W TL 260 C Operating and Storage Temperature THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds (1) Pulse Test: Pulse Width = 5 ms. Tstg –65 to 150 C Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient RθJC RθJA 1. http://onsemi.MJB18004D2T4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 450 Vdc Collector–Base Breakdown Voltage VCBO 1000 Vdc Collector–Emitter Breakdown Voltage VCES 1000 Vdc Emitter–Base Voltage VEBO 12 Vdc IC Adc Collector Current — Continuous Collector Current — Peak (1) ICM 5 10 Base Current — Continuous Base Current — Peak (1) IB IBM 2 4 Adc *Total Device Dissipation @ TC = 25C *Derate above 25°C PD 75 0.

8 Adc.8 1 0. IB = 40 mAdc) @ TC = 25°C @ TC = 125°C 0.4 4A VCC = 300 V @ 1 µs @ TC = 25°C @ TC = 125°C @ 3 µs @ TC = 25°C @ TC = 125°C 3.6 1. IB = 0.6 (IC = 2 Adc. VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 15 10 28 14 (IC = 2 Adc. IB = 0.5 0. IB = 80 mAdc) Vdc @ TC = 25°C @ TC = 125°C 0.55 0.9 1.MJB18004D2T4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA. IB = 0) ICEO 100 µAdc ICES 100 500 100 µAdc IEBO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES.4 8 http://onsemi.7 1 0. IB = 0.45 0.2 Adc) @ TC = 25°C @ TC = 125°C 0.28 0.1 9 @ 1 µs @ TC = 25°C @ TC = 125°C 11 18 @ 3 µs @ TC = 25°C @ TC = 125°C 1.25 0.4 Adc) @ TC = 25°C @ TC = 125°C 0.8 0.4 Adc) VCE(sat) Collector–Emitter Saturation Voltage (IC = 0. VEB = 0) Collector Cutoff Current (VCE = 500 V.5 Vdc) @ TC = 25°C @ TC = 125°C 18 14 28 20 — DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 IC = 1 Adc IB1 = 100 mA VCC = 300 V IC = 2 Adc IB1 = 0 0.5 (IC = 1 Adc. VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 6 4 8 6 (IC = 1 Adc.9 @ TC = 25°C @ TC = 125°C 0. L = 25 mH) VCEO(sus) 450 547 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 1000 1100 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14 Vdc Collector Cutoff Current (VCE = Rated VCEO. VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C Emitter–Cutoff Current (VEB = 10 Vdc.75 1 (IC = 0.9 0. IB = 80 mAdc) Vdc hFE DC Current Gain (IC = 0.75 (IC = 2 Adc.5 0.8 Adc.8 Adc.com 369 VCE(dsat) 9 16 V .8 Adc.38 0. VCE = 2.9 @ TC = 25°C @ TC = 125°C 0.75 0. IC = 0) ON CHARACTERISTICS VBE(sat) Base–Emitter Saturation Voltage (IC = 0.

12 2. VCE = 10 Vdc. IB1 = 0. IB1 = 0. f = 1 MHz) Cib 450 750 pF 500 750 ns 1.9 µs @ TC = 25°C @ TC = 125°C tc 75 160 120 ns http://onsemi. ≤ 10%.1 1.15 µs 1.5 V DIODE CHARACTERISTICS VEC Forward Diode Voltage (IEC = 1 Adc) (IEC = 2 Adc) @ TC = 25°C @ TC = 125°C 0.4 µs @ TC = 25°C @ TC = 125°C tc 355 750 500 ns @ TC = 25°C @ TC = 125°C tf 95 230 150 ns @ TC = 25°C @ TC = 125°C ts 2.5 Adc.4 µs SWITCHING CHARACTERISTICS: Resistive Load (D. di/dt = 10 A/µs) @ TC = 25°C 335 1. VCE = 10 Vdc.7 1.C.5 0 5 Adc VCC = 300 Vdc @ TC = 25°C ton @ TC = 25°C toff @ TC = 25°C @ TC = 125°C ton 100 150 150 ns @ TC = 25°C @ TC = 125°C toff 1.4 µs @ TC = 25°C @ TC = 125°C tc 300 700 450 ns @ TC = 25°C @ TC = 125°C tf 70 100 90 ns @ TC = 25°C @ TC = 125°C ts 0.7 ns 440 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.9 .5 Adc IB1 = 500 mAdc Ad IB2 = 500 mAdc VZ = 350 V LC = 300 µH Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 400 mAdc Ad IB2 = 400 mAdc VZ = 300 V LC = 200 µH Fall Time Storage Time Crossover Time IC = 1 Adc IB1 = 100 mAdc Ad IB2 = 500 mAdc VZ = 300 V LC = 200 µH @ TC = 25°C @ TC = 125°C tf 130 300 175 ns @ TC = 25°C @ TC = 125°C ts 2. f = 1 MHz) Cob 60 100 pF Input Capacitance (IC = 0.05 0. di/dt = 10 A/µs) @ TC = 25°C (IF = 1 Adc.85 2.5 Adc IB2 = 0.com 370 2.4 Adc.1 2. di/dt = 10 A/µs) @ TC = 25°C 335 (IF = 2 Adc.8 tfr Forward Recovery Time (IF = 0.5 Adc.6 1.72 @ TC = 25°C @ TC = 125°C 1.6 SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V) Fall Time Storage Time Crossover Time IC = 2.4 Adc IB2 = 1 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 2. Pulse Width = 40 µs) Turn–on Time Turn–off Time IC = 2.5 Adc.15 0.15 1.3 µs @ TC = 25°C @ TC = 125°C ton 120 500 150 ns @ TC = 25°C @ TC = 125°C toff 2.MJB18004D2T4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1. IE = 0.5 Adc.5 Adc IB2 = 1 Adc VCC = 250 Vdc Turn–on Time Turn–off Time IC = 2 Adc.6 2. f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc.96 0. IB1 = 0.

1 1 IC.001 Figure 3.001 Figure 5. Collector Saturation Region 10 1 TJ = 25°C TJ = -20°C 0. VOLTAGE (VOLTS) 3 TJ = 25°C 10 1 10 VCE = 5 V 3A 1A TJ = 25°C 1 TJ = -20°C 0 IC = 500 mA 0.01 0.01 0. COLLECTOR CURRENT (AMPS) Figure 6. DC CURRENT GAIN VCE = 1 V TJ = 25°C 10 TJ = 125°C 1 0.1 1 IC. VOLTAGE (VOLTS) 10 Figure 4.1 1 IC.1 0.1 10 TJ = 25°C 0.001 Figure 1. DC Current Gain @ 1 Volt 4A 2A TJ = 125°C IC/IB = 5 5A 1 10 10 TJ = 25°C 2 0.com 371 10 . Collector–Emitter Saturation Voltage 10 0. Collector–Emitter Saturation Voltage 0.01 0.001 TJ = 125°C IC/IB = 20 VCE . COLLECTOR CURRENT (AMPS) 0.01 0.01 0. COLLECTOR CURRENT (AMPS) TJ = -20°C 0. DC CURRENT GAIN hFE. COLLECTOR CURRENT (AMPS) TJ = -20°C 1 0.1 10 0. DC Current Gain @ 5 Volt VCE . COLLECTOR CURRENT (AMPS) Figure 2.1 1 IC. Collector–Emitter Saturation Voltage http://onsemi. VOLTAGE (VOLTS) TJ = 125°C IC/IB = 10 VCE .1 1 IC. BASE CURRENT (mA) 0.01 0.MJB18004D2T4 TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 125°C TJ = -20°C hFE.001 0. VOLTAGE (VOLTS) VCE .1 1 IB.

VOLTAGE (VOLTS) IC/IB = 5 0. VOLTAGE (VOLTS) VBE .com 372 1000 .01 0.1 IC. Capacitance 100 BASE-EMITTER RESISTOR (Ω) Figure 12. Base–Emitter Saturation Region FORWARD DIODE VOLTAGE (VOLTS) VBE . Lc = 25 mH 10 Figure 11.001 Figure 7. COLLECTOR CURRENT (AMPS) Figure 8.001 TJ = 25°C 1 0.01 0.1 VBE . CAPACITANCE (pF) 10 10 IC/IB = 20 10 1 0.1 IC.01 Figure 9. Base–Emitter Saturation Region 10 0.1 10 25°C 1 0. VOLTAGE (VOLTS) 1 TJ = -20°C TJ = 125°C 0.1 IC. COLLECTOR CURRENT (AMPS) 1 TJ = 125°C 0. BVCER = f(RBE) http://onsemi.1 TJ = 25°C 1200 TC = 25°C BVCER @ ICER = 10 mA 1000 800 600 100 BVCER(sus) @ ICER = 200 mA.01 0. Base–Emitter Saturation Region COLLECTOR EMITTER VOLTAGE (VOLTS) Cib (pF) TJ = 25°C f(test) = 1 MHz 100 Cob 1 10 VR. Forward Diode Voltage 1000 C.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 10.MJB18004D2T4 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 1 TJ = -20°C TJ = 125°C 0. REVERSE VOLTAGE (VOLTS) 1 0. COLLECTOR CURRENT (AMPS) 125°C 0.1 10 TJ = -20°C 0.001 TJ = 25°C 1 0.

Inductive Switching Time. TIME (ns) 800 1000 600 800 tc 400 tfi 200 0 TJ = 125°C TJ = 25°C IC/IB = 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1 2 3 IC. COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = 25°C 1 Figure 13. toff 4 0 IBon = IBoff VCC = 300 V PW = 20 µs IC/IB = 10 4 t. Resistive Switch Time. TIME (s) µ IC/IB = 10 5 IBon = IBoff VCC = 300 V PW = 20 µs IC/IB = 10 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 600 400 200 0 4 0 Figure 17. TIME (ns) 1600 800 0 3 2 1 IC/IB = 5 1 0 4 3 2 IC. Resistive Switch Time. COLLECTOR CURRENT (AMPS) 4 IC/IB = 5 IC/IB = 10 3 t. COLLECTOR CURRENT (AMPS) 3 2 1 IC. COLLECTOR CURRENT (AMPS) 0 2 TJ = 125°C TJ = 25°C 0 4 TJ = 125°C TJ = 25°C t. tsi @ IC/IB = 5 0 4 Figure 14. COLLECTOR CURRENT (AMPS) 0 4 Figure 16. TIME (s) µ 3 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1 TJ = 125°C TJ = 25°C 3 1 2 IC. ton IC/IB = 5 3 2 IC.com 373 4 . Inductive Switching Time. COLLECTOR CURRENT (AMPS) Figure 18. TIME (s) µ t. TIME (ns) 1000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1 Figure 15. Inductive Storage Time. Inductive Storage Time.MJB18004D2T4 TYPICAL SWITCHING CHARACTERISTICS 3200 TJ = 125°C TJ = 25°C 2400 t. tc and tfi @ IC/IB = 5 1 2 3 IC. tfi @ IC/IB = 10 http://onsemi. tsi @ IC/IB = 10 t.

tsi 0. Inductive Crossover Time t fr . tc @ IC/IB = 10 0 TJ = 125°C TJ = 25°C IC = 1 A 3.5 1 1. FORWARD RECOVERY TIME (ns) t.5 1 1. FORCED GAIN 16 18 0 20 3 IB = 100 mA IB = 200 mA IB = 500 mA I = 1 A B 0. Inductive Fall Time 4 15 1000 IC = 1 A 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC = 2 A 400 10 hFE.5 3 IC. FORCED GAIN Figure 20. FALL TIME (ns) TJ = 125°C TJ = 25°C IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 2000 1500 600 200 4 6 8 10 12 14 hFE. FORWARD CURRENT (AMP) Figure 24. TFR http://onsemi.5 dI/dt = 10 A/µs TC = 25°C 380 340 300 4 0 Figure 23. Forward Recovery Time. Inductive Storage Time. TIME (s) µ IB = 50 mA 20 500 Figure 21. FORCED GAIN 20 420 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 2 1 TJ = 125°C TJ = 25°C Figure 22.5 2 2. CROSSOVER TIME (ns) 1000 5 0 Figure 19. COLLECTOR CURRENT (AMPS) 2 4 800 t fi . STORAGE TIME (µs) t. COLLECTOR CURRENT (AMPS) IC = 2 A IC = 1 A 2 8 14 hFE. Inductive Switching.MJB18004D2T4 TYPICAL SWITCHING CHARACTERISTICS 1600 t si .5 IF. Inductive Storage Time t c . TIME (ns) 1200 5 IC/IB = 10 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 800 400 0 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 4 IC = 2 A 3 TJ = 125°C TJ = 25°C 0 1 2 3 IC.com 374 2 .

Inductive Switching Measurements VFRM 0 5 2 4 6 Figure 27.MJB18004D2T4 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 90% IC 8 dyn 3 µs VOLTS IC 9 dyn 1 µs tfi tsi 7 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 µs 2 IB 90% IB1 1 2 1 3 µs 0 TIME 0 Figure 25.1 VF unless otherwise specified) VF VF tfr 0.com 375 8 10 .1 VF IF 10% IF 0 6 7 8 Figure 26. tfr Measurements http://onsemi. Dynamic Saturation Voltage Measurements 4 TIME 3 VFR (1.

Reverse Bias Safe Operating Area http://onsemi.5 V 600 400 800 VCE. COLLECTOR CURRENT (AMPS) 100 1 µs 10 5 ms DC 1 1 ms 10 µs EXTENDED SOA 0. Forward Bias Safe Operating Area -1. Inductive Load Switching Drive Circuit +15 V 1 µF 100 Ω 3W 150 Ω 3W VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V IC PEAK 100 µF MTP8P10 VCE RB1 IB1 Iout IB A 50 Ω COMMON V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA MTP12N10 150 Ω 3W 500 µF IB2 RB2 MJE210 1 µF -Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 TYPICAL CHARACTERISTICS 6 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 29. COLLECTOR-EMITTER VOLTAGE (VOLTS) 4 3 2 -5 V 1 0 1000 TC ≤ 125°C GAIN ≥ 5 LC = 2 mH 5 0V 200 Figure 28.1 0. COLLECTOR CURRENT (AMPS) IC.01 10 100 VCE.MJB18004D2T4 TYPICAL SWITCHING CHARACTERISTICS Table 1.com 376 .

4 THERMAL DERATING 0.5 0.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . At any case temperatures.1 1 10 RθJC(t) = r(t) RθJC RθJC = 2.e. TIME (ms) Figure 31. the transistor must not be subjected to greater dissipation than the curves indicate. The safe level is specified as a reverse–biased safe operating area (Figure 29). thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. CASE TEMPERATURE (°C) 140 160 Figure 30. For inductive loads. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.2 0. TJ(pk) is variable depending on power level. Typical Thermal Response (ZθJC(t)) for MJB18004D2T4 http://onsemi.01 t2 DUTY CYCLE. Second breakdown limitations do not derate the same as thermal limitations. high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse biased.05 0.8 0.2 0 20 40 60 80 100 120 TC.1 0.1 P(pk) 0.com 377 1000 . D = t1/t2 0. The data of Figure 28 is based on TC = 25°C.TC = P(pk) RθJC(t) 100 t. i.02 t1 SINGLE PULSE 0.0 SECOND BREAKDOWN DERATING 0.. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. POWER DERATING FACTOR 1.MJB18004D2T4 TYPICAL CHARACTERISTICS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.6 0. Forward Bias Power Derating TYPICAL THERMAL RESPONSE r(t). Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation.01 0. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. TJ(pk) may be calculated from the data in Figure 31.

one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology.66 0. For example.04 1. Power dissipation for a surface mount device is determined by TJ(max). the packages will self align when subjected to a solder reflow process. PD is calculated as follows. one can calculate the power dissipation of the device. 2 oz Copper 60 TA = 25°C 2.0625″ G-10/FR-4. the thermal resistance from the device junction to ambient. Board Material = 0.MJB18004D2T4 INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. and the operating temperature. For a D2PAK device.38 0. Thermal Resistance. Junctionto Ambient (C/W) The power dissipation for a surface mount device is a function of the Collector pad size.5 Watts 50°C/W 70 2 4 6 8 10 A. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Substituting these values into the equation for an ambient temperature TA of 25°C. By increasing the area of the collection pad.096 0. With the correct pad geometry. a graph of RθJA versus Collector pad area is shown in Figure 32 PD = R JA . RθJA. There are other alternatives to achieving higher power dissipation from the surface mount packages. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. the power dissipation can be doubled using the same footprint.5 Watts 50 3. http://onsemi.42 10. One is to increase the area of the Collector pad. Area (square inches) 12 14 16 Figure 32.08 2.5 Watts 40 5 Watts 30 20 0 θ PD = 150°C – 25°C = 2. Using the values provided on the data sheet.032 0. an aluminum core board.12 3. TA.33 8.05 0.63 17. Thermal Resistance versus Collector Pad Area for the D2PAK Package (Typical) The 50°C/W for the D2PAK package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2. the power dissipation can be increased. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. 0.com 378 .016 0. Using a board material such as Thermal Clad.5 Watts.02 inches mm POWER DISSIPATION FOR A SURFACE MOUNT DEVICE Although one can almost double the power dissipation with this method. PD can be calculated as follows: ° TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet.24 6. the maximum rated junction temperature of the die.

• Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. Therefore. When using infrared heating with the reflow soldering method. and SMB/SMC diode packages. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. SOT–223.MJB18004D2T4 SOLDER STENCIL GUIDELINES typical stencil for the DPAK and D2PAK packages. The opening for the leads is still a 1:1 registration. For packages such as the SC–59. SC–70/SOT–323. http://onsemi. • The delta temperature between the preheat and soldering should be 100°C or less. • After soldering has been completed.008 inches thick and may be made of brass or stainless steel. failure to complete soldering within a short time could result in device failure. These stencils are typically 0. the opening in the stencil for the paste should be approximately 50% of the tab area. The pattern of the opening in the stencil for the Collector pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board. SOD–123. Figure 33 shows a ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ SOLDER PASTE OPENINGS STENCIL Figure 33. Solder stencils are used to screen the optimum amount. solder paste must be applied to the pads. SO–14. • Always preheat the device. * Due to shadowing and the inability to set the wave height to incorporate other surface mount components. the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. misalignment and/or “tombstoning” may occur due to an excess of solder. SOT–143. the device should be allowed to cool naturally for at least three minutes.com 379 . This is not the case with the DPAK and D2PAK packages. SO–8. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. SOT–23. SO–16. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. If one uses a 1:1 opening to screen solder onto the Collector pad. the D2PAK is not recommended for wave soldering. the stencil opening should be the same as the pad size or a 1:1 registration. the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. the difference shall be a maximum of 10°C.* • When preheating and soldering. the maximum temperature gradient shall be 5°C or less. Typical Stencil for DPAK and D2PAK Packages SOLDERING PRECAUTIONS • When shifting from preheating to soldering. For these two packages. When the entire device is heated to a high temperature.

This profile shows temperature versus time. Typical Solder Heating Profile http://onsemi. and the type of board or substrate material being used. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 34. these control settings make up a heating “profile” for that particular circuit board. density and types of components on the board. because it has a large surface area. Figure 34 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. When this type of furnace is used for solder reflow work. then distributes this energy to the components. Because of this effect. Taken together. the circuit boards and solder joints tend to heat first. Factors that can affect the profile include the type of soldering system in use.com 380 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT . type of solder used. absorbs the thermal energy more efficiently. On machines controlled by a computer. the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. The two profiles are based on a high density and a low density board. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C.MJB18004D2T4 TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. For any given circuit board. The components on the board are then heated by conduction. the computer remembers these profiles from one operating session to the next. The circuit board. there will be a group of control settings that will give the desired heat pattern. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. This profile will vary among soldering systems but it is a good starting point. and a figure for belt speed. The operator must set temperatures for several heating zones.

1/8″ from Case for 10 Seconds Preferred devices are recommended choices for future use and best overall value.0 0.  Semiconductor Components Industries. Junction to Case RθJC 1. Tstg –65 to +150 C THERMAL CHARACTERISTICS COMPLEMENTARY SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 65 WATTS MARKING DIAGRAM MJB4xC YWW D2PAK CASE 418B STYLE 1 MJB4xC = Specific Device Code x = 1 or 2 Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping 50 Units/Rail Symbol Max Unit MJB41C D2PAK Thermal Resistance. When surface mounted to an FR–4 board using the minimum recommended pad size.F. P.R. = 10 Hz.) RθJA 50 C/W MJB42CT4 D2PAK 800/Tape & Reel TL 260 C Characteristic Maximum Lead Temperature for Soldering Purposes. IC = 2. RBE = 100  2. Junction to Ambient (Note 2. LLC. 0 381 Publication Order Number: MJB41C/D .5 mJ TJ.0 10 Adc Base Current IB 2.5 C/W MJB42C D2PAK 50 Units/Rail Thermal Resistance.MJB41C (NPN).016 Watts W/C E 62. 2001 March. L = 20 mH.52 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD Unclamped Inductive Load Energy (Note 1.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix) Electrically the Same as TIP41 and T1P42 Series MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Rating Symbol Value Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5. Junction to Ambient RθJA 62.5 A. 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 65 0.0 Vdc Collector Current – Continuous – Peak IC 6. MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.) Collector–Emitter Voltage Operating and Storage Junction Temperature Range 2. VCC = 10 V.92 C/W MJB41CT4 D2PAK 800/Tape & Reel Thermal Resistance. 2001 – Rev.

0% t. TIME (s) µ -9. Turn–On Time Figure 36.0 Vdc) DYNAMIC CHARACTERISTICS PD.7 mAdc Collector Cutoff Current (VCE = 100 Vdc.2 2. IB = 0) ICEO – 0. COLLECTOR CURRENT (AMP) Figure 37.0 Vdc) VBE(on) – 2. Power Derating VCC +30 V tr.0 Adc.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA tr td @ VBE(off) ≈ 5. IB = 0) ON CHARACTERISTICS (Note 3. VCE = 10 Vdc.7 0. VCE = 4.0 TC 80 3.2 0.0 Vdc Current–Gain – Bandwidth Product (IC = 500 mAdc. Switching Time Test Circuit http://onsemi.0 kHz) hfe 20 – – OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 3. Pulse Test: Pulse Width  300 µs.0 6.g.5 SCOPE RB 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.) DC Current Gain (IC = 0.0 RC 25 µs +11 V 2.07 0.0 V 0. IB = 600 mAdc) VCE(sat) – 1.03 0.6 0.5 Vdc Base–Emitter On Voltage (IC = 6. Duty Cycle  2.1 0.05 0.0 V 0.0 60 2.MJB41C (NPN). e. TEMPERATURE (°C) 120 140 160 Figure 35.0 IC.3 Adc.0 40 1. ftest = 1.4 0.0%.06 D1 MUST BE FAST RECOVERY TYPE.5 Adc.0 Adc. VEB = 0) ICES – 100 µAdc Emitter Cutoff Current (VBE = 5.0 – MHz Small–Signal Current Gain (IC = 0. IC = 0) IEBO – 50 Adc hFE 30 15 – 75 – Collector–Emitter Saturation Voltage (IC = 6.0 D1 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.0 0.0 Adc. f = 1.0 Vdc) DC Current Gain (IC = 3. TA 4. VCE = 4.com 382 4.) (IC = 30 mAdc.02 0.3 0. POWER DISSIPATION (WATTS) 3.0 Vdc. tf ≤ 10 ns DUTY CYCLE = 1. VCE = 10 Vdc.0 20 0 0 TC TA 0 20 40 60 100 80 T. MJB42C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 – Vdc Collector Cutoff Current (VCE = 60 Vdc.0 .1 1. VCE = 4.0 MHz) fT 3.

com 383 30 50 . TC is variable depending on conditions. CAPACITANCE (pF) t.1 0.4 0.1 0.0 0.0ms 40 10 20 60 VCE.5ms IC.05 0.05 0. TJ(pk) may be calculated from the data in Figure 4.0 tf Cib 100 70 Cob 50 0.1 0.2 0. TIME (ms) 10 20 t1 t2 DUTY CYCLE.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 Figure 39. COLLECTOR CURRENT (AMP) 5. MJB42C (PNP) 1. Capacitance http://onsemi.01 SINGLE PULSE 0.7 0. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 0.0 IC. i.0 30 0.05 0.. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.05 1.0 Figure 40.07 0.0 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.3 0.5 D = 0.r(t).06 TJ = 25°C 200 C.0 1. D = t1/t2 50 100 200 500 1.1 5.0 5.TC = P(pk) ZθJC(t) 0.03 0.0ms 3.01 0. COLLECTOR CURRENT (AMP) 4.2 0.2 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.5 6. Turn–Off Time 1.0 5. Active–Region Safe Operating Area 5.0 0.02 0.2 0.0 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.0 2.07 0.1 0.0 t.0 1.0 2.0 2. TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB41C (NPN). At high case temperatures.02 0. The data of Figure 5 is based on TJ(pk) = 150C.e.3 0. TIME (s) µ 3.01 0.5 1.2 0.0 10 20 VR. the transistor must not be subjected to greater dissipation than the curves indicate.0 300 ts 1.5 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.0 2.6 1.0 2.3 0.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . REVERSE VOLTAGE (VOLTS) Figure 41.0 5. 10 0.0 k Figure 38.7 0.02 0.0 3.5 0.

0 3.7 6.0 A 0.3 +0.2 *APPLIES FOR IC/IB ≤ hFE/4 +1.0 2.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE.0 10M VCE = 30 V IC = 10 x ICES IC ≈ ICES 100k 25°C 10-3 -0.5 A 10k IC = 2 x ICES 1. DC CURRENT GAIN 500 -55°C 0.6 0 0. BASE CURRENT (mA) IC.5 1.1 0.0 5.6 1.0 Figure 45.com 384 .0 FORWARD 0 +0.0 2. DC Current Gain 0. COLLECTOR CURRENT (AMP) 6. “On” Voltages VCE = 30 V 101 50 100 200 300 IB.0 IC.4 5.4 0.0 TJ = 25°C 1.0 0.5 +2.5 θVB FOR VBE -55°C to +25°C -2.0 4.6 +0.0 IC.0 -2.5 1.3 -0.8 Figure 42.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7. Effects of Base–Emitter Resistance http://onsemi.2 0.3 0. JUNCTION TEMPERATURE (°C) Figure 46.4 +0.0M TJ = 150°C 1000 +2.5 +25°C to +150°C -1.4 0. Temperature Coefficients 100 10-2 500 Figure 44.3 0. COLLECTOR CURRENT (AMP) 103 102 30 IC. Collector Cut–Off Region Figure 47.0 3.0 0. BASE-EMITTER VOLTAGE (VOLTS) TJ.1 0.0k 0.1 +0.2 IC = 1.1 +1. Collector Saturation Region 2.0 2. EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V.2 +0.8 2.0 A 0.06 20 Figure 43.0 -1. VOLTAGE (VOLTS) 1. MJB42C (PNP) 300 200 VCE = 2.2 0.0 +0.MJB41C (NPN). COLLECTOR CURRENT (A) µ 100°C IC = ICES 10-1 REVERSE -0.0 V VCE(sat) @ IC/IB = 10 0.5 +25°C to +150°C *θVC FOR VCE(sat) 0 -55°C to +25°C -0.4 0 10 θV.06 0.5 0. COLLECTOR CURRENT (AMP) R BE .0 4.0 2.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.6 1.3 0.6 1.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE.06 VCE . TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.0 6.1 4.5 +0.

Thermal Resistance. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. Area (square inches) 12 14 16 Figure 48. Power dissipation for a surface mount device is determined by TJ(max). http://onsemi. For example.24 6.0625″ G-10/FR-4. an aluminum core board.38 0. For a D2PAK device.016 0. Using a board material such as Thermal Clad.MJB41C (NPN). Board Material = 0. MJB42C (PNP) INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. One is to increase the area of the Collector pad. the power dissipation can be doubled using the same footprint. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation.5 Watts 40 5 Watts 30 20 0 θ PD = 150°C – 25°C = 2. Junctionto Ambient (C/W) The power dissipation for a surface mount device is a function of the Collector pad size. the thermal resistance from the device junction to ambient. 2 oz Copper 60 TA = 25°C 2. one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology.5 Watts 50 3.5 Watts.032 0. By increasing the area of the collection pad. one can calculate the power dissipation of the device. There are other alternatives to achieving higher power dissipation from the surface mount packages.04 1. the packages will self align when subjected to a solder reflow process.42 10. the power dissipation can be increased.5 Watts 50°C/W 70 2 4 6 8 10 A. the maximum rated junction temperature of the die.08 2. Using the values provided on the data sheet.com 385 .05 0. PD can be calculated as follows: ° TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet.63 17.02 inches mm POWER DISSIPATION FOR A SURFACE MOUNT DEVICE Although one can almost double the power dissipation with this method.12 3. TA. PD is calculated as follows. With the correct pad geometry.096 0.66 0. RθJA. 0. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad.33 8. Substituting these values into the equation for an ambient temperature TA of 25°C. and the operating temperature. a graph of RθJA versus Collector pad area is shown in Figure 48 PD = R JA . Thermal Resistance versus Collector Pad Area for the D2PAK Package (Typical) The 50°C/W for the D2PAK package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.

com 386 . the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. failure to complete soldering within a short time could result in device failure. • Always preheat the device. the difference shall be a maximum of 10°C. SO–14. SOD–123. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. and SMB/SMC diode packages.008 inches thick and may be made of brass or stainless steel. the device should be allowed to cool naturally for at least three minutes. MJB42C (PNP) SOLDER STENCIL GUIDELINES typical stencil for the DPAK and D2PAK packages. When the entire device is heated to a high temperature. If one uses a 1:1 opening to screen solder onto the Collector pad. This is not the case with the DPAK and D2PAK packages. SOT–143.MJB41C (NPN). the stencil opening should be the same as the pad size or a 1:1 registration. • Mechanical stress or shock should not be applied during cooling. SOT–223. For packages such as the SC–59. SC–70/SOT–323. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. the D2PAK is not recommended for wave soldering. The pattern of the opening in the stencil for the Collector pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. For these two packages. Typical Stencil for DPAK and D2PAK Packages SOLDERING PRECAUTIONS • When shifting from preheating to soldering. SO–8. * Due to shadowing and the inability to set the wave height to incorporate other surface mount components. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • After soldering has been completed. solder paste must be applied to the pads. the opening in the stencil for the paste should be approximately 50% of the tab area. Solder stencils are used to screen the optimum amount. SOT–23. SO–16. When using infrared heating with the reflow soldering method. Prior to placing surface mount components onto a printed circuit board. misalignment and/or “tombstoning” may occur due to an excess of solder. • The delta temperature between the preheat and soldering should be 100°C or less. Therefore. Figure 49 shows a ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ SOLDER PASTE OPENINGS STENCIL Figure 49. the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.* • When preheating and soldering. The opening for the leads is still a 1:1 registration. The melting temperature of solder is higher than the rated temperature of the device. the maximum temperature gradient shall be 5°C or less. http://onsemi. These stencils are typically 0.

Because of this effect. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 50. For any given circuit board. Figure 50 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. then distributes this energy to the components. type of solder used. When this type of furnace is used for solder reflow work. The circuit board.com 387 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT . Taken together. Factors that can affect the profile include the type of soldering system in use. and the type of board or substrate material being used. density and types of components on the board. the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. the computer remembers these profiles from one operating session to the next. the circuit boards and solder joints tend to heat first. This profile shows temperature versus time. On machines controlled by a computer. The components on the board are then heated by conduction. because it has a large surface area. these control settings make up a heating “profile” for that particular circuit board. and a figure for belt speed. absorbs the thermal energy more efficiently. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile.MJB41C (NPN). The two profiles are based on a high density and a low density board. The operator must set temperatures for several heating zones. This profile will vary among soldering systems but it is a good starting point. there will be a group of control settings that will give the desired heat pattern. MJB42C (PNP) TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. Typical Solder Heating Profile http://onsemi.

67 Watts W/°C 2. Tstg –55 to 150 °C Symbol Max Unit Thermal Resistance. 0 388 Publication Order Number: MJB44H11/D . MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi. . LLC. for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators. 2001 – Rev.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Rating Collector–Emitter Voltage Emitter–Base Voltage Symbol Value Unit VCEO 80 Vdc VEB 5 Vdc Collector Current – Continuous – Peak IC 10 20 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD 50 1. SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS 50 WATTS • Low Collector–Emitter Saturation Voltage – VCE(sat) = 1. .MJB44H11 (NPN). converters and power amplifiers.  Semiconductor Components Industries.0 0. Junction to Ambient RθJA 75 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM YWW MJB 4xH11 D2PAK CASE 418B STYLE 1 Y = Year WW = Work Week MJB4xH11 cific Device Code x = 4 or 5 = Spe- ORDERING INFORMATION Device Package Shipping MJB44H11 D2PAK 50 Units/Rail MJB44H11T4 D2PAK 800/Tape & Reel MJB45H11 D2PAK 50 Units/Rail MJB45H11T4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value.5 °C/W Thermal Resistance. 2001 April. Junction to Case RθJC 2.0 V (Max) @ 8.com .016 Watts W/°C TJ.

f = 20 MHz) Ccb MJB44H11 MJB45H11 pF fT MJB44H11 MJB45H11 MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc. IC = 2 Adc) DC Current Gain (VCE = 1 Vdc. IB = 0. IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc. VCE = 10 Vdc.5 Adc. IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc.8 Adc) VBE(sat) – – 1. IB1 = IB2 = 0.0 Vdc Base–Emitter Saturation Voltage (IC = 8 Adc.5 Vdc hFE 60 – – – 40 – – – – 130 230 – – – – 50 40 – – – – 300 135 – – – – 500 500 – – – – 140 100 – – OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 30 mA. VBE = 0) ICES – – 10 µA Emitter Cutoff Current (VEB = 5 Vdc) IEBO – – 50 µA Collector–Emitter Saturation Voltage (IC = 8 Adc.5 Adc) td + tr MJB44H11 MJB45H11 ns ts MJB44H11 MJB45H11 ns tf MJB44H11 MJB45H11 http://onsemi. ftest = 1 MHz) Gain Bandwidth Product (IC = 0.com 389 ns . MJB45H11 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 – – Vdc Collector Cutoff Current (VCE = Rated VCEO. IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc. IB = 0.MJB44H11 (NPN).4 Adc) VCE(sat) – – 1.5 Adc) Storage Time (IC = 5 Adc. IB1 = 0.

1 0.0 t.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.05 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.02 0.7 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB44H11 (NPN).0 ms 10 5.0 2.0 3.03 0. Maximum Rated Forward Bias Safe Operating Area PD.07 0.0 1.0 20 30 50 70 100 VCE.02 0. The data of Figure 2 is based on TJ(pk) = 150°C. TJ(pk) may be calculated from the data in Figure 1.5 0.0 0.01 0. i. MJB45H11 (PNP) 1.0 20 0 0 TA 0 20 40 60 80 100 120 T.0 µs 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.05 0.. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150°C. COLLECTOR CURRENT (AMPS) 100 TA TC 3.0 10 2.5 D = 0.1 0.0 2. the transistor must not be subjected to greater dissipation than the curves indicate.0 7.TC = P(pk) ZθJC(t) 0. 100 µs 10 µs TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.2 0.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .0 k Figure 1.01 0.5 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.02 SINGLE PULSE 0.1 0.0 5.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. TC is variable depending on conditions.0 10 20 t1 t2 DUTY CYCLE.0 40 TC 1.e. POWER DISSIPATION (WATTS) IC. D = t1/t2 50 100 200 500 1.01 0.0 3.r(t).1 1.2 0.05 0. Thermal Response 50 30 20 1. TIME (ms) 5.5 1. TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.2 0.com 390 140 160 .3 0.0 60 2. At high case temperatures.3 0.

2 25°C -40°C IC. DC CURRENT GAIN TJ = 25°C IC. MJB44H11 On–Voltages IC/IB = 10 TJ = 25°C VCE(sat) 1 IC.2 SATURATION VOLTAGE (VOLTS) 1V 10 0.2 0 0.4 TJ = 125°C 10 10 1. COLLECTOR CURRENT (AMPS) TJ = 125°C 25°C 100 -40°C VCE = 1 V 0.com 391 10 .1 10 1000 10 VCE = 4 V 100 IC/IB = 10 TJ = 25°C VCE(sat) 1 IC. MJB45H11 On–Voltages http://onsemi.1 100 IC.2 SATURATION VOLTAGE (VOLTS) VBE(sat) 0. DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0. DC CURRENT GAIN hFE . MJB45H11 DC Current Gain 1000 hFE . COLLECTOR CURRENT (AMPS) Figure 9. MJB44H11 Current Gain versus Temperature Figure 7. COLLECTOR CURRENT (AMPS) 10 1 VBE(sat) 0.MJB44H11 (NPN).1 1 10 Figure 6. MJB45H11 (PNP) 1000 hFE.4 0.6 0.8 0.1 Figure 8.1 1 VCE = 1 V 0.6 0 0. MJB45H11 Current Gain versus Temperature 1. MJB44H11 DC Current Gain Figure 5. COLLECTOR CURRENT (AMPS) 0. COLLECTOR CURRENT (AMPS) Figure 4. DC CURRENT GAIN hFE.8 0. COLLECTOR CURRENT (AMPS) 1 0.1 1 1 10 IC.

http://onsemi.MJB44H11 (NPN).24 6. One is to increase the area of the Collector pad. one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology.05 0. an aluminum core board. Area (square inches) 12 14 16 Figure 10.com 392 .33 8. There are other alternatives to achieving higher power dissipation from the surface mount packages. Junctionto Ambient (C/W) The power dissipation for a surface mount device is a function of the Collector pad size.5 Watts 50°C/W 70 2 4 6 8 10 A.096 0. For a D2PAK device. RθJA.5 Watts 40 5 Watts 30 20 0 θ PD = 150°C – 25°C = 2. Board Material = 0. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package.04 1. Power dissipation for a surface mount device is determined by TJ(max).42 10. the maximum rated junction temperature of the die.63 17.5 Watts. TA.12 3. Using a board material such as Thermal Clad. 0. Thermal Resistance.38 0. a graph of RθJA versus Collector pad area is shown in Figure 10 PD = R JA . PD can be calculated as follows: ° TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet.5 Watts 50 3. and the operating temperature. Using the values provided on the data sheet. one can calculate the power dissipation of the device. With the correct pad geometry. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. For example. MJB45H11 (PNP) INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. the packages will self align when subjected to a solder reflow process.66 0.032 0.08 2. Thermal Resistance versus Collector Pad Area for the D2PAK Package (Typical) The 50°C/W for the D2PAK package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2. the thermal resistance from the device junction to ambient. By increasing the area of the collection pad. Substituting these values into the equation for an ambient temperature TA of 25°C.0625″ G-10/FR-4.02 inches mm POWER DISSIPATION FOR A SURFACE MOUNT DEVICE Although one can almost double the power dissipation with this method. PD is calculated as follows. the power dissipation can be increased. 2 oz Copper 60 TA = 25°C 2.016 0. the power dissipation can be doubled using the same footprint.

The opening for the leads is still a 1:1 registration. the device should be allowed to cool naturally for at least three minutes. SO–16. the maximum temperature gradient shall be 5°C or less. For these two packages. SOT–143. For packages such as the SC–59. SOT–223. misalignment and/or “tombstoning” may occur due to an excess of solder.* • When preheating and soldering. and SMB/SMC diode packages. Therefore. The melting temperature of solder is higher than the rated temperature of the device. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. SC–70/SOT–323. SO–8.MJB44H11 (NPN). • The delta temperature between the preheat and soldering should be 100°C or less. Typical Stencil for DPAK and D2PAK Packages SOLDERING PRECAUTIONS • When shifting from preheating to soldering. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Mechanical stress or shock should not be applied during cooling. solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. When the entire device is heated to a high temperature.com 393 . the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. MJB45H11 (PNP) SOLDER STENCIL GUIDELINES typical stencil for the DPAK and D2PAK packages.008 inches thick and may be made of brass or stainless steel. The pattern of the opening in the stencil for the Collector pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. the opening in the stencil for the paste should be approximately 50% of the tab area. the stencil opening should be the same as the pad size or a 1:1 registration. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. http://onsemi. Figure 11 shows a ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ SOLDER PASTE OPENINGS STENCIL Figure 11. * Due to shadowing and the inability to set the wave height to incorporate other surface mount components. the difference shall be a maximum of 10°C. • After soldering has been completed. When using infrared heating with the reflow soldering method. SOT–23. If one uses a 1:1 opening to screen solder onto the Collector pad. failure to complete soldering within a short time could result in device failure. This is not the case with the DPAK and D2PAK packages. • Always preheat the device. Prior to placing surface mount components onto a printed circuit board. the D2PAK is not recommended for wave soldering. These stencils are typically 0. SOD–123. SO–14.

and the type of board or substrate material being used. and a figure for belt speed. Typical Solder Heating Profile http://onsemi. Because of this effect. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. The circuit board. The two profiles are based on a high density and a low density board. This profile will vary among soldering systems but it is a good starting point.MJB44H11 (NPN). STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 12. then distributes this energy to the components. absorbs the thermal energy more efficiently. For any given circuit board. The operator must set temperatures for several heating zones. these control settings make up a heating “profile” for that particular circuit board.com 394 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT . Factors that can affect the profile include the type of soldering system in use. the circuit boards and solder joints tend to heat first. MJB45H11 (PNP) TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. because it has a large surface area. Taken together. density and types of components on the board. type of solder used. When this type of furnace is used for solder reflow work. the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. the computer remembers these profiles from one operating session to the next. The components on the board are then heated by conduction. On machines controlled by a computer. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile shows temperature versus time. there will be a group of control settings that will give the desired heat pattern. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile.

165 4. SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for TIP110–TIP117 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 2. LLC.118 3.  Semiconductor Components Industries. 3 395 Publication Order Number: MJD112/D . converters.16 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.0 0. 2001 April.826 Symbol Rating inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value. and power amplifiers.07 1. 2001 – Rev.014 Watts W/C TJ.243 6.6 0.ON Semiconductor NPN MJD112* Complementary Darlington Power Transistors PNP MJD117* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators. Tstg –65 to +150 C Collector–Emitter Voltage MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.75 0.172 0.190 4.0 Adc Complementary Pairs Simplifies Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ • CASE 369A–13 MAXIMUM RATINGS MJD112 MJD117 Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 2 4 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.8 0.063 1.191 Operating and Storage Junction Temperature Range CASE 369–07 0.

VCE = 10 Vdc.75 Adc. f = 0.4 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc. IB = 8 mAdc) (IC = 4 Adc. IC = 0) IEBO — 2 mAdc Collector–Cutoff Current (VCB = 80 Vdc.com 396 pF . Duty Cycle  2%. VCE = 3 Vdc) (IC = 2 Adc. IE = 0) ICBO — 20 µAdc Emitter Cutoff Current (VBE = 5 Vdc. f = 1 MHz) Output Capacitance (VCB = 10 Vdc.8 Vdc fT 25 — MHz — — 200 100 DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0. IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 0. VCE = 3 Vdc) (IC = 4 Adc. IE = 0. IE = 0) ICBO — 10 µAdc Emitter–Cutoff Current (VBE = 5 Vdc. IB = 40 mAdc) VBE(sat) — 4 Vdc Base–Emitter On Voltage (IC = 2 Adc. VCE = 3 Vdc) VBE(on) — 2. http://onsemi. IC = 0) IEBO — 2 mAdc 500 1000 200 — 12. VCE = 3 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 2 Adc.MJD112 MJD117 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance.1 MHz) Cob MJD117 MJD112 (1) Pulse Test: Pulse Width  300 µs.000 — — — 2 3 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. IB = 40 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 4 Adc. Junction to Ambient* RθJA 71.25 C/W Thermal Resistance.5 Adc. Junction to Case RθJC 6. IB = 0) ICEO — 20 µAdc Collector Cutoff Current (VCB = 100 Vdc.

25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . Switching Times Test Circuit 1 0.01 0. Switching Times P(pk) t1 1 2 3 5 10 t. e. TIME (s) µ RB 51 VCC = 30 V IC/IB = 250 ts RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX -12 V 4 VCC -30 V 50 100 200 300 500 1000 .6 0.05 0. TIME OR PULSE WIDTH (ms) Figure 15.8 tr 0.07 0.3 0.2 0. MUST BE FAST RECOVERY TYPE.7 0.5 0.04 0.MJD112 MJD117 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1.6 0.05 0.5 0.2 0. r(t).5 2 4 Figure 14.1 RθJC(t) = r(t) RθJC RθJC = 6. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.01 SINGLE PULSE 0.2 0.01 IB1 = IB2 TJ = 25°C 2 t.1 0. D1 IS DISCONNECTED AND V2 = 0 tr.02 0. COLLECTOR CURRENT (AMP) 0.com 397 20 30 t2 DUTY CYCLE.4 FOR td AND tr.3 0.4 0.2 1 IC.g.05 0.02 0.2 0.03 0.1 Figure 13.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA ≈8k D1 ≈ 60 +4V 25 µs tf 1 0.TC = P(pk) θJC(t) 0. D = t1/t2 0. Thermal Response http://onsemi.03 td @ VBE(off) = 0 V PNP NPN 0. tf ≤ 10 ns DUTY CYCLE = 1% 0.1 0.

TC = 25°C C. the transistor must not be subjected to greater dissipation than the curves indicate. TEMPERATURE (°C) VCE. POWER DISSIPATION (WATTS) IC.5 5 0 0 25 50 75 100 T.MJD112 MJD117 TA TC 2.06 0.com 398 10 20 40 . REVERSE VOLTAGE (VOLTS) Figure 18.2 100µs PD. TC is variable depending on conditions. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.6 1 2 4 6 VR.2 0.1 TJ = 150°C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 2 20 1. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 16. Power Derating 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. TJ(pk) may be calculated from the data in Figure 4. i.5 15 TA SURFACE MOUNT 1 10 0. Capacitance http://onsemi. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. CAPACITANCE (pF) 100 70 50 Cob 30 20 10 0.. The data of Figures 17 and 18 is based on TJ(pk) = 150C. At high case temperatures.7 0.5 25 10 7 5 3 2 500µs 1 0.5 0.4 0.1 Cib PNP NPN 0. COLLECTOR CURRENT (AMP) ACTIVE–REGION SAFE–OPERATING AREA 5ms 1ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT 0. Maximum Rated Forward Biased Safe Operating Area TC 125 15 Figure 17.3 0.04 0.e.

COLLECTOR CURRENT (AMP) 2 3k 25°C 2k 1k 800 -55°C 600 400 300 0.6 0.6 1 2 0.04 0. VOLTAGE (VOLTS) 1.06 0. DC Current Gain 3.1 0.5 IB.2 1.4 0.04 0. COLLECTOR CURRENT (AMP) 0.4 0.8 1.2 0.2 0.4 0.6 IC = 0. VOLTAGE (VOLTS) V.06 1.4 1.4 TJ = 125°C 3 2.2 1.6 0. DC CURRENT GAIN hFE .1 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE . DC CURRENT GAIN PNP MJD117 0. COLLECTOR CURRENT (AMP) Figure 21. “On Voltages http://onsemi.5 A 1A 2A 4A 2.4 0.6 0.2 0. BASE CURRENT (mA) Figure 20.2 0.1 0.8 1.5 1 2 5 10 20 50 100 VCE .2 0.8 VBE(sat) @ IC/IB = 250 V. Collector Saturation Region 2. BASE CURRENT (mA) 1 2 5 10 20 50 100 IB.04 0.1 0.1 0.6 1 IC.com 399 2 4 . COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 19.2 0.2 2.6 1 IC.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.2 TJ = 25°C TJ = 25°C 1.06 4 IC. COLLECTOR CURRENT (AMP) 2 4 3.4 1 0.6 1 0.4 TJ = 125°C 3 IC = 0.MJD112 MJD117 TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 6k TJ = 125°C 4k 6k VCE = 3 V 3k 2k 25°C 1k 800 -55°C 600 400 300 0.04 0.06 4 VCE = 3 V TC = 125°C 4k hFE .6 0.2 0.8 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.4 1 0.1 0.6 1A 2A 4A 2.2 IC.5 A 2.

MJD112 MJD117 PNP MJD117 +0.2 -1. TEMPERATURE COEFFICIENTS (mV/°C) θV. TEMPERATURE COEFFICIENTS (mV/°C) NPN MJD112 *APPLIED FOR IC/IB < hFE/3 -0. Temperature Coefficients 105 104 103 REVERSE FORWARD IC.8 0.4 .2 0.04 0.2 -4 25°C TO 150°C θVC FOR VBE -4.8 25°C TO 150°C -1.2 -0.6 1 IC.06 0. BASE-EMITTER VOLTAGE (VOLTS) +1.6 -2.6 *θVC FOR VCE(sat) -55°C TO 25°C -2.1 -55°C TO 25°C 0. COLLECTOR CURRENT (A) µ 105 VCE = 30 V 102 101 TJ = 150°C 100 10-1 -0.4 -0.8 +1 VBE.8 0 θV.4 +0. COLLECTOR CURRENT (AMP) 2 4 +0.2 +0.2 0 +0.6 +0. BASE-EMITTER VOLTAGE (VOLTS) Figure 23.04 0.6 -0.6 1 IC.6 -0.1 0. Darlington Schematic http://onsemi.4 0. Collector Cut–Off Region COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 24.8 0.4 0.6 +0.06 0.8 -1.8 -1 VBE.2 0. COLLECTOR CURRENT (AMP) 2 4 Figure 22. COLLECTOR CURRENT (A) µ IC.4 *θVC FOR VCE(sat) -55°C TO 25°C -3.4 25°C TO 150°C -3.2 +1.2 0 -0.2 -4 -55°C TO 25°C θVB FOR VBE -4.4 100°C 25°C -0.4 100°C 25°C +0.8 0 *APPLIES FOR IC/IB < hFE/3 25°C TO 150°C -0.4 104 103 REVERSE FORWARD VCE = 30 V 102 101 TJ = 150°C 100 10-1 +0.com 400 -1.

75 0.  Semiconductor Components Industries.16 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.4 C/W 0. Junction to Ambient* RθJA 71.243 6. LLC.191 MJD122 MJD127 0. TIP120–TIP122 Series.ON Semiconductor NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications.165 4. Tstg –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.25 C/W Thermal Resistance.6 Symbol Thermal Resistance.118 3. Junction to Case 0.0 Characteristic 0.190 4. 4 401 Publication Order Number: MJD122/D .014 Watts W/C TJ.07 1. 2001 April. SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for 2N6040–2N6045 Series.826 Symbol Rating Max Unit RθJC 6. and TIP125–TIP127 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.172 0.063 1.8 THERMAL CHARACTERISTICS inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value.0 Adc Complementary Pairs Simplifies Designs CASE 369A–13 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0. 2001 – Rev.

IE = 0. VCE = 4 Vdc. IB = 80 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 8 Adc.1 MHz) Cob pF MJD127 MJD122 Small–Signal Current Gain (IC = 3 Adc.5 Vdc Base–Emitter On Voltage (IC = 4 Adc. VCE = 4 Vdc) VBE(on) — 2.5 5 0 0 25 50 75 100 T. IB = 0) ICEO — 10 µAdc Collector Cutoff Current (VCB = 100 Vdc. IB = 80 mAdc) VBE(sat) — 4. TEMPERATURE (°C) Figure 1. VCE = 4 Vdc) (IC = 8 Adc. Duty Cycle  2%. f = 1 kHz) hfe (1) Pulse Test: Pulse Width  300 µs. POWER DISSIPATION (WATTS) TA TC 2. VCE = 4 Vdc. IB = 16 mAdc) (IC = 8 Adc.000 — — — 2 4 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 30 mAdc. Power Derating http://onsemi.MJD122 MJD127 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc. VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4 Adc.5 15 TA SURFACE MOUNT 1 10 0. f = 1 MHz) Output Capacitance (VCB = 10 Vdc. f = 0.5 25 2 20 TC 1. *These ratings are applicable when surface mounted on the minimum pad sizes recommended.com 402 125 150 — . PD.8 Vdc |hfe| 4 — MHz — — 300 200 300 — DYNAMIC CHARACTERISTICS Current–Gain–Bandwidth Product (IC = 3 Adc. IC = 0) IEBO — 2 mAdc 1000 100 12. IE = 0) ICBO — 10 µAdc Emitter Cutoff Current (VBE = 5 Vdc. IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc.

VOLTAGE (VOLTS) 2.000 3000 2000 1000 700 500 300 200 0.5 0.5 0.7 1.5 0.3 IC.5 V. “On” Voltages http://onsemi. DC CURRENT GAIN hFE .6 IC = 2 A 4A 6A 2. BASE CURRENT (mA) Figure 3. COLLECTOR CURRENT (AMP) Figure 4. DC Current Gain 3 TJ = 25°C 2.3 0.000 7000 5000 20. DC CURRENT GAIN 10. VOLTAGE (VOLTS) V.5 1 VCE(sat) @ IC/IB = 250 0.1 IC.3 0.000 hFE .2 1.2 0.5 0.2 0.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE .4 1 0.5 0. COLLECTOR CURRENT (AMP) 0.8 1.4 1 0.000 VCE = 4 V 7 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0.7 1 2 3 5 VCE = 4 V 10.1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 0. COLLECTOR CURRENT (AMP) 0.5 0.5 0. COLLECTOR CURRENT (AMP) 3 TJ = 25°C 2.1 TJ = 150°C 25°C -55°C 0.5 0. BASE CURRENT (mA) 2 3 5 7 10 20 30 IB.6 IC = 2 A 4A 6A 2.com 403 5 7 10 .7 1 2 3 5 7 10 IC.2 1.5 2 1. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.7 1 2 3 IC.7 1 2 3 5 7 10 20 30 VCE .3 2 1 2 3 5 7 10 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 250 0.1 10 0.8 1.5 1 0.7 1 IB.2 0.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2.MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20.2 0.

3 0.2 0.8 -1 VBE. TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C -1 θVC for VCE(sat) -2 -3 -55°C to 25°C 25°C to 150°C θVB for VBE -4 -5 0.2 -1.8 +1 VBE. Temperature Coefficients 105 REVERSE 104 FORWARD IC. COLLECTOR CURRENT (AMP) 5 7 10 +5 +4 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 -55°C to 25°C +1 0 *θVC for VCE(sat) -1 -2 -3 -4 25°C to 150°C θVB for VBE -5 0.2 0 -0.2 0.5 0.4 +0.1 -55°C to 25°C 0.6 -0.7 1 2 3 IC.4 Figure 6.4 -0.MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV. SMALL-SIGNAL CURRENT GAIN 10.1 PNP NPN 0.000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 100 70 Cib 50 PNP NPN 1 Cob 10 20 50 100 f. TEMPERATURE COEFFICIENTS (mV/°C) θV.3 0.2 +1. COLLECTOR CURRENT (A) µ 105 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10-1 +0.6 -0.2 0. CAPACITANCE (pF) hfe .1 -55°C to 25°C 1 2 3 0.com 404 20 50 100 . Capacitance Figure 7.6 +0.6 +0.2 -0.2 +0.5 1 2 5 10 VR. REVERSE VOLTAGE (VOLTS) Figure 8. BASE-EMITTER VOLTAGE (VOLTS) -1. Small–Signal Current Gain http://onsemi.4 -0. Collector Cut–Off Region 300 5000 3000 2000 200 TJ = 25°C C.2 0 +0. FREQUENCY (kHz) 200 500 1000 30 0.4 +0. COLLECTOR CURRENT (AMP) 5 7 10 Figure 5.5 IC. BASE-EMITTER VOLTAGE (VOLTS) 104 REVERSE VCE = 30 V 103 102 FORWARD TJ = 150°C 101 100 100°C 25°C 10-1 -0.4 +1. COLLECTOR CURRENT (A) µ IC.

Switching Times Test Circuit 1 0. MUST BE FAST RECOVERY TYPE.MJD122 MJD127 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1.02 1ms TJ = 150°C 1 1 2 3 5 7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.03 0.g. e.7 0.01 0. i.5 1 2 3 5 10 t.2 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C.1 0.05 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE. the transistor must not be subjected to greater dissipation than the curves indicate.7 0. TIME (s) µ RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX -12 V RB 51 ≈ 8 k ≈ 120 D1 3 2 +4V 25 µs tf 1 0.05 0.5 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TJ(pk) may be calculated from the data in Figure 11..1 0.05 0.com 405 . TC is variable depending on conditions.07 0.02 0.3 0.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . At high case temperatures.3 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.2 0.2 100µ s 5ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.5 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 10 20 dc 30 50 70 100 VCE.TC = P(pk) θJC(t) 0.2 0. Thermal Response 20 15 10 500µ s 5 3 2 0. COLLECTOR CURRENT (AMP) Figure 11.1 FOR td AND tr.5 0.01 0. The data of Figure 12 is based on TJ(pk) = 150C. COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.3 0.e.03 0.05 0.02 0.03 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 6. Maximum Forward Bias Safe Operating rea http://onsemi.1 0.5 0.7 1 3 2 IC.07 0.05 0. D1 IS DISCONNECTED AND V2 = 0 tr.01 0. D = t1/t2 50 100 200 300 500 1000 IC.3 0.2 0.1 0.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V t. tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 0.3 0. r(t).5 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0 V 0.1 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12.

com 406 . Darlington Schematic http://onsemi.MJD122 MJD127 COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13.

High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi. TL 260 °C DPAK CASE 369 STYLE 1 MARKING DIAGRAMS YWW MJD 18002 Characteristic Operating and Storage Temperature Range YWW MJD 18002 Y = Year WW = Work Week MJD18002 = Device Code THERMAL CHARACTERISTICS Total Device Dissipation @ TC = 25°C Derate above 25°C DPAK CASE 369A STYLE 1 ORDERING INFORMATION Device Package Shipping MJD18002D2–1 DPAK 75 Units/Rail MJD18002D2T4 DPAK 3000/Tape & Reel 1. Therefore.4 W W/°C TJ. LLC.0 5.0 ms. Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.4 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 sec. high gain bipolar transistor (H2BIP).0 Adc Symbol Value Unit PD 50 0.0 2.0 °C/W Thermal Resistance – Junction–to–Ambient RθJA 71. there is no longer a need to guarantee an hFE window. Tstg –65 to +150 °C Thermal Resistance – Junction–to–Case RθJC 5. 0 407 Publication Order Number: MJD18002D2/D . 2001 – Rev.MJD18002D2 Bipolar NPN Transistor High Speed.com The MJD18002D2 is a state–of–the–art high speed. Duty Cycle = 10%  Semiconductor Components Industries. Main Features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the • • • • 2 AMPERES 1000 VOLTS 50 WATTS POWER TRANSISTOR H2BIP Structure which Minimizes the Spread Integrated Collector–Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCEsat Characteristics Make It Suitable for PFC Application “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads Two Versions: • MJD18002D2–1: Case 369 for Insertion Mode • MJD18002D2: Case 369A for Surface Mount Mode MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 450 Vdc Collector–Base Breakdown Voltage VCBO 1000 Vdc Collector–Emitter Breakdown Voltage VCES 1000 Vdc Emitter–Base Voltage VEBO 11 Vdc Collector Current – Continuous Collector Current – Peak (Note 1.) IC ICM 2.0 Adc Base Current – Continuous Base Current – Peak (Note 1. 2001 April. Pulse Test: Pulse Width = 5.) IB IBM 1.

1 – – 0.0 – – 0.40 0.0 Adc. L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO.65 0. f = 1 MHz) Cob – 50 100 pF Input Capacitance (VEB = 8 Vdc) Cib – 340 500 pF @ TC = 25°C – 1. IE = 0. IB = 0. IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.87 1. VCE = 10 Vdc. VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C Emitter–Cutoff Current (VEB = 10 Vdc.0 Adc.5 Adc.78 0.com 408 .0 Adc.4 Adc) VEC Vdc tfr ns Forward Recovery Time (IF = 0. VCE = 1.4 Adc. IB = 40 mAdc) @ TC = 25°C @ TC = 125°C (IC = 1.MJD18002D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 570 – Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 1000 1100 – Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 11 14 – Vdc ICEO – – 100 µAdc ICES – – – – – – 100 500 100 µAdc IEBO – – 500 µAdc – – 0.0 – – ft – 13 – MHz Output Capacitance (VCB = 10 Vdc.0 Adc.75 1.0 1.0 4.0 10 6.0 25 15 – – 6.4 Adc.0 Vdc) @ TC = 25°C @ TC = 125°C VCE(sat) hFE Vdc Vdc – DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 1.5 @ TC = 25°C – 1. IB = 40 mAdc) (IC = 1. IB = 0.36 0.6 – OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA.3 @ TC = 125°C – 0. VEB = 0) Collector Cutoff Current (VCE = 500 V.2 Adc) @ TC = 25°C @ TC = 25°C VBE(sat) Collector–Emitter Saturation Voltage (IC = 0.4 Adc.0 Adc) (IEC = 0.0 1. f = 1 MHz) DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1.6 1. VCE = 1. IB = 0) Collector Cutoff Current (VCE = Rated VCES.50 0.2 Adc) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 0. di/dt = 10 A/µs) @ TC = 25°C – 517 – (IF = 1.2 14 8. di/dt = 10 A/µs) @ TC = 25°C – 480 – http://onsemi.0 Vdc) @ TC = 25°C @ TC = 125°C (IC = 1.4 Adc.

5 – IC = 1 Adc IB1 = 0 0.3 – SWITCHING CHARACTERISTICS: Resistive Load (D.05 1.S. 10%.4 – µs Cross–over Time @ TC = 25°C @ TC = 125°C tc – – 275 350 350 – ns Fall Time @ TC = 25°C @ TC = 125°C tf – – 100 100 150 – ns @ TC = 25°C @ TC = 125°C ts – – 1.8 – – 1.5 Adc http://onsemi.4 – V DYNAMIC SATURATION VOLTAGE Dynamic y Saturation V l Voltage Determinated 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 IC = 0.0 Adc IB1 = 0.4 – – 0.7 – @ 3 µs @ TC = 25°C – 1.2 Adc IC = 0.2 2A VCC = 300 Vdc @ 1 µs @ TC = 25°C – 11.5 0 5 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton – – 225 375 350 – ns @ TC = 25°C @ TC = 125°C toff 0.45 1.0 2.5 1.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 1.2 Adc IB2 = 0.0 Adc.1 – – 3.com 409 .95 – – 1. VCC = 15 V.2 – µs @ TC = 25°C @ TC = 125°C tc – – 100 115 150 – ns Storage Time Storage Time Storage Time Cross–over Time IC = 0. L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tf – – 130 120 175 – ns @ TC = 25°C @ TC = 125°C ts 0.7 0.5 1.C.7 – µs Cross–over Time @ TC = 25°C @ TC = 125°C tc – – 110 100 175 – ns Fall Time @ TC = 25°C @ TC = 125°C tf – – 130 140 175 – ns @ TC = 25°C @ TC = 125°C ts 2.MJD18002D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCE(dsat) – 7.4 Adc IB1 = 40 mA VCC = 300 Vdc @ 1 µs @ TC = 25°C @ 3 µs @ TC = 25°C – 2.4 Adc.4 Adc IB1 = 40 mAdc IB2 = 0. IB1 = 40 mAdc IB2 = 200 mAdc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 1.2 Adc IB2 = 0. Pulse Width = 40 s) Turn–on Time Turn–off Time IC = 0.1 – µs @ TC = 25°C @ TC = 125°C ton – – 100 94 150 – ns @ TC = 25°C @ TC = 125°C toff 0. IB1 = 0.25 – µs SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V.

1 1 IC. Collector–Emitter Saturation Voltage 100 10 1 TJ = 125°C 0. DC Current Gain @ 1 V Figure 2.1 10 –20°C 0. Collector Saturation Region 10 10 IC/IB = 10 IC/IB = 5 VCE.1 1 IC.001 Figure 3.5 A 2 400 mA 1 10 1 25°C TJ = 125°C IC = 200 mA –20°C 0.001 0. VOLTAGE (VOLTS) VCE.com 410 .1 1 IC.1 1 IC. DC CURRENT GAIN VCE = 1 V TJ = 125°C 25°C 40 –20°C 20 80 TJ = 125°C 60 25°C 40 –20°C 20 0 0 0. COLLECTOR CURRENT (AMPS) Figure 4.01 0. VOLTAGE (VOLTS) TJ = 25°C 3 2A 1A 1. Collector–Emitter Saturation Voltage http://onsemi.01 0.001 0. COLLECTOR CURRENT (AMPS) 10 Figure 5.01 0.01 0. VOLTAGE (VOLTS) 0. VOLTAGE (VOLTS) VCE. BASE CURRENT (AMPS) 10 0.1 1 IB.01 0.1 0.1 1 IC. Collector–Emitter Saturation Voltage –20°C 0. COLLECTOR CURRENT (AMPS) 10 Figure 6. DC Current Gain @ 5 V 4 100 IC/IB = 20 VCE.001 25°C 0. DC CURRENT GAIN hFE.01 0.001 25°C 1 TJ = 125°C 0.MJD18002D2 Typical Static Characteristics 100 100 80 60 VCE = 5 V hFE. COLLECTOR CURRENT (AMPS) Figure 1.001 0. COLLECTOR CURRENT (AMPS) 10 0.1 0 0.

01 0.1 0.MJD18002D2 Typical Static Characteristics 10 10 IC/IB = 10 VBE. Base–Emitter Saturation Region IC/IB = 5 FORWARD DIODE VOLTAGE (VOLTS) VBE.4 0.6 . CAPACITANCE (pF) Cib (pF) TJ = 25°C f(test) = 1 MHz 2000 IBon = IBoff IC/IB = 10 VCC = 300 V PW = 40 s 1500 1000 500 IC/IB = 5 1 0 1 10 VR. Forward Diode Voltage Typical Switching Characteristics 1000 3000 TJ = 125°C TJ = 25°C 2500 100 Cob (pF) 10 t. Capacitance 0.1 25°C 0.3 IC. TIME (s) C.1 1 10 REVERSE EMITTER–COLLECTOR CURRENT (AMPS) Figure 9.1 1 IC. REVERSE VOLTAGE (VOLTS) 0. VOLTAGE (VOLTS) VBE. COLLECTOR CURRENT (AMPS) 10 Figure 8. Base–Emitter Saturation Region IC/IB = 20 Figure 10.1 100 Figure 11.7 1 1. COLLECTOR CURRENT (AMPS) Figure 12. VOLTAGE (VOLTS) IC/IB = 5 1 –20°C 25°C TJ = 125°C 1 –20°C 25°C TJ = 125°C 0. Resistive Switch Time. Base–Emitter Saturation Region IC/IB = 10 10 0.1 0.com 411 1.01 0.1 1 IC.001 Figure 7.001 0.001 0. ton http://onsemi.01 0.01 0. COLLECTOR CURRENT (AMPS) 10 0.1 0.1 1 IC. VOLTAGE (VOLTS) IC/IB = 20 1 –20°C 25°C TJ = 125°C 0. COLLECTOR CURRENT (AMPS) 10 10 1 VEC(V) = –20°C 125°C 0.

TIME (s) tfi.5 3 Figure 15.4 0. TIME (s) 4.6 0 Figure 13. VZ = 300 V LC = 200 H 1.5 1 IC. FALL TIME (ns) 800 400 IBon = IBoff.5 t. COLLECTOR CURRENT (AMPS) 1. VZ = 300 V LC = 200 H 600 IC = 1 A t.0 TJ = 125°C VCC = 300 V PW = 40 s 2. VCC = 15 V. FORCED GAIN 15 12 Figure 16. toff 1. Inductive Fall Time 6 9 hFE.1 0. Resistive Switch Time.0 1 1.5 0. Inductive Cross–Over Time http://onsemi.MJD18002D2 Typical Switching Characteristics 5.5 TJ = 25°C 2 IBon = IBoff. Inductive Switching. COLLECTOR CURRENT (AMPS) 0 1. TIME (s) 500 t. TIME (s) IBon = IBoff 4. FORCED GAIN 12 Figure 18. VCC = 15 V. tc & tfi @ IC/IB = 5 6 9 hFE.3 A 200 IC = 0.3 A 0 3 5 7 9 11 hFE.5 Figure 14. Inductive Storage Time 1000 1800 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IBon = IBoff. VZ = 300 V LC = 200 H 1200 IC = 1 A 600 IC = 0. VCC = 15 V.0 IC/IB = 10 3. VCC = 15 V.7 1 1.5 t. tsi @ IC/IB = 5 700 4 TJ = 125°C TJ = 25°C 600 TJ = 125°C TJ = 25°C IC/IBon = 5 IBon = IBoff. FORCED GAIN 13 0 15 3 Figure 17. VCC = 15 V. VZ = 300 V LC = 200 H 400 3 tc t.5 3 TJ = 125°C TJ = 25°C 5. TIME (s) 0.5 3.5 1 IC.3 IC.com 412 15 . Inductive Storage Time. COLLECTOR CURRENT (AMPS) 300 IBon = IBoff.5 2. VZ = 300 V LC = 200 H IC = 1 A 2 tfi 200 IC = 300 mA 1 100 0 0 0.0 IC/IB = 5 2.

TIME (s) 1200 tc 800 0. COLLECTOR CURRENT (AMPS) Figure 22. COLLECTOR CURRENT (AMPS) 50 1. tc CROSS–OVER TIME (ns) 2.2 t.4 TJ = 125°C TJ = 25°C 0 IC/IB = 10 0 0. TIME (s) t. COLLECTOR CURRENT (AMPS) 1.5 0 Figure 19.3 0.8 tfi 400 0. Inductive Switching Time. VZ = 300 V LC = 200 H 150 IBoff = IC/2.4 1. Inductive Switching Time. VZ = 300 V LC = 200 H 2. COLLECTOR CURRENT (AMPS) 1. Inductive Storage Time.5 1 IC. VZ = 300 V LC = 200 H IC/IB = 5 TJ = 125°C TJ = 25°C 1. tsi Figure 24.0 IB = 200 mA IB = 50 mA 1.5 .1 IC. VZ = 300 V LC = 200 H 250 t. Dynamic Saturation Voltage Measurements http://onsemi. tfi 0.6 IBon = IBoff. tsi 200 300 TJ = 125°C TJ = 25°C IBoff = IC/2.6 Figure 23.4 IBon = IBoff. VCC = 15 V. VZ = 300 V LC = 200 H TJ = 125°C TJ = 25°C IC/IB = 10 200 150 IC/IB = 5 100 100 IC/IB = 10 50 0 IC/IB = 5 0. VCC = 15 V.6 IB = 100 mA 1.5 0 Figure 21. TIME (s) IBoff = IC/2. TIME (s) t.2 1 0 0.8 IB = 500 mA 1.com 413 1.2 1. VCC = 15 V. tfi & TC @ G = 10 0. VCC = 15 V.4 0.2 2.8 hFE.MJD18002D2 Typical Switching Characteristics 1600 1. Inductive Storage Time.5 1 IC.7 1. Inductive Storage Time. VCC = 15 V.5 1 IC.5 Figure 20. FORCED GAIN 1.

Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W MTP8P10 VCE PEAK MTP8P10 MPF930 VCE RB1 MUR105 MPF930 +10 V IC PEAK 100 µF IB1 Iout IB A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W IB2 RB2 MTP12N10 1 µF -Voff http://onsemi.MJD18002D2 Typical Switching Characteristics 10 IC 9 90% IC tfi 8 tsi 7 6 10% Vclamp Vclamp 5 4 90% IB1 IB 3 10% IC tc 2 1 0 0 1 2 3 4 TIME 6 5 8 7 Figure 25.com 414 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 .

COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 27.MJD18002D2 VFR (1.1 VF tfr 6 IF 4 10% IF 2 10 10 s DC 1 1 ms 50 s 0.1 VF) Unless Otherwise Specified VF 10 8 VF 0.5 POWER DERATING FACTOR 2.01 0 0 2 4 6 8 10 10 Figure 26.5 IC. Second Breakdown limitations do not derate the same as thermal limitations.com 415 . TJ(pk) may be calculated from the data in Figure 30. Allowable current at the voltages shown on http://onsemi. Forward Bias Safe Operating Area 1 TC = 125°C Gain = 4 LC = 500 H 2 1. COLLECTOR–EMITTER VOLTAGE (VOLTS) 20 Figure 28.. Forward Bias Power Derating Figure 27 may be found at any case temperature by using the appropriate curve on Figure 29. Reverse Bias Safe Operating Area 40 60 80 100 120 TC. At any case temperatures. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. i. the transistor must not be subjected to greater dissipation than the curves indicate.8 0. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 0. high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased.e. tfr Measurement 1000 100 VCE. For inductive loads. TJ(pk) is variable depending on power level.6 Thermal Derating 0. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. COLLECTOR CURRENT (AMPS) 12 Second Breakdown Derating 0. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. CASE TEMPERATURE (°C) 140 160 Figure 29. COLLECTOR CURRENT (AMPS) 5 ms 1 s EXTENDED SOA VFRM IC.5 V 1 VBE(off) = –5 V 0.2 VBE = 0 V 0 0 0 200 1200 400 800 1000 600 VCE. The safe level is specified as a reverse biased safe operating area (Figure 28).4 0.5 VBE(off) = –1. The data of Figure 27 is based on TC = 25°C.

5 IF.01 t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk)RJC(t) DUTY CYCLE.MJD18002D2 r(t) TRANSIENT THERMAL RESISTANCE (NORMALISED) 1 0. BVCER 1 1.01 0.2 0.5 0.02 t1 0.01 0. Typical Thermal Response (ZJC(t)) for MJD18002D2 1100 440 BVCER (Volts) @ 10 mA 1000 di/dt = 10 A/s TC = 25°C 420 900 400 TJ = 25°C 800 380 360 700 600 340 BVCER(sus) @ 200 mA 320 500 400 300 10 100 1000 RBE () 10.com 416 2 .5 0.1 0. tfr http://onsemi.000 100. Forward Recovery Time.1 RJC(t) = r(t) RJC RJC = 5C/W MAX P(pk) 0. TIME (ms) Figure 30.05 0.1 1 10 100 1000 t. FORWARD CURRENT (AMPS) Figure 32. D = t1/t2 SINGLE PULSE 0.000 0 Figure 31.

On machines controlled by a computer. density and types of components on the board. The components on the board are then heated by conduction. and a figure for belt speed. these control settings make up a heating “profile” for that particular circuit board. Factors that can affect the profile include the type of soldering system in use. then distributes this energy to the components. For any given circuit board. because it has a large surface area. Figure 33 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. Because of this effect.com 417 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT . and the type of board or substrate material being used.MJD18002D2 TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. the circuit boards and solder joints tend to heat first. type of solder used. Typical Solder Heating Profile http://onsemi. the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. The operator must set temperatures for several heating zones. When this type of furnace is used for solder reflow work. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 33. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. The two profiles are based on a high density and a low density board. The circuit board. Taken together. This profile will vary among soldering systems but it is a good starting point. This profile shows temperature versus time. there will be a group of control settings that will give the desired heat pattern. the computer remembers these profiles from one operating session to the next. absorbs the thermal energy more efficiently.

low–power.165 4.0 Collector–Base Voltage Symbol 0.07 1.ON Semiconductor NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12. high–gain audio amplifier applications.011 Watts W/C TJ. 2001 April. Tstg –65 to +150 C 0.4 0.6 Operating and Storage Junction Temperature Range MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0. designed for low voltage. .5 WATTS .063 1.243 6.8 Collector–Emitter Voltage Value 0. • Collector–Emitter Sustaining Voltage — • • • • • • • VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Low Collector–Emitter Saturation Voltage — VCE(sat) = 0. 3 418 inches mm Publication Order Number: MJD200/D .191 Emitter–Base Voltage Unit 0.190 4. 2001 – Rev.0 Adc High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB CASE 369A–13 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ CASE 369–07 MAXIMUM RATINGS VCB 40 Vdc VCEO 25 Vdc VEB 8 Vdc Collector Current — Continuous Peak IC 5 10 Adc Base Current IB 1 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 12.75 Vdc (Max) @ IC = 2.172 0. .826 Rating  Semiconductor Components Industries. LLC.3 Vdc (Max) @ IC = 500 mAdc = 0.118 3.1 Watts W/C Total Device Dissipation @ TA = 25C* Derate above 25C PD 1.5 0.

VCE = 1 Vdc) (IC = 5 Adc.75 1. (3) fT = hfe• ftest. (2) Pulse Test: Pulse Width = 300 µs. Junction to Ambient* ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 25 — Vdc — — 100 100 — 100 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc. IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (2) (IC = 500 mAdc. IB = 1 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 5 Adc. IB = 1 Adc) VBE(sat) — 2. Duty Cycle  2%. f = 0.6 Vdc fT 65 — MHz Cob — — 80 120 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (3) (IC = 100 mAdc.5 Vdc Base–Emitter On Voltage (1) (IC = 2 Adc.8 Collector–Emitter Saturation Voltage (2) (IC = 500 mAdc.3 0. IB = 200 mAdc) (IC = 5 Adc. Junction to Case Thermal Resistance. TJ = 125C) ICBO Emitter Cutoff Current (VBE = 8 Vdc. (continued) http://onsemi. IE = 0) (VCB = 40 Vdc. VCE = 10 Vdc.1 MHz) MJD200 MJD210 *When surface mounted on minimum pad sizes recommended. VCE = 1 Vdc) VBE(on) — 1. VCE = 2 Vdc) hFE — 70 45 10 — 180 — — — — 0.MJD200 MJD210 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC RθJA 10 89.com 419 . IE = 0. IB = 50 mAdc) (IC = 2 Adc. IE = 0. ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc. IB = 0) Collector Cutoff Current (VCB = 40 Vdc. VCE = 1 Vdc) (IC = 2 Adc. Duty Cycle  2%.3 C/W Thermal Resistance. (1) Pulse Test: Pulse Width = 300 µs.

TEMPERATURE (°C) D1 MUST BE FAST RECOVERY TYPE. COLLECTOR CURRENT (AMPS) Figure 36.03 0. Turn–Off Time http://onsemi.1 0. e.03 0.02 0.3 0.3 0.2 0.01 0. 1N5825 USED ABOVE IB ≈ 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB ≈ 100 mA Figure 34.02 0.g.01 0. TIME (ns) PD. Turn–On Time Figure 37.5 5 0 0 TA (SURFACE MOUNT) tr.5 1 2 IC.5 TC 25 VCC +30 V 25 µs 20 RC +11 V 0 15 SCOPE RB -9 V 1 10 0. Switching Time Test Circuit 1K 10K td 500 300 200 5K 3K 2K t.05 0. COLLECTOR CURRENT (AMPS) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5 10 MJD200 MJD210 tf 10 0.1 0.MJD200 MJD210 2 1. Power Derating Figure 35.5 VCC = 30 V IC/IB = 10 TJ = 25°C 500 300 200 100 50 30 20 MJD200 MJD210 1 1 2 3 0. TIME (ns) 100 ts 1K 50 30 20 tr 10 5 3 2 D1 51 -4 V t.5 IC.05 0. POWER DISSIPATION (WATTS) TA 2.com 420 3 5 10 .2 0.: FOR PNP TEST CIRCUIT. tf ≤ 10 ns DUTY CYCLE = 1% TC RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 25 50 75 100 125 150 T.

5 25°C to 150°C θVB for VBE -55°C to 25°C -2 -2. “On” Voltage *APPLIES FOR IC/IB ≤ hFE/3 +1. COLLECTOR CURRENT (AMP) 2 3 5 Figure 38.5 0.07 0.3 0.7 1 0.07 0.1 IC.2 0.5 0.2 0.2 0.2 0.6 2 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.3 0.8 0.3 0.05 0.3 IC.1 5 0.07 0.2 0.7 1 IC.2 0.3 0.5 0.5 0 *θVC for VCE(sat) -55°C to 25°C -0.1 -55°C to 25°C 0.5 0.6 V.MJD200 MJD210 NPN MJD200 400 TJ = 150°C 25°C 200 hFE.5 0. VOLTAGE (VOLTS) V. DC CURRENT GAIN hFE. COLLECTOR CURRENT (AMP) 2 3 TJ = 150°C 200 25°C 100 80 -55°C 60 40 VCE = 1 V VCE = 2 V 20 0.2 0.7 1 IC. COLLECTOR CURRENT (AMP) Figure 40.3 0.7 1 IC.05 0.5 0. TEMPERATURE COEFFICIENTS (mV/°C) Figure 39.07 0.5 -55°C to 25°C -1 25°C to 150°C -1.5 +2 *APPLIES FOR IC/IB ≤ hFE/3 +1. COLLECTOR CURRENT (AMP) 2 3 VCE(sat) @ IC/IB = 10 0 0. COLLECTOR CURRENT (AMP) 5 2 3 5 3 5 +2.5 0.5 -1 -1.1 0.5 25°C to 150°C +1 +0.com 421 2 . DC CURRENT GAIN 400 PNP MJD210 -55°C 100 80 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.05 0.1 TJ = 25°C 1.5 +1 +0. COLLECTOR CURRENT (AMP) 0.5 0 25°C to 150°C θVC for VCE(sat) -0.2 0.07 0.05 0. VOLTAGE (VOLTS) 1.1 0.07 0.5 -2 θVB for VBE -2.4 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 1.7 1 2 3 5 +2. DC Current Gain 2 TJ = 25°C 1. TEMPERATURE COEFFICIENTS (mV/°C) θV.5 0. Temperature Coefficients http://onsemi.5 +2 θV.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.7 1 IC.

02 0.1 0. Case 369 may be ordered by adding a “–1” suffix to the device title (i. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.5 D = 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation..05 0.05 0.01 0.02 0.e.05 0.2 0. the transistor must not be subjected to greater dissipation than the curves indicate.1 0. MJD200–1) 5ms 5 3 2 TJ = 150°C 100µs 1ms 500µs 1 dc 0. TIME (ms) 5 10 P(pk) t1 t2 DUTY CYCLE.e. At high case temperatures. i.3 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 VCE. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.01 0.07 0.02 0.7 0.2 0. TJ(pk) may be calculated from the data in Figure 8.6 1 2 4 6 10 VR. TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD200 MJD210 1 0.5 1 2 t. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.com 422 20 40 . REVERSE VOLTAGE (VOLTS) Figure 43.01 0.TC = P(pk) θJC(t) 0. Capacitance http://onsemi.r(t). D = t1/t2 20 50 100 200 Figure 41.3 0.03 0 (SINGLE PULSE) 0.1 RθJC(t) = r(t) θJC RθJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 0. COLLECTOR CURRENT (AMP) 10 Cib 100 70 50 Cob MJD200 (NPN) MJD210 (PNP) 30 20 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 30 Figure 42. Active Region Safe Operating Area 200 TJ = 25°C C. CAPACITANCE (pF) IC.2 0.1 0.4 0. The data of Figure 42 is based on TJ(pk) = 150C.

) Derate above 25°C PD 1. low–power. .5 WATTS POWER TRANSISTOR DPAK CASE 369 STYLE 1 MARKING DIAGRAMS YWW MJD 2x3 ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Symbol Value Unit VCB 100 Vdc VCEO 100 Vdc VEB 7 Vdc Collector Current – Continuous – Peak IC 4 8 Adc Base Current IB 1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12. When surface mounted on minimum pad sizes recommended.com . LLC. 2001 – Rev.4 Watts 0.6 Vdc (Max) @ IC = 1. designed for low voltage. MJD253 (PNP) MJD243 is a Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi. 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Low Collector–Emitter Saturation Voltage – VCE(sat) = 0.0 Adc High Current–Gain – Bandwidth Product – fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage – ICBO = 100 nAdc @ Rated VCB 4 AMPERES 100 VOLTS 12.011 W/°C –65 to +150 °C Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Operating and Storage Junction Temperature Range TJ.3 Vdc (Max) @ IC = 500 mAdc = 0. high–gain audio amplifier applications. 4 423 Publication Order Number: MJD243/D . • Collector–Emitter Sustaining Voltage – • • • • • • • VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain – hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1. 2001 April.  Semiconductor Components Industries.5 0. .1 Watts W/°C Total Device Dissipation @ TA = 25°C (Note 1. Tstg YWW MJD 2x3 Y = Year WW = Work Week MJD2x3 = Device Code x = 4 or 5 MAXIMUM RATINGS Rating DPAK CASE 369A STYLE 1 ORDERING INFORMATION Device Package Shipping MJD243 MJD243–1 DPAK 75 Units/Rail MJD253 MJD243T4 DPAK 3000/Tape & Reel MJD253–1 DPAK 75 Units/Rail MJD253T4 DPAK 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value.MJD243 (NPN).

fT = hFE• ftest. VCE = 10 Vdc. IE = 0) Collector Cutoff Current (VCB = 100 Vdc. f = 0. Junction to Case Junction to Ambient (Note 2.MJD243 (NPN). 3.) (IC = 500 mAdc. TJ = 125°C) ICBO – – 100 100 nAdc µAdc Emitter Cutoff Current (VBE = 7 Vdc.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 – Vdc Collector Cutoff Current (VCB = 100 Vdc. VCE = 1 Vdc) hFE 40 15 180 – – – – 0.5 Vdc fT 40 – MHz Cob – 50 pF DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (Note 4.5 15 TA (SURFACE MOUNT) 1 10 TC 0. VCE = 1 Vdc) DC Current Gain (Note 3. MJD253 (PNP) PD.) (IC = 2 Adc.) (IC = 1 Adc. IB = 0) Collector–Emitter Saturation Voltage (Note 3.5 5 0 0 25 50 75 100 125 150 T. IE = 0. IE = 0.8 Vdc Base–Emitter On Voltage (Note 3.3 0. When surface mounted on minimum pad sizes recommended. TEMPERATURE (°C) Figure 1. Pulse Test: Pulse Width = 300 µs.5 25 2 20 1. http://onsemi. IC = 0) IEBO – 100 nAdc DC Current Gain (Note 3.) (IC = 100 mAdc.com 424 . POWER DISSIPATION (WATTS) TA TC 2. Duty Cycle  2%.) (IC = 200 mAdc. IB = 200 mAdc) VBE(sat) – 1. IB = 100 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (Note 3.1 MHz) 2. VCE = 1 Vdc) VBE(on) – 1. 4. ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc.) (IC = 10 mAdc. IB = 50 mAdc) (IC = 1 Adc. Power Derating THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ Characteristic Thermal Resistance.6 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 3.) Symbol Value Unit RθJC RθJA 10 89.) (IC = 500 mAdc.

500µs 5 2 100µs 1ms 1 5ms 0.2 0.1 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) r(t).07 0.05 0. D = t1/t2 20 50 100 200 .01 0.05 0.02 0.1 0. TC is variable depending on conditions. At high case temperatures. TJ(pk) may be calculated from the data in Figure 3.5 0. Active Region Maximum Safe Operating Area 1 0.MJD243 (NPN).01 0 (SINGLE PULSE) 0.1 0.com 425 10 P(pk) t1 t2 DUTY CYCLE.2 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0. TIME (ms) 5 Figure 3. Thermal Response http://onsemi..5 0.1 0.5 D = 0.2 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2.2 0.02 0.05 0. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150°C. COLLECTOR CURRENT (AMPS) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.03 0. i. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.TC = P(pk) θJC(t) 0.05 0.02 0. The data of Figure 2 is based on TJ(pk) = 150°C. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.e. MJD253 (PNP) IC.3 0. the transistor must not be subjected to greater dissipation than the curves indicate.02 RθJC(t) = r(t) θJC RθJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 1 2 t.7 0.01 dc 1 100 2 5 10 20 50 VCE.

0 IC.0 1. MJD253 (PNP) NPN MJD243 300 200 TJ = 150°C 200 VCE = 1. TEMPERATURE COEFFICIENTS (mV/ °C) Figure 5.06 0. COLLECTOR CURRENT (AMP) Figure 6.0 -1.1 IC.5 -2.04 0.0 V VCE = 2.0 IC.0 0.5 0 25°C to 150°C *θVC FOR VCE(sat) -55°C to 25°C -0.4 0.0 V IC/IB = 10 0.5 +2.4 0.0 0.0 5.0 4. DC CURRENT GAIN hFE. VOLTAGE (VOLTS) V.6 1.0 4.2 1.0 4.1 0.06 0.0 VBE(sat) @ IC/IB = 10 0.5 -2.2 0. COLLECTOR CURRENT (AMP) 0.2 0.0 V VCE = 2. VOLTAGE (VOLTS) 1.4 0.8 0.4 IC/IB = 10 0.0 θV.0 2.0 IC.06 4.com 426 .2 V.4 0.5 +1.4 0.4 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.6 0.06 4.5 +2.6 1.0 25°C -55°C 30 20 10 7. DC Current Gain 1.0 5.5 -1.1 -55°C to 25°C 0.04 0.MJD243 (NPN).2 0.4 1.0 +0.6 1.0 3.0 IC.0 IC.1 0.0 2.04 0.0 +0. COLLECTOR CURRENT (AMP) +2.0 5.0 25°C to 150°C θVB FOR VBE -2.0 V TJ = 150°C 100 70 50 0.5 0.4 0.1 -55°C to 25°C 0.8 VBE @ VCE = 1.04 0.5 0 *θVC FOR VCE(sat) -55°C to 25°C -0.04 0.0 2.6 0.2 0.2 VCE(sat) 0 0.06 0.0 Figure 4. Temperature Coefficients http://onsemi.0 -1.6 1.0 VCE = 1.2 1.5 +1.1 0.04 0.0 4.6 1. TEMPERATURE COEFFICIENTS (mV/ °C) θV.0 2.0 +2.2 VCE(sat) 0 0.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 0. DC CURRENT GAIN 500 PNP MJD253 25°C 100 70 50 -55°C 30 20 10 7.2 0. COLLECTOR CURRENT (AMP) 2. COLLECTOR CURRENT (AMP) 2.5 -1.06 0.0 25°C to 150°C 25°C to 150°C θVB FOR VBE -2.0 0. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 +1.0 0.0 V 0.6 TJ = 25°C 1. COLLECTOR CURRENT (AMP) 2.0 V hFE.4 5.0 0.

01 NPN MJD243 PNP MJD253 0.0 10 2.0% tr 100 0 -9. tf ≤ 10 ns DUTY CYCLE = 1.0 5.0 10 20 30 VR.1 IC.02 0.com 427 50 70 100 50 70 100 .2 0.g. COLLECTOR CURRENT (AMPS) 3 5 100 Cib 70 50 30 Cob 20 MJD243 (NPN) MJD253 (PNP) 10 1.3 0.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT. COLLECTOR CURRENT (AMPS) 10K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 TJ = 25°C C.05 0.0 7. CAPACITANCE (pF) t. e. MJD253 (PNP) VCC +30 V 1K RC 25 µs +11 V SCOPE RB t.2 0. TIME (ns) D1 51 tr. Capacitance http://onsemi.5 IC. Turn–Off Time Figure 10. REVERSE VOLTAGE (VOLTS) Figure 9. Switching Time Test Circuit 50 30 20 VCC = 30 V IC/IB = 10 TJ = 25°C 100 Cib 70 50 30 20 10 Cob 1 2 3 5 7 10 20 30 VR. TIME (ns) 5 200 5K 3K 2K 10 0.0 3. Capacitance 200 TJ = 25°C C. REVERSE VOLTAGE (VOLTS) Figure 11.1 1 2 0.MJD243 (NPN).3 0.02 0.05 0.03 0. CAPACITANCE (pF) ts 1K 500 300 200 100 tf NPN MJD243 PNP MJD253 0.0 V 500 300 200 -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE. REVERSE ALL POLARITIES 1 0. Turn–On Time Figure 7.03 0.5 1 2 0.01 3 Figure 8.

When this type of furnace is used for solder reflow work. and the type of board or substrate material being used. these control settings make up a heating “profile” for that particular circuit board. density and types of components on the board. Factors that can affect the profile include the type of soldering system in use. because it has a large surface area. Because of this effect. the computer remembers these profiles from one operating session to the next. The components on the board are then heated by conduction. and a figure for belt speed.com 428 STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 150°C 100°C 50°C STEP 6 VENT . Typical Solder Heating Profile http://onsemi. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. On machines controlled by a computer. there will be a group of control settings that will give the desired heat pattern. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. MJD253 (PNP) TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. absorbs the thermal energy more efficiently. For any given circuit board. This profile will vary among soldering systems but it is a good starting point.MJD243 (NPN). The two profiles are based on a high density and a low density board. the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. Taken together. the circuit boards and solder joints tend to heat first. The circuit board. This profile shows temperature versus time. then distributes this energy to the components. The operator must set temperatures for several heating zones. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170°C 160°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 12. type of solder used.

SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain–Bandwidth Product — fT = 2.  Semiconductor Components Industries.0 (1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. Junction to Case RθJC 6. 2001 – Rev. Both limits are applicable and must be observed. †Safe Area Curves are indicated by Figure 1.191 Symbol 0.4 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0. 2001 April.16 Watts W/C Total Power Dissipation (1) @ TA = 25C Derate above 25C PD 1. Junction to Ambient (1) RθJA 71.165 4.0 MHz (Min) @ IC = 500 mAdc CASE 369A–13 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Value Unit VCEO 60 Vdc Collector–Base Voltage VCB 70 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current IC 10 Adc Base Current IB 6 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD† 20 0. Tstg –55 to +150 C Symbol Max Unit Thermal Resistance.07 1.75 0.014 Watts W/C TJ.243 6.172 0.ON Semiconductor PNP Complementary Power Transistors MJD2955 NPN MJD3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. 4 429 inches mm Publication Order Number: MJD2955/D .6 0.063 1.25 C/W Thermal Resistance.826 Rating Characteristic 0. LLC.8 THERMAL CHARACTERISTICS 0.190 4.118 3.

TC = 150C) ICEX — — 0. IC = 0) IEBO — 0. VCE = 10 Vdc. f = 500 kHz) (1) Pulse Test: Pulse Width  300 µs. VCE = 4 Vdc) VBE(on) — 1.MJD2955 MJD3055 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 — Vdc Collector Cutoff Current (VCE = 30 Vdc. VCE = 4 Vdc) (IC = 10 Adc.5 Vdc. http://onsemi. IE = 0.02 2 Emitter Cutoff Current (VBE = 5 Vdc. IB = 0. IB = 0) mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 4 Adc. IB = 0) ICEO — 50 µAdc Collector Cutoff Current (VCE = 70 Vdc.3 Adc) VCE(sat) Vdc Base–Emitter On Voltage (1) (IC = 4 Adc.8 Vdc fT 2 — MHz DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 mAdc.1 8 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc. IB = 3. TC = 150C) ICBO — — 0. VEB(off) = 1.02 2 Collector Cutoff Current (VCB = 70 Vdc. VEB(off) = 1.4 Adc) (IC = 10 Adc.5 20 5 100 — — — 1. VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (1) (IC = 4 Adc. Duty Cycle  2%. IE = 0) (VCB = 70 Vdc.5 Vdc) (VCE = 70 Vdc.com 430 .

1 10 0.4 1.4 0. TIME (s) µ hFE.05 10 5 0.6 1 IC.5 0.7 0.01 TJ = 25°C VCC = 30 V IC/IB = 10 1 t.8 0.2 tf 0.5 25°C -55°C 50 30 20 0.3 0.1 VCE(sat) @ IC/IB = 10 0.02 1. Turn–On Time 4 6 5 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 TJ = 25°C 1 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0. COLLECTOR CURRENT (AMP) t.3 ts 1 2 3 5 0.07 0.2 1 2 5 10 0 0. VOLTAGE (VOLTS) 0.2 0. “On” Voltages.06 0. COLLECTOR CURRENT (AMP) 1 0. Turn–Off Time http://onsemi.4 0.7 0.2 0.1 0.1 0.4 0. COLLECTOR CURRENT (AMP) Figure 4. TIME (s) µ V.com 431 2 4 6 .2 0. DC Current Gain Figure 3. Power Derating 500 100 2 VCE = 2 V TJ = 150°C 0.03 0.5 15 TA SURFACE MOUNT 1 10 0.05 0.5 0.5 25 2 20 TC 1.5 0.5 5 0 0 25 50 75 100 125 150 T. TEMPERATURE (°C) Figure 1. POWER DISSIPATION (WATTS) TA TC 2.2 0.MJD2955 MJD3055 TYPICAL CHARACTERISTICS PD.02 0.2 tr 0.06 0.05 0.2 0.1 0. COLLECTOR CURRENT (AMP) IC.1 IC. DC CURRENT GAIN 300 200 0.3 0. MJD3055 Figure 5.6 td @ VBE(off) ≈ 5 V IC.07 0.6 1 2 Figure 2.

3 5ms 0.2 0. COLLECTOR CURRENT (AMP) D1 MUST BE FAST RECOVERY TYPE. COLLECTOR CURRENT (AMP) 10 5 3 2 TJ = 150°C 1 500µs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.1 0.03 P(pk) RθJC(t) = r(t) RθJC RθJC = 6.8 VBE @ VCE = 3 V -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCE(sat) @ IC/IB = 10 5 2 3 0.05 0. The data of Figure 9 is based on TJ(pk) = 150C.2 0.2 -9 V VBE(sat) @ IC/IB = 10 0.5 0. the transistor must not be subjected to greater dissipation than the curves indicate.5 0. TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 8.02 0. EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6.1) SECOND BREAKDOWN LIMIT 0.01 0.1 dc WIRE BOND LIMIT THERMAL LIMIT TC = 25°C (D = 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.01 0.2 0. “On” Voltages. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.05 0.1 0.2 0.03 0.1 SCOPE RB t1 t2 DUTY CYCLE.e.4 0 0.1 0.5 1 IC.MJD2955 MJD3055 2 TJ = 25°C 1. Thermal Response IC. At high case temperatures.3 0.03 0.6 FORWARD BIAS SAFE OPERATING AREA INFORMATION 1 2 20 4 6 10 VCE. eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 10 r(t).TC = P(pk) θJC(t) 0. i. VOLTAGE (VOLTS) VCC +30 V 25 µs RC +11 V 0 1.05 0. 100µs 1ms 0.com 432 . TJ(pk) may be calculated from the data in Figure 8. D = t1/t2 SINGLE PULSE 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 60 Figure 9. Switching Time Test Circuit D = 0.3 0.7 0.07 0. TC is variable depending on conditions.02 0.02 0.6 V.. MJD2955 1 0. Maximum Forward Bias Safe Operating Area http://onsemi.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .5 Figure 7. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. tf ≤ 10 ns DUTY CYCLE = 1% 0.5 1 2 3 5 t.01 0.02 D1 51 tr.3 0.01 0.05 0.

Preferred devices are recommended choices for future use and best overall value.12 Watts W/C Total Power Dissipation (Note 1. Tstg –65 to +150 C Rating Collector–Emitter Voltage 1 MJD3xx YWW DPAK CASE 369A STYLE 1 4 MJD3xx YWW 1 DPAK STRAIGHT LEADS CASE 369 STYLE 1 MJD3xx xx Y WW = Specific Device Code = 1. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 437 of this data sheet. 2001 – Rev. 1C. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ MARKING DIAGRAMS 4 MAXIMUM RATINGS Symbol MJD31 MJD32 MJD31C MJD32C Unit VCEO 40 100 Vdc Collector–Base Voltage VCB 40 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current – Continuous Peak IC 3 5 Adc Base Current IB 1 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 15 0. 2 433 Publication Order Number: MJD31/D . 2001 June.com Designed for general purpose amplifier and low speed switching applications.  Semiconductor Components Industries. LLC.56 0. MJD32.012 Watts W/C Operating and Storage Junction Temperature Range TJ. MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.) @ TA = 25C Derate above 25C PD 1. 2 or 2C = Year = Work Week 1. These ratings are applicable when surface mounted on the minimum pad size recommended. MJD31C (NPN).MJD31.

VCE = 4 Vdc) VBE(on) – 1. ftest = 1 MHz) fT 3 – MHz Small–Signal Current Gain (IC = 0.) hFE DC Current Gain (IC = 1 Adc. MJD32 MJD31C.8 Vdc Current Gain – Bandwidth Product (Note 4. VEB = 0) ICES – 20 µAdc Emitter Cutoff Current (VBE = 5 Vdc. IB = 375 mAdc) VCE(sat) – 1. http://onsemi. Junction to Ambient (Note 2. f = 1 kHz) hfe 20 – – DYNAMIC CHARACTERISTICS 3. MJD32 MJD31C.) RθJA 80 C/W TL 260 C Lead Temperature for Soldering Purposes 2.) (IC = 500 mAdc.) (IC = 30 mAdc. VCE = 4 Vdc) (IC = 3 Adc. Pulse Test: Pulse Width  300 µs. VCE = 10 Vdc. MJD31C (NPN). IB = 0) (VCE = 60 Vdc. IC = 0) IEBO – 1 mAdc 25 10 – 50 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 3. 4. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 40 100 – – ICEO – 50 µAdc Collector Cutoff Current (VCE = Rated VCEO. These ratings are applicable when surface mounted on the minimum pad size recommended.com 434 .3 C/W Thermal Resistance. IB = 0) Collector Cutoff Current (VCE = 40 Vdc. MJD32C ON CHARACTERISTICS (Note 3. MJD32. VCE = 4 Vdc) – Collector–Emitter Saturation Voltage (IC = 3 Adc.2 Vdc Base–Emitter On Voltage (IC = 3 Adc.5 Adc. fT = hfe• ftest. VCE = 10 Vdc.MJD31. MJD32C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance. Junction to Case RθJC 8. MJD32C Vdc MJD31. IB = 0) VCEO(sus) MJD31. Duty Cycle  2%.

DC Current Gain 0.03 3 tr @ VCC = 10 V 0.02 0.5 0. tf ≤ 10 ns DUTY CYCLE = 1% 50 75 100 T.03 0.5 1 0.7 1 3 0.7 1 0.7 0.02 0.5 0. MJD32C (PNP) TYPICAL CHARACTERISTICS VCC +30 V PD.05 0.3 0.5 0. MJD31C (NPN).07 0.7 1 IC.MJD31. COLLECTOR CURRENT (AMPS) IC. Switching Time Test Circuit 2 TJ = 150°C 100 25°C 70 50 -55°C VCE = 2 V 1 0.com 435 2 3 .05 Figure 3. Power Derating V. MJD32.01 0. POWER DISSIPATION (WATTS) TA TC 2.1/8 tf TJ = 25°C ts′ tf @ VCC = 30 V tf @ VCC = 10 V 0.2 tr @ VCC = 30 V 0.7 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0. VOLTAGE (VOLTS) RC 25 µs 0.1 IC.5 0.005 0. Turn–Off Time http://onsemi.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP.2 0. COLLECTOR CURRENT (AMPS) 1. COLLECTOR CURRENT (AMPS) 1. Turn–On Time TJ = 25°C 0.1 Figure 4.1 0.07 0.3 0. TIME (s) µ 300 D1 51 -9 V 500 hFE. TIME (s) µ 1 0.4 0.03 0.1 0.07 0.07 0.5 30 10 7 5 0.5 15 TA (SURFACE MOUNT) SCOPE TC 1 10 0.3 0. DC CURRENT GAIN RB 0 Figure 1.07 0.03 0.03 2 3 0.05 0.03 0.3 0.05 0.003 0. COLLECTOR CURRENT (AMPS) Figure 5.5 25 2 20 +11 V 1. e.3 0.5 5 0 0 25 tr.3 3 2 1 t.05 0.2 IB1 = IB2 IC/IB = 10 ts′ = ts .1 0.05 VCE(sat) @ IC/IB = 10 0 0.1 0. “On” Voltages Figure 6. t.6 IC/IB = 10 TJ = 25°C 0.2 0.g. TEMPERATURE (°C) 125 150 Figure 2.4 td @ VBE(off) = 2 V IC.2 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.

COLLECTOR CURRENT (AMPS) 10 5 3 2 1ms 1 0.2 RθJC(t) = r(t) RθJC RθJC = 8.5 0.1 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation.07 0.2 1A 3A 0.4 0 TJ = +25°C 200 CAPACITANCE (pF) VCE . BASE CURRENT (mA) 200 500 30 0.03 SINGLE PULSE 0. MJD32.2 0.7 0.5 0. REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 8.TC = P(pk) θJC(t) 0..e. 100µs 500µs dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO TC = 25°C SINGLE PULSE TJ = 150°C MJD31.3 r(t).5 1 10 2 3 5 VR. Thermal Response IC. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C. Active Region Safe Operating Area http://onsemi. the transistor must not be subjected to greater dissipation than the curves indicate. D = t1/t2 50 100 200 300 500 1k Figure 9.02 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. TIME (ms) 10 20 30 P(pk) t1 t2 DUTY CYCLE. TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7.01 0.2 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. MJD32 0.5 0.8 100 Ceb 70 50 0.6 IC = 0. At high case temperatures. MJD32C 5 7 10 20 30 50 70 100 150 3 VCE.5 2 MJD31C.02 0. MJD32C (PNP) 1 2 5 10 20 50 100 IB.01 1. MJD31C (NPN).33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .300 2 TJ = 25°C 1.2 0.03 0.com 436 .02 0.5 1 2 3 5 t. TJ(pk) may be calculated from the data in Figure 9. Capacitance D = 0.3 0.1 0.05 0. TC is variable depending on conditions.05 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) MJD31. i.2 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.1 0.01 0.1 0.3 0. Collector Saturation Region 1 0.05 0.3 A 1.05 0.03 0. The data of Figure 10 is based on TJ(pk) = 150C.3 0.1 1000 Ccb 0.01 0.

190 4.243 6.6 0.MJD31.063 1.118 3.172 inches mm ORDERING INFORMATION Device Package Shipping MJD31C DPAK 75 Units / Rail MJD31CRL DPAK 1800 Tape & Reel MJD31CT4 DPAK 2500 Tape & Reel MJD31C–1 DPAK Straight Leads 75 Units / Rail MJD31T4 DPAK 2500 Tape & Reel MJD32C DPAK 75 Units / Rail MJD32CRL DPAK 1800 Tape & Reel MJD32CT4 DPAK 2500 Tape & Reel MJD32C–1 DPAK Straight Leads 75 Units / Rail MJD32RL DPAK 1800 Tape & Reel MJD32T4 DPAK 2500 Tape & Reel http://onsemi.826 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.0 0. MJD32C (PNP) 0.8 0.07 1. MJD31C (NPN).165 4.com 437 .191 0. MJD32.

190 4.063 1. 2001 – Rev. VCE = 10 Vdc) *When surface mounted on minimum pad sizes recommended.1 mAdc hFE 30 240 — 0. IB = 0) 0.0 0.8 OFF CHARACTERISTICS DC Current Gain (IC = 50 mAdc. 2 438 Publication Order Number: MJD340/D .  Semiconductor Components Industries. Tstg –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance.33 C/W Thermal Resistance.5 AMPERE 300 VOLTS 15 WATTS Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) — VCEO(sus) 0.191 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) 0.ON Semiconductor NPN High Voltage Power Transistors MJD340 * DPAK For Surface Mount Applications MJD350 * PNP Designed for line operated audio output amplifier. Junction to Ambient* RθJA 80 C/W Lead Temperature for Soldering Purpose TL 260 C CASE 369A–13 CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0. IC = 0) IEBO — 0. 2001 April. Junction to Case RθJC 8.12 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.6 Collector–Emitter Sustaining Voltage (1) (IC = 1 mAdc.012 Watts W/C TJ.165 4. Duty Cycle  2%. (1) Pulse Test: Pulse Width  300 µs. 0.5 0.75 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 15 0. LLC.118 3. switchmode power supply drivers and other switching applications.07 1.5 A Rated Collector Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol Value Unit VCEO 300 Vdc Collector–Base Voltage VCB 300 Vdc Emitter–Base Voltage VEB 3 Vdc Collector Current — Continuous — Peak IC 0.172 ON CHARACTERISTICS (1) inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value.243 6. *ON Semiconductor Preferred Device • Lead Formed for Surface Mount Applications in Plastic Sleeves (No • • • • • SILICON POWER TRANSISTORS 0.1 mAdc Emitter Cutoff Current (VBE = 3 Vdc. IE = 0) ICBO — 0.826 Rating Characteristic Symbol Min Max Unit VCEO(sus) 300 — Vdc Collector Cutoff Current (VCB = 300 Vdc.56 0.

MJD340 MJD350 TYPICAL CHARACTERISTICS MJD340 300 VCE = 2 V VCE = 10 V TJ = 150°C 100 70 +100°C 50 +25°C 30 20 10 -55°C 1 2 3 5 7 10 20 30 50 IC. “On” Voltages http://onsemi. COLLECTOR CURRENT (mAdc) 70 100 Figure 1. DC CURRENT GAIN 200 0.4 VCE(sat) @ IC/IB = 10 0.com 439 500 200 300 500 .8 VBE(sat) @ IC/IB = 10 0. COLLECTOR CURRENT (mA) Figure 2.6 VBE @ VCE = 10 V 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC. VOLTAGE (VOLTS) hFE . DC Current Gain MJD340 1 TJ = 25°C V.

1 0. DC Current Gain r(t).33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) . D = t1/t2 50 100 200 300 500 1k . COLLECTOR CURRENT (mA) 0 500 5 7 10 Figure 3.4 IC/IB = 10 0.com 440 20 30 P(pk) t1 t2 DUTY CYCLE.2 VCE(sat) 20 30 200 300 50 70 100 IC.03 0.5 1 2 3 5 t.5 0.1 0.05 IC/IB = 5 RθJC(t) = r(t) RθJC RθJC = 8. VOLTAGE (VOLTS) 25°C 100 hFE . Thermal Response http://onsemi.2 0.02 0.02 0.7 0. DC CURRENT GAIN MJD350 1 70 -55°C 50 30 20 10 VCE = 2 V VCC = 10 V 5 7 10 VBE(sat) @ IC/IB = 10 0.05 0.01 SINGLE PULSE 0.6 VBE @ VCE = 10 V 0.MJD340 MJD350 MJD350 200 TJ = 150°C 1 TJ = 25°C 0.07 0.TC = P(pk) θJC(t) 0.1 0.01 0.3 0.01 20 30 50 70 100 IC. “On” Voltages D = 0.2 0.3 0.5 0.05 0. TIME (ms) 10 Figure 5. TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.8 V.2 0. COLLECTOR CURRENT (mA) 200 300 500 Figure 4.03 0.

COLLECTOR CURRENT (mA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. TEMPERATURE (°C) Figure 7.5 15 TA (SURFACE MOUNT) TC 1 10 0. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC is variable depending on conditions.5 25 PD.. 100 µs 500 300 200 500 µs 1 ms 100 50 30 20 dc 10 5 3 2 10 20 30 50 70 100 200 300 500 700 1000 VCE. POWER DISSIPATION (WATTS) 1 2 20 1. At high case temperatures. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. i.5 5 0 0 25 50 75 100 T. The data of Figure 6 is based on TJ(pk) = 150C.com 441 125 150 .MJD340 MJD350 1000 IC. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. the transistor must not be subjected to greater dissipation than the curves indicate.e. Active Region Safe Operating Area TA TC 2. TJ(pk) may be calculated from the data in Figure 5. Power Derating http://onsemi. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)  150C.

826 Symbol Rating Characteristic 0. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built–in Base–Emitter Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS MJD41C MJD42C Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 6 10 Adc Base Current IB 2 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0. 2001 April.165 4.  Semiconductor Components Industries.07 1. Junction to Case RθJC 6.118 3. 2001 – Rev. LLC.75 0. Junction to Ambient* RθJA 71. inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value.16 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.190 4.243 6.8 *These ratings are applicable when surface mounted on the minimum pad size recommended.4 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 369A–13 CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0. 3 442 Publication Order Number: MJD41C/D .25 C/W Thermal Resistance.063 1.191 THERMAL CHARACTERISTICS 0.014 Watts W/C TJ.172 0. Tstg –65 to +150 C Symbol Max Unit Thermal Resistance.ON Semiconductor NPN Complementary Power Transistors MJD41C * PNP MJD42C * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications.6 0.0 0.

5 Adc. IB = 600 mAdc) VCE(sat) — 1. IB = 0) ICEO — 50 µAdc Collector Cutoff Current (VCE = 100 Vdc.MJD41C MJD42C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 60 Vdc. IC = 0) IEBO — 0. Duty Cycle  2%.3 Adc. ftest = 1 MHz) fT 3 — MHz Small–Signal Current Gain (IC = 0. VCE = 4 Vdc) — Collector–Emitter Saturation Voltage (IC = 6 Adc. VEB = 0) ICES — 10 µAdc Emitter Cutoff Current (VBE = 5 Vdc. http://onsemi. (2) fT = hfe• ftest. VCE = 10 Vdc. VCE = 10 Vdc. IB = 0) ON CHARACTERISTICS (1) hFE DC Current Gain (IC = 0. VCE = 4 Vdc) VBE(on) — 2 Vdc Current Gain — Bandwidth Product (2) (IC = 500 mAdc. VCE = 4 Vdc) (IC = 3 Adc. f = 1 kHz) hfe 20 — — DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width  300 µs.5 Vdc Base–Emitter On Voltage (IC = 6 Adc.5 mAdc 30 15 — 75 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc.com 443 .

7 0.05 0. Power Derating 10 7 5 0.4 0.2 tr 0.2 0. TIME (s) µ 1. Turn–Off Time http://onsemi.06 0. VOLTAGE (VOLTS) RC 25 µs 4 6 . TIME (s) µ hFE . POWER DISSIPATION (WATTS) TYPICAL CHARACTERISTICS TA 2.6 1 2 4 0. e.2 0.3 0.05 0.6 0. DC CURRENT GAIN 300 200 0.com 444 6 tf 0.4 2 Figure 10.07 -55°C td @ VBE(off) ≈ 5 V 0.07 0.: MSB5300 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP.2 0.5 TC 25 2 20 VCC +30 V +11 V 1.06 0.1 0.5 4 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 1.3 0. DC Current Gain Figure 11.2 VCE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 0. Figure 8.06 D1 51 -9 V TA SURFACE MOUNT 25 SCOPE RB 0 TC T.06 TJ = 25°C VCC = 30 V IC/IB = 10 1 t. “On” Voltages Figure 13.1 0.3 0.5 5 0 0 50 tr.7 0. Turn–On Time 5 t.3 0. tf ≤ 10 ns DUTY CYCLE = 1% 75 100 125 150 Figure 9. COLLECTOR CURRENT (AMP) 2 0 0.8 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE.1 0.02 0.1 1 IC.03 0.1 VBE(sat) @ IC/IB = 10 0.2 0.4 1 0.1 6 0. COLLECTOR CURRENT (AMP) TJ = 25°C 0.6 IC.5 25°C 30 20 0.5 15