RF Manual 14th edition

Application and design manual for High Performance RF products May 2010

High Performance RF for the most demanding applications

NXP’s RF Manual makes design work much easier
NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power signal conditioning & high speed data converters.

What’s new? This RF Manual features new applications, such as: point-to-point communication, radar, VSAT, MoCA (Multimedia over Coax Alliance), NIM (Network Interface Module for TV reception), Digital Satellite Set-top-box RF (Plasma) lighting, medical imaging, microwave furnaces and Mobile platforms. And we describe thoroughly new developments in our main technologies SiGe:C QUBiC and LDMOS. New products families have been added to our broad portfolio, like: Quad pin diodes, 6th and 7th generation SiGe:C wideband transistors, variable gain amplifiers, LNA's for wireless infrastructures, LNA’s and MOSFETs for STB and a full line-up of high speed converters. And of course the latest additions and improvements are included: GPS LNA’s, medium power amplifiers, LO generators and CATV modules. Our base station offering has grown extensively by e.g. a comprehensive set of best in class Doherty amplifier designs, a broad selection of medium power, variable gain and low noise amplifiers and our JESD204A-compliant, high speed DACs and ADCs. Last but not least, we expanded our cross reference list with 40% to over 1.200 items. A strong foundation in RF Shipping billions of RF products annually, NXP is a true industry leader in high performance RF. Our RF small signal products are widely installed in satellites, cellular base stations, mobile devices, cars, TV tuners and CATV. We’re a leader in high power RF for cellular infrastructure, broadcast/ISM and Radar applications. With our new, serialized signal processing architectures with JESD204A-compliant high-speed converters, we are enabling a transition to more compact, higher performance systems. Our IP extends far beyond our packaged products to our patented high performance processes. From high-power LDMOS for power amplifiers, CMOS processes for our high-speed converters, and the most advanced SiGe:C (QUBiC4) for RF small signal transistors, MMICs and ICs. Our in-house process and technology portfolio sets us apart. What’s more, producing over 65 million units per day, we control our front- and back-end manufacturing quality and cost structures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants in Thailand, Taiwan and China. Our processses are all AEC100 certified for supply into the most quality-conscious customers and applications.

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NXP Semiconductors RF Manual 14th edition

NXP’s firsts in RF 1963 – First transistors and diodes on 0.75 inch wafers 1964 – First RF wideband transistor with 1.5 GHz max 1970 – BFR90, a 5 GHz RF wideband transistor 1978 – BFQ33, a 14 GHz RF wideband transistor 1989 – Output matching in common emitter base station transistors 1992 – Highest power broadcast bipolar devices 1996 – Highest performance 2 GHz LDMOS 2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers 2006 – Fully integrated Doherty transistors 2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN 2008 – High speed data converters based on JESD204A standard 2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz) 2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology

“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual, and I’m convinced that you’ll find the 14th edition even more useful in your daily design work.”

Kind regards,

John Croteau
Sr. Vice President & General Manager Business Line High Performance RF

RF Manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 14th edition

5

Contents
1.1 Mobile Communication Infrastructure ________________________________________________________________ 9 1.1.1 Base stations (all cellular standards and frequencies) _____________________________________________ 9 1.1.2 Point-to-point _______________________________________________________________________________ 12 1.2 Microwave & mmWave ____________________________________________________________________________ 14 1.2.1 VSAT _______________________________________________________________________________________ 14 1.2.2 Microwave products for Avionics, L- and S-band Radar applications _______________________________ 16 1.3 Fixed Communication Infrastructure ________________________________________________________________ 18 1.3.1 CATV optical (optical node with multiple out-ports) _____________________________________________ 18 1.3.2 CATV electrical (line extenders) _______________________________________________________________ 19 1.3.3 Broadcast / ISM (industrial, scientific & medical) ________________________________________________ 20 1.4 TV, NIM (STB) and Satellite_________________________________________________________________________ 21 1.4.1 Network interface module (NIM) for TV reception _______________________________________________ 21 1.4.2 Basic TV tuner _______________________________________________________________________________ 23 1.4.3 MoCA (Multimedia over Coax Alliance) _________________________________________________________ 24 1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users ____________________________________ 25 1.4.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV ________________________________ 26 1.4.6 Digital Satellite Set Top Box (high definition) ____________________________________________________ 27 1.5 Consumer Mobile _________________________________________________________________________________ 28 1.5.1 Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB / LTE) ___________________________ 28 1.5.2 A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent) ____________________________________ 29 1.5.3 2-way radio / family radio system ______________________________________________________________ 30 1.5.4 DECT front-end / DECT in-house base station __________________________________________________ 31 1.6 Automotive & Industrial ___________________________________________________________________________ 32 1.6.1 Active antenna ______________________________________________________________________________ 32 1.6.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ______ 33 1.6.3 Tire pressure monitoring system_______________________________________________________________ 34 1.6.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _________________________________________ 35 1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee __________________________________ 36 1.6.6 RF Plasma Lighting___________________________________________________________________________ 37 1.6.7 Medical Imaging_____________________________________________________________________________ 38 1.6.8 RF Microwave furnace application _____________________________________________________________ 39 2. Technologies & focus products ____________________________________________________________________ 40 2.1 Get the fastest TTFF with GPS LNAs that use proven QUBiC4X SiGe:C ____________________________ 40 2.2 Always the right match with our latest 6th and 7th generation SiGe:C wideband transistors ____________ 41 2.3 NXP Medium-Power MMICs BGA7xxx for broadband applications ________________________________ 42 2.4 Low-noise LO generators for microwave & mmWave radios _______________________________________ 43 2.5 Complete satellite portfolio for all LNB architectures ____________________________________________ 44 2.6 VSAT, 2-way communication via satellite ________________________________________________________ 46 2.7 NXP CATV C-family for the Chinese SARFT standard ____________________________________________ 48 2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C ______________________________ 51 2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ____________________ 52 2.9 Doherty amplifier technology for state-of-art wireless infrastructure _______________________________ 54 2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN _________________________ 56 2.11 Looking for the leader in SiGe:C? You've just found us! __________________________________________ 57 2.12 Microwave / Radar ___________________________________________________________________________ 59 2.13 Digital broadcasting at its best ________________________________________________________________ 61

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NXP Semiconductors RF Manual 14th edition

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Product portfolio _________________________________________________________________________________ 3.1 New products _______________________________________________________________________________ 3.2 RF diodes ___________________________________________________________________________________ 3.2.1 Varicap diodes ______________________________________________________________________________ 3.2.2 PIN diodes _________________________________________________________________________________ 3.2.3 Band-switch diodes __________________________________________________________________________ 3.2.4 Schottky diodes _____________________________________________________________________________ 3.3 RF Bipolar transistors ________________________________________________________________________ 3.3.1 Wideband transistors ________________________________________________________________________ 3.4 RF ICs ______________________________________________________________________________________ 3.4.1 MMICs _____________________________________________________________________________________ 3.4.2 Low noise LO generators for VSAT and general microwave applications ____________________________ 3.5 RF MOS transistors _________________________________________________________________________ 3.5.1 JFETs _____________________________________________________________________________________ 3.5.2 MOSFETs __________________________________________________________________________________ 3.6 RF Modules ________________________________________________________________________________ 3.6.1 CATV Reverse Hybrids _______________________________________________________________________ 3.6.2 CATV Push-Pulls ____________________________________________________________________________ 3.6.3 CATV power doublers _______________________________________________________________________ 3.6.4 CATV optical receivers _______________________________________________________________________

62 62 64 64 65 67 67 68 68 71 71 73 74 74 76 78 78 78

4.

5.

6.

7. 8. 9.

79 79 3.7 RF power transistors ________________________________________________________________________ 80 3.7.1 Base Station transistors _____________________________________________________________________ 80 3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors ______________________________ 83 3.7.3 Microwave LDMOS RF power transistors _______________________________________________________ 84 3.8 High Speed Data Converters ________________________________________________________________ 85 3.8.1 High Speed ADCs ___________________________________________________________________________ 85 3.8.2 High Speed DACs ___________________________________________________________________________ 85 Design support __________________________________________________________________________________ 86 4.1 S-Parameters _______________________________________________________________________________ 86 4.2 Simulation models ___________________________________________________________________________ 86 4.2.1 Spice models ______________________________________________________________________________ 86 4.2.2 RF Power device simulation models ____________________________________________________________ 87 4.3 Application notes ____________________________________________________________________________ 87 4.4 Demo boards _______________________________________________________________________________ 87 4.4.1 IC, MMIC and SiGe:C transistor demo boards ___________________________________________________ 87 4.4.2 RF power transistor demo boards _____________________________________________________________ 87 4.4.3 High Speed Converter demo boards ___________________________________________________________ 88 4.5 Samples of products in development ___________________________________________________________ 88 4.6 Samples of released products ________________________________________________________________ 88 4.7 Datasheets _________________________________________________________________________________ 88 4.8 Design-in support ___________________________________________________________________________ 88 4.9 NEW: interactive selection guides ____________________________________________________________ 88 Cross-references & replacements __________________________________________________________________ 89 5.1 Cross-references: Manufacturer types versus NXP types _________________________________________ 89 5.2 Cross-references: NXP discontinued types versus NXP replacement types _________________________ 98 Packing and packaging information _______________________________________________________________ 100 6.1 Packing quantities per package with relevant ordering code _____________________________________ 100 6.2 Marking codes list __________________________________________________________________________ 102 Abbreviations ___________________________________________________________________________________ 104 Contacts and web links __________________________________________________________________________ 105 Product index ___________________________________________________________________________________ 106

NXP Semiconductors RF Manual 14th edition

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NXP Semiconductors RF Manual 14th edition

1.1 Mobile Communication Infrastructure

1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design': document number: 9397 750 16837. Application diagram
LPF IQ MIXER MIXER VGA 90 TX BPF MPA

SER I-DAC SIGNAL PROCESSING

RF POWER BOARD
HPA

PLL

PLL VCO
LPF

0

ISOLATOR

SER Q-DAC
BPF

MIXER VGA mixer

ANTENNA TX/RX

INTERFACING

SER ADC PLL VCO µC
LPF VGA

TOWER MOUNTED AMPLIFIER
IQ MIXER MIXER LNA 90 DUPLEXER

SER I-ADC

µC
RX BPF LNA

PLL

PLL VCO
LPF VGA

0

SER Q-ADC

MIXER

Processing RF small signal

Dataconverters RF power
brb411

Above diagram shows a simplified base station block diagram with its two main branches: transmit (upper half, TX) and receive (lower half, RX). Walking along the transmit branch, after the interfacing into the signal processing part, one first encounters the digital to analog converters (DAC), which include a serial interface in our case (SER). The transmit signal then passes a low-pass filter block (LPF) and is being upconverted in the IQ mixer stage. Next follows a variable gain amplifier (VGA), a bandpass filter (TX BPF) and the power amplifier board with a medium power amplifier- (MPA) and the high power amplifier (HPA)stages. An isolater and duplexer are the last two basic blocks up to the antenna. A feedback line is provided to monitor the transmitted signal. The TX signal is “sampled”, down-converted in a mixer, amplified (VGA), bandpassfiltered (BPF) and converted to digital by an analog to digital converter (SER ADC), with a high speed serial interface. The main RX branch of the base station starts at the duplexer, is amplified by a low noise amplifier (LNA) and band pass filtered (RX BPF) very close to the antenna in a “tower mounted amplifier”. A further amplifier (LNA) then feeds into the down conversion mixer; the I and Q base band signals are further amplified (VGA) and via a low pass filter (LPF) fed into the respective ADC’s (SER I-ADC and SER Q-DAC). The serial interface in turn connects to the base band signal processing unit. The synchronizing “heartbeats” in the diagram are controlled by phase locked loops (PLL) with or without a voltage controlled oscillator (VCO). Microcontrollers (μC) provide local control and monitoring functions within the building blocks. The colored building blocks can all be sourced by NXP and are discussed in the following paragraphs. NXP Semiconductors RF Manual 14th edition 9

Recommended products
Function Sub function driver MMIC driver final final final final final MMIC driver integrated Doherty driver final final final driver final driver final Freq band (MHz) 728-768 869-894 925-960 1805-1880 1930-1990 2110-2170 2300-2400 2500-2700 3400-3600 PPEAK (dBm) 58 58 58.9 58.2 58 58 49.5 52.5 51 frange MHz 10 - 2200 700 - 1000 700 - 1000 688 - 1000 1800 - 2000 1805 - 1880 1805 - 1880 1805 - 1880 2100 - 2200 2010 - 2025 2110 - 2170 2000 - 2200 2110 - 2170 2300 - 2400 2500 - 2700 3400 - 3600 Type BLF6G21-10G BLM6G10-30 BLF6G10-160RN BLF6G10-200RN BLF6G20-230PRN BLF7G20L(S)-200 BLF7G20L(S)-250P BLF7G20L(S)-300P BLM6G22-30 BLD6G21L-50 BLD6G22L-50 BLF7G22L-130 BLF6G22-180PN BLF6G22-180RN BLF7G22L(S)-200 BLF7G24L(S)-100(G) BLF6G27-10 BLF6G27-135 BLF7G27L-200P BLF6G38-10 BLF6G38-100 Gain (dB) 19 19 22 16 15.5 15 14.5 14 11.5 Drain Eff. (%) 47 46 44 42 37 40 43 38 32 PL(AV) W 0.6 2 32 40 65 50 70 85 2 8 8 30 50 40 55 24 2 20 20 2 18.5

ηD
% 15 11.5 27 28.5 32 30 30 30 9 42 38 32 27.5 25 17 18 20 22.5 25 20 21.5

Gp dB 18.5 29 22.5 20 17.5 17 17 17 29.5 13.5 13.3 18.5 17.5 16 28 28 19 16 16.5 14 13

Mode of operation WCDMA. TD-SCDMA. GSM. EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA TD-SCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WiMAX WiMAX WiMAX WiMAX WiMAX

HPA (high power amplifier - single transistors)

Function

POUT-AVG (dBm) 50 50 50 50 50 50 42 44.5 43

VDS (V) 32 32 32 28 32 32 28 28 28

Type SYM SYM SYM / MMPP SYM / MPPM SYM SYM SYM SYM SYM

Main transistor BLF6G10LS-200RN BLF6G10-200RN 1/2 BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN 1/2 BLF7G27-75P 1/2 BLF6G27-150P BLF6G38-50

Peak transistor BLF6G10LS-200RN BLF6G10-200RN 1/2 BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN 1/2 BLF7G27-75P 1/2 BLF7G27-150P BLF6G38-50

HPA (high power amplifier - Doherty designs)

Product highlight: high power transistor BLF7G20L(S)-300P
NXP's LDMOS Gen6 and Gen7 enable the world's most efficient base station designs by combining very high intrinsic (Si technology) and extrinsic (amplifier design) efficiencies. Gen7 is specifically designed for Doherty amplifiers.

` ` ` ` `

Features

unrivalled ruggedness very consistent device performance highest Doherty amplifier efficiencies to date 300 W peak power; 35 W average power in push pull package low thermal resistance design for very reliable operation

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NXP Semiconductors RF Manual 14th edition

Function Discrete attenuator

Product RF diode PIN diode

Package SOT753 SOT753 Various^ Package

Type BAP64Q BAP70Q BAP64 Type BFU725F/N1 BGU7051 BGU7052 BGU7053 BGU7054 Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133*

Function

Product RF transistor SiGe:C transistor

SOT343F

LNA (low noise amplifier) & Mixer

RF MMIC

SiGe:C MMIC

SOT650

Function VGA (variable gain amplifier)

Product

Package

MMIC

SiGe:C MMIC

SOT617

Function

Product MMIC

MPA (medium power amplifier)

MMIC

SiGe:C MMIC

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 SOT908

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = SOD523, SOD323, SOT23 & SOT323

Function

Sub function

Max. sampling frequency 650 Msps 160 Msps 125 Msps 750 Msps 80 Msps

Type DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D750 ADC1207S080 ADC1415S125 ADC1410S125 ADC1412D125 ADC1413D125

# of bits 14 14 14 14 12 14 14 14 14

Interface LVCMOS LVCMOS LVCMOS JESD204A LVCMOS LVCMOS&LVDS DDR LVCMOS&LVDS DDR LVCMOS&LVDS DDR JES204A

dual channel DAC

Dataconverters single channel ADC

125 Msps 125 Msps 125 Msps 125 Msps

dual channel ADC

Product highlight: medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.

` ` ` ` ` ` `

Features

400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 V / 5 V single supply operation Simple quiescent current adjustment 1 μA shutdown mode

NXP Semiconductors RF Manual 14th edition

11

1.1.2 Point-to-point
Application diagram
INDOOR UNIT POWER SUPPLY PLL VCO
0 90

OUTDOOR UNIT
VGA1 MPA IF VGA1 MPA PA

BPF
BUF

DIGITAL SIGNAL PROCESSOR

REF

MPX

to/from IDU

MPX

REF

SYNTH PLL

PLL

ANTENNA

PMU

PMU

PLL VCO DATA INTERFACE

0

90

ANALOG VGA

VGA2

LNA

IF1

LNA2 LNA1

LPF
VGA2 VGA1 brb406

Recommended products Indoor unit
Function VGA 1 (variable gain amplifier) Function Product MMIC SiGe:C MMIC Package SOT617 Type BGA7202* BGA7203* BGA7204* Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BGU7003 BGU7051* BGU7052* BGU7053* BGU7054* BFU725F/N1 BFG425W BFG424W BFG325/XR Type BGA7350* SOT617 BGA7351*

Product MMIC

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908

MPA (medium power amplifier)

MMIC SiGe:C MMIC

Function

Product IF gain block SiGe:C MMIC General purpose wideband amplifiers

Package

IF MMIC

SOT363

Function

Product SiGe:C MMIC SiGe:C transistor RF transistor Wideband transistor

Package SOT891 SOT650

RF MMIC LNA

SOT343F SOT343R SOT143R Package

Function VGA 2 (variable gain amplifier)

Product MMIC SiGe:C MMIC

* = check status at 3.1 new products, as this type has not been released yet for mass production.

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NXP Semiconductors RF Manual 14th edition

Outdoor unit
Function VGA 1 (variable gain amplifier) Product SiGe:C MMIC Package Type BGA7202* MMIC SOT617 BGA7203* BGA7204* Product MMIC MPA (medium power amplifier) Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Function Buffer Function LNA 2 MMIC Function Product Product RF transistor Product RF transistor SiGe:C transistor SiGe:C MMIC SiGe:C transistor Package SOT343F Package SOT343F SOT891 Package Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* Type BFU725F/N1 Type BFU725F/N1 BGU7003 Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Function VGA 2 (variable gain amplifier) Product SiGe:C MMIC Package Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BFG424W BFG425W BFU725F/N1 Type BB202

MMIC

SOT617

Function

Function PLL

Product RF IC SiGe:C IC

Package SOT616

MMIC SiGe:C MMIC

Function Oscillator

Product RF transistor Wideband transistor SiGe:C transistor

Package SOT343R SOT343F Package Varicap diode SOD523

Function Synth

Product RF diode

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2

IF gain block IF 1

SiGe:C MMIC SOT363 General purpose wideband amplifiers

MMIC

Product highlight: medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a lowcost ultra small SOT908 leadless package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.

` ` ` ` ` ` `

Features

400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 V / 5 V single supply operation Simple quiescent current adjustment 1 μA shutdown mode

NXP Semiconductors RF Manual 14th edition

13

1.2 Microwave & mmWave

1.2.1 VSAT
Application diagram

INDOOR UNIT POWER SUPPLY
IF IF1

OUTDOOR UNIT
PA

MOD
BUF

DIGITAL SIGNAL PROCESSOR

REF

MPX

to/from IDU

MPX

REF

SYNTH

PLL OMT ANTENNA

PMU

PMU

´N

PLL

BUF

DATA INTERFACE

LNA

IF2

IF1

LNA2

LNA1 brb405

DEMOD

Recommended products VSAT Indoor unit
Function Product IF gain block IF MMIC General purpose wideband amplifiers SiGe:C MMIC SOT363 Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BFU725F/N1 BFG425W BFG424W BFG325/XR

Function LNA

Product SiGe:C transistor RF transistor Wideband transistor

Package SOT343F SOT343R SOT143R

14

NXP Semiconductors RF Manual 14th edition

Recommended products VSAT Outdoor unit
Function Product Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Type BFU725F/N1 BGU7003 Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BFG424W BFG425W BFU725F/N1 Type BB202 Type BFU725F/N1

IF gain block IF

SiGe:C MMIC SOT363 General purpose wideband amplifiers

MMIC

Function LNA2

Product RF transistor MMIC Product PLL RF IC SiGe:C IC SiGe:C transistor SiGe:C MMIC

Package SOT343F SOT891 Package SOT616

Function

Function Oscillator

Product RF transistor Wideband transistor SiGe:C transistor

Package SOT343R SOT343F Package Varicap diode SOD523 Package SiGe:C transistor SOT343F

Function Synth Function Buffer

Product RF diode Product RF transistor

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2

Product highlight: TFF1003HN
The TFF1003HN is a Ku band frequency generator intended for low phase noise Local Oscillator (LO) circuits for Ku band VSAT transmitters and transceivers. The specified phase noise complies with IESS-308 from Intelsat.

` ` ` `

Features

Phase noise compliant with IESS-308 (Intelsat) LO generator with VCO range from 12.8 GHz to 13.05 GHz Input signal 50 MHz to 815 MHz Divider settings 16, 32, 64, 128 or 256

NXP Semiconductors RF Manual 14th edition

15

1.2.2 Microwave products for Avionics, L- and S-band Radar applications
Application diagram

RF signals

video, timing, bias voltage, control and data I-f signals RF small signal RF power PLL VCO local oscillator
mixer VGA MPA

RF POWER BOARD
HPA

ISOLATOR

ANTENNA DRIVE

duplexer

DISPLAY AND CONTROL

WAVEFORM GENERATOR control and timing video DETECTOR

local oscillator signal

PLL VCO

mixer

IF amplifier

LNA

brb410

Recommended products
Application Avionics power transistors Function driver final final final driver final final final driver driver driver final final final final final final final final Name BLL6H0514-25 BLA6H0912-500 BLA6H1011-600 BLA6G1011-200R BLL6H0514-25 BLL6H1214-500 BLL6H1214L(S)-250 BLL6HL(S)0514-130 BLS6G2731-6G BLS6G3135-20 BLS6G3135S-20 BLS6G2731-120 BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135S-120 BLS7G2933P-200 BLS7G2731P-200 BLS6G2731S-130 Package SOT467C SOT634A SOT539A SOT502A2 SOT467C SOT539A SOT502 SOT1135 SOT975C SOT608A SOT608B SOT502A SOT502B SOT922-1 SOT502A SOT502B pallet pallet SOT922 MHz 500 - 1400 960 - 1215 1030 - 1090 1030 - 1090 500 - 1400 1200 - 1400 1200 - 1400 500 - 1400 2700 - 3100 3100 - 3500 3100 - 3500 2700 - 3100 2700 - 3100 2900 - 3300 3100 - 3500 3100 - 3500 2900 - 3300 2700 - 3100 2700 - 3100 W 25 (min) 450 600 200 25 (min) 500 (min) 250 130 6 20 20 120 120 130 120 120 200 200 130 % 50 50 52 65 50 50 55 50 33 45 45 48 48 47 43 43 45 45 49 dB 19 17 19 20 19 17 17 18 15 15.5 15.5 13.5 13.5 12.5 11 11 11 11 13 V 50 50 50 28 50 50 50 50 32 32 32 32 32 32 32 32 32 32 32 PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB Pulsed RF Pulsed RF PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB Pulsed RF

L-Band power transistors

S-band power transistors

16

NXP Semiconductors RF Manual 14th edition

Function Discrete attenuator

Product RF diode PIN diode

Package Various^

Type BAP64

^ = SOD523, SOD323, SOT23 & SOT323 Function LNA (low noise amplifier) & Mixer Function Product RF transistor SiGe:C transistor Package SOT343F Type BFU725F/N1

Product

Package

Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 Type TFF1003HN TFF1007HN* TFF11xxxHN*^ Type BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* Type BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* BGA6589

SiGe:C MMIC IF amplifier MMIC General purpose wideband amplifiers Function PLL/VCO LO generator Function VGA (variable gain amplifier) Product RF IC SiGe:C IC Package SOT616 SOT363

Product

Package

MMIC

SiGe:C MMIC

SOT617

Function

Product

Package SOT908 SOT89 SOT908 SOT89 SOT908 SOT908 SOT89

MPA (medium power amplifier)

MMIC

SiGe:C MMIC

MMIC

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2

Product highlight:
The BLS6G2933P-200 is the first LDMOS based, industry standard pallet available on the market. This pallet offers more than 40% efficiency includes the complete bias network and can be used as direct replacement for current solutions.

` ` ` ` `

Features

P1 dB> 200 W Efficiency > 40% Industry standard footprint 50 Ω in/out matched for entire bandwidth Lightweight heat sink included

NXP Semiconductors RF Manual 14th edition

17

1.3 Fixed Communication Infrastructure
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.

1.3.1 CATV optical (optical node with multiple out-ports)
Application diagram

RF power amplifier

duplex filter coax out port 1

RF forward receiver fiber in

RF preamplifier

splitter

coax out port 2

coax out port 3

coax out port 4
bra852

Recommended products
Function RF forward receiver Function RF pre-amplifier Function RF power amplifier Product Forward path receiver Product Push-Pulls Power doubler Product Power doublers Frequency 870 MHz Package SOT115 SOT115 SOT115 Gain (dB) 18 - 19 21 - 22 18.2 - 18.8 Gain (dB) 20.5 - 22.5 23 - 25 Type BGO807 BGO807CE BGO827 Type BGY885A BGY887 BGD812 Type CGD942C CGD944C

Frequency 870 MHz 870 MHz Frequency 870 MHz

Product highlight: BGO807CE
BGO807CE is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807CE enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807CE is the perfect fit.

` ` ` ` ` ` `

Features

Excellent linearity Low noise Excellent flatness Standard CATV outline Rugged construction Gold metallization ensures excellent reliability High optical input power range

18

NXP Semiconductors RF Manual 14th edition

1.3.2 CATV electrical (line extenders)
Application diagram

duplex filter coax in

RF preamplifier

RF power amplifier

duplex filter coax out

RF reverse amplifier

bra505

Recommended products
Function Product Frequency 550 MHz 600 MHz 750 MHz RF pre-amplifier Gain (dB) 33.5 - 35.5 33.5 - 35.5 26.2 - 27.8 21 - 22 33.5 - 35.2 33.5 - 34.5 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 22 24 28 29 32 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGE788 BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041* CGY1043* CGY1047 CGY1049* CGY1032* Function Product Frequency 550 MHz 750 MHz Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 - 19 18.2 - 18.8 19.7 - 20.3 20.5 - 22.5 23 - 25 21 23 23 25 25 26 Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD942C CGD944C CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi*

Push-Pulls 870 MHz

RF power amplifier

Power doublers

870 MHz

1000 MHz

1000 MHz

Function RF reverse amplifier

Product Reverse hybrids

Frequency 5-75 MHz 5-120 MHz 5-200 MHz

Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5

Type BGY68 BGY66B BGY67A

All available in SOT115 package. * = check status at 3.1 new products, as this type has not been released yet for mass production.

Product highlight: CGD1046Hi
CGD1046Hi* with a very high-output power level is primarily designed for use in fiber deep-optical-node applications (N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended temperature range, high power overstress capabilities in case of surges and high ESD levels resulting in a low cost of ownership. It’s designed for durability and offering superior ruggedness.

` ` ` ` ` ` ` ` ` ` ` `

Features

High-output power High power gain for power doublers Extremely low noise Dark Green products GaAs HFET dies for high-end applications Rugged construction Superior levels of ESD protection Integrated ringwave protection Design optimized for digital channel loading Temperature compensated gain response Optimized heat management Excellent temperature resistance

NXP Semiconductors RF Manual 14th edition

19

1.3.3 Broadcast / ISM (industrial, scientific & medical)
Application diagram

typ. 0.5 kW DVB-T Driver stages

TV exciter DVB-T

harmonic filter

typ. 5 kW DVB-T output power power monitor

8 × final

amplifiers

Recommended products
Function driver driver driver final final final final final final final final Type BLF871(S) BLF881(S) BLF571 BLF573(S) BLF574 BLF578 BLF645 BLF878 BLF888 BLF888A(S) BLF177 BLF278 frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1400 0 - 1400 470 - 860 470 - 860 470 - 860 470 - 860 470 - 860 470 - 860 28 - 108 108 - 225 PL(AV) W 100 24 140 33 20 300 500 1200 1000 100 100 75 300 250 110 250 115 150 250 - 300 nD % 47 33 49 34 70 70 70 71 75 45 56 32 46 46 31 46 32 >35 50 - 80 Gp dB 21 22 21 21 27.5 27.2 26.5 24 26 18 18 21 21 19 19 19 19 20 14 - 20 Mode of operation 2-TONE DVB-T 2-TONE DVB-T CW CW CW PULSED RF CW 2-TONE CW DVB-T DVB-T 2-TONE DVB-T 2-TONE   DVB-T CW class AB CW class AB

Product highlight:
NXP’s 50 V high voltage LDMOS process enables highest power and unequalled ruggedness. BLF888A: delivers the highest power level for digital broadcasting available to date. 

` ` ` ` `

Features

Best broadband efficiency Highest power devices Unrivalled ruggedness Low-thermal resistance design for very reliable operation Very consistent device performance

20

NXP Semiconductors RF Manual 14th edition

1.4 TV, NIM (STB) and Satellite
Note: looking for TV on Mobile? See chapter 1.5.1 Handset.

1.4.1 Network interface module (NIM) for TV reception
Application diagram

RF input

surge

VGA

CONVENTIONAL TUNER OR SILICON TUNER

RF SW WB LNA

RF output

brb403

Make a high performance active splitter in a NIM tuner with BGU703x. Nowadays more flexibility in design and more complicated signal handling is required for a TV tuner. A front-end of a TV signal receiver is no longer just a tuned receiver, but has evolved into a RF Network Interface Module (NIM) with tuned demodulators, active splitters and re-modulators. The active splitter requires an LNA with excellent linearity. We have developed a new series of LNA/ VGA MMICs (BGU703x) designed specifically for high linearity (IP3O of 29 dBm) in low noise applications like an active splitter in a NIM tuner.

Save energy with BF11x8 The BF11x8 series are small signal RF switching MOSFETs which can be used for switching RF signals up to 1 GHz. With the use of the BF11x8 series as a RF switch you can save a considerable amount of energy. When a recording device (DVD-R, HDD-R, VCR, DVR) is powered off people can remain watching TV, although the antenna is looped via the recording device. Without using BF11x8 the antenna signal is lost. At the moment the power of the recording device is on, the BF11x8 is open, so the RF signal travels via the recording device to the TV tuner. At the moment the power of the recording device is completely off, the BF11x8 closes. This ensures that the RF signal is looped through directly to the TV tuner and that TV reception is guaranteed. Energy is saved because the recording device can be powered off.

NXP Semiconductors RF Manual 14th edition

21

Recommended products
Function Product 5V Silicon RF switch RF Switch / PLT switch MOSFET 3.3V Silicon RF Switch Package SOT23 SOT143B SOT143R SOT343 SOT343R SOT143B SOT143R SOT343 SOT343R Type BF1107 BF1108 BF1108R BF1108W BF1108WR BF1118 BF1118R BF1118W BF1118WR Function Product 2 – in – 1 with band switch @ 5V 2 – in – 1 @ 5V 5V Package SOT363 SOT363 SOT343 Type BF1215 BF1216 BF1217

AGC control amplifier

MOSFET

Note: Using the BF1108 as passive loop through switch between the RF input and output of a NIM tuner can save considerable energy. For example, when the HDR is not in used, the TV signal can still be distributed to the TV without having to power up the active splitter circuit in the HDR. That is because the BF1108 RF switch is closed when no power is supplied to it, and is open when it is powered on. For 3.3 V applications, the BF1118 can be used instead. Function Product Wideband transistor with gain levels of 5 dB and 10 dB, plus a bypass mode. Wideband transistor with gain level of 10dB and a bypass mode. Wideband transistor with gain level of 10dB RF bipolar transistor Wideband transistor Package Type

Note: given that there is now an LNA before the MOSFET, the gain of these MOSFETs is made slightly lower and the cross-modulation higher. That way, the MOSFET would not be constantly under AGC even under nominal RF input level.

SOT363

BGU7033*^

VGA RF BiMOS MMIC

SOT363

BGU7032*^

SOT363

BGU7031*^

LNA

SOT143 SOT89

BFG520 BFG540 BFQ540

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = this new series of LNA MMICs is designed specifically for high linearity (IP3O of 29 dBm), low noise application like those in an active splitter or NIM tuner. Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped with internal bias and matched to 75 ohms internally. For the VGAs, current consumption is < 5mA during the bypass mode. Only 2 external components are needed, thus saving precious circuit board space!

Product highlight: BF11x8 silicon RF switch, MOSFET
This switch is a combination of a depletion type field-effect transistor and a band switching diode in an SOT143 or SOT343 package. The low insertion loss and high isolation capabilities of this device provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.
22 NXP Semiconductors RF Manual 14th edition

` ` ` ` `

Features

Specially designed for low loss RF switching up to 1 GHz Easy to design-in Power ON: low losses Power OFF: high isolation ON or OFF, ZERO power consumption

1.4.2 Basic TV tuner
Application diagram

RF input From antenna, cable, active splitter, etc.

MOSFET

MOPLL IC IF

VAGC

bra500

Recommended products
Function Product VHF low Package SOD323 SOD523 SOD882T SOD323 SOD523 SOD523 SOD882T SOD882T SOD323 SOD882T SOD523 SOD523 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT363 SOT666 Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189 Type BF1201 BF1202 BF1105 BF1211 BF1212 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1218 BF1206F Function Product VHF low Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package 2-in-1 with band switch @ 5V MOSFET 2-in-1 @ 5V 5V SOT363 SOT363 SOT343 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BF1215 BF1216 BF1217

Input filter

Varicap diode

VHF high

Bandpass filter

Varicap diode

VHF high

UHF

UHF

Function

Product

Function

Product VHF low

5V

Oscillator

Varicap diode

VHF high

RF pre-amplifier

MOSFET 2-in-1 @ 5 V

UHF

Function

Product

V

2-in-1 @ 3 V

RF pre-amplifier

Product highlight: BF1206F dual gate mosfet double amplifier specified for low power applications
The device consists of two dual gate mosfet amplifiers in a small SOT666 flatlead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3 Volts and draincurrents of 4 mA.

` ` ` ` `

Features

Low power specified Two amplifiers in one small SOT666 package Shared gate 2 and Source leads Each amplifier is biased by an external bias resistor Excellent noise and crossmodulation performance

NXP Semiconductors RF Manual 14th edition

23

1.4.3 MoCA (Multimedia over Coax Alliance)
Application diagram

PA Diplexer/ BPF T/R

LPF BALUN Tx

Cable Connection

ON/OFF Switched 1 Bit Attenuator 15 dB ON/OFF
brb401

MoCA Chip BALUN Rx

Recommended products
Function Product Package SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOD822T Package SOT908 SOT89 SOT908 SOT89 Type BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX Type BGA7124 BGA7024 BGA7127 BGA7027

SPDT switch

RF diode

PIN diode

Function PA (power amplifier)

Product MMIC SiGe:C MMIC

Product highlight: medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a lowcost ultra small SOT908 leadless package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.
24 NXP Semiconductors RF Manual 14th edition

` ` ` ` ` ` `

Features

400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 V / 5 V single supply operation Simple quiescent current adjustment 1 μA shutdown mode

1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram

horizontal 1st antenna stage LNA

2nd stage LNA

3rd stage LNA

mixer

H low IF amplifier

low mixer BIAS IC

oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH

IF amplifier

IF out 1

vertical antenna

high

oscillator V high

IF amplifier

IF out 2

1st stage LNA

2nd stage LNA

3rd stage LNA

mixer

IF amplifier

brb022

Recommended products
Function Oscillator Product RF bipolar transistor RF transistor Function Product General purpose amplifier 1st stage IF amplifier MMIC IF gain block Wideband transistor SiGe:C transistor Package SOT343 SOT343F SOT343F Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Package various various various various various Type BFG424W BFG424F BFU725F/N1 Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG424W BFG424F Type BAP64^ BAP51^ BAP1321^ BAP50^ BAP63^ Function Product General purpose amplifier Output stage IF amplifier MMIC IF gain block# Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG325

RF bipolar transistor

Wideband transistor

# = When using one of our IF gain blocks (BGA28xx) as output stage IF amplifier, you do not need an output inductor anymore. Function 3 stage LNA
rd

RF bipolar transistor Function Product

Wideband transistor

Product RF transistor Product RF transistor SiGe:C transistor SiGe:C transistor

Package SOT343F Package SOT343F

Type BFU725F/N1 Type BFU725F/N1

Function Mixer

IF switch

RF diode

PIN diode

^ = also available in ultra small leadless package SOD882T.

Product highlight: BGA28xx-family, IF gain blocks
The BGA28xx IF gain blocks are Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuit in a 6-pin SOT363 plastic SMD package.

` ` ` `

Features

Internally matched to 50 Ω Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Unconditionally stable (K > 1)

NXP Semiconductors RF Manual 14th edition

25

1.4.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram

input terrestrial amplifier input terrestrial input amplifiers LNB satellite dishe(s)

output amplifiers coax out to STB SWITCH MATRIX FOR 4 × 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB
brb023

Recommended products
Function Input amplifier terrestrial Product General purpose medium power amplifier Package SOT89 SOT908 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 SOT343F Package Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 BFU725F/N1 Type BAP50^ BAP51^ BAP63^ BAP64^ BAP70^ BAP1321^ BFU725F/N1 Function Product General purpose medium power amplifier General purpose amplifier Wideband transistor SiGe:C transistor Package SOT89 SOT908 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 SOT343F Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 BGM1011 BGM1013 BGM1014 BFG135 BFG 591 BFG198 BFG540 BFU725F/N1

MMIC

MMIC Output amplifier

Function

Product MMIC General purpose amplifier Wideband transistor SiGe:C transistor

Input amplifier LNB

RF bipolar transistor

RF bipolar transistor

Function

Product

Switch matrix

RF diode

PIN diode

Various

RF transistor

SiGe:C transistor

SOT343F

^ = also available in ultra small leadless package SOD882T.

Product highlight: PIN diodes for switching matrix
Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options – including SOD523, SOD323 and leadless SOD882T.
26 NXP Semiconductors RF Manual 14th edition

` High isolation, low distortion, low insertion loss ` Low forward resistance (Rd) and diode capacitance (Cd) ` Ultra-small package options

Features

1.4.6 Digital Satellite Set Top Box (high definition)
Application diagram

Coax-in

Balun

(HD) Satellite System on Chip (SoC)
brb435

Recommended products
Function  LNA Product MMIC Medium Power Amplifier Package SOT89 Type BGA6289 BGA6489 BGA6589

Product highlight: BGA6489 MMIC medium power amplifier
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6489 provides high-quality performance in satellite applications from 250 MHz - 2.15 GHz.

` 20 dBm output power ` Single supply voltage needed

Features

NXP Semiconductors RF Manual 14th edition

27

1.5 Consumer Mobile
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.

1.5.1 Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB^ / LTE)
^ = Chinese Multimedia Mobile Broadcasting (CMMB) Application diagram

LNA

MULTI-BAND TRANSCEIVER FM RADIO TRANSCEIVER GPS RECEIVER GPS RF GPS BB Vref CMMB DECODER Vref VCTCXO CLK BUFFER BB PROCESSING

LNA

LNA

LNA

LNA TUNER

ANALOG TV RECEIVER DECODER VIDEO PROCESSOR APPLICATION

brb402

Recommended products
Function LTE LNA Function FM radio LNA Product MMIC Product Transistor Wideband transistor SiGe:C MMIC J-FET Frequency SiGe:C MMIC SiGe:C MMIC Package SOT891 Package SOT323 SOT891 SOT23 Package SOT891 SOT886 SOT886 Package Wideband transistor SiGe:C transistor SiGe:C MMIC SOT343 SOT343F SOT891 Type BGU7003 Type BFR93AW BFS505 BGU7003 BF510 Type BGU7003 BGU7005 BGU7007* Type BFG425W BFU725F/N1 BGU7003 Function Reference clock Product CLK buffer VCTCXO Frequency Wideband transistor Wideband transistor Package SOT323 SOT363A Type BFR93AW BFM520 TV on Mobile LNA Transistor MMIC Function Product Function Product Wideband transistor SiGe:C transistor SiGe:C MMIC Frequency Package SOT343 SOT343F SOT891 Package Type BFG425W BFU725F/N1 BGU7003 Type BB202LX BB178LX BB179LX BB181LX BB182LX BB184LX BB187LX

Function GPS LNA

Product MMIC

TV on Mobile tuning diode

RF diode

Varicap diode^

SOT882T

Function

Product Transistor MMIC

CMMB LNA

* = check status at 3.1 new products, as this type has not been released yet for mass production. ^ = also in SOD523

Product highlight: BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.
28 NXP Semiconductors RF Manual 14th edition

` ` ` ` ` `

Features

Low-noise, high-gain microwave MMIC Maximum stable gain = 19 dB at 1.575 GHz 110-GHz fT-Silicon Germanium technology Optimized performance at low (5-mA) supply current Extemely thin, leadless 6-pin SOT891 package Integrated biasing and shutdown for easy integration

1.5.2 A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent)
Application diagram

low pass lter antenna SPDT switch Tx medium power ampli er

PActrl

APPLICATION CHIP SET

Rx bandpass lter LNA SPDT
bra502

Recommended products
Function Medium power amplifier Product MMIC Medium power amplifier Package SOT89 SOT908 Type BGA7024 BGA7027 BGA7124 BGA7127 Type BFU725F/N1 BGU7003

Function LNA

Product RF Transistor MMIC SiGe:C transistor SiGe:C MMIC

Package SOT343F SOT891

Product highlight: medium power amplifier BGA7127 MMIC
The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 28 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.

` ` ` ` ` ` `

Features

400 MHz to 2700 MHz frequency operating range 13 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing 3.3 V / 5 V single supply operation Simple quiescent current adjustment 1 μA shutdown mode

NXP Semiconductors RF Manual 14th edition

29

1.5.3 2-way radio / family radio system
Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch VCO LOW FREQUENCY CHIP SET

filter

PA

driver

VCO

bra850

Recommended products
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product RF bipolar transistor Wideband transistor Package SOD523 SOD323 various various Package SOT23 SOT323 SOT323 Type BA277 BA591 BAP51^ BAP1321^ Type PBR951 PRF957 PRF947 BFU725F/N1 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Power amplifier Product Gen. purpose wideband ampl. Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 Type BB198 BB156

LNA

MMIC Function Product RF bipolar transistor MMIC

SiGe:C SOT343F transistor SOT343R Low noise wideband ampl. SOT343R Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363

MMIC

SOT89

Driver

Function VCO

^ = also available in ultra small leadless package SOD882T

Product Varicap diodes

VCO varicap diodes

Package SOD523 SOD323

Product highlight: PRF957 silicon NPN UHF wideband transistor
Silicon NPN UHF wideband transistor in a surface mount 3-pin SOT323 package is primarily intended for wideband applications in the RF front end. The transistor is widely built as LNA, power amplifier, driver and buffer in the UHF band application.

` Small 3-pin plastic surface mounted package ` Low noise (1.3 dB at 1 GHz) and high power gain (15 dB at 1 GHz) ` Gold metallization ensures excellent reliability

Features

30

NXP Semiconductors RF Manual 14th edition

1.5.4 DECT front-end
Application diagram

DECT in-house base station
Application diagram

antenna

LNA

antenna

LNA

filter

mixer

filter

buffer SPDT switch VCO

switch

CHIPSET

CHIPSET

filter

PA

filter

PA

driver

VCO

bra911

bra910

Recommended products
Function Product Package various various various various various various Type BAP51^ BAP55^ BAP142^ BAP63^ BAP64^ BAP1321^

Recommended products
Function Product Package various various various various various various Package SOT343 SOT343 SOT343 SOT343F SOT363 Type BAP51^ BAP55^ BAP142^ BAP63^ BAP64^ BAP1321^ Type BFG410W BFG425W BFG480W BFU725F/N1# BGA2022

RF Switch

RF diode

PIN Diode

RF Switch

RF diode

PIN Diode

^ = also available in ultra small leadless package SOD882T.

Function

Product RF bipolar transistor MMIC Wideband transistor SiGe:C transistor Linear mixer

Mixer

# = also for 5.8 GHz

Product highlight: BAP64xx PIN diode for RF switch
Operating up to 3 GHz with high-voltage handling capabilities, NXP’s PIN diodes are ideal for a wide range of wireless communication application. Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options – including SOD523, SOD323 and leadless SOD882T.

` ` ` `

Features

Operate up to 3 GHz High isolation, low distortion, low insertion loss Low forward resistance (Rd) and diode capacitance (Cd) Ultra-small package options

NXP Semiconductors RF Manual 14th edition

31

1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.

1.6.1 Active antenna
Application diagram

antenna 1st stage LNA 2nd stage LNA 3rd stage LNA

CHIPSET
brb215

Recommended products
Function 1st stage LNA Function 2nd stage LNA Product MMIC Low noise wideband amplifier Package SOT343R SOT343R Package SOT363 SOT363 SOT363 SOT363 Package SOT343F SOT891 Type BGA2001 BGA2003 Type BGM1013 BGM1011 BGA2715 BGA2748 Type BFU725F/N1 BGU7003

Product MMIC General purpose wideband amplifier

Function 3 rd stage LNA

Product RF transistor MMIC

SiGe:C transistor SiGe:C MMIC

Product highlight: BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.

` ` ` ` ` `

Features

Low-noise, high-gain microwave MMIC Maximum stable gain = 19 dB at 1.575 GHz 110-GHz fT-Silicon Germanium technology Optimized performance at low (5-mA) supply current Extemely thin, leadless 6-pin SOT891 package Integrated biasing and shutdown for easy integration

32

NXP Semiconductors RF Manual 14th edition

1.6.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram

antenna receiver filter LNA filter mixer LOW FREQUENCY CHIP SET buffer VCO antenna transmitter filter PA driver VCO LOW FREQUENCY CHIP SET
bra851

Recommended products
Function Product RF bipolar transistor LNA MMIC Wideband transistor Package SOT23 SOT323 SOT323 Type PBR951 PRF957 PRF947 BGA2001 BGA2002^ BGA2003 BGU7003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package SOT323 SOT23 SOT363 SOT363 SOT363 SOT908 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 BGA7124

Low noise SOT343R wideband ampl. SiGe:C MMIC SOT891

Function

Product RF bipolar transistor MMIC

Driver

Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOD323 SOD323 SOD523 SOD323

Function

Product RF bipolar transistor MMIC

Function VCO

Product Varicap diodes VCO varicap diodes

Power amplifier

Wideband transistor Amplifier Gen. purpose wideband ampl.

^ = automotive qualified

Product highlight: NXP varicap diodes for VCO
Varicap diodes are principally used as voltage varicap capacitors with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCO) in ISM band applications.

` ` ` `

Features

Excellent linearity Excellent matching Very low series resistance High capacitance ratio

NXP Semiconductors RF Manual 14th edition

33

1.6.3 Tire pressure monitoring system
Application diagram

antenna filter PA driver VCO

SENSOR
brb216

Recommended products
Function Product RF bipolar transistor Wideband transistor Package SOT23 SOT323 SOT23 SOT323 SOT323 Package SOT323 SOT23 SOT363 SOT363 SOT363 Package SOD523 SOD323 Type BFR92A BFR92AW BFR94A^ BFR93AW BFR94AW^ Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB198 BB156

PA

Function

Product RF bipolar transistor MMIC

Driver

Wideband transistor Amplifier Gen. pupose wideband ampl.

Function VCO

Product Varicap diodes VCO varicap diodes

^ = automotive qualified

Product highlight: BFR94AW silicon NPN transistor
It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. This silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

` ` ` `

Features

High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package AUTOMOTIVE QUALIFIED

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NXP Semiconductors RF Manual 14th edition

1.6.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram

FM input filter & AGC

1st mixer

IF bandpass filter

2nd mixer

variable BW filter

IF limiter FM deamplifier modulator f V FM MPX

AGC & hum filter AM LNA

oscillator

oscillator

DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator

AM audio

bra501

Recommended products
Function AM LNA Function FM input filter & AGC ^ = OIRT Product RF transistor Product RF diode Varicap diode PIN diode JFET Package SOT23 Package SOT23 SOT23 SOD523 SOD323 Type BF862 Type BB201^ BB207 BAP70-02 BAP70-03 Function AGC & hum filter Function Oscillator Product RF diode Product RF diode Varicap diode PIN diode Package SOT363 Package SOD323 SOD523 Type BAP70AM Type BB156 BB208-02

Note 1: All these recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All these recommended discrete products are applicable excluding AM LNA in: DICE2:TEF6730HWCE.

Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator.

Product highlight: BF862 Junction Field Effect Transistor
Our Tuning component portfolio contains excellent products for car radio reception applications, playing a vital role for in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design in. Performance is demonstrated in reference designs. High performance Junction Fet BF862, specially designed for car radio AM amplifiers.

` High transition frequency and optimized input capacitance for excellent sensitivity ` High transfer admittance resulting in high gain ` Encapsulated in the versatile and easy to use SOT23 package

Features

NXP Semiconductors RF Manual 14th edition

35

1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch VCO E-METERING CHIP SET

filter

MPA

driver

VCO

bra850

Recommended products
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function LNA Product RF transistor SiGe:C transistor Low noise wideband ampl. MMIC SiGe:C MMIC Product RF bipolar transistor MMIC Package SOD523 SOD323 various various Package SOT343F SOT343R SOT343R SOT891 Package Wideband transistor Amplifier Gen. purpose wideband ampl. SOT343 SOT363 SOT363 SOT363 Type BA277 BA591 BAP51^ BAP1321^ Type BFU725F /N1 BGA2001 BGA2003 BGU7003 Type BFG425W BGA2031/1 BGA2771 BGA2776 Medium power amplifier Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Wideband transistor Gen. purpose wideband ampl. SOT343 SOT89 SOT908 SOT908 Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BFG21W BGA6289 BGA6489 BGA6589 BGA7124 BGA7127 Type BB198 BB156

Function

Function

Product RF bipolar transistor

Driver

MMIC

^ = also available in ultra small leadless package SOD882T.

Function VCO

Product Varicap diodes

VCO varicap diodes

Product highlight: BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 27 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.
36 NXP Semiconductors RF Manual 14th edition

` ` ` ` ` ` `

Features

400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 V / 5 V single supply operation Simple quiescent current adjustment 1 μA shutdown mode

1.6.6 RF Plasma Lighting
Application diagram

RF (plasma) bulb

oscillator

MPA

HPA

CONTROLLER

brb436

Recommended products
Function driver final final final final final final Function Type BLF571 BLF573S BLF574 BLF578 BLF645 BLF 278 BLF 177 Product MMIC MPA (medium power amplifier) frange (MHz) 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 0 - 1300 108 - 225 28 - 108 PL W 20 300 400 1200 1000 100 100 250 150 Gp dB 27.5 27.2 26.5 24 24 18 17 16 19 Mode of operation 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE; PULSED RF 1-TONE; CW 2-TONE CW class AB class B Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133*

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908

MMIC SiGe:C MMIC

* = check status at 3.1 new products, as this type has not been released yet for mass production.

Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power at unprecedented ruggedness levels necessary for this kind of application. BLF578: 1000 W CW operation - highest power LDMOS

` ` ` ` `

Features

Highest power device Unprecedented ruggedness Low-thermal resistance design for very reliable operation Very consistent device performance Broadband device for flexible use

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37

1.6.7 Medical Imaging
Application diagram

Magnet
X GRADIENT AMPLIFIER

Gradient coils RF coils

Y GRADIENT AMPLIFIER

WAVEFORM GENERATOR

Z GRADIENT AMPLIFIER

RF amplifier

RF ELECTRONICS

ADC

COMPUTER IMAGE DISPLAY
brb434

Recommended products
Function driver driver driver final final final final Type BLF871(S) BLF881 BLF571 BLF573S BLF574 BLF578 BLF645 frange (MHz) 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 PL W 100 120 20 300 400 1200 100 Gp dB 21 21 27.5 27.2 26.5 24 18

Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest power output and feature unequalled ruggedness for pulsed operation in MRI and NMR applications. The high power densities enable very compact amplifier design.

` ` ` `

Features

Best broadband efficiency Highest power (density) devices Unrivalled ruggedness Very consistent device performance

38

NXP Semiconductors RF Manual 14th edition

1.6.8 RF Microwave furnace application
Application diagram

antenna

oscillator

MPA

HPA

CONTROLLER

isolator

brb418

Recommended products
Function Driver Final Final Function Type BLF6G24-12 BLF6G24-180PN BLF7G24L (S)-250P Product MMIC MPA (medium power amplifier) frange MHz 2000 - 2200 2000 - 2200 2500 - 2700 Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 PL(AV) W 40 50 20 nD % 27.5 27.5 25 Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* GP dB 17 17.5 16.5 Availability Q3 2010 Q3 2010 Q3 2010

MMIC SiGe:C MMIC

* = check status at 3.1 new products, as this type has not been released yet for mass production.

Product highlight:
NXP’s 6th and 7th generation LDMOS technology together with advanced package concepts enable best in class performing power amplifiers. The unsurpassed ruggedness and low thermal resistance in connection with the high intrinsic efficiency make these transistors ideally suited for the furnace application.

` ` ` `

Features

Excellent ruggedness Very consistent device performance Low thermal resistance design for unrivalled reliability Very easy to design with

NXP Semiconductors RF Manual 14th edition

39

2. Technologies & focus products

2.1

Get the fastest TTFF^ with GPS LNAs that use proven QUBiC4X SiGe:C
^ TTFF = Time-To-First-Fix

NXP GPS LNAs BGU7003, BGU7005, BGU7006 and BGU7007
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in the industry’s smallest package, this highly integrated GPS LNAs reduce cost while delivering better sensitivity, greater immunity against jamming signals, and higher linearity.
These LNAs designed for GPS receiver applications, are produced in NXP’s industry-leading QUBiC4X process, a 0.25-µm SiGe:C technology. They have very low noise figures and superior linearity performance, so they help to improve overall sensitivity, which in turn leads to faster Time-To-First-Fix (TTFF) and better tracking. The proven QUBiC4X process improves overall RF performance and means the LNAs are less expensive and offer higher, more flexible performance than their GaAs counterparts. They restore sensitivity, provide greater immunity against out-of-band cellular signals, reduce filtering requirements, and lower overall cost. They can be placed close to the GPS antenna, minimizing the noise figure. Additional gain amplifies the GPS signal and raises the on-board signal-to-jammer ratio. The GPS receiver can be put close to the primary phone antenna, for the best GSM/UMTS performance, while the GPS antenna can be placed far away. This improves antenna-toantenna isolation and results in higher performance.

Features ` Requires only 4 external components (including decoupling) to build complete GPS front-end. ` Requires only one external matching component ` Low current consumption (5 mA) ` Low noise figure (NF): 0.8 - 0.9 dB at 1.575 GHz ` Low current consumption in power-down mode (<1 μA) ` ESD protection on all pins ` Supply voltage: max 2.85 V, optimized for 1.8 V ` Proven, robust QUBiC4X SiGe:C process technology (fT = 110 GHz)

supply voltage Type Package Vcc V Min BGU7003 BGU7005 BGU7006* BGU7007* SOT891 SOT886 WLCSP*** SOT886 2.2 1.5 1.5 1.5 Max 2.85 2.85 2.85 2.85

supply current Icc mA Min 3 Typ 4.5 3.8 4.8

@ 1.575 GHz insertion power noise input power at 1 dB gain compression gain figure |s21|
2

input third-order intercept point IP3i dBm

NF dB Max Typ 20 0.8 0.9 0.9 0.9

PI(1dB) dBm

dB Max Min 15 16 Typ 18.3 16.5** 16.5** 18****

Vcc = Vcc = Vcc = Vcc = Vcc = Vcc = Vcc = Vcc = V = 2.5 V, V = 2.5 V, 1.8 V, 1.8 V, cc 2.85 V, 2.85 V, 1.8 V, 1.8 V, cc 2.85 V, 2.85 V, Icc = 5 mA Icc = 5 mA Min Typ Min Typ Min Typ Min Typ -20 0 -14 -11 -11 -8 5 9 5 12 -14 -11 -12 -9 1 4 5 9 -14 -11 -11 -8 5 9 5 12

* = check status at 3.1 new products, as this type has not been released yet for mass production. ** = 16.5 dB without jammer / 17.5 dB with jammer *** = 5 solder bumps, pitch 220 µm **** = 18 dB without jammer / 19 dB with jammer 40 NXP Semiconductors RF Manual 14th edition

2.2

Always the right match with our latest 6th and 7th generation SiGe:C wideband transistors

Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGe:C microwave NPN transistors, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 30 GHz.
Benefits ` Plastic surface-mount SOT343F package ` SiGe:C process delivers high switching frequency from a silicon-based device ` Cost-effective alternative to GaAs devices ` RoHS compliant Applications ` Low noise amplifier (LNA) for microwave communications systems ` 2 stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs) ` GPS systems ` Satellite radio ` WLAN/WiMAX and CDMA applications, LTE ` DVB, CMMB
nd

The NPN microwave transistors deliver an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to the ultra-low noise figures, they are perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with the high cut-off frequencies, they are your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. These new 6th and 7th generation SiGe:C wideband transistors get their outstanding performance from our innovative silicongermanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, highfrequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. In addition, with these transistors, you don’t need a biasing IC or negative biasing voltage. So it’s a much more cost-effective solution than GaAs pHEMT devices.

Full portfolio overview of 6th and 7th generation RF wideband transistors at chapter 3.3.1

NXP Semiconductors RF Manual 14th edition

41

2.3

NXP Medium-Power MMICs BGA7xxx for broadband applications

Broadband QUBiC4 MMICs for all 400-2700 MHz applications
Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance and added-value features to all 400-2700 MHz applications − at a lower cost than GaAs versions.

Features ` ESD protection at all pins ` Single-supply operation (3.3 or 5 V) ` Integrated active biasing ` Fast shutdown ` Quiescent current adjustment ` Two package options, smallest leadless package (3 x 3 mm) and leaded SOT-89 Applications ` Wireless infrastructure (base station, repeater) ` eMetering ` Broadband CPE (MoCA) ` Satellite Master Antenna TV (SMATV) ` Industrial applications ` W-LAN / ISM / RFID Manufactured in NXP’s breakthough QUBiC4 process, these MMICs deliver a comparable level of RF performance as their GaAs equivalents, but at a lower cost and with additional features, like thermal performance and ESD robustness. The QUBiC4 process makes it possible to support even more features, including active biasing, quiescent adjustment, VGA interfaces, and a power-saving shutdown mode. To increase design flexibility, all the MMICs support single-supply (3.3/5 V) operation. And, to save space, they are available in the smallest package size (3 x 3 mm) and with leadless options. MoCA These MMICs are exceptionally well-suited for use a MoCA (Multimedia over Cable Alliance) PA in both the STB and in PC dongles. The MMICs offer the system designer the ability to
Supply f Vcc Typ Typ Icc Max

tailor gain or P1dB for specific platform requirements. Between 475-625 MHz and 1.15-1.5 GHz gain flatness is unrivalled. NXP Medium Power MMICs operate at low current consumption and offer a fast shut-down function to save as much power as possible. With ESD protection, active biasing and SOT89 package availability, design-in is simplified and requires a minimum of external components. Base station The high power level of these MMICs makes them an excellent choice for mobile-infrastructure applications. They offer the highest gain overall all base stations frequencies. The quiescentcurrent feature allows for high efficiency and linearity in Class-AB operation. The bias circuitry delivers a stable performance over temperature and supply variations. The integrated shutdown function is a power-saving feature and can be used for fast shutdown. The MMICs can be tuned for any band between VHF and 2.7 GHz.Unbeatable thermal performance (30 °C/W) improves overall quality and reliability. eMetering These MMICs are also very well suited to eMetering applications in the 900-2400 MHz ISM band. High integration and singlesupply operation mean that the MMICs can be combined with just a few other components to create a full-featured solution. The MMICs can be operated on battery power (with an energysaving shutdown mode) and are tunable between Class A and AB. They can also work on a power-line network, so they support gas metering with or without a power connection. The builtin reliability and quality of a silicon-based process provides longevity, as does the improved ESD performance.
Shutdown control RF performance II(D)L(SHDN) Typ dB 22 22 20 19 18 18 Typ @ f = 940 MHz Gp PL(1dB) dBm 25 24 28 28 30 33 OIP3 dBm 38 38 44 41 45 46 NF dB 5 3 3 3 4 4 RF performance Typ @ f = 1960 MHz Gp dB 16 16 13 12 12 12 PL(1dB) dBm 24 25 28 28 30 33 OIP3 dBm 38 38 43 43 45 47 NF dB 5 4 5 4 4 4

VI(D)L(SHDN) Min Max

VI(D)H(SHDN) Min Max

Type

Package

(MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 BGA7024 SOT89 leaded 400 - 2700 5 110 BGA7127* SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 BGA7027* SOT89 leaded 400 - 2700 5 170 BGA7130* SOT908 leadless 400 - 2700 5 0 0.7 2.5 Vbias 4 BGA7133* SOT908 leadless 400 - 2700 5 0 0.7 2.5 Vbias 4 The specifications of the BGA7130 and BGA7133 are target specifications until development is completed. * = check status at 3.1 new products, as this type has not been released yet for mass production. 42 NXP Semiconductors RF Manual 14th edition

2.4

Low-noise LO generators for microwave & mmWave radios

NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low power consumption and low-spurious solutions that simplify design-in and lower the total cost of ownership.
These low-noise local-oscillator (LO) generators, optimized for use in many different microwave applications between 7 and 15 GHz, deliver highly accurate performance in a small footprint. They require no alignment or frequency modification on the production line, so they simplify manufacturing. High integration saves board space and makes design-in easier, for lower overall cost and faster development, enabling quick time-to-market. Since these ICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C process, they offer better overall RF performance, are more robust than their GaAs equivalents, and consume much less power. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. The TFF1003HN is the basis for the entire family of LO generators. It has VCO coverage of 12.8 to 13.05 GHz and accepts input signals from 50 to 816 MHz. The divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a stability of ±2 dB. The family of LO generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 GHz. The RF performance of all these devices is consistent with the TFF1003HN. All the LO generators have very low power dissipation typical 330 mW, and all are available in a space-saving 24-pin HVQFN package.

Features ` TFF11xxxHN family: Lowest noise LO generators for a full family in range 7 to 15 GHz ` Maximum power consumption for all types, typical 330 mW ` ` ` ` ` ` ` Phase-noise compliant with IESS-308 (Intelsat) Proven QUBiC4X SiGe:C technology (120-GHz fT process) External loop filter Differential input and output Lock-detect output Internally stabilized voltage reference for loop filter 24-pin HVQFN (SOT616-1) package

Applications : TFF11xxxHN family ` Industrial/Medical Test and Measurement Equipment ` Electronic Warfare (EW) ` Electronic Countermeasures (ECM) ` Point to Point ` Point to Multi-Point ` Satellite Communication

Full portfolio overview of low noise LO generators for general microwave applications at chapter 3.4.2

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43

2.5

Complete satellite portfolio for all LNB architectures

NXP satellite LNB devices BFU725F/N1 and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are the latest additions to NXP’s leading portfolio for satellite LNB.

BFU725F/N1 RF transistor The BFU725F/N1 is a RF transistor that can be used in the LNA part and as a mixer for a DBS LNB. In either application, it delivers low power consumption, good noise and linearity, and the lowest cost compared to GaAs pHEMT solution. BFU725F/N1 as mixer in Ku-band LNB ` Power consumption: 2 mA at 5 V ` Single supply: 3, 5, or 6 V ` Noise, Single Side Band: 7 dB (including BPF) ` Linearity: better than 0 dBm OIP3 ` Gain, SSB: 2 dB (including BPF) ` RF/LO/IF Match: better than 12/15/18 dB ` Broadband unconditionally stable ` LO-RF isolation better than 18 dB

BFU725F/N1 as LNA for C-band LNB ` Power consumption: 7 mA at 5 V ` Single supply: 5 or 6 V ` Noise: 0.65 dB ` Linearity: better than 10 dBm OIP3 ` Gain: 15 dB ` In/Out Match: better than 10 dB ` Broadband unconditionally stable BGA28xx MMICs as IF amplifiers (1st stage & output stage) For compatibility with existing designs, the series uses a market standard package, the SOT363 and the pin-compliant SOT363F package. The pinning is identical to NXP’s current gain block family, and the blocks deliver similar noise figures. New features include flatter gain, a gain slope of 0.5 dB, improved P1dB vs. Icc, and no necessity of an output inductor (also not at high P1dB models). ` Internally matched at 50 Ω ` Gain slope 0.5 dB ` Single supply current - At 3.3 V or 5 V ` Reverse isolation: >30 dB up to 2 GHz ` Best-in-class linearity vs current consumption ` Noise figure: 4 to 6 dB at 1 GHz ` Unconditionally stable (K > 1) ` High compression point models work without output inductor ` 6-pin SOT363 plastic SMD package These products – the BFU725F/N1 transistor for LNA and mixer applications, and the BGA28xx series of MMICs for IF amplifiers – are the most recent additions to NXP’s

BFU725F/N1 as 2nd or 3rd stage LNA in Ku-band LNB ` Power consumption: 11 mA at 5 V ` Single supply: 3, 5, or 6 V ` Noise, SSB: typically 1.3 dB ` Linearity: better than 10 dBm OIP3 ` Gain, SSB: typically 10.5 dB ` In/Out match: better than 7/12 dB ` Broadband unconditionally stable

44

NXP Semiconductors RF Manual 14th edition

leading portfolio for satellite LNB. They join the other discrete products, including oscillators, amplifiers, switches, and biasing, to provide complete coverage for all LNB architectures. Since the transistor and the MMICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C and QuBiC4+ process,

they offer better overall RF performance and are more robust than their GaAs equivalents for the lowest cost. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured.

Satellite outdoor unit, LNB for multiple users
horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA

mixer

H low IF amplifier

low mixer BIAS IC

oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH

IF amplifier

IF out 1

vertical antenna

high

oscillator V high

IF amplifier

IF out 2

1st stage LNA

2nd stage LNA

3rd stage LNA

mixer

IF amplifier

brb022

NOTE: Also look at chapter 1.4.4 satellite outdoor unit.

Quick reference satellite IF gain MMICs
@ Type Package Vs (V)
BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 3.3 3.3 3.3 3.3 5.0 5.0 5.0

Fu Is (mA)
9.7 12.4 16.4 19.6 7.7 22.7 15.4

@ 1 GHz NF (dB)
3.4 3.6 3.4 2.8 3.9 3.7 3.6

Gain (dB) @ OIP3 (dBm)
11.5 13.6 18.2 16.1 8.7 20.9 17.7

@-3dB (GHz)
>3 3.0 >3 2.3 >3 2.6 >3

Gain (dB)
20.2 22.1 25.4 31.2 23.3 31.9 23.4

250 (MHz)
20.0 22.3 26.2 32.0 22.9 31.2 23.0

950 (MHz)
20.2 22.1 25.4 31.2 23.2 31.8 23.3

1550 (MHz)
20.6 23.0 25.5 30.6 23.9 32.6 24.0

2150 (MHz)
20.6 23.8 25.8 28.7 24.0 31.4 24.3

No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.

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45

2.6

VSAT, 2-way communication via satellite

Design a Ku-band VSAT transmitter or transceiver that meets IESS-308 NXP Ku-band RF LO Generator IC’s for VSAT
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise Local Oscillator (LO) circuits in Ku-band VSAT transmitters and transceivers. Manufactured in a highperformance SiGe:C process, it delivers extremely low phase noise and complies with the IESS-308 from Intelsat.
VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a Low Noise Block (LNB) for receiving the downlink signals, and a Block Up Converter (BUC). The VSAT IC’s can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequency locked to the reference. The TFF100xHN IC’s are housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P) and OUT-N) have been reserved to match a typical layout using a linewidth of Z = 50 Ω microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC.

Features ` Phase noise compliant with IESS-308 (Intelsat) ` Differential input and output ` Divider settings at 16, 32, 64, 128 or 256 ` Lock-detect output ` SiGe:C technology (120-GHz fT process) ` HVQFN24 (SOT616-1) package Applications ` VSAT block-up-converters ` VSAT down conversion ` Local oscillator signal generation

46

NXP Semiconductors RF Manual 14th edition

Satellite

VSATs

HUB

Typical VSAT network

synchronized QPSK data on L band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz) from indoor unit 10 MHz

mixer

band pass filter

solid state power amp

13.05 GHz settings (12.8 GHz settings) /64 (/48) 156.25 kHz (208.83 kHz) PFD

203.90625 (200) MHz LF PFD LF

12.8~13.05 on-chip VCO

amp

band pass filter /1305 (/960)

/64 TFF1003HN 203.90625 (200) MHz > 13.05 (12.8) GHz TFF1003 @ DIV = 64 PLL with on-chip VCO

clean up PLL build around VCXO narrow bandwidth

brb200

Complete LO generator for linear BUC with TFF1003HN

Type

Package

fIN(REF)

VCC Typ

ICC

PLL phase noise @ N=64 @ 100 kHz Max

PLL fo(RF) (GHz) 12.8~13.05 14.75~15

Output buffer Po Typ dBm -5 -3 RLout(RF) Max dB -10 -10

Input Si Min dBm -10 -10

MHz TFF1003HN TFF1007HN SOT616 SOT616 50~815 230.46~234.38

V 3.3 3.3

mA 100 100

dBc/Hz -92 -104

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47

2.7

NXP CATV C-family for the Chinese SARFT standard

Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of China’s ‘Connecting every village’ program and powerful enough for upgrading major cities from analog to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover most HFC applications in the 550 - 870 MHz range.
Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures. The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing ‘by design’ the best ESD protection levels with no needs for external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a see-through cap that makes it easy to distinguish them from counterfeit products.

Products ` BGY588C, BGE788C, CGY888C and BGY835C push-pull amplifiers ` BGD712C, CGD944C and CGD942C power doublers ` BGO807C and BGO807CE optical receiver Features ` Excellent linearity, stability and reliability ` High power gain ` Extremely low noise ` Silicon Nitride passivity ` GaAs HFET dies for high end devices Benefits ` Compliant with Chinese SARFT HFC networks standard ` Transparent cap allows confirmation of product authenticity ` Rugged construction

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BGY588C, BGE788C, CGY888C and BGY835C The last stage of an HFC network structure is called a terminating amplifier or ‘user amplifier’ as it is close to the subscribers. Each terminating amplifier requires a single module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 860 MHz systems. These modules are fitting perfectly in the Chinese ‘Connecting to Every Village’ projects.

BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese ‘Connecting to Every Village’ projects.

IN port

PAD

EQ

BGY588C BGE788C BGY835C CGY888C

OUT port
bra820

IN port

PAD

EQ

BGY785A BGY787

BGD712C

OUT port
bra821

CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 860 MHz.
CGD942C/CGD944C
PAD H L OUT port 1

BGO807CE BGO807CE is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807CE enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807CE is the perfect fit.

CGD942C/CGD944C
PAD PAD EQ H L OUT port 2

BGD812
PAD PAD EQ H L OUT port 1

BGO807CE
(N + 1)
RF switch

BGY885A BGD812 BGY887

CGD942C/CGD944C
PAD H L OUT port 3

BGO807CE

BGD812
PAD H L OUT port 2
bra823

BGY885A

CGD942C/CGD944C BGO807CE
PAD H L OUT port 4
bra822

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C-family application information
Application Optical node Optical receiver Distribution amplifier Line extender amplifier Terminating amplifier • • • • • BGY588C BGE788C CGY888C BGD712C • • • • BGO807C • • • • CGD944C • • • • CGD942C • •

Push-pull amplifiers
Parameters Power gain (dB) Slope (dB) Composite triple beat (dBc) Composite 2nd order distortion (dBc) Noise (@ f MAX ) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34.5 0.2 - 1.7 -57 -62 8 325 40 - 550 BGE788C 34.2 0.3 - 2.3 -49 -52 8 305 40 - 750 CGY888C 35.5 1.5 typ. -66 -64 3 typ. 280 40 - 870 BGY835C 34 1.5 typ. -60 -55 7 340 40 - 870

Power doublers
Parameters Power gain (dB) Slope (dB) Composite triple beat (dBc) Composite 2nd order distortion (dBc) Noise (@ f MAX ) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGD712C 18.5 0.5 - 1.5 -62 -63 7 395 40 - 750 CGD944C 25 1-2 -66 -67 5 450 40 - 870 CGD942C 23 1-2 -66 -67 5 450 40 - 870

Optical receiver
Parameters Responsivity (V/W) Slope (dB) Third order intermodulation distortion (dB) Second order intermodulation distortion (dB) Noise (@ f MAX ) pA/Sqrt (Hz) Total current consumption (mA) Frequency range (MHz) Connector min. range max. max. max. typ. range BGO807C 800 0-2 -71 -54 8.5 190 40 - 870 - / SCO / FCO BGO807CE 800 0-2 -71 -53 8.5 190 40 - 870

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2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C Complete GaAs amplifier solutions for Chinese HFC networks
These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard, provide complete functionality in a format that reduces chip-count and lowers overall cost.

Products ` 870-MHz push-pull amplifier: CGY888C ` 870-MHz power doublers: CGD942C (23-dB gain), CGD944C (25-dB gain) Features ` GaAs HFET process for best performance and lowest chip-count ` Excellent linearity, stability, and reliability ` High power gain ` Extremely low noise ` Excellent return-loss properties Benefits ` Fully compliant with Chinese SARFT HFC networks standard ` Transparent cap confirms product authenticity ` Rugged construction ` Unconditionally stable ` Thermally optimized design Applications ` Hybrid Fiber Coax (HFC) applications ` Line extenders ` Trunk amplifiers ` Fiber deep-optical-node (N+0/1/2) To support Chinese HFC CATV infrastructure applications as a single-source supplier, NXP offers the C-family, a complete line of dedicated RF amplifier modules that deliver the very high level of performance required for next-generation HFC TV networks. The family includes the 870-MHz push-pull amplifier CGY888C, a GaAs upgrade of NXP’s industry-leading BGY888 and BGY835C products, and two 870-MHz power doublers: the CGD942C, which has a typical gain of 23 dB, and the CGD944C, with a typical gain of 25 dB. The modules are flexible enough to connect rural communities as part of China’s ‘Connect Every Village’ project, and powerful enough to upgrade major cities from analog to high-end digital services.

The modules have been tested under Chinese raster conditions and fully comply with the Chinese SRAFT standard. They also cover most HFC applications in the range of 550 to 870 MHz and are compatible with previous generations of NXP HFC solutions, so they can be used to upgrade existing networks to a higher level of performance. Produced in NXP’s advanced GaAs HFET die process, the modules deliver excellent linearity with extremely low noise, and work seamlessly together. The GaAs process improves performance and, by reducing chip count, saves overall cost. It offers stronger signal strength than Si, so there are fewer amplifiers required, and it provides superior ESD protection compared to GaAs pHEMT processes, so there’s no need for external TVS components. The CGY888C is well suited for use in the last stage of an HFC network, which is known as a terminating amplifier or a user amplifier since it is close to subscribers. The CGD942C and the CGD944C offer higher output power and better CTB and CSO than other power doublers, so they are ideal for use in HFC networks that have optical nodes with multiple out-ports. The modules enable each port to cover at least 125 subscribers directly. All the C-family modules are delivered with transparent caps that make it easy to distinguish them from counterfeit products. Unmatched new ESD protection levels: All new standard NXP CATV SOT115 hybrids, power doublers or push pulls, released in 2009 and onwards will have a build-in extra protection on top of the existing one for very high level ESD surges. Those surge levels will leave our devices without any damage or destruction. Human body or biased ESD levels will increase respectively to 2000 V and 1500 V which is making now NXP CATV devices the most ESD robust product on the market today.

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2.8

Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks

NXP high-gain power doublers CGD104xHi and push-pulls CGY104x
Designed for 1-GHz “sustainable networks,” these high-performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-end services like HDTV, VoIP, and digital simulcasting.

Key features ` Excellent linearity, stability, and reliability ` High power gain for power doublers ` Extremely low noise ` Dark Green products ` GaAs HFET dies for high-end applications ` Rugged construction ` Superior levels of ESD protection ` Integrated ringwave protection ` Design optimized for digital channel loading ` Temperature compensated gain response ` Optimized heat management ` Excellent temperature resistance Key benefits ` Simple upgrade to 1-GHz capable networks ` Low total cost of ownership ` High power-stress capability ` Highly automated assembly Key applications ` Hybrid Fiber Coax (HFC) applications ` Line extenders ` Trunk amplifiers ` Fiber deep-optical-node (N+0/1/2) ` Bridgers

New CATV GaAs platform lay-out

The NXP power doublers CGD104xH and CGD104xHi are ideal for use in line extenders and trunk amplifiers. They support fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. The GaAs HFET die process delivers high gain, excellent CTB and CSO ratings, along with lower current. The new NXP CGY1047x push-pull family is the first line-up on the market combining very low noise, best-in-class distortion parameters, and low “carbon footprint” capabilities. It delivers the best performance for the lowest power consumption, so it reduces OPEX and CO2 emissions All of NXP’s 1-GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high power overstress capabilities, and extremely high ESD levels. As a result, they also reduce the cost of ownership. The GaAs die is inserted in a HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the module’s high performance stable over a wide range of temperature. Assembly is fully automated and requires almost no human intervention, so repeatability remains very high.

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Upcoming products Additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of

23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of 32 dB. NXP is also developing a new, highly integrated power doubler. The CGD1046Hi will deliver, in one IC, a 26-dB power gain with 60-dBmV output power and excellent ESD protection, for the ultimate in high-quality, distortionless devices.

Quick reference data CATV 1 GHz power doublers and push pulls
CATV 1- GHz power doublers Parameters
Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@fMAX) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range

CGD1040Hi 21 1.5 -69 -68 6 440 40 - 1003

CGD1042H 23 1.5 -69 -68 6 450 40 - 1003

CGD1042Hi 23 1.5 -69 -68 6 440 40 - 1003

CGD1044H 25 1 -69 -68 6 450 40 - 1003

CGD1044Hi 25 1.5 -69 -68 6 440 40 - 1003

CGD1046Hi* 27 0.5 - 2.0 -73 -68 5 460 40 - 1003

CATV 1-GHz push-pulls Parameters
Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@fMAX) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range

CGY1041 22 1.5 -62 -62 5.5 250 40 - 1003

CGY1043 24 1.5 -64 -64 5.5 250 40 - 1003

CGY1049* 30 2 -62 -64 4.5 250 40 - 1003

CGY1032* 33 1.5 -62 -64 4.5 250 40 - 1003

* = check status at 3.1 new products, as this type has not been released yet for mass production.

CGD104xHi
PAD H L OUT port 1

CGD104xHi
PAD PAD EQ H L OUT port 2

CGD104xHi
PAD H L OUT port 3

(N + 1)

RF switch

CGD104xHi
PAD H L OUT port 4
bra822

An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi NXP Semiconductors RF Manual 14th edition 53

2.9

Doherty amplifier technology for state-of-art wireless infrastructure

Best in class PA designs enable considerable energy savings
NXP’s latest power amplifier designs enable wireless infrastructure to run with significantly higher energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible, NXP combines its latest generations LDMOS technology (Gen6 & 7) with the Doherty concept. This way, the optimized intrinsic performance of our LDMOS technology combines perfectly with the extrinsic Doherty technology into very efficient, high gain, readily linearizable, and lower operation cost power amplifiers. Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely dormant because the dominant mobile communication system modulation techniques (FM, GMSK and EDGE) did not require high peak-to-average ratio (PAR) signals. However, the high power added efficiency architecture of the Doherty amplifier has made it the preferred option for today's service providers for base stations transmitting 3G, 4G or multi-carrier standards. NXP’s Doherty amplifiers ensure high-efficiency while maintaining a very similar peak power capability of two transistors combined. The input and output sections are internally matched, benefiting the amplifier designs with high gain and good gain flatness and phase linearity over a wide frequency band.
Integrated Doherty NXP can even offer the world’s first fully integrated Doherty designs: From the outside these devices look like an ordinary transistor. In fact, they are completely integrated Doherty amplifiers that deliver the highest efficiency levels for base station applications. With the ease of design-in of an ordinary class AB transistor, they also provide significant space and cost savings. Key features & benefits ` Contains splitter, main- and peak amplifier, delay lines and combiner in one package - 40% efficiency @ 10 W average power - no additional tuning in manufacturing ` Design is as easy as with a single class AB transistor ` Ideally suited for space-constrained applications (e.g. remote radio heads, antenna arrays) ` Currently available for TD-S-CDMA (BLD6G21L(S)-50) and W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details

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Discrete Doherty amplifiers Next to the integrated versions, NXP also offers product demonstrators for very efficient, high power, discrete 2- and 3- way Doherty amplifiers. The 2 way designs based on the BLF7G22LS-130 device deliver 47.0 dBm (50 W) with 43% efficiency and 15.7 dB gain for W-CDMA applications.

Key features & benefits ` Most efficient Doherty amplifier designs available to date ` Production proven, very consistent designs ` NXP’s LDMOS provides unsurpassed ruggedness ` Currently available for the following frequency bands: - 728 - 821 MHz - 869 - 960 MHz - 1805 - 1880 MHz (DCS) - 1930 - 1990 MHz (PCS) - 1880 - 2025 MHz (TD-SCDMA) - 2110 - 2170 MHz (UMTS / LTE) - 2300 - 2400 MHz (WiBRO / LTE) - 2500 - 2700 MHz (WiMAX / LTE) - 3300 - 3800 MHz (WiMAX) All our product demonstrators are supported by comprehensive support documentation and hardware. Please see chapter 3.7.1.7 for a complete list of available designs.

Our flagship 3-way Doherty demonstrator even achieves 48% efficiency at 48 dBm (63 W) average output power and 15.0 dB gain with a 2 carrier W-CDMA signal. The current design covers the W-CDMA standard for band 1 operation and is tailored towards high yield, minimum tuning, volume manufacturing.

Featured Doherty designs
Freq band (MHz) 728-756 790-821 869-894 925-960 1805-1880 1930-1990 2110-2170 2300-2400 2500-2700 3400-3600 PPEAK (dBm) 59.1 58 58 58.9 58.2 58 58 49.5 52.5 51 POUT-AVG (dBm) 50.5 50 50 50 50 50 50 42 44.5 43 VDS (V) 32 32 32 32 28 32 32 28 28 28 Gain (dB) 19 19 19 22 16 15.5 15 14.5 14 11.5 Drain Eff. (%) 40 47 46 44 42 37 40 43 38 32 Type SYM SYM SYM SYM / MMPP SYM / MPPM SYM SYM SYM SYM SYM Main transistor BLF6G10-260PM BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN 1/2 BLF7G27-75P 1/2 BLF6G27-150P BLF6G38-50 Peak transistor BLF6G10-260PM BLF6G10LS-200RN BLF6G10-200RN BLF6G10-260PRN BLF7G20LS-250P BLF6G20-230PRN BLF6G22-180PN 1/2 BLF7G27-75P 1/2 BLF7G27-150P BLF6G38-50

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2.10

Boost efficiency and lower system cost in wireless infrastructure with GaN

NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables high-power amplifiers that deliver very high efficiency in next-generation wireless communication systems.

Features ` Power density that is up to five times higher than Si LDMOS ` 50 V operation ` High gain ` High efficiency ` High reliability ` Low parasitics Benefits ` High frequency combined with high power ` Broadband operation that lets a single power amplifier function at multiple frequencies ` Enabling technology for next-generation, high-power, Switch Mode Power Amplifier (SMPA) architectures ` Lowers system costs and operational expenditures ` Ideal for tower-top base stations Applications ` Cellular base stations ` WiMAX ` Broadcast ` Radar Collaborating with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics, NXP Semiconductors is developing a gallium-nitride (GaN) process technology that boosts performance of next-generation RF power amplifiers. The new GaN process, with its high frequency combined with high power, puts NXP in the ideal position of being able to support future applications while continuing to evolve its well-established LDMOS technology. The GaN technology delivers numerous benefits to manufacturers of infrastructure equipment. Using the GaN technology in a transmitter represents a significant cost savings in system manufacturing, along with major improvements in system performance and flexibility.

Most of today’s base station power amplifiers are limited to specific applications. The new GaN-based technology lets operators use a “universal transmitter” to switch between systems and frequencies, so they can instantly meet demands in the base station’s coverage area. GaN transistors enable much more efficient power amplifiers and as a result drive down the operational costs of telecom operators. GaN transistors can operate at much higher junction temperatures than Si- and GaAs-based devices, so GaN is an ideal candidate for environments with reduced cooling capabilities, such as tower-top base stations. Also, with its high power densities, GaN has the potential to expand into other areas, including high-power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm. NXP’s first GaN broadband power amplifiers are expected to be available in 2010, with Switch Mode Power Amplifiers (SMPAs) following quickly thereafter.
Performance (targets)
Saturated output power at 50 V Frequency Maximum PAE Linear power gain 2C-WCDMA linear efficiency with DPD 100 W 2.2 GHz 68% 19 dB 40% at –52 dBc IM3 at 8 dB OPBO

Assembly of GaN power bar in standard ceramic package
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2.11

Looking for the leader in SiGe:C? You've just found us!

NXP QUBiC4 process technology
NXP's innovative high performance SiGe:C QUBiC4 process allows customers to incorporate more functionality into devices with less space, competitive cost, superb reliability and significant manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speeds the migration from GaAs components to silicon by enabling cutting-edge products with best in class low-noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance and output power. NXP’s QUBiC is a mature process in mass production since 2002 with continuous performance upgrades since then. The QUBiC4 process is automotive qualified and dual sourced in two high volume NXP-owned 8 inch waferfabs providing flexible, low cost manufacturing with high yields and very low ppm in the field.
QUBiC4 in 3 variants, each having it’s benefits for specific application areas: QUBiC4+ The QUBiC4+ BiCMOS process features 0.25 μm CMOS with 5 metal layers for integration of dense digital logic based smart functionality, a rich set of active and passive devices for high-frequency mixed-signal designs including thick top metal layers for high quality inductors. The device set; includinges a 37 GHz FT NPNs with 3.8 V breakdown voltage (BVce0) and low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz high voltage NPN with 5.9 V breakdown voltage, differential and single ended varicaps with Q-factor>30, scalable inductors with Q-factor>20, 800 MHz FT lateral PNP’s, 0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide capacitor and an 5 fF/μm2 MIM capacitor, 1 to 6 fF/μm2 oxide capacitors and various other devices including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS transistorscapacitor. The QUBiC4+ process is: silicon based and , ideal for applications up to 5 GHz (Ft = 37 GHz , NF < 1.1 dB @ 1.2 GHz) and e.g. for medium power amplifiers up to 33 dBm. QUBiC4X The QUBiC4X BiCMOS process is a SiGe:C based extension of the QUBiC process for high-frequency mixed signal designs and offers on top of features the a rich set of devices for QUBiC high-frequency mixed-signal designs; including also a 140 GHz FT NPN with 2.5 V breakdown voltage and very low noise figure (NF < 1.0 @ 10GHz). s, 0.25 μm CMOS, 220, a variety of resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor. The QUBiC4X: first SiGe:C process is, ideal for applications typically up to 30 GHz (Ft = 137 GHz , NF < 0.8dB @ 10 GHz) and ultra low noise applications, e.g. LNAs and mixers. QUBiC4Xi The QUBiC4Xi BiCMOS process further enhances the QUBiC4X process and offers additionally a features a set of devices for high-frequency mixed-signal designs; including 180 GHz FT NPNs with 1.4 V breakdown voltage and ultra-low noise figure (NF < 0.7 @ 10 Ghz), 0.25 μm CMOS, several resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MI capacitor. QUBiC4Xi is the: newest SiGe:C process improved on Ft (> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @ 10 GHz) and is, ideal for applications beyond 30 GHz, e.g. LO generators.

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QUBiC4Xi QUBiC4X

SiGe:C
ft/ fmax = 180/200 GHz

SiGe
ft/ fmax = 137/180 GHz

+VPNP +TFR

QUBiC4+ ` Baseline, 0.25um CMOS, single poly, 5 metal ` Digital gate density 26k gates/mm2 ` fT/fMAX= 37/90 GHz ` +TFR – Thin Film Resistor ` +DG – Dual Gate Oxide MOS ` +HVNPN – High Voltage NPN ` +VPNP – Vertical PNP ` -4ML – high density 5fF/µm2 MIM capacitor ` Wide range of active and high quality passive devices ` Optimized for up to 5GHz applications QUBiC4X ` SiGe:C process ` fT/fMAX= 137/180 GHz ` optimized for up to 15 GHz applications QUBiC4Xi ` Improves fT/fMAX up to 180/200 GHz ` Optimized for ultra-low noise for microwave above 10 GHz
QUBiC4X 2006 CMOS 0.25um, Bipolar LV 0.4um, Double poly, Deep trench, SiGe:C 137/180 (SiGe:C) 60/120 (SiGe:C) 3.2 / 2.0 V planned 2.5 V 10GHz: 1.0 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 µm top Metal 2 µm M4 NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr tbd 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate LPNP, Isolated-NMOS tbd 35 (MIM) QUBiC4X 2008 CMOS 0.25um, Bipolar LV 0.3um, Double poly, Deep trench, SiGe:C 180/200 (SiGe:C) tbd (SiGe:C) 2.5 / 1.4 V planned 2.5 V 10GHz: 0.7 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 µm top Metal NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr tbd 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate LPNP, Isolated-NMOS tbd 35 (MIM)

QUBiC4+
BiCMOS
ft/f max = 37/90 GHz

+DG +HVNPN -4ML

Features Release for production CMOS/Bipolar LV NPN Ft/Fmax (GHz) HV NPN Ft/Fmax (GHz) NPN BVce0: HV/LV ** V-PNP Ft / BVcb0 (GHz / V) CMOS Voltage / Dual Gate Noise figure NPN (dB) RFCMOS Ft (GHz) Isolation (60 dB @ 10 GHz) Interconnection (AlCu with CMP W Plugs) Capacitors Resistors  (Ohm/sq) Varicaps (single-ended  & differential) Inductors  (1.5nH @ 2 Ghz) - scalable Other devices Mask count

QUBiC4/4+/4DG 2002/2004/2006 CMOS 0.25um, Bipolar 0.4um, Double poly, Deep trench, Si 37/90 (Si) 28/70 (Si) 5.9 / 3.8 V 7 / >9 2.5 / 3.3 V 2GHz: 1.1 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 µm top Metal NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270) 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate LPNP, Isolated NMOS 31 / 32 (MIM) / 33 (DG)

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2.12

Microwave / Radar

NXP, your partner in High Performance microwave applications
NXP has a 50+ years history in semiconductor technology and component design. For more than 3 decades we are leading in providing high performance RF technologies for microwave applications. The company has built a strong position in the field of RF small signal and power transistors for microwave amplifiers with a solid and growing, and best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band transistors (2700 - 3500 MHz) based on laterally diffused metal-oxide-silicon (LDMOS). To further strengthen our position towards the future, we currently develop new high power and high-bandwidth technologies based on gallium nitride (GaN) material. Another enabling technology is NXP’s BICMOS process QUBiC that is available in several variants with fT up to 200 GHz, each specialized to address specific small signal RF applications. The product portfolio encompasses: - Low noise amplifiers (LNA) - Variable gain amplifiers (VGA) - Mixers, - Local oscillators (LO) - LO Generators Coming from a component background, NXP now also focuses on architectural breakthroughs by highly integrated products for microwave and millimeter wave. One example is a family of LO Generators from 7G Hz to 15 GHz with integrated Phase-Locked Loop and Voltage Controlled Oscillator. Another example is an integrated RF power module in S-band (3.1-3.5 GHz) at 200 W. Both products are highlighted in the following: RF small signal product highlight: LO generators TFF11xxxHN Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership.

Features ` Lowest noise LO generators for 7 to 15 GHz range ` Maximum power consumption for all types, typical 330 mW ` Phase-noise compliant with IESS-308 (Intelsat) ` Proven QUBiC4X SiGe:C technology (120 GHz fT process) ` External loop filter ` Differential input and output ` Lock-detect output ` Internally stabilized voltage reference for loop filter RF Power product highlight ! The BLS6G2933P-200 is the first LDMOS based, industry standard pallet produced by NXP. This pallet offers more than 40% efficiency and includes the complete bias network for S-band applications.

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Features: ` Reduces component count and considerably simplifies radar system design ` P1 dB output power 200 W ` Efficiency > 40% ` Industry standard footprint ` 50 Ω in/out matched for entire bandwidth ` Lightweight heat sink included ` The advantages of LDMOS in comparison with Bipolar - Higher gain and better efficiency - Better ruggedness – overdrive without risk to 5 dB - Improved pulse droop and insertion phase - Very consistent performance – no tuning required - Improved thermal characteristics, no thermal runaway - Non-toxic packaging and ROHS compliance

Microwave applications and bands of operation
System VHF and UHF L-Band S-Band X-band Commercial Avionics DME (Distance Measuring Equipment) Transponders Mode A / Mode S / Mode C / TCAS Military Avionics IFF Transponders (Identification, Friend or Foe) TACAN (Tactical Air Navigation) JTIDS / MIDS (Joint Tactical Information Distribution System) Marine radar 1030 - 1090 MHz 960 - 1215 MHz 960 - 1215 MHz 9300 - 9500 MHz 1030 - 1090 MHz 978 - 1215 MHz Frequency <1 GHz 1200 - 1400 MHz 2700 - 3500 MHz 8000 - 12000 MHz

For a complete list of products see the respective small signal and power microwave pages

60

NXP Semiconductors RF Manual 14th edition

2.13

Digital broadcasting at its best

The BLF881 / BLF888 transistor line-up enables today’s most powerful and efficient digital broadcast transmitter applications

BLF881 The transistor is based on NXP’s new 50V LDMOS technology, and features 140 W RF output power for broadcast transmitter and industrial applications. An unmatched device, the BLF881 can be used in the HF to 1 GHz range. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications – either stand alone or as a driver in combination with the high-power transistor BLF888. The BLF881 is also available in an earless version: BLF881S, enabling an even more compact PCB design. BLF888 Also based on the new 50 V technology created by NXP, the BLF888 is the most powerful LDMOS broadcast transistor to date. The 500 W LDMOS device is specifically designed for digital broadcast transmitter applications. The transistor delivers 110 W average power for a DVB-T signal over the full UHF band from 470 MHz to 860 MHz. The excellent efficiency and ruggedness of this device makes it ideal as the final stage for advanced digital transmitter applications Key benefits ` 50 V operations to achieve highest power levels in the market ` Best-in-class ruggedness designed into all devices ` Best broadband efficiency ` Best-in-class design support ` Very low thermal resistance design for unrivalled reliability Key applications ` Analogue and digital TV transmitters
frange Device
BLF881(S) BLF888

typ. 0.5 kW DVB-T Driver stages

PL(AV) W
120 30 250 110

nD %
48 31 46 31

Gp dB
21 21 19 19

@VDS V
50 50 50 50

(MHz)
0 - 1000 0 - 1000 470 - 860 470 - 860

Mode of operation
2-TONE DVB-T 2-TONE DVB-T
TV exciter DVB-T harmonic filter power monitor

8 × final

typ. 5 kW DVB-T output power

amplifiers

brb339

NXP Semiconductors RF Manual 14th edition

61

3. Product portfolio
NXP RF product catalog: http://www.nxp.com/rf

3.1

New products

DEV = In development CQS = Customer qualification samples RFS = Release for supply
Status May 2010 Planned release

Type NEW: RF diodes BAP64Q BAP70Q

Application / Description

Chapter

Quad pin diodes for e.g. discrete attenuators Quad pin diodes for e.g. discrete attenuators

RFS RFS

Released Released

3.2.2 3.2.2

NEW: SiGe:C transistors BFU610F 6st generation wideband transistor BFU630F 6st generation wideband transistor BFU660F 6st generation wideband transistor BFU690F 6st generation wideband transistor BFU710F 7th generation wideband transistor BFU730F 7th generation wideband transistor BFU760F 7th generation wideband transistor BFU790F 7th generation wideband transistor NEW: Automotive Qualified Wideband MMIC and transistors BGA2002 Low noise wideband amplifier MMIC BFR94A RF wideband transistor BFR94AW RF wideband transistor NEW: SiGe:C MMICs LNA's for GPS and STB BGU7005 SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB BGU7006 SiGe:C MMIC, GPS LNA in wafer level chip-scale package (WLCSP) BGU7007 SiGe:C MMIC, incl matching output for GPS LNA, 18 dB BGU7031 SiGe:C LNA for STB tuning BGU7032 SiGe:C LNA for STB tuning BGU7033 SiGe:C LNA for STB tuning NEW: Mosfets BF1215 BF1216 BF1217 BF1218 BF1118 series

DEV DEV DEV DEV DEV DEV DEV DEV

Q4 2010 Q4 2010 Q4 2010 Q4 2010 Q4 2010 Q4 2010 Q4 2010 Q4 2010

3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1

RFS RFS RFS

Released Released Released

3.4.1 3.3.1 3.3.1

RFS DEV DEV CQS CQS CQS

Released Q4 2010 Q1 2011 Q3 2010 Q3 2010 Q3 2010

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

Double mosfet for STB tuning, world class cross modulation performance Double mosfet for STB tuning, world class cross modulation performance Single mosfet for STB tuning, world class cross modulation performance Double mosfet for TV tuning Mosfet RF switches for antenna loop through

RFS RFS RFS RFS RFS

Released Released Released Released Released

3.5.2 3.5.2 3.5.2 3.5.2 3.5.2

NEW: Medium power amplifier MMICs BGA7124 Medium power amplifier, 24 dBm P1dB, leadless SOT908 BGA7024 Medium power amplifier, 24 dBm P1dB, leaded SOT89 BGA7127 Medium power amplifier, 27 dBm P1dB, leadless SOT908 BGA7027 Medium power amplifier, 27 dBm P1dB, leaded SOT89 BGA7130 Medium power amplifier, 30 dBm P1dB, leadless SOT908 BGA7133 Medium power amplifier, 33 dBm P1dB, leadless SOT908 NEW: Variable Gain Amplifiers (VGA) BGA7350 Dual IF VGA, control range 24 dB BGA7351 Dual IF VGA , control range 28 dB BGA7202 Tx RF VGA, 0.7 - 2.2 GHz BGA7203 Tx RF VGA , 2.1 - 2.8 GHz BGA7204 Tx RF VGA, 0.7 - 2.8 GHz NEW: SiGe:C LNA's for wireless infrastructures BGU7051 Low Noise Amplifier 900 MHz BGU7052 Low Noise Amplifier 1.9 GHz BGU7053 Low Noise Amplifier 2.5 GHz BGU7054 Low Noise Amplifier 3.5 GHz

RFS RFS RFS RFS DEV DEV

Released Released Released Released Q1 2011 Q1 2011

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

DEV DEV DEV DEV DEV

Q4 2010 Q1 2011 Q4 2010 Q1 2011 Q1 2011

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

DEV DEV DEV DEV

Q1 2011 Q2 2011 Q2 2011 Q3 2011

3.4.1 3.4.1 3.4.1 3.4.1

62

NXP Semiconductors RF Manual 14th edition

Type

Application / Description

Status May 2010

Planned release

Chapter

NEW: RF IC's & MMICs for e.g. satellite, VCO/PLL BGA2800 Satellite IF gain block BGA2801 Satellite IF gain block BGA2815 Satellite IF gain block BGA2816 Satellite IF gain block BGA2850 Satellite IF gain block BGA2865 Satellite IF gain block BGA2866 Satellite IF gain block TFF1003HN Low noise LO generator for VSAT applications TFF1007HN Low noise LO generator for VSAT applications TFF11070HN Low noise LO generator for general microwave applications TFF11073HN Low noise LO generator for general microwave applications TFF11077HN Low noise LO generator for general microwave applications TFF11080HN Low noise LO generator for general microwave applications TFF11084HN Low noise LO generator for general microwave applications TFF11088HN Low noise LO generator for general microwave applications TFF11092HN Low noise LO generator for general microwave applications TFF11096HN Low noise LO generator for general microwave applications TFF11101HN Low noise LO generator for general microwave applications TFF11105HN Low noise LO generator for general microwave applications TFF11110HN Low noise LO generator for general microwave applications TFF11115HN Low noise LO generator for general microwave applications TFF11121HN Low noise LO generator for general microwave applications TFF11126HN Low noise LO generator for general microwave applications TFF11139HN Low noise LO generator for general microwave applications TFF11145HN Low noise LO generator for general microwave applications TFF11152HN Low noise LO generator for general microwave applications NEW: RF CATV modules CGY1041 1 GHz, 21 dB gain Push Pull, GaAs HFET SOT115 CGY1043 1 GHz, 23 dB gain Push Pull, GaAs HFET SOT115 CGY1049 1 GHz, 29 dB gain Push Pull, GaAs HFET SOT115 CGY1032 1 GHz, 32 dB gain Push Pull, GaAs HFET SOT115 CGD1046Hi 1 GHz, 26 dB gain Power Doubler, GaAs HFET SOT115 BGO807CE 870 MHz, forward path optical receiver, SOT115 NEW: RF High Speed Data Converters ADC1613D series Dual 16-bit ADC up to 65/80/105/125Msps with serial interface ADC1610S series Single 16-bit ADC up to 65/80/105/125Msps ADC1415S series Single 14-bit ADC up to 65/80/105/125Msps with input buffer ADC1413D series Dual 14-bit ADC up to 65/80/105/125Msps with serial interface ADC1412D series Dual 14-bit ADC up to 65/80/105/125Msps ADC1410S series Single 14-bit ADC up to 65/80/105/125Msps ADC1215S series Single 12-bit ADC up to 65/80/105/125Msps with input buffer ADC1213D series Dual 12-bit ADC up to 65/80/105/125Msps with serial interface ADC1212D series Dual 12-bit ADC up to 65/80/105/125Msps ADC1210S series Single 12-bit ADC up to 65/80/105/125Msps ADC1115S125 Single 11-bit ADC up to 125Msps with input buffer ADC1113D125 Dual 11-bit ADC up to 125Msps with serial interface ADC1015S series Single 10-bit ADC up to 65/80/105/125Msps with input buffer ADC1010S series Single 10-bit ADC up to 125Msps DAC1408D series Dual 14-bit DAC up to 650/750 Msps DAC1405D series Dual 14-bit DAC up to 650/750 Msps DAC1208D series Dual 12-bit DAC up to 650/750 Msps DAC1205D series Dual 12-bit DAC up to 650/750 Msps DAC1008D series Dual 10-bit DAC up to 650/750 Msps DAC1005D series Dual 10-bit DAC up to 650/750 Msps NEW: RF Power cellular transistors BLF7G24L(S)-100(G) Power Gen7 LDMOS transistor for base station applications BLF7G27L(S)-75P Power Gen7 LDMOS transistor for base station applications BLF7G27L(S)-50BN Power LDMOS transistor for base station applications BLF7G27L(S)-100 Power Gen7 LDMOS transistor for base station applications BLF7G27L(S)-140 Power Gen7 LDMOS transistor for base station applications BLF7G22L(S)-250P Power Gen7 LDMOS transistor for base station applications BLF7G20L(S)-300P Power Gen7 LDMOS transistor for base station applications BLF7G20L(S)-200 Power Gen7 LDMOS transistor for base station applications BLF7G20L(S)-250P Power Gen7 LDMOS transistor for base station applications BLF6G10L(S)-40BRN Power LDMOS transistor for base station applications BLF6G10L(S)-260PRN Power LDMOS transistor for base station applications BLF6G07L(S)-260PBM Power LDMOS transistor for base station applications NEW: RF Power Broadcast transistors BLF573 High Voltage RF Power transistor for broadcast/ISM BLF888A(S) High Voltage RF Power transistor for broadcast/ISM NEW: RF Power Microwave transistors BLS7G2729S-300P RF Power transistors for S band BLS6G2933P-200 High voltage RF Power pallet for S band BLS7G2731P-200 High voltage RF Power pallet for S band

RFS RFS RFS RFS RFS RFS RFS RFS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS

Released Released Released Released Released Released Released Released Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010 Q3 2010

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2

CQS CQS DEV DEV CQS RFS

Q2 2010 Q2 2010 Q3 2010 Q3 2010 Q2 2010 Released

3.6.2 3.6.2 3.6.2 3.6.2 3.6.3 3.6.4

CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS RFS CQS RFS CQS RFS

Released Released Released Released Q3 2010 Released Released Released Q3 2010 Released Released Released Released Released Q3 2010 Released Q3 2010 Released Q3 2010 Released

3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2

DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV

Q4 2010 Q2 2010 Q2 2010 Q2 2010 Q3 2010 Q2 2010 Q3 2010 Q3 2010 Q3 2010 Q2 2010 Q2 2010 Q2 2010

3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.3 3.7.1.2 3.7.1.2 3.7.1.2 3.7.1.1 3.7.1.1 3.7.1.1

DEV DEV

Q2 2010 Q3 2010

3.7.2.1 3.7.2.1

DEV DEV DEV

Q4 2010 Q3 2010 Q4 2010

3.7.3.3 3.7.3.3 3.7.3.3 63

NXP Semiconductors RF Manual 14th edition

3.2
3.2.1

RF diodes
Varicap diodes

NEW : Varicap selection guide on www.nxp.com/varicaps Easy-to-use parametric filters help you to choose the right varicap for your design.

Why choose NXP semiconductors’ varicap diodes: ` Reference designs for TV and radio tuning ` Direct matching process ` Small tolerances ` Short leadtimes ` Complete portfolio covering broad frequency range and variety in package (including leadless) ` Reliable volume supply

VCO and FM radio tuning varicap diodes
@ f = 1 MHz Type Package Number of diodes 1 1 1 1 2 1 1 2 1 1 Configuration SG SG SG SG CC SG SG CC SG SG Cd min (pF) BB145B BB156 BB198 BB199 BB201 BB202^^ BB202LX^^ BB207^ BB208-02^ BB208-03^ SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882T SOT23 SOD523 SOD323 6.4 14.4 25 36.5 89 28.2 28.2 76 19.9 19.9 Cd typ (pF) 16 95 81 Cd max (pF) 7.2 17.6 28.5 42.5 102 33.5 33.5 86 23.2 23.2 @ VR = (V) 1 1 1 0.5 1 0.2 0.2 1 1 1 Cd min (pF) 2.55 4.2 4.8 11.8 25.5 7.2 7.2 25.5 4.5 4.5 Cd typ (pF) 4.8 27.6 27.6 Cd max (pF) 2.95 5.4 6.8 13.8 29.7 11.2 11.2 29.7 5.4 5.4 @ VR = (V) 4 7.5 4 2 7.5 2.3 2.3 7.5 7.5 7.5 Cd1/ Cd2 min 2.2 2.7 2.8 3.1 2.5 2.5 2.6 3.7 3.7 Cd1/ Cd2 max 3.9 3.8 3.3 5.2 5.2 @ V1 = (V) 1 1 0.5 1 0.2 0.2 1 1 1 @ V2 = (V) 4 7.5 2 7.5 2.3 2.3 7.5 7.5 7.5 rs typ (Ω) 0.4 0.25 0.25 0.35 0.35 0.2 0.35 0.35 rs max (Ω) 0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5 @f= (MHz) 470 470 100 100 100 100 100 100 100 100

^ = Including special design for FM car radio (CREST-IC:TEF6860). ^^ = Including special design for mobile phone tuner ICs.

Type of connection: SG: Single CC: Common Cathode

TV / VCR / DVD / HDD varicap diodes - UHF tuning
@ f = 1 MHz Type Package Cd min (pF) Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882T SOD882T SOD523 SOD523 SOD323 1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.89 1.7 Cd typ (pF) 2.1 2.1 2.1 2.1 2.1 2 2.04 Cd max (pF) 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18 2.1 @ VR = (V) 28 28 28 28 28 28 10 25 28 Cd1/Cd2 min Cd1/Cd2 typ Cd1/Cd2 max @ V1 = (V) 1 1 1 1 1 1 1 2 0.5 @ V2 = (V) 28 28 28 28 28 28 10 25 28 rs typ (Ω) 0.6 0.6 0.6 0.65 0.65 0.65 0.65 rs max (Ω) 0.75 0.75 0.75 0.75 0.7 0.75 @f= (MHz) 470 470 470 470 470 470 470 470 470 @ Cd = (pF) 9 9 9 9 9 30 9 9 9 2 2 2 2 2 2 2 1.8 ∆Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 @ V2 = (V) 28 28 28 28 28 28 10 25 10 10 10 10 10 5 5 10 @ Ns =

8.2 8.45 8.45 8.45 8.45 6 6.3 8.9

9 9 9 9 9 9 7 7.3 -

10 10.9 10.9 10 10.9 12

Bold = Highly recommended product

64

NXP Semiconductors RF Manual 14th edition

TV / VCR / DVD / HDD varicap diodes - VHF tuning
@ f = 1 MHz Type Package Cd min (pF) Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 SOD323 SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD523 SOD882T SOD323 SOD523 SOD882T SOT23 2.4 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57 0.7 0.7 0.7 4.3 Cd typ (pF) 2.6 2.7 2.6 2.6 2.6 2.7 2.7 2.75 2.75 Cd max (pF) 2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92 1.055 1.055 1.055 6 @ VR = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 Cd1/ Cd2 min 14.5 20.6 13.5 13.5 13.5 20.6 11 11 12 12 5 Cd1/ Cd2 typ 15 22 15 15 15 22 22 14 Cd1/ Cd2 max 16 16 6.5 @ V1 = (V) 1 1 1 1 1 1 1 2 2 0.5 0.5 0.5 3 @ V2 = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 rs typ (Ω) 1 0.65 0.65 0.7 1 1 2 rs max (Ω) 0.9 1.2 0.8 0.8 1.2 0.75 0.75 3 3 0.7 @f= (MHz) 100 100 100 100 470 100 100 470 470 470 470 470 200 @ Cd = (pF) 12 30 30 30 30 30 30 9 9 9 25 2 2 2 2 2 2 2 2 2 ∆Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 2 @ V2 = (V) 28 28 28 28 28 28 28 25 25 10 10 10 10 5 10 10 10 10 @ Ns =

Bold = Highly recommended product

3.2.2

PIN diodes
700
brb407

NEW : Pin diode selection guide on www.nxp.com/pindiodes Easy-to-use parametric filters help you to choose the right pin diode for your design. Why choose NXP Semiconductors’ PIN diodes: ` Broad portfolio ` Unrivalled performance ` Short leadtimes ` Low series inductance ` Low insertion loss ` Low capacitance

Cd (fF) 600 500 400 300 200 100 0 10−1 BAP65LX BAP65LX

Freq = 100 MHz, Cd @ VR = 0 V rD @ 0.5 mA rD @ 10 mA

BAP50LX BAP63LX BAP63LX BAP1321LX BAP51LX BAP51LX BAP1321LX BAP142LX BAP142LX BAP64LX BAP70-02

BAP50LX

BAP64LX BAP70-02

1

10 rD (Ω)

102

25 Isolation (dB) 20 BAP50LX 15 BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX

brb408

Freq = 1800 MHz, Isolation @ VR = 0 V Insertion Loss @ 0.5 mA Insertion Loss @ 10 mA BAP70-20 BAP51LX BAP142LX BAP1321LX BAP63LX BAP70-02 BAP50LX BAP64LX

10

5

BAP65LX

BAP65LX

0 10−2

10−1

1 Insertion Loss (dB)

10

Look for more graphs showing the Pin diode line-up at other frequencies on our web site: www.nxp.com/pindiodes

PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ (Ω) 2.3 2.5 2.5 2.5 rD max (Ω) 3.3 3.5 3.5 3.5 @ IF = 1 mA rD typ (Ω) 0.94 1 1 1 1 1.87 1.95 1.95 1.95 rD max (Ω) 3 3 3 3 @ IF = 10 mA rD typ (Ω) 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 rD max (Ω) 0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8 @ VR =0V Cd typ (pF) 0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 Cd max (pF) 0.85 0.9 0.9 0.9 0.9 @ VR = 20 V Cd typ (pF) 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3 Cd max (pF) 0.3 0.32 0.32 0.35

BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W

SOD882T SOD523 SOD323 SOT23 SOT323 SOD882T SOD523 SOD323 SOT323

1 1 1 2 2 1 1 1 2

SG SG SG CC CC SG SG SG CC

30 30 30 30 30 50 50 50 50

100 100 100 100 100 100 100 100 100

NXP Semiconductors RF Manual 14th edition

65

PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ (Ω) 3.3 3.4 3.4 3.4 3.3 3.3 rD max (Ω) 4.5 5 5 5 5 5 @ IF = 1 mA rD typ (Ω) 2.2 2.4 2.4 2.4 2.4 2.4 rD max (Ω) 3.3 3.6 3.6 3.6 3.6 3.6 @ IF = 10 mA rD typ (Ω) 0.8 1.2 1.2 1.2 1.2 1 rD max (Ω) 1.2 1.8 1.8 1.8 1.8 1.8 @ f = 1 MHz @ VR @ VR = 20 V @ VR = 1 V =0V Cd Cd Cd Cd Cd max typ typ max typ (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26

BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX

SOD882T SOD523 SOD323 SOT23 SOD882T SOD882T

1 1 1 2 1 1

SG SG SG SR SG SG

50 60 60 60 60 50

100 100 100 100 100 100

PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ (Ω) 4.9 5.5 5.5 5.5 5.5 5.5 rD max (Ω) 9 9 9 9 9 @ IF = 1 mA rD typ (Ω) 3.2 3.6 3.6 3.6 3.6 3.6 rD max (Ω) 6.5 6.5 6.5 6.5 6.5 @ IF = 10 mA rD typ (Ω) 1.4 1.5 1.5 1.5 1.5 2 rD max (Ω) 2.5 2.5 2.5 2.5 2.5 @ VR =0V Cd typ (pF) 0.3 0.4 0.4 0.4 0.4 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3 Cd max (pF) 0.4 0.55 0.55 0.55 0.55 @ VR = 20 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2 Cd max (pF) 0.3 0.35 0.35 0.35 0.35 -

BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W

SOD882T SOD523 SOD323 SOT323 SOT323 SOT323

1 1 1 2 2 2

SG SG SG SR CC CA

60 60 50 50 50 50

100 50 50 50 50 50

PIN diodes : typical rD @ 1 mA = 10, attenuator/swithcing diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ (Ω) 20 20 20 20 20 20 20 20 20 rD max (Ω) 40 40 40 40 40 40 40 40 40 @ IF = 1 mA rD typ (Ω) 10 10 10 10 10 10 10 10 10 rD max (Ω) 20 20 20 20 20 20 20 20 20 @ IF = 10 mA rD typ (Ω) 2 2 2 2 2 2 2 2 2 @ VR = 0V Cd rD max typ (Ω) (pF) 3,8 0.52 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.37 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 Cd max (pF) @ VR = 20 V Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35

BAP64Q BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W

SOT753 SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323

4 1 1 2 2 2 2 2 2

SR SG SG SR SR CC CC CA CA

100 175 175 175 100 175 100 175 100

100 100 100 100 100 100 100 100 100

PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) 50 50 50 50 50 50 50 100 @ IF = 0.5 mA rD typ (Ω) 25 25 25 25 25 25 26 31 rD max (Ω) 40 40 40 40 40 40 40 50 @ IF = 1 mA rD typ (Ω) 14 14 14 14 14 14 14 16 rD max (Ω) 25 25 25 25 25 25 25 26 @ VR = @ IF = 10 mA 0V Cd rD rD max typ typ (Ω) (Ω) (pF) 3 5 0.4 3 5 0.4 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.4 2.6 4.4 0.48 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 0.34 Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 0.17 Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 0.3 @ VR = (V) 5 5 5 5 1 5 5 20

BAP50-02 SOD523 1 BAP50-03 SOD323 1 BAP50-04 SOT23 2 BAP50-04W SOT323 2 BAP50-05 SOT23 2 BAP50-05W SOT323 2 BAP50LX SOD882T 1 BAP64LX^ SOD882T 1 ^ = attenuator / switching diode

SG SG SR SR CC CC SG SG

50 50 50 50 50 50 50 60

PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ (Ω) 77 77 77 77 77 77 rD max (Ω) 100 100 100 100 100 100 @ IF = 1 mA rD typ (Ω) 40 40 40 40 40 40 rD max (Ω) 50 50 50 50 50 50 @ IF = 10 mA rD typ (Ω) 5.4 5.4 5.4 5.4 5.4 5.4 rD max (Ω) 7 7 7 7 7 7 @ VR =0V Cd typ (pF) 0.6 0.57 0.57 0.6 0.6 0.57 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.43 0.4 0.4 0.43 0.43 0.4 Cd max (pF) @ VR = 20 V Cd max (pF) 0.25 0.2 0.2 0.25 0.25 0.2 Cd typ (pF) 0.3 0.25 0.25 0.3 0.3 0.25

BAP70Q BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM

SOT753 SOD523 SOD323 SOT323 SOT23 SOT363

4 1 1 2 2 4

SR SG SG SR CC SR

50 50 50 50 50 50

100 100 100 100 100 100 SG = Single SR = Series

Bold = highly recommended product Bold Red = New, highly recommended product 66 NXP Semiconductors RF Manual 14th edition

CC = Common Cathode CA = Common Anode

3.2.3

Band-switch diodes

Why choose NXP Semiconductors’ bandswitch diodes: ` Reliable volume supplier ` Short leadtimes ` Low series Inductance ` Low Insertion loss ` Low capacitance ` High reverse Isolation

Type BA277 BA591 BA891 BAT18

Package SOD523 SOD323 SOD523 SOT23

VR max (V) 35 35 35 35

IF max (mA) 100 100 100 100

rD max (Ω) 0.7 0.7 0.7 0.7

@ IF = (mA) 2 3 3 5

@f= (MHz) 100 100 100 200

Cd max (pF) 1.2 0.9 0.9 1

@ VR = (V) 6 3 3 20

@f= (MHz) 1 1 1 1

Bold = Highly recommended product

3.2.4

Schottky diodes

NEW : Schottky diode selection guide on www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help you to choose the right schottky diode for your design.

Why choose NXP Semiconductors’ schottky diodes ` (Very) low diode capacitance ` (Very) low forward voltage ` Single and triple-isolated diode ` (Ultra / very) small package Applications ` Digital applications: - ultra high-speed switching - clamping circuits ` RF applications: - diode ring mixer - RF detector - RF voltage doubler Low-capacitance Schottky diodes
Type BAT17 PMBD353 PMBD354^ 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 Package SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 Configuration single dual series dual series single triple isolated single triple isolated single dual series dual c.c dual c.a. triple isolated single VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15 IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V

^ Diodes have matched capacitance NXP Semiconductors RF Manual 14th edition 67

3.3
3.3.1

RF Bipolar transistors
Wideband transistors

NEW : RF wideband transistor selection guide on www.nxp.com/rftransistors Easy-to-use parametric filters help you to choose the right RF wideband transistor for your design.

Why choose NXP Semiconductors’ wideband transistors st th ` Broad portfolio (1 - 7 generation) ` Short leadtimes ` Smallest packages ` Volume delivery

Wideband transistors The fT-IC curve represents Transition Frequency (fT) characteristics as a function of collector current (IC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC) & similar transition frequencies (fT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.

Wideband transistors line-up per frequency
100
(38) (39) (40) bra510 (41) 7th generation (35) (27) (36) (37) 6th generation (32) 5th generation 4th generation

fT (GHz)
(26) (25)

(33) (34)

(29)

(31) (19) (20) (14) (21) (15) (16) (11) (7) (8) (4) (9) (10) (22) (23)

10

(30)

3rd generation (12)

(18)

2nd generation

(1)

(3)

1 0.1

1st generation

0.2

0.5

1

2

5

10

20

50

100

200

500 IC (mA)

1000

PIN 1 2 3 4 1 2 3 4 1 2 3 4 68

DECRIPTION Type (see Fig.1) collector base emitter emitter Type/X (see Fig.1) collector emitter base emitter Type/XR (see Fig.2) collector emitter base emitter

4

3

3

4

1

2 Figure 1

2

1 Figure 2

NXP Semiconductors RF Manual 14th edition

Wideband transistors (RF small signal) RF power transistors for handheld equipment
@ f = (MHz) VCEO (max) (V) GUM (typ) (dB) @ IC = (mA) @ VCE = (V) 3.6 3.6 3.6 @ f = (MHz) @ IC = (mA) 5 5 5 -5 -10 5 5 5 5 45 15 5 5 5 5 5 2000 1000 2000 1000 1000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 10 10 10 -10 -5 8 8 8 8 10 8 8 8 8 8 8 @ VCE = (V) 69

P tot (max) (mW)

Package

BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81

SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223

8 8 10 10 8 10 9.5

IC (max) (mA)

250 250 250 500 250 250 500

400 400 400 2000 2100 2000 2000

NPN NPN NPN NPN NPN NPN NPN

Polarity

Type

7 7 7 -

1900 1900 1900 -

1 1 1 -

RF wideband transistors generation 1 - 3
P tot (max) (mW) GUM (typ) (dB) GUM (typ) (dB) @ f = (MHz) @ f = (MHz) @ IC = (mA) @ f = (MHz) @ VCE = (V) @ IC = (mA) @ VCE = (V) @ IC = (mA) VCEO (max) (V) @ VCE = (V) 5 5 1 1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5 8 8 8 8 10 8 8 8 8 8 8

f T (typ) (GHz)

IC (max) (mA)

NF (typ) (dB)

Gemeration

Package

BFS17 BFS17W BFT25 BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR94A^ BFR93AR BFR93AW BFR94AW^

1st 1st 1st 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd

3 3 1 18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9 16 15 22 22 22 14 14 8 8 8 22 14 8 8 8 8 8

SOT23 SOT323 SOT23

1 1.6 2.3

15 15 5 5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12 15 10 15 15 15 10 10 12 12 12 15 10 12 12 12 12 12

25 300 NPN 50 300 NPN 6.5 30 NPN 6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50 150 100 200 200 200 50 50 35 35 60 200 50 35 35 35 35 35 32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300 1000 1000 400 400 2000 380 380 300 300 700 2250 300 300 300 300 300 300

Polarity

Curve

Type

18

500

1

1

12

800 1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000 1000 800 800 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 2000

1

1

4.5 4.5 3.8

500 500 500 1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500 1000 1000 1000 1000 500 1000 1000 1000 1000 1000 1000

2 2 1 0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10 15 15 5 5 45 5 5 5 5 5 5

SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4 SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT23 SOT323 SOT323 7 8 5 5 7 8 8 6 6 6 7 8 6 6 6 5 5

NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 16 18 13 13 13 17 17 16 16 11 13 13 13 13 13 13 500 500 900 900 900 1000 1000 1000 1000 900 1000 1000 1000 1000 1000 1000 100 50 80 80 70 15 15 30 30 70 15 30 30 30 30 30

18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10 10 8 4 4 12 8 8 8 8 12 8 8 8 8 8 8 12 15 7.5 7.5 7.5 10 10 10 10 13.5 5.5 8 7 7 7 8 8

0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4 100 50 80 80 70 15 15 30 30 45 70 15 30 30 30 30 30 10 8 4 4 12 8 8 8 8 10 12 8 8 8 8 8 8 1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.9 1.5 1.5

3 2.1 3 3 3 2.5 2.5 2.3 2.3 3 2.7 3 3 3 2.1 2.1

Bold = Highly recommended product Bold Red = New, highly recommended product ^ = automotive qualified

NXP Semiconductors RF Manual 14th edition

NF (typ) (dB) -

RF wideband transistors generation 4 - 4.5
PL(1dB) (typ) (dBmW)

P tot (max) (mW)

GUM (typ) (dB)

IP3 (typ) (dBm)

@ f = (MHz)

@ f = (MHz)

@ f = (MHz)

@ IC = (mA)

@ f = (MHz)

@ IC = (mA)

@ IC = (mA)

VCEO (max) (V)

f T (typ) (GHz)

IC (max) (mA)

NF (typ) (dB)

Gemeration

Package

BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR

4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4.5 4.5 4.5 4.5

19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21 30 30 31 31

SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5 SOT143R SOT343R SOT143R SOT343R 14 14 14 14

15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10 6 6 6 6

18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100 10 10 35 35

150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270 60 60 210 210

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

Polarity

Curve

Type

13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2

2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 1800 1800 1800 1800

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30 5 5 15 15

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3

1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3 -

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 -

5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 -

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6 -

1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.85 1.85 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.9 1.9 2.7 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2 2 2.1 2.1 1.8 1 1 1.1 1.1

NF (typ) (dB)

2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000

1.25 1.25 1.25 1.25 1.25 5 5 5 5 5 10 10 10 10 10 10 10 5 5 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 1 1 3 3

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3

4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 1.8 1.8 8.7 8.7

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 -

@ IC = (mA)

@ VCE = (V)

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -

10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 8.5 8.5 19.4 19.4

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 5 5 15 15

NPN 18 NPN 18 NPN 18.3 NPN 18.3

1800 5 1800 5 1800 15 1800 15

RF wideband transistors generation 5 - 7
PL(1dB) (typ) (dBmW) P tot (max) (mW) GUM (typ) (dB) IP3 (typ) (dBm) @ f = (MHz) @ f = (MHz) @ f = (MHz) @ f = (MHz) @ VCE = (V) 1 2 2 2 2 2 5 5 5 5 2 2 2 2 2 @ IC = (mA)

@ VCE = (V)

@ VCE = (V)

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

@ VCE = (V)

VCEO (max) (V)

f T (typ) (GHz)

IC (max) (mA)

NF (typ) (dB)

Gemeration

Package

BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFU610F* BFU630F* BFU660F* BFU690F* BFU710F* BFU725F/N1 BFU730F* BFU760F* BFU790F*

5th 5th 5th 5th 5th 5th 5th 6th 6th 6th 6th 7th 7th 7th 7th 7th

32 25 26 27 27 27 29 34 35 36 37 38 33 39 40 41

SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F

17 22 25 25 25 21 40 40 40 40 70 70 70 70 70

4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250 5 10 5 30 5 70 5 100 2.8 10 2.8 40 2.8 30 2.8 70 2.8 100

600 16 54 135 135 135 360 50 130 200 300 30 136 130 200 250

NPN NPN NPN NPN NPN NPN NPN

Polarity

Curve

Type

10 22 21 23 22 20 16

1900 2000 2000 2000 2000 2000 2000 5800 2400 1500 1500 12000 5800 5800 2400 2400

1 3 10 25 25 25 80 8 25 60 90 8 25 25 60 90

3.6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2

1 0.9 0.8 0.8 0.8 1.2 0.75 0.58 0.6 0.7 0.9 0.47 0.56 0.5 0.56

900 900 900 900 900 900 2400 1500 1500 1500 5800 2400 2400 1500 1500

1 1 2 2 2 8 1 5 20 50 2 5 5 20 50

2 2 2 2 2 2 2 2 2 2 2 2 2 2 2

1.6 1.2 1.2 1.2 1.2 1.8

NF (typ) (dB)

2000 2000 2000 2000 2000 2000

1 1 2 2 2 8

2 2 2 2 2 2 2 2 2 2 2 2 2 2 2

5 1 5 2 12 2 12 2 12 2 20 3.6 8 2 -

900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80 - 14 8 - 23 25 - 30 60 - 35 90 - 14.5 8 5800 25 19 25 - 20.5 25 - 23 60 - 24 90

NPN 21 NPN 28 NPN 28.5 NPN 25.6 NPN 16.5 NPN 18 NPN 20.3 NPN 25 NPN 20.4

1.4 5800 1 0.73 2400 5 0.75 2400 20 0.9 2400 50 1.7 12000 2 0.7 5800 5 1 5800 5 0.6 2400 20 0.7 2400 50

* = check status at 3.1 new products, as this type has not been released yet for mass production. Bold = Highly recommended product Bold Red = New, highly recommended product

70

NXP Semiconductors RF Manual 14th edition

@ IC = (mA)

@ VCE = (V)

@ VCE = (V) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3

@ IC = (mA)

@ VCE = (V)

@ VCE = (V)

@ VCE = (V)

3.4
3.4.1

RF ICs
MMICs

NEW : RF MMIC selection guide on www.nxp.com/mmics Easy-to-use parametric filters help you to choose the right zRF MMIC for your design.

Why choose NXP Semiconductors’ MMICs ` Reduced RF component count ` Easy circuit design-in ` Reduced board size ` Short time-to-market ` Broad portfolio ` Volume delivery ` Short leadtimes ` Excellent gain flatness^ ` No output inductor necessary anymore^
^ = only for new satellite IF gain blocks, BGA28xx-family.

General-purpose wideband amplifiers (50 Ohm gain blocks)
@ Type BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 Notes:
(1)

Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363

Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5

Fu(1) Is @-3 dB (mA) (GHz) 12.6 3.6(2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 3.6 14.6(2) 27.5 2.1 2.5 21.0 (2) 4.58 2.7 3.3 4.3(2) 3.2 15.9(2) 8.0 3.2
(2)

NF (dB) 4.8 1.9(2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3(2)

Psat (dBm) 2.8 -2.3 13.2(2) 10.5 12.5 4.8 13.8 9.7 14.0 12.9 -3.4 -4.0 11.6 1.4

@ 1 GHz Gain(3) (dB) 13.1 21.8 21.4 23.2(2) 22.7 21.3 30 (2) 20.1 35.5(2) 32.3 20.4 21.7 22.9 23.9
(3)

P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0

100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6

Gain(3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0

3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1

Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6

Limits Is (mA) 20 15 50 34 35 25 35 50 35 30 10 8 25 15

P tot (mW) 200 200 200 200 200 200 200 200 200 200 200 200 200 200

Upper -3 dB point, to gain at 1 GHz.

Optimized parameter

Gain = |S21|2

New general-purpose wideband amplifiers (50 Ohm gain blocks)
@ Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 Vs (V) 3.3 3.3 3.3 3.3 5.0 5.0 5.0
Fu

Is @-3 dB (mA) (GHz) 9.7 >3 12.4 3.0 16.4 >3 19.6 2.3 7.7 >3 22.7 2.6 15.4 >3

NF (dB) 3.4 3.6 3.4 2.8 3.9 3.7 3.6

@ 1 GHz Gain (dB) 20.2 22.1 25.4 31.2 23.3 31.9 23.4

OIP3 (dBm) 11.5 13.6 18.2 16.1 8.7 20.9 17.7

250 (MHz) 20.0 22.3 26.2 32.0 22.9 31.2 23.0

Gain (dB) @ 950 1550 (MHz) (MHz) 20.2 20.6 22.1 23.0 25.4 25.5 31.2 30.6 23.2 23.9 31.8 32.6 23.3 24.0

2150 (MHz) 20.6 23.8 25.8 28.7 24.0 31.4 24.3

No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage. Bold Red = New, highly recommended product

2-stage variable gain linear amplifier
@ Type BGA2031/1 Notes:
(1)

Package SOT363
(2)

Vs (V) 3

Is (mA) 51

Frequency Range 800-2500

Gain(1) (dB) 24

@ 900 MHz DG(2) P1dB ACPR Gain(1) (dB) (dBm) (dBc) (dB) 62 11 49 23

@1900 MHz DG(2) P1dB ACPR (dB) (dBm) (dBc) 56 13 49

Vs (V) 3.3

Limits Is (mA) 77

P tot (mW) 200

Gain = GP, power gain.

DG = Gain control range

NXP Semiconductors RF Manual 14th edition

71

Wideband linear mixer
@ Type BGA2022 Notes:
(1)

Package SOT363 Gain = GP, power gain.
(2)

Vs (V) 3

Is (mA) 6

RF Input Frequency Range 800 - 2500

IF Output Frequency Range 50 - 500

NF (dB) 9

@ 880 MHz Gain(1) OIP3 (dB) (dBm) 5 4

@1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10

Vs (V) 4

Limits Is (mA) 10

Ptot (mW) 40

DG = Gain control range

Low-noise wideband amplifiers
@ Type BGA2001 BGA2002^ BGA2003 BGA2011 BGA2012 Package SOT343R SOT343R SOT343R SOT363 SOT363 Vs (V) 2.5 2.5 2.5 3 3
(3)

Is (mA) 4 4 10 (2) 15 7 |S21|2

NF (dB) 1.3 1.3 1.8 1.5 -

@ 900 MHz Gain IIP3 (dB) (dBm) -7.4 22(1) -7.4 22(1) 24 (1) -6.5 10 19(3) -

@1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5(1) -4.5 1.3 19.5(1) -4.5 1.8 16(1) -4.8 1.7 16(3) 10

100 MHz 20 20 26 24 22

Gain(3) (dB) @ 1 2.6 GHz GHz 17.1 11.6 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6

3.0 GHz 10.7 10.7 10.1 6.5 10.5

Vs (V) 4.5 4.5 4.5 4.5 4.5

Limits Is (mA) 30 30 30 30 15

Ptot (mW) 135 135 135 135 70

Notes: (1) MSG (2) Adjustable bias ^ = Automotive qualified

General-purpose, med. power ampl. (50 ohm gain blocks)
@ Type BGA6289 BGA6489 BGA6589 Notes:
(1)

Package SOT89 SOT89 SOT89

Vs (1) (V) 4.1 5.1 4.8

Is (mA) 84 78 81

NF (dB) 3.5 3.1 3.0
(2)

@ 900 MHz Gain(2) OIP3 (dB) 15 20 22 (dBm) 31 33 33

P1dB (dBm) 17 20 21

NF (dB) 3.7 3.3 3.3

@1800 MHz Gain(2) OIP3 (dB) 13 16 17 (dBm) 28 30 32

P1 dB (dBm) 15 17 20

Gain(2) 2.5 GHz 12 15 15

Vs (1) (V) 6 6 6

Limits Is (mA) 120 120 120

Ptot (mW) 480 480 480

Device voltage without bias resistor.

Gain = |S21|2 supply shutdown control VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) Gp dB 22 22 20 19 18 18 RF performance Typ @ f = 940 MHz PL(1dB) OIP3 dBm dBm 25 38 24 38 28 44 28 41 30 45 33 46 NF dB 5 3 3 3 4 4 Gp dB 16 16 13 12 12 12 RF performance Typ @ f = 1960 MHz PL(1dB) OIP3 dBm dBm 24 38 25 38 28 43 28 43 30 45 33 47 NF dB 5 4 5 4 4 4

Medium power amplifier MMICs for all 400 - 2700 MHz applications
Type Package f Vcc Icc

Typ Typ Max Min Max Min Max Typ (MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 BGA7024 SOT89 leaded 400 - 2700 5 110 BGA7127 SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 BGA7027 SOT89 leaded 400 - 2700 5 170 BGA7130* SOT908 leadless 400 - 2700 5 0 0.7 2.5 Vbias 4 BGA7133* SOT908 leadless 400 - 2700 5 0 0.7 2.5 Vbias 4 The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.

SiGe:C MMICs (for e.g. GPS):
Supply voltage Vcc V Min Max Min

@ 1.575 GHz
Supply current Icc mA Typ Max Min Insertion power gain |s21|2 dB Typ Max Noise figure NF dB Typ Vcc = 1.8 V, Min Vcc = 1.8 V, Typ Input power at 1 dB gain compression PI(1 dB) dBm Vcc = 2.5 V, Icc = 5 mA Vcc = Vcc = 2.85 V, 2.85 V, Typ Min Vcc = 1.8 V, Min Vcc = 1.8 V, Typ Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz IP3i dBm Vcc = 2.5 V, Icc = 5 mA Vcc = 2.85 V, Min Vcc = 2.85 V, Typ

Type

Package

BGU7003 BGU7005 BGU7006* BGU7007*

SOT891 SOT886 WLCSP*** SOT886

2.2 1.5 1.5 1.5

2.85 2.85 2.85 2.85

3 -

4.5 3.8 4.8

15 -

16 -

18,3 16.5** 16.5** 18****

20 -

0,8 0,9 0,9 0,9

-14 -14 -14

-11 -11 -11

-20 -

-11 -12 -11

-8 -9 -8

5 1 5

9 4 9

0 -

5 5 5

12 9 12

SiGe:C MMICs for Set-Top-Boxes
Type Package Frequency range (MHz) BGU7033* BGU7032* BGU7031* SOT363 SOT363 SOT363 40 - 1000 40 - 1000 40 - 1000 GP 10 dB GP 5 dB Bypass GP 10 dB Bypass GP 10 dB @ Mode VCC (V) 5 5 5 5 5 5 ICC (mA) 43 43 4 43 4 43 Gain (1) (dB) 10 5 -2 10 -2 10 NF (dB) 4.5 6 2.5 4.5 2.5 4.5 PL(1dB) (dBm) 14 9 10 13 10 13 OIP3 (dBm) 29 29 29 29 29 29 FL (2) (dB) -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 RLout (dB) 12 12 8 12 8 12 RLin (dB) 18 17 8 18 8 18

* = check status at 3.1 new products, as this type has not been released yet for mass production. Bold Red = New, highly recommended product Notes: (1) Gain = GP, power gain, (2) Flatness of frequency response = FL

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SiGe:C MMICs Variable Gain Amplifiers
Type Package Control interface Vsup (V) BGA7202* BGA7203* BGA7204* BGA7350* BGA7351* SOT617 SOT617 SOT617 SOT617 SOT617 Analog Analog Parallel, serial Parallel, digital Parallel, digital 5 5 5 5 5 Isup (mA) 710 710 160 240 240 frequency (MHz) 700 … 1450 1450 … 2200 2100 … 2750 700 … 2750 50 … 250 Gain @ minimum attenuation @ maximum attenuation range Gain OIP3 NF Gain OIP3 NF (dB) (dB) (dBm) (dB) (dB) (dBm) (dB) 27 24 45 6.5 -3 23.5 33.5 27 24 45 6.5 -3 23.5 33.5 27 24 45 6.5 -3 23.5 33.5 31.5 24 37 6.5 -7.5 19 38 24 18.5 6 -5.5 50 30 28 18.5 6 -9.5 50 34

BGA7350 and BGA7351 are dual VGA products. The VGA function is twice on the chip. BGA7350 and BGA7351 are designed for receiving.

SiGe:C MMIC LNA's for wireless infrastructures
Type BGU7051* BGU7052* BGU7053* BGU7054* Package SOT650 SOT650 SOT650 SOT650 Vsupply (typ) (V) 3.3 3.3 3.3 3.3 @ IC = (mA) 65 65 65 65 @f= (MHz) 900 1900 2500 3500 Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ) (dB) 20.9 20.1 20 20 (dB) 0.7 0.9 1 1.1 (dBmW) 17.8 18 18 18 (dBm) 34 35.5 35 35 IRL (dB) 22 20 20 20 ORL (dB) 15.8 15 15 15

* = check status at 3.1 new products, as this type has not been released yet for mass production. Bold Red = New, highly recommended product

3.4.2

Low noise LO generators for VSAT and general microwave applications

Why choose NXP Semiconductors’ low noise LO generators ` Lowest total cost of ownership ` Alignment free concept ` Easy circuit design-in ` Improved LO stability Low noise LO generators for VSAT applications
fIN(REF) Type Package Typ MHz
TFF1003HN TFF1007HN*

VCC

ICC Typ mA
100 100

PLL phase noise @ N=64, @100 kHz Max dBc/Hz
-92 -104

PLL fo(RF) (GHz)
12.8~13.05 14.75~15

Output buffer Po Typ dBm
-5 -3

Input Si Min dBm
-10 -10

RLout(RF) Max dB
-10 -10

V
3.3 3.3

SOT616 SOT616

50~815 230.46~234.38

Low noise LO generators for general microwave applications
Type TFF11070HN* TFF11073HN* TFF11077HN* TFF11080HN* TFF11084HN* TFF11088HN* TFF11092HN* TFF11096HN* TFF11101HN* TFF11105HN* TFF11110HN* TFF11115HN* TFF11121HN* TFF11126HN* TFF11139HN* TFF11145HN* TFF11152HN* Package SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 fIN(REF) MHz 27 - 448 28 - 468 29 - 490 31 - 513 32 - 537 34 - 562 35 - 588 37 - 616 38 - 644 40 - 674 42 - 706 44 - 738 46 - 773 48 - 809 53 - 886 55 - 927 58 - 970 VCC Typ V 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 ICC Typ mA 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 PLL phase noise @ N=64 @ 100 kHz @ 10 MHz dBc/Hz dBc/Hz -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 PLL fo(RF) Typ GHz 7.00 7.33 7.67 8.02 8.40 8.79 9.20 9.63 10.07 10.54 11.03 11.55 12.09 12.65 13.85 14.50 15.18 Output buffer Po RLout(RF) Typ Max dBm dB -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 Input Si Min dBm -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10

Min GHz 6.84 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.85 10.31 10.79 11.29 11.81 12.36 13.54 14.17 14.83

Max GHz 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.94 14.17 14.83 15.52

* = check status at 3.1 new products, as this type has not been released yet for mass production. Bold Red = New, highly recommended product

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73

3.5
3.5.1

RF MOS transistors
JFETs

NEW : JFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right junction field effect transistor for your design.

Why choose NXP Semiconductors’ JFETs ` Reliable volume supplier ` Short leadtimes ` Broad portfolio

N-channel junction field-effect transistors for switching
VDS Type BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393 Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23 (V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40 IG (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30 -Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 max 15 15 15 typ 6 6 6 35 35 35 6 6 6 35 35 35 t off (ns) max 25 50 100 20 35 50

P-channel junction field-effect transistors for switching
VDS Type PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 Package SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 (V) max 30 30 30 30 30 30 30 30 IG (mA) max 50 50 50 50 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20 -Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 7 15 35 45 max typ 15 30 35 45 15 30 35 45 t off (ns) max -

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N-channel junction field-effect transistors for general RF applications
VDS Type Package (V) max IG (mA) max I DSS (mA) min max CHARACTERISTICS Vgsoff |Yfs| (V) (mS) min max min max 3 3 3 3 3 3 4.5 4.5 4.5 12 16 20 35 2.5 4 6 7 1 1.5 >1 >10 >10 >10 10 4 4.5 6.5 6.5 6.5 6.5 6.5 6.5 20 25 30 C rs (pF) min Typ.=1.1 Typ.=1.1 Typ.=1.1 0.8 0.8 0.8 0.8 0.8 0.8 2.1 2.1 2.1 typ=1.9 0.4 0.4 0.4 0.4 1.5 1.5 1.5 1.3 1.3 1.3 1.3 max 2.7 2.7 2.7 0.5 0.5 0.5 0.5 2.5 2.5 2.5 2.5

DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 <8 BF245B SOT54 30 10 6 15 <8 BF245C SOT54 30 10 12 25 <8 BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages SOT23 20 10 0.7 3 typ. 0.8 BF510 (1) SOT23 20 10 2.5 7 typ. 1.5 BF511(1) SOT23 20 10 6 12 typ. 2.2 BF512(1) SOT23 20 10 10 18 typ. 3 BF513 (1) Low-level general purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 <2.5 General-purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 <1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5
(1)

Bold = Highly recommended product Asymmetrical

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75

3.5.2

MOSFETs

NEW : RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right RF MOSFET for your design.

Why choose NXP Semiconductors’ MOSFETs ` Reference designs for TV tuning ` Short leadtimes ` Broad portfolio ` Smallest packages ` 2-in-1 FETs for tuner applications ` Reliable volume supply ` Best performance MOSFETs for TV tuning N-channel, single MOSFETs for switching
VDS Type Package (V) max 10 3 3 3 3 3 3 3 3 3 ID (mA) max 50 10 10 10 10 10 10 10 10 10 I DSS (mA) min max 100 (3) 100 (3) 100 (3) 100 100 100 100 100 100 V(p)GS (V) min max 2(1) 0.1(2) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) RDSON (Ω) max 45 20 20 20 20 20 22 22 22 22 CHARACTERISTICS C rs t on (pF) (ns) min max typ max typ.0.6 1 t off (ns) typ max 5 |S21(on)|2 (dB) max 2.5 3 3 3 3 3 3 3 3 |S21(off)|2 (dB) min 30 30 30 30 30 30 30 30 30 MODE

BSS83 SOT143 Silicon RF Switches BF1107 SOT23 SOT143B BF11085) SOT143R BF1108R5) BF1108W SOT343 BF1108WR SOT343R BF1118 SOT143B BF1118R SOT143R BF1118W SOT343 BF1118WR SOT343R

enh. depl. depl. depl. depl depl depl depl depl depl

Bold = Highly recommended product Bold Red = New, highly recommended product

N-channel, dual-gate MOSFETs
VDS Type Package (V) max 12 12 12 20 20 20 20 12 12 12 7 7 7 11 11 11 7 7 7 7 7 7 ID (mA) max 40 40 40 20 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 I DSX (mA) min max 3 3 3 4 4 4 2 2 2 8 8 8 8 8 8 8 8 8 12 12 12 27 27 27 25 20 20 18 18 18 16 16 16 16 16 16 13 13 13 20 20 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 -2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1(6) 1(6) 1(6) CHARACTERISTICS |Yfs| C is C os (mS) (pF) (pF) min max typ typ 36 36 36 10 20 15 15 21 21 22 25 25 25 24 24 24 22 22 22 36 36 36 50 50 50 30 30 30 50 50 50 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2 2.2 2.2 3.6 3.6 3.6 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.2(8) 1.2(8) 1.2(8) 1.3 (8) 1.3 (8) 1.3 (8) 1.3 1.3 1.3 2.3 2.3 2.3
(1)

F @ 800 MHz (dB) typ 1.5 1.5 1.5 1 1.2(7) 1(7) 1.8 1 1 1 1.7 1.7 1.7 1.5 1.5 1.5 2 2 2 2 2 2

VHF

UHF

(6) (2) (7) (3)

With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904A SOT143 BF904AR SOT143R BF904AWR SOT343R BF909A SOT143 BF909AR SOT143R BF909AWR SOT343R

X X X X X X X X X X X X X X X X X X X X X

X X X X X X X X X X X X X X X X X X X

(8) (4) (9) (5)

Asymmetrical VGS (th) VGS(th) @ 200 MHz ID C OSS VSG C ig Depletion FET plus diode in one package

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N-channel, dual-gate MOSFETs
VDS Type Package (V) max 14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 ID (mA) max 30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 I DSX (mA) min 8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 14 10 max 13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 24 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2 1.2(6) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 CHARACTERISTICS |Yfs| C is (mS) (pF) min max typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 26 25 33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 41 40 2.2 2.2 2.2 2.2 2.2 2.2 2.8 (9) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 2.1 2.1 C os (pF) typ 1.4 1.4 1.4 1.2(8) 1.2(8) 1.2(8) 1.6(8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.8 0.85 F @ 800 MHz (dB) typ 2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 1.1 1.4 VHF UHF

Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R SOT363 BF1102(R)(10) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R SOT363 BF1203 (11) SOT363 BF1204(10) BF1205C (11)(12)(13) SOT363 BF1205(11)(12)(13) BF1206(11) BF1206F(11) BF1207(11)(13)(14) BF1208 (11)(12)(13) SOT363 SOT363 SOT666 SOT363 SOT666

BF1208D(11)(12)(13) SOT666 BF1210 (11)(12) BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214(10) BF1218 (11/12/13) SOT363 SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363 SOT363

X X X X X X X X X X X X X X X X X X X X X X X X X X X X -

X X X X X X X X X X X X X X X X X X X X X X X X X X X X

Bold = Highly recommended product Bold Red = New, highly recommended product
(1) (2) (3) (4) (5) (7) (8)

Asymmetrcal VGS(th) ID VSG Depletion FET plus diode in one package @200 MHz C OSS

(9) (10) (11) (12) (13) (14)

C ig Two equal dual gate MOSFETs in one package Two low noise gain amplifiers in one package Transistor A: fully internal bias, transistor B: partly internal bias Internal switching function Transistor A: partly internal bias, transistor B: fully internal bias

N-channel, dual gate MOSFETs for Set-Top-Boxes
CHARACTERISTICS Type Package VDS (V) max 6 6 6 6 6 ID (mA) max 30 30 30 30 30 IDSX (mA) max 19.5 23 19.5 23 23 (V) min 0.3 0.3 0.3 0.3 0.3 V(th)gs max 1 1 1 1 1 |Yfs| (mS) typ 27 27 27 27 27 Cis (pF) typ 2.5 2.5 2.5 2.5 2.5 COS (pF) typ 0.8 0.8 0.8 0.8 0.8 F @ 800 MHz (dB) typ 1.9 1.9 1.9 1.9 1.9 X-Mod @ 40 dB gain reduction (dB) typ 107 107 107 107 107

BF1215 (1)(2)(3) BF1216(1) BF1217
(1)

SOT363 SOT363 SOT343

Two low noise gain amplifiers in one package (2) Transistor A: fully internal bias, transistor B: partly internal bias (3) Internal switching function Bold Red = New, highly recommended product

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77

3.6

RF Modules

NEW : CATV module selection guide on www.nxp.com/catv Easy-to-use parametric filters help you to choose the right CATV module for your design.

Why choose NXP Semiconductors’ RF Modules ` Excellent linearity, stability and reliability ` Rugged construction ` Extremely low noise ` High power gain ` Low total cost of ownership CATV types for Chinese (C-types) and 1GHz GaAs HFET line ups New in our CATV Hybrid portfolio are two families of products. The C types are specially designed for the Chinese market, customized for two major governmental projects. And the GaAs HFET 1 GHZ complete line up for high end applications all around the world.

Both families will be extended in the following months to cover all of the twospecific market segments. C types (China) ` CATV push pulls, chapter 3.6.2: BGY588C, BGE788C, CGY888C ` CATV power doublers, chapter 3.6.3: BGD712C ` CATV optical receivers, chapter 3.6.4: BGO807C 1GHz GaAs HFET very high end Hybrids ` CATV push pulls, chapter 3.6.2 : CGY1047, CGY1041, CGY1043 ` CATV power doublers, chapter 3.6.3: CGD1040Hi, CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H, CGD1044H

3.6.1

CATV Reverse Hybrids
Type number BGY68 BGY66B BGY67 BGY67A BGR269 Gain (dB) 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5 Slope (dB) -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 0 - 0.6 FL ± 0.2 ± 0.2 ± 0.2 ± 0.2 ± 0.4 RL IN /RL OUT 20/20 20/20 20/20 20/20 20/20 CTB -68 -66 -67 -67 -57 XMOD -60 -54 -60 -59 -50 CSO -70 @ Ch 4 14 22 22 28 @ Vo (dBmV) 50 48 50 50 50 NF @ fMAX 3.5 5 5.5 5.5 5.2 I tot (mA) 135 135 230 230 160

Frequency range 5 -75 MHz 5 -120 MHz 5 -200 MHz 5-200 MHz

3.6.2

CATV Push-Pulls
Type number OM7650 BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 OM7670 BGY785A BGE788C BGY787 BGE787B BGE788 BGY883 BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888 BGY1085A Gain (dB) 33.2 - 35.5 33.2 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 33.5 - 35.5 17.7 - 18.7 21 - 22 33.2 - 35.2 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 33.5 - 34.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 18 - 19 Slope (dB) 0.2 - 2 0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 1/4 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0.5 - 2.5 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0-2 FL ± 0.5 ± 0.2 ± 0.2 ± 0.4 ± 0.4 ± 0.2 ± 0.2 ± 0.3 ± 0.6 ± 0.5 ± 0.5 ± 0.5 ± 0.3 ± 0.5 ± 0.3 ± 0.3 ± 0.3 ± 0.5 ± 0.6 ± 0.5 ± 0.5 ± 0.3 RL IN /RL OUT 10/10 16/16 20/20 20/20 20/20 20/20 20/20 20/20 10/8 20/20 16/16 20/20 20/20 20/20 20/20 14/14 20/20 20/20 20/20 20/20 21/21 20/20 20/20 20/20 CTB -45 -57 -59 -57 -57 -57 -55 -54 -43 -53 -49 -53 -50 -49 -61 -61 -55 -68 -60 -60 -60 -53 XMOD -62 -58 -60 -59 -60 -54 -56 -52 -54 -51 -61 -61 -61 -59 -60 -59 -54 CSO -57 -62 -59 -54 -57 -62 -56 -52 -54 -53 -52 -53 -56 -52 -61 -61 -57 -66 -55 -60 -55 -56 @ Ch 77 77 77 77 77 77 85 85 110 110 110 110 110 110 49 129 129 49 129 112 49 49 49 150 @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 59 59 44 40 44 44 44 44 44 NF @ fMAX 8 8 8 7 6.5 6 8.5 6.5 8 7 8 6.5 7 7 8.5 8 8 8 6.5 4.0 7.0 6.5 7 7.5 I tot (mA) 340 345 240 240 340 340 240 240 340 240 325 240 320 320 235 240 240 240 235 280 340 340 340 240

Frequency range

40 - 550 MHz

40 - 600 MHz

40 - 750 MHz

40 - 870 MHz

40 -1003 MHz 78

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CATV Push-Pulls 1 GHz
Freq range 40-1003 MHz 40-1003 MHz 40-1003 MHz 40-1003 MHz 40-1003 MHz Type CGY1041* CGY1043* CGY1047 CGY1049* CGY1032* Gain 22 24 28 30 33 Slope 1.0 - 2.0 dB 1.0 - 2.0 dB 1.0 - 2.0 dB 1.5 - 2.5 dB 1.0 - 2.0 dB fl ±0.8 ±0.8 ±0.5 ±0.8 ±0.8 RL IN /RL OUT 20/18 dB 20/18 dB 20/18 dB 20/18 dB 20/18 dB CTB -62 dBc -62 dBc -62 dBc -62 dBc -62 dBc Xmod -58 dBc -58 dBc -58 dBc -58 dBc -58 dBc CSO -64 dBc -64 dBc -64 dBc -64 dBc -64 dBc @ Ch 79NTSC+75digital 79NTSC+75digital 79NTSC+75digital 79NTSC+75digital 79NTSC+75digital @ Vout 44 dBmV flat 44 dBmV flat 44 dBmV flat 44 dBmV flat 44 dBmV flat NF 5.5 dB 5.5 dB 4.5 dB 4.5 dB 4.5 dB Itot 250 mA 250 mA 250 mA 250 mA 250 mA

3.6.3

CATV power doublers
Type number Gain (dB) 18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 19.5 - 20.5 19.7 - 20.3 21.2 - 21.8 20.5 - 22.5 23 - 25 21 23 25 25 23 25 Slope (dB) 0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.2 - 2 0.4 - 1.4 0.5 - 1.5 1-2 1-2 1.5 1.5 1.5 0 - 2.0 0 - 1.5 0-1 FL ± 0.3 ± 0.5 ± 0.25 ± 0.35 ± 0.4 ± 0.5 ± 0.35 ± 0.5 ± 0.5 ± 0.5 ± 0.5 ± 0.5 ± 0.5 ± 0.3 ± 0.3 0.5 0.5 0.5 1 ± 0.3 ± 0.3 RL IN /RL OUT 20/20 20/20 20/20 23/23 17/17 20/20 23/23 20/20 20/20 23/23 20/20 22/25 22/25 18/18 18/18 -20/-20 -20/-20 -20/-20 20/20 17.5/20 17.5/20 CTB -65 -58 -58 -62 -62 -57 -61 -54 -58 -53 -57.5 -55 -66 -66 -65 -65 -65 -73 -70 -70 XMOD -68 -62 -62 -63 -61 -62 -59 -62 -61 -62 -58 -58 -58 -68 -68 -68 -74 -67 -67 CSO -62 -58 -58 -63 -63 -56 -62 -56 -60 -54 -59 -56 -68 -68 -68 -68 -68 -68 -68 -68 @ Ch 77 110 110 112 112 110 112 129 129 132 129 132 129 132 132 79 channels 79 channels 79 channels 79NTSC+75^ 79 + 75^ 79 + 75^ @ Vo (dBmV) 44 44 44 44 44 44 44 59 44 44 44 44 44 48 48 50 50 50 44 59 59 NF @ fMAX 8 8.5 8.5 7 7 8.5 7 8 9 7.5 7.5 7.5 7.5 3.5 3.5 <6 <6 <6 5.0 5.0 5.0 Itot (mA) 435 435 435 410 410 435 410 450 410 410 410 410 375 450 450 470 470 470 460 450 450

Frequency range 40 - 550 MHz

BGD502 BGD702 BGD702N BGD712 40 -750 MHz BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD804 40 - 870 MHz BGD814 BGD816L CGD942C CGD944C CGD1040Hi CGD1042Hi CGD1044Hi 40 - 1003 MHz CGD1046Hi* CGD1042H CGD1044H
^

= digital channels

3.6.4

CATV optical receivers
S (V/W) 800 750 750 800 800 750 750 800 750 750 Slope (dB) 0-2 0-2 0-2 0-2 0-2 0-2 0-2 0-2 0-2 0-2 FL SL RLout (dB) 11 11 11 11 11 11 11 11 11 11 IMD3 IMD2 @fm (MHz) 854.5 854.5 854.5 854.4 854.4 854.5 854.5 854.5 854.5 854.5 @Pi (mW) 1 1 1 1 1 1 1 1 1 1 NF @ fMAX Conn. Itot (mA) 205 205 205 205 205 205 205 205 205 205

Frequency Type number range Forward Path Receiver BGO807 BGO807/FC0 BGO807/SC0 BGO807C BGO807CE 40 - 870 MHz BGO807C/FC0 BGO807C/SC0 BGO827 BGO827/FC0 BGO827/SC0

1 1 1 1 1 1 1 1 1 1

-71 -71 -71 -71 -71 -71 -71 -73 -73 -73

-55 -55 -55 -54 -53 -55 -55 -57 -57 -57

8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5

FC SC

FC SC FC SC

* = check status at 3.1 new products, as this type has not been released yet for mass production. Bold Red = New, highly recommended product Bold = Highly recommended product NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office.

Description Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels and the output voltage at which CTB, XMOD, CSO, IMD2 and IMD3 are characterized @fm. Measurement frequency is fm. Noise Figure is in dB or Noise in pA/Sqrt(Hz). FL SL is Flatness straight line. S is Minimum responsivity of optical receivers.
NXP Semiconductors RF Manual 14th edition 79

3.7

RF power transistors

NEW : RF power transistor selection guide on www.nxp.com/rfpower Easy-to-use parametric filters help you to choose the right RF power transistor for your design.

3.7.1

Base Station transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview Device naming conventions RF power base stations transistors

-45 P R B N G gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device P1dB power option: earless package option: low thermal resistivity operating frequency (in 100MHz; maximum) G: standard LDMOS LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si

B L F 6 G

22 L S

Why choose NXP Semiconductors‘ RF power transistors for base stations: `B Leading technology (generation 6 and 7 of LDMOS) L F 6 G 22 L S -45 P R B N G gullwing-shaped leads ` Highest (system) efficiency specialty option: current sense lead ` Best ruggedness enhanced ruggedness push-pull device ` Advanced Doherty power amplifier designs P1dB option: earless package ` Industry’s first 3.8 thermal resistivity option: low GHz Doherty operating frequency (in 100MHz; maximum) ` Industry’s first fully integrated Doherty amplifier G: standard LDMOS NXP offers complete line-ups of RF power transistors operation from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si

3.7.1.1
Function driver driver driver driver driver final final final final final

0.7 - 1.0 GHz line-up
Type BLF6G21-10G BLM6G10-30 BLM6G10-30G BLF6G10(S)-45 BLF6G10L(S)-40BRN BLF6G10(LS)-135RN BLF6G10(LS)-160RN BLF6G10(LS)-200RN BLF6G10L(S)-260PRN BLF6G07L(S)-260PBM Package SOT538A SOT834-1 SOT822-1 SOT608 SOT1112A3/B3 SOT502 SOT502 SOT502 SOT539A3/B3 SOT1110A3/B3 frange MHz 10 - 2200 700 - 1000 700 - 1000 700 - 1000 728 - 960 700 - 1000 700 - 1000 688 - 1000 728 - 960 728 - 810 PL(AV) W 0.7 2 2 1 2.5 26.5 32 40 40 60

ηD
% 15 11.5 11.5 7.8 15 28 27 28.5 27 31

Gp dB 18.5 29 29 22.5 15 21 22.5 20 27 21

@VDS V 28 28 28 28 23 28 32 28 22 28

80

NXP Semiconductors RF Manual 14th edition

3.7.1.2
Function driver final

1.4 - 1.7 GHz line-up
Type BLF6G15L(S)-40BRN BLF6G15L(S)-250PBRN Package SOT1112A3/B3 SOT1110A3/B3 frange MHz 1475-1511 1475-1511 PL(AV) W 2,5 60

ηD
% 13 32.5

Gp dB 22 18

@VDS V 28 28

3.7.1.3
Function driver driver driver final final final final final final final final final final final

1.8 - 2.0 GHz line-up
Type BLF6G21-10G BLF6G20-40 BLF6G20(S)-45 BLF6G20LS-75 BLF6G20(LS)-110 BLF6G20LS-140 BLF6G20-180PN BLF6G20(LS)-180RN BLF6G20-230PRN BLF7G20L(S)-140P BLF7G20L(S)-90P BLF7G20L(S)-300P BLF7G20L(S)-200 BLF7G20L(S)-250P Package SOT538A SOT608A SOT608B SOT502 SOT502 SOT502B SOT539A SOT502B SOT539A SOT1121B3 SOT1121A3/B3 SOT539A3/B3 SOT502A3/B3 SOT539A3/B3 frange MHz 10 - 2200 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1805 - 1880 1805 - 1880 1805 - 1880 1805 - 1880 1805 - 1880 PL(AV) W 0.7 2.5 2.5 29.5 63 25 35.5 50 40 65 20 84 85 50 70

ηD
% 15 15 14 37.5 52 32 30 29.5 27 32 31 56 30 30 30

Gp dB 18.5 18.8 19.2 19 19 19 16.5 18 17.2 17.5 17.5 19 17 17 17

@VDS V 28 28 28 28 28 28 28 32 30 28 28 28 28 28 28

3.7.1.4
Function

2.0 - 2.2 GHz line-up
Type BLF6G21-10G BLM6G22-30 BLM6G22-30G BLF6G22(S)-45 BLF6G22L(S)-40BN BLF6G22LS-75 BLF6G22LS-100 BLF6G22L(S)-130 BLF7G22LS-130 BLF6G22-180PN BLF6G22(LS)-180RN BLF7G22L(S)-250PB BLD6G21L(S)-50 BLD6G22L(S)-50 Package SOT538A SOT834-1 SOT882-1 SOT608 SOT1112A3/B3 SOT502B SOT502B SOT502 SOT502B SOT539A SOT502 SOT1110A3/B3 SOT1130 SOT1130 frange MHz 10 - 2200 2100 - 2200 2100 - 2200 2000 - 2200 2110 - 2170 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2110 - 2171 2010 - 2025 2110 - 2170 PL(AV) W 0.7 2 2 2.5 2.5 17 25 30 30 50 40 70 8 8

ηD
% 15 9 9 13 16 30.5 29 28.5 32 27.5 25 >17 42 38

Gp dB 18.5 29.5 29.5 18.5 19 18.7 18.5 17 18.5 17.5 16 30 13.5 13.3

@VDS V 28 28 28 28 28 28 28 28 28 32 30 28 28 28

driver driver driver driver driver final final final final final final final integrated Doherty integrated Doherty

3.7.1.5
Function driver driver driver driver driver final final final final final

2.3- 2.7 GHz line-up
Type BLF6G27-10(G) BLF6G27(S)-45 BLF6G27(LS)-75 BLF7G27L(S)-75P BLF7G27L(S)-50BN BLF6G27(LS)-135 BLF7G27L(S)-100 BLF7G24L(S)-100(G) BLF7G27L(S)-140 BLF7G27L(S)-200P Package SOT975 SOT608 SOT502 SOT1121A3/B3 SOT1112A3/B3 SOT502 SOT502A3/B3 SOT 502 A SOT502A3/B3 SOT539 frange MHz 2500 - 2700 2500 - 2700 2500 - 2700 2300 - 2400 2500 - 2700 2500 - 2700 2500 - 2700 2300 - 2400 2500 - 2700 2500 - 2700 PL(AV) W 2 7 9 10 3 20 14 14 20 20

ηD
% 20 24 23 26 15 22.5 24 24 22 25

Gp dB 19 18 17 17 17 16 17.5 18 17 16.5

@VDS V 28 28 28 28 28 32 28 28 28 28

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81

3.7.1.6
Function driver driver driver final

3.5 - 3.8 GHZ line-up
Type BLF6G38-10(G) BLF6G38(S)-25 BLF6G38(LS)-50 BLF6G38(LS)-100 Package SOT975 SOT608 SOT502 SOT502 frange MHz 3400 – 3600 3400 – 3800 3400 – 3800 3400 – 3600 PL(AV) W 2 4.5 9 18.5

ηD
% 20 24 23 21.5

Gp dB 14 15 14 13

@VDS V 28 28 28 28

3.7.1.7

Power LDMOS Doherty designs
PPEAK (dBm) POUT-AVG (dBm) 47.5 47 49.5 50 44 44.5 45 45 48 50 50 50 tbd tbd 49.6 44 44.5 47 47 47 49.5 50 50 45 46.4 48 49 49.5 50 50 39 42 42 44.5 39 46.5 47 47 46.4 48 48.5 49 50 51 51 47 42 44.5 45 42 42 44 44 44 44.5 45 47 tbd 41.5 43 44.5 VDS (V) 28 28 32 32 28 28 28 25 28 32 32 32 28 28 28 27 28 32 28 28 30 32 28 28 28 31 31 28 32 28 28 28 28 28 28 28 28 28 28 28 28 32 32 tbd tbd 28 28 28 28 28 28 28 28 28 28 28 28 tbd 28 28 28 Gain (dB) 20 19 19 19 20 15 tbd tbd 18.5 20.5 21 22 tbd tbd 16 14.5 16 16 15 16 16 15.5 16 16.5 16 15.3 17 tbd 15.5 16 14.4 17 17.2 16 13 16.5 17 15.5 15 15 16.2 14.5 15 tbd tbd 17 14.5 tbd tbd 15 15 14 14 14 14 tbd tbd tbd tbd 11.5 tbd Drain Eff. (%) 50 42 42 47 48 50 tbd tbd 40 46 39 44 tbd tbd 42 42 44 38 40 41 42 37 42 40 39 38 41 tbd 37 40 41 46 47.2 44 38 43 43 38 43 48 41 41 40 tbd tbd 43 43 tbd tbd 43 37.5 40 40 40 38 tbd tbd tbd tbd 32 tbd Type SYM SYM SYM SYM SYM 3-WAY SYM SYM SYM SYM SYM / MMPP SYM / MMPP ASYM ASYM ASYM SYM SYM SYM SYM SYM SYM SYM / MMPP SYM / MPPM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM ASYM 3-WAY SYM ASYM SYM SYM 3-WAY SYM SYM ASYM SYM SYM SYM ASYM ASYM ASYM SYM SYM ASYM ASYM SYM SYM SYM Main transistor 1/2 BLF7G10-300P 1/2 BLF6G10-260PRN BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 BLF6G10S-45 1/2 BLF7G10LS-160P 1/2 BLF7G10LS-160P BLF6G10-135RN BLF6G10-200RN 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN BLF6G10-200RN BLF6G15-250PB BLF7G15LS-200 1/2 BLC6G20-130PG 1/2 BLF7G20LS-160P 1/2 BLF6G20-230PRN BLF6G18-140 1/2 BLF7G20-250P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF6G20-75 1/2 BLF7G20LS-250P BLF6G20-140 2x BLF6G20-75 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLD6G21-50 1/2 BLF7G20-90P 1/2 BLF7G20-90P 1/2 BLF7G20LS-160P BLD6G22-50 BLF6G22-100 BLF7G22-130 BLF6G22-130 BLF7G22LS-130 BLF7G22-130 BLF7G22-200 BLF6G22-100 BLF6G22-180PN BLF7G22LS-250P BLF7G22LS-160 1/2 BLF7G22LS-250P 1/2 BLF7G27-75P BLF7G27S-50 1/2 BLF7G27LS-150P 1/2 BLF7G27-75P BLF6G27-45 BLF6G27-45 BLF6G27-45 BLF6G27-45 1/2 BLF6G27-150P 1/2 BLF7G27LS-150P BLF7G27LS-100 BLF7G27L-140B 1/2 BLF7G38LS-75P BLF6G38-50 BLF7G38-75 Peak transistor 1/2 BLF7G10-300P 1/2 BLF6G10-260PRN BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 2x BLF6G10S-45 1/2 BLF7G10LS-160P 1/2 BLF7G10LS-160P BLF6G10-135RN BLF6G10-200RN 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN BLF7G10-300P BLF6G15-250PB BLF7G15LS-300P 1/2 BLC6G20-130PG 1/2 BLF7G20LS-160P 1/2 BLF6G20-230PRN BLF6G18-140 1/2 BLF7G20-250P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF6G20-75 1/2 BLF7G20LS-250P BLF6G20-140 2x BLF6G20-75 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF6G21-50 1/2 BLF7G20-90P 1/2 BLF7G20-90P 1/2 BLF7G20LS-160P BLF6G22-50 BLF6G22-100 BLF7G22-130 BLF6G22-130 BLF7G22LS-200 7G22-130/7G22-130 BLF7G22-200 BLF6G22-180PN BLF6G22-180PN BLF7G22LS-250P BLF7G22LS-160 1/2 BLF7G22LS-250P 1/2 BLF7G27-75P BLF7G27LS-100 1/2 BLF7G27LS-150P 1/2 BLF7G27-75P BLF6G27-45 2x BLF6G27-45 2x BLF6G27-45 BLC6G27-100 1/2 BLF7G27-150P 1/2 BLF7G27LS-150P BLF7G27LS-140 BLF7G27L-250PB 1/2 BLF7G38LS-75P BLF6G38-50 BLF7G38-75

Freq band (MHz)

728-821 MHz 790-821 54.5 790-821 55.5 790-821 57.2 728-768 58 869-960 MHz 869-894 52 869-894 52.7 869-894 53 920-960 53 920-960 56.2 869-894 58 925-960 58.3 925-960 58.9 869-894 58 1476-1511 MHz 1476-1511 58 1476-1511 58.1 1805-1880 MHz (DCS) 1805-1880 52 1805-1880 52.5 1805-1880 55 1805-1880 55 1805-1880 55.5 1805-1880 57.5 1805-1880 57.9 1805-1880 58.2 1930-1990 MHz (PCS) 1930-1990 53 1930-1990 55.2 1930-1990 56 1930-1990 56 1930-1990 57.5 1930-1990 58 1930-1990 58.2 1880-2025 MHz (TD-SCDMA) 2010-2025 47 1880-2025 50 2010-2025 50 1880 - 1920 52.5 2110-2170 MHz (UMTS / LTE) 2110-2170 47 2110-2170 54.7 2110-2170 54.9 2110-2170 55 2110-2170 55.5 2110-2170 56 2110-2170 56.5 2110-2170 57 2110-2170 58 2110-2170 58.5 2110-2170 59 2110-2170 55 2300-2400 MHz (WiBRO / LTE) 2300-2400 49.5 2300-2400 52 2300-2400 52.5 2500-2700 MHz (WiMAX / LTE) 2570-2620 49.5 2500-2700 50 2500-2600 52 2600-2700 52 2600-2700 52 2500-2700 52.5 2300-2400 52.5 2500-2700 55 2500-2700 56.5 3300-3800 MHz (WiMAX) 3400-3600 49.5 3400-3600 51 3400-3600 52.5 82

NXP Semiconductors RF Manual 14th edition

3.7.2

Broadcast / ISM (industrial, scientific, medical) RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview Why choose NXP Semiconductors’ RF power transistors for broadcast / ISM applications: ` Highest power ` Best ruggedness ` Best broadband performance ` Best-in-class design support ` Very low thermal resistance design for unrivalled reliability NXP’s leading LDMOS technologies together with advanced package concepts enable best in class performing power amplifiers. We offer industry’s highest power and best ruggedness for all broadcast technologies. Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and High Frequency (HF) applications as well as covering ISM frequency bands.

3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS Line up
Function driver driver driver driver final driver final final final final Type BLF871 BLF871S BLF881 BLF881S BLF645 BLF571 BLF573 BLF573S BLF574 BLF578 Package SOT467C SOT467B SOT467C SOT467C SOT540A SOT467C SOT502A3 SOT502B SOT539A SOT539A frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1400 0 - 1400 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 PL(AV) W 100 24 100 24 140 33 140 33 100 100 20 300 300 500 1200 1000

ηD
% 47 33 47 33 49 34 49 34 45 56 70 70 70 70 71 75

Gp dB 21 22 21 22 21 21 21 21 18 18 27.5 27.2 27.2 26.5 24 26

@VDS V 40 40 40 40 50 50 50 50 32 32 50 50 50 50 50 50

Mode of operation 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE CW CW CW CW CW PULSED RF CW

3.7.2.2 470-876 MHz (UHF) LDMOS line up
Function driver driver final driver driver final final final Type BLF871 BLF871S BLF878 BLF881S BLF881 BLF888 BLF888AS BLF888A Package SOT467C SOT467B SOT979A SOT467C SOT467C SOT979A SOT539B SOT539B frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 470 - 860 470 - 860 0 - 1000 0 - 1000 0 - 1000 0 - 1000 470 - 860 470 - 860 470 - 860 470 - 860 470 - 860 470 - 860 PL(AV) W 100 24 100 24 300 75 120 30 120 30 250 110 250 110 255 115

ηD
% 47 33 47 33 32 46 48 31 48 31 46 31 46 31 47 32

Gp dB 21 22 21 22 21 21 21 21 21 21 19 19 19 19 19 19

@VDS V 40 40 40 40 42 42 50 50 50 50 50 50 50 50 50 50

Mode of operation 2-TONE DVB-T 2-TONE DVB-T CW DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T

3.7.2.3 28-225 Mhz General purpose VDMOS
Function final final Type BLF177 BLF278 Package SOT121B SOT262A1 frange MHz 28-108 108-225 PL(AV) W 150 250-300

ηD
% >35 50-80

Gp dB 20 14-20

@VDS V 50 50

Mode of operation CW class AB CW class AB 83

NXP Semiconductors RF Manual 14th edition

3.7.3

Microwave LDMOS RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview Device naming conventions RF power microwave transistors
B L S 6 G 2731 S -120 G option: gullwing shaped leads P1dB power S: earless package P: pallet frequency band (in 100MHz; here: 2700-3100) G: standard LDMOS (<=28V) H: high voltage LDMOS (50V) LDMOS technology generation A: avionics frequency band operation L: L-Band frequency operation S: S-Band frequency operation L: high frequency power transistor B: semiconductor die made of Si

Why choose NXP Semiconductors’ microwave RF power transistors ` High gain ` High efficiency ` Highest reliability ` Improved pulse droop and insertion phase ` Improved ruggedness - overdrive without risk to +5 dB ` Reduces component count and helps simplify L- and S-band radar design ` Uses non-toxic, ROHS compliant packages

3.7.3.1 Avionics LDMOS transistors
Function driver final final final Type BLL6H0514-25 BLA6H0912-500 BLA6H1011-600 BLA6G1011-200R Package SOT467C SOT634A SOT539A SOT502A2 frange MHz 500 - 1400 960 - 1215 1030 - 1090 1030 - 1090 PL W 25 (min) 450 600 200

ηD
% 50 50 52 65

Gp dB 19 17 19 20

@VDS V 50 50 50 28

Mode of operation PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB

3.7.3.2 L-band LDMOS transistors
Function driver final final final Type BLL6H0514-25 BLL6H1214-500 BLL6H1214L(S)-250 BLL6HL(S)0514-130 Package SOT467C SOT539A SOT502 SOT1135 frange MHz 500 - 1400 1200 - 1400 1200 - 1400 1200 - 1400 PL W 25 (min) 500 (min) 250 130

ηD
% 50 50 55 50

Gp dB 19 17 17 18

@VDS V 50 50 50 50

Mode of operation PULSED RF; class AB PULSED RF; class AB Pulsed RF Pulsed RF

3.7.3.3 S-band LDMOS transistors
Function driver driver driver final final final final final final final final final final Type BLS6G2731-6G BLS6G3135-20 BLS6G3135S-20 BLS6G2731-120 BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135S-120 BLS7G2933P-200 BLS7G2731P-200 BLS6G2731S-130 BLS7G2729-300P BLS7G2729S-300P Package SOT975C SOT608A SOT608B SOT502A SOT502B SOT922-1 SOT502A SOT502B pallet pallet SOT922 SOT539A SOT539B frange MHz 2700 - 3100 3100 - 3500 3100 - 3500 2700 - 3100 2700 - 3100 2900 - 3300 3100 - 3500 3100 - 3500 2900 - 3300 2700 - 3100 2700 - 3100 2700-2900 2700-2900 PL W 6 20 20 120 120 130 120 120 200 200 130 300 300

ηD
% 33 45 45 48 48 47 43 43 45 45 49 50 50

Gp dB 15 15.5 15.5 13.5 13.5 12.5 11 11 11 11 13 15 15

@VDS V 32 32 32 32 32 32 32 32 32 32 32 32 32

Mode of operation PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB Pulsed RF Pulsed RF Pulsed RF

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3.8

High Speed Data Converters

Analog performance, power optimization and ease of use are the perennial industry challenges for high-speed data converters used in communications. For many years NXP has been quietly developing data converters for captive applications. It is now opening it's high-speed data converters to the entire market, offering a broad portfolio of highly competitive ADCs and DACs featuring three different data interfaces, including the industry’s first implementation of the JEDEC JESD204A serial data interface.

3.8.1 High Speed ADCs
Type ADC1613D series ADC1610S series ADC1415S series ADC1413D series * ADC1412D series ADC1410S series ADC1215S series ADC1213D series ADC1212D series * ADC1210S series ADC1207S080 ADC1206S series ADC1115S125 ADC1113D125 ADC1015S series ADC1010S series ADC1006S series Supply Power SFDR SNR Voltage Dissipation Digital Interface Package (dBc) (dBFS) (V) (mW) Dual 16-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3 445 93 73.2 JESD204A HVQFN56 8x8 Single 16-bit ADC up to 65/80/105/125Msps 1.8 / 3.3 350 93 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6 Single 14-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5 550 91 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6 Dual 14-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3 445 91 73.2 JESD204A HVQFN56 8x8 Dual 14-bit ADC up to 65/80/105/125Msps 1.8 / 3.3 350 91 73.2 LVCMOS and LVDS/DRR HVQFN64 9x9 Single 14-bit ADC up to 65/80/105/125Msps 1.8 / 3.3 350 91 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6 Single 12-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5 550 91 70.7 LVCMOS and LVDS/DRR HVQFN40 6x6 Dual 12-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3 445 91 70.7 JESD204A HVQFN56 8x8 Dual 12-bit ADC up to 65/80/105/125Msps 1.8 / 3.3 350 91 70.7 LVCMOS and LVDS/DRR HVQFN64 9x9 Single 12-bit ADC up to 65/80/105/125Msps 1.8 / 3.3 350 91 70.7 LVCMOS and LVDS/DRR HVQFN40 6x6 Single 12-bit ADC 80 Msps 5 840 90 71 parallel LVCMOS HTQFN48 7x7 Single 12-bit ADC 40/50/70 Msps 3.3 / 5.0 550 72 64 parallel CMOS and TTL QFP44 Single 11-bit ADC up to 125Msps with input buffer 1.8 / 3.3/5 790 90 66.7 LVCMOS and LVDS/DRR HVQFN40 6x6 Dual 11-bit ADC up to 125Msps with serial interface 1.8 / 3.3 635 90 66.7 JESD204A HVQFN56 8x8 Single 10-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5 550 91 61.7 LVCMOS and LVDS/DRR HVQFN40 6x6 Single 10-bit ADC up to 125Msps 1.8 / 3.3 350 91 61.7 LVCMOS and LVDS/DRR HVQFN40 6x6 Single 10-bit ADC 50/70 Msps 3.3 / 5.0 550 71 59 parallel CMOS and TTL QFP44 Description

3.8.2 High Speed DACs
Supply Power Voltage Dissipation (V) (mW) DAC1408D series * Dual 14-bit DAC up to 650/750 Msps 1.8 / 3.3 850 DAC1405D series Dual 14-bit DAC up to 650/750 Msps 1.8 / 3.3 550 DAC1403D160 Dual 14-bit DAC 160 Msps 3.3 210 DAC1401D125 Dual 14-bit DAC 125 Msps 3.3 105 DAC1208D series Dual 12-bit DAC up to 650/750 Msps 1.8 / 3.3 850 DAC1205D series Dual 12-bit DAC up to 650/750 Msps 1.8 / 3.3 550 DAC1203D160 Dual 12-bit DAC 160 Msps 3.3 210 DAC1201D125 Dual 12-bit DAC 125 Msps 3.3 105 DAC1008D series Dual 10-bit DAC up to 650/750 Msps 1.8 / 3.3 850 DAC1005D series Dual 10-bit DAC up to 650/750 Msps 1.8 / 3.3 550 DAC1003D160 Dual 10-bit DAC 160 Msps 3.3 210 Dual 10-bit DAC 125 Msps 3.3 105 DAC1001D125 * = check status at 3.1 new products, as this type has not been released yet for mass production. Bold Red = New, highly recommended product Type Description SFDR (dBc) 77 77 80 88 77 80 77 65 77 77 80 65 Interpolation 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x Package HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48

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4. Design support
This chapter will make it easier to find and get hold of design-in information and materials, with web links or references to the NXP representative / authorized distributor.
Streamline your RF design with leading RF EDA software Design kits of the NXP high performance RF small signal products. NXP offers it’s RF small signal portfolio in leading RF Electronic Design Automation (EDA) software of: Ansoft Designer RF, AWR Microwave Office and Agilent Advanced Design System (ADS), including installation manuals, on the NXP web: www.nxp.com/models. To predict the behavior of a design by performing simulations, RF EDA software enables design engineers to reduce the number of design cycles, lower the risks and make better RF component choice for RF applications.

4.1

S-Parameters

4.2
4.2.1

Simulation models
Spice models

S-Parameters help you to simulate the behaviour of our devices to your specific adjustments for e.g. voltage, current. Wideband transistors, FETs & MMICs First, click on the type number, which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the S-Parameters.
Wideband transistors BFG540W BFG541 BFG590 BFG591 BFG93A BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ67 BFQ67W BFR106 BFR505 BFR520 BFR540 BFR92A BFR92AW BFR93A FETs BF1212 BF1212R BF1212WR MMICs BGM1012 BGM1013 BGM1014 BGM2011 BGA2715 BGA2716 BGA2717 BGA2011 BGA2012 BGA6289 NXP Semiconductors RF Manual 14th edition

Spice models help you to create the optimal performance and to understand which external components have a certain influence on that performance. Wideband transistors, FETs & Varicaps diodes First, click on the type number which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the Spice models.
Wideband transistors BFG505 BFG92A/X BFG505/X BFG93A BFG505W/X BFG94 BFG520 BFG97 BFG520/X BFM505 BFG520/XR BFM520 BFG520W BFQ149 BFG520W/X BFQ18A BFG540 BFQ19 BFG540/X BFQ540 BFG540/XR BFQ67 BFG540W BFQ67W BFG540W/X BFR106 BFG540W/XR BFR505 BFG541 BFR505T BFG590 BFR520 BFG590/X BFR540 BFG591 BFR92A BFG67 BFR92AW BFG67/X BFR93A FETs BF909

BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG520 BFG520W BFG540

BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BFU725F/N1 BRF505T PBR941 PBR951 PRF947 PRF949 PRF957

BF1211 BF1211R BF1211WR

BF511 BF513 BF862

BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W

BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W PBR941 PBR951 PRF947 PRF949 PRF957

BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGU7003 BGA2712 BGM1011 86

BGA6489 BGA6589 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866

BF862 BF904

BF908

BF998

BB145B BB149 BB149A

BB156 BB179 BB179B

Varicap diodes BB201 BB202 BB207

BB208-02

4.2.2

RF Power device simulation models

4.4.1

IC, MMIC and SiGe:C transistor demo boards

For easy design-in, NXP provides fully physics based, electrothermal models for the RF power transistors. These models are available for Advanced Design System (ADS)® from Agilent and for Microwave Office (MWO)® from Applied Wave Research (AWR). Newly developed models per product are based on the best in class RFLDMOS model, developed by NXP Research, a recognized leader in physics based models. This concept yields most reliable simulation results over a wide range of electrical conditions. The standard models fully support DC, AC, s-parameter (small signal), harmonic balance (large signal) and time domain simulations. NXP RF power models allow designers to assess the performance of complex PAsystems at an early stage of the development process. The available models come with all necessary libraries and documentation, and can be downloaded at NXP’s website.
Product Type BLF369 BLF3G21-6 BLF571 BLF573(S) BLF574 BLF578 BLF645 BLF6G10(LS)-135RN BLF6G10L(S)-260PRN BLF6G10(S)-45 BLF6G20-45 BLF6G20(LS)-180RN BLF6G20(S)-230PRN BLF6G20S-45 BLF6G21-10G BLF6G22(LS)-180RN BLF6G27-10(G) ADS MWO Product Type Model Model Y N BLF6G27(S)-45 Y N BLF6G27(LS)-135 Y Y BLF6G27(LS)-75 Y Y BLF6G38-10(G) Y Y BLF6G38(LS)-100 Y Y BLF6G38(LS)-50 Y N BLF6G38(S)-25 N Y BLF7G22L(S)-130 Y N BLF871(S) Y Y BLF878 Y Y BLF881(S) Y N BLF888 Y N BLL6H0514-25 Y Y BLL6H1214-500 Y N BLM6G22-30 Y N BLS6G3135(S)-120 Y N BLS6G3135(S)-20 ADS MWO Model Model Y Y Y N Y N Y N Y N Y Y Y Y Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N

RF Small Signal demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).
RF small signal demo boards BGA2776 BGM1011 BGA2800 BGM1012 BGA2801 BGM1013 BGA2815 BGM1014 BGA2816 BGU7003 BGA2850 BGU7005 BGA2865 TFF1003HN BGA2866 TFF11070HN BGA6289 TFF11073HN BGA6489 TFF11077HN BGA6589 TFF11080HN BGA6589 TFF11084HN BGA7024 TFF11088HN BGA7124 TFF11092HN

BFU725F/N1 BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748 BGA2771

TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN

BGU7005 demo board

BGA7124 demo board

4.4.2

RF power transistor demo boards

4.3

Application notes

http://www.nxp.com/products/all_appnotes/ For the application notes we refer you to chapter 1 of this manual. For each application, we have given the recommended application notes which are available on the internet (with interactive link) or via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).

Demo boards are available (although limited) via your local NXP representative (see the last chapter: Web Links and Contacts).

4.4

Demo boards

BGA2001 demo board NXP Semiconductors RF Manual 14th edition 87

4.4.3

High Speed Converter demo boards

4.7

Datasheets

High Speed Converter demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter; Web Links and Contacts).
ADC Demo Boards Type ADC1006S series ADC1010S series ADC1015S series ADC1113D125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series ADC1213D series ADC1215S series ADC1410S series ADC1412D series ADC1413D series ADC1415S series ADC1610S series ADC1613D series DAC Demo Boards Type DAC1001D125 DAC1003D160 DAC1005D series DAC1201D125 DAC1203D160 DAC1401D125 DAC1403D160 DAC1405D series DAC1205D series DAC1408D series DAC1208D series DAC1008D series

For all released and most non-released products for RF power, datasheets are available on the NXP Semiconductors internet. Simply ‘clicking’ on a product type (in this manual chapter 1 or 2) takes you to the corresponding product information page on the NXP Semiconductors website.

4.8

Design-in support

If you need special design-in support from our design-in engineers, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts), to pass on your request to the RF development teams.

Different versions available via NXP sales representative

4.9

NEW: interactive selection guides

4.5

Samples of products in development

For all RF product groups, you can find easy-to-use parametric filters to help you to chose the right device for your design, e.g. www.nxp.com/mmics, click on selection guide.

For development samples, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts) to order the latest versions at the RF development team.

4.6

Samples of released products

For all released and most non-released products for RF power, samples are available in the sample warehouse. Look on the home page of the NXP web site for the link to the online sample store: www.nxp.com

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5. Cross-references & replacements
NXP cross-references: http://www.nxp.com/search/ NXP end-of-life: http://www.nxp.com/products/eol/

5.1 Cross-references: Manufacturer types versus NXP types
In alphabetical order of manufacturer type Abbreviations: BS diode CATV PD CATV PPA CATV PPA/HG CATV RA FET Standard MMIC Varicap WB trs 1-4 WB trs 5-7
Manufacturer type

Band Switch Diode CATV Power Doubler CATV Push Pull Amplifier CATV Push Pull Amplifier High Gain CATV Reverse Amplifier Field Effect Transistor Standard Monolithic Microwave Integrated Circuit Varicap Diode Wideband Transistor 1-4 generation Wideband Transistor 5-7 generation
Manufacturer NXP type Product family Manufacturer type Manufacturer NXP type Product family

10500 10502 0910-150M 0910-300M 0910-60M 0912-45 1011LD200 1011LD300 1015MP 1035MP 1214-30 1214-32L 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239 1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252

Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba

BLA6H0912-500 BLA6H0912-500 BLF871 BLF878 BLF878 BLL6H0514-25 BLA6G1011-200R BLA6G1011-200R BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-26 BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W

Microwave Microwave Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode

1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 1SV278 1SV279 1SV282 1SV282 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308 1SV322 1T362 1T362A 1T363A 1T368A 1T369 1T379 1T397 1T399 1T402 1T403 1T404A 1T405A

Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba Toshiba PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC

BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BB179 BB179 BB178 BB187 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02 BB202LX BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB178 BB187 BB187

Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap 89

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Manufacturer

NXP type

Product family

Manufacturer type

Manufacturer

NXP type

Product family

1T406 1T408 2729-125 2729-170 2731-100M 2931-150 2F1G20DS 2F1G20P 2F1G22DS 2F1G23P 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N3330 2N3331 2N4220 2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 90

PEC PEC Microsemi Microsemi Microsemi Microsemi RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas

BB182 BB187 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 CGD1042H CGY1041 CGD1042H CGY1043 CGD1044H BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C J176 J176 BF245A BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W

Varicap Varicap Microwave Microwave Microwave Microwave CATV PD CATV PP CATV PD CATV PP CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7

2SC5624 2SC5631 2SC6023 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508 3SK290 BA592 BA595 BA595 BA597 BA885 BA892 BA892-02V BA892-02V BA892V-02V-GS08 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR63V-02V-GS08 BAR63V-05W-GS08 BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64V-02V-GS08 BAR64V-04-GS08 BAR64V-05-GS08 BAR64V-06-GS08 BAR64V-06W-GS08 BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR65V-02V-GS08 BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M

Renesas Renesas Sanyo Standard Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas

BFG425W BFQ540 BFG424W J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 J113 PMBFJ308 BF998WR BA591 BAP51-03 BAP70-03 BAP70-03 BAP70-03 BA891 BA277 BA891 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63LX BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP63-02 BAP63-05W BAP64LX BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64-02 BAP64-04 BAP64-05 BAP64-06 BAP64-06W BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP65-02 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R

WB trs 5-7 WB trs 1-4 WB trs 5-7 FET FET FET FET FET FET FET FET FET FET FET FET FET FET BS diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET

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Manufacturer

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Manufacturer type

Manufacturer

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Product family

BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005S BF1009S BF1009SW BF2030 BF2030R BF2030W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998-GS08 BF998R BF998R-GS08 BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP181T-GS08 BFP182 BFP183 BFP183R BFP183T-GS08 BFP183TW-GS08 BFP193 BFP193W

Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay Vishay Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Vishay Vishay Infineon Infineon

BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105 BF1109 BF1109WR BF1101 BF1101R BF1101WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998 BF998R BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG520/X BFG520W/X BFG540/X BFG540W/XR

FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4

BFP196T-GS08 BFP196TR-GS08 BFP196TRW-GS08 BFP196TW-GS08 BFP196W BFP280 BFP405 BFP420 BFP450 BFP67-GS08 BFP67R-GS08 BFP740 BFP740F BFP81 BFP92A-GS08 BFP93A BFP93A-GS08 BFQ193 BFQ19S BFQ67-GS08 BFR106 BFR180 BFR180W BFR181 BFR181T-GS08 BFR181TW-GS08 BFR181W BFR182 BFR182W BFR183 BFR183T-GS08 BFR183TW-GS08 BFR183W BFR193 BFR193TW-GS08 BFR193W BFR196T-GS08 BFR196TW-GS08 BFR35AP BFR92AL BFR92AW-GS08 BFR92P BFR92W BFR93A BFR93AL BFR93AW BFR93AW-GS08 BFR93-GS08 BFS17-GS08 BFS17-GS08 BFS17L BFS17P BFS17W BFS17W-GS08 BFS481 BFS483 BFT92 BFT93 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMY91 CMY91

Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Vishay Infineon Vishay Infineon Infineon Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Infineon Vishay Vishay Infineon Freescale Vishay Infineon Infineon Infineon Freescale Infineon Vishay Vishay Vishay Vishay Freescale Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon Infineon

BFG540/X BFG540/XR BFG540W/XR BFG540W/X BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFG67/X BFG67/X BFU725F BFU725F BFG92A/X BFG92A/X BFG93A/X BFG93A/X BFQ540 BFQ19 BFQ67W BFR106 BFR505 BFS505 BFR520 BFR520 BFS520 BFS520 PBR941 PRF947 PBR951 PBR951 PRF957 PRF957 PBR951 PRF957 PRF957 BFR540 BFS540 BFR92A BFR92A BFR92AW BFR92A BFR92AW BFR93A BFR93A BFR93AW BFR93AW BFR93A BFS17 BFS17A BFS17 BFS17A BFS17W BFS17W BFM505 BFM520 BFT92 BFT93 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA2022 BGA2022

WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC WB trs 1-4 91

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CXE1089Z CXE1089Z D5540185 D7540185 D7540200 D8640185 DME500 EC2C03C F2046 F2048 F2247 FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315 HVU316 HVU363A HVU363A HVU363B IB0810M100 IB0912L30 IB0912L70 92

RFMD RFMD Standard Standard Standard Standard Microsemi Sanyo POLYFET POLYFET POLYFET Skyworks Skyworks Agilent Agilent Agilent Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Integra Integra Integra

BGA6489 BGA6589 BGD502 BGD702 BGD704 BGD802 BLAH0912-500 BB145B BLF542 BLF543 BLF522 BB148 BB178 BFG410W BFG425W BFG480W BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148 BB131 BB148 BB153 BB148 BLF871 BLA6H0514-25 BLA6H0514-25

MMIC MMIC CATV PD CATV PD CATV PD CATV PD Microwave Varicap Broadcast Broadcast Broadcast Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Broadcast Microwave Microwave

IB0912M210 IB0912M500 IB0912M600 IB1011L15 IB1011L220 IB1011L40 IB1011L470 IB1011M140 IB1011M190 IB1011M250 IB1011S190 IB1011S250 IB1012S10 IB1012S20 IB2729M5 IB2729M90 IB2731M110 IB2731MH110 IB2931MH155 IB3134M100 IB3135MH100 IBP1214M700 IBP1214M700 IBP3135M150 IDM175CW300 IDM500CW150 IDM500CW200 IDM500CW300 IDM500CW80 ILD1011M15 ILD1011M150 ILD1011M15HV ILD1011M160HV ILD1011M250 ILD1011M30 ILD1011M400 ILD1011M450HV ILD1011M550HV ILD1214M10 ILD2731M140 ILD3135M120 ILP1214EL200 INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S JTDA150A KP2310R KTK920BT KTK920T KV1835E LC421 MA2S077 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368 MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141

Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Agilent Standard Standard Standard Standard Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Microsemi Toko KEC KEC Toko POLYFET Standard Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita

BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0514-25 BLS6G2731-6G BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G3135S-120 BLS6G3135S-120 BLL6H1214-500 BLL6H1214-500 BLS6G3135S-120 BLF278 BLF881 BLF888 BLF878 BLF871 BLL6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H1011-600 BLL6H0514-25 BLS6G2731-120 BLS6G3135S-120 BLS7G2933P-200 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP51-02 BAP51-03 BAP63-02 BAP50-02 BA891 BLF177 BAP64-04W BF1108 BF1108R BB199 BLF544 BA277 BB178 BB187 BB179 BB182 BB202 BB153 BB148 BB131 BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03

Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode Broadcast PIN diode FET FET Varicap Broadcast BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode

NXP Semiconductors RF Manual 14th edition

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MA4P278-287 MA4P789-1141 MA4P789ST-287 MAX2659 MC7712 MC7716 MC7722 MC7726 MC-7831 MC-7831-HA MC-7832 MC-7832-HA MC-7833 MC-7836 MC-7836 MC-7845 MC-7846 MC-7847 MC7852 MC7866 MC-7881 MC-7882 MC-7883 MC-7884 MC-7891 MC-7893 MC-7894 MC-7896 MCH4009 MD7P19130 MD7P19130H MD7P19130H (2) MDS400 MDS800 MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 MHW6182-6 MHW6182T MHW6185B MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C2 MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222

Matsushita Matsushita Matsushita Maxim NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC Sanyo Freescale Freescale Freescale Microsemi Microsemi Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BAP70-03 BAP1321-03 BAP1321-04 BGU7005 BGY785A BGY787 BGY785A BGY787 BGY885A BGY1085A BGY887 CGY1041 BGY887B BGY887B CGY1047 BGD802 CGD942C CGD944C BGY885A BGD816L BGD802 BGD814 CGD942C CGD944C CGD1042H CGD1042H CDG1044H CGD1044H BFG424F BLF6G20LS-110 BLF6G20LS-75 BLF6G20(LS)-180RN BLA6H0912-500 BLA6H1011-600 BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A BGY685A BGY585A BGD502 BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787

PIN diode PIN diode PIN diode MMIC CATV PPA CATV PPA CATV PPA CATV PPA CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD WB trs 5-7 Base Station Base Station Base station Microwave Microwave CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA

MHW7222A MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N MHW9146 MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MPAL2731M15 MPAL2731M30

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale ONSemicond. ONSemicond. Freescale Freescale Integra Integra

BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C BGY883 BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGY587B BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310 BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BLS6G2731-6G BLS6G2731-6G

CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD Microwave Microwave 93

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MPAL3035M15 MPAL3035M30 MPF102 MPF970 MPF971 MRF10005 MRF1000MB MRF10031 MRF1004MB MRF10120 MRF10150 MRF10350 MRF10502 MRF1090MB MRF1150MA MRF1150MB MRF134 MRF136 MRF136Y MRF137 MRF140 MRF141 MRF141G MRF148A MRF150 MRF151 MRF151A MRF151G MRF154 MRF157 MRF158 MRF160 MRF166C MRF166W MRF171A MRF173 MRF173CQ MRF174 MRF175GU MRF175GV MRF175LU MRF176GU MRF176GV MRF177 MRF18030ALR3(1) MRF18030ALR3(1) MRF18030ALSR3(1) MRF18030ALSR3(1) MRF18030BLR3(1) MRF18030BLR3(1) MRF18030BLSR3(1) MRF18030BLSR3(1) MRF18060AL(2) MRF18060BL(2) MRF18085AL(2) MRF18085BL (2) MRF18085BL(2) MRF18090AR3(1) MRF18090B (2) MRF18090B(2) MRF19030L(2) MRF19030L(2) MRF19045L(2) MRF19060L(2) MRF19085LR3(1) MRF19085LSR3(1) MRF19090R3 (1) MRF19090R3(1) MRF19090SR3 (1) MRF19090SR3(1) MRF19125 (2) MRF19125(2) MRF21010LR1(1) MRF21010LSR1(1) MRF21030LR3(1) MRF21030LSR3(1) 94

Integra Integra Standard Standard Standard M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BLS6G2731-6G BLS6G2731-6G BF245A J174 J176 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLF871 BLF871 BLF881 BLF881 BLF177 BLF177 BLF278 BLF175 BLF177 BLF177 BLF177 BLF278 BLF574 BLF574 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF881 BLF881 BLF278 BLF871 BLF881 BLF573S BLF871 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLC6G20-75 BLC6G20-75 BLC6G20-75 BLF7G20L(S)-300P BLC6G20-75 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G21-30 BLF6G20-45 BLF6G20-45 BLF6G20-45 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF3G21-6 BLF3G21-6 BLF6G22-30 BLF6G22-45

Microwave Microwave FET FET FET Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base station Base Station Base Station Base station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base station Base Station Base station Base Station Base station Base Station Base Station Base Station Base Station Base Station

MRF21045LR3(1) MRF21045LSR3(1) MRF21060L(2) MRF21085L(2) MRF21090(2) MRF21120R6(1) MRF21125(2) MRF21125SR3(1) MRF21180R6(1) MRF275G MRF275L MRF281SR1(1) MRF281ZR1(1) MRF282SR1(1) MRF282ZR1(1) MRF284LR1(1) MRF284LSR1(1) MRF313 MRF314 MRF316 MRF317 MRF321 MRF323 MRF327 MRF372 (3) MRF373ALR1 (2) MRF374A (1) MRF377H (2) MRF377H(2) MRF392 MRF393 MRF421 MRF422 MRF426 MRF428 MRF429 MRF448 MRF454 MRF455 MRF577 MRF5811L MRF5P20180HR6(1) MRF5P21045NR1 (1) MRF5P21180HR6 (1) MRF5P21180HR6(1) MRF5S19060N(2) MRF5S19090HR3(1) MRF5S19090HSR3(1) MRF5S19100H (2) MRF5S19100H(2) MRF5S19130H (2) MRF5S19130H(2) MRF5S19150H (2) MRF5S19150H(2) MRF5S21045N (2) MRF5S21045N(2) MRF5S21090HR3(1) MRF5S21090HSR3(1) MRF5S21100HR3(1) MRF5S21100HSR3(1) MRF5S21130HR3(1) MRF5S21130HSR3(1) MRF5S21150H(2) MRF5S9150H (2) MRF6P18190HR6(1) MRF6P21190HR6 (1) MRF6P21190HR6(1) MRF6P3300H (2) MRF6P3300H(2) MRF6S18060N(2) MRF6S18100N(2) MRF6S18140H(2) MRF6S19060N(2) MRF6S19100H (2) MRF6S19100H(2) MRF6S19100N(2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BLF6G22-45 BLF6G22-45 BLF6G22-75 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-130 BLF6G22-180 BLF881 BLF871 BLF6G21-6 BLF6G21-6 BLF1822-10 BLF1822-10 BLF3G21-30 BLF3G21-30 BLF871 BLF881 BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF878 BLF881 BLF878 BLF872 BLF881 BLF871 BLF871 BLF177 BLF871 BLF177 BLF177 BLF573S BLF871 BLF871 PRF957 BFG93A/X BLF6G20-180P BLD6G22L(S)-50 BLF6G22(LS)-180RN BLF6G20-180P BLF6G20-75 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-140P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF6G20LS-140 BLF6G22-150P BLD6G22L(S)-50 BLF1822-10 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-150P BLF6G10(LS)-160RN BLF6G20-180P BLF7G22LS-130 BLF6G20-180P BLF888 BLF878 BLF6G20-75 BLF6G20-110 BLF6G20-140 BLF6G20-75 BLF7G20L(S)-140P BLF6G20-110 BLF6G20-110

Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Base Station Base station Base station Base Station Base Station Base Station Base Station Base station Base Station Base station Base Station Base station Base Station Base station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base station Base Station Base station Base Station Base station Broadcast Base Station Base Station Base Station Base Station Base station Base Station Base Station

NXP Semiconductors RF Manual 14th edition

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MRF6S19120H (2) MRF6S19120H(2) MRF6S19140H (2) MRF6S19140H(2) MRF6S19200H (2) MRF6S20010 MRF6S20010 MRF6S20010N (2) MRF6S20010N(2) MRF6S20010N(2) MRF6S21050L(2) MRF6S21060N (2) MRF6S21060N(2) MRF6S21100H (2) MRF6S21100H(2) MRF6S21100N (2) MRF6S21100N(2) MRF6S21140H (2) MRF6S21140H(2) MRF6S21190H MRF6S21190H MRF6S21190H (2) MRF6S23100H (2) MRF6S23100H (2) MRF6S27015N MRF6S27015N (2) MRF6S27015N (2) MRF6S27050HR3 MRF6S27050HSR3 MRF6S27085H MRF6S27085H (2) MRF6S27085HR3 MRF6S27085HS MRF6S27085HSR3 MRF6V2010N (2) MRF6V2010N(2) MRF6V2010NBR1(18a) MRF6V2010NR1(18a) MRF6V2150N (2) MRF6V2150N(2) MRF6V2150NBR1(18a) MRF6V2150NR1(18a) MRF6V2300N (2) MRF6V2300N(2) MRF6V2300N(2) MRF6V4300N (2) MRF6VP11KH (1) MRF6VP21KH (1) MRF6VP2600H (1) MRF6VP2600HR6(18o) MRF6VP3450 MRF6VP3450H (4) MRF6VP41KH (2) MRF7S15100H (2) MRF7S18125AHS MRF7S18170H (2) MRF7S18170H(2) MRF7S19080H (2) MRF7S19080H(2) MRF7S19080HS MRF7S19100 MRF7S19100N (2) MRF7S19100N(2) MRF7S19120N(1) MRF7S19120NR1 (1) MRF7S19170H (2) MRF7S19170H(2) "MRF7S19210H PTFA192401F" MRF7S21080H (2) MRF7S21110H (2) MRF7S21110HS MRF7S21150H (2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BLF7G20L(S)-140P BLF6G20-110 BLF6G20LS-75 BLF6G20-140 BLF6G20-180PN, BLF7G20L(S)-200 BLM6G22-30 BLM6G22-30G BLM6G22-30 BLF6G21-6 BLF1822-10 BLF6G22-45 BLF6G22LS-75 BLF6G22-75 BLF6G22LS-100 BLF6G22-100 BLF6G22LS-100 BLF6G22-100 BLF6G22L(S)-130 BLF6G22-130 BLF6G22-180P BLF6G22-180PN BLF7G22L(S)-200 BLF7G27L(S)-75P BLF7G27L(S)-75P BLF6G27-10 BLF6G27-10(G) BLF6G27-10(G) BLF6G27-45 BLF6G27S-45 BLF6G27LS-135 BLF7G27L(S)-140 BLF6G27-135 BLF6G27LS-75 BLF6G27LS-135 BLF571 BLF244 BLF872 BLF871 BLF871 BLF177 BLF882 BLF881 BLF573S BLF369 BLF378 BLF573S BLF578 BLF578 BLF871 BLF881 BLF878 BLF878 BLF578 BLF6G15L(S)-40BRN/ BLF6G15L(S)-250PBRN BLF6G20LS-140 BLF7G20L(S)-200 BLF6G22-180 BLF6G20(LS)-110 BLF6G20-110 BLF6G20LS-75 BLF6G20LS-110 BLF6G20LS-75 BLF6G20-110 BLF6G20-110 BLF6G20LS-140 BLF6G20-180PN, BLF7G20L(S)-200 BLF6G20-180 BLF6G20-230PRN BLF6G22LS-100 BLF6G22L(S)-130 BLF6G22LS-100 BLF7G22LS-130

Base station Base Station Base station Base Station Base station Base Station Base Station Base station Base Station Base Station Base Station Base station Base Station Base station Base Station Base station Base Station Base station Base Station Base Station Base Station Base station Base station Base station Base Station Base station Base station Base station Base station Base Station Base station Base station Base Station Base station Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base Station Base station Base Station Base station Base Station Base Station Base Station Base station Base Station Base Station Base station Base station Base Station Base Station Base station Base station Base Station Base station

MRF7S21170 MRF7S21170H (2) MRF7S21210H (2) MRF7S27130H (2) MRF7S38010H MRF7S38010H (2) MRF7S38040H MRF7S38040H (2) MRF7S38040HR3 MRF7S38040HSR3 MRF8S18120H (2) MRF9030L (2) MRF9030N (2) MRF9135L (2) MRF917 MRF9200L (2) MRF9210R3 (1) MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MRFE6P3300H MRFE6S9125N MRFE6S9125N (2) MRFE6S9130H (2) MRFE6S9135H (2) MRFE6S9135HS MRFE6S9160H (2) MRFE6S9201H (2) MRFE6S9205HS MS1003 MS1004 MS1007 MS1008 MS1011 MS1051 MS1076 MS1078 MS1079 MS1204 MS1277 MS1278 MS1279 MS1280 MS1329 MS1453 MS1503 MS1506 MS1507 MS1509 MS1511 MS1533 MS2001 MS2003 MS2003 MS2005 MS2010 MS2176 MS2200 MS2207 MS2210 MS2215 MS2267 MS2321 MS24221 MS2441 MS2472 MS2473 MS2553 MS2575 MS3024 MSC1015MP MSC1175M MSC1400M

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi

BLF6G22LS-100 BLF6G22-180PN BLF7G22L(S)-250P BLF7G27L(S)-140 BLF6G38-10G BLF6G38(S)-25 BLF6G38LS-50 BLF6G38(LS)-50 BLF6G28-50 BLF6G28LS-51 BLF7G20L(S)-250P BLF6G10(LS)-160RN BLF6G10(LS)-160RN BLF6G10(LS)-135RN BFQ67W BLF6G10L(S)-260PRN BLF6G10L(S)-260PRN BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BLF878 BLF6G10LS-135R BLF6G10(LS)-135RN BLF6G10(LS)-135RN BLF6G10(LS)-200RN BLF6G10LS-135R BLF6G10(LS)-160RN BLF6G10(LS)-200RN BLF6G10LS-200RN BLF645 BLF888 BLF871 BLF871 BLF888 BLF871 BLF888 BLF871 BLF888 BLF645 BLF888 BLF888 BLF888 BLF888 BLF878 BLF881 BLF871 BLF881 BLF881 BLF871 BLF878 BLF645 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF878 BLA6H0912-500 BLA6H0912-500 BLA6G1011-200R BLF177 BLA6G1011-200R BLL6H0514-25 BLA6G1011-200R BLAH0912-500 BLAH0912-500 BLA6H1011-600 BLL6H0514-25 BLL6H0514-25 BLF6G22-45 BLL6H0514-25 BLA6G1011-200R BLAH0912-500

Base Station Base station Base station Base station Base Station Base station Base Station Base station Base station Base station Base station Base station Base station Base station WB trs 1-4 Base station Base station WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Broadcast Base Station Base station Base station Base station Base Station Base station Base station Base Station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Microwave Microwave Microwave 95

NXP Semiconductors RF Manual 14th edition

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MSC1450M MT4S200T MT4S200U MT4S34U MV2109G MW6IC2240N (2) MW6S004NT1 (1) MW7IC2725GNR1 MW7IC2725N MW7IC2725N MW7IC2725NB MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750N (3) MW7IC2750NR1 MW7IC3825GN MW7IC3825N MW7IC3825N (3) MW7IC3825NB MW7IC915N (1) NESG3032M14 NESG3032M14 PD55012-E PD55025-E PD55035-E PD57018-E PD57030-E PD57045-E PD57060-E PD57070-E PD85015-E PD85025C PD85025-E PD85035C PD85035-E PRF134 PRF134 PRF136 PRF136 PRF947B PRF947B PTF 180101S - 10 W PTF 191601E - 160 W PTF 210101M - 10 W PTF 210451E - 45 W PTF 210451F - 45 W PTF 240101S - 10 W PTF041501E-150W PTF041501E-150W PTF041501F-150W PTF041501F-150W PTF080101M-10W PTF080101M-10W PTF080101S-10W PTF080101S-10W PTF081301E-130W PTF081301E-130W PTF081301F-130W PTF081301F-130W PTF082001E-200W PTF082001E-200W PTF180101 PTF180101 PTFA 142401EL - 240 W PTFA 142401FL - 240 W PTFA 180701E - 70 W PTFA 180701F - 70 W PTFA 181001E - 100 W PTFA 181001F - 100 W PTFA 181001GL - 100 W PTFA 191001E - 100 W PTFA 191001F - 100 W PTFA 192001E - 200 W PTFA 192001F - 200 W PTFA 192401E - 240 W PTFA 192401F - 240 W 96

Microsemi Toshiba Toshiba Toshiba ONSemicond. Freescale Freescale Freescale Freescale Infineon Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale NEC Infineon ST ST ST ST ST ST ST ST ST ST ST ST ST POLYFET Infineon POLYFET Infineon Motorola Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Freescale Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon

BLA6H0912-500 BFG424W BFG425W BFG410W BB182LX BLF6G22LS-75 BLF6G21-10G BLF6G27-10G BLF6G27-10G BLF6G27-10G BLF6G27-10 BLF6G27-10 BLF6G27LS-75 BLF6G27(LS)-75 BLF6G27-75 BLF6G38S-25 BLF6G38-25 BLF6G38(S)-25 BLF6G38-25 BLF6G10L(S)-260PRN BFU725F BFU725F BLF571 BLF571 BLF571 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLF571 BLF571 BLF571 BLF571 BLF571 BLF242 BLF242 BLF244 BLF244 PRF947 PRF947 BLF6G20-40 BLF7G20L(S)-300P BLD6G22L(S)-50 BLF7G22L(S)-200 BLF7G22L(S)-200 BLF7G27L(S)-100 BLF647 BLF647 BLF647 BLF647 BLF1043 BLF1043 BLF1043 BLF1043 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF6G10-200 BLF6G10-200 BLF6G21-10G BLF6G21-10G BLF6G15L(S)-250PBRN BLF6G15L(S)-250PBRN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN

Microwave WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Base station Base station Base station Base Station Base Station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 5-7 WB trs 5-7 Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Broadcast Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station

PTFA 210301E - 30 W PTFA 210701E - 70 W PTFA 210701F - 70 W PTFA 211001E - 100 W PTFA 211801E - 180 W PTFA 211801F - 180 W PTFA 212001E - 200 W PTFA 212001F - 200 W PTFA 212002E - 200 W PTFA 212401E - 240 W PTFA 212401F - 240 W PTFA 240451E - 45 W PTFA 260451E - 45 W PTFA 260851E - 85 W PTFA 260851F - 85 W PTFA 261301E - 130 W PTFA 261301F - 130 W PTFA 261702E - 170 W PTFA043002E-300W PTFA043002E-300W PTFA080551E-55W PTFA080551F-55W PTFA081501E-150W PTFA081501F-150W PTFA091201E-120W PTFA091201F-120W PTMA 210452EL - 45 W PTMA 210452FL - 45 W PZFJ108 PZFJ109 PZFJ110 R0605250L R0605300L R2005240 RN142G RN142S RN242CS RN731V RN739D RN739F S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740190 S8740220 S8740230 S949T S949TR S949TRW S974T S974T-GS08 S974TR S974TR-GS08 S974TRW S974TRW-GS08 SA701 SA701 SA741 SD1018 SD1018-06 SD1019-05 SD1422 SD1485 SD56120 SD56120M SD57030 SD57030-01 SD57120 SD702 SDV701Q

Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Rohm Rohm Rohm Rohm Rohm Rohm Vishay Vishay Vishay Standard Vishay Vishay Vishay Standard Standard Standard Standard Standard Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay POLYFET POLYFET POLYFET Microsemi Microsemi Microsemi Microsemi Microsemi ST ST ST ST ST POLYFET AUK

BLD6G22L(S)-50 BLF6G22LS-75 BLF6G22LS-75 BLF6G22LS-100 BLF7G22L(S)-250P BLF7G22L(S)-250P BLF6G22-180PN BLF6G22-180PN BLF7G22LS-130 BLF6G22-180PN BLF6G22-180PN BLF7G27L(S)-100 BLF6G27(LS)-75 BLF6G27L(S)-45BN BLF6G27(LS)-135 BLF7G27L(S)-200P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF878 BLF878 BLF6G10-45 BLF6G10-45 BLF6G10-160 BLF6G10-160 BLF4G10-120 BLF4G10-120 BLF6G22(S)-45 BLF6G22(S)-45 J108 J109 J110 BGY66B BGY68 BGY67A BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGD812 BGD814 BGD816L BF1109 BF1109R BF1109WR BF1109 BF1109 BF1109R BF1109R BF1109WR BF1109WR BLF145 BLF245 BLF175 BLF881 BLF881 BLF645 BLF871 BLF888 BLF871 BLF881 BLL6H0514-25 BLL6H0514-25 BLF578 BLF246B BB179

Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station FET FET FET CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PD CATV PD CATV PD FET FET FET FET FET FET FET FET FET Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Broadcast Broadcast Varicap

NXP Semiconductors RF Manual 14th edition

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NXP type

Product family

SDV704Q SDV705Q SE701 SGA8343Z SK701 SK701 SK702 SM341 SM704 SM704 SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SR341 SR341 SR401 SR401 SR401 SR703 SR704U SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 SST4857 SST4859 SST4860 SST4861

AUK AUK POLYFET Sirenza POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard

BB178 BB182 BLF245B BFG425W BLF544B BLF545 BLF546 BLF177 BLF147 BLF246 BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 BLF378 BLF278 BLF248 BLF348 BLF368 BLF547 BLF548 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR56 BSR57 BSR58

Varicap Varicap Broadcast WB trs 5-7 Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET

ST704 ST744 ST744 SVC201SPA TAN150 TAN250A TAN300 TBB1016 TCS450 TCS800 TMF3201J TMF3202Z TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TPR400 TPR500 TPR500A TSDF54040 TSDF54040-GS08 TSDF54040X-GS08 TSDF54040XR-GS08 UF2805B UF28100H UF28100M UF28100V UF2810P UF28150J UF2815B UF2820P UF2820R UF2840G UF2840P UMIL100 UMIL100A UMIL60 UMIL80 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112 UTV200 UTV8100B VAM80 VMIL100 VRF148A VRF150 VRF151 VRF151G

POLYFET POLYFET POLYFET Sanyo Microsemi Microsemi Microsemi Renesas Microsemi Microsemi AUK AUK Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Microsemi Microsemi Microsemi Vishay Vishay Vishay Vishay M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Microsemi Microsemi Microsemi Microsemi NEC NEC NEC NEC NEC NEC NEC NEC Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi

BLF346 BLF276 BLF277 BB187 BLF177 BLA6G1011-200R BLA6G1011-200R BF1204 BLA6H0912-500 BLA6H1011-600 BF1204 BF1202WR PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BLAH0912-500 BLA6H0912-501 BLA6H0912-502 BF1102 BF1102 BF1102 BF1102R BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF878 BLF878 BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022 BLF571 BLF645 BLF878 BLF645 BLF881 BLF177 BLF177 BLF878

Broadcast Broadcast Broadcast Varicap Broadcast Microwave Microwave FET Microwave Microwave FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Microwave Microwave Microwave FET FET FET FET Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast

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5.2

Cross-references: NXP discontinued types versus NXP replacement types

In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band Switch Diode CATV Community Antenna Television System FET Field Effect Transistor Varicap Varicap Diode WB trs Wideband Transistor OM Optical Module

NXP discontinued type BA277-01 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851A BF851C BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93 BFR93AT

Product family NXP BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs

Replacement type NXP BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861A BF861C BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A BFR93AW

NXP discontinued type BFR93R BFU510 BFU540 BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/01 BGD502/01 BGD502/01 BGD502/03 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N BGD802N/07 BGD802N/07 BGD804N BGD804N BGD804N/02 BGD804N/02 BGD902 BGD902/07 BGD902L BGD904 BGD904/02 BGD904/07 BGD904L BGD906 BGD906/02 BGE847BO BGE847BO BGE847BO BGE847BO/FC

Product family NXP WB trs WB trs WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV

Replacement type NXP BFR93A BFU725F/N1 BFU725F/N1 BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD812 BGD812 BGD814 BGD814 BGD814 BGD814 BGD812 BGD902 BGD812 BGD814 BGD904 BGD904 BGD814 CGD942C BGD906 BGO827 BGO827 BGO827 BGO827/SC0

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NXP discontinued type BGE847BO/FC0 BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO847/01 BGO847/01 BGO847/FC0 BGO847/FC0 BGO847/FC01 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/01 BGY587/02 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B

Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV

Replacement type NXP BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO847 BGO847 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY785A BGY687 BGY687 BGE787B

NXP discontinued type BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC CGD914 CGY887A CGY887B GD923 ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4890 ON4990 PMBT3640/AT PN4392 PN4393

Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs FET FET

Replacement type NXP BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY885A BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 CGD1042H CGY1043 CGY1047 CGD942C BGY687 BGY687 BGY585A BGY588N BGY588N BGY885A BGY587 BGY1085A BGD712 BGD712 BGD885 BFS17 PMBF4392 PMBF4393

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6. Packing and packaging information
6.1 Packing quantities per package with relevant ordering code
Package SOD323/SC-76 Package dimensions LxWxH 1.7 x 1.25 x 0.9 Packing quantity 3,000 10,000 3,000 10,000 8,000 20,000 15,000 3,000 10,000 5,000 5,000 10,000 10,000 1,000 4,000 100 20 3,000 10,000 1,000 4,000 1,500 96 480 3,000 10,000 1,000 658 3,000 10,000 3,000 2,500 3,000 10,000 2,000 360 2,500 3,000 60 20 60 20 60 300 60 100 Product 12NC ending 115 135 115 135 315 335 315 215 235 112 412 116 126 115 135 112 112 215 235 115 135 518 551 557 115 135 118 112 115 135 115 118 115 135 118 151 118 115 112 112 112 112 112 135 112 118 Packing method 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch 12 mm tape and reel 12 mm tape and reel 4 tray/box blister, tray 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel 12 mm tape and reel 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack 8 mm tape and reel 8 mm tape and reel 13'' tape and reel tube 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 16 mm tape and reel 8 mm tape and reel 8 mm tape and reel 13" tape and reel 1 tray 12 mm tape and reel 8 mm tape and reel blister, tray blister, tray blister, tray blister, tray blister, tray reel blister, tray reel

SOD523/SC-79

1.2 x 0.8 x 0.6

SOD882T SOT23

1.0 x 0.6 x 0.4 2.9 x 1.3 x 0.9

SOT54

4.6 x 3.9 x 5.1

SOT89/SC-62 SOT115 SOT121B SOT143(N/R) SOT223/SC-73

4.5 x 2.5 x 1.5 44.5 x 13.65 x 20.4 28.45 x 28.45 x 7.27 2.9 x 1.3 x 0.9 6.7 x 3.5 x 1.6

SOT307

10 x 10 x 1.75

SOT323/SC-70 SOT341 SOT343(N/R) SOT343F SOT360 SOT363/SC-88 SOT401 SOT403 SOT416/SC-75 SOT467B SOT467C SOT502A SOT502B

2.0 x 1.25 x 0.9 5.3 x 10.2 2.0 x 1.25 x 0.9 2.1 x 1.25 x 0.7 6.5 x 4.4 x 0.9 2.0 x 1.25 x 0.9 5 x 5 x 1.4 5.0 x 4.4 x 0.9 1.6 x 0.8 x 0.75 9.78 x 18.29 x 4.67 20.45 x 18.54 x 4.67 19.8 x 9.4 x 4.1 19.8 x 9.4 x 4.1

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Package SOT538A SOT539A SOT540A SOT608A

Package dimensions LxWxH 5.1 x 4.1 x 2.6 31.25 x 9.4 x 4.65 21.85 x 10.2 x 5.4 10.1 x 10.1 x 4.2

Packing quantity 160 60 300 60 60 60 300 60 100 300 6,000 1,500 100 6,000 4,000 1,000 490 2,450 1,000 90 450 4,000 1,000 260 260 1,300 2,500 3,000 490 4,000 180 180 5000 5000 6000 60 180 100 180 100 60 60 100 60 100 60 100 60 60 60 100

Product 12NC ending 112 112 135 112 112 112 135 112 118 135 118 115 551 118 118 515 551 157 518 551 557 115 518 151 551 157 118 125 551 518 127 127 115 132 118 112 112 118 112 118 112 112 118 112 118 112 118 112 112 112 118

Packing method blister, tray blister, tray reel blister, tray blister, tray blister, tray reel blister, tray reel reel 12 mm tape and reel 8 mm tape and reel tray Tape and reel 13" tape and reel 7" tape and reel dry pack 1 tray dry pack 5 tray 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack 8 mm tape and reel 13" tape and reel dry pack 1 tray 1 tray dry pack 5 tray dry pack 16 mm tape and reel 8 mm tape and reel tray multiple trays tube tube 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel blister, tray blister, tray Tape and reel blister, tray Tape and reel blister, tray blister, tray reel blister, tray reel blister,tray reel blister, tray blister, tray blister, tray reel NXP Semiconductors RF Manual 14th edition 101

SOT608B

10.1 x 10.1 x 4.2

SOT616 SOT617

4.0 x 4.0 x 0.85 5 x 5 x 0.85

SOT618

6 x 6 x 0.85

SOT638 SOT666

14 x 14 x 1 1.6 x 1.2 x 0.7

SOT684

8 x 8 x 0.85

SOT724 SOT753 SOT778 SOT822-1 SOT834-1 SOT886 SOT891 SOT908 SOT922-1 SOT975B SOT975C SOT979A SOT1110A SOT1121A SOT1121B SOT1130A SOT1130B SOT1135A

8.7 x 3.9 x 1.47 2.9 x 1.5 x 1.0 6.0 x 6.0 x 0.85 15.9 x 11 x 3.6 15.9 x 11 x 3.15 1.45 x 1.0 x 0.5 1.0 x 1.0 x 0.5 3.0 x 3.0 x 0.85 17.4 x 9.4 x 3.88 6.5 x 6.5 x 3.3 6.5 x 6.5 x 3.3 31.25 x 10.2 x 5.3 41.28 x 17.12 x 5.36 34.16 x 19.94 x 4.75 20.70 x 19.94 x 4.75 20.45 x 17.12 x 4.65 9.91 x 17.12 x 4.65 20.45 x 19.94 x 4.65

6.2

Marking codes list

Search online on marking code: http://www.nxp.com/package/ In alphabetical order of marking code In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites. Instead of a ‘%’, you will find: p = made in Hong-Kong t = made in Malaysia W = made in China
Marking code 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 50% 1 2 7 8 9 %1W %3A %4A %5A %6G %6J %6K %6K %6L %6S %6W %6X %6Y %AB %E7 %E8 %E9 %EA %EB %EC %ED %M1 %M2 %M3 %M4 %M5 %M6 Type BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA277 BB182 BA891 BB178 BB179 BAP51-05W BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 BGA7024 PMBF4392 BGA7027 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BF908 BF908R BF909 BF909R BF909A BF909AR Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD523 SOD523 SOD523 SOD523 SOD523 SOT323 SOT89 SOT89 SOT89 SOT23 SOT23 SOT89 SOT23 SOT89 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 Marking code %M7 %M8 %M9 %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MN %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ 1B% 1C% 1N% 2A% 2L 2N 2R 4A 4K% 4L% 4W% 5K% 5W% 6F% 6K% 6W% 7K% 8K% A1 A1 A1 A1 A2 A2 A2 A2 A2% A3 A3 A3 A3% Type BF904A BF904AR BSS83 BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BGA2717 BAP50-05 BAP70-04W BF862 BF1208 BF1206F BF1207F BF1208D BAP64-04 BAP50-04 BAP64-04W BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BAP65-05 BAP70-05 BA591 BB208-02 BGA2001 BAP64Q BAP70Q BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT23 SOT323 SOT23 SOT666 SOT666 SOT666 SOT666 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOD323 SOD523 SOT343 SOT753 SOT753 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 Marking code A5 A5% A6% A7% A8 A8% A8% A9 AC B3 B6B6% B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D1 D2 D2 D3 D3 D4 D4% D5 D6 D7 D8 E1% E1% E1% E2% E2% E3% E6% FB FF FG G2 G2% G3% G4% G5% Type BAP51-03 BGA2011 BGA2012 BFG310W/XR BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGU7005 BGU7003 BGA2715 BFU725F BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BFU610F BFU630F BAP63-03 BFU660F BAP65-03 BFU690F BFR30/B BFU710F BFU730F BFU760F BFU790F BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFG17A BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 Package SOD323 SOT363 SOT363 SOT343 SOD323 SOT343 SOT363 SOD323 SOT886 SOT891 SOT363 SOT343F SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOT343F SOT343F SOD323 SOT343F SOD323 SOT343F SOT23 SOT343F SOT343F SOT343F SOT343F SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT23 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363

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Marking code K1 K2 K4 K5 K6 K7 K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 L8 L9% LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M3% M33 M34 M35 M4% M5% M6% M65 M66 M67 M7% M84 M85 M86 MB MC MD

Type BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 BAP1321-02 BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX BB187LX BF1208 BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BFT46 BF861A BF861B BF861C BF1215 BF1216 BF1205C BF545A BF545B BF545C BF1218 BF556A BF556B BF556C BF998WR BF904WR BF908WR

Package SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD882T SOD882T SOD523 SOT363 SOD882T SOT363 SOD882T SOT363 SOD882T SOD882T SOT363 SOD882T SOD882T SOT363 SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT343 SOT343 SOT343

Marking code ME MF MG MG% MH MH% MK ML MO% MO% N N0 N0% N0% N1 N2 N2% N2% N3 N4 N4 N4% N6% N7 N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6

Type BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998 BF998R BB181 BFR505T BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFG520W BFG520W/X BFQ540 BFS540 BFS25A BFG540W/X BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BFG21W BB131 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W

Package SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143 SOT143 SOD523 SOT416 SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT343 SOT343 SOT89 SOT323 SOT323 SOT343 SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT343 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343

Marking code P7 P8 P9 PB PC PE PF PL R2% R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% SC% SD% SE% T5 V1 V1% V10 V2% V2% V3% V4% V6% V8 VA VB VC VC% VD% W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1%

Type BB147 BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BGU7031             BB201 BGU7032             BGU7033             BFG10W/X BFG25AW/X BFT25 BFT25A BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1217WR          BF1118W             BF1118WR          BF1118                  BF1118R               BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W

Package SOD523 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT23 SOT363 SOT363 SOT343 SOT343 SOT23 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT343 SOT343 SOT343 SOT143 SOT143 SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323

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7. Abbreviations

3-way AM ASIC ASYM BPF BUC CATV CDMA CMMB CMOS CQS DAB DECT DiSEqC DSB DVB EDGE ESD FET FM GaAs GaN Gen GPS GSM HBT HDTV HF HFC HFET HPA HVQFN IF ISM LDMOS LNA LNB LO LPF MESFET MMIC MMPP

Doherty design using 3 discrete transistors Amplitude Modulation Application Specific Integrated Circuit Asymmetrical design of Doherty (main and peak device are different) Band Pass Filter Block Up Converter Community Antenna Television Code Division Multiple Access Chinese Multimedia Mobile Broadcasting Complementary Metal Oxide Semiconductor Customer Qualification Samples Digital Audio Broadcasting Digital Enhanced Cordless Telecommunications Digital Satellite Equipment Control Digital Signal Processor Digital Video Broadcasting Enhanced Data Rates for GSM Evolution Electro Static Device Field Effect Transistor Frequency Modulation Gallium Arsenide Gallium Nitride Generation Global Positioning System Global System for Mobile communications Heterojunction Bipolar Transistor High Definition Television High Frequency (3-30 MHz) Hybrid Fiber Coax Heterostructure Field Effect Transistor High Power Amplifier Plastic thermally enHanced Very thin Quad Flat pack No leads Intermediate Frequency Industrial, Scientific, Medical - reserved frequency bands Laterally Diffused Metal-Oxide-Semiconductor Low Noise Amplifier Low Noise Block Local Oscillator Low Pass Filter Metal Semiconductor Field Effect Transistor Monolithic Microwave Integrated Circuit Main and peak devices realized separately in halves of push pull transistor

MPPM

Main and peak device realized in same push pull transistor (2 times) MoCA Multimedia over Coax Alliance MOSFET Metal–Oxide–Semiconductor Field Effect Transistor MPA Medium Power Amplifier MRI Magnetic resonance imaging NF Noise Figure NIM Network Interface Module NMR Nuclear magnetic resonance PA Power Amplifier PAR Peak to Average Ratio PEP Peak Envelope Power pHEMT pseudomorphic High Electron Mobility Transistor PLL Phase Locked Loop QUBiC Quality BiCMOS RF Radio Frequency RFS Release for Supply RoHS Restriction of Hazardous Substances RX Receive SARFT State Administration for Radio, Film and Television SER Serializer SiGe:C Sillicon Germanium Carbon SMATV Satellite Master Antenna Television SMD Surface Mounted Device SPDT Single Pole, Double Throw SYM Symmetrical design of Doherty (main and peak device are the same type of transistor) TD-SCDMA Time Division-Synchronous Code Division Multiple Access TCAS Traffic Collision Avoidance Systems TMA Tower Mounted Amplifier TTFF Time to first fix TX Transmit UHF Ultra High Frequency (470-860MHz) UMTS Universal Mobile Telecommunications System VCO Voltage Controlled Oscillator VGA Variable Gain Amplifier VHF Very High Frequency (30-300MHz) VoIP Voice over Internet Protocol VSAT Very Small Aperture Terminal WCDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network

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8. Contacts and web links
How to contact your authorized distributor or local NXP representative?

Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist South America: http://www.nxp.com/profile/sales/southamerica_dist

NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP RF power & base stations: http://www.nxp.com/rfpower NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/all_appnotes NXP cross-references: http://www.nxp.com/products/xref NXP green packaging: http://www.nxp.com/green_roadmap NXP end-of-life: http://www.nxp.com/products/eol NXP Quality Handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP packaging: http://www.nxp.com/package NXP sales offices and distributors: http://www.nxp.com/profile/sales NXP High Speed Converters http://www.nxp.com/dataconverters

Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica South America: http://www.nxp.com/profile/sales/southamerica

Web links NXP Semiconductors: http://www.nxp.com NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes

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9. Product index
Type ADC1006S series ADC1010S series ADC1015S series ADC1113D125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series ADC1213D series ADC1215S series ADC1410S series ADC1412D series ADC1413D series ADC1415S series ADC1610S series ADC1613D series BA277 BA591 BA792 BA891 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP51LX BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX BAP64Q BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM BAP70Q BAT17 BAT18 BB131 BB135 BB145B BB148 Portfolio chapter 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.4 3.2.3 3.2.1 3.2.1 3.2.1 3.2.1 Type BB149 BB149A BB152 BB153 BB156 BB178 BB178LX BB179 BB179B BB179BLX BB179LX BB181 BB181LX BB182 BB182LX BB184 BB184LX BB185LX BB187 BB187LX BB189 BB198 BB199 BB201 BB202 BB202LX BB207 BB208-02 BB208-03 BBY40 BF1100 BF1100R BF1100WR BF1101 BF1101R BF1101WR BF1102 BF1105 BF1105R BF1105WR BF1107 BF1108 BF1108R BF1109 BF1109R BF1109WR BF1118 BF1118R BF1118W BF1118WR BF1201 BF1201R BF1201WR BF1202 BF1202R BF1202WR BF1203 BF1204 BF1205 BF1205C BF1206 BF1206 BF1207 BF1208 BF1208D BF1210 BF1211 BF1211R BF1211WR BF1212 BF1212R Portfolio chapter 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2. 3.5.2. 3.5.2. 3.5.2. 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 Type BF1212WR BF1214 BF1215 BF1216 BF1217 BF1218 BF245A BF245B BF245C BF5101) BF5111) BF5121) BF5131) BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BF862 BF904 BF904R BF904WR BF908 BF908R BF908WR BF909 BF909R BF909WR BF991 BF992 BF994S BF996S BF998 BF998R BF998WR BFG10(X) BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505(/X) BFG505W/X BFG520(/X) BFG520W(/X) BFG540(/X) BFG540W(/X/XR) BFG541 BFG590(/X) BFG591 BFG67(/X) BFG92A(/X) BFG93A(/X) BFG94 Portfolio chapter 3.5.2 3.5.2 3.5.2. 3.5.2. 3.5.2. 3.5.2. 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 Type BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ540 BFQ591 BFQ67 BFQ67W BFR106 BFR30 BFR31 BFR505 BFR505T BFR520 BFR520T BFR540 BFR92A BFR92AW BFR93A(R) BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT46 BFT92 BFT92W BFT93 BFT93W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2003 BGA2011 BGA2012 BGA2022 BGA2031/1 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2717 BGA2748 BGA2771 BGA2776 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA6289 BGA6489 BGA6589 Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

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Type BGA7024 BGA7027 BGA7030 BGA7033 BGA7124 BGA7127 BGA7202 BGA7203 BGA7204 BGA7350 BGA7351 BGD502 BGD702 BGD702N BGD704 BGD712 BGD712C BGD714 BGD802 BGD804 BGD812 BGD814 BGD816L BGD885 BGE787B BGE788 BGE788C BGE885 BGM1011 BGM1012 BGM1013 BGM1014 BGO807 BGO807/FC0 BGO807/SC0 BGO807C BGO807C/FC0 BGO807C/SC0 BGO807CE BGO827 BGO827/SC0 BGU7003 BGU7005 BGU7006 BGU7007 BGU7031 BGU7032 BGU7033 BGY1085A BGY585A BGY587 BGY587B BGY588C BGY588N BGY66B BGY67 BGY67A BGY68 BGY685A BGY687 BGY785A BGY787 BGY835C BGY883 BGY885A BGY887 BGY887B BGY888 BLA6H0912-500 BLA6H1011-600 BLD6G21L-50

Portfolio chapter 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.4.1 3.4.1 3.4.1 3.4.1 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.1 3.6.1 3.6.1 3.6.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.7.3 3.7.3 3.7.1

Type BLD6G21LS-50 BLD6G22L-50 BLD6G22LS-50 BLF571 BLF573 BLF573 BLF573S BLF574 BLF578 BLF645 BLF6G07L(S)-260PBM BLF6G10-135RN BLF6G10-160RN BLF6G10-200RN BLF6G10-45 BLF6G10L(S)-260PRN BLF6G10L(S)-40BRN BLF6G10LS-135RN BLF6G10LS-160RN BLF6G10LS-200RN BLF6G10S-45 BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BLF6G20-40 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-45 BLF6G21-10G BLF6G22-180PN BLF6G22-180RN BLF6G22-45 BLF6G22LS-100 BLF6G22LS-130 BLF6G22LS-180RN BLF6G22LS-75 BLF6G22S-45 BLF6G27-10 BLF6G27-10G BLF6G27-135 BLF6G27-45 BLF6G27-75 BLF6G27L(S)-45BN BLF6G27LS-135 BLF6G27LS-75 BLF6G27S-45 BLF6G38-10 BLF6G38-100 BLF6G38-10G BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6G38S-25 BLF7G20L(S)-200 BLF7G20L(S)-250P BLF7G20L(S)-300P BLF7G22L-130 BLF7G22L(S)-250P BLF7G22LS-130 BLF7G24L(S)-100(G) BLF7G27L-200P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF7G27L(S)-75P BLF7G27LS-200P

Portfolio chapter 3.7.1 3.7.1 3.7.1 3.7.2 3.7.2 3.7.2.1 3.7.2 3.7.2 3.7.2 3.7.2 3.7.1.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1.1 3.7.1.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1.4 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1.2 3.7.1.2 3.7.1.2 3.7.1 3.7.1.3 3.7.1 3.7.1.4 3.7.1 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1

Type BLF871 BLF871S BLF878 BLF881 BLF888 BLF888A(S) BLL6H0514-25 BLL6H1214-500 BLM6G10-30 BLM6G10-30G BLM6G22-30 BLM6G22-30G BLS6G2731-120 BLS6G2731-6G BLS6G2731S-120 BLS6G2933P-200 BLS6G2933S-130 BLS6G3135-120 BLS6G3135-20 BLS6G3135S-120 BLS6G3135S-20 BLS7G2729-300P BLS7G2729S-300 BLT50 BLT70 BLT80 BLT81 BSR56 BSR57 BSR58 BSS83 CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi CGD914 CGD923 CGD942C CGD944C CGY1032 CGY1041 CGY1043 CGY1049 CGY887A CGY887B CGY888C DAC1001D125 DAC1003D160 DAC1005D series DAC1008D series DAC1201D125 DAC1203D160 DAC1205D series DAC1208D series DAC1401D125 DAC1403D160 DAC1405D series DAC1408D series J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 OM7650

Portfolio chapter 3.7.2 3.7.2 3.7.2 3.7.2 3.7.2 3.7.2 3.7.3 3.7.3 3.7.1 3.7.1 3.7.1 3.7.1 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.5.1 3.5.2 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.6.2

Type OM7670 PBR941 PBR951 PMBD353 PMBD354 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1003HN TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN

Portfolio chapter 3.6.2 3.3.1 3.3.1 3.2.4 3.2.4 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2

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Notes

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Notes

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© 2010 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: May 2010 Document order number: 9397 750 16881 Printed in the Netherlands

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