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01 Power Electronics

01 Power Electronics

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Published by Nishanth Datta

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Published by: Nishanth Datta on Mar 15, 2011
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DC gain FE

h

[ ]

C

CE

B

I

V

I

β =

: Gain is dependent on temperature. A high gain would reduce

the values of forced

( )

& CE sat

V

β

.

( )

CE sat

V

: A low value of ( )

CE sat

V

will reduce the on-state losses. ( )

CE sat

V

is a function of the
collector circuit, base current, current gain and junction temperature. A small value of
forced β decreases the value of ( )

CE sat

V

.

( )

BE sat

V

: A low value of ( )

BE sat

V

will decrease the power loss in the base emitter junction.

( )

BE sat

V

increases with collector current and forced β.

Turn-on time on

t: The turn-on time can be decreased by increasing the base drive for a
fixed value of collector current. dt is dependent on input capacitance does not change
significantly with C

I. However tr increases with increase in C

I.

Turn off time off

t: The storage time ts is dependent on over drive factor and does not
change significantly with IC. tf is a function of capacitance and increases with IC. &

s f

t t

59

can be reduced by providing negative base drive during turn-off. f

tis less sensitive to

negative base drive.

Cross-over Ct: The crossover time Ct is defined as the interval during which the collector
voltage CE

Vrises from 10% of its peak off state value and collector current. C

I falls to

10% of its on-state value. Ct is a function of collector current negative base drive.

60

Switching Limits

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