BASICS of Metal Oxide Semiconductor Structures

EEC7102: Electronic Devices & Technology

Internal Assessment

Assignment

Submitted by

Sricharan Ch

M.Tech

Electronics Engineering

Course Instructor:

Samundeswari, M.Tech(Phd).

Dept. of Electronics Engineering

 BASICS OF MOS
MOS SURFACES

Generally, semiconductors belong to that category of materials which exhibit

conductivity at some particular conditions. MOS Surfaces are the semiconductor surfaces which
can be either of the p – type or n – type depending upon the type of doping.

MOS STRUCTURES

MOS structures employ MOS Diode as its basic element. The MOS diode can be thought
of as Capacitance under certain conditions which is called as MOS Capacitor. These can be
categorised into two categories : Ideal and Real depending upon the conditions we assume.

MOS Capacitor – Ideal

 Introduction
 Basic bias conditions of MOS capacitor:

S
ource: Above page, Drain: Below page, Gate: Metal Gate
Fermi levels are different in M and S.
Fermi levels are constant within M and within S

Majority-carrier concentration p(x) increases near surface => Accumulation

Surface potential = ϕs
where
Beyond the onset of strong inversion, electrons are induced into the electron channel.
The depletion layer thickness does not increase further, i.e. WD = WD, max.
 Illustration of band diagram, charge, field, and potential of ideal MOS capacitor:

We use the Depletion Approximation for the acceptor charge in the semiconductor

 Threshold voltage of Ideal MOS Capacitor:

Thus the threshold voltage is the sum of a voltage drop in the oxide and in the semiconductor at
the onset of strong inversion. Eqn. (26) applies to the ideal MOS structure.

 Capacitance of Ideal MOS Capacitor:

CV Curve for Ideal MOS Capacitor:

MOS capacitor – Real
We calculated the threshold voltage of the ideal MOS capacitor. It was given by:

CV curve for Real MOS Capacitor: The various CV Plots for MOS capacitor using different
materials is shown below.

References:
1. Semiconductor Devices Physics & Technology, S.M. Sze – Pg. no: 170 – 179.
2. ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert : Chapter 32 – page
1 – 12.
3. ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert : Chapter 33 – page
1 – 3.