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EDC k Lal Kishore

EDC k Lal Kishore


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Published by mohana sundaram

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Published by: mohana sundaram on Apr 25, 2011
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Because of the battery connected as shown, holes in ( Fig. 2.16 (b)) p-rype and electrons in n-
will move away from the junction. As the holes near the junction in p-region they will move
away from the junction and negative charge spreads towards the left of the junction. Positive
charge density spreads towards right. But this process cannot continue indefinitely, because to
have continuous flow of holes from right to left, the holes must come from the n-side. But n-side
has few holes. So very less current results. But some electron hole pairs are generated because
of thermal agitation. The newly generated holes on the n-side will move towards junction. Electrons
created on the p-side will move towards the junction. So there results some small current called
Reverse Saturation Current. It is denoted by 1

0, 10 will increase with the temperature. So the
reverse resistance or back resistance decreases with temperature. 10 is of the order of a few

~A. The reverse resistance of a diode will be of the order of Mil For ideal diode, reverse

resistance is 00.

I he same thing can be explained in a different way. When the diode is open circuited, there
exists a barrier potential. Jfthe diode is reverse biased, the barrier potential height increases by
a magnitude depending upon the reverse bias voltage. So the flow of holes from p-side to n-side
and electrons from n-side to p-side is restricted. But this barrier doesn't apply to the minority
carriers on the p-sides and n-sides. The flow ofthe minority carriers across the junction results
in some current.

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