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IHW15N120R2

IHW15N120R2

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Published by: rohimanipal on May 28, 2011
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01/02/2013

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IHW15N120R2

Soft Switching Series

Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW15N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Mounting Torque Ptot Tj Tstg Ms IFpul s IFSM Symbol VCE IC Value 1200 30 15 45 45 30 15 45 50 130 120 ±20 ±25 357 -40...+175 -55...+175 260 0.6 Nm W °C V Unit V A VCE 1200V IC 15A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking H15R1202 Package PG-TO-247-3-21
C

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E

PG-TO-247-3-21

ICpul s IF

VGE

1

J-STD-020 and JESD-022 1 Rev. 1.2 May 06

Power Semiconductors

VCE=VGE V C E = 12 0 0V .2 May 06 . I F = 1 5 A T j =2 5 °C T j =1 2 5° C T j =1 7 5° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0.65 6. at Tj = 25 °C. 1.4 µA 1. unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V .5 1. I C = 15 A T j =2 5 °C T j =1 2 5° C T j =1 7 5° C Diode forward voltage VF V G E = 0V .IHW15N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance.47 RthJC 0. junction – case Diode thermal resistance. typ. V G E = 0V T j =2 5 °C T j =1 7 5° C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V .8 1.45 1.1 1. Unit RthJA 40 RthJCD 0. Value Unit Power Semiconductors 2 Rev.8 1.55 1.7 none 5 2500 100 nA S Ω 5. junction – ambient Electrical Characteristic. V G E =2 0 V V C E = 20 V . max.7 1.52 K/W Symbol Conditions Max.75 1200 V Symbol Conditions Value min.6 5. 4m A. I C = 15 A 11. I C = 5 00 µA VCE(sat) V G E = 15 V . junction – case Thermal resistance.

V G E = 0 / 15 V .3 1. typ. at Tj=25 °C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-off energy Total switching energy td(off) tf Eoff Ets T j =2 5 °C . Unit Switching Characteristic. V G E = 0V . 2) L σ =2 3 0n H .197 in. I C = 1 5 A V G E = 0 /1 5 V. typ.) from case Ciss Coss Crss QGate LE V C E = 25 V . R G = 1 4. at Tj=175 °C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-off energy Total switching energy td(off) tf Eoff Ets T j =1 7 5° C V C C = 60 0 V. f= 1 MH z V C C = 96 0 V.IHW15N120R2 Soft Switching Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0. Inductive Load.2 May 06 Power Semiconductors .9 0. 2) C σ = 3 9p F 282 62 0. 2) C σ =3 9 pF 342 90 1. max.9 Symbol Conditions Value min. 3 Rev. max. V C C = 60 0 V.3 Symbol Conditions Value min. I C = 1 5 A. 2) L σ =2 3 0n H. I C =1 5 A V G E = 15 V 13 nH 1530 49 39 133 nC pF Switching Characteristic. 8Ω . 1. 8Ω. Inductive Load. R G = 14 . Unit 2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Collector current as a function of switching frequency for hard switching (turn-off) (Tj ≤ 175°C.IHW15N120R2 Soft Switching Series tp=1µs 10µs 40A TC=80°C TC=110°C IC.8Ω) VCE. COLLECTOR CURRENT 10A 50µs 20A Ic 10A 200µs 1A 1ms 10ms 0A 10Hz DC 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f. CASE TEMPERATURE Figure 4. Tj ≤ 175°C) Power Semiconductors 4 Rev. TC = 25°C. VGE = 0/+15V.5. Power dissipation as a function of case temperature (Tj ≤ 175°C) TC. DC Collector current as a function of case temperature (VGE ≥ 15V. Tj ≤175°C. DISSIPATED POWER 20A 100W 10A 50W 0W 25°C 0A 25°C 50°C 75°C 100°C 125°C 150°C TC. RG = 14. 1.2 May 06 .VGE=15V) 250W 30A 200W 150W IC. COLLECTOR-EMITTER VOLTAGE Figure 2. SWITCHING FREQUENCY Figure 1. IGBT Safe operating area (D = 0. CASE TEMPERATURE Figure 3. COLLECTOR CURRENT 30A IC. COLLECTOR CURRENT 50°C 75°C 100°C 125°C 150°C Ptot. D = 0. VCE = 600V.

5V IC=30A IC.5A 20A 1. Typical output characteristic (Tj = 175°C) VCE(sat). COLLECTOR CURRENT 30A IC. JUNCTION TEMPERATURE Figure 8. GATE-EMITTER VOLTAGE Figure 7.5V 0A 0V 2V 4V 6V 8V 10V 0. COLLECTOR-EMITTER VOLTAGE Figure 5.5V IC=7.0V 10A 0. COLLECTOR-EMITTER VOLTAGE Figure 6. Typical transfer characteristic (VCE=20V) TJ. COLLECTOR CURRENT 15V 30A 13V 11V 9V 20A 7V 10A 10A 0A 0V 1V 2V 0A 0V 1V 2V 3V VCE.IHW15N120R2 Soft Switching Series 40A VGE=20V 15V 13V 11V 20A 9V 7V 40A VGE=20V IC.2 May 06 . COLLECTOR-EMITT SATURATION VOLTAGE 40A TJ=175°C 2.0V IC=15A 1.0V -50°C 0°C 50°C 100°C 150°C VGE. Typical collector-emitter saturation voltage as a function of junction temperature (VGE =15V) Power Semiconductors 5 Rev. 1. COLLECTOR CURRENT 30A 25°C 2. Typical output characteristic (Tj = 25°C) VCE.

4V t.4mA) Power Semiconductors 6 Rev. SWITCHING TIMES 100ns tf min. VCE=600V. JUNCTION TEMPERATURE Figure 12. GATE RESISTOR Figure 10. VCE=600V. VGE=0/15V. COLLECTOR CURRENT Figure 9. Typical switching times as a function of junction temperature (inductive load.IHW15N120R2 Soft Switching Series td(off) td(off) t. 1. Typical switching times as a function of gate resistor (inductive load. SWITCHING TIMES 100ns tf t. 3V 10ns 25°C 50°C 75°C 100°C 125°C 150°C 2V -50°C 0°C 50°C 100°C TJ. VCE=600V. 5V typ. RG=14. Gate-emitter threshold voltage as a function of junction temperature (IC = 0. SWITCHING TIMES 100ns tf 10ns 10ns 0A 10A 20A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω IC.8Ω. JUNCTION TEMPERATURE Figure 11. VGE=0/15V. RG=14. TJ=175°C. Dynamic test circuit in Figure E) td(off) VGE(th). GATE-EMITT TRSHOLD VOLTAGE 6V max. TJ=175°C. Typical switching times as a function of collector current (inductive load. VGE=0/15V. IC=15A.2 May 06 .8Ω. Dynamic test circuit in Figure E) TJ. IC=15A. Dynamic test circuit in Figure E) RG.

0mJ 0. VCE=600V. Dynamic test circuit in Figure E) VCE. IC=15A.5mJ Eoff E.3mJ 1. JUNCTION TEMPERATURE Figure 15.0mJ 0. TJ=175°C. SWITCHING ENERGY LOSSES 1.2 May 06 . SWITCHING ENERGY LOSSES 2. TJ=175°C. SWITCHING ENERGY LOSSES E.0mJ 1. VGE=0/15V.5mJ 0. Typical turn-off energy as a function of gate resistor (inductive load. VCE=600V.4mJ 0. Typical turn-off energy as a function of junction temperature (inductive load. SWITCHING ENERGY LOSSES 1.IHW15N120R2 Soft Switching Series 1. COLLECTOR-EMITTER VOLTAGE Figure 16. RG=14. RG=14. VCE=600V.5mJ 1.3mJ 0. VGE=0/15V.2mJ 0. Dynamic test circuit in Figure E) Power Semiconductors 7 Rev.0mJ 0.5mJ 50°C 75°C 100°C 125°C 150°C 0. Typical turn-off energy as a function of collector current (inductive load.8Ω.0mJ 400V 500V 600V 700V 800V 900V TJ. Dynamic test circuit in Figure E) 1. COLLECTOR CURRENT Figure 13. Dynamic test circuit in Figure E) RG. Typical turn-off energy as a function of collector emitter voltage (inductive load.0mJ Eoff 1.2mJ 1.8Ω. RG=14. 1.0mJ 0.5mJ 1.8mJ 0.8Ω.6mJ 0.0mJ 25°C Eoff E. GATE RESISTOR Figure 14.0mJ 0A 5A 10A 15A 20A 25A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω IC. TJ=175°C.8mJ Eoff E. IC=15A. IC=15A.5mJ 0. VGE=0/15V. VGE=0/15V.8mJ 0.

05 0.01 single pulse R.5 ZthJC.0198 R1 τ. 1. GATE-EMITTER VOLTAGE 10V c.1517 0. (s) 9.1092 0.IHW15N120R2 Soft Switching Series 15V 1nF 240V 960V Ciss VGE. Typical capacitance as a function of collector-emitter voltage (VGE=0V. GATE CHARGE Figure 17. CAPACITANCE 100pF Coss Crss 5V 0V 10pF 0nC 50nC 100nC 150nC 200nC 0V 10V 20V QGE.37*10-2 1.41*10-2 8.58*10-4 3. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 8 Rev.02 0. PULSE WIDTH Figure 19.(K/W) 0.05 0.0861 0.5 0. IGBT transient thermal resistance (D = tp / T) tP.(K/W) 0.2 May 06 . f = 1 MHz) ZthJC. TRANSIENT THERMAL RESISTANCE D=0. (s) 7. TRANSIENT THERMAL RESISTANCE D=0.77*10-3 5. Typical gate charge (IC=15 A) VCE.81*10-5 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 10 K/W -2 10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms tP.1372 0. PULSE WIDTH Figure 20.1148 0.0454 R1 τ.02 0.1 0.01 single pulse 10 K/W -2 -1 10 K/W -1 0.03*10-3 1. COLLECTOR-EMITTER VOLTAGE Figure 18.1 0.15*10-4 R2 R.20*10-2 1.2 0.1702 0.2 10 K/W 0.

5V 7. 1.5A 1.IHW15N120R2 Soft Switching Series IF=30A 40A 35A 2.0V 0.5V 2. FORWARD VOLTAGE Figure 21.5V 1. FORWARD CURRENT 30A 25A 20A 15A 10A 5A 0A TJ=25°C 175°C 1. FORWARD VOLTAGE IF.0V 0°C 50°C 100°C 150°C VF.5V 0.2 May 06 . Typical diode forward current as a function of forward voltage TJ. Typical diode forward voltage as a function of junction temperature Power Semiconductors 9 Rev.0V 1.0V 0.0V 0. JUNCTION TEMPERATURE Figure 22.0V 15A VF.

IHW15N120R2 Soft Switching Series PG-TO247-3-21 Power Semiconductors 10 Rev.2 May 06 . 1.

Definition of switching losses Figure E. Definition of diodes switching characteristics τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn Figure A.v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. 1. Definition of switching times TC Figure D.2 May 06 .IHW15N120R2 Soft Switching Series i. Thermal equivalent circuit Figure B. Power Semiconductors 11 Rev. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =39pF.

IHW15N120R2 Soft Switching Series Power Semiconductors 12 Rev.2 May 06 . 1.

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