Section: A

1) Explain what is meant by the �cut-off� wavelength of a photo detector. (2 marks)

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Marks : 2 2) Explain why silicon is not a suitable material to fabricate the photo detector in to detect infra-red light with a wavelength of 1.5um upwards? Can you recommend a suitable material for it? Justify your selection. (2 marks)

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Marks : 2 3) Which of the following statement(s) is/are TRUE? a b c Light emitted from a LED is mainly caused by the recombination of thermally generated carriers drifting across a PN junction. Photo detectors must only be fabricated using direct band-gap semiconductors. Junctions in a LED are normally formed in a direct band-gap semiconductor so that recombination of carriers will result in efficient photon production.

c = 3 x 10^8 m/s).s. (2 marks) Character limit : 100 0 word(s) entered Marks : 2 5) Why is it that short wavelength photons are not as efficiently detected by a photo detector? (2 marks) Character limit : 100 0 word(s) entered Marks : 2 Submit this quiz using the Submit button on the right panel . Marks : 2 4) What is the maximum band gap energy of a material that would make it suitable to detect infra-red light with a wavelength of 1.135 x 10 ^� 15 eV. It is mandatory for a PN junction to be in forward bias before it could be used as a photo detector.5um upwards? (h = 4.d e The colour of light emitted by a LED does not depend on the band gap of the semiconductor material so long as we can operate the LED in forward bias.

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