# DEPARTMENT OF ELECTRONICS AND COMMUNICATION QUESTION BANK

SUBJECT CODE : EC2403

SEM / YEAR : VII/ IV

RF AND MICROWAVE ENGINEERING UNIT I TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION

PART ± A ( 2 MARKS) 1. Write the properties of RF / MW. 2. Write the disadvantages of RF / MW. 3. List the applications of RF / MW. 4. Write the RF spectrum band. 5. What is Skin effect? 6. Write the expression for skin depth. 7. Given the diameter of AWG 50 is 1.0 mil. What is the diameter of AWG 14? 8. Draw the equivalent circuit of resistor at RF / MW. 9. Draw the equivalent circuit of capacitor at RF / MW. 10. Define Q. 11. List the applications of inductor in RF circuits. 12. What are the different methods to extend the frequency range of inductor? 13. Define a two port network. 14. Define impedance parameter. 15. Define admittance parameter. 16. Define h parameter. 17. What is the other name of ABCD parameter define it. 18. Define S ± parameter. 19. What is T ± parameter? 20. Define a reciprocal network. 21. State Reciprocity Theorem. 22. What is symmetrical reciprocal network? 23. Define lossless network. 24. State the unity property of S matrix. 25. State the zero property of S matrix. 26. What is Unitary matrix? PART B (16 Marks) 1. Explain in detail the various applications of RF / MW. 2. With neat diagrams explain in detail RF / MW versus DC or low AC signals. 3. Explain in detail the properties of wire and resistor at RF 4. Explain in detail the properties of capacitor at RF. 5. Explain in detail the properties of inductor at RF 6. Explain in detail the various types of low frequency parameters. 7. Explain the formulation of S ± parameters. 8. Explain in detail the different properties of S ± parameter. 9. Explain about transition matrix. 10. Explain the analysis of reciprocal lossless network.

Assume Z0 = 50 ohms and the operating frequency of f = 2 GHz. design all possible configurations of discrete two element matching network that matches the source impedance ZS = (50 +j25 ) ohms to the load ZL = ( 25 . Draw the different types of two component network or L section networks. Using smith chart. Draw the general topology of a T type matching network.UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS PART ± A ( 2 MARKS) Draw the generic amplifier system. 2. 17. For a load impedance of ZL = ( 60 ± j45 ) ohms. Define forbidden region. 5. What is the need for matching networks? Explain in detail about single stub matching. Derive the expression for the stability factor of an amplifier.j 50 ) ohms. State Maximum power transfer theorem. 19. The output impedance of a transmitter operating at a frequency of 2 GHz is ZT = (150 +j75) ohms. 5. Define loaded Q 20. What is the main drawback of single stub matching network? 16. What is the relation between nodal quality factor and loaded quality factor? 14. What are the key amplifier parameters? Define Transducer Power Gain. Write the expression for unilateral figure of merit. What is matching network? Mention the different functions of matching network. Write the expression for the stability factor of an amplifier. Compute the values for the matching network components. Design a R ± type matching network that transforms a load impedance ZL = ( 60 ± j30) ohms into a Zin = ( 10 + j20 ) ohms input impedance and that has a maximum nodal quality factor of 3. Derive the amplifier power relations. Draw the two topologies of single stub matching networks. Draw an Pi matching network configuration 1. 11. Mention the different noise parameters in transistors. 15. Assume f = 2. 2. Write the general procedure for designing an L ± section matching network using smith chart. 8. 3. What is the need for matching network 18. . design two single stub matching networks that transform the load to a Zin = ( 75 + j90 ) ohms input impedance. 9. Draw the forbidden regions for the different L ± section matching network for the source impedance of 50 ohms. 8. 10. 9. Design a Pi matching network that transforms a load impedance of ZL = (10 ± j10) ohms into an input impedance of Zin = ( 20 + j 40 ) ohms. 3. With an example explain about the double stub matching network.4 GHz. 12. 6. Design an L ± section matching network such that maximum power is delivered to antenna whose input impedance is ZA = ( 75 +j15 ) ohms. 6. Write the expression for the length of open and short circuit stub. assuming that the matching is required at f = 1 GHz. 7. 4. PART ± B ( 16 MARKS ) 1. 7. 4. 10. 13.

State the unitary property of Scattering matrix? 21. What is the principle of Microwave phase shifter? 27. 4. Describe the concept of N port scattering matrix representation. 24. Explain in detail about Attenuator and circulator? 5. Give some examples of ferrite devices? 23. Give the S-matrix of H-plane Tee 14. 13. Why is S-matrix used in MW analysis? 6. List two microwave devices using faraday rotation principles. What are the properties of scattering matrix for a lossless junction? 30. 9. Why isolators are called uniline? 28. Derive the S-matrices for magic tee? 3. Name some wave guide components used to change the direction of the guide. Give the S-matrix of Magic Tee 15. PART ± A ( 2 MARKS) State the properties of S matrix? What is ABCD matrix? What are the advantages of ABCD matrix? Define S -matrix? .Assume Z0 = 75 ohms UNIT III MICROWAVE PASSIVE COMPONENTS 1. 5. Difference between Isolator and Circulator? 8. Explain in detail about Isolator and Faraday rotation of Isolator? 7. 2. What are nonreciprocal devices? Give two examples 19. Give the properties of impedance [x]&admittance[y] matrix? 7.? 4. Derive the S-matrix for E-plane and H-plane tee using S parameter theory. Explain the concept of phase shifters? 6. Explain the operation of Directional coupler and its types. Derive the S ± matrix of it. What are the different types of Directional coupler? 18. What are ferrites and give its properties? 22. Explain the concept of circulator and derive the s-matrices for Three port and four port circulator? 8. What is transmission matrix? PART B (16 Marks) 1. Give the S-matrix of E-plane Tee. What are junctions? Give some examples? 11. What is hybrid ring? What is the other name of it? 16. What is Faraday¶s rotation law? 25. What is the principle of Microwave phase shifter? 10. 3. What is Tee junction? Give two examples 12. Give some coupling parameters of directional coupler? 20. Explain in detail the S matrix formulation of two port network and its properties.? 2. 17. What is Gyrator? 26. Give the applications of directional coupler 9. Give the applications of directional coupler. 29.

10. What is the basic difference between IMPATT and TRAPATT diodes? 9. construction and application of IMPATT diode aided by various diagrams. 5. construction and application of TRAPATT. State square law of diode. What is Gunn effect? Explain this phenomenon using two-valley theory. What¶s Gunn effect? 3. 29. How negative resistance is achieved in IMPATT? 4. What is negative resistance in gunn diode? 19. Explain several modes of operation of Gunn diode with the keep of sketches. What are the applications of Gunn Diode? 14. Give advantages and disadvantages of IMPATT diode. 16. 30. UNIT IV MICROWAVE SEMICONDUCTOR DEVICES PART ± A ( 2 MARKS) 1. 3. What are the applications of TRAPATT devices? 12. 6. What is idler circuit and idler frequency? 28. Explain the operation . What are the elements that exhibit Gunn effect? 13. What is Avalanche transit time Devices? 7. Write the ideal characteristics of substrate and conductor materials.Explain stable amplification mode. Mention some properties resistive and dielectric materials. 4. What is the operating frequency of TRAPATT devices? 11. corners bends and twists. What is the effect of transit time? 10. Explain plasma formation in TRAPATT diode 18. What are the various modes of transferred electron oscillators? 22. What are time parameter for TED¶S 21. 2. With its V-I characteristic. What is meant by degenerate parametric amplifier? 26. What is the basic difference between IMTT and TRAPATT diodes? 32. What is parametric devices? Explain the working of a parametric up and down converter? 31. PART ± B (16 MARKS) 1. Compare transistors and Transfer Electron Devices (TED¶S). 23. Which diode exhibits this law? 2. Give the Manley Rowe power relation and mention its application. 8. What are the factors reducing efficiency of IMPATT diode? 17. Write notes on the following: Rat Race . 25. What is negative resistance? 15. What is Transferred electron effect? 20. What is the condition for parametric up converter and down converter? 27. Explain the operation . . What is the basic difference between IMPATT and TRAPATT diode . 5. List the type of circuit used for IMPATT diode circuits. List advantages of using Gunn diodes over IMPATT diodes. Write the advantages of MMICs over discrete circuits. What is parametric amplifier? 24.

10. What is calorimeter? 26. 7. What are tunable detector? 21. UNIT V MICROWAVE TUBES AND MEASUREMENTS PART ± A ( 2 MARKS) What are the high frequency effects in conventional tubes? What are the assumptions for calculation of RF power in Reflex Klystron? Give the drawbacks of klystron amplifiers. What are microwave detector? 19. Explain the operation characteristics and applications of microwave BJTs.6. What is BWO? State the applications of BWO. What is slotted section with line carriage? 22. 2. Compare TWTA and Klystron amplifier 13. Define insertion loss? 28. What is drift space? 12. 3. Define Transit time in Reflex klystron. Explain the operation characteristics and applications of microwave FETs. State the applications of magnetrons. 7. 14. What are the basic materials used in MMIC and mention its properties. Derive the Manley ± Rowe power relations. Differentiate baretter and thermistor? 20. What are the applications of reflex klystron ? What is the purpose of slow wave structures used in TWT amplifiers? How are spurious oscillations generated in TWT amplifier? State the method to suppress it. 5. Explain in detail MMIC fabrication techniques. How will you determine the VSWR and return loss in reflectometer method? 29. 8. 12. Mention the disadvantages of single bridge circuit ? 27. State the applications of TWT. 8. Describe the principle and operation of Varactor and Step recovery diodes. What are the principal limitations of conventional negative grid electron tubes? 17. What is frequency pulling and frequency pushing in magnetrons? 18. 4. How do you measure microwave frequency? . why magnetron is called as cross filed device? 15. 16. 11. 6. What is CFA? State the applications of CFA. 13. What is the main purpose of slotted section with line carriage? 23. What do you mean by O-type tubes? Name some O-type tubes. List the different types of Impedance measurement methods? 1. 11. 30. What is Bolometer? 25. How the klystron amplifier can act as klystron oscillator? What are the applications of klystron amplifier? 9. What is a VSWR meter? 24. 10. Explain the Principle and operation of tunnel diodes.

Explain with block diagram how the wavelength of an unknown microwave signal is measured. Derive the expressions for bunched beam current and efficiency of reflex klystron. 6. 9. 5. Explain about TWT amplifiers..Explain in detail about 2-cavity klystron amplifier. Explain about magnetron oscillator and derive the Hull cut off condition . . Explain in detail the principle of operation of multi cavity klystron. 3. 10. Describe with neat sketch the constructional details and principle of operation of a reflex klystron tube.Explain about the measurement of power.PART ± B ( 16 MARKS ) 1. Write down RWH theory of gunn diode. 4. 7. 2. 11. Explain in detail the measurement of load impedance through slotted line method. 8. Explain about the measurement of SWR. 12. Explain about the measurement of Q and describe a technique of measuring the Phase shift provided by the network.