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• AZ 5214 is a special photoresist which can be used both in positive and negative tone. • Parameters Involved :
1. 2. 3. 4. 5 6. Prebake temperature and time. Spin coat speed and time. First exposure time and intensity. Reversal bake temperature and time. Flood exposure time.
Developing solution strength and time.
• Standard cleaning of wafers with Acetone, IPA and DI water. • Spin coat the Si/SiO2 wafer with AZ 5214 at ~ 4000 rpms for 45 seconds ~1.4um thick resist. • Prebake/Softbake around 90-100C for 60 seconds to remove the solvent (makes the resist photosensitive).
AZ 5214 Photoresist (1.4 micron)
Opaque Metal on Mask UV Radiation Glass Mask Exposure Post Exposure Bake (PEB) • This is the most critical step since it is responsible for ‘image reversal’. • The exposed photoresist cross-links on PEB at 110-120 C for 30 seconds and loses its photosensitivity (see menu).Expose to UV light at an intensity 10 mW/cm2 Cl2 405nm for ~ 10.20 s (hard pressure contact). Exposed Photoresist Cross links on PEB Unexposed Photoresist Unaffected by PEB Si .
Spin-coat AZ5214 photoresist at 4000 rpm for 45s . UV Si Si Cross linked photoresist Previously unexposed After Development The wafer is then immersed in developer for approximately one minute to remove the photoresist. Si Si Typical times for this negative reversal process are as follows: 1.or 1:4 AZ400K). Clean the film surface. 2.Flood Exposure & Develop • • Flood Expose (~ 120 seconds) 10mw/cm2 makes previously unexposed areas soluble to developer solution (1:5 Microposit 351.
8.60 sec (still 405 nm. Rinse with deionized H2O. Flood expose without mask for 40 . . Bake at 115 C for 2 min. Develop in AZ400K solution (4H2O:1AZ400K) for 1 min. 9. Bake at 105 C for 30 sec. Soft bake at 95 C for 60 sec. Expose at 10 milli-watt/cm2 with UV light (405 nm.3. 5. Cl2). 7. 6. Cl2) for 15 sec. 4.