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NIKO-SEM

N-Channel Logic Level Enhancement


Mode Field Effect Transistor

P2804BDG
TO-252 (DPAK) Lead-Free

D
PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE

G S

ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation TC = 25 C TC = 100 C Operating Junction & Storage Temperature Range Lead Temperature ( /16 from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2 1

SYMBOL VDS VGS

LIMITS 40 20 10 8 40 32 22 -55 to 150 275

UNITS V V

TC = 25 C TC = 100 C

ID IDM PD Tj, Tstg TL

SYMBOL RJc RJA

TYPICAL

MAXIMUM 3 75

UNITS C / W C / W

Pulse width limited by maximum junction temperature. Duty cycle 1

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 C VDS = 10V, VGS = 10V 40 40 1 1.5 2.5 250 1 10 nA A A V LIMITS UNIT MIN TYP MAX

AUG-19-2004

NIKO-SEM

N-Channel Logic Level Enhancement


Mode Field Effect Transistor

P2804BDG
TO-252 (DPAK) Lead-Free

Drain-Source On-State Resistance1 Forward Transconductance1

RDS(ON) gfs

VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A VDS = 10V, ID = 10A DYNAMIC

30 21 19

42 28

m S

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2

Ciss Coss Crss Qg Qgs Qgd


2

790 VGS = 0V, VDS = 10V, f = 1MHz 175 65 16 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A 2.5 2.1 2.2 VDS = 20V, RL = 1 ID 1A, VGS = 10V, RGEN = 6 7.5 11.8 3.7 4.4 15 21.3 7.4 nS nC pF

Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2

td(on) tr td(off) tf

Turn-Off Delay Time2 Fall Time2

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge
1 2

IS ISM VSD trr Qrr IS = IS, VGS = 0V IF = 5 A, dlF/dt = 100A / S 15.5 7.9

1.3 2.6 1

A V nS nC

Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH P2804BDG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

AUG-19-2004

NIKO-SEM

N-Channel Logic Level Enhancement


Mode Field Effect Transistor

P2804BDG
TO-252 (DPAK) Lead-Free

TYPICAL PERFORMANCE CHARACTERISTICS

Body Diode Forward Voltage Variation with Source Current and Temperature
100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125 C

25 C

0.1

-55 C

0.01

0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4

AUG-19-2004

NIKO-SEM

N-Channel Logic Level Enhancement


Mode Field Effect Transistor

P2804BDG
TO-252 (DPAK) Lead-Free

AUG-19-2004

NIKO-SEM

N-Channel Logic Level Enhancement


Mode Field Effect Transistor

P2804BDG
TO-252 (DPAK) Lead-Free

TO-252 (DPAK) MECHANICAL DATA


mm Dimension Min. A B C D E F G 9.35 2.2 0.45 0.89 0.45 0.03 5.2 Typ. Max. 10.4 2.4 0.6 1.5 0.69 0.23 6.2 H I J K L M N Dimension Min. 0.89 6.35 5.2 0.6 0.5 3.96 4.57 Typ. Max. 2.03 6.80 5.5 1 0.9 5.18 mm

G L

AUG-19-2004