TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS

Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997

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Designed for Complementary Use with the TIP32 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available
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TO-220 PACKAGE (TOP VIEW)

1 2 3

Pin 2 is in electrical contact with the mounting base.
MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING TIP31 Collector-base voltage (IE = 0) TIP31A TIP31B TIP31C TIP31 Collector-emitter voltage (IB = 0) TIP31A TIP31B TIP31C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 80 100 120 140 40 60 80 100 5 3 5 1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT

This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

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duty cycle ≤ 2%. PRODUCT INFORMATION 2 .3 V IB(on) = 0.2 0. dc ≤ 2% TYP 0.8 V V IB = 0 TIP31A TIP31B TIP31C TIP31 TIP31A TIP31B TIP31C TIP31/31A TIP31B/31C MIN 40 60 80 100 0. 6.1 A tp = 20 µs. TIP31C NPN SILICON POWER TRANSISTORS JULY 1968 . exact values vary slightly with transistor parameters.5 A IC = 0.2 0.1 A RL = 30 Ω † MIN IB(off) = -0.2 0. TIP31B. tp = 300 µs.125 62.TIP31.2 1.2 0.3 0.REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS TIP31 V (BR)CEO IC = 30 mA (see Note 5) VCE = 80 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = 100 V V CE = 120 V V CE = 140 V ICEO IEBO hFE VCE(sat) VBE hfe VCE = 30 V V CE = 60 V VEB = VCE = V CE = 5V 4V 4V VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = 1A 3A 3A 3A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 50 1.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = 1 A V BE(off) = -4.5 A |hfe| NOTES: 5. These parameters must be measured using voltage-sensing contacts.3 1 mA mA mA V TYP MAX UNIT IB = 375 mA VCE = VCE = VCE = 4V 10 V 10 V IC = 0. These parameters must be measured using pulse techniques. TIP31A. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3. separate from the current carrying contacts.5 2 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal.

TIP31A. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 VCE = 4 V TC = 25°C VBE .REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = 4 V TC = 25°C tp = 300 µs.A Figure 3. TIP31B. Figure 2.A IB .Collector-Emitter Saturation Voltage .TIP31.Base-Emitter Voltage . PRODUCT INFORMATION 3 .Collector Current .V 0·9 TCS631AC 0·8 0·7 0·6 0·5 0·01 0·1 1·0 10 IC .mA Figure 1.V 10 TCS631AB hFE .Collector Current .Base Current . duty cycle < 2% TCS631AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) . TIP31C NPN SILICON POWER TRANSISTORS JULY 1968 .DC Current Gain 1·0 100 0·1 IC = 100 mA IC = 300 mA IC = 1 A IC = 3 A 0·01 0·1 1·0 10 100 1000 10 0·001 0·01 0·1 1·0 10 IC .

A 10 tp = 300 µs.Collector-Emitter Voltage .REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS631AA IC . d = 0.TIP31.W TIS631AA 40 30 20 10 0 0 25 50 75 100 125 150 TC .Maximum Power Dissipation .Case Temperature . THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 50 Ptot . d = 0. TIP31B.1 = 10% tp = 1 ms.Collector Current . d = 0.V Figure 4.1 = 10% DC Operation 1·0 0·1 TIP31 TIP31A TIP31B TIP31C 10 100 1000 0·01 1·0 VCE .1 = 10% tp = 10 ms. TIP31A. TIP31C NPN SILICON POWER TRANSISTORS JULY 1968 .°C Figure 5. PRODUCT INFORMATION 4 .

61 1 2 3 1. TIP31B.0 2. and circuit performance characteristics will remain stable when operated in high humidity conditions.07 14.4 10.95 2.55 1. TIP31A.23 see Note B see Note C 6.34 5.96 3. MDXXBE PRODUCT INFORMATION 5 . Typical fixing hole centre stand off height according to package version. The centre pin is in electrical contact with the mounting tab. Mounting tab corner profile according to package version.TIP31. TIP31C NPN SILICON POWER TRANSISTORS JULY 1968 . The compound will withstand soldering temperature with no deformation.1 3. Leads require no additional cleaning or processing when used in soldered assembly.1 12.0 mm.0 15. 18.REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound.54 6.32 1.40 0. 17. B.88 2.70 4. Version 1. TO220 4.64 0.90 14. C.41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A.6 mm.97 0.74 2.71 10.7 2.70 1. Version 2.6 6.5 0.28 4.90 2.20 ø 3.

granted under any patent right.TIP31. customer product design. AUTHORIZED. before placing orders. Power Innovations Limited PRODUCT INFORMATION 6 . PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. either express or implied. software performance. or infringement of patents or services described herein. that the information being relied on is current.REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED. INTENDED. Specific testing of all parameters of each device is not necessarily performed. Nor is any license. Copyright © 1997. or process in which such semiconductor products or services might be or are used. DEVICES OR SYSTEMS. TIP31C NPN SILICON POWER TRANSISTORS JULY 1968 . design right. OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS. copyright. TIP31A. or other intellectual property right of PI covering or relating to any combination. PI accepts no liability for applications assistance. TIP31B. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. machine. except as mandated by government requirements. and advises its customers to verify.

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